技术领域technical field
本发明涉及一种提高P型氮化镓掺杂浓度的外延方法。The invention relates to an epitaxial method for increasing the doping concentration of P-type gallium nitride.
背景技术Background technique
被称为第三代半导体的GaN及其系列材料在光电子器件和微电子器件领域都有重要的应用价值。GaN材料和器件的研究都取得了重大进展，特别是GaN高亮度蓝、绿光发光二极管的商品化和长寿命蓝光激光器的研制成功，是GaN器件取得突破的重要标志。经过近十几年的发展，GaN基蓝光LED已成功实现商业化，在景观灯、背光源、照明灯领域都得到广泛应用。Known as the third-generation semiconductor, GaN and its series of materials have important application value in the fields of optoelectronic devices and microelectronic devices. Significant progress has been made in the research of GaN materials and devices, especially the commercialization of GaN high-brightness blue and green light-emitting diodes and the successful development of long-life blue lasers, which are important signs of breakthroughs in GaN devices. After nearly ten years of development, GaN-based blue LEDs have been successfully commercialized and widely used in the fields of landscape lights, backlights, and lighting.
由于H原子的钝化作用，P型GaN曾经是制约GaN器件发展的一个关键因素，后来由于激活工艺尤其是快速热退火激活技术的发明，极大地推动了GaN材料和器件的发展。不过，虽然经过适当退火处理后的样品转化成了P型样品，但得到的空穴浓度仍然较低，典型值为2×1017cm-3，比掺杂浓度低2-3个数量级，这样会限制载流子浓度，从而降低LED的光电效率。Due to the passivation effect of H atoms, P-type GaN used to be a key factor restricting the development of GaN devices. Later, the invention of the activation process, especially the rapid thermal annealing activation technology, greatly promoted the development of GaN materials and devices. However, although the sample after proper annealing treatment is transformed into a P-type sample, the resulting hole concentration is still low, with a typical value of 2×1017 cm-3 , which is 2-3 orders of magnitude lower than the doping concentration. It will limit the carrier concentration, thereby reducing the photoelectric efficiency of the LED.
杨志坚等人1.利用红外退火法制备P型GaN。通过实验条件的优化获得的Mg掺杂样品空穴浓度达到6.9×1018cm-3，二次离子质谱分析结果表明Mg掺杂水平为1020cm-3量级。激活率约7％。Hall测试及光荧光测试结果表面700℃至850℃是最佳的退火温度。2.利用快速退火法制备P型GaN。也可获得较好结果。该方法突出优点在于对Mg掺杂GaN的晶体质量影响较小，这可从X射线双晶衍射摇摆曲线的半高宽结果得知。3.采用自由电子激光辐照法制备P型GaN，使所用样品的空穴载流子浓度提高了一个量级。4.采用离子注入法制备P型GaN，该方法得到的P型GaN样品表面的空穴载流子浓度达8.28×1017cm-3。Yang Zhijian et al. 1. Preparation of P-type GaN by infrared annealing method. The hole concentration of the Mg-doped sample obtained by optimizing the experimental conditions reached 6.9×1018 cm-3 , and the results of secondary ion mass spectrometry showed that the Mg doping level was on the order of 1020 cm-3 . The activation rate is about 7%. According to the results of Hall test and photofluorescence test, 700°C to 850°C is the best annealing temperature. 2. Prepare P-type GaN by rapid annealing method. Better results can also be obtained. The outstanding advantage of this method is that it has little effect on the crystal quality of Mg-doped GaN, which can be known from the half-maximum width of the X-ray twin crystal diffraction rocking curve. 3. P-type GaN is prepared by free electron laser irradiation method, which increases the hole carrier concentration of the sample used by an order of magnitude. 4. P-type GaN was prepared by ion implantation, and the hole carrier concentration on the surface of the P-type GaN sample obtained by this method reached 8.28×1017 cm-3 .
冉军学等在N2气氛下，950℃退火处理P型GaN后，空穴浓度达到5×1017cm-3以上，电阻率降到2.5Ω.cm。Ran Junxue et al. After annealing P-type GaN at 950°C under N2 atmosphere, the hole concentration reached above 5×1017 cm-3 and the resistivity dropped to 2.5Ω.cm.
