技术领域technical field
本发明涉及光刻技术领域，具体涉及一种基于双光束聚合引发以及抑制的高分辨成像光刻方法。The invention relates to the technical field of photolithography, in particular to a high-resolution imaging photolithography method based on double-beam polymerization initiation and suppression.
背景技术Background technique
器件的小型化和集成化已成为器件发展的大势所趋，这就对现代微电子光刻工艺提出了越来越高的要求。然而衍射极限的存在，使得传统的光学成像光刻加工技术在加工分辨力上已经遇到了瓶颈。如何进一步提高加工分辨力，使其达到乃至超越衍射极限一直是全世界范围内微电子行业致力解决研究的热点。The miniaturization and integration of devices has become the general trend of device development, which puts forward higher and higher requirements for modern microelectronics lithography technology. However, due to the existence of the diffraction limit, the traditional optical imaging lithography processing technology has encountered a bottleneck in processing resolution. How to further improve the processing resolution so that it reaches or exceeds the diffraction limit has always been a research hotspot in the microelectronics industry around the world.
近年来，一种双光子直写的加工技术被提出，通过近红外超短脉冲激光激发材料的非线性吸收，使得加工的分辨力最高可以达到几十纳米，极大地超越了衍射极限。此外，2009年，美国的两个研究小组几乎同时提出了一种双光束聚合引发以及抑制的激光直写技术，该技术基本原理就是利用其中的一种激光源来激发光刻胶的聚合，而另一束激光来抑制光刻胶的聚合，它们的焦点在焦平面上交叠，通过位相掩模的方法来设计聚合抑制激光光束的焦斑形状，使得交叠曝光区域光刻胶不产生聚合，从而实现超越衍射极限的加工分辨力。In recent years, a two-photon direct writing processing technology has been proposed. The nonlinear absorption of the material is excited by the near-infrared ultrashort pulse laser, so that the processing resolution can reach tens of nanometers, which greatly exceeds the diffraction limit. In addition, in 2009, two research groups in the United States almost simultaneously proposed a dual-beam polymerization initiation and suppression laser direct writing technology. The basic principle of this technology is to use one of the laser sources to stimulate the polymerization of photoresist, and Another laser beam is used to suppress the polymerization of the photoresist, and their focal points overlap on the focal plane, and the focal spot shape of the polymerization suppression laser beam is designed by means of a phase mask, so that the photoresist in the overlapping exposure area does not polymerize , so as to achieve processing resolution beyond the diffraction limit.
然而以上两种激光直写加工的方法虽然可以使得光刻线宽超越衍射极限，但是直写光刻从原理上就存在加工时间长，效率低的缺点，使得其在大规模制作生产中很受限制。目前主流的微电子光刻工艺基本上都是采用成像光刻的方式。如何将同样激光波长下超越衍射极限的技术与传统的成像光刻相结合，从而得到一种超越衍射极限的快速、高效的加工方法是目前包括工业界和学术界都致力研究的一个研究方向。However, although the above two laser direct writing processing methods can make the lithographic linewidth exceed the diffraction limit, the principle of direct writing lithography has the disadvantages of long processing time and low efficiency, which makes it very popular in mass production. limit. At present, the mainstream microelectronic lithography process basically adopts the imaging lithography method. How to combine the technology beyond the diffraction limit under the same laser wavelength with traditional imaging lithography to obtain a fast and efficient processing method beyond the diffraction limit is a research direction that both industry and academia are currently working on.
本发明涉及一种采用两束可以分别引发和抑制光刻胶聚合的激光光束，分别照射到两个图形相同或相似的掩模版上，并采用成像物镜，使得不同激光照射的掩模图形在光刻胶上交叠成像，从而实现超越衍射极限的高效率，低成本的纳米加工技术。The present invention relates to a kind of laser beam that adopts two beams that can respectively induce and inhibit the polymerization of photoresist to irradiate two identical or similar reticles respectively, and adopts an imaging objective lens so that the mask patterns irradiated by different lasers can be seen in the photoresist. Overlap imaging on the resist, so as to realize high-efficiency and low-cost nanofabrication technology beyond the diffraction limit.
