技术领域technical field
本发明涉及一种钨层去除溶液，特别涉及用于在半导体芯片中去除钨层的钨层去除溶液。The invention relates to a tungsten layer removal solution, in particular to a tungsten layer removal solution for removing a tungsten layer in a semiconductor chip.
背景技术Background technique
在半导体芯片中钨层主要用于制作通孔（Via）和孔（Contact），具有连接不同电路层的作用。当钨层溅镀发生异常时则需要去除钨层，从而使半导体芯片生产可以返工，节约成本。另外，去除钨层对于失效分析，例如异常颗粒分析等具有重要作用。In the semiconductor chip, the tungsten layer is mainly used to make vias (Via) and holes (Contact), which have the function of connecting different circuit layers. When the sputtering of the tungsten layer is abnormal, the tungsten layer needs to be removed, so that the production of semiconductor chips can be reworked and the cost can be saved. In addition, removing the tungsten layer plays an important role in failure analysis, such as abnormal particle analysis.
目前，主要是通过等离子体刻蚀技术去除钨层，该方法存在着等离子体刻蚀设备成本高昂，配套设施较多，效率低下，操作复杂等缺点，并且，由于返工成本较高，所以，对于部分产品而言，当钨层溅镀发生异常时直接废弃而不进行返工，导致生产率降低。At present, the tungsten layer is mainly removed by plasma etching technology. This method has the disadvantages of high cost of plasma etching equipment, many supporting facilities, low efficiency, and complicated operation. Moreover, due to the high cost of rework, for For some products, when the sputtering of the tungsten layer is abnormal, it is directly discarded without rework, resulting in a decrease in productivity.
发明内容Contents of the invention
为了能够以低成本、较少的配套设施简便地去除钨层，本发明提供一种钨层去除溶液，具体方案如下。In order to easily remove the tungsten layer with low cost and few supporting facilities, the present invention provides a solution for removing the tungsten layer, and the specific scheme is as follows.
一种钨层去除溶液，由氨、过氧化氢及水组成，并且以质量百分比计，氨为8%~22%，过氧化氢为10%~19%，优选氨为10%~20%，过氧化氢为15%~18%，更优选氨为13.1%，过氧化氢为16.5%。A tungsten layer removal solution is composed of ammonia, hydrogen peroxide and water, and in terms of mass percentage, ammonia is 8% to 22%, hydrogen peroxide is 10% to 19%, preferably ammonia is 10% to 20%, Hydrogen peroxide is 15%~18%, more preferably ammonia is 13.1%, and hydrogen peroxide is 16.5%.
如果氨的质量百分比浓度小于8%或者过氧化氢的质量百分比浓度小于10%，则导致钨去除时间增加，从而影响生产效率，并且有可能造成钨层的去除不彻底。If the mass percent concentration of ammonia is less than 8% or the mass percent concentration of hydrogen peroxide is less than 10%, the tungsten removal time will increase, thereby affecting production efficiency, and may cause incomplete removal of the tungsten layer.
如果氨的质量百分比浓度大于22%或者过氧化氢的质量百分比浓度大于19%，则钨去除时间过短，有可能使钨层去除时间的控制误差变大；另外，由于钨层下方是氮化钛层，氮化钛层下方为钛层，氮化钛层不与氨水和过氧化氢反应，并保护其下方的钛层不与过氧化氢反应，但是当过氧化氢浓度过高时，会增加钛层与过氧化氢反应的风险，从而使钛层与氮化钛的脱落。If the mass percentage concentration of ammonia is greater than 22% or the mass percentage concentration of hydrogen peroxide is greater than 19%, the tungsten removal time is too short, which may increase the control error of the tungsten layer removal time; Titanium layer, below the titanium nitride layer is a titanium layer, the titanium nitride layer does not react with ammonia water and hydrogen peroxide, and protects the titanium layer below it from reacting with hydrogen peroxide, but when the concentration of hydrogen peroxide is too high, it will Increases the risk of the titanium layer reacting with hydrogen peroxide, resulting in the detachment of the titanium layer and titanium nitride.
