相关申请related application
本申请权利要求与2012年2月22日提交的名称为“FREQUENCYENHANCEDIMPEDANCEDEPENDENTPOWERCONTROLFORMULTI-FREQUENCYRFPULSING”、代理人案卷号为P2301P/LMRX-P222P1、申请号为61/602,040的共同受让的专利申请相关，并与2012年2月22日提交的名称为“METHODSANDAPPARATUSFORSYNCHRONIZINGRFPULSESINAPLASMAPROCESSINGSYSTEM”、代理人案卷号为P2296P/LMRX-P221P1、申请号为61/602,401的共同受让的专利申请相关，所有上述申请作为参考并入此处。The claims of this application are related to the commonly assigned patent application named "FREQUENCYENHANCEDIMPEDANCEDEPENDENTPOWERCONTROLFORMULTI-FREQUENCYRFPULSING" filed on February 22, 2012, with attorney docket number P2301P/LMRX-P222P1, application number 61/602,040, and is related to 2012 61/602,401, filed February 22, 2011, entitled "METHODSANDAPPARATUSFORSYNCHRONIZINGRFPULSESINAPLASMAPROCESSINGSYSTEM," Attorney Docket No. P2296P/LMRX-P221P1, Application No. 61/602,401, all of which are incorporated herein by reference.
技术领域technical field
本申请涉及等离子体处理系统，尤其是涉及用于在等离子体处理系统中控制等离子体的方法和装置。The present application relates to plasma processing systems, and more particularly to methods and apparatus for controlling plasmas in plasma processing systems.
背景技术Background technique
等离子体处理长久以来被用于处理衬底(例如，晶片或平板或其它衬底)以产生电子器件(例如，集成电路或平板显示器)。在等离子体处理中，衬底被置于等离子体处理室中，等离子体处理室采用一或多个电极来激发源气体(其可以是蚀刻剂源气体或沉积源气体)以形成用于处理衬底的等离子体。电极可由RF信号激发，该RF信号例如由RF发生器提供。Plasma processing has long been used to treat substrates (eg, wafers or flat panels or other substrates) to produce electronic devices (eg, integrated circuits or flat panel displays). In plasma processing, the substrate is placed in a plasma processing chamber that employs one or more electrodes to excite a source gas (which may be an etchant source gas or a deposition source gas) to form a substrate for processing the substrate. Bottom plasma. The electrodes can be excited by an RF signal provided, for example, by an RF generator.
在一些等离子体处理系统中，多个RF信号(其中一些可具有相同或不同的RF频率)可被提供给衬底承载电极(本文也称为下电极或卡盘)以生成等离子体，同时上电极被接地。在电容耦合等离子体处理系统中，例如，一或多个RF信号可被提供给下电极，而上电极被接地。In some plasma processing systems, multiple RF signals (some of which may have the same or different RF frequencies) may be provided to a substrate-carrying electrode (also referred to herein as the lower electrode or chuck) to generate a plasma while the upper The electrodes are grounded. In a capacitively coupled plasma processing system, for example, one or more RF signals may be provided to the lower electrode while the upper electrode is grounded.
在一些应用中，可施加多个RF信号脉冲。针对任意给定的RF信号，RF脉冲施加包括在可与RF频率不同(且通常慢于RF频率)的脉冲频率将该RF信号打开或关闭(或者在高功率电平和低功率电平之间交替，因为脉冲施加并不总是需要功率被关闭)。一般而言，以往RF脉冲施加被执行以改善某些处理结果(比如改善均匀性或减少蚀刻相关的损害)。In some applications, multiple RF signal pulses may be applied. For any given RF signal, RF pulsing involves turning the RF signal on or off (or alternating between high and low power levels) at a pulse frequency that can be different (and usually slower) than the RF frequency. , because pulse application does not always require power to be turned off). In general, RF pulse application has historically been performed to improve certain process results (such as improving uniformity or reducing etch-related damage).
各个RF信号的脉冲施加可以是不同步的或者是同步的。就同步脉冲施加而言，例如，如果两个信号RF1和RF2是同步的，则有针对每个信号RF2的有源脉冲的信号RF1的有源脉冲。两个RF信号的脉冲可以是同相的，或者一个RF脉冲的上升沿可落后于另一个RF脉冲的上升沿，或者一个RF脉冲的下降沿可落后于另一个RF脉冲的下降沿，或者RF脉冲可以是异相的。The pulsing of the individual RF signals may be asynchronous or synchronous. In terms of synchronization pulse application, for example, if two signals RF1 and RF2 are synchronized, there is an active pulse of signal RF1 for each active pulse of signal RF2. The pulses of the two RF signals can be in phase, or the rising edge of one RF pulse can lag the rising edge of the other RF pulse, or the falling edge of one RF pulse can lag the falling edge of the other RF pulse, or the RF pulse Can be out of phase.
如果各个RF信号的脉冲施加没有被很好地控制，则会有如下风险：在一或多个RF信号从低到高(反之亦然)的转变过程中可发生导致等离子体微扰的RF功率不稳定。这是因为在一或多个RF信号的这样的转变过程中，处理室中的等离子体条件改变了。这种改变可被会试图补偿检测到的等离子体条件改变的匹配网络和/或其它RF发生器检测到。这种补偿的反应性本性(reactivenature)意味着在等离子体条件改变检测和成功补偿之间的期间，存在导致等离子体不稳定的RF功率微扰。If the pulsing of the individual RF signals is not well controlled, there is a risk that RF power causing plasma perturbation can occur during one or more RF signal transitions from low to high (or vice versa) unstable. This is because during such transitions of one or more RF signals, the plasma conditions in the processing chamber change. Such changes may be detected by matching networks and/or other RF generators that will attempt to compensate for detected changes in plasma conditions. The reactive nature of this compensation means that in the period between detection of a plasma condition change and successful compensation, there are RF power perturbations that cause plasma instability.
图1示出了这种RF功率微扰的一个示例，其会导致脉冲RF信号之一的转变过程中的等离子体不稳定。在图1的示例中，2MHzRF信号以100Hz以50％的占空比在2500W和0W之间产生脉冲。出于说明的目的，假定60MHzRF信号在连续波形(CW)模式下运行，不产生脉冲。随着2MHzRF信号从低状态102转变到高状态104，响应于所提供的功率改变，室内的等离子体条件改变。当检测到这种等离子体条件改变时，60MHzRF信号示出为补偿(通过60MHzRF电源或匹配网络中的补偿电路)检测到的等离子体条件改变。Figure 1 shows an example of such a perturbation of the RF power that causes plasma instability during the transition of one of the pulsed RF signals. In the example of Figure 1, a 2MHz RF signal is pulsed between 2500W and 0W at 100Hz with a 50% duty cycle. For purposes of illustration, it is assumed that the 60MHz RF signal is operating in continuous waveform (CW) mode with no pulses generated. As the 2MHz RF signal transitions from the low state 102 to the high state 104, plasma conditions within the chamber change in response to the supplied power change. When such a plasma condition change is detected, the 60 MHz RF signal is shown to compensate (via the compensation circuit in the 60 MHz RF power supply or matching network) for the detected plasma condition change.
然而，这是反应性响应且依赖于首先检测2MHz脉冲RF信号(如前所述，其以100Hz的脉冲频率施加脉冲)从低到高的转变所引起的等离子体条件改变。延迟以及随后的响应导致由参考数字106示出的RF功率电平微扰，参考数字106示出了在从低到高的2MHz转变之后60MHzRF信号的功率电平中的短暂下降。在从高(110)到低(112)的2MHzRF转变之后，因60MHzRF信号的延迟响应而来的60MHzRF信号中的RF功率电平微扰的另一例子由参考数字108示出。其它RF功率微扰在图1中由例如参考数字114和116示出。由图1可知，这些RF功率微扰可在正方向上或者在负方向上且可具有不同的强度。这样的微扰导致不稳定的和/或难于控制的等离子体事件，影响处理结果和/或器件良率。However, this is a reactive response and relies on first detecting the change in plasma conditions caused by the low to high transition of the 2 MHz pulsed RF signal (which was pulsed at a pulse frequency of 100 Hz as previously described). The delay and subsequent response results in a perturbation in the RF power level shown by reference numeral 106, which shows a brief dip in the power level of the 60 MHz RF signal after the 2 MHz transition from low to high. Another example of a perturbation of the RF power level in a 60 MHz RF signal due to a delayed response of the 60 MHz RF signal is shown by reference numeral 108 after a 2 MHz RF transition from high (110) to low (112). Other RF power perturbations are shown in FIG. 1 by, for example, reference numerals 114 and 116 . It can be seen from FIG. 1 that these RF power perturbations can be in the positive direction or in the negative direction and can have different strengths. Such perturbations lead to unstable and/or difficult-to-control plasma events, affecting process results and/or device yield.
此外，在高密度、高性能器件的制造中，现代等离子体处理强加了严格的处理结果要求。用传统的恒定波形RF信号或者用传统的RF脉冲施加方法，不能到达一些工艺窗或者这些工艺窗非常窄。Furthermore, modern plasma processing imposes stringent process result requirements in the fabrication of high-density, high-performance devices. Some process windows cannot be reached or are very narrow with conventional constant waveform RF signals or with conventional RF pulse application methods.
各个RF信号的脉冲施加的操纵和进一步控制以改善等离子体稳定性和/或以提供额外的工艺控制钮在本发明的实施方式的多个目的之中。Manipulation and further control of the pulsing of individual RF signals to improve plasma stability and/or to provide additional process control knobs are among the objectives of embodiments of the present invention.