发明内容Contents of the invention
本发明要解决的问题是：针对现有双光束聚合引发以及抑制的高分辨直写光刻技术中存在的加工速度较慢，加工效率不高的缺点，提出一种利用双掩模版双光束交叠成像的方法，得到超越衍射极限线宽的同时实现快速高效加工的光刻加工方法。The problem to be solved by the present invention is: aiming at the disadvantages of slow processing speed and low processing efficiency in the existing high-resolution direct writing lithography technology induced and suppressed by double-beam polymerization, a method of using double-mask double-beam alternating The superimposed imaging method is used to obtain a lithographic processing method that exceeds the diffraction limit line width and realizes fast and efficient processing.
本发明解决其技术问题所采用的技术方案是：The technical solution adopted by the present invention to solve its technical problems is:
一种基于双光束聚合引发以及抑制的高分辨成像光刻方法，其特征在于包括以下步骤：A high-resolution imaging lithography method based on double-beam polymerization initiation and suppression, characterized in that it comprises the following steps:
步骤(1)、选择或配置一种合适的光刻胶，光刻胶中需含有聚合引发剂和聚合抑制剂等，且聚合引发剂和聚合抑制剂起作用的激发激光波长不同；Step (1), selecting or configuring a suitable photoresist, the photoresist needs to contain a polymerization initiator and a polymerization inhibitor, etc., and the excitation laser wavelengths of the polymerization initiator and the polymerization inhibitor are different;
步骤(2)、选择合适的聚合引发激光光源，其对应波长可使光刻胶中的聚合引发剂起作用，从而使得光刻胶聚合；Step (2), selecting a suitable polymerization-initiating laser light source whose corresponding wavelength can make the polymerization initiator in the photoresist work, thereby making the photoresist polymerized;
步骤(3)、选择合适的聚合抑制激光光源，其对应波长可使光刻胶中的聚合抑制剂起作用，从而抑制光刻胶的聚合；Step (3), selecting a suitable polymerization-inhibiting laser light source, whose corresponding wavelength can make the polymerization inhibitor in the photoresist work, thereby inhibiting the polymerization of the photoresist;
步骤(4)、用两个准直透镜分别对聚合引发激光器和聚合抑制激光器的出光光束进行准直；Step (4), using two collimating lenses to collimate the light beams of the polymerization initiation laser and the polymerization suppression laser respectively;
步骤(5)、制作两个金属掩模版，其掩模图形形状和尺寸相同或相似；Step (5), making two metal reticles, the shape and size of the mask patterns are the same or similar;
步骤(6)、聚合引发激光光路和聚合抑制激光光路通过二向色镜进行合束，掩模版1和掩模版2的图形通过透镜成像在同一个成像平面内，且所成的像在空间上部分交叠；Step (6), the polymerization-initiating laser light path and the polymerization-inhibiting laser light path are combined through a dichroic mirror, and the patterns of the reticle 1 and the reticle 2 are imaged in the same imaging plane through the lens, and the formed image is spatially partially overlap;
步骤(7)、将含有聚合引发剂，聚合抑制剂的光刻胶样品放置在成像平面上进行曝光，曝光完成后，对样品进行显影，得到高分辨的成像光刻图形。Step (7), placing a photoresist sample containing a polymerization initiator and a polymerization inhibitor on the imaging plane for exposure, and after the exposure is completed, developing the sample to obtain a high-resolution imaging photolithography pattern.