李彤等利用Delta掺杂技术制备p型GaN，生长过程复杂：采用delta掺杂生长500nm左右的p-GaN，p-GaN共包含340个周期，每个周期厚度1-2nm，单周期过程如下：1-2nm的非故意掺杂GaN，保持氨流量不变，同时关闭Ga源，如此保持一段时间(预通氨，pre-purge)再开通Mg源10s。电阻率、载流子浓度与迂移率分别为1.7Ω.cm、3.5×1017cm-3与10cm2/Vs。Li Tong et al. used delta doping technology to prepare p-type GaN. The growth process is complicated: use delta doping to grow p-GaN with a thickness of about 500nm. p-GaN contains a total of 340 cycles, and the thickness of each cycle is 1-2nm. The single-cycle process is as follows : 1-2nm unintentionally doped GaN, keep the ammonia flow constant, and turn off the Ga source at the same time, keep it for a period of time (pre-purge) and then turn on the Mg source for 10s. The resistivity, carrier concentration and detour are 1.7Ω.cm, 3.5×1017 cm-3 and 10cm2 /Vs, respectively.
陈军峰等利用AlGaN/GaN超晶格结构提高GaN材料p型掺杂效果的方案，获得了电阻率为0.31Ω.cm、空穴浓度为4.36×1018cm-3的P型材料。Chen Junfeng et al. used the AlGaN/GaN superlattice structure to improve the p-type doping effect of GaN materials, and obtained a P-type material with a resistivity of 0.31Ω.cm and a hole concentration of 4.36×1018 cm-3 .
刑艳辉等人利用生长停顿掺杂P型GaN，生长过程：100个周期的每生长0.5nm掺杂GaN停顿0.12min。生长之后热退火是在N2气氛下，750℃、30min进行。电阻率、载流子浓度与迂移率分别为3.0Ω.cm、3.29×1017cm-3与6cm2/Vs。Xing Yanhui and others used the growth pause to dope P-type GaN, and the growth process: every growth of 0.5nm doped GaN in 100 cycles paused for 0.12min. Thermal annealing after growth is carried out under N2 atmosphere at 750° C. for 30 min. The resistivity, carrier concentration and detour are 3.0Ω.cm, 3.29×1017 cm-3 and 6cm2 /Vs, respectively.
发明内容Contents of the invention
为了提升载流子的浓度，本发明提供了一种新的P层的外延生长方法，该方法可以改善LED外延生长的P层掺杂效率，提高Mg的掺杂浓度，提升载流子的浓度，增大复合发光效率，提升LED器件的光电转换效率。In order to increase the concentration of carriers, the present invention provides a new method for the epitaxial growth of the P layer, which can improve the doping efficiency of the P layer of LED epitaxial growth, increase the doping concentration of Mg, and increase the concentration of carriers , increase the composite luminous efficiency, and improve the photoelectric conversion efficiency of LED devices.
本发明的技术原理是：生长掺镁的GaN层时，明显增大载气(H2)与氨气的流量比(现有技术通常为3-4，本发明为设定为9.5-10.5)，其他环节可与现有技术相同。The technical principle of the present invention is: when growing the GaN layer doped with magnesium, the flow ratio of the carrier gas (H2 ) to the ammonia gas is obviously increased (the prior art is usually 3-4, and the present invention is set to 9.5-10.5) , other links can be the same as the prior art.
