CN103894362A - Method for cleaning coating film reworked sheet - Google Patents
Method for cleaning coating film reworked sheetDownload PDFInfo
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- CN103894362A CN103894362ACN201410011499.6ACN201410011499ACN103894362ACN 103894362 ACN103894362 ACN 103894362ACN 201410011499 ACN201410011499 ACN 201410011499ACN 103894362 ACN103894362 ACN 103894362A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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Abstract
Translated fromChineseDescription
Translated fromChinese技术领域technical field
本发明涉及一种一种镀膜片的清洗方法，具体涉及一种镀膜返工片的清洗方法。The invention relates to a cleaning method of a coated film, in particular to a cleaning method of a coated reworked film.
背景技术Background technique
目前，太阳能电池是直接实现光电转换的装置，为了有效的利用光能，通常在其表面沉积SiNx（氮化硅）作为减反射膜。常规晶体硅太阳能电池生产过程中采用PECVD（等离子增强化学气相沉积）沉积SiNx减反膜，由于镀膜设备的限制和制程控制问题，均存在一定比例的镀膜返工片（厚度、折射率异常和外观不良等），镀膜返工片比例约为1%～5%。At present, solar cells are devices that directly realize photoelectric conversion. In order to effectively utilize light energy, SiNx (silicon nitride) is usually deposited on its surface as an anti-reflection film. In the production process of conventional crystalline silicon solar cells, PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to deposit SiNx anti-reflection coatings. Due to the limitations of coating equipment and process control problems, there are a certain proportion of coating rework pieces (abnormal thickness, refractive index and poor appearance). etc.), the proportion of coating rework is about 1% to 5%.
对于镀膜返工片的处理，一般采用的工艺步骤为：（1）将返工片浸泡在HF溶液中，去除硅片表面沉积的SiNx膜层；（2）将硅片放入去离子水中，鼓泡、溢流清洗，清洁硅片表面；（3）重新制绒；（4）经由扩散、PSG、PECVD和丝网印刷工序重新制备得到电池片。相较于原片制备的电池片，采用此种方法清洗后的返工片后制备的电池片花片比例高，性能较差，将会影响产线良率。For the treatment of coated reworked wafers, the general process steps are: (1) soak the reworked wafers in HF solution to remove the SiNx film deposited on the surface of the silicon wafer; (2) put the silicon wafer into deionized water, bubble , overflow cleaning to clean the surface of the silicon wafer; (3) re-texturing; (4) re-prepare the battery sheet through diffusion, PSG, PECVD and screen printing processes. Compared with the cells prepared from the original sheets, the cells prepared after cleaning the reworked sheets by this method have a high proportion of flower chips and poor performance, which will affect the yield of the production line.
究其原因，单纯采用HF溶液去除SiNx薄膜后，硅片表面仍会残留一定的杂质离子及颗粒，形成复合中心，影响电池性能；此外，返工片经过重新制绒形成的绒面孔洞变大，且不均匀，很容易导致花片。The reason is that after simply using HF solution to remove the SiNx film, certain impurity ions and particles will still remain on the surface of the silicon wafer, forming a recombination center and affecting the performance of the battery; And uneven, it is easy to cause flakes.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种镀膜返工片的清洗方法，生产流程简单，可去除SiNx薄膜和硅片表面残留的颗粒，优化返工片制备电池的外观及性能，提高了生产效率和质量效率。The technical problem to be solved by the present invention is to provide a cleaning method for coated reworked sheets, which has a simple production process, can remove SiNx films and residual particles on the surface of silicon wafers, optimize the appearance and performance of batteries prepared from reworked sheets, and improve production efficiency and quality efficiency.