所述步骤(1)中的光刻胶包含聚合单体，如三乙二醇二甲基丙烯酸；The photoresist in the step (1) comprises polymerized monomers, such as triethylene glycol dimethacrylic acid;
所述步骤(1)中的光刻胶包含聚合引发剂，如樟脑醌和乙基-4(二甲氨基)苯甲酸酯，对应感光波长为蓝光；The photoresist in the step (1) comprises a polymerization initiator, such as camphorquinone and ethyl-4 (dimethylamino) benzoate, and the corresponding photosensitive wavelength is blue light;
所述步骤(1)中的光刻胶包含聚合抑制剂，如二硫化四乙基秋兰姆，感光波长为紫外波长。The photoresist in the step (1) contains a polymerization inhibitor, such as tetraethylthiuram disulfide, and the photosensitive wavelength is ultraviolet wavelength.
所述步骤(2)中聚合引发激光光源为出射蓝光的二极管泵浦固体激光器。The polymerization-initiating laser light source in the step (2) is a diode-pumped solid-state laser that emits blue light.
所述步骤(3)中的聚合抑制激光光源为出射紫外光的氩离子激光器。The polymerization-inhibiting laser light source in the step (3) is an argon ion laser that emits ultraviolet light.
所述步骤(5)中的两个金属掩模版的图形为需要加工的图形，如周期光栅等。The patterns of the two metal reticles in the step (5) are patterns that need to be processed, such as periodic gratings and the like.
所述步骤(6)中的两个掩模版通过物镜所成的像产生部分交叠，交叠区域的大小可通过移动掩模版来控制。The images formed by the two reticles in the step (6) through the objective lens partially overlap, and the size of the overlapping area can be controlled by moving the reticle.
所述步骤(7)中的曝光光源为两激光光源同时曝光。The exposure light sources in the step (7) are two laser light sources for simultaneous exposure.
本发明与传统的基于双光束聚合引发以及抑制的直写加工技术相比所具有的优点：本发明采用双光束对具有相同或相似的掩模版图形进行一次交叠成像曝光光刻的方式，实现高效的超越衍射极限分辨力的加工图形。本发明加工速度快，加工效率高，同时实现超越衍射极限的加工分辨力，在微纳结构加工，如高效率光子晶体结构加工，超材料加工等领域，具有很大的意义以及潜在的应用前景。Compared with the traditional direct writing processing technology based on double-beam polymerization initiation and suppression, the present invention has the advantages: the present invention uses double-beams to perform one overlapping imaging exposure photolithography on the same or similar reticle pattern, to realize Efficiently process graphics beyond the diffraction-limited resolution. The invention has fast processing speed, high processing efficiency, and realizes processing resolution beyond the diffraction limit at the same time, and has great significance and potential application prospects in the fields of micro-nano structure processing, such as high-efficiency photonic crystal structure processing, metamaterial processing, etc. .
附图说明Description of drawings
图1是基于双光束聚合引发以及抑制的高分辨成像光刻方法的示意图；Figure 1 is a schematic diagram of a high-resolution imaging lithography method based on dual-beam polymerization initiation and suppression;
图2是掩模版M1和掩模版M2的掩模图形为L形的示意图；FIG. 2 is a schematic diagram of L-shaped mask patterns of the reticle M1 and the reticle M2;
图3是掩模版M1和掩模版M2的交叠成像示意图；其中：A为掩模版M1图形的成像区域；B为掩模版M2图形的成像区域；3 is a schematic diagram of overlapping imaging of the reticle M1 and the reticle M2; wherein: A is the imaging area of the reticle M1 pattern; B is the imaging area of the reticle M2 pattern;
图4是掩模版M1和掩模版M2的掩模图形为L形的实际被曝光图形；FIG. 4 is an actual exposed pattern in which the mask patterns of the reticle M1 and the reticle M2 are L-shaped;
图5是掩模版M1和掩模版M2的掩模图形为圆形的示意图；FIG. 5 is a schematic diagram in which the mask patterns of the reticle M1 and the reticle M2 are circular;
图6是掩模版M1和掩模版M2的交叠成像示意图；其中：C为掩模版M1图形的成像区域；D为掩模版M2图形的成像区域；6 is a schematic diagram of overlapping imaging of the reticle M1 and the reticle M2; wherein: C is the imaging area of the reticle M1 pattern; D is the imaging area of the reticle M2 pattern;
图7是掩模版M1和掩模版M2的掩模图形为圆形的实际被曝光图形。FIG. 7 is an actual pattern to be exposed in which the mask patterns of the reticle M1 and the reticle M2 are circular.
