技术领域technical field
本发明涉及微波、毫米波技术。The present invention relates to microwave and millimeter wave technologies.
背景技术Background technique
随着现代微波、毫米波技术的快速发展，微波、毫米波系统迅速向小型化、轻型化、高可靠性、多功能、低成本方向发展，传统的传输线如矩形波导和微带线已经不能完全满足这些要求。基片集成波导(SIW)作为一种新兴的传输线，它既具有矩形波导高品质因数、低损耗、以及相对较高的功率容量，又具有微带线体积小、易于集成化的优点，因而SIW传输线可以在微波、毫米波设备中得到广泛应用。With the rapid development of modern microwave and millimeter wave technology, microwave and millimeter wave systems are rapidly developing in the direction of miniaturization, light weight, high reliability, multi-function, and low cost. Traditional transmission lines such as rectangular waveguides and microstrip lines are no longer fully meet these requirements. As an emerging transmission line, substrate integrated waveguide (SIW) not only has the high quality factor, low loss, and relatively high power capacity of rectangular waveguide, but also has the advantages of small size and easy integration of microstrip line, so SIW Transmission lines can be widely used in microwave and millimeter wave devices.
目前，SIW传输线已经开始用于滤波器、环行器、隔离器、天线等的设计，为了方便与其它电路的集成，通常要采用微带线对SIW进行转接，这就存在了一个匹配的问题。常用的匹配方法有线性渐变微带线、单节或多节1/4波长的微带线以及切比雪夫渐变微带线匹配，这些方法的缺点在于获得低回波损耗时，微带渐变线会普遍偏长，与实现器件的小型化相矛盾。在SIW环行器的设计中而为了展宽带宽和实现与外部电路的连接，一般会采用结外微带线匹配，目前常用的是线性渐变微带线匹配，为了减小由于阻抗突变而引起的反射，渐变的微带线一般都较长。At present, SIW transmission lines have begun to be used in the design of filters, circulators, isolators, antennas, etc. In order to facilitate integration with other circuits, microstrip lines are usually used to transfer SIW, and there is a matching problem. . The commonly used matching methods are linear gradient microstrip line, single or multi-section 1/4 wavelength microstrip line and Chebyshev gradient microstrip line matching. The disadvantage of these methods is that when obtaining low return loss, the microstrip gradient line It will generally be too long, which is in contradiction with realizing the miniaturization of the device. In the design of the SIW circulator, in order to widen the bandwidth and realize the connection with the external circuit, the microstrip line matching outside the junction is generally used. At present, the linear gradient microstrip line matching is commonly used. In order to reduce the reflection caused by the sudden change of impedance , the gradient microstrip lines are generally longer.
发明内容Contents of the invention
本发明所要解决的技术问题是，提供一种具有低的回波损耗和短的微带线长度特点的SIW环行器。The technical problem to be solved by the present invention is to provide an SIW circulator with the characteristics of low return loss and short microstrip line length.
本发明解决所述技术问题采用的技术方案是，SIW环行器，包括基片集成波导和微带线，其特征在于，基片集成波导和微带线的连接处为圆弧，基片集成波导宽度a、圆形铁氧体半径Rf和微带线与SIW连接圆弧的倒角半径Rc同时满足下述关系：The technical solution adopted by the present invention to solve the technical problem is that the SIW circulator includes a substrate-integrated waveguide and a microstrip line, and is characterized in that the connection between the substrate-integrated waveguide and the microstrip line is an arc, and the substrate-integrated waveguide The width a, the radius Rf of the circular ferrite and the chamfer radius Rc of the arc connecting the microstrip line and the SIW satisfy the following relationship at the same time:
0.162≤Rc/a≤0.2160.162≤Rc /a≤0.216
0.769≤Rc/Rf≤1.0260.769≤Rc /Rf ≤1.026
进一步的说，a＝3.70mm，Rf＝0.78mm，Rc＝0.70mm。Further, a=3.70mm,Rf =0.78mm,Rc =0.70mm.
本发明的有益效果是，采用了新的SIW转微带线的匹配技术，实现了阻抗的良好匹配，并实现了器件的小型化和宽频化。The beneficial effect of the invention is that a new SIW-to-microstrip line matching technology is adopted to realize good impedance matching, and realize miniaturization and broadband of devices.
附图说明Description of drawings
图1是SIW仿真模型图。Figure 1 is a diagram of the SIW simulation model.
图2是SIW不同宽度a对应的S(1,1)曲线图。Fig. 2 is a graph of S(1,1) corresponding to different width a of SIW.