参考现有技术的其他环节，本发明的这种提高P型氮化镓掺杂浓度的外延生长方法，可包括(但不绝对限于)以下步骤：Referring to other aspects of the prior art, the epitaxial growth method for increasing the doping concentration of P-type gallium nitride according to the present invention may include (but not absolutely limited to) the following steps:
(1)在蓝宝石衬底上生长低温GaN层；(1) Growing a low-temperature GaN layer on a sapphire substrate;
(2)生长高温GaN层；(2) Growing a high temperature GaN layer;
(3)生长高温GaN掺杂硅烷n型层；(3) Growth of high-temperature GaN-doped silane n-type layer;
(4)生长掺硅烷的n型AlGaN层；(4) growing a silane-doped n-type AlGaN layer;
(5)生长若干周期的GaN/InGaN量子阱层；(5) GaN/InGaN quantum well layers grown for several periods;
(6)生长掺杂镁的P型AlGaN层；(6) growing a p-type AlGaN layer doped with magnesium;
(7)生长一层掺镁的GaN层，该步骤中载气H2与氨气的流量比为9.5-10.5；(7) grow a layer of magnesium-doped GaN layer, carrier gasH in this step The flow ratio of ammonia and gas is 9.5-10.5;
(8)在氮气氛围下，700-800℃退火20分钟。(8) Anneal at 700-800°C for 20 minutes under nitrogen atmosphere.
以上所称的“高温”、“低温”在本领域是具有明确意义的技术术语。The "high temperature" and "low temperature" mentioned above are technical terms with clear meanings in this field.
本发明的有益效果如下：The beneficial effects of the present invention are as follows:
本发明使用的方法在生长LED的P型时，采用在气体总流量不变的情况下，增大载气(H2)与氨气的流量比，可以减少Mg-H键数量，即Mg的掺杂浓度会上升，增大P层的空穴浓度，同时减少N-H键和C掺杂量，最终提升器件的光电转换效率。与通常在生长完P型氮化镓后进行退火相比，该方法可以更有效的活化Mg掺杂。同时，可以降低P层氮化镓的接触电阻，提高器件的电学性能。When the method used in the present invention grows the P type of LED, the flow ratio of the carrier gas (H2 ) to ammonia gas can be increased under the condition that the total gas flow rate is constant, so as to reduce the number of Mg-H bonds, that is, the amount of Mg The doping concentration will increase, increasing the hole concentration of the P layer, while reducing the amount of NH bonds and C doping, and ultimately improving the photoelectric conversion efficiency of the device. Compared with the usual annealing after the growth of P-type GaN, this method can activate Mg doping more effectively. At the same time, the contact resistance of the p-layer gallium nitride can be reduced, and the electrical performance of the device can be improved.
附图说明Description of drawings
图1为本发明LED的外延整体结构示意图。FIG. 1 is a schematic diagram of the epitaxial overall structure of the LED of the present invention.
具体实施方式Detailed ways
下面结合附图对本发明的具体实施方式作进一步的描述：The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
本发明运用金属有机化合物化学气相沉淀(MOCVD)外延生长技术，采用三甲基镓(TMGa)，三乙基镓(TEGa)，和三甲基铟(TMIn)，三甲基铝(TMAl)和氨气(NH3)硅烷(SiH4)和二茂镁(Cp2Mg)分别提供生长所需要的镓源，铟源，铝源和氮源，其中硅烷和镁源分别用于n层和p层的掺杂。The present invention uses metal organic compound chemical vapor deposition (MOCVD) epitaxial growth technology, adopts trimethylgallium (TMGa), triethylgallium (TEGa), and trimethylindium (TMIn), trimethylaluminum (TMAl) and Ammonia (NH3 ), silane (SiH4 ) and dimagnesocene (Cp2 Mg) provide the gallium source, indium source, aluminum source and nitrogen source required for growth, respectively, and the silane and magnesium sources are used for the n-layer and p-layer respectively. layer doping.
如图1所示，可利用现有的MOCVD技术设备，以蓝宝石作为生长的衬底，在上面生长低温GaN层，然后生长高温GaN层，然后接着生长高温GaN掺杂硅烷n型层，然后生长掺硅烷的n型AlGaN层，然后接着生长几个周期的GaN/InGaN量子阱层，再生长掺杂镁的P型AlGaN层，最后生长一层掺镁的GaN层，而后氮气氛围下退火。As shown in Figure 1, the existing MOCVD technology equipment can be used to use sapphire as the growth substrate, grow a low-temperature GaN layer on it, then grow a high-temperature GaN layer, and then grow a high-temperature GaN-doped silane n-type layer, and then grow A silane-doped n-type AlGaN layer, followed by several cycles of GaN/InGaN quantum well layers, then a magnesium-doped p-type AlGaN layer, and finally a magnesium-doped GaN layer, followed by annealing in a nitrogen atmosphere.