本发明还提供一种制备钨层去除溶液的方法，该方法是通过在水中溶解氨、过氧化氢而得到。也可以通过直接混合氨水（例如，以质量百分比计氨为29%的氨水）和双氧水（例如，以质量百分比计过氧化氢为31%的双氧水）而得到所需浓度的钨层去除溶液。The invention also provides a method for preparing a tungsten layer removal solution, which is obtained by dissolving ammonia and hydrogen peroxide in water. The tungsten layer removal solution of the desired concentration can also be obtained by directly mixing ammonia water (for example, ammonia water with 29% ammonia by mass percentage) and hydrogen peroxide (for example, hydrogen peroxide with 31% hydrogen peroxide by mass percentage).
本发明还提供上述钨层去除溶液在半导体芯片中的应用。The present invention also provides the application of the above solution for removing the tungsten layer in semiconductor chips.
本发明中的半导体芯片优选依次由硅衬底、多晶硅层、介质层、金属层和钝化层构成，其中，所述金属层之间是通过钨制作的通孔进行连接，金属层与多晶硅层或者硅衬底之间是通过钨制作的孔进行连接。并且，所述介质层通常由二氧化硅构成，金属层通常由铝构成，钝化层通常由下层的二氧化硅层和上层的氮化硅层构成。The semiconductor chip in the present invention preferably consists of a silicon substrate, a polysilicon layer, a dielectric layer, a metal layer, and a passivation layer in sequence, wherein the metal layers are connected through through holes made of tungsten, and the metal layer and the polysilicon layer Or silicon substrates are connected through holes made of tungsten. Moreover, the dielectric layer is usually made of silicon dioxide, the metal layer is usually made of aluminum, and the passivation layer is usually made of a lower silicon dioxide layer and an upper silicon nitride layer.
本发明的钨层去除溶液可以用于在半导体芯片生产过程中钨层形成工艺发生异常时去除钨层，例如可以去除在制作半导体芯片的通孔或孔时溢出的钨层。还可以用于半导体芯片的失效分析。The tungsten layer removal solution of the present invention can be used to remove the tungsten layer when the tungsten layer formation process is abnormal in the semiconductor chip production process, for example, it can remove the tungsten layer overflowed when making the through hole or hole of the semiconductor chip. It can also be used for failure analysis of semiconductor chips.
本发明中的失效分析是指当产品的功能不全或无功能时对产品进行的分析，其目的是为了找出产生失效的原因，从而进一步提出预防或者改进措施。The failure analysis in the present invention refers to the analysis of the product when the function of the product is incomplete or non-functional, and its purpose is to find out the cause of the failure, so as to further propose preventive or improvement measures.
上述失效分析优选为异常颗粒分析或划伤层次分析。此处的异常颗粒是指，在钨层溅镀后或者在等离子体去除制作通孔或孔时溢出的钨层后所观察到的不明原因的颗粒。该颗粒最外层是钨，内部成分不清楚。为了确认颗粒是由于钨层异常而产生的，还是由于钨层下方的其他薄膜本来就存在小颗粒，必须去除颗粒最表面的钨，以观察内部是否有小颗粒存在。例如，在去除颗粒表面的钨层后发现其下面为平整的氮化钛层，故可以得知，该异常颗粒是由钨层溅镀异常产生的，而不是由钨层下方的薄膜层次产生。The above-mentioned failure analysis is preferably abnormal particle analysis or scratch hierarchy analysis. Abnormal particles here refer to unexplained particles observed after the sputtering of the tungsten layer or after the plasma removal of the overflowed tungsten layer when making vias or holes. The outermost layer of the particle is tungsten, and the inner composition is unclear. In order to confirm whether the particles are produced due to the abnormality of the tungsten layer, or because there are small particles in other films under the tungsten layer, the tungsten on the surface of the particles must be removed to observe whether there are small particles inside. For example, after removing the tungsten layer on the particle surface, it is found that there is a flat titanium nitride layer underneath, so it can be known that the abnormal particles are produced by abnormal sputtering of the tungsten layer, not by the film layer below the tungsten layer.
根据钨层的厚度以及所使用的钨层去除溶液的浓度，浸泡时间有所不同，例如约为2~4分钟。Depending on the thickness of the tungsten layer and the concentration of the tungsten layer removal solution used, the soaking time varies, for example, about 2 to 4 minutes.
利用本发明的钨层去除溶液，能够以低成本、较少的配套设施去除钨层，并且简化操作，提高生产效率。Utilizing the tungsten layer removal solution of the present invention, the tungsten layer can be removed with low cost and less supporting facilities, and the operation is simplified and the production efficiency is improved.