本发明解决技术问题所采用的技术方案是：一种镀膜返工片的清洗方法，其特征在于，包括如下步骤：The technical solution adopted by the present invention to solve the technical problem is: a method for cleaning a coated rework sheet, which is characterized in that it comprises the following steps:
(1)将镀膜返工片放入10wt%～20wt%的HF溶液中，浸泡900～1800s，去除硅片表面沉积的氮化硅膜层；(1) Put the coated rework sheet into 10wt%-20wt% HF solution, soak for 900-1800s, and remove the silicon nitride film layer deposited on the surface of the silicon wafer;
(2)将硅片放入常温的去离子水中，鼓泡清洗200～300s；(2) Put the silicon wafer into deionized water at room temperature, and wash it by bubbling for 200-300s;
(3)将硅片放入H2O2和NH4OH的混合溶液，控制温度在65～85℃，反应时间15～200s，去除硅片表面附着的离子和颗粒，并改善绒面形貌；(3) Put the silicon wafer into the mixed solution of H2 O2 and NH4 OH, control the temperature at 65-85°C, and the reaction time is 15-200s to remove the ions and particles attached to the surface of the silicon wafer and improve the appearance of the suede surface ;
(4)将硅片放入常温的去离子水中，溢流清洗200～300s；(4) Put the silicon wafer into deionized water at room temperature, and overflow wash for 200-300s;
(5)将硅片放入常温的5wt%的HF溶液中，常温反应210s，去除氧化层，使硅片表面呈疏水性；(5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide layer, and make the surface of the silicon chip hydrophobic;
(6)将硅片放入常温的去离子水槽Ⅰ中，溢流清洗200～300s；(6) Put the silicon wafer into the deionized water tank I at room temperature, and wash with overflow for 200-300s;
(7)将硅片放入常温的去离子水槽Ⅱ中，再次溢流清洗200～300s；(7) Put the silicon wafer into the deionized water tank II at room temperature, and overflow and clean again for 200-300s;
(8)取出硅片，采用甩干机甩干，甩干时间为300～400s。(8) Take out the silicon wafer, and dry it with a drying machine, and the drying time is 300-400s.
作为一种优先，步骤（3）中所述的H2O2和NH4OH的混合溶液中，含有13wt%～25wt%H2O2、5wt%～15wt%NH4OH、0.1wt%～5wt%表面活性剂和65 wt%～75wt%去离子水。As a preference, the mixed solution of H2 O2 and NH4 OH described in step (3) contains 13wt%-25wt% H2 O2 , 5wt%-15wt% NH4 OH, 0.1wt%- 5wt% surfactant and 65wt%~75wt% deionized water.
本发明采用适当比例的H2O2和NH4OH的混合溶液可以氧化腐蚀硅片，由于其反应性质为各向异性反应，可适当增加表面粗糙度，使硅片获得较好的绒面形貌。化学反应式如下：The present invention adopts the mixed solution of H2 O2 and NH4 OH in an appropriate proportion to oxidize and corrode the silicon chip. Since its reaction property is anisotropic reaction, the surface roughness can be appropriately increased, so that the silicon chip can obtain a better suede shape. appearance. The chemical reaction formula is as follows:
在H2O2和NH4OH的混合溶液中加入少量表面活性剂有助于降低溶液表面张力，提高反应的均匀性。因此，在常规返工片清洗方法的基础上引入H2O2和NH4OH溶液清洗技术，形成一种改良的镀膜返工片清洗方法，来解决镀膜返工片重新制备电池片的性能及外观问题。采用本发明处理的硅片，无需再重新制绒，还简化了生产流程。Adding a small amount of surfactant in the mixed solution of H2 O2 and NH4 OH helps to reduce the surface tension of the solution and improve the uniformity of the reaction. Therefore, H2 O2 and NH4 OH solution cleaning technology is introduced on the basis of the conventional reworked sheet cleaning method to form an improved coating reworked sheet cleaning method to solve the performance and appearance problems of the coated reworked sheet re-prepared cells. The silicon wafer processed by the invention does not need to be re-textured, and the production process is simplified.
本发明的有益效果是:采用本发明可去除SiNx薄膜和硅片表面残留的颗粒，优化返工片制备电池的外观及性能，提高了产量效率和质量效率。解决了返工片花片和电池性能差的问题，硅片无需重新制绒，简化了生产流程。The beneficial effects of the present invention are: adopting the present invention can remove SiNx thin films and residual particles on the surface of silicon wafers, optimize the appearance and performance of batteries prepared from reworked wafers, and improve yield efficiency and quality efficiency. The problem of reworked chips and poor battery performance is solved, and the silicon wafer does not need to be re-textured, which simplifies the production process.