发明内容Contents of the invention
在一实施方式中，本发明涉及一种用于在具有至少一个电极的等离子体处理室中处理衬底的方法。所述等离子体处理室具有被耦合来为所述电极提供多个RF信号的多个RF电源。该方法包括使基极RF脉冲信号在第一脉冲频率在高功率电平和低功率电平之间施加脉冲，所述基极RF脉冲信号代表所述多个RF信号中具有所述多个RF信号的脉冲频率中的最低脉冲频率的第一RF信号，所述第一脉冲频率不同于所述基极RF脉冲信号的RF频率。In one embodiment, the invention relates to a method for processing a substrate in a plasma processing chamber having at least one electrode. The plasma processing chamber has a plurality of RF power sources coupled to provide a plurality of RF signals to the electrodes. The method includes pulsing a base RF pulse signal at a first pulse frequency between a high power level and a low power level, the base RF pulse signal being representative of the plurality of RF signals having the plurality of RF signals The first RF signal of the lowest pulse frequency among the pulse frequencies, the first pulse frequency is different from the RF frequency of the base RF pulse signal.
该方法还包括将控制信号至少发送给所述多个RF电源的子集，其中在处理所述衬底时，所述控制信号以不需要对由于所述基极脉冲信号的所述施加脉冲而来的一或多个室参数的改变进行感测的方式前摄地产生。The method also includes sending a control signal to at least a subset of said plurality of RF power supplies, wherein said control signal is configured so as not to require a response to said applied pulsing of said base pulse signal while said substrate is being processed. Proactively generated by sensing incoming changes in one or more chamber parameters.
该方法包括响应于所述控制信号，在第一预定义RF电源特定功率电平和不同于所述第一预定义RF电源特定功率电平的第二预定义RF电源特定功率电平之间，使多个所述RF电源的所述子集中的每一个施加脉冲。The method includes, in response to said control signal, between a first predefined RF power supply specific power level and a second predefined RF power supply specific power level different from said first predefined RF power supply specific power level, causing Each of said subset of a plurality of said RF power sources is pulsed.
下面在本发明的具体实施方式部分中，且结合附图，会对本发明的这些及其它特征进行更详细的描述。These and other features of the present invention will be described in more detail below in the detailed description of the present invention and in conjunction with the accompanying drawings.
附图说明Description of drawings
在附图中，以实施例的方式而非以限制的方式对本发明进行说明，且其中类似的参考数字指代类似的元件，其中：In the accompanying drawings, the invention is illustrated by way of example and not by way of limitation, and in which like reference numerals refer to like elements, wherein:
图1示出了这样的RF功率微扰的示例，其可在脉冲RF信号之一的转变过程中导致等离子体不稳定。Figure 1 shows an example of such an RF power perturbation that can cause plasma instability during a transition of one of the pulsed RF signals.
图2示出了根据本发明的实施方式的具有等离子体处理室且被配置用于各个RF信号脉冲施加状态的功率电平控制的简化的电容耦合等离子体处理系统。Figure 2 illustrates a simplified capacitively coupled plasma processing system having a plasma processing chamber configured for power level control for various RF signal pulse application states, in accordance with an embodiment of the present invention.
图3示出了两个RF信号的相对于时间的输出功率以说明在各个RF信号之间前摄地(proactively)同步脉冲施加的效果的图形。Figure 3 shows a graph of output power versus time for two RF signals to illustrate the effect of proactively sync pulse application between the respective RF signals.
图4示出了根据本发明的一实施方式的情形，其中60MHzRF信号具有其适配于2MHzRF信号的脉冲施加状态的功率电平。Fig. 4 shows a situation according to an embodiment of the present invention, where a 60 MHz RF signal has its power level adapted to the pulse application state of a 2 MHz RF signal.
图5示出了根据本发明的另一实施方式的情况，其中60MHzRF信号具有其适配于2MHzRF信号的脉冲施加状态的功率电平。Fig. 5 shows a situation according to another embodiment of the present invention, wherein a 60 MHz RF signal has its power level adapted to the pulse application state of a 2 MHz RF signal.
图6示出了根据本发明的另一实施方式的情况，其中27MHzRF信号和60MHzRF信号具有其适配于2MHzRF信号的脉冲施加状态的功率电平。FIG. 6 shows a situation according to another embodiment of the present invention, in which a 27 MHz RF signal and a 60 MHz RF signal have their power levels adapted to the pulse application state of the 2 MHz RF signal.
图7示出了说明如下事实的概念图的样张：在某些条件下，非基极RF发生器不能在所需功率设定点输出RF功率。Figure 7 shows a sample of a conceptual diagram illustrating the fact that under certain conditions, a non-base RF generator cannot output RF power at the desired power set point.
图8示出了根据本发明的实施方式的用于学习当基极RF发生器施加脉冲时用于非基极RF发生器的最佳调谐的RF频率的方法。FIG. 8 illustrates a method for learning an optimally tuned RF frequency for a non-base RF generator when the base RF generator is pulsed, according to an embodiment of the present invention.
图9示出了根据本发明的实施方式的用于当等离子体室提供有脉冲基极RF信号和至少一个非基极RF信号时将最佳RF功率输送给等离子体室中的等离子体负载的方法。9 illustrates a method for delivering optimal RF power to a plasma load in a plasma chamber when the plasma chamber is supplied with a pulsed base RF signal and at least one non-base RF signal, in accordance with an embodiment of the present invention. method.
具体实施方式detailed description
现在将参考本发明的如附图中所示的一些实施方式对本发明进行详细描述。在下面的描述中，许多具体细节被陈述以便提供对本发明的透彻理解。但显而易见的是，对本领域技术人员而言，本发明可在没有这些具体细节中的一些或全部的情况下被实施。另一方面，公知的工艺步骤和/或结构不会被详细描述以避免不必要地模糊本发明。The invention will now be described in detail with reference to some embodiments of the invention as shown in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and/or structures have not been described in detail to avoid unnecessarily obscuring the present invention.
下面将描述各种实施方式，包括方法和技术。应当牢记的是，本发明还可涵盖包括计算机可读介质的制造物件，在计算机可读介质上存储用于实施本发明技术的计算机可读指令。计算机可读介质可包括用于存储计算机可读代码的例如半导体的、磁的、光磁的、光的或者其它形式的计算机可读介质。进一步地，本发明还可涵盖用于实施本发明的实施方式的装置。这样的装置可包括专用和/或可编程的电路以执行关于本发明的实施方式的任务。这样的装置的实施例包括通用计算机和/或适当编程后的专用计算设备且可包括计算机/计算设备和适用于关于本发明的实施方式的各种任务的专用/可编程电路的组合。Various implementations, including methods and techniques, are described below. It should be kept in mind that the invention may also cover an article of manufacture that includes a computer-readable medium having stored thereon computer-readable instructions for implementing the techniques of the invention. The computer readable medium may include, for example, semiconductor, magnetic, optomagnetic, optical, or other forms of computer readable medium for storing computer readable code. Further, the present invention may also cover devices for carrying out the embodiments of the present invention. Such means may include dedicated and/or programmable circuitry to perform tasks pertaining to embodiments of the present invention. Examples of such apparatus include general purpose computers and/or suitably programmed special purpose computing devices and may include combinations of computer/computing devices and special purpose/programmable circuits adapted for various tasks related to embodiments of the invention.
本发明的实施方式涉及用于通过前摄地设置一或多个较高频率RF信号的RF功率电平以及前摄地控制脉冲施加以最小化处理过程中的RF功率微扰来控制等离子体处理的方法和装置。较高频率RF信号的功率电平被确定并接着响应于基极脉冲RF信号被分别设置。换句话说，较高频率RF信号的功率电平被确定并接着被分别设置以用于基极脉冲RF信号的高脉冲以及用于基极脉冲RF信号的低脉冲。Embodiments of the invention relate to methods for controlling plasma processing by proactively setting the RF power level of one or more higher frequency RF signals and proactively controlling pulse application to minimize RF power perturbations during processing methods and devices. The power levels of the higher frequency RF signals are determined and then respectively set in response to the base pulsed RF signals. In other words, the power level of the higher frequency RF signal is determined and then set separately for the high pulse of the base pulsed RF signal and for the low pulse of the base pulsed RF signal.
如本文所采用的术语，基极脉冲RF信号代表施加脉冲的最低频率RF信号。例如，如果下电极被提供三个RF信号(2MHz、27MHz和60MHz)且2MHzRF信号施加脉冲，则2MHzRF信号代表基极脉冲RF信号，因为它是施加脉冲的最低频率RF信号。作为另一示例，如果等离子体处理室被提供三个RF信号给其下电极(2MHz、27MHz和60MHz)且2MHzRF信号以连续波形(即，非脉冲模式)运行而27MHzRF信号和60MHzRF信号施加脉冲，则27MHzRF信号代表基极脉冲RF信号。As the term is used herein, the base pulsed RF signal represents the lowest frequency RF signal that is pulsed. For example, if the bottom electrode is supplied with three RF signals (2MHz, 27MHz, and 60MHz) and the 2MHz RF signal is pulsed, then the 2MHzRF signal represents the base pulsed RF signal because it is the lowest frequency RF signal pulsed. As another example, if a plasma processing chamber is provided with three RF signals to its lower electrode (2MHz, 27MHz, and 60MHz) and the 2MHzRF signal is run in a continuous waveform (i.e., non-pulsed mode) while the 27MHzRF signal and the 60MHzRF signal are pulsed, The 27MHz RF signal then represents the base pulsed RF signal.
