Summary of the invention
The object of the invention is, in order to overcome weak point of the prior art, provides a kind of technique simple, easy to operate, the preparation of the two silver-colored LOW-E films of gold that production cost is relatively low.
In order to achieve the above object, the present invention adopts following scheme:
A preparation method for low-cost golden low radiation rate film, is characterized in that comprising the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substratexlayer;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, magnetron sputtering C rN on SSTOx layer in steps Axlayer;
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step Bxmagnetron sputtering Ag layer on layer;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C;
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D;
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e;
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F;
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G2layer.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that the layer of SSTOx described in steps A is 30～45nm, the volume ratio of described argon gas and oxygen is 1:2, and the sputtering power that described direct supply spatters is 75～115KW, minute two cathode sputterings.
The preparation method of a kind of low-cost golden low radiation rate film as above, is characterized in that CrN described in step Bxthe thickness of layer is 3～5nm, and the volume ratio of argon gas and nitrogen is 1:2, the sputtering power 3～6KW of described direct supply sputter chromium planar target.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that Ag layer described in step C is 8～10nm, the sputtering power 4～5KW of described direct supply.
The preparation method of a kind of low-cost golden low radiation rate film as above, is characterized in that the thickness of Si layer is 10～20nm described in step D, the sputtering power 3～6KW of described direct supply.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that the layer of AZO described in step e is 50～65nm, in Al-Doped ZnO pottery rotary target, mix by mass percentage aluminium 2%, the sputtering power 50～65KW of described alternating-current; With three rotating cathode sputters.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that the layer of Cu described in step F is 8～10nm, the sputtering power of described direct supply is 4～5KW.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that AZO layer described in step G is 20～25nm, in Al-Doped ZnO pottery rotary target, mix by mass percentage aluminium 2%, the sputtering power of described AC power is 20～25KW.
The preparation method of a kind of low-cost golden low radiation rate film as above, is characterized in that SiO described in step H2the thickness of layer is 20～30nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 50～75KW.
In sum, beneficial effect of the present invention:
Processing method of the present invention is simple, easy to operate, and production cost is relatively low, and film layer structure is minimum, and negative electrode usage quantity is few; Cost-saving; 24K gold tone, bright-colored; With Ag and Cu, substituting Au significantly reduces costs.
Embodiment
Below in conjunction with embodiment, the present invention is described further:
Embodiment 1
The preparation method of a kind of low-cost golden low radiation rate film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substratexlayer; Described SSTOxthe thickness of layer is 30nm, and the volume ratio of described argon gas and oxygen is 1:2, and the volume flow ratio of argon gas and oxygen is 500sccm:1000sccm, and the sputtering power that described direct supply spatters is 75KW, minute two cathode sputterings.
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps Axmagnetron sputtering C rN on layerxlayer; Described CrNxthe thickness of layer is 3nm, and the volume ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm, the sputtering power 3KW of described direct supply sputter chromium planar target.
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step Bxmagnetron sputtering Ag layer on layer; The thickness of described Ag layer is 8nm, the sputtering power 4KW of described direct supply.
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C; The thickness of described Si layer is 10nm, the sputtering power 3KW of described direct supply.
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D; The thickness of described AZO layer is 50nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, the sputtering power 50KW of described alternating-current; With three rotating cathode sputters.
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e; The thickness of described Cu layer is 8nm, and the sputtering power of described direct supply is 4KW.
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F; The thickness of described AZO layer is 20nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, and the sputtering power of described AC power is 20KW.
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G2layer.Described SiO2the thickness of layer is 20nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 50KW.
Embodiment 2
The preparation method of a kind of low-cost golden low radiation rate film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substratexlayer; Described SSTOxthe thickness of layer is 40nm, and the volume ratio of described argon gas and oxygen is 1:2, and the volume flow ratio of argon gas and oxygen is 500sccm:1000sccm, and the sputtering power that described direct supply spatters is 90KW, minute two cathode sputterings.
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps Axmagnetron sputtering C rN on layerxlayer; Described CrNxthe thickness of layer is 4nm, and the volume ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm, the sputtering power 4KW of described direct supply sputter chromium planar target.
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step Bxmagnetron sputtering Ag layer on layer; The thickness of described Ag layer is 9nm, the sputtering power 4.5KW of described direct supply.
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C; The thickness of described Si layer is 15nm, the sputtering power 4KW of described direct supply.
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D; The thickness of described AZO layer is 55nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, the sputtering power 55KW of described alternating-current; With three rotating cathode sputters.
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e; The thickness of described Cu layer is 9nm, and the sputtering power of described direct supply is 4.5KW.
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F; The thickness of described AZO layer is 22nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, and the sputtering power of described AC power is 23KW.
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G2layer.Described SiO2the thickness of layer is 25nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 60KW.
Embodiment 3
The preparation method of a kind of low-cost golden low radiation rate film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substratexlayer; Described SSTOxthe thickness of layer is 45nm, and the volume ratio of described argon gas and oxygen is 1:2, and the volume flow ratio of argon gas and oxygen is 500sccm:1000sccm, and the sputtering power that described direct supply spatters is 115KW, minute two cathode sputterings.
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps Axmagnetron sputtering C rN on layerxlayer; Described CrNxthe thickness of layer is 5nm, and the volume ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm, the sputtering power 6KW of described direct supply sputter chromium planar target.
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step Bxmagnetron sputtering Ag layer on layer; The thickness of described Ag layer is 10nm, the sputtering power 5KW of described direct supply.
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C; The thickness of described Si layer is 20nm, the sputtering power 6KW of described direct supply.
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D; The thickness of described AZO layer is 65nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, the sputtering power 65KW of described alternating-current; With three rotating cathode sputters.
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e; The thickness of described Cu layer is 10nm, and the sputtering power of described direct supply is 5KW.
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F; The thickness of described AZO layer is 25nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, and the sputtering power of described AC power is 25KW.
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G2layer.Described SiO2the thickness of layer is 30nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 75KW.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.