技术领域technical field
本发明涉及一种先蚀后封三维系统级芯片倒装封装结构及工艺方法。属于半导体封装技术领域。The invention relates to a three-dimensional system-level chip flip-chip packaging structure and process method which are etched first and then sealed. It belongs to the technical field of semiconductor packaging.
背景技术Background technique
传统四面无引脚金属引线框封装结构如图79所示，其主要制作工艺是在取金属片进行化学蚀刻、金属电镀从而制成有承载芯片的基岛、内外引脚的金属引线框，再在此基础上进行单侧的装片、打线、包封等封装工艺。The traditional four-sided leadless metal lead frame package structure is shown in Figure 79. The main manufacturing process is to take the metal sheet for chemical etching and metal plating to make a metal lead frame with a base island for carrying chips and inner and outer pins, and then On this basis, one-sided chip loading, wire bonding, encapsulation and other packaging processes are carried out.
而传统的有机多层线路基板封装结构如图80所示，其主要工艺是在玻璃纤维板核心材料的基础上通过积成材料积成的方式叠加形成多层线路板，线路层之间通过激光钻孔的方式开孔，再镀孔完成电性连接。然后再在多层线路板的基础上进行单侧的装片、打线、包封等封装工艺。The traditional organic multilayer circuit substrate packaging structure is shown in Figure 80. Its main process is to form a multilayer circuit board by stacking the core material of the glass fiber board through the accumulation of materials, and laser drilling is used between the circuit layers. The hole is opened in the form of a hole, and then the hole is plated to complete the electrical connection. Then, on the basis of the multilayer circuit board, the packaging processes such as chip loading, wire bonding, and encapsulation are carried out on one side.
上述传统四面无引脚金属引线框封装结构与有机多层线路基板封装结构都存在以下不足：Both the above-mentioned traditional four-side leadless metal lead frame package structure and organic multilayer circuit substrate package structure have the following disadvantages:
1、此类金属引线框及多层线路基板都只能进行单侧的芯片封装，金属引线框或多层线路基板的利用率较低，从而限制整个封装的功能集成度。1. This type of metal lead frame and multilayer circuit substrate can only be packaged on one side of the chip, and the utilization rate of the metal lead frame or multilayer circuit substrate is low, thereby limiting the functional integration of the entire package.
2、此类金属引线框及多层线路基板本身不埋入任何物件，所以传统金属引线框及有机多层线路板不具备功能集成效果，从而也相应地限制了整个封装体的功能集成度。2. This type of metal lead frame and multilayer circuit board itself does not embed any objects, so the traditional metal lead frame and organic multilayer circuit board do not have the effect of functional integration, which accordingly limits the functional integration of the entire package.
3、有机多层基板的材料成本以及工艺制作成本较高。3. The cost of materials and manufacturing process of the organic multilayer substrate is relatively high.
4、传统金属引线框的线宽线距相当地大，至少都要100μm以上,所以无法做到高密度的需求。4. The line width and line spacing of traditional metal lead frames are quite large, at least 100 μm or more, so it cannot meet the high-density requirements.
5、传统的有机多层线路的线宽线距依据目前的蚀刻制作能力，只能达到25μm线宽以及25μm线距，稍微宽了点。5. The line width and line spacing of traditional organic multilayer circuits can only reach 25 μm line width and 25 μm line spacing according to the current etching production capacity, which is slightly wider.
发明内容Contents of the invention
本发明的目的在于克服上述不足，提供一种先封后蚀芯片正装三维系统级封装结构及工艺方法，它能够解决传统金属引线框或多层线路基板本身无法埋入芯片以及被动组件而限制整个封装功能集成度的问题以及传统有机基板需要更细线宽与更窄的线与线间距。The purpose of the present invention is to overcome the above-mentioned shortcomings, and provide a three-dimensional system-in-package structure and process method for sealing first and then etching chips, which can solve the problem that traditional metal lead frames or multilayer circuit substrates cannot embed chips and passive components. The problem of packaging functional integration and traditional organic substrates require thinner line width and narrower line-to-line spacing.