图3是有微带线匹配的SIW环行器结构图。Figure 3 is a structural diagram of an SIW circulator with microstrip line matching.
图4是环行器S参数曲线图。Fig. 4 is a graph of S parameters of a circulator.
图5是3个端口的输出阻抗曲线图。Figure 5 is a graph of the output impedance of the three ports.
图6是环行器不同倒角半径Rc对应的S(1,1)曲线图。Fig. 6 is a graph of S(1,1) corresponding to different chamfering radii Rc of the circulator.
具体实施方式detailed description
以一个工作于ka波段的环行器设计和制备为例，本实施方式满足以下指标要求：中心频率在37.5GHz，回波损耗在-20dB时的带宽不低于5GHz，插损小于0.5dB,三个端口的输出阻抗为50Ω。Taking the design and preparation of a circulator working in the ka band as an example, this embodiment meets the following index requirements: the center frequency is 37.5 GHz, the bandwidth is not lower than 5 GHz when the return loss is -20 dB, and the insertion loss is less than 0.5 dB. The output impedance of each port is 50Ω.
设计及制备步骤为：The design and preparation steps are:
步骤一、环行器设计材料的选择，主要包括介质基板和铁氧体材料的选择。Step 1. The selection of design materials for the circulator mainly includes the selection of dielectric substrates and ferrite materials.
步骤二、确定SIW传输线的参数，在介质基板上打上周期性排列的金属化通孔形成SIW传输线，SIW的结构由通孔直径d、孔间距s(孔间距以圆心距离计)、基片厚度h和SIW的宽度a和来确定,它们满足关系式：s/d<2，d/a<0.2，以及下面公式Step 2. Determine the parameters of the SIW transmission line, and form the SIW transmission line by placing periodically arranged metallized through-holes on the dielectric substrate. The structure of the SIW consists of the through-hole diameter d, the hole spacing s (the hole spacing is measured by the distance from the center of the circle), and the thickness of the substrate. h and the width a of SIW are determined, they satisfy the relationship: s/d<2, d/a<0.2, and the following formula
其中aeff为填充同种介质的矩形波导的宽度，aeff初值可取0.8λg(λg为工作波长)。Where aeff is the width of a rectangular waveguide filled with the same medium, and the initial value of aeff can be 0.8λg (λg is the working wavelength).
步骤三、利用上面优化后的传输线进行环行器的设计，并用微带线进行阻抗匹配和转接。铁氧体的半径可根据下面公式求出Step 3: Use the optimized transmission line above to design a circulator, and use a microstrip line for impedance matching and switching. The radius of ferrite can be calculated according to the following formula
其中λ为该频率下真空中的波长，εf为铁氧体的相对介电常数，μe为铁氧体有效磁导率。Where λ is the wavelength in vacuum at this frequency, εf is the relative permittivity of ferrite, and μe is the effective permeability of ferrite.
步骤四、对环行器中的主要参数进行优化，包括倒角半径Rc、铁氧体半径Rf、SIW的宽度a，并得到Rc的取值范围。Step 4, optimize the main parameters in the circulator, including the chamfer radius Rc , the ferrite radius Rf , and the width a of the SIW, and obtain the value range of Rc .
步骤五、依据以上各步骤确定的参数值制作带有圆弧微带线的SIW环行器。Step five, fabricate the SIW circulator with the arc microstrip line according to the parameter values determined in the above steps.
作为一个实施例，更具体的步骤为：As an example, the more specific steps are:
步骤一、选择一种双面覆铜的相对介电常数εr为3，基片厚度h为0.508mm的PCB板作为介质基板。铁氧体的饱和磁化强度4πMs＝5200Gauss，有效线宽ΔH＝100Oe，相对介电常数εf为13。Step 1: Select a double-sided copper-clad PCB with a relative permittivity εr of 3 and a substrate thickness h of 0.508 mm as the dielectric substrate. The saturation magnetization of ferrite is 4πMs=5200Gauss, the effective line width ΔH=100Oe, and the relative permittivity εf is 13.
步骤二、在介质基板上打上周期性排列的金属化通孔形成SIW传输线，通孔的直径d为0.4mm，孔间距s为0.75mm，SIW的宽度a根据公式计算为3.7mm。图1为SIW模型结构图，图2为对宽度a优化时的回波损耗曲线图。Step 2: Placing periodically arranged metallized through holes on the dielectric substrate to form the SIW transmission line. The diameter d of the through holes is 0.4 mm, the hole spacing s is 0.75 mm, and the width a of the SIW is calculated according to the formula to be 3.7 mm. Figure 1 is a structural diagram of the SIW model, and Figure 2 is a curve diagram of the return loss when optimizing the width a.