为了阐明术语，基极脉冲RF信号可以与主RF信号相同或不同，主RF信号代表独立施加脉冲的RF信号。当多个RF电源施加脉冲时，所述RF电源中的一者可被指定为主RF电源并独立使其主RF信号脉冲。主RF电源可发出控制信号给其它RF电源以使施加脉冲同步。不要求主RF信号是最低频率的RF信号。因此，27MHz脉冲RF信号可作为2MHz脉冲RF信号的主RF信号，反之亦可。但是，本文所使用的术语基极脉冲RF信号是施加脉冲的最低频率RF信号。在这点上应当注意的是，使用主RF电源在RF电源之间同步脉冲施加只是使施加脉冲同步的一种方法。例如可采用外部电路来同步所有RF电源之间的脉冲施加。To clarify terminology, the base pulsed RF signal may be the same as or different from the main RF signal, which represents an independently pulsed RF signal. When multiple RF power sources are pulsed, one of the RF power sources can be designated as the master RF power source and independently pulse its master RF signal. The master RF power supply can send control signals to the other RF power supplies to synchronize the application of pulses. It is not required that the main RF signal be the lowest frequency RF signal. Therefore, the 27MHz pulsed RF signal can be used as the main RF signal of the 2MHz pulsed RF signal, and vice versa. However, the term base pulsed RF signal as used herein is the lowest frequency RF signal that is pulsed. It should be noted at this point that using a master RF power supply to synchronize pulse application between RF power supplies is only one method of synchronizing the application pulses. For example, external circuitry can be used to synchronize the pulse application between all RF power supplies.
在一或多种实施方式中，当基极RF信号施加脉冲时，其它脉冲RF信号中的每一个在其与基极脉冲RF信号的脉冲施加状态同步的第一预设功率电平和第二预设功率电平之间前摄地交替。第一预设功率电平代表其它脉冲RF信号的为基极RF信号的高脉冲确立的功率电平。第二预设功率电平代表其它脉冲RF信号的为基极RF信号的低脉冲确立的功率电平。In one or more embodiments, when the base RF signal is pulsed, each of the other pulsed RF signals operates at a first preset power level and a second preset power level that is synchronized with the pulsed state of the base pulsed RF signal. Alternate proactively between power levels. The first preset power level represents the power level of the other pulsed RF signal established for the high pulse of the base RF signal. The second preset power level represents the power level of the other pulsed RF signal established for the low pulse of the base RF signal.
例如，假定等离子体处理室被提供三个RF信号给其下电极(2MHz、27MHz和60MHz)且2MHz和27MHzRF信号二者均以100Hz施加脉冲。2MHz基极脉冲RF信号会以100Hz在2MHz高功率电平和2MHz低功率电平之间施加脉冲。27MHzRF信号响应于来自主RF电源或外部同步控制电路的控制信号会前摄地在第一预设功率电平(其响应于2MHz高功率电平而发生)和第二预设功率电平(其响应于2MHz低功率电平而发生)之间交替。For example, assume that the plasma processing chamber is supplied with three RF signals to its lower electrode (2MHz, 27MHz and 60MHz) and that both the 2MHz and 27MHz RF signals are pulsed at 100Hz. A 2MHz base pulsed RF signal is pulsed between a 2MHz high power level and a 2MHz low power level at 100Hz. The 27MHz RF signal will proactively switch between a first preset power level (which occurs in response to a 2MHz high power level) and a second preset power level (which Occurs in response to a 2MHz low power level) alternates between.
非基极脉冲RF信号(比如前述实施例中的27MHzRF信号)的预设功率电平被确定和/或确立以达到某些希望的处理结果。进一步地，非基极脉冲RF信号的第一预设功率电平和第二预设功率电平中的每一者均独立地针对基极脉冲RF信号的每一个脉冲施加状态进行确立。如此，它们独立地针对存在于基极RF信号(比如前述实施例中的2MHzRF信号)的高状态和基极RF信号的低状态期间的等离子体条件进行确定和/或确立。一旦这些预设功率电平针对非基极RF信号被确立(例如，在配方形成过程中)，则当基极脉冲RF信号在其高状态和其低状态之间施加脉冲时，非基极RF信号响应于来自主RF电源或来自外部同步控制电路的控制信号会在生产过程中(例如，在衬底处理过程中)在第一预设功率电平和第二预设功率电平之间交替。这种情况的另一种表述方式是非基极脉冲RF信号响应不仅依赖于基极RF信号施加脉冲的事实而且依赖于基极RF信号的状态(高或低)。Preset power levels for non-base pulsed RF signals (such as the 27 MHz RF signal in the previous embodiments) are determined and/or established to achieve certain desired processing results. Further, each of the first preset power level and the second preset power level of the non-base pulsed RF signal is independently established for each pulsed state of the base pulsed RF signal. As such, they independently determine and/or establish for the plasma conditions that exist during the high state of the base RF signal (such as the 2 MHz RF signal in the previous embodiment) and the low state of the base RF signal. Once these preset power levels are established for the non-base RF signal (e.g., during recipe formation), the non-base RF The signal alternates between a first preset power level and a second preset power level during production (eg, during substrate processing) in response to a control signal from the main RF power supply or from an external synchronous control circuit. Another way to state this is that the non-base pulsed RF signal response depends not only on the fact that the base RF signal is pulsed but also on the state (high or low) of the base RF signal.
在一或多种实施方式中，前摄响应被用于优化脉冲施加过程中RF功率的不稳定。本文所采用的术语前摄或前摄响应是指RF信号的补偿和/或脉冲施加被前摄地执行而不是反应性地执行。如前面所讨论的，反应性响应在匹配网络或与RF信号相关联的RF电源检测到室中的等离子体条件(举例来说，比如等离子体阻抗)因其它RF信号中的一者的脉冲施加而改变时发生。在反应性响应模式中，在这样的检测发生之后，该匹配网络或该RF电源作出响应以补偿检测到的等离子体条件改变。详细来说，在反应性响应模式中，匹配网络或RF电源只在检测作出之后进行响应。In one or more embodiments, proactive response is used to optimize RF power instability during pulse application. As used herein, the term proactive or proactively responsive means that the compensation and/or pulsing of the RF signal is performed proactively rather than reactively. As previously discussed, the reactive response is the detection of plasma conditions in the chamber (such as plasma impedance, for example) by the matching network or RF power source associated with the RF signal due to pulsed application of one of the other RF signals. And change occurs. In a reactive response mode, after such detection occurs, the matching network or the RF power supply responds to compensate for the detected plasma condition change. In detail, in reactive response mode, the matching network or RF power supply responds only after a detection is made.
相较而言，在前摄响应模式中，其它RF信号的匹配网络或RF电源的响应通过控制信号被前摄地开始而不需要等待检测。例如，外部控制电路和/或处理器和/或计算机可前摄地发送控制信号以指令匹配网络或RF电源基于其对其它RF信号中的一或多个的脉冲施加行为/时序的知识进行响应。这种控制信号和响应的发生不需要等待对脉冲相关的等离子体条件改变的检测发生。作为另一实施例，用于脉冲RF信号中的一者的RF发生器可与其它RF发生器通信以提供控制信号从而由其它RF发生器开始响应。在这种情况下，发出控制信号的RF发生器会作为主RF发生器，而其它RF发生器作为从RF发生器。代替响应于对等离子体条件改变的检测，主RF发生器前摄地发出控制信号给其从RF发生器。In contrast, in the proactive response mode, the response of the matching network or RF power supply to other RF signals is initiated proactively through the control signal without waiting for detection. For example, an external control circuit and/or processor and/or computer may proactively send control signals to instruct the matching network or RF power supply to respond based on its knowledge of the pulsing behavior/timing of one or more of the other RF signals . Such control signals and responses occur without waiting for the detection of a pulse-related plasma condition change to occur. As another example, the RF generator for one of the pulsed RF signals may communicate with the other RF generator to provide a control signal to initiate a response by the other RF generator. In this case, the RF generator that sends out the control signal will act as the master RF generator, and the other RF generators will act as slave RF generators. Instead of responding to detection of changes in plasma conditions, the master RF generator proactively sends control signals to its slave RF generators.
通过前摄地控制匹配网络的响应和/或其它RF发生器的响应，因脉冲施加而来的RF功率不稳定和/或等离子体微扰在持续时间上和/或在强度上被缩减。以这种方式，功率微扰被减少且等离子体稳定性得以增强。By proactively controlling the response of the matching network and/or the response of other RF generators, RF power instabilities and/or plasma perturbations due to pulsed application are reduced in duration and/or in magnitude. In this way, power perturbations are reduced and plasma stability is enhanced.
参考附图以及下面的讨论，可更好地理解本发明的实施方式的特征和优点。The features and advantages of embodiments of the invention may be better understood with reference to the drawings and the following discussion.
图2示出了根据本发明的实施方式的具有等离子体处理室204的简化的电容耦合等离子体处理系统202。虽然典型的等离子体处理系统可具有多个室，但为了阐述的目的只示出了一个室。此外还省略了本领域技术人员公知的其它细节，比如机器传送臂、储存盒、气体供应，等等。Figure 2 shows a simplified capacitively coupled plasma processing system 202 having a plasma processing chamber 204 in accordance with an embodiment of the present invention. While a typical plasma processing system may have multiple chambers, for purposes of illustration only one chamber is shown. Furthermore, other details known to those skilled in the art, such as robotic transfer arms, storage boxes, gas supplies, etc., have been omitted.