附图说明Description of drawings
图1是表示去除钨层前的状态的截面图；Fig. 1 is a sectional view showing the state before removing the tungsten layer;
图2是表示利用实施例1的钨层去除溶液去除钨层后的截面图；Fig. 2 is a cross-sectional view showing that the tungsten layer is removed by the tungsten layer removal solution of embodiment 1;
图3是表示去除钨层前的钨层表面的图；Figure 3 is a diagram representing the surface of the tungsten layer before removing the tungsten layer;
图4是表示利用实施例2的钨层去除溶液去除钨层后氮化钛层表面的图；Fig. 4 is a figure representing the surface of the titanium nitride layer after the tungsten layer is removed by the tungsten layer removal solution of Example 2;
图5是表示利用实施例3的钨层去除溶液去除钨层后氮化钛层表面的图；Fig. 5 is a figure representing the surface of the titanium nitride layer after the tungsten layer is removed by the tungsten layer removal solution of embodiment 3;
图6是表示利用实施例4的钨层去除溶液去除钨层后氮化钛层表面的图；Fig. 6 is a figure showing the surface of the titanium nitride layer after the tungsten layer is removed by the tungsten layer removal solution of Example 4;
图7是表示利用实施例5的钨层去除溶液去除钨层后氮化钛层表面的图；7 is a diagram showing the surface of the titanium nitride layer after removing the tungsten layer using the tungsten layer removal solution of Example 5;
图8是表示利用实施例6的钨层去除溶液去除钨层后氮化钛层表面的图；Fig. 8 is a figure showing the surface of the titanium nitride layer after the tungsten layer is removed by the tungsten layer removal solution of embodiment 6;
图9是表示利用比较例1的钨层去除溶液去除钨层后氮化钛层表面的图；9 is a diagram showing the surface of the titanium nitride layer after the tungsten layer is removed using the tungsten layer removal solution of Comparative Example 1;
图10是表示利用比较例2的钨层去除溶液去除钨层后氮化钛层表面的图。10 is a view showing the surface of the titanium nitride layer after the tungsten layer was removed by the tungsten layer removing solution of Comparative Example 2. FIG.
具体实施方式detailed description
以下利用具体实施例来说明本发明，但本发明并不限于这些实施例。需要说明的是，以下所使用的半导体芯片依次由硅衬底、多晶硅层、介质层、金属层和钝化层构成，其中，介质层由二氧化硅构成，金属层由铝构成，钝化层由下层的二氧化硅层和上层的氮化硅层构成。并且，上下金属层之间是通过钨制作的通孔进行连接，金属层与多晶硅层或者硅衬底之间是通过钨制作的孔进行连接。The present invention is described below using specific examples, but the present invention is not limited to these examples. It should be noted that the semiconductor chips used below are sequentially composed of a silicon substrate, a polysilicon layer, a dielectric layer, a metal layer and a passivation layer, wherein the dielectric layer is composed of silicon dioxide, the metal layer is composed of aluminum, and the passivation layer It consists of a lower layer of silicon dioxide and an upper layer of silicon nitride. In addition, the upper and lower metal layers are connected through holes made of tungsten, and the metal layer and the polysilicon layer or silicon substrate are connected through holes made of tungsten.
实施例1Example 1
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液1，其中，以质量百分比计，含有氨13.1％，含有过氧化氢16.5%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution 1, which contains 13.1% ammonia and 16.5% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将图1所示的钨层溅镀发生异常的半导体芯片浸泡在实施例1制备的钨层去除溶液1中，约3分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察表面钨层去除情况，如图2所示，在表面未观察到钨形貌，并且元素分析未分析到钨元素，从而说明钨层去除干净。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering shown in Figure 1 in the tungsten layer removal solution 1 prepared in Example 1, take out the semiconductor chip after about 3 minutes, clean it with deionized water, and scan the electronic chip. The removal of the tungsten layer on the surface was observed under a microscope. As shown in Figure 2, no tungsten morphology was observed on the surface, and no tungsten element was analyzed by elemental analysis, which indicated that the tungsten layer was removed completely.