本发明的基本环节与现有技术大体相同，关键就在于其中生长掺镁GaN时载气(H2)与氨气的流量比的调整(其他步骤的具体条件也都可以保留不变)。在生长掺镁GaN时将载气(H2)与氨气的流量比由常规的3-4大幅提升至9.5-10.5，可以减少Mg-H键数量，即Mg的掺杂浓度会上升，增大P层的空穴浓度，同时减少N-H键和C掺杂量，最终提升器件的光电转换效率。The basic aspects of the present invention are generally the same as those of the prior art, the key lies in the adjustment of the flow ratio of carrier gas (H2 ) to ammonia gas when growing Mg-doped GaN (the specific conditions of other steps can also be kept unchanged). When growing magnesium-doped GaN, the flow ratio of carrier gas (H2 ) to ammonia gas is greatly increased from the conventional 3-4 to 9.5-10.5, which can reduce the number of Mg-H bonds, that is, the doping concentration of Mg will increase, and the The hole concentration of the large P layer, while reducing the amount of NH bonds and C doping, ultimately improves the photoelectric conversion efficiency of the device.
实施例一：Embodiment one:
1.将蓝宝石衬底特殊清洗处理后，放入MOCVD设备在1100℃烘烤10分钟。1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.
2.降温到550℃生长一层厚度20nm的低温GaN层，生长压力为400torr。2. Lower the temperature to 550°C to grow a low-temperature GaN layer with a thickness of 20nm, and the growth pressure is 400torr.
3.升温到1020℃生长一层高温厚度1μm的未掺杂GaN层，生长压力为300torr。3. Raise the temperature to 1020° C. to grow a layer of undoped GaN layer with a thickness of 1 μm at high temperature and a growth pressure of 300 torr.
4.温度1030℃生长一层高温掺杂SiH4的n型GaN层，压力200torr。4. A layer of n-type GaN layer doped with SiH4 is grown at a temperature of 1030°C and a pressure of 200torr.
5.在温度1030℃生长一层20nm的n型AlGaN层，压力200torr。5. Grow a 20nm n-type AlGaN layer at a temperature of 1030°C and a pressure of 200torr.
6.在氮气氛围下，在400torr，850℃生长一层12nm GaN或AlGaN和750℃生长一层3nm的InGaN的量子垒阱结构，生长8个周期。6. In a nitrogen atmosphere, grow a layer of 12nm GaN or AlGaN at 850°C and a layer of 3nm InGaN quantum barrier well structure at 750°C at 400torr, and grow for 8 cycles.
7.温度升至950℃，150torr，生长一层p型AlGaN层，厚度20nm。7. The temperature is raised to 950° C., 150 torr, and a p-type AlGaN layer is grown with a thickness of 20 nm.
8.在900℃，200torr下，增大(较前一环节阶跃变化)载气H2与NH3的流量比至10，生长一层掺镁GaN层，厚度200nm(气体总流量不变，即NH3流量相对降低，需要加长生长时间，厚度达到与现有技术一致)。8. At 900°C and 200 torr, increase (step change from the previous step) the flow ratio of the carrier gas H2 to NH3 to 10, and grow a magnesium-doped GaN layer with a thickness of 200nm (the total gas flow remains unchanged, That is, the flow rate ofNH3 is relatively reduced, and the growth time needs to be lengthened, and the thickness is consistent with the prior art).
9.在氮气氛围下，退火20分钟。9. Under nitrogen atmosphere, anneal for 20 minutes.
以上整体外延生长过程结束，即制得LED外延片。After the above overall epitaxial growth process is completed, the LED epitaxial wafer is produced.
经实验，该方法得到的P型GaN样品表面的空穴载流子浓度达3.4×1019cm-3，电阻率为0.21Ω.cm。Experiments show that the hole carrier concentration on the surface of the P-type GaN sample obtained by this method reaches 3.4×1019 cm-3 , and the resistivity is 0.21Ω.cm.
