The top emitting AMOLED devices and method for making of high apertureTechnical field
The present invention relates to ORGANIC ELECTROLUMINESCENCE DISPLAYS technical field, sent out in particular to a kind of top with high aperturePenetrate AMOLED devices and method for making.
Background technology
Active matrix type organic light emitting diode (Active Matrix Organic Light Emitting Diode,Abbreviation：AMOLED) device is following preparation large scale, a kind of New flat panel display part of fine definition organic display device.AMOLED devices go to control each pixel using independent thin film transistor (TFT) (TFT), and each pixel all can be continuous and independentDriving is luminous.Typical AMOLED devices have TFT and driving TFT of a switch in a pixel, and switching TFT is used forI.e. pixel voltage gate drive voltage is addressed, driving TFT controls the driving current of AMOLED devices, while device is also neededA storage capacitance is wanted to maintain stable pixel voltage.
The light that aperture opening ratio refers to after the wiring part for removing each pixel, crystal pipe portion passes through the area of part and eachRatio between the overall area of pixel.The light sent due to the AMOLED devices (such as Fig. 1) of bottom emitting type can only partly fromProjected at the opening set in driving panel, most of light is blocked by TFT zone, and aperture opening ratio is relatively low, only 30%-50%.AndAnd with the raising of image resolution ratio, aperture opening ratio can also be reduced, or even be down to less than 10%.Aperture opening ratio is low, can cause to flow through deviceThe current density of part is big, accelerates device aging, finally shortens the pixel life-span.
The content of the invention
The present invention is to solve the above problems to use top emission type device to make emergent light completely not by TFT zone there is provided one kindBlock, pixel capacitors are covered on whole substrate substrate, whole panel is luminous except barrier layer region, and remaining height that can light is openedThe top emitting AMOLED devices and method for making of mouth rate.
The top emitting AMOLED devices of the high aperture of the present invention, including it is glass substrate, cushion, active layer, first exhaustedEdge layer, bottom electrode, grid, the second insulating barrier, Top electrode, source electrode, drain electrode, passivation layer, pixel capacitors, organic luminous layer, negative electrode,Drain contact hole and storage capacitance；Glass substrate is arranged on bottom, and cushion is arranged on the top of glass substrate, cushionFang Yici, which is constituted, active layer and grid, grid covering active layer, also has the first insulating barrier between active layer and grid, first is exhaustedBottom electrode is additionally provided with above edge layer, the second insulating barrier is covered on grid, and the second insulating layer exposing goes out the portion of both sides active layerPoint, contact hole is formed, source electrode and drain electrode are connected on active layer by contact hole, and Top electrode is additionally provided with the second insulating barrier,Then passivation layer is covered on source electrode and drain electrode, and passivation layer exposes drain contact hole, and pixel capacitors are covered over the passivation layer, hadMachine luminescent layer is covered in pixel capacitors, and negative electrode is covered on organic luminous layer, and bottom electrode and Top electrode constitute storage capacitance.
The pixel capacitors include Ag metal levels and electroconductive ITO film is constituted, and electroconductive ITO film is on Ag metal levels.
The negative electrode includes constituting according to Al metal levels, Ag metal levels and AlQ films, and Al metal levels, Ag metal levels and AlQ are thinFilm is constituted and is arranged in order.
A kind of top emitting AMOLED device method for making of high aperture, comprises the following steps：
The first step, cushion is formed on the glass substrate；
Second step and then constitute active layer, grid and the first insulating barrier, shape while forming grid successively on the buffer layerInto the bottom electrode of storage capacitance；
3rd step, it is covered in including on the whole substrate substrate of grid, exposing the active layer segment in both sides with the second insulating barrier,Form contact hole；
4th step and then generation source electrode and drain electrode, are then connected on active layer by contact hole, form source electrode and drain electrodeWhile formed storage capacitance Top electrode；
5th step, one covering source electrode of formation and the passivation layer of drain electrode on whole substrate, passivation layer have exposure oneDivide the drain contact hole of drain electrode；
6th step, covering passivation layer formation pixel capacitors, pixel capacitors are arranged to anode；
7th step, organic luminous layer is deposited in pixel capacitors；
8th step, negative electrode are deposited on organic luminous layer.
Pixel capacitors in the 6th step in 6th step are covered first to be deposited on whole passivation layer substrate, passivation layerThen Ag metal levels deposit electroconductive ITO film thereon, form pixel capacitors.
Al metal levels, Ag metal levels and AlQ films are sequentially depositing on organic luminous layer in 8th step and constitutes negative electrode.
The top emitting AMOLED devices of high aperture of the invention make emergent light complete using top emission type device in summaryDo not blocked entirely by TFT zone, pixel capacitors are covered on whole substrate substrate, whole panel lights except barrier layer region, remainingIt can light, aperture opening ratio may be up to more than 85%, device is maintained same brightness at lower current densities, improve deviceLife-span, and ensure good light output coupling performance using microcavity effect and refractive index matching layers.