实施例2Example 2
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液2，其中，以质量百分比计，含有氨20％，含有过氧化氢18%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution 2, which contains 20% ammonia and 18% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将如图3所示的钨层溅镀发生异常的半导体芯片浸泡在实施例2制备的钨层去除溶液2中，约2分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图4所示。由图4可知，钨层被去除，暴露氮化钛层。并且，对浸泡后的半导体芯片的表面进行元素分析，并未发现钨，由此可知钨层被完全去除。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering as shown in Figure 3 in the tungsten layer removal solution 2 prepared in Example 2, take out the semiconductor chip after about 2 minutes, clean it with deionized water, and scan The removal of the tungsten layer was observed under an electron microscope, and the results are shown in Figure 4. It can be seen from FIG. 4 that the tungsten layer is removed and the titanium nitride layer is exposed. Furthermore, elemental analysis was performed on the surface of the semiconductor chip after immersion, and no tungsten was found, which shows that the tungsten layer was completely removed.
实施例3Example 3
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液3，其中，以质量百分比计，含有氨22％，含有过氧化氢10%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution 3, which contains 22% ammonia and 10% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将钨层溅镀发生异常的半导体芯片浸泡在实施例3制备的钨层去除溶液3中，约3分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图5所示。由图5可知，钨层被去除，暴露氮化钛层。并且，对浸泡后的半导体芯片的表面进行元素分析，并未发现钨，由此可知钨层被完全去除。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering in the tungsten layer removal solution 3 prepared in Example 3, take out the semiconductor chip after about 3 minutes, clean it with deionized water, and observe the tungsten layer under a scanning electron microscope. The results are shown in Figure 5. It can be seen from FIG. 5 that the tungsten layer is removed and the titanium nitride layer is exposed. Furthermore, elemental analysis was performed on the surface of the semiconductor chip after immersion, and no tungsten was found, which shows that the tungsten layer was completely removed.
实施例4Example 4
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液4，其中，以质量百分比计，含有氨8％，含有过氧化氢19%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution 4, which contains 8% ammonia and 19% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将钨层溅镀发生异常的半导体芯片浸泡在实施例4制备的钨层去除溶液4中，约3分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图6所示。由图6可知，钨层被去除，暴露氮化钛层。并且，对浸泡后的半导体芯片的表面进行元素分析，并未发现钨，由此可知钨层被完全去除。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering in the tungsten layer removal solution 4 prepared in Example 4, take out the semiconductor chip after about 3 minutes, clean it with deionized water, and observe the tungsten layer under a scanning electron microscope. The results are shown in Figure 6. It can be seen from FIG. 6 that the tungsten layer is removed and the titanium nitride layer is exposed. Furthermore, elemental analysis was performed on the surface of the semiconductor chip after immersion, and no tungsten was found, which shows that the tungsten layer was completely removed.
实施例5Example 5
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液5，其中，以质量百分比计，含有氨10％，含有过氧化氢15%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution 5, which contains 10% ammonia and 15% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将钨层溅镀发生异常的半导体芯片浸泡在实施例5制备的钨层去除溶液5中，约4分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图7所示。由图7可知，钨层被去除，暴露氮化钛层。并且，对浸泡后的半导体芯片的表面进行元素分析，并未发现钨，由此可知钨层被完全去除。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering in the tungsten layer removal solution 5 prepared in Example 5, take out the semiconductor chip after about 4 minutes, clean it with deionized water, and observe the tungsten layer under a scanning electron microscope. The results are shown in Figure 7. It can be seen from FIG. 7 that the tungsten layer is removed and the titanium nitride layer is exposed. Furthermore, elemental analysis was performed on the surface of the semiconductor chip after immersion, and no tungsten was found, which shows that the tungsten layer was completely removed.
实施例6Example 6
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液6，其中，以质量百分比计，含有氨10％，含有过氧化氢18%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution 6, which contains 10% ammonia and 18% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将钨层溅镀发生异常的半导体芯片浸泡在实施例6制备的钨层去除溶液6中，约3分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图8所示。由图8可知，钨层被去除，暴露氮化钛层。并且，对浸泡后的半导体芯片的表面进行元素分析，并未发现钨，由此可知钨层被完全去除。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering in the tungsten layer removal solution 6 prepared in Example 6, take out the semiconductor chip after about 3 minutes, clean it with deionized water, and observe the tungsten layer under a scanning electron microscope. The results are shown in Figure 8. It can be seen from FIG. 8 that the tungsten layer is removed and the titanium nitride layer is exposed. Furthermore, elemental analysis was performed on the surface of the semiconductor chip after immersion, and no tungsten was found, which shows that the tungsten layer was completely removed.