具体实施方式Detailed ways
实施例1：一种镀膜返工片的清洗方法，包括如下步骤：Embodiment 1: a kind of cleaning method of coating rework sheet, comprises the following steps:
(1)将镀膜返工片放入15wt%的HF溶液中，浸泡1200s，去除硅片表面沉积的氮化硅膜层；(1) Put the coating rework sheet into 15wt% HF solution, soak for 1200s, and remove the silicon nitride film deposited on the surface of the silicon wafer;
(2)将硅片放入常温的去离子水中，鼓泡清洗200s；(2) Put the silicon wafer into deionized water at normal temperature, and wash it by bubbling for 200s;
(3)将硅片放入H2O2和NH4OH的混合溶液，其含有14wt%H2O2、14wt%NH4OH、1wt%表面活性剂和71wt%去离子水，控制温度在75℃，反应时间100s，去除硅片表面附着的离子和颗粒，并改善绒面形貌；(3) Put the silicon chip into a mixed solution of H2 O2 and NH4 OH, which contains 14wt% H2 O2 , 14wt% NH4 OH, 1wt% surfactant and 71wt% deionized water, and the temperature is controlled at 75°C, reaction time 100s, remove ions and particles attached to the surface of the silicon wafer, and improve the texture of the texture;
(4)将硅片放入常温的去离子水中，溢流清洗200s；(4) Put the silicon wafer into deionized water at room temperature, and overflow wash it for 200s;
(5)将硅片放入常温的5wt%的HF溶液中，常温反应210s，去除氧化层，使硅片表面呈疏水性；(5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide layer, and make the surface of the silicon chip hydrophobic;
(6)将硅片放入常温的去离子水槽Ⅰ中，溢流清洗200s；(6) Put the silicon wafer into the deionized water tank I at room temperature, and wash it with overflow for 200s;
(7)将硅片放入常温的去离子水槽Ⅱ中，再次溢流清洗200s；(7) Put the silicon wafer into the deionized water tank II at room temperature, and overflow and clean it again for 200s;
(8)取出硅片，采用甩干机甩干，甩干时间为300s。(8) Take out the silicon wafer and dry it with a drying machine for 300s.
实施例2：另一种镀膜返工片的清洗方法，包括如下步骤：Embodiment 2: the cleaning method of another kind of coating rework sheet, comprises the following steps:
(1)将镀膜返工片放入10wt%的HF溶液中，浸泡900s，去除硅片表面沉积的氮化硅膜层；(1) Put the coating rework sheet into 10wt% HF solution, soak for 900s, and remove the silicon nitride film layer deposited on the surface of the silicon wafer;
(2)将硅片放入常温的去离子水中，鼓泡清洗250s；(2) Put the silicon wafer into deionized water at normal temperature, and wash it by bubbling for 250s;
(3)将硅片放入H2O2和NH4OH的混合溶液，其含有13wt%H2O2、7wt%NH4OH、5wt%表面活性剂和75wt%去离子水，控制温度在85℃，反应时间50s，去除硅片表面附着的离子和颗粒，并改善绒面形貌；(3) Put the silicon chip into a mixed solution of H2 O2 and NH4 OH, which contains 13wt% H2 O2 , 7wt% NH4 OH, 5wt% surfactant and 75wt% deionized water, and control the temperature at 85°C, reaction time 50s, remove ions and particles attached to the surface of the silicon wafer, and improve the texture of the texture;
(4)将硅片放入常温的去离子水中，溢流清洗250s；(4) Put the silicon wafer into deionized water at normal temperature, and overflow wash it for 250s;
(5)将硅片放入常温的5wt%的HF溶液中，常温反应210s，去除氧化层，使硅片表面呈疏水性；(5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide layer, and make the surface of the silicon chip hydrophobic;
(6)将硅片放入常温的去离子水槽Ⅰ中，溢流清洗250s；(6) Put the silicon wafer into the deionized water tank I at room temperature, and wash it with overflow for 250s;
(7)将硅片放入常温的去离子水槽Ⅱ中，再次溢流清洗300s；(7) Put the silicon wafer into the deionized water tank II at room temperature, and overflow and clean it again for 300s;
(8)取出硅片，采用甩干机甩干，甩干时间为400s。(8) Take out the silicon wafer, and dry it with a drying machine, and the drying time is 400s.