在图2的实施例中，上电极206被接地，而代表衬底架(substrateholder)或卡盘的下电极208通过匹配网络230被提供分别来自三个RF电源220、222和224的三个RF信号(2MHz,27MHz和60MHz)。虽然示出了三个RF信号和三个RF电源，但下电极208可被提供少至一个或者和所希望的一样多的RF信号。进一步地，虽然为了阐述选择了2MHz,27MHz和60MHz的RF频率，但如果需要也可使用不同的RF频率。所述的等离子体处理室204被配置用于介电蚀刻。In the embodiment of FIG. 2, the upper electrode 206 is grounded, while the lower electrode 208, which represents a substrate holder or chuck, is supplied with three RF signals from three RF power sources 220, 222, and 224, respectively, through a matching network 230. Signals (2MHz, 27MHz and 60MHz). Although three RF signals and three RF power supplies are shown, the bottom electrode 208 may be provided with as few as one or as many RF signals as desired. Further, although RF frequencies of 2 MHz, 27 MHz and 60 MHz were chosen for illustration, different RF frequencies could be used if desired. The plasma processing chamber 204 is configured for dielectric etching.
如本领域技术人员所知，匹配网络230将RF电源220、222和224的阻抗与等离子体处理室中的等离子体负载的阻抗进行匹配以最小化反射功率且最大化功率输出。根据本发明的实施方式，RF电源220、222和224处于通信中使得如果RF电源中的一者作为RF脉冲主电源，则该RF电源可前摄地发送控制信号给其它RF信号以便前摄地开始这些其它RF信号的脉冲施加。As known to those skilled in the art, matching network 230 matches the impedance of RF power supplies 220, 222, and 224 to the impedance of the plasma load in the plasma processing chamber to minimize reflected power and maximize power output. According to an embodiment of the present invention, the RF power supplies 220, 222, and 224 are in communication such that if one of the RF power supplies acts as the RF pulse master, that RF power supply can proactively send control signals to the other RF signal to proactively Pulse application of these other RF signals is started.
例如，RF电源220(2MHzRF电源)可作为脉冲主电源并经由导管231和232分别给RF电源222和224发送数字或模拟控制信号(举例来说，其可以是电信号或光信号)以指令RF电源222和224将它们的脉冲施加与主2MHzRF信号的脉冲施加(举例来说，与2MHzRF脉冲施加期间的上升沿、下降沿或者任意预定时间)同步，而不必等待对等离子体处理室204中的等离子体条件改变的检测。For example, RF power supply 220 (2 MHz RF power supply) may act as a pulsed main power supply and send digital or analog control signals (which may be, for example, electrical or optical signals) to RF power supplies 222 and 224 via conduits 231 and 232, respectively, to instruct the RF The power supplies 222 and 224 synchronize their pulsing with the pulsing of the main 2 MHz RF signal (for example, with the rising edge, falling edge, or any predetermined time during 2 MHz RF pulse application) without having to wait for the pulse application in the plasma processing chamber 204 Detection of changes in plasma conditions.
作为另一实施例，RF电源222(27MHzRF电源)可作为脉冲主电源并经由导管234和232分别给RF电源220和224发送数字或模拟控制信号(举例来说，其可以是电信号或光信号)以指令RF电源220和224将它们的脉冲施加与主27MHzRF信号的脉冲施加(举例来说，与MHzRF脉冲施加期间的上升沿、下降沿或者任意预定时间)同步，而不必等待对等离子体处理室204中的等离子体条件改变的检测。As another example, RF power supply 222 (27MHz RF power supply) can be used as a pulsed main power supply and send digital or analog control signals (for example, it can be an electrical or optical signal) to RF power supplies 220 and 224 via conduits 234 and 232, respectively. ) to instruct the RF power supplies 220 and 224 to synchronize their pulsing with that of the main 27 MHz RF signal (eg, with the rising edge, falling edge, or any predetermined time during MHzRF pulsing) without having to wait for the plasma process Detection of changes in plasma conditions in chamber 204 .
替代地，控制电路250可被用来为所有三个RF电源220、222和224提供控制信号，如所示。在这种情况下，没有RF电源会需要充当主电源且全部可从控制电路250接收前摄地指令RF电源施加脉冲的控制信号。通过前摄地控制各个RF信号的脉冲施加，RF功率微扰被最小化，如下面图3中所示。Alternatively, control circuit 250 may be used to provide control signals to all three RF power supplies 220, 222, and 224, as shown. In this case, no RF power supply would need to act as the primary power supply and all could receive a control signal from the control circuit 250 that proactively instructs the RF power supply to apply pulses. By proactively controlling the pulsing of individual RF signals, RF power perturbations are minimized, as shown in Figure 3 below.
图3示出了两个RF信号的相对于时间的输出功率的图形：2MHzRF信号302和60MHzRF信号304。2MHzRF信号302在100Hz以50％占空比在2500W和0W之间施加脉冲。为了阐述清晰，在图3的实施例中，60MHzRF信号304以其针对2MHzRF信号的高脉冲持续期间设定于900W的第一预设功率电平和其针对2MHzRF信号的低脉冲持续期间同样设定于900W的第二预设功率电平。在图3的实施例中，产生这些施加脉冲的RF信号的2MHz和60MHzRF电源二者均从公用控制电路(比如图2的控制电路250)接收控制信号并从而以同步方式前摄地施加脉冲而无需等待对等离子体条件改变的检测。替代地，RF电源中的一者(例如，2MHzRF电源或者27MHzRF电源)可作为针对其它RF电源的脉冲主电源且可前摄地发出控制信号以指令其它RF电源大体上同步地施加脉冲而无需等待对等离子体条件改变的检测。Figure 3 shows a graph of output power versus time for two RF signals: 2MHzRF signal 302 and 60MHzRF signal 304. 2MHzRF signal 302 is pulsed between 2500W and 0W at 100Hz with a 50% duty cycle. For clarity of illustration, in the embodiment of FIG. 3 , the 60 MHz RF signal 304 is set at a first preset power level of 900 W with its high pulse duration for the 2 MHz RF signal and its low pulse duration for the 2 MHz RF signal is also set at Second preset power level of 900W. In the embodiment of FIG. 3, both the 2MHz and 60MHz RF power supplies that generate these pulsed RF signals receive control signals from a common control circuit (such as control circuit 250 of FIG. 2) and thereby proactively pulse in a synchronized manner. There is no need to wait for detection of changes in plasma conditions. Alternatively, one of the RF power supplies (e.g., a 2 MHz RF power supply or a 27 MHz RF power supply) can act as a pulsed master power supply to the other RF power supply and can proactively issue a control signal to instruct the other RF power supply to apply pulses substantially synchronously without waiting Detection of changes in plasma conditions.
由图3可以看出，针对2MHz基极脉冲RF信号302的每个高-低或低-高转变，60MHzRF信号304中的功率微扰被保持得明显较低(在图3的实施例中低于3％)。这些由参考数字320、322、324和328示出。相较于其中60MHzRF电源在反应性模式中运行(即，响应于等离子体条件改变的检测而进行补偿)的图2中的情形，这里的RF功率微扰明显较小。这是因为一旦功率电平设定点针对非基极脉冲RF信号被确定，则非基极脉冲RF信号可在其两个功率设定点之间施加脉冲而无需基于接收控制信号而延迟，从而有助于更稳定的RF功率输出。It can be seen from FIG. 3 that the power perturbation in the 60 MHz RF signal 304 is kept significantly lower (low in the embodiment of FIG. 3 ) for each high-low or low-high transition of the 2 MHz base pulsed RF signal 302. at 3%). These are shown by reference numerals 320 , 322 , 324 and 328 . The RF power perturbations here are significantly smaller compared to the situation in Figure 2 where the 60 MHz RF power supply was run in reactive mode (ie, compensated in response to detection of changes in plasma conditions). This is because once a power level set point is determined for a non-base pulsed RF signal, the non-base pulsed RF signal can be pulsed between its two power set points without delay based on receiving a control signal, thereby Contributes to a more stable RF power output.
在一或多种实施方式中，非基极脉冲RF信号(即，较高RF频率脉冲信号)的第一功率电平和第二功率电平中的每一者可从一或多个可测量的等离子体处理室参数(举例来说，比如卡盘偏置或返回RF电流)动态地确定。通过“动态的”，应当理解的是，功率电平的这种确定例如可在配方形成或机器校准期间在算法上被完成，或者可在处理过程中即时(on-the-fly)完成。非基极脉冲RF信号的第一功率电平(对应于当基极脉冲RF信号处于其高状态时非基极脉冲RF信号的功率电平)可从一或多个等离子体处理室参数的传感器测量结果自动地被算法确定并针对基极脉冲RF信号的高状态进行计算。同样地，非基极脉冲RF信号的第二功率电平(对应于当基极脉冲RF信号处于其低状态时非基极脉冲RF信号的功率电平)可从一或多个等离子体处理室参数的传感器测量结果自动地被算法确定并针对基极脉冲RF信号的低状态进行计算。In one or more embodiments, each of the first power level and the second power level of the non-base pulsed RF signal (i.e., the higher RF frequency pulsed signal) can be derived from one or more measurable Plasma processing chamber parameters such as, for example, chuck bias or return RF current are determined dynamically. By "dynamic", it is understood that such determination of power levels may be done algorithmically, for example during recipe formation or machine calibration, or may be done on-the-fly during processing. The first power level of the non-base pulsed RF signal (corresponding to the power level of the non-base pulsed RF signal when the base pulsed RF signal is in its high state) may be obtained from sensors of one or more plasma processing chamber parameters Measurements are automatically determined by an algorithm and calculated for the high state of the base pulsed RF signal. Likewise, a second power level of the non-base pulsed RF signal (corresponding to the power level of the non-base pulsed RF signal when the base pulsed RF signal is in its low state) can be obtained from one or more plasma processing chambers. The sensor measurements of the parameters are automatically determined by the algorithm and calculated for the low state of the base pulsed RF signal.