比较例1Comparative example 1
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液a，其中，以质量百分比计，含有氨5％，含有过氧化氢7%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution a, which contains 5% ammonia and 7% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将钨层溅镀发生异常的半导体芯片浸泡在比较例1制备的钨层去除溶液a中，约4分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图9所示。由图9可知，钨层去除不彻底，表面仍残留有钨。At room temperature, immerse the semiconductor chip with abnormal tungsten layer sputtering in the tungsten layer removal solution a prepared in Comparative Example 1, take out the semiconductor chip after about 4 minutes, clean it with deionized water, and observe the tungsten layer under a scanning electron microscope. The results are shown in Figure 9. It can be seen from Figure 9 that the removal of the tungsten layer is not complete, and tungsten still remains on the surface.
比较例2Comparative example 2
钨层去除溶液的制备Preparation of tungsten layer removal solution
混合氨水和双氧水，得钨层去除溶液b，其中，以质量百分比计，含有氨25%，含有过氧化氢25%。Mix ammonia water and hydrogen peroxide to obtain tungsten layer removal solution b, which contains 25% ammonia and 25% hydrogen peroxide in mass percentage.
钨层的去除Tungsten layer removal
室温下，将钨层溅镀发生异常的半导体芯片浸泡在比较例2制备的钨层去除溶液b中，约4分钟后取出半导体芯片，用去离子水清洗干净，在扫描电子显微镜下观察钨层去除情况，结果如图10所示。由图10可知，钨层下方的氮化钛层与钛层发生剥落。At room temperature, soak the semiconductor chip with abnormal tungsten layer sputtering in the tungsten layer removal solution b prepared in Comparative Example 2, take out the semiconductor chip after about 4 minutes, clean it with deionized water, and observe the tungsten layer under a scanning electron microscope The results are shown in Figure 10. It can be seen from FIG. 10 that the titanium nitride layer and the titanium layer under the tungsten layer peeled off.
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的构思和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210191229.9ACN103484864B (en) | 2012-06-11 | 2012-06-11 | Tungsten layer removes solution |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210191229.9ACN103484864B (en) | 2012-06-11 | 2012-06-11 | Tungsten layer removes solution |
| Publication Number | Publication Date |
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| CN103484864A CN103484864A (en) | 2014-01-01 |
| CN103484864Btrue CN103484864B (en) | 2016-04-27 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210191229.9AExpired - Fee RelatedCN103484864B (en) | 2012-06-11 | 2012-06-11 | Tungsten layer removes solution |
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| CN (1) | CN103484864B (en) |
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| US4671852A (en)* | 1986-05-07 | 1987-06-09 | The Standard Oil Company | Method of forming suspended gate, chemically sensitive field-effect transistor |
| JPH08250462A (en)* | 1995-03-15 | 1996-09-27 | Nec Corp | Etching method |
| CN1233075A (en)* | 1998-04-17 | 1999-10-27 | 塞姆特里克斯公司 | Method for fabricating ferroelectric integrated circuits by dry and wet etching |
| CN1626699A (en)* | 2003-12-02 | 2005-06-15 | 关东化学株式会社 | Removing liquid for tungsten metal and method for removing tungsten metal using such liquid |
| CN101295640A (en)* | 2007-04-28 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Production method for polysilicon grid of DRAM |
| CN101457136A (en)* | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Lapping liquid and chemical-mechanical lapping method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4671852A (en)* | 1986-05-07 | 1987-06-09 | The Standard Oil Company | Method of forming suspended gate, chemically sensitive field-effect transistor |
| JPH08250462A (en)* | 1995-03-15 | 1996-09-27 | Nec Corp | Etching method |
| CN1233075A (en)* | 1998-04-17 | 1999-10-27 | 塞姆特里克斯公司 | Method for fabricating ferroelectric integrated circuits by dry and wet etching |
| CN1626699A (en)* | 2003-12-02 | 2005-06-15 | 关东化学株式会社 | Removing liquid for tungsten metal and method for removing tungsten metal using such liquid |
| CN101295640A (en)* | 2007-04-28 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Production method for polysilicon grid of DRAM |
| CN101457136A (en)* | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Lapping liquid and chemical-mechanical lapping method |
| Publication number | Publication date |
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| CN103484864A (en) | 2014-01-01 |
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| TR01 | Transfer of patent right | Effective date of registration:20220727 Address after:518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after:SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before:100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before:PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before:SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. | |
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| CF01 | Termination of patent right due to non-payment of annual fee | Granted publication date:20160427 |