实施例二：Embodiment two:
1.将蓝宝石衬底特殊清洗处理后，放入MOCVD设备在1100℃烘烤10分钟。1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.
2.降温到550℃生长一层厚度20nm的低温GaN层，生长压力为400torr。2. Lower the temperature to 550°C to grow a low-temperature GaN layer with a thickness of 20nm, and the growth pressure is 400torr.
3.升温到1030℃生长一层高温厚度1.5μm的未掺杂GaN层，生长压力为300torr。3. Raise the temperature to 1030° C. to grow a layer of undoped GaN layer with a thickness of 1.5 μm at high temperature and a growth pressure of 300 torr.
4.温度1050℃生长一层高温掺杂SiH4的n型GaN层，压力200torr。4. A layer of n-type GaN layer doped with SiH4 is grown at a temperature of 1050°C and a pressure of 200torr.
5.在温度1050℃生长一层20nm的n型AlGaN层，压力200torr。5. Grow a 20nm n-type AlGaN layer at a temperature of 1050°C and a pressure of 200torr.
6.在氮气氛围下，在400torr，850℃生长一层12nm GaN或AlGaN和750℃生长一层3nm的InGaN的量子垒阱结构，生长8个周期。6. In a nitrogen atmosphere, grow a layer of 12nm GaN or AlGaN at 850°C and a layer of 3nm InGaN quantum barrier well structure at 750°C at 400torr, and grow for 8 cycles.
7.温度升至950℃，150torr，生长一层p型AlGaN层，厚度20nm。7. The temperature is raised to 950° C., 150 torr, and a p-type AlGaN layer is grown with a thickness of 20 nm.
8.在900℃，200torr下，增大(较前一环节阶跃变化)载气H2与NH3的流量比至9.5，生长一层掺镁GaN层，厚度200nm(气体总流量不变，即NH3流量相对降低，需要加长生长时间，厚度达到与现有技术一致)。8. At 900°C and 200 torr, increase (step change from the previous step) the flow ratio of carrier gas H2 to NH3 to 9.5, and grow a magnesium-doped GaN layer with a thickness of 200nm (total gas flow remains unchanged, That is, the flow rate ofNH3 is relatively reduced, and the growth time needs to be lengthened, and the thickness is consistent with the prior art).
9.在氮气氛围下，退火20分钟。9. Under nitrogen atmosphere, anneal for 20 minutes.
以上整体外延生长过程结束，即制得LED外延片。After the above overall epitaxial growth process is completed, the LED epitaxial wafer is produced.
经实验，该方法得到的P型GaN样品表面的空穴载流子浓度达2.1×1019cm-3，电阻率为0.28Ω.cm。Experiments show that the hole carrier concentration on the surface of the P-type GaN sample obtained by this method reaches 2.1×1019 cm-3 , and the resistivity is 0.28Ω.cm.
实施例三：Embodiment three:
1.将蓝宝石衬底特殊清洗处理后，放入MOCVD设备在1100℃烘烤10分钟。1. After the sapphire substrate is specially cleaned, put it into the MOCVD equipment and bake it at 1100°C for 10 minutes.
2.降温到550℃生长一层厚度20nm的低温GaN层，生长压力为400torr。2. Lower the temperature to 550°C to grow a low-temperature GaN layer with a thickness of 20nm, and the growth pressure is 400torr.
3.升温到1030℃生长一层高温厚度1μm的未掺杂GaN层，生长压力为300torr。3. Raise the temperature to 1030° C. to grow a layer of undoped GaN layer with a thickness of 1 μm at high temperature and a growth pressure of 300 torr.
4.温度1050℃生长一层高温掺杂SiH4的n型GaN层，压力200torr。4. A layer of n-type GaN layer doped with SiH4 is grown at a temperature of 1050°C and a pressure of 200torr.
5.在温度1050℃生长一层30nm的n型AlGaN层，压力200torr。5. Grow a 30nm n-type AlGaN layer at a temperature of 1050°C and a pressure of 200torr.