具体实施方式Detailed ways
下面结合附图及具体实施方式详细介绍本发明。但以下的实施例仅限于解释本发明，本发明的保护范围应包括权利要求的全部内容，而且通过以下实施例，本领域的技术人员即可以实现本发明权利要求的全部内容。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. But the following examples are limited to explain the present invention, and the protection scope of the present invention should include the whole content of claim, and through following embodiment, those skilled in the art can realize the whole content of claim of the present invention.
实施例1：Example 1:
如图1所示，将聚合引发激光器、扩束器L1及掩模版M1同轴放置；同时将聚合抑制激光器、扩束器L2及掩模版M2同轴放置；两条光路通过二向色镜DM(Dichroic Mirrors，又称双色镜)进行合束；掩模版M1和掩模版M2的图形通过成像透镜进行成像。As shown in Figure 1, the polymerization initiation laser, beam expander L1 and reticle M1 are coaxially placed; at the same time, the polymerization suppression laser, beam expander L2 and reticle M2 are coaxially placed; the two optical paths pass through the dichroic mirror DM (Dichroic Mirrors, also known as dichromatic mirrors) for beam combining; the patterns of the mask M1 and mask M2 are imaged through the imaging lens.
取掩模版M1和掩模版M2的掩模图形为L形，且尺寸相同，如图2所示。控制光路及掩模版位置，使得两个掩模版经透镜L3后所成的像在同一成像平面内，并且有一定的交叠，如图3所示。图中A为掩模版M1在聚合抑制激光器入射情况下经透镜所成的像，B为掩模版M2在聚合引发激光器入射情况下经透镜所成的像。The mask patterns of the reticle M1 and the reticle M2 are L-shaped and have the same size, as shown in FIG. 2 . Control the optical path and the position of the reticle so that the images formed by the two reticles after passing through the lens L3 are in the same imaging plane and overlap to a certain extent, as shown in FIG. 3 . In the figure, A is the image formed by the reticle M1 through the lens when the polymerization-inhibiting laser is incident, and B is the image formed by the reticle M2 through the lens when the polymerization-inducing laser is incident.
将含有聚合引发剂和聚合抑制剂的光刻胶旋涂在硅基底上，并置于掩模版M1和掩模版M2所在的成像平面上进行曝光，通过控制聚合引发激光和聚合抑制激光的强度，使得掩模版M1和掩模版M2的成像交叠区域的光刻胶不产生聚合，因而只有非交叠曝光区域，即图3中的B区域的光刻胶产生聚合。(因而只有非交叠曝光区域的光刻胶产生聚合。)因此得到的实际曝光线宽为掩模版M2的成像线宽减去其与掩模版M1成像交叠区域所得到的线宽，如图4所示。采用该方法，通过改变任一掩模版的成像位置，并增大两个掩模版的成像交叠区域，原理上可以实现任意小线宽的图形曝光，从而实现超越衍射极限的光刻图形加工。The photoresist containing the polymerization initiator and the polymerization inhibitor is spin-coated on the silicon substrate, and placed on the imaging plane where the reticle M1 and the reticle M2 are located for exposure, by controlling the intensity of the polymerization initiation laser and the polymerization inhibition laser, The photoresist in the imaging overlapping area of the reticle M1 and the reticle M2 is not polymerized, so only the photoresist in the non-overlapping exposure area, that is, the area B in FIG. 3 is polymerized. (Therefore, only the photoresist in the non-overlapping exposure area is polymerized.) Therefore, the actual exposure line width obtained is the imaging line width of the reticle M2 minus the line width obtained by the imaging overlapping area of the reticle M1, as shown in the figure 4. Using this method, by changing the imaging position of any reticle and increasing the imaging overlapping area of the two reticles, in principle, pattern exposure with any small line width can be realized, thereby realizing lithographic pattern processing beyond the diffraction limit.