步骤三、通过上面的仿真结果，选着一个较优的a值所对应的SIW传输线进行环行器的设计，环行器的三个臂由三段SIW传输线组成，并用1/4波长微带线进行阻抗匹配，在微带线与SIW连接处采用圆弧倒角。铁氧体的半径Rf根据公式得到为0.76mm。此时环行器的结构如图3所示。Step 3. Based on the above simulation results, select a SIW transmission line corresponding to a better value of a to design the circulator. The three arms of the circulator are composed of three sections of SIW transmission lines, and use 1/4 wavelength microstrip line for the design of the circulator. For impedance matching, arc chamfering is used at the connection between the microstrip line and the SIW. The radius Rf of the ferrite is obtained as 0.76mm according to the formula. The structure of the circulator at this time is shown in FIG. 3 .
步骤四、对环行器中心频率和工作带宽影响最大的结构参数有a、Rf、Rc，当a、Rf通过公式初步计算出来后，Rc与a、Rf应满足下面的关系式：Step 4. The structural parameters that have the greatest impact on the center frequency and operating bandwidth of the circulator are a, Rf , and Rc . After a, Rf are preliminarily calculated by the formula, Rc and a, Rf should satisfy the following relationship:
0.162≤Rc/a≤0.216(3)0.162≤Rc /a≤0.216(3)
0.769≤Rc/Rf≤1.026(4)0.769≤Rc /Rf ≤1.026(4)
以此确定倒角半径Rc。From this, the chamfer radius Rc is determined.
更进一步的，经过测试证明a＝3.70mm，Rf＝0.78mm，Rc＝0.70mm，孔间距s＝0.75mm,通孔直径d＝0.4mm,50欧微带线宽度w_50Ω＝1.31mm,基片宽度w_sub＝6mm,微带线长度l＝1.39mm时，具有极佳的性能。如图4所示，环行器的中心频率在37.5GHz，-20dB所对应的回波损耗和隔离的带宽都达到了6.5GH，超过了指标要求的5GHz带宽,且插损都小于0.5dB。图5给出了三个端口的输出阻抗，均在50Ω左右。图6给出了不同Rc对回波损耗的影响，当Rc＝0.7mm时，曲线出现明显的双峰，工作带宽具有最大值，在此基础上，Rc增大或是减小都使双峰现象减弱，逐渐向单峰发展，工作带宽相应减小。Rc等于0.6mm和0.8mm，分别为满足设计指标的一个极小值和极大值，即设计中Rc的取值范围应为0.6mm～0.8mm。Furthermore, it has been tested and proved that a=3.70mm, Rf =0.78mm, Rc =0.70mm, hole spacing s=0.75mm, through hole diameter d=0.4mm, 50 ohm microstrip line widthw_50Ω =1.31mm , When the substrate width w_sub = 6mm and the microstrip line length l = 1.39mm, it has excellent performance. As shown in Figure 4, the center frequency of the circulator is 37.5GHz, and the return loss and isolation bandwidth corresponding to -20dB both reach 6.5GHz, exceeding the 5GHz bandwidth required by the index, and the insertion loss is less than 0.5dB. Figure 5 shows the output impedance of the three ports, which are all around 50Ω. Figure 6 shows the influence of different Rc on the return loss. When Rc =0.7mm, the curve has obvious double peaks, and the working bandwidth has a maximum value. On this basis, it is all right to increase or decrease Rc The double-peak phenomenon is weakened, and gradually develops to a single peak, and the working bandwidth is correspondingly reduced. Rc is equal to 0.6mm and 0.8mm, which are a minimum value and a maximum value that meet the design index respectively, that is, the value range of Rc in the design should be 0.6mm ~ 0.8mm.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410261607.5ACN104078733B (en) | 2014-06-12 | 2014-06-12 | SIW circulator |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410261607.5ACN104078733B (en) | 2014-06-12 | 2014-06-12 | SIW circulator |
| Publication Number | Publication Date |
|---|---|
| CN104078733A CN104078733A (en) | 2014-10-01 |
| CN104078733Btrue CN104078733B (en) | 2017-04-12 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410261607.5AExpired - Fee RelatedCN104078733B (en) | 2014-06-12 | 2014-06-12 | SIW circulator |
| Country | Link |
|---|---|
| CN (1) | CN104078733B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505567A (en)* | 2014-12-15 | 2015-04-08 | 电子科技大学 | Substrate integrated waveguide circulator |
| CN105870558A (en)* | 2016-03-30 | 2016-08-17 | 电子科技大学 | W-wave-band circulator |
| CN105932387A (en)* | 2016-05-17 | 2016-09-07 | 电子科技大学 | Double-junction circulator based on SIW |