6.在氮气氛围下，在400torr，800℃生长一层12nm GaN或AlGaN和700℃生长一层3nm的InGaN的量子垒阱结构，生长10个周期。6. In a nitrogen atmosphere, grow a layer of 12nm GaN or AlGaN at 800°C and a layer of 3nm InGaN quantum barrier well structure at 700°C at 400torr, and grow for 10 cycles.
7.温度升至950℃，150torr，生长一层p型AlGaN层，厚度30nm。7. The temperature is raised to 950° C., 150 torr, and a p-type AlGaN layer is grown with a thickness of 30 nm.
8.在900℃，200torr下，增大(较前一环节阶跃变化)载气H2与NH3的流量比至10.5，生长一层掺镁GaN层，厚度200nm(气体总流量不变，即NH3流量相对降低，需要加长生长时间，厚度达到与现有技术一致)。8. At 900°C and 200 torr, increase (step change from the previous step) the flow ratio of carrier gas H2 to NH3 to 10.5, and grow a magnesium-doped GaN layer with a thickness of 200nm (total gas flow remains unchanged, That is, the flow rate ofNH3 is relatively reduced, and the growth time needs to be lengthened, and the thickness is consistent with the prior art).
9.在氮气氛围下，退火20分钟。9. Under nitrogen atmosphere, anneal for 20 minutes.
以上整体外延生长过程结束，即制得LED外延片。After the above overall epitaxial growth process is completed, the LED epitaxial wafer is produced.
经实验，该方法得到的P型GaN样品表面的空穴载流子浓度达4.2×1019cm-3，电阻率为0.17Ω.cm。Experiments show that the hole carrier concentration on the surface of the P-type GaN sample obtained by this method reaches 4.2×1019 cm-3 , and the resistivity is 0.17Ω.cm.
需要强调的是，以上实施例中给出了能够达到最佳技术效果的具体参数，但这些温度、厚度、压力等具体参数大部分均是参照现有技术所做的常规选择，不应视为对本发明权利要求保护范围的限制。说明书中阐述了本发明技术改进的原理，本领域技术人员应当能够认识到在基本方案下对各具体参数做适度的调整仍然能够基本实现本发明的目的。It should be emphasized that the specific parameters that can achieve the best technical effect are given in the above examples, but most of these specific parameters such as temperature, thickness, and pressure are conventional choices made with reference to the prior art, and should not be regarded as Restrictions on the protection scope of the claims of the present invention. The technical improvement principle of the present invention is described in the description, and those skilled in the art should be able to realize that the purpose of the present invention can still be basically realized by making appropriate adjustments to each specific parameter under the basic scheme.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410452957.XACN104241464B (en) | 2014-09-05 | 2014-09-05 | A kind of epitaxial growth method for improving p-type gallium nitride doping concentration |
| Application Number | Priority Date | Filing Date | Title |
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| CN201410452957.XACN104241464B (en) | 2014-09-05 | 2014-09-05 | A kind of epitaxial growth method for improving p-type gallium nitride doping concentration |
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| CN104241464Atrue CN104241464A (en) | 2014-12-24 |
| CN104241464B CN104241464B (en) | 2017-12-22 |
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| CN201410452957.XAExpired - Fee RelatedCN104241464B (en) | 2014-09-05 | 2014-09-05 | A kind of epitaxial growth method for improving p-type gallium nitride doping concentration |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047534A (en)* | 2015-06-30 | 2015-11-11 | 聚灿光电科技股份有限公司 | P-type GaN layer preparation method and LED epitaxial structure preparation method |
| CN106328474A (en)* | 2016-10-14 | 2017-01-11 | 北京大学 | Method for introducing impurities into gallium nitride at room temperature |
| CN106784204A (en)* | 2016-12-21 | 2017-05-31 | 安徽三安光电有限公司 | A kind of gallium nitride based light emitting diode structure and preparation method thereof |
| CN109742203A (en)* | 2019-01-14 | 2019-05-10 | 江西兆驰半导体有限公司 | A kind of iii-nitride light emitting devices |
| CN109860044A (en)* | 2019-01-31 | 2019-06-07 | 中国科学院半导体研究所 | A p-type GaN epitaxial wafer with high ohmic contact characteristics and its preparation method |