在这种情况下，在基极RF脉冲信号的高状态和低状态期间、利用例如程序化的计算机、基于一或多个等离子体处理室参数的传感器测量结果动态地确定并设置非基极脉冲RF信号(即，较高频率脉冲RF信号)的功率电平以便达到希望的工艺参数的能力代表了一个优点，因为在基极脉冲RF信号的高状态期间以及在基极脉冲RF信号的低状态期间的较高频率脉冲RF功率信号的功率电平现在是用于工艺的单独控制钮。之后，非基极脉冲RF信号根据从主RF电源或者从外部控制器(例如，图2的控制器电路250)接收控制信号而简单地从第一预定义功率电平转变到第二预定义功率电平(反之亦然)。In this case, the non-base pulses are dynamically determined and set during the high and low states of the base RF pulse signal, using, for example, a programmed computer, based on sensor measurements of one or more plasma processing chamber parameters The ability to power the RF signal (i.e., a higher frequency pulsed RF signal) to achieve the desired process parameters represents an advantage because during the high state of the base pulsed RF signal and during the low state of the base pulsed RF signal The power level during the higher frequency pulsed RF power signal is now a separate control knob for the process. Thereafter, the non-base pulsed RF signal simply transitions from a first predefined power level to a second predefined power level upon receipt of a control signal from the main RF power supply or from an external controller (e.g., controller circuit 250 of FIG. 2 ). level (and vice versa).
要注意的是，第一预定义功率电平和第二预定义功率电平对每个RF电源而言是特定的。换句话说，27MHz电源可具有其自身的第一预定义RF电源特定(RF-power-supply-specific)功率电平和第二预定义RF电源特定功率电平，而60MHzRF电源可具有其自身的与27MHzRF电源的不同的第一预定义RF电源特定功率电平和第二预定义RF电源特定功率电平。It is to be noted that the first predefined power level and the second predefined power level are specific to each RF power supply. In other words, a 27MHz power supply may have its own first and second predefined RF-power-supply-specific power levels, while a 60MHz RF power supply may have its own and Different first predefined RF power supply specific power level and second predefined RF power supply specific power level of 27 MHz RF power supply.
在一或多种实施方式中，利用例如程序化的计算机、基于一或多个等离子体处理室参数(比如卡盘偏置)的传感器测量结果，基极脉冲RF信号的功率电平(即，高脉冲功率电平和低脉冲功率电平)也可被动态地确定以便达到希望的工艺参数(比如沉积率)。利用例如程序化的计算机、基于一或多个等离子体处理室参数的传感器测量结果动态地确定基极脉冲RF信号的功率电平以便达到希望的工艺参数的能力代表了一个优点，因为基极脉冲RF功率信号的功率电平现在是用于工艺的控制钮。In one or more embodiments, the power level of the base pulsed RF signal (i.e., High pulse power level and low pulse power level) can also be dynamically determined to achieve desired process parameters (such as deposition rate). The ability to dynamically determine the power level of the base pulsed RF signal based on sensor measurements of one or more plasma processing chamber parameters to achieve desired process parameters using, for example, a programmed computer represents an advantage because the base pulsed The power level of the RF power signal is now the control knob for the process.
图4示出了根据本发明的一实施方式的情形，其中2MHzRF信号402以100Hz以50％的占空比在2500W和0W之间进行脉冲施加。60MHzRF信号404以前摄方式被同步使得对2MHzRF信号的高状态而言，60MHzRF信号的功率电平在900W而在2MHzRF信号的低状态期间，60MHzRF信号的功率电平是450W。要注意的是，60MHzRF信号的这两个功率电平中的每一个鉴于基极RF脉冲信号(例如，2MHzRF信号)的具体状态(高或低)被分别确定并设置且被确定并设置来达到希望的工艺结果(比如低聚合物沉积、减少的晶片偏置，等等)。此外，图4的两个RF信号的脉冲施加前摄地发生，即，无需等待对等离子体条件的改变的检测或者对反映因基极RF信号脉冲而来的这种等离子体条件改变的一或多个室参数的改变的检测。如此，RF功率微扰和RF等离子体不稳定被大大减少。Figure 4 shows a situation in which a 2MHz RF signal 402 is pulsed between 2500W and 0W at 100Hz with a 50% duty cycle in accordance with an embodiment of the present invention. The 60MHzRF signal 404 is proactively synchronized such that for the high state of the 2MHzRF signal the power level of the 60MHzRF signal is 900W and during the low state of the 2MHzRF signal the power level of the 60MHzRF signal is 450W. It is to be noted that each of these two power levels of the 60MHz RF signal is determined and set separately and determined and set to achieve Desired process results (such as low polymer deposition, reduced wafer bias, etc.). Furthermore, the pulsing of the two RF signals of FIG. 4 occurs proactively, i.e., without waiting for the detection of a change in plasma condition or for a response to reflect such a change in plasma condition due to the pulsing of the base RF signal. Detection of changes in multiple chamber parameters. In this way, RF power perturbations and RF plasma instabilities are greatly reduced.
图5示出了根据本发明的另一实施方式的情况，其中2MHzRF信号502在100Hz以50％占空比在2500W和0W之间进行脉冲施加。60MHzRF信号504以前摄方式被同步使得对2MHzRF信号的高状态而言，60MHzRF信号的功率电平在900W。在2MHzRF信号的低状态期间，60MHzRF信号的功率电平被提高到1125W。图4和图5说明非基极RF信号(即，较高频率脉冲RF信号)的功率电平在基极脉冲RF信号从高状态转变到低状态之后可以更高或更低。再次地，要注意的是，60MHzRF信号的这两个功率电平中的每一个鉴于基极RF脉冲信号(例如，2MHzRF信号)的具体状态(高或低)被确定并设置且被确定并设置来达到希望的工艺结果(比如低聚合物沉积、减少的晶片偏置，等等)。此外，图4的两个RF信号的脉冲施加前摄地发生，即，无需等待对等离子体条件的改变的检测。如此，RF功率微扰和RF等离子体不稳定被大大减少。Figure 5 shows a situation according to another embodiment of the present invention, where a 2 MHz RF signal 502 is pulsed between 2500 W and 0 W at 100 Hz with a 50% duty cycle. The 60 MHz RF signal 504 is synchronized in a proactive manner such that for the high state of the 2 MHz RF signal, the power level of the 60 MHz RF signal is 900W. During the low state of the 2MHz RF signal, the power level of the 60MHz RF signal is boosted to 1125W. 4 and 5 illustrate that the power level of the non-base RF signal (ie, the higher frequency pulsed RF signal) can be higher or lower after the base pulsed RF signal transitions from a high state to a low state. Again, note that each of these two power levels for the 60MHz RF signal is determined and set in view of the specific state (high or low) of the base RF pulse signal (e.g., a 2MHz RF signal) to achieve desired process results (such as low polymer deposition, reduced wafer bias, etc.). Furthermore, the pulsing of the two RF signals of FIG. 4 occurs proactively, ie, without waiting for the detection of a change in plasma conditions. In this way, RF power perturbations and RF plasma instabilities are greatly reduced.
图6示出了根据本发明的另一实施方式的情况，其中2MHzRF信号602以100Hz以50％的占空比在2500W和0W之间进行脉冲施加。60MHzRF信号604以前摄方式被同步使得对2MHzRF信号的高状态而言，60MHzRF信号的功率电平在500W。在2MHzRF信号的低状态期间，60MHzRF信号的功率电平被提高到625W。27MHzRF信号606以前摄方式被同步使得对2MHzRF信号的高状态而言，27MHzRF信号的功率电平在1000W。在2MHzRF信号的低状态期间，27MHzRF信号的功率电平被降低到250W。再次地，要注意的是，60MHzRF信号的这两个功率电平中的每一个以及和27MHzRF信号的这两个功率电平中的每一个鉴于基极RF脉冲信号(例如，2MHzRF信号)的具体状态(高或低)被确定并设置且被确定并设置来达到希望的工艺结果(比如低聚合物沉积、减少的晶片偏置，等等)。Figure 6 shows a situation according to another embodiment of the invention, where a 2 MHz RF signal 602 is pulsed between 2500 W and 0 W at 100 Hz with a 50% duty cycle. The 60 MHz RF signal 604 is synchronized in a proactive manner such that for the high state of the 2 MHz RF signal, the power level of the 60 MHz RF signal is 500W. During the low state of the 2MHz RF signal, the power level of the 60MHz RF signal is boosted to 625W. The 27 MHz RF signal 606 is synchronized in a proactive manner such that for the high state of the 2 MHz RF signal, the power level of the 27 MHz RF signal is 1000W. During the low state of the 2MHzRF signal, the power level of the 27MHzRF signal is reduced to 250W. Again, note that each of these two power levels for the 60MHz RF signal and each of these two power levels for the 27MHz RF signal are specific to the base RF pulse signal (e.g., the 2MHz RF signal). A state (high or low) is determined and set and determined and set to achieve a desired process result (such as low polymer deposition, reduced wafer bias, etc.).
在图6的实施例中，RF电源(比如2MHzRF电源、27MHzRF电源或60MHzRF电源)之一可作为主电源且可发送控制信号给其它RF电源以前摄地同步脉冲施加。替代地，外部控制电路可作为主信号且可发送控制信号给所有三个RF电源以前摄地同步脉冲施加。In the embodiment of FIG. 6, one of the RF power sources (such as 2 MHz RF power, 27 MHz RF power or 60 MHz RF power) can be used as the main power and can send a control signal to the other RF power for proactive synchronization pulse application. Alternatively, an external control circuit can act as the master signal and can send control signals to all three RF power supplies to proactively synchronize pulse application.