实施例2：Example 2:
如图1所示，将聚合引发激光器、扩束器L1及掩模版M1同轴放置；同时将聚合抑制激光器、扩束器L2及掩模版M2同轴放置；两条光路通过二向色镜DM(Dichroic Mirrors，又称双色镜)进行合束；掩模版M1和掩模版M2的图形通过成像透镜进行成像。As shown in Figure 1, the polymerization initiation laser, beam expander L1 and reticle M1 are coaxially placed; at the same time, the polymerization suppression laser, beam expander L2 and reticle M2 are coaxially placed; the two optical paths pass through the dichroic mirror DM (Dichroic Mirrors, also known as dichromatic mirrors) for beam combining; the patterns of the mask M1 and mask M2 are imaged through the imaging lens.
取掩模版M1和掩模版M2的掩模图形为圆形，且尺寸相同，如图5所示。控制光路及掩模版位置，使得两个掩模版经透镜L3后所成的像在同一成像平面内，并且有一定的交叠，如图6所示。图中C为掩模版M1在聚合抑制激光器入射情况下经透镜所成的像，D为掩模版M2在聚合引发激光器入射情况下经透镜所成的像。The mask patterns of the reticle M1 and the reticle M2 are circular and have the same size, as shown in FIG. 5 . Control the optical path and the position of the reticle so that the images formed by the two reticles after passing through the lens L3 are in the same imaging plane and overlap to a certain extent, as shown in FIG. 6 . In the figure, C is the image formed by the reticle M1 through the lens under the incident condition of the polymerization-inhibiting laser, and D is the image formed through the lens of the reticle M2 under the incident condition of the polymerization-induced laser.
将含有聚合引发剂和聚合抑制剂的光刻胶旋涂在硅基底上，并置于掩模版M1和掩模版M2所在的成像平面上进行曝光，通过控制聚合引发激光和聚合抑制激光的强度，使得掩模版M1和掩模版M2的成像交叠区域的光刻胶不产生聚合，因而只有非交叠曝光区域，即图3中的B区域的光刻胶产生聚合。(因而只有非交叠曝光区域的光刻胶产生聚合。)因此得到的实际曝光区域为掩模版M2的成像图形减去其与掩模版M1成像交叠区域所得到的区域，如图7所示。采用该方法，通过改变任一掩模版的成像位置，从而增大或减小两个掩模版的成像交叠区域，可以实现不同尺寸的“月”型结构的加工。并且通过增加两个掩模版的成像交叠区域，原理上可以实现超越衍射极限的“月”型结构加工。The photoresist containing the polymerization initiator and the polymerization inhibitor is spin-coated on the silicon substrate, and placed on the imaging plane where the reticle M1 and the reticle M2 are located for exposure, by controlling the intensity of the polymerization initiation laser and the polymerization inhibition laser, The photoresist in the imaging overlapping area of the reticle M1 and the reticle M2 is not polymerized, so only the photoresist in the non-overlapping exposure area, that is, the area B in FIG. 3 is polymerized. (Therefore, only the photoresist in the non-overlapping exposure area is polymerized.) Therefore, the actual exposure area obtained is the area obtained by subtracting the imaging pattern of the reticle M2 and the imaging overlap area of the reticle M1, as shown in Figure 7 . Using this method, by changing the imaging position of any reticle, thereby increasing or decreasing the imaging overlapping area of the two reticles, the processing of "moon" structures of different sizes can be realized. And by increasing the imaging overlapping area of the two reticles, in principle, the "moon" structure processing beyond the diffraction limit can be realized.
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| CN201410192957.0ACN103984211B (en) | 2014-05-08 | 2014-05-08 | High-resolution imaging photoetching method based on dual-beam polymerization initiation and inhibition |
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| CN201410192957.0ACN103984211B (en) | 2014-05-08 | 2014-05-08 | High-resolution imaging photoetching method based on dual-beam polymerization initiation and inhibition |
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