| CN111540814A (en)* | 2020-05-09 | 2020-08-14 | 湘能华磊光电股份有限公司 | An LED epitaxial growth method for improving quantum efficiency |
| CN112331745A (en)* | 2020-10-27 | 2021-02-05 | 华灿光电(苏州）有限公司 | Preparation method of light emitting diode epitaxial wafer |
| CN114843174A (en)* | 2022-04-29 | 2022-08-02 | 江苏第三代半导体研究院有限公司 | Preparation method of P-type nitride epitaxial structure, epitaxial structure and semiconductor device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729029A (en)* | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
| CN101183697A (en)* | 2007-12-10 | 2008-05-21 | 厦门大学 | A gallium nitride-based light-emitting diode epitaxial wafer structure and its preparation method |
| CN101789473A (en)* | 2010-02-23 | 2010-07-28 | 厦门大学 | GaN-based vertical structure light-emitting diode and preparation method thereof |
| CN102842660A (en)* | 2012-08-17 | 2012-12-26 | 马鞍山圆融光电科技有限公司 | epitaxial wafer structure of gallium nitride-based LED (Light-Emitting Diode) and preparation method thereof |
| CN103887392A (en)* | 2014-03-28 | 2014-06-25 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method for improving luminous efficiency of LED |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729029A (en)* | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
| CN101183697A (en)* | 2007-12-10 | 2008-05-21 | 厦门大学 | A gallium nitride-based light-emitting diode epitaxial wafer structure and its preparation method |
| CN101789473A (en)* | 2010-02-23 | 2010-07-28 | 厦门大学 | GaN-based vertical structure light-emitting diode and preparation method thereof |
| CN102842660A (en)* | 2012-08-17 | 2012-12-26 | 马鞍山圆融光电科技有限公司 | epitaxial wafer structure of gallium nitride-based LED (Light-Emitting Diode) and preparation method thereof |
| CN103887392A (en)* | 2014-03-28 | 2014-06-25 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method for improving luminous efficiency of LED |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047534A (en)* | 2015-06-30 | 2015-11-11 | 聚灿光电科技股份有限公司 | P-type GaN layer preparation method and LED epitaxial structure preparation method |
| CN105047534B (en)* | 2015-06-30 | 2018-03-30 | 聚灿光电科技股份有限公司 | The preparation method of p-type GaN layer and LED epitaxial structure |
| CN106328474A (en)* | 2016-10-14 | 2017-01-11 | 北京大学 | Method for introducing impurities into gallium nitride at room temperature |
| CN106784204A (en)* | 2016-12-21 | 2017-05-31 | 安徽三安光电有限公司 | A kind of gallium nitride based light emitting diode structure and preparation method thereof |
| CN106784204B (en)* | 2016-12-21 | 2019-01-18 | 安徽三安光电有限公司 | A kind of gallium nitride based light emitting diode structure and preparation method thereof |
| CN109742203A (en)* | 2019-01-14 | 2019-05-10 | 江西兆驰半导体有限公司 | A kind of iii-nitride light emitting devices |
| CN109860044A (en)* | 2019-01-31 | 2019-06-07 | 中国科学院半导体研究所 | A p-type GaN epitaxial wafer with high ohmic contact characteristics and its preparation method |
| CN111540814A (en)* | 2020-05-09 | 2020-08-14 | 湘能华磊光电股份有限公司 | An LED epitaxial growth method for improving quantum efficiency |
| CN111540814B (en)* | 2020-05-09 | 2023-03-21 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving quantum efficiency |
| CN112331745A (en)* | 2020-10-27 | 2021-02-05 | 华灿光电(苏州）有限公司 | Preparation method of light emitting diode epitaxial wafer |
| CN114843174A (en)* | 2022-04-29 | 2022-08-02 | 江苏第三代半导体研究院有限公司 | Preparation method of P-type nitride epitaxial structure, epitaxial structure and semiconductor device |
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|---|---|
| CN104241464B (en) | 2017-12-22 |
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