如所述，各个RF信号的RF功率电平在基极脉冲RF信号的高状态期间以及在基极脉冲RF信号的低状态期间可被分别调谐以实现希望的工艺结果。作为实施例，可以相信的是可通过提高2MHzRF信号的RF功率电平来增加离子能量。增加离子能量是有益的，在某些情况下也可导致不必要的过度聚合物沉积。2MHzRF信号在其最佳脉冲频率以及最佳高RF功率电平和最佳低RF功率电平施加脉冲可导致增加离子能量却不遭到过度聚合物沉积。As mentioned, the RF power levels of the respective RF signals may be tuned separately during the high state of the base pulsed RF signal and during the low state of the base pulsed RF signal to achieve a desired process result. As an example, it is believed that ion energy can be increased by increasing the RF power level of the 2 MHz RF signal. Increased ion energy is beneficial and in some cases can lead to unnecessary excessive polymer deposition. The pulsing of the 2 MHz RF signal at its optimum pulse frequency and optimum high and low RF power levels can result in increased ion energy without excessive polymer deposition.
一旦基极脉冲RF信号的最佳RF功率电平被确定和/或设置，非基极脉冲RF信号(即，较高频率脉冲RF信号)的RF功率电平可针对基极脉冲RF信号的高状态以及基极脉冲RF信号的低状态分别进行确定和设置以进一步调谐工艺(比如调谐等离子体密度，因为较高频率RF信号的功率电平易于对等离子体密度影响更大)。这样这些不同RF脉冲施加信号的不同RF功率电平可以用作工艺的分立的控制钮。Once the optimum RF power level for the base pulsed RF signal is determined and/or set, the RF power level for the non-base pulsed RF signal (i.e., higher frequency pulsed RF signal) can be adjusted for the high The state and low state of the base pulsed RF signal are respectively determined and set to further tune the process (such as tuning the plasma density, since the power level of the higher frequency RF signal tends to have a greater effect on the plasma density). Thus the different RF power levels of these different RF pulsed signals can be used as discrete control knobs for the process.
如所述，由于各个脉冲RF信号被前摄地同步，所以RF功率微扰被最小化。即使RF信号(比如60MHzRF信号)被配方规定为以连续波形(CW)模式运行，在一实施方式中，设置这种RF信号以在基极脉冲RF信号(比如2MHzRF信号)的高状态二者期间在相同的功率电平(比如900W)前摄地施加脉冲也会是希望的，因为如图3中所示，相较于反应性补偿方法，这样在相同功率电平施加脉冲减少了RF功率微扰。As mentioned, since the individual pulsed RF signals are proactively synchronized, RF power perturbations are minimized. Even if an RF signal (such as a 60MHz RF signal) is formulated to operate in continuous waveform (CW) mode, in one embodiment, such an RF signal is set to Proactively pulsing at the same power level (say, 900W) would also be desirable because, as shown in Figure 3, such pulsing at the same power level reduces RF power disturb.
在一或多种实施方式中，基极脉冲RF信号和非基极RF信号的RF功率电平被设置使得等离子体在脉冲施加过程中被维持。换言之，等离子体在基极脉冲RF信号的低状态和/或非基极脉冲RF信号的低状态期间不被熄灭。保持等离子体点燃使得工艺控制通过单独的RF功率电平的工艺钮(如前所述)被运用得更加高效且还使等离子体扰动最小化，因为等离子体擦燃和/或点燃(如果等离子体被允许熄灭则擦燃和/或点燃会是必要的)对工艺的控制不如连续等离子体好。如此，可重复性和均匀性得到增强。In one or more embodiments, the RF power levels of the base pulsed RF signal and the non-base RF signal are set such that the plasma is maintained during pulse application. In other words, the plasma is not extinguished during the low state of the base pulsed RF signal and/or the low state of the non-base pulsed RF signal. Keeping the plasma ignited allows process control to be exercised more efficiently through individual RF power level process buttons (as previously described) and also minimizes plasma disturbances since plasma scuff and/or ignite (if the plasma Stroke and/or ignition would be necessary if allowed to extinguish) Control of the process is not as good as continuous plasma. In this way, repeatability and uniformity are enhanced.
在一或多种实施方式中，双模(bimodal)自动频率调谐技术和装置因此被公开。在双模自动频率调谐方法中，当基极RF信号从一种状态脉冲到另一种状态时，非基极RF信号的调谐频率被前摄地改变以针对基极RF信号的每一种状态确保高效且稳定的功率输出。In one or more implementations, bimodal automatic frequency tuning techniques and apparatus are thus disclosed. In the dual-mode automatic frequency tuning method, when the base RF signal is pulsed from one state to another, the tuning frequency of the non-base RF signal is proactively changed for each state of the base RF signal Ensure efficient and stable power output.
详细来说，现代RF电源能够调谐其输送的RF频率以改善功率输出(例如，通过改变被输送给负载的RF频率)。作为例子，60MHzRF发生器能够将其调谐RF频率改变例如5-10％(即，将输送给负载的RF频率改变60MHz的+/-5％-10％)。In detail, modern RF power supplies are capable of tuning the RF frequency they deliver to improve power output (eg, by changing the RF frequency delivered to the load). As an example, a 60MHz RF generator can vary its tuned RF frequency by, say, 5-10% (ie, vary the RF frequency delivered to the load by +/-5%-10% of 60MHz).
但是，这样的频率改变迄今是作为RF发生器在其传感器检测到输送给负载的RF功率的量改变时的事后响应来执行的。这种检测往往依赖于例如反射功率和正向功率之比(也称为伽玛)的测量结果。当RF发生器(例如基于一些预设伽玛阈值)检测到特征为低效功率输出的状况时，RF发生器会在频率调谐方案中改变其调谐RF频率以便更有效率地将功率输送给负载。However, such frequency changes have heretofore been performed as an afterthought response of the RF generator when its sensors detect a change in the amount of RF power delivered to the load. Such detection often relies on measurements such as the ratio of reflected power to forward power (also known as gamma). When the RF generator detects a condition characterized by inefficient power delivery (e.g. based on some preset gamma threshold), the RF generator changes its tuned RF frequency in a frequency tuning scheme to more efficiently deliver power to the load .
然而，目前的频率调谐方案的事后本性往往意味着当等离子体阻抗或等离子体负载发生改变时在响应上有迟延。在该延迟时间中，在某些条件(比如当基极RF信号从一种状态脉冲到另一种状态时)下，非基极RF发生器可以是非常低效的或者会不能在所需的功率设定点(由配方规定)输送功率直至非基极RF发生器将其调谐频率改变为足以适配改变的等离子体负载。However, the post-hoc nature of current frequency tuning schemes often means that there is a delay in response when plasma impedance or plasma loading changes. During this delay time, under certain conditions (such as when the base RF signal is pulsed from one state to another), the non-base RF generator can be very inefficient or fail to operate at the required The power set point (specified by the recipe) delivers power until the non-base RF generator changes its tuning frequency sufficiently to accommodate the changing plasma load.
根据本发明的一或多种实施方式，非基极RF信号的调谐频率针对基极RF信号的每个脉冲状态(例如，高或低)被提前确定。考虑这种情况，例如，当2MHz基极RF信号在大约1kHz以50％占空比施加脉冲时。例如，在学习阶段中，可以确定的是，当2MHz基极RF信号在其低脉冲状态(即，脉冲到低之后)时，60MHzRF发生器的功率输出在60MHzRF发生器实际上使用61MHz调谐频率输送其RF功率时是高效的。进一步地，可以确定的是，在另一实施例中，在学习阶段中，当2MHzRF信号在其高脉冲状态(例如，脉冲到高之后)时，60MHzRF发生器在60MHzRF发生器实际上使用59MHz调谐频率输送其RF功率时是高效的。According to one or more embodiments of the invention, the tuning frequency of the non-base RF signal is determined in advance for each pulse state (eg, high or low) of the base RF signal. Consider the case, for example, when a 2MHz base RF signal is pulsed at about 1kHz with a 50% duty cycle. For example, during the learning phase, it can be determined that when the 2MHz base RF signal is in its low pulsed state (i.e., after pulsing to low), the power output of the 60MHz RF generator is actually delivered using the 61MHz tuned frequency. Its RF power is highly efficient. Further, it can be determined that, in another embodiment, the 60 MHz RF generator actually uses 59 MHz tuning during the learning phase when the 2 MHz RF signal is in its high pulsed state (e.g., after pulsing high). A frequency is efficient when delivering its RF power.
在一或多种实施方式中，在生产过程中，60MHzRF发生器(在该实施例中即非基极RF发生器)会在基极RF信号从一种状态脉冲到另一种状态的同时前摄地改变其调谐频率。该频率改变可以说是前摄的，因为非基极RF发生器在调谐频率上的改变不是基于对因基极RF信号的脉冲施加而来的被60MHzRF发生器识别的等离子体条件上的改变或者阻抗上的改变的事后检测而作出的。In one or more implementations, during production, a 60MHz RF generator (in this example, a non-base RF generator) is preheated at the same time as the base RF signal is pulsed from one state to another. to change its tuning frequency. This frequency change can be said to be proactive because the change in the tuned frequency of the non-base RF generator is not based on a change in plasma conditions recognized by the 60 MHz RF generator due to the pulse application of the base RF signal or This is done with post-mortem detection of changes in impedance.