Brief description of the drawings
Fig. 1 is the cross-sectional view of traditional bottom emitting AMOLED devices；
Fig. 2 is the cross-sectional view of the top emitting AMOLED devices of the high aperture of the present invention.
Wherein, 1, glass substrate；2nd, cushion；3rd, active layer；4th, the first insulating barrier；5th, bottom electrode；6th, grid；7th, secondInsulating barrier；8th, Top electrode；9th, source electrode；10th, drain；11st, passivation layer；12nd, pixel capacitors；13rd, organic luminous layer；14th, negative electrode；15th, drain contact hole；16th, storage capacitance.
Embodiment
The invention will be further elaborated with specific embodiment below in conjunction with the accompanying drawings.
Top emitting AMOLED devices of high aperture of the invention as described in Figure 2, including glass substrate 1, cushion 2, haveActive layer 3, the first insulating barrier 4, bottom electrode 5, grid 6, the second insulating barrier 7, Top electrode 8, source electrode 9, drain electrode 10, passivation layer 11, asPlain electrode 12, organic luminous layer 13, negative electrode 14, drain contact hole 15 and storage capacitance 16；Glass substrate 1 is arranged on bottom,Cushion 2 is arranged on the top of glass substrate 1, and the top of cushion 2 is constituted successively active layer 3 and grid 6, grid 6 covered withActive layer 3, also has the first insulating barrier 4 between active layer 3 and grid 6, the top of the first insulating barrier 4 is additionally provided with bottom electrode 5, and second is exhaustedEdge layer 7 is covered on grid 6, and the second insulating barrier 7 exposes the part of both sides active layer 3, forms contact hole, source electrode 9 and drain electrode10 are connected on active layer 3 by contact hole, are additionally provided with Top electrode 8 on the second insulating barrier 7, then passivation layer 11 is covered in sourceOn pole 9 and drain electrode 10, passivation layer 11 exposes drain contact hole 15, and pixel capacitors 12 are covered on passivation layer 11, organic light emissionLayer 13 is covered in pixel capacitors 12, and negative electrode 14 is covered on organic luminous layer 13, and bottom electrode 5 and Top electrode 8 constitute storage electricityHold 16.The pixel capacitors 12 include Ag metal levels and electroconductive ITO film is constituted, and electroconductive ITO film is on Ag metal levels.The negative electrode14 are included according to Al metal levels, Ag metal levels and AlQ3Film is constituted, Al metal levels, Ag metal levels and AlQ3Film is constituted and arranged successivelyRow.
A kind of top emitting AMOLED device method for making of high aperture, comprises the following steps：
The first step, the formation cushion 2 on glass substrate 1；
Second step and then constitute active layer 3, grid 5 and first insulating barrier 4 successively on the buffer layer 2, form grid 6The bottom electrode 5 of storage capacitance 16 is formed simultaneously；
3rd step, it is covered in including on the whole substrate substrate of grid 6, exposing both sides active layer 3 with the second insulating barrier 7Point, form contact hole；
4th step and then generation source electrode 9 and drain electrode 10, are then connected on active layer 3 by contact hole, form source electrode 9The Top electrode 8 of storage capacitance 16 is formed while with drain electrode 10；
5th step, one covering source electrode 9 of formation and the passivation layer 11 of drain electrode 10 on whole substrate, passivation layer 11 has sudden and violentThe drain contact hole 15 of dew part drain electrode 10；
6th step, the covering formation pixel capacitors 12 of passivation layer 11, pixel capacitors 12 are arranged to anode；
7th step, organic luminous layer 13 is deposited in pixel capacitors 12；
8th step, negative electrode 14 are deposited on organic luminous layer 13.
The pixel capacitors 12 in the 6th step in 6th step are covered on the whole substrate of passivation layer 11, passivation layer 11First then deposition Ag metal levels deposit electroconductive ITO film thereon, form pixel capacitors 12.
Al metal levels, Ag metal levels and AlQ are sequentially depositing on organic luminous layer 13 in 8th step3Film constitutes cloudyPole 14.
Pixel capacitors 12 are made up of total reflection Electrode Ag metal level and the electrically conducting transparent ito film being deposited on, and can pass through lightProjected after Ag metal layer reflections from top device.
Negative electrode 14 is by Al metal levels, Ag metal levels and AlQ3Film is constituted, Al/Ag composite cathodes and refractive index matching layersAlQ3Film improves light transmission, reduces absorption loss water, and constitutes the micro-cavity structure of device with reflecting electrode Ag metal levels, carriesHigh device light output efficiency and stability of photoluminescence.
Pixel capacitors in patent applied for are part covering passivation layer, can so cause aperture opening ratio to decline, this literary graceTwo methods of all coverings and emission structure at top are taken to improve aperture opening ratio
One of ordinary skill in the art will be appreciated that embodiment described here is to aid in reader and understands this hairBright principle, it should be understood that protection scope of the present invention is not limited to such especially statement and embodiment.This areaThose of ordinary skill can make according to these technical inspirations disclosed by the invention various does not depart from the other each of essence of the inventionPlant specific deformation and combine, these deformations and combination are still within the scope of the present invention.