| US10147991B1 (en)* | 2017-06-02 | 2018-12-04 | Huawei Technologies Canada Co., Ltd. | Non-reciprocal mode converting substrate integrated waveguide |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011449A (en)* | 1997-02-18 | 2000-01-04 | The Whitaker Corporation | Surface mount technology contact for ferrite isolator/circulator applications |
| CN102377004A (en)* | 2011-09-30 | 2012-03-14 | 电子科技大学 | Miniaturized substrate integrated waveguide circulator |
| EP2500978A1 (en)* | 2011-03-17 | 2012-09-19 | Sivers Ima AB | Waveguide transition |
| CN102856617A (en)* | 2012-09-20 | 2013-01-02 | 电子科技大学 | Broadband substrate integrated waveguide circulator |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011449A (en)* | 1997-02-18 | 2000-01-04 | The Whitaker Corporation | Surface mount technology contact for ferrite isolator/circulator applications |
| EP2500978A1 (en)* | 2011-03-17 | 2012-09-19 | Sivers Ima AB | Waveguide transition |
| CN102377004A (en)* | 2011-09-30 | 2012-03-14 | 电子科技大学 | Miniaturized substrate integrated waveguide circulator |
| CN102856617A (en)* | 2012-09-20 | 2013-01-02 | 电子科技大学 | Broadband substrate integrated waveguide circulator |
| Publication number | Publication date |
|---|---|
| CN104078733A (en) | 2014-10-01 |
| Publication | Publication Date | Title |
|---|---|---|
| CN108879044B (en) | An ultra-wideband bandpass filter structure with wide stopband and high selectivity | |
| CN108172958B (en) | Periodic slow wave transmission line unit based on coplanar waveguide | |
| CN110474137A (en) | A kind of three road function filter-divider of multilayer based on SIW | |
| CN106654497B (en) | Miniaturized broadband slow-wave half-mode substrate-integrated waveguide coupler and its design method | |
| CN106099274A (en) | A kind of slot-coupled compensates 1/8th mould substrate integral wave guide filters of fractal defect sturcture | |
| CN104078733B (en) | SIW circulator | |
| CN103811833B (en) | Be applied to the height isolation line of rabbet joint duplexer of ultra wide band channel and narrowband channels | |
| CN110212273A (en) | Two-frequency duplex device based on substrate integration wave-guide | |
| CN105990630A (en) | High-selectivity Balun band pass filter based on substrate integrated waveguide | |
| CN108493534A (en) | A kind of four mould chip integrated waveguide broad-band filters | |
| CN204289663U (en) | A kind of millimeter wave filter adopting frequency selectivity coupling to carry out Fundamental wave suppression | |
| CN106450608A (en) | Open-circuit branch loaded semi-module substrate integrated waveguide band-pass filter | |
| CN111129684A (en) | A mmWave 3dB directional coupler based on a novel artificial magnetic conductor | |
| CN202259640U (en) | Reactance regulating T-shaped port SIW (Substrate Integrated Waveguide) circulator | |
| CN201820868U (en) | Ultra-Wideband Filter Based on Ladder Impedance Resonator Loading | |
| CN110190371B (en) | Waveguide power divider | |
| CN108736120B (en) | A half-mode substrate integrated waveguide attenuator based on surface mount resistance | |
| CN102377005B (en) | Reactance-regulated plane integrated waveguide circulator with T-shaped port | |
| CN104241803B (en) | Matching method of SIW circulator center junction and 50 ohm microstrip line | |
| Li et al. | Multimode resonator based on composite right‐/left‐handed transmission line for UWB bandpass filter application | |
| CN103094651A (en) | Substrate integrated waveguide circulator | |
| CN107086339B (en) | A kind of ultra-wide band filter based on novel defected microstrip structure | |
| CN104505567A (en) | Substrate integrated waveguide circulator | |
| Huang et al. | Circular cross‐coupling dielectric waveguide filter based on 90‐degree sectoral resonators | |
| CN110400999B (en) | A Linear E-face Probe Microstrip Waveguide Transition Device |
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee | Granted publication date:20170412 |