本发明的目的是这样实现的：一种先蚀后封三维系统级芯片倒装封装的工艺方法，所述方法包括如下步骤：The object of the present invention is achieved in the following way: a process method for etching first and then sealing a three-dimensional system-on-chip flip-chip package, said method comprising the following steps:
步骤一、取金属基板Step 1. Take the metal substrate
步骤二、金属基板表面预镀微铜层Step 2. Pre-plating a micro-copper layer on the surface of the metal substrate
步骤三、贴光阻膜作业Step 3: Paste the photoresist film
在完成预镀微铜层的金属基板正面及背面分别贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the front and back of the metal substrate that has been pre-plated with a micro-copper layer;
步骤四、金属基板背面去除部分光阻膜Step 4. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤三完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形；Use exposure and developing equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 3, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate;
步骤五、电镀金属线路层Step 5. Plating metal circuit layer
在步骤四中金属基板背面去除部分光阻膜的区域内电镀上金属线路层；Electroplate a metal circuit layer in the area where part of the photoresist film is removed on the back of the metal substrate in step 4;
步骤六、贴光阻膜作业Step 6. Paste photoresist film
在步骤五中金属基板背面贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the back of the metal substrate in step five;
步骤七、金属基板背面去除部分光阻膜Step 7. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤六完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形；Use the exposure and development equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 6, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate;
步骤八、电镀高导电金属线路层Step 8. Plating a highly conductive metal circuit layer
在步骤七中金属基板背面去除部分光阻膜的区域内电镀上高导电金属线路层，形成相应的基岛和引脚；Electroplate a highly conductive metal circuit layer in the area where part of the photoresist film is removed on the back of the metal substrate in step 7 to form corresponding base islands and pins;
步骤九、去除光阻膜Step 9. Remove the photoresist film
去除金属基板表面的光阻膜；Remove the photoresist film on the surface of the metal substrate;
步骤十、环氧树脂塑封Step 10. Epoxy resin plastic sealing
在金属基板背面的金属线路层表面利用环氧树脂材料进行塑封保护；The surface of the metal circuit layer on the back of the metal substrate is protected by plastic sealing with epoxy resin material;
步骤十一、环氧树脂表面研磨Step 11. Epoxy resin surface grinding
在完成环氧树脂塑封后进行环氧树脂表面研磨；After the epoxy resin molding is completed, the surface of the epoxy resin is ground;
步骤十二、贴光阻膜作业Step 12. Paste photoresist film
在完成步骤十一的金属基板正面和背面贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the front and back of the metal substrate that has completed step eleven;
步骤十三、金属基板正面去除部分光阻膜Step 13. Remove part of the photoresist film from the front of the metal substrate
利用曝光显影设备将步骤十二完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行蚀刻的区域图形；Exposing and developing the photoresist film on the front of the metal substrate after step 12 by using exposure and development equipment, developing and removing part of the photoresist film, so as to expose the pattern of the area that needs to be etched on the front of the metal substrate;
步骤十四、化学蚀刻Step 14. Chemical etching
将步骤十三中金属基板正面完成曝光显影的区域进行化学蚀刻；Perform chemical etching on the exposed and developed area of the front side of the metal substrate in step 13;
步骤十五、贴光阻膜作业Step 15. Paste photoresist film
在完成步骤十四的金属基板正面和背面贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the front and back of the metal substrate that has completed step 14;
步骤十六、金属基板正面去除部分光阻膜Step 16. Remove part of the photoresist film from the front of the metal substrate
利用曝光显影设备将步骤十五完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行电镀的区域图形；Use exposure and development equipment to expose, develop and remove part of the graphic photoresist film on the front of the metal substrate that has completed the photoresist film pasting operation in step 15, so as to expose the area pattern that needs to be electroplated on the front of the metal substrate;
步骤十七、电镀金属柱子Step seventeen, electroplating metal pillars
在步骤十六中金属基板正面去除部分光阻膜的区域内电镀上金属柱子；Electroplating metal pillars in the area where part of the photoresist film is removed from the front of the metal substrate in step 16;
步骤十八、去除光阻膜Step 18. Remove the photoresist film
去除金属基板表面的光阻膜；Remove the photoresist film on the surface of the metal substrate;
步骤十九、涂覆粘结物质Step 19. Apply the bonding substance
在步骤八形成的基岛正面涂覆导电或不导电粘结物质；Coating conductive or non-conductive bonding substances on the front side of the base island formed in step eight;
步骤二十、装片Step 20, loading film
在步骤十九的导电或不导电粘结物质上植入第一芯片；Implanting the first chip on the conductive or non-conductive adhesive substance in step 19;
步骤二十一、金属线键合Step 21. Metal wire bonding
在第一芯片正面与引脚正面之间进行键合金属线作业；Perform bonding metal wire operation between the front side of the first chip and the front side of the pin;
步骤二十二、包封Step 22. Encapsulation
将步骤二十一中的金属基板正面采用塑封料进行塑封；Plastic-encapsulate the front of the metal substrate in step 21 with a plastic encapsulant;
步骤二十三、环氧树脂表面研磨Step 23. Epoxy resin surface grinding
在完成步骤二十二的环氧树脂塑封后进行环氧树脂表面研磨；Carry out epoxy resin surface grinding after completing the epoxy resin molding in step 22;
步骤二十四、电镀抗氧化金属层或批覆抗氧化剂(OSP)Step 24, electroplating an anti-oxidation metal layer or coating anti-oxidant (OSP)
在完成步骤二十三后的金属基板表面裸露在外的金属进行电镀抗氧化金属层或批覆抗氧化剂(OSP)。After completing step 23, the exposed metal on the surface of the metal substrate is electroplated with an anti-oxidation metal layer or coated with an antioxidant (OSP).
步骤二十五、倒装芯片Step 25, flip chip
在步骤二十四的基岛和引脚背面通过底部填充胶填满金属球与金属球之间以及芯片与基岛、引脚之间的空隙倒装第二芯片。In step 24, on the back of the base island and the pins, fill the gaps between the metal balls and between the chip, the base island and the pins with the underfill glue and flip-chip the second chip.
步骤二十六、包封Step 26. Encapsulation
将步骤二十五中的金属基板背面采用塑封料进行塑封。Plastic-seal the back of the metal substrate in step 25 with a molding compound.
步骤二十七、切割成品Step 27. Cut the finished product
将步骤二十六完成包封的半成品进行切割作业，制得先蚀后封三维系统级芯片倒装封装结构。Cutting the semi-finished product that has been encapsulated in step 26 to obtain a three-dimensional SoC flip-chip packaging structure that is etched first and then sealed.
一种先蚀后封三维系统级芯片倒装封装结构，它包括基岛和引脚，在所述基岛的正面通过导电或不导电物质正装有第一芯片，在所述基岛和引脚的背面通过底部填充胶倒装有第二芯片，所述第一芯片的正面与引脚的正面之间用金属线相连接，在所述引脚正面设置有导电柱子，所述基岛外围的区域、基岛和引脚之间的区域、引脚与引脚之间的区域、基岛和引脚上部的区域、基岛和引脚下部的区域以及第一芯片和第二芯片、金属线和导电柱子外均包封有塑封料，所述塑封料与导电柱子的顶部齐平，在所述导电柱子露出塑封料的表面镀有抗氧化层或被覆抗氧化剂。An etch-before-seal three-dimensional system-on-a-chip flip-chip package structure, which includes a base island and pins, a first chip is mounted on the front side of the base island through a conductive or non-conductive substance, and the base island and pins A second chip is flip-mounted on the back of the substrate through an underfill glue, the front of the first chip is connected to the front of the pins with metal wires, conductive pillars are arranged on the front of the pins, and the outer periphery of the base island Area, area between base island and pin, area between pin and pin, area above base island and pin, area below base island and pin, and first and second die, metal lines Both the outer surface of the conductive pillar and the conductive pillar are encapsulated with a molding compound, the molding compound is flush with the top of the conductive pillar, and the surface of the conductive pillar exposed from the molding compound is plated with an anti-oxidation layer or covered with an antioxidant.
所述引脚与引脚之间、引脚与基岛之间、引脚与静电释放圈之间以及静电释放圈与基岛之间通过导电粘结物质跨接无源器件，所述无源器件跨接于引脚背面与引脚背面之间、引脚背面与基岛背面之间、引脚背面与静电释放圈背面之间以及静电释放圈背面与基岛背面之间。Between the pins, between the pins and the base island, between the pins and the electrostatic discharge ring, and between the electrostatic discharge ring and the base island, a conductive bonding material is used to bridge the passive device. The device is connected between the back of the pin and the back of the pin, between the back of the pin and the back of the base island, between the back of the pin and the back of the electrostatic discharge ring, and between the back of the electrostatic release ring and the back of the base island.
所述基岛和引脚背面通过底部填充胶填满金属球与金属球之间以及芯片与基岛、芯片之间的空隙倒装有多个第二芯片The base island and the back of the pins are filled with underfill glue in the gaps between the metal balls and between the chip and the base island and the chip, and a plurality of second chips are flipped
在所述第二芯片背面通过导电或不导电粘结物质设置有第三芯片，所述第三芯片正面与引脚背面之间通过金属线相连。A third chip is provided on the back of the second chip through a conductive or non-conductive adhesive substance, and the front of the third chip is connected to the back of the pins through metal wires.
在所述引脚背面通过金属球倒装有第三芯片，所述金属球和第三芯片处于塑封料的内部。A third chip is flip-mounted through metal balls on the back of the pins, and the metal balls and the third chip are inside the molding compound.
在所述引脚背面通过金属球倒装有无源器件，所述金属球和无源器件处于塑封料的内部。Passive devices are flip-mounted through metal balls on the back of the pins, and the metal balls and passive devices are inside the molding compound.
一种先蚀后封三维系统级芯片倒装封装的工艺方法，所述方法包括如下步骤：A process method for etching first and then sealing a three-dimensional system-in-chip flip-chip package, said method comprising the following steps:
步骤一、取金属基板Step 1. Take the metal substrate
步骤二、金属基板表面预镀微铜层Step 2. Pre-plating a micro-copper layer on the surface of the metal substrate
步骤三、贴光阻膜作业Step 3: Paste the photoresist film
在完成预镀微铜层的金属基板正面及背面分别贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the front and back of the metal substrate that has been pre-plated with a micro-copper layer;
步骤四、金属基板背面去除部分光阻膜Step 4. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤三完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形；Use exposure and developing equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 3, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate;
步骤五、电镀第一金属线路层Step 5. Electroplating the first metal circuit layer
在步骤四中金属基板背面去除部分光阻膜的区域内电镀上第一金属线路层；Electroplate the first metal circuit layer in the area where part of the photoresist film is removed on the back of the metal substrate in step 4;
步骤六、贴光阻膜作业Step 6. Paste photoresist film
在步骤五中金属基板背面贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the back of the metal substrate in step five;
步骤七、金属基板背面去除部分光阻膜Step 7. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤六完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形；Use the exposure and development equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 6, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate;
步骤八、电镀第二金属线路层Step 8. Electroplating the second metal circuit layer
在步骤七中金属基板背面去除部分光阻膜的区域内电镀上第二金属线路层作为用以连接第一金属线路层与第三金属线路层的导电柱子；Electroplate the second metal circuit layer in the area where part of the photoresist film is removed on the back of the metal substrate in step 7 as a conductive pillar for connecting the first metal circuit layer and the third metal circuit layer;
步骤九、去除光阻膜Step 9. Remove the photoresist film
去除金属基板表面的光阻膜；Remove the photoresist film on the surface of the metal substrate;
步骤十、贴压不导电胶膜作业Step 10. Paste and press the non-conductive film
在金属基板背面贴压一层不导电胶膜；Paste a layer of non-conductive adhesive film on the back of the metal substrate;
步骤十一、研磨不导电胶膜表面Step 11. Grinding the surface of the non-conductive film
在完成不导电胶膜贴压后进行表面研磨；Surface grinding is carried out after the non-conductive film is pasted and pressed;
步骤十二、不导电胶膜表面金属化预处理Step 12. Metallization pretreatment on the surface of the non-conductive film
对不导电胶膜表面进行金属化预处理；Metallization pretreatment on the surface of the non-conductive film;
步骤十三、贴光阻膜作业Step 13. Paste photoresist film
在步骤十二中金属基板正面和背面贴上可进行曝光显影的光阻膜；In step 12, attach a photoresist film that can be exposed and developed on the front and back of the metal substrate;
步骤十四、金属基板背面去除部分光阻膜Step 14. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤十三完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行蚀刻的区域图形；Using the exposure and developing equipment, perform graphic exposure, development and removal of part of the graphic photoresist film on the back of the metal substrate that has been pasted with the photoresist film in step 13, so as to expose the pattern of the area that needs to be etched on the back of the metal substrate;
步骤十五、蚀刻作业Step 15. Etching
在步骤十四完成光阻膜开窗后的区域进行蚀刻作业；Etching is carried out in the area after the window opening of the photoresist film is completed in step 14;
步骤十六、金属基板背面去除光阻膜Step 16. Remove the photoresist film on the back of the metal substrate
去除金属基板背面的光阻膜，以露出后续需要进行被电镀的金属区域图形；Remove the photoresist film on the back of the metal substrate to expose the pattern of the metal area that needs to be electroplated;
步骤十七、电镀第三金属线路层Step seventeen, electroplating the third metal circuit layer
在步骤十六的金属基板背面进行第三金属线路层的电镀工作；Electroplating the third metal circuit layer on the back of the metal substrate in step sixteen;
步骤十八、贴光阻膜作业Step 18. Paste photoresist film
在步骤十七的金属基板背面贴上可进行曝光显影的光阻膜；Paste a photoresist film capable of exposure and development on the back of the metal substrate in step 17;
步骤十九、金属基板背面去除部分光阻膜Step 19. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤十八完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形；Exposing, developing and removing part of the graphic photoresist film on the back of the metal substrate on which the photoresist film pasting operation has been completed in step 18 by using exposure and development equipment, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate;
步骤二十、电镀第四金属线路层Step 20, electroplating the fourth metal circuit layer
在步骤十九中金属基板背面去除部分光阻膜的区域内电镀上第四金属线路层作为用以连接第三金属线路层与第五金属线路层的导电柱子；Electroplate the fourth metal circuit layer in the area where part of the photoresist film is removed on the back of the metal substrate in step nineteen as a conductive pillar for connecting the third metal circuit layer and the fifth metal circuit layer;
步骤二十一、去除光阻膜Step 21. Remove the photoresist film
去除金属基板表面的光阻膜；Remove the photoresist film on the surface of the metal substrate;
步骤二十二、贴压不导电胶膜作业Step 22. Paste and press the non-conductive film
在金属基板背面贴压一层不导电胶膜；Paste a layer of non-conductive adhesive film on the back of the metal substrate;
步骤二十三、研磨不导电胶膜表面Step 23. Grinding the surface of the non-conductive film
在完成不导电胶膜贴压后进行表面研磨；Surface grinding is carried out after the non-conductive film is pasted and pressed;
步骤二十四、不导电胶膜表面金属化预处理Step 24. Metallization pretreatment on the surface of the non-conductive film
对不导电胶膜表面进行金属化预处理；Metallization pretreatment on the surface of the non-conductive film;
步骤二十五、贴光阻膜作业Step 25. Paste the photoresist film
在步骤二十四中金属基板正面和背面贴上可进行曝光显影的光阻膜；In step 24, attach a photoresist film that can be exposed and developed on the front and back of the metal substrate;
步骤二十六、金属基板背面去除部分光阻膜Step 26. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备将步骤二十五完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行蚀刻的区域图形；步骤二十七、蚀刻作业Use exposure and development equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 25, so as to expose the pattern of the area that needs to be etched on the back of the metal substrate; step 27, Etching
在步骤二十六完成光阻膜开窗后的区域进行蚀刻作业；In step 26, the etching operation is carried out in the area after the window opening of the photoresist film is completed;
步骤二十八、金属基板背面去除光阻膜Step 28, remove the photoresist film on the back of the metal substrate
去除金属基板背面的光阻膜；Remove the photoresist film on the back of the metal substrate;
步骤二十九、电镀第五金属线路层Step 29, electroplating the fifth metal circuit layer
在步骤二十八的金属基板背面进行第五金属线路层的电镀工作，第五金属线路层电镀完成后即在金属基板上形成相应的基岛和引脚；Perform electroplating of the fifth metal circuit layer on the back of the metal substrate in step 28, and form corresponding base islands and pins on the metal substrate after the electroplating of the fifth metal circuit layer is completed;
步骤三十、贴光阻膜作业Step 30: Paste the photoresist film
在步骤二十九中金属基板正面贴上可进行曝光显影的光阻膜；In step 29, attach a photoresist film that can be exposed and developed on the front of the metal substrate;
步骤三十一、金属基板正面去除部分光阻膜Step 31. Remove part of the photoresist film from the front of the metal substrate
利用曝光显影设备将步骤三十完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行蚀刻的区域图形；Exposing, developing and removing part of the graphic photoresist film on the front of the metal substrate on which the photoresist film pasting operation has been completed in step 30 by using exposure and development equipment, so as to expose the pattern of the area on the front of the metal substrate that needs to be etched later;
步骤三十二、化学蚀刻Step thirty-two, chemical etching
将步骤三十一中金属基板正面完成曝光显影的区域进行化学蚀刻，化学蚀刻直至金属线路层为止；Perform chemical etching on the exposed and developed area of the front side of the metal substrate in step 31, until the metal circuit layer is chemically etched;
步骤三十三、贴光阻膜作业Step 33. Photoresist film pasting
在步骤三十二中完成化学蚀刻的金属基板正面贴上可进行曝光显影的光阻膜；Paste a photoresist film that can be exposed and developed on the front side of the metal substrate that has been chemically etched in step 32;
步骤三十四、金属基板正面去除部分光阻膜Step 34. Remove part of the photoresist film from the front of the metal substrate
利用曝光显影设备将步骤三十三完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行电镀的区域图形；Using exposure and development equipment, the front of the metal substrate that has completed the photoresist film pasting operation in step 33 is subjected to pattern exposure, development and removal of part of the pattern photoresist film, so as to expose the pattern of the area that needs to be electroplated on the front of the metal substrate;
步骤三十五、电镀金属柱子Step 35. Plating metal pillars
在步骤三十四中金属基板正面去除部分光阻膜的区域内电镀上金属柱子；Electroplate metal pillars in the area where part of the photoresist film is removed from the front of the metal substrate in step 34;
步骤三十六、去除光阻膜Step 36. Remove the photoresist film
去除金属基板表面的光阻膜；Remove the photoresist film on the surface of the metal substrate;
步骤三十七、涂覆粘结物质Step thirty-seven, apply the bonding substance
在完成步骤三十六的基岛正面涂覆导电或不导电粘结物质；Coating conductive or non-conductive bonding substances on the front side of the base island after step 36;
步骤三十八、装片Step thirty-eight, film loading
在步骤三十七的导电或不导电粘结物质上植入第一芯片；Implanting the first chip on the conductive or non-conductive adhesive substance in step 37;
步骤三十九、金属线键合Step 39. Metal wire bonding
在芯片正面与引脚正面之间进行键合金属线作业；Conduct bonding wire work between the front side of the chip and the front side of the pin;
步骤四十、包封Step 40, encapsulation
将步骤三十九中的金属基板正面采用环氧树脂(俗称塑封料)进行塑封；Plastic-seal the front of the metal substrate in step 39 with epoxy resin (commonly known as molding compound);
步骤四十一、环氧树脂表面研磨Step 41. Epoxy resin surface grinding
在完成步骤四十的环氧树脂塑封后进行环氧树脂表面研磨；Carry out epoxy resin surface grinding after finishing the epoxy resin molding of step 40;
步骤四十二、电镀抗氧化金属层或批覆抗氧化剂(OSP)Step forty-two, electroplating anti-oxidation metal layer or coating anti-oxidant (OSP)
在完成步骤四十一后的金属基板表面裸露在外的金属进行电镀抗氧化金属层或批覆抗氧化剂(OSP)。After step 41, the exposed metal on the surface of the metal substrate is electroplated with an anti-oxidation metal layer or coated with an antioxidant (OSP).
步骤四十三、倒装芯片Step 43, flip chip
在步骤四十二的基岛和引脚背面通过底部填充胶填满金属球与金属球之间以及芯片与基岛、芯片之间的空隙进行倒装第二芯片。In step 42, the base island and the back of the pins are filled with underfill glue in the gaps between the metal balls and between the chip and the base island and the chip to flip the second chip.
步骤四十四、包封Step 44. Encapsulation
将步骤四十三中的金属基板背面采用塑封料进行塑封。Plastic-encapsulate the back of the metal substrate in step forty-three with a plastic encapsulant.
步骤四十五、切割成品Step 45. Cut the finished product
将步骤四十四完成包封的半成品进行切割作业，制得先蚀后封三维系统级芯片倒装封装结构。Cutting the semi-finished product that has been encapsulated in step 44 to obtain a three-dimensional SoC flip-chip packaging structure that is etched first and then sealed.
所述步骤六到步骤十七可重复操作，形成更多层的金属线路层。The steps six to seventeen can be repeated to form more layers of metal circuit layers.
与现有技术相比，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
1、目前金属引线框或有机多层线路基板都无法埋入物件，从而限制了整个封装的功能集成度。而本发明的三维系统级金属线路基板，三维系统级金属线路基板可以在基板中间的夹层中再制作过程中埋入对象，从而实现在三维系统级金属线路基板基板的两侧装载芯片或其他组件，从而提升了整个封装的功能集成度；1. At present, metal lead frames or organic multilayer circuit substrates cannot be embedded in objects, which limits the functional integration of the entire package. In the 3D system-level metal circuit substrate of the present invention, the 3D system-level metal circuit substrate can embed objects in the interlayer in the middle of the substrate during the remanufacturing process, so that chips or other components can be loaded on both sides of the 3D system-level metal circuit substrate substrate , thereby improving the functional integration of the entire package;
2、三维系统级金属线路基板中的夹层在制作过程中可以因为导热或是散热需要而在需要的位置或是区域内埋入导热或是散热对象，从而改善整个封装结构的散热效果；2. The interlayer in the three-dimensional system-level metal circuit substrate can be embedded in the required position or area for heat conduction or heat dissipation during the production process, thereby improving the heat dissipation effect of the entire package structure;
3、三维系统级金属线路基板中的夹层在制作过程中可以因为系统与功能的需要而在需要的位置或是区域内埋入主动元件或是组件或是被动的组件，从而提高了基板的利用率；3. The interlayer in the three-dimensional system-level metal circuit substrate can embed active components or components or passive components in the required position or area due to the needs of the system and functions during the production process, thereby improving the utilization of the substrate Rate;
4、从三维系统级金属线路基板封装成品的外观完全看不出来基板内部夹层已埋入了因系统或是功能需要的对象，尤其是硅材的芯片的埋入连X光都无法检视，充分达到系统与功能的隐密性及保护性；4. From the appearance of the finished product of the 3D system-level metal circuit substrate package, it is completely impossible to see that the internal interlayer of the substrate has been embedded with objects required by the system or function, especially the embedding of silicon chips that cannot be inspected even by X-rays. To achieve the confidentiality and protection of the system and functions;
5、三维系统级金属线路基板封装整合的系统功能多，从而同样功能的元器件模块在PCB上所占用的空间就比较少，从而也就降低了成本。5. The three-dimensional system-level metal circuit substrate package integrates many system functions, so that the component modules with the same function occupy less space on the PCB, thereby reducing the cost.
6、三维系统级金属线路基板的夹层在制作过程中可以埋入高功率器件，与控制芯片分别装在基板两侧，从而可以避免高功率器件散热而干扰控制芯片的信号传输。6. The interlayer of the three-dimensional system-level metal circuit substrate can be embedded with high-power devices during the manufacturing process, and the control chip is installed on both sides of the substrate respectively, so as to avoid the heat dissipation of the high-power device and interfere with the signal transmission of the control chip.
7、三维系统级金属线路基板采用电镀方式制作线路，线宽线距可以达到15μm以下。7. The three-dimensional system-level metal circuit substrate adopts electroplating to make circuits, and the line width and line spacing can reach below 15 μm.
8、三维系统级金属线路基板采用电镀、蚀刻与塑封工艺制成，工艺简单，成本比有机基板低30%左右。8. The three-dimensional system-level metal circuit substrate is made by electroplating, etching and plastic packaging processes. The process is simple and the cost is about 30% lower than that of organic substrates.
附图说明Description of drawings
图1~图27为本发明先蚀后封三维系统级芯片倒装封装工艺方法的各工序示意图。1 to 27 are schematic diagrams of each process of the etching-first-sealing-then-seal three-dimensional system-on-chip flip-chip packaging process of the present invention.
图28为本发明先蚀后封三维系统级芯片倒装封装结构实施例1的示意图。FIG. 28 is a schematic diagram of Embodiment 1 of the three-dimensional system-on-a-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图29为本发明先蚀后封三维系统级芯片倒装封装结构实施例2的示意图。FIG. 29 is a schematic diagram of Embodiment 2 of the three-dimensional system-on-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图30为本发明先蚀后封三维系统级芯片倒装封装结构实施例3的示意图。FIG. 30 is a schematic diagram of Embodiment 3 of the three-dimensional system-on-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图31为本发明先蚀后封三维系统级芯片倒装封装结构实施例4的示意图。31 is a schematic diagram of Embodiment 4 of the three-dimensional system-on-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图32为本发明先蚀后封三维系统级芯片倒装封装结构实施例5的示意图。FIG. 32 is a schematic diagram of Embodiment 5 of the three-dimensional system-on-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图33~图77为本发明先蚀后封三维系统级芯片倒装封装结构实施例6的工艺流程图。33 to 77 are process flow charts of Embodiment 6 of the three-dimensional system-on-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图78为本发明先蚀后封三维系统级芯片倒装封装结构实施例6的示意图。FIG. 78 is a schematic diagram of Embodiment 6 of the three-dimensional system-in-chip flip-chip packaging structure of the present invention that is etched first and then sealed.
图79为传统四面无引脚金属引线框封装结构的示意图。FIG. 79 is a schematic diagram of a conventional four-sided leadless metal leadframe package structure.
图80为传统的有机多层线路基板封装结构的示意图。FIG. 80 is a schematic diagram of a conventional packaging structure of an organic multilayer circuit substrate.
其中：in:
基岛1base island 1
引脚2pin 2
导电或不导电粘结物质3Conductive or non-conductive bonding substances3
第一芯片4first chip 4
底部填充胶5Underfill 5
第二芯片6second chip 6
金属线7Metal wire 7
导电柱子8Conductive pillars 8
塑封料9Plastic compound 9
抗氧化层或批覆抗氧化剂10Antioxidant layer or coated antioxidant 10
无源器件11Passive Components 11
第三芯片12third chip 12
金属球13metal ball 13
静电释放圈14。Electrostatic discharge ring 14.
具体实施方式detailed description
本发明一种先蚀后封三维系统级芯片倒装封装结构及工艺方法如下：The structure and process method of a three-dimensional system-level chip flip-chip package that is etched first and then sealed are as follows:
实施例1、单层线路单芯片倒装单圈引脚Embodiment 1, single-layer circuit single-chip flip-chip single-turn pin
参见图28，为本发明先蚀后封三维系统级芯片倒装封装结构实施例1的结构示意图，它包括基岛1和引脚2，所述基岛1的正面通过导电或不导电粘结物质3正装有第一芯片4，在基岛1和引脚2的背面通过底部填充胶5倒装有第二芯片6，所述第一芯片4的正面与引脚2的正面之间用金属线7相连接，在所述引脚2正面设置有导电柱子8，所述基岛1外围的区域、基岛1和引脚2之间的区域、引脚2与引脚2之间的区域、基岛1和引脚2上部的区域、基岛1和引脚2下部的区域以及第一芯片4、第二芯片6、金属线7和导电柱子8外均包封有塑封料9，所述塑封料9与导电柱子8的顶部齐平，在所述导电柱子7露出塑封料9的表面镀有抗氧化层或批覆抗氧化剂(OSP)10。Referring to FIG. 28 , it is a structural schematic diagram of Embodiment 1 of an etch-before-seal three-dimensional system-on-a-chip flip-chip package structure of the present invention, which includes a base island 1 and pins 2, and the front side of the base island 1 is bonded by conductive or non-conductive The substance 3 is equipped with the first chip 4, and the second chip 6 is flip-mounted on the back of the base island 1 and the pin 2 through the underfill glue 5, and the front of the first chip 4 and the front of the pin 2 are covered with a metal Lines 7 are connected, and conductive pillars 8 are arranged on the front of the pin