实施例3：又一种镀膜返工片的清洗方法，包括如下步骤：Embodiment 3: another kind of cleaning method of coating rework sheet, comprises the following steps:
(1)将镀膜返工片放入20wt%的HF溶液中，浸泡1800s，去除硅片表面沉积的氮化硅膜层；(1) Put the coating rework sheet into 20wt% HF solution, soak for 1800s, and remove the silicon nitride film layer deposited on the surface of the silicon wafer;
(2)将硅片放入常温的去离子水中，鼓泡清洗300s；(2) Put the silicon wafer into deionized water at normal temperature, and wash it by bubbling for 300s;
(3)将硅片放入H2O2和NH4OH的混合溶液，其含有20wt%H2O2、12wt%NH4OH、3wt%表面活性剂和65wt%去离子水，控制温度在65℃，反应时间200s，去除硅片表面附着的离子和颗粒，并改善绒面形貌；(3) Put the silicon chip into a mixed solution of H2 O2 and NH4 OH, which contains 20wt% H2 O2 , 12wt% NH4 OH, 3wt% surfactant and 65wt% deionized water, and the temperature is controlled at 65°C, reaction time 200s, remove ions and particles attached to the surface of the silicon wafer, and improve the texture of the texture;
(4)将硅片放入常温的去离子水中，溢流清洗200s；(4) Put the silicon wafer into deionized water at room temperature, and overflow wash it for 200s;
(5)将硅片放入常温的5wt%的HF溶液中，常温反应210s，去除氧化层，使硅片表面呈疏水性；(5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide layer, and make the surface of the silicon chip hydrophobic;
(6)将硅片放入常温的去离子水槽Ⅰ中，溢流清洗300s；(6) Put the silicon wafer into the deionized water tank I at room temperature, and wash with overflow for 300s;
(7)将硅片放入常温的去离子水槽Ⅱ中，再次溢流清洗250s；(7) Put the silicon wafer into the deionized water tank II at room temperature, and overflow and clean it again for 250s;
(8)取出硅片，采用甩干机甩干，甩干时间为350s。(8) Take out the silicon wafer and dry it with a drying machine for 350s.
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| CN106847991B (en)* | 2016-12-28 | 2018-05-11 | 东方环晟光伏（江苏）有限公司 | The minimizing technology of blue-black point after a kind of photovoltaic silicon wafer diffusion |
| CN108655089A (en)* | 2018-03-27 | 2018-10-16 | 上海申和热磁电子有限公司 | The cleaning minimizing technology of 12 inches of monocrystalline silicon tray surface aluminium nitride films of semiconductor |
| CN109513677A (en)* | 2018-10-09 | 2019-03-26 | 东莞市希尔金属材料有限公司 | Silk-screen sapphire strip cleaning method |
| CN109513677B (en)* | 2018-10-09 | 2020-06-19 | 东莞市希尔金属材料有限公司 | Screen printing sapphire stripping cleaning method |
| CN109713079A (en)* | 2018-12-12 | 2019-05-03 | 苏州润阳光伏科技有限公司 | A kind of monocrystalline PERC plated film is done over again the cleaning method of piece |
| CN110993485A (en)* | 2019-11-27 | 2020-04-10 | 江苏富乐德半导体科技有限公司 | Surface passivation method of silicon nitride ceramic copper-clad substrate |
| CN112563372A (en)* | 2020-12-11 | 2021-03-26 | 山东力诺太阳能电力股份有限公司 | Surface passivation process for crystalline silicon solar cell |
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| CN115921406A (en)* | 2022-11-14 | 2023-04-07 | 天津中环领先材料技术有限公司 | Silicon wafer cleaning process |
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