相反地，非基极RF发生器在调谐RF频率上的改变被同步使得该改变在最佳时间发生以在基极RF信号从一种状态脉冲到另一种状态时确保足够和/或高效的功率输出。例如，基于协调信号(其可由2MHzRF发生器或RF发生器中的任意一者或者由协调RF发生器的单独的控制电路发出)而非等待对因基极RF信号的脉冲施加而来的被60MHzRF发生器识别的等离子体条件上的改变或阻抗上的改变的检测，60MHzRF发生器可前摄地改变其RF调谐频率。一般而言，非基极RF发生器可在基极RF信号从一种脉冲状态脉冲到另一种脉冲状态的同时甚或在这之前改变其调谐频率。Conversely, the change in tuned RF frequency of the non-base RF generator is synchronized so that the change occurs at the optimal time to ensure adequate and/or efficient power output. For example, based on a coordinating signal (which can be issued by either a 2MHz RF generator or an RF generator, or by a separate control circuit of the coordinating RF generator) instead of waiting for a 60MHz RF signal due to the pulse application of the base RF signal Upon detection of a change in plasma condition or a change in impedance recognized by the generator, the 60 MHz RF generator can proactively change its RF tuning frequency. In general, a non-base RF generator can change its tuning frequency at the same time as or even before the base RF signal is pulsed from one pulse state to another.
图7示出了说明如下事实的概念图的样张：在某些条件下，非基极RF发生器不能在所需功率设定点输出RF功率。这是现有技术中的情形，举例而言。在图7的实施例中，基极2MHzRF发生器具有9kW的功率设定点(图7中未示)，而60MHzRF发生器具有750W的功率设定点。对各RF发生器而言，这些是希望的功率电平。进一步地，在图7的实施例中，基极2MHzRF信号持续5秒(从2.2秒到7.2秒)从高状态渐变(ramp)到低状态。Figure 7 shows a sample of a conceptual diagram illustrating the fact that under certain conditions, a non-base RF generator cannot output RF power at the desired power set point. This is the case in the prior art, for example. In the embodiment of FIG. 7, the base 2 MHz RF generator has a power set point of 9 kW (not shown in FIG. 7), and the 60 MHz RF generator has a power set point of 750 W. These are the desired power levels for each RF generator. Further, in the embodiment of FIG. 7, the base 2 MHz RF signal ramps from a high state to a low state for 5 seconds (from 2.2 seconds to 7.2 seconds).
在图7中，左竖轴代表由60MHzRF发生器输送的功率的量，而右竖轴代表60MHzRF发生器的调谐频率。两个竖轴相对于水平时间轴进行标绘。线702代表所输送的RF功率数量。线730代表60MHzRF发生器的调谐频率。In FIG. 7, the left vertical axis represents the amount of power delivered by the 60 MHz RF generator, while the right vertical axis represents the tuning frequency of the 60 MHz RF generator. The two vertical axes are plotted relative to the horizontal time axis. Line 702 represents the amount of RF power delivered. Line 730 represents the tuning frequency of the 60 MHz RF generator.
在点700，2MHzRF发生器处于高脉冲状态。在该点，60MHzRF发生器在约61MHz的调谐RF频率高效地输送其功率(时间t＝2秒时的线730)。At point 700, the 2MHz RF generator is pulsed high. At this point, the 60 MHz RF generator is efficiently delivering its power at a tuned RF frequency of about 61 MHz (line 730 at time t = 2 seconds).
在时间为2.2秒时，2MHz基极RF信号开始往下渐降(ramplow)，在7.2秒时到达其低状态。由RF功率线702可见，60MHzRF发生器感测等离子体负载的改变并试图维持其750W的功率设定点。在某个时间点，开始于约5秒处(点704)，60MHzRF发生器响应于检测到的等离子体负载的改变(其由2MHz基极信号渐降到低状态引起)开始向下改变其调谐频率以便提高RF功率输出的效率。At a time of 2.2 seconds, the 2MHz base RF signal begins to ramp down, reaching its low state at 7.2 seconds. As seen by RF power line 702, the 60MHz RF generator senses changes in plasma load and attempts to maintain its 750W power set point. At some point, beginning at about 5 seconds (point 704), the 60 MHz RF generator begins to change its tuning downward in response to a detected change in plasma loading (which is caused by the 2 MHz base signal ramping down to a low state) frequency in order to increase the efficiency of the RF power output.
在时间为7.2秒(水平时间轴上的参考数字706)时，2MHz基极RF信号处于其低状态。在图7中可见，由60MHzRF发生器输送的RF功率数量从点708到点710临时下降到约220W。由60MHzRF发生器输送的这个RF功率数量显著低于针对60MHzRF发生器的750W功率设定点。这代表了不良情况。At time 7.2 seconds (reference number 706 on the horizontal time axis), the 2 MHz base RF signal is in its low state. It can be seen in FIG. 7 that the amount of RF power delivered by the 60MHz RF generator temporarily drops from point 708 to point 710 to about 220W. This amount of RF power delivered by the 60MHz RF generator is significantly lower than the 750W power set point for the 60MHz RF generator. This represents a bad situation.
从点706到点712，60MHzRF发生器寻求能用2MHzRF信号在其低脉冲状态使60MHzRF功率在所需的750W功率设定点得以输送的调谐RF频率。在点714，60MHzRF发生器稳定到约59.75MHz的调谐RF频率。在该较低的调谐RF频率，60MHz发生器能够再次在其750W的设定点输送RF功率。From point 706 to point 712, the 60MHz RF generator seeks a tuned RF frequency that enables 60MHz RF power to be delivered at the desired 750W power set point with the 2MHz RF signal in its low pulse state. At point 714, the 60 MHz RF generator settles to a tuned RF frequency of approximately 59.75 MHz. At this lower tuned RF frequency, the 60MHz generator is again able to deliver RF power at its set point of 750W.
图7的概念图的样张示出了对于2MHz基极信号的每个脉冲状态而言，有用于60MHzRF发生器的最佳调谐RF频率。进一步地，如果60MHz发生器以事后方式(即，在检测到因2MHz基极RF信号的脉冲施加而来的等离子体负载的改变之后，按照图7所示)改变其调谐RF频率，则会存在如下情形：功率设定点和RF频率会如此以致60MHzRF发生器不能满足其所需的功率设定点。这在图7中示出于点706和712之间。A sample of the conceptual diagram of Figure 7 shows that for each pulse state of the 2MHz base signal there is an optimally tuned RF frequency for a 60MHz RF generator. Further, if the 60MHz generator changes its tuned RF frequency in an ex post facto manner (i.e., after detecting a change in plasma loading due to pulse application of the 2MHz base RF signal, as shown in Figure 7), there will be There are situations where the power set point and RF frequency will be such that a 60 MHz RF generator cannot meet its required power set point. This is shown between points 706 and 712 in FIG. 7 .
图8示出了根据本发明的实施方式的用于学习当基极RF发生器施加脉冲时用于非基极RF发生器的最佳调谐的RF频率的方法。在步骤802中，用脉冲基极RF信号和至少一个非基极RF信号激励(power)等离子体室。在步骤804中，以自动调谐模式操作非基极RF发生器以使非基极RF发生器能够搜寻其分别用于基极RF信号的高状态和低状态的最佳RF频率(f1和f2)。以该自动调谐模式，在基极RF信号的每一个状态期间，非基极RF发生器被允许搜寻其自身的调谐RF频率。针对基极RF信号的每一个状态的这些最佳RF频率(用于非基极RF信号)用作预定义RF频率，且非基极RF发生器在基极RF信号施加脉冲时前摄地从一个预定义RF频率切换到另一个预定义RF频率。FIG. 8 illustrates a method for learning an optimally tuned RF frequency for a non-base RF generator when the base RF generator is pulsed, according to an embodiment of the present invention. In step 802, a plasma chamber is powered with a pulsed base RF signal and at least one non-base RF signal. In step 804, the non-base RF generator is operated in auto-tune mode to enable the non-base RF generator to search for its optimum RF frequency (f1 and f2) for the high and low states of the base RF signal, respectively . In this autotune mode, the non-base RF generator is allowed to search for its own tuned RF frequency during each state of the base RF signal. These optimal RF frequencies (for non-base RF signals) for each state of the base RF signal are used as predefined RF frequencies, and the non-base RF generator proactively starts from Switches from one predefined RF frequency to another predefined RF frequency.
本文所采用的术语用于非基极RF发生器的最佳RF频率是指这样的RF频率：在该RF频率，非基极RF发生器可合意地或高效地输送其功率(按照某预定义的标准)和/或可满足其功率输出设定点。如此处所讨论的，有至少两个用于非基极发生器的最佳RF频率。这两个最佳RF频率对应于基极RF信号的两个交替状态。As used herein, the term optimal RF frequency for a non-base RF generator refers to the RF frequency at which the non-base RF generator can deliver its power desirably or efficiently (according to some predefined standard) and/or can meet its power output set point. As discussed here, there are at least two optimal RF frequencies for non-base generators. These two optimal RF frequencies correspond to two alternating states of the base RF signal.
要注意的是，生产过程中所采用的第一预定义RF频率和第二预定义RF频率对每个RF电源来说是特定的。换言之，27MHz电源可具有其自身的第一预定义RF电源特定(RF-power-supply-specific)RF频率和第二预定义RF电源特定RF频率，而60MHzRF电源可具有其自身的不同于27MHzRF电源的那些的第一预定义RF电源特定RF频率和第二预定义RF电源特定RF频率。It is to be noted that the first predefined RF frequency and the second predefined RF frequency used in the production process are specific to each RF power supply. In other words, a 27MHz power supply may have its own first predefined RF-power-supply-specific RF frequency and a second predefined RF-power-supply-specific RF frequency, while a 60MHz RF power supply may have its own The first predefined RF power supply specific RF frequency and the second predefined RF power supply specific RF frequency of those.
在一或多种实施方式中，室的所有其它条件优选地被设置使得它们尽可能接近地模拟生产时的条件。在另一实施方式中，非基极RF发生器的频率可被手动改变以(例如，通过测量伽玛)确定分别针对基极RF信号的高状态和低状态的最佳频率f1和f2。In one or more embodiments, all other conditions of the chamber are preferably set so that they mimic production conditions as closely as possible. In another embodiment, the frequency of the non-base RF generator can be manually varied to determine (eg, by measuring gamma) the optimum frequencies f1 and f2 for the high and low states of the base RF signal, respectively.
在步骤806中，针对基极RF信号的高状态和低状态的这些最佳非基极RF发生器频率可被记录和/或存储以在生产(即，在最佳非基极RF发生器频率于学习阶段中被习得之后的衬底的生产)过程中使用。在生产过程中，在基极RF信号施加脉冲时，非基极RF发生器前摄地在最佳RF频率f1和最佳RF频率f2之间切换而不是等待对等离子体阻抗或伽玛的改变的检测。In step 806, these optimal non-base RF generator frequencies for the high state and low state of the base RF signal may be recorded and/or stored for production (i.e., at the optimal non-base RF generator frequency used during the production of substrates after being learned in the learning phase. During production, the non-base RF generator proactively switches between optimal RF frequency f1 and optimal RF frequency f2 when the base RF signal is pulsed rather than waiting for a change to plasma impedance or gamma detection.
图9示出了根据本发明的实施方式的用于当等离子体室被提供有脉冲基极RF信号和至少一个非基极RF信号时将最佳RF功率输送给等离子体室中的等离子体负载的方法。在步骤902中，用脉冲基极RF信号和至少一个非基极RF信号激励(power)等离子体室。在步骤904中，以非自动调谐模式操作非基极RF发生器。在步骤906中，前摄地同步非基极RF信号的频率切换与基极RF发生器的脉冲施加。该前摄的同步使得在基极RF信号在其高状态和其低状态之间施加脉冲时，非基极RF发生器能够在预先习得的最佳调谐频率f1和预先习得的最佳调谐频率f2之间切换其调谐频率。非基极RF发生器的调谐频率的切换可以说是在生产过程中前摄的，因为该切换响应于同步信号被执行且独立于改变的等离子体负载条件感测(即，对反映这种因基极RF信号的脉冲施加而来的改变的等离子体负载条件的室参数的改变的检测)。Figure 9 illustrates a plasma load for optimal RF power delivery to a plasma chamber when the plasma chamber is provided with a pulsed base RF signal and at least one non-base RF signal, in accordance with an embodiment of the present invention Methods. In step 902, a plasma chamber is powered with a pulsed base RF signal and at least one non-base RF signal. In step 904, the non-base RF generator is operated in a non-autotune mode. In step 906, the frequency switching of the non-base RF signal is proactively synchronized with the pulse application of the base RF generator. This proactive synchronization enables the non-base RF generator to operate at the pre-learned optimal tuning frequency f1 and the pre-learned optimal tuning frequency f1 when the base RF signal is pulsed between its high state and its low state. It switches its tuning frequency between frequency f2. The switching of the tuning frequency of the non-base RF generator can be said to be proactive in the production process, since the switching is performed in response to a synchronization signal and is independent of sensing of changing plasma load conditions (i.e., no response to changes reflecting this factor). Detection of changes in chamber parameters for changing plasma loading conditions resulting from pulsed application of the base RF signal).
该同步信号可例如由基极RF发生器、由多个RF发生器中的任意RF发生器、或者由外部同步电路或计算机发出。在实施方式中，在基极RF信号从一种状态切换到另一种状态的同时，非基极RF发生器前摄地从一个预先习得的最佳RF频率f1切换到另一个预先习得的最佳RF频率f2。The synchronization signal may, for example, be issued by the base RF generator, by any of a plurality of RF generators, or by an external synchronization circuit or computer. In an embodiment, the non-base RF generator proactively switches from one pre-learned optimal RF frequency f1 to another pre-learned RF signal at the same time as the base RF signal switches from one state to another The best RF frequency f2.
例如，如果用于非基极RF发生器的预先习得的最佳RF频率f1对基极RF信号的高状态而言被确定是高效的且用于非基极RF发生器的预先习得的最佳RF频率f2对基极RF信号的低状态而言被确定是高效的，则非基极RF发生器可响应于同步信号在基极RF发生器脉冲到高状态时切换到预先习得的最佳RF频率f1。进一步地，非基极RF发生器可响应于同步信号在基极RF发生器脉冲到低状态时切换到预先习得的最佳RF频率f2。For example, if the pre-learned optimal RF frequency f1 for the non-base RF generator is determined to be efficient for a high state of the base RF signal and the pre-learned frequency f1 for the non-base RF generator The optimum RF frequency f2 is determined to be efficient for the low state of the base RF signal, then the non-base RF generator may switch to the pre-learned Optimal RF frequency f1. Further, the non-base RF generator may switch to the pre-learned optimum RF frequency f2 in response to the synchronization signal when the base RF generator is pulsed to a low state.
在另一实施方式中，非基极RF发生器可前摄地从一个预先习得的最佳RF频率f1切换到另一个预先习得的最佳RF频率f2，甚至稍稍在基极RF信号从一种状态切换到另一种状态之前。In another embodiment, the non-base RF generator can proactively switch from one pre-learned optimal RF frequency f1 to another pre-learned optimal RF frequency f2 even slightly after the base RF signal changes from before switching from one state to another.
在另一实施方式中，甚至稍稍在基极RF信号从一种状态切换到另一种状态之后，非基极RF发生器可前摄地从一个预先习得的最佳RF频率f1切换到另一个预先习得的最佳RF频率f2。In another embodiment, the non-base RF generator can proactively switch from one pre-learned optimal RF frequency f1 to another even slightly after the base RF signal switches from one state to another. A pre-learned optimal RF frequency f2.
在一或多种实施方式中，非基极RF发生器的前摄的非基极RF信号频率切换(例如，在预先习得的RF频率f1和预先习得的RF频率f2之间)可与非基极RF发生器的前摄的功率电平设置相结合以便在基极RF信号施加脉冲时改善RF功率的输出效率和稳定性。在一或多种实施方式中，非基极RF信号的前摄的频率切换和/或非基极RF发生器的前摄的功率电平切换可与基极RF信号的脉冲施加同步。如果包括多个非基极RF信号，则这些非基极RF信号的频率和/或功率电平可利用如针对单个非基极RF信号的情况所讨论的类似设置在基极RF信号施加脉冲时前摄地进行切换。In one or more implementations, the non-base RF generator's proactive non-base RF signal frequency switching (e.g., between pre-learned RF frequency f1 and pre-learned RF frequency f2) may be coupled with Proactive power level settings of the non-base RF generators combine to improve RF power output efficiency and stability when the base RF signal is pulsed. In one or more implementations, the proactive frequency switching of the non-base RF signal and/or the proactive power level switching of the non-base RF generator may be synchronized with the pulsing of the base RF signal. If multiple non-base RF signals are included, the frequencies and/or power levels of these non-base RF signals can be adjusted when the base RF signal is pulsed using similar settings as discussed for the case of a single non-base RF signal. Switch proactively.
由上述可知，本发明的实施方式改善了在基极RF信号在其高状态和其低状态之间施加脉冲时的RF功率输出的稳定性和效率。通过前摄地改变一个非基极RF发生器或多个非基极RF发生器(如果包括多个非基极RF发生器)的RF功率电平，在基极RF信号在其高状态和其低状态之间施加脉冲时，功率输出的稳定性得以改善。通过前摄地在用于一个非基极RF发生器或多个非基极RF发生器(如果包括多个非基极RF发生器)的预先习得的最佳RF频率之间切换，功率输出的效率得以提高或者使得针对基极RF信号的每一个脉冲状态或针对围绕从基极RF的高-低和低-高转变的持续时间的功率输出可行。From the foregoing, it can be seen that embodiments of the present invention improve the stability and efficiency of the RF power output when the base RF signal is pulsed between its high state and its low state. By proactively varying the RF power level of a non-base RF generator or multiple non-base RF generators (if multiple non-base RF generators are included), when the base RF signal is in its high state and its The stability of the power output is improved when pulses are applied between the low states. The power output The efficiency of is improved or the power output is made feasible for each pulse state of the base RF signal or for the duration around the high-low and low-high transitions from the base RF.
通过提供这些额外的控制钮，工艺配方窗可被打开以适应更严格的工艺要求，引领高密度/高性能器件的改良处理和良率。By providing these additional controls, the process recipe window can be opened to accommodate more stringent process requirements, leading to improved processing and yield for high-density/high-performance devices.
虽然本发明已经以若干优选实施方式进行了描述，但还有落在本发明的范围内的替代方式、置换方式和等同方式。应当注意的是，实施本发明的方法和装置有许多替代方法。虽然本文提供了多个实施例，但其意图是这些实施例是说明性的而非限制本发明。While this invention has been described in several preferred embodiments, there are alternatives, permutations, and equivalents, which fall within the scope of this invention. It should be noted that there are many alternative ways of implementing the methods and apparatus of the present invention. While various examples are provided herein, it is intended that these examples illustrate and not limit the invention.
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