技术领域technical field
本发明涉及一种将图案化蓝宝石衬底不良品重制的方法，适用于半导体、LED、3C等领域蓝宝石衬底的加工制造。The invention relates to a method for remanufacturing defective patterned sapphire substrates, which is suitable for processing and manufacturing sapphire substrates in the fields of semiconductors, LEDs, and 3C.
背景技术Background technique
在以照明应用为主的蓝白光LED工艺上，基于性价比的考虑，九成以上的衬底采用蓝宝石材质；蓝宝石抛光平片可直接作为蓝白光LED衬底，也可以如图1所示，经过黄光微影制程以及蚀刻工艺，再清洗，将蓝宝石平片制作成图案化蓝宝石衬底(PSS, Patterned Sapphire Substrate)；LED厂将蓝宝石平片衬底以图案化蓝宝石衬底取代，可以有效提升LED颗粒成品发光效率两成以上，有效提升产品效能与竞争力；因此，蓝白光LED制作上，已有七成的份额转用图案化衬底取代平片，图案化衬底形成市场主流。In the blue-white LED process mainly for lighting applications, more than 90% of the substrates are made of sapphire based on cost-effective considerations; sapphire polished flat wafers can be directly used as blue-white LED substrates, or as shown in Figure 1, after Yellow light lithography process and etching process, and then cleaning, the sapphire flat sheet is made into a patterned sapphire substrate (PSS , Patterned Sapphire Substrate); the LED factory replaces the sapphire flat sheet substrate with a patterned sapphire substrate, which can effectively improve the LED particle size. The luminous efficiency of the finished product is more than 20%, which effectively improves product performance and competitiveness; therefore, in the production of blue and white LEDs, 70% of the share has been converted to patterned substrates instead of flat sheets, and patterned substrates have become the mainstream of the market.
在大量的蓝宝石图案化衬底制作之下，因为平片加工或微影过程或蚀刻过程不良及稳定性因素等，导致了工艺完成时留下无法重工及出货的蓝宝石图案化衬底不良品。由于蓝宝石属于高成本素材，蓝宝石从平片到图案化完成也累积了可观的加工成本。如能将长期累积相当数量的蓝宝石图案化衬底不良品经由重制赋与新价值实为理想措施。Under the production of a large number of sapphire patterned substrates, due to poor flat film processing or lithography process or etching process and stability factors, etc., there are defective sapphire patterned substrates that cannot be reworked and shipped when the process is completed. . Since sapphire is a high-cost material, sapphire has accumulated considerable processing costs from flat sheeting to patterning. It would be an ideal measure to give new value to a considerable number of defective sapphire patterned substrates accumulated over a long period of time through remanufacturing.
例如蓝宝石抛光垫修整器即为一理想的重制选项，作为本发明的实施例之一，中国台湾专利公告第M458275号《蓝宝石抛光垫修整器》其目的在于提供一种蓝宝石抛光垫修整器以取代习用的钻石碟，其系于蓝宝石层表面经由黄光微影及蚀刻工艺形成复数蓝宝石磨粒，无须利用电镀或烧结的方式来结合，可避免于抛光制程中造成晶粒脱落的情形，降低晶圆被晶粒刮伤的问题，提升化学机械研磨(Chemical Mechanical Polishing，CMP)的良率，且蓝宝石磨粒大小一致可增加工作粒数(Number of Working Crytals)，使晶粒磨平的速率迟缓，因此，晶圆磨除率下降的速率也会减慢，可提升修整器的使用寿命与加工良率，也有效改善钻石碟未臻理想的缺失。For example, the sapphire polishing pad dresser is an ideal remake option. As one of the embodiments of the present invention, the Taiwan Patent Publication No. M458275 "Sapphire Polishing Pad Dresser" aims to provide a sapphire polishing pad dresser for Instead of the conventional diamond disc, it forms a plurality of sapphire abrasive grains on the surface of the sapphire layer through yellow light lithography and etching processes. It does not need to be combined by electroplating or sintering, which can avoid the situation of grain falling off during the polishing process and reduce the wafer The problem of being scratched by crystal grains can improve the yield rate of chemical mechanical polishing (CMP), and the uniform size of sapphire abrasive grains can increase the number of working crystals (Number of Working Crytals), slowing down the rate of grain grinding. Therefore, the decline rate of the wafer removal rate will also slow down, which can improve the service life and processing yield of the dresser, and also effectively improve the lack of ideal diamond discs.
但蓝宝石图案化衬底的表面锥体尺寸仅约3μm以下，高度远低于修整器需求的80～200μm，图型分布也与修整器习用图型不相符，因此进行重制是必须的，主要工艺流程仍为微影及蚀刻，但此时衬底已不再具有抛光后的平坦表面，也可能存在造成不良品原因，比如衬底表面弯曲(warp and bow)问题，传统微影工艺将难以完全克服粗糙不规整的表面来产生适当的光刻图形以符合修整器需求。上述修整器为可能的应用例之一，其他任何蓝宝石图案化衬底不良品重制实施例，只要经由微影及蚀刻工艺制作前述传统微影工艺遭遇的困难即会产生，因此，本发明即提出得以改善已知问题之技术。However, the surface cone size of the sapphire patterned substrate is only about 3 μm or less, and the height is much lower than the 80-200 μm required by the trimmer. The process is still lithography and etching, but at this time the substrate no longer has a polished flat surface, and there may also be reasons for defective products, such as the warp and bow of the substrate surface. The traditional lithography process will be difficult Completely overcome rough and irregular surfaces to produce proper photolithography patterns to meet the trimmer needs. The above-mentioned trimmer is one of the possible application examples, and any other embodiment of reproducing defective sapphire patterned substrates, as long as the above-mentioned difficulties encountered in the traditional lithography process will be produced through lithography and etching processes, therefore, the present invention is Suggest techniques that improve known issues.
发明内容Contents of the invention
本发明的目的在于提供一种将图案化蓝宝石衬底不良品重制的方法，使图案化蓝宝石衬底不良品得以重制为其他产品，变废为宝，增加价值。The purpose of the present invention is to provide a method for remanufacturing defective patterned sapphire substrates, so that defective patterned sapphire substrates can be remade into other products, turning waste into treasure and increasing value.
为了达成上述目的，本发明的解决方案是：In order to achieve the above object, the solution of the present invention is:
将图案化蓝宝石衬底不良品重制的方法，其步骤是：A method for reproducing defective patterned sapphire substrates, the steps of which are:
第一步，在蓝宝石上进行多层阻挡层涂覆加工；In the first step, a multi-layer barrier coating process is performed on the sapphire;
第二步，在阻挡层上进行黄光微影制程；The second step is to carry out yellow light lithography process on the barrier layer;
第三步，在阻挡层上进行多层阻挡层的蚀刻；The third step is to etch the multi-layer barrier layer on the barrier layer;
第四步，在蓝宝石上进行蓝宝石的蚀刻；The fourth step is to etch the sapphire on the sapphire;
第五步，采用蓝宝石抛光垫修整器进行修整，处理为成品，蓝宝石抛光垫修整器可以为中国台湾专利公告第M458275号《蓝宝石抛光垫修整器》，或者为其他适用的蓝宝石抛光垫修整器； In the fifth step, the sapphire polishing pad dresser is used for dressing, and the finished product is processed. The sapphire polishing pad dresser can be Taiwan Patent Announcement No. M458275 "Sapphire Polishing Pad Dresser", or other applicable sapphire polishing pad dressers;
第六步，清洗。The sixth step, cleaning.
第一步的多层阻挡层涂覆为三层结构，底层为有机底部抗反射涂层Organic BARC，中间层为含硅底部抗反射涂层Si-BARC，顶层为紫外光i-line 365nm光阻剂或光刻胶 i-line photoresist。The multi-layer barrier coating in the first step is a three-layer structure, the bottom layer is Organic BARC, the middle layer is Si-BARC, and the top layer is UV i-line 365nm photoresist agent or photoresist i-line photoresist.
采用上述方案后，本发明利用多层阻挡层(multi layer resist coat,MLR coat)的采用来辅助图案化衬底片的微影工艺，并搭配适当的蚀刻流程，完成蓝宝石图案化衬底的重制，变废为宝，增加价值。在进行习用的黄光微影制程之前，先进行多层阻挡层的涂覆，此项技术的目的在于衬底表面极不平整的条件之下，涂覆完成后使顶端表面平整，可以顺利进行习用的黄光微影制程，执行传统的光阻涂覆、曝光显影等程序之后，干蚀刻工艺的第一道工序为多层阻挡层的蚀刻,将光罩图形经由光阻完整移转给多层阻挡层；接下来进行蓝宝石层非等向性蚀刻，将光罩图形移转给蓝宝石并形成符合需求的锥形及高度。实用上，除顶层光阻以外,多层阻挡层覆盖无须进行曝光显影，特性上的要求及成本均远低于一般光阻剂。After adopting the above scheme, the present invention utilizes the adoption of a multilayer resist coat (MLR coat) to assist the lithography process of the patterned substrate, and with an appropriate etching process, completes the reproduction of the sapphire patterned substrate , turn waste into wealth, increase value. Before the conventional yellow light lithography process, multi-layer barrier layer coating is carried out. The purpose of this technology is to make the top surface smooth after the coating is completed under the condition of extremely uneven substrate surface, so that the conventional process can be carried out smoothly. In the yellow light lithography process, after performing the traditional photoresist coating, exposure and development procedures, the first process of the dry etching process is the etching of the multi-layer barrier layer, and the photomask pattern is completely transferred to the multi-layer barrier layer through the photoresist; Next, perform anisotropic etching on the sapphire layer, transfer the mask pattern to sapphire and form a tapered shape and height that meet the requirements. In practice, except for the top layer of photoresist, multi-layer barrier layer coverage does not require exposure and development, and the requirements for characteristics and cost are much lower than that of ordinary photoresists.
附图说明Description of drawings
图1是现有技术的工艺流程图；Fig. 1 is the process flow chart of prior art;
图2是本发明的工艺流程图；Fig. 2 is a process flow diagram of the present invention;
图3是本发明的工艺示意图。Fig. 3 is a process schematic diagram of the present invention.
具体实施方式Detailed ways
如图2和图3所示，本发明揭示了一种将图案化蓝宝石衬底不良品重制的方法，其步骤如下。As shown in Fig. 2 and Fig. 3, the present invention discloses a method for remanufacturing defective patterned sapphire substrates, the steps of which are as follows.
第一步，在蓝宝石上进行多层阻挡层涂覆加工；因为现有的蓝宝石衬底表面极不平整，涂覆完成后会使覆盖层顶端表面平整，可以顺利进行习用的黄光微影制程。The first step is to coat the sapphire with a multi-layer barrier layer; because the surface of the existing sapphire substrate is extremely uneven, the top surface of the covering layer will be flat after the coating is completed, and the conventional yellow light lithography process can be carried out smoothly.
多层阻挡层涂覆为三层结构，底层为一较厚层，可填平起伏的结构，为顶层光阻微影制程成效创造了条件，底层材料一般选用非光阻剂的含C、H、O聚合物，如有机底部抗反射涂层Organic BARC，并充当衬底蚀刻时移转图型的屏蔽；中间层较薄，一般选用材质为含硅的聚合物，如含硅底部抗反射涂层Si-BARC，此层目的在于充当硬质屏蔽(hard mask)，能将图型于蚀刻制程时完好转移给较厚的底层材料；顶层则为一般光阻剂，如紫外光i-line 365nm光阻剂或光刻胶 i-line photoresist。The multi-layer barrier layer is coated with a three-layer structure. The bottom layer is a thicker layer, which can fill up the undulating structure and create conditions for the effectiveness of the photoresist lithography process on the top layer. The bottom layer material is generally non-photoresist containing C, H , O polymers, such as organic bottom anti-reflective coating Organic BARC, and act as a shield for transferring patterns during substrate etching; the middle layer is thin, and the material is generally made of silicon-containing polymers, such as silicon-containing bottom anti-reflective coating Layer Si-BARC, the purpose of this layer is to act as a hard mask (hard mask), which can transfer the pattern to the thicker bottom material during the etching process; the top layer is a general photoresist, such as UV i-line 365nm Photoresist or photoresist i-line photoresist.
第二步，在阻挡层上进行黄光微影制程；The second step is to carry out yellow light lithography process on the barrier layer;
黄光微影制程在于应用扫描步进机，将光罩上的图型，经由曝光显影等步骤，将图型移转到顶层的光阻层。The yellow light lithography process uses a scanning stepper to transfer the pattern on the photomask to the top photoresist layer through steps such as exposure and development.
第三步，在阻挡层上进行多层阻挡层的蚀刻；将光罩图形经由光阻完整移转给多层阻挡层。In the third step, the multi-layer barrier layer is etched on the barrier layer; the photomask pattern is completely transferred to the multi-layer barrier layer through the photoresist.
此步骤对于第一步提到的三层结构，经由两阶段的蚀刻，将顶层光阻的图型依序移转给多层阻挡层；首先，第一阶段蚀刻先将图型由光阻层移转给中间层，再以中间层为屏蔽，将图型移转给底层。In this step, for the three-layer structure mentioned in the first step, the pattern of the top photoresist is sequentially transferred to the multi-layer barrier layer through two-stage etching; first, the first stage of etching first transfers the pattern from the photoresist layer Transfer to the middle layer, and then use the middle layer as a shield to transfer the graphics to the bottom layer.
第四步，在蓝宝石上进行蓝宝石的蚀刻；将光罩图形移转给蓝宝石并形成符合需求的锥形及高度。The fourth step is to etch the sapphire on the sapphire; transfer the mask pattern to the sapphire and form the tapered shape and height that meet the requirements.
以多层阻挡层的底层为屏蔽，进行蓝宝石蚀刻，将图型移转到衬底表面。Using the bottom layer of the multi-layer barrier layer as a shield, sapphire etching is performed to transfer the pattern to the surface of the substrate.
第五步，采用蓝宝石抛光垫修整器进行修整，处理为成品；In the fifth step, the sapphire polishing pad dresser is used for dressing, and the finished product is processed;
第六步，清洗。The sixth step, cleaning.
本发明的关键点在于：采用多层阻挡层技术来克服粗糙不规整表面，使得光刻工艺得以顺利施行，但成本增加有限，使图案化蓝宝石衬底报废片重制为其他产品，在工艺上和商业上可行性提升；目前尚未发现有其他可替代技术，如果先行研磨及抛光图案化蓝宝石衬底报废片再行重制，成本增加部分非常可观。The key point of the present invention is: using multi-layer barrier layer technology to overcome the rough and irregular surface, so that the photolithography process can be implemented smoothly, but the cost increase is limited, so that the scrapped patterned sapphire substrate can be remade into other products. And the commercial feasibility is improved; no other alternative technology has been found so far. If the patterned sapphire substrate is first ground and polished and then remanufactured, the cost increase will be very considerable.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410540387.XACN104332534A (en) | 2014-10-14 | 2014-10-14 | Method for remaking defective patterned sapphire substrate |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410540387.XACN104332534A (en) | 2014-10-14 | 2014-10-14 | Method for remaking defective patterned sapphire substrate |
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| CN104332534Atrue CN104332534A (en) | 2015-02-04 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201410540387.XAPendingCN104332534A (en) | 2014-10-14 | 2014-10-14 | Method for remaking defective patterned sapphire substrate |
| Country | Link |
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| CN (1) | CN104332534A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106002632A (en)* | 2016-07-20 | 2016-10-12 | 厦门润晶光电集团有限公司 | Chemical-mechanical grinding and polishing pad dresser |
| CN109166952A (en)* | 2018-09-04 | 2019-01-08 | 孙逊运 | A kind of graphical sapphire substrate and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM458275U (en)* | 2013-03-08 | 2013-08-01 | Tera Xtal Technology Corp | Sapphire polishing pad dresser |
| CN104037270A (en)* | 2013-03-05 | 2014-09-10 | 德晶科技股份有限公司 | Sapphire substrate structure suitable for patterning and forming method of patterned sapphire substrate |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037270A (en)* | 2013-03-05 | 2014-09-10 | 德晶科技股份有限公司 | Sapphire substrate structure suitable for patterning and forming method of patterned sapphire substrate |
| TWM458275U (en)* | 2013-03-08 | 2013-08-01 | Tera Xtal Technology Corp | Sapphire polishing pad dresser |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106002632A (en)* | 2016-07-20 | 2016-10-12 | 厦门润晶光电集团有限公司 | Chemical-mechanical grinding and polishing pad dresser |
| CN109166952A (en)* | 2018-09-04 | 2019-01-08 | 孙逊运 | A kind of graphical sapphire substrate and preparation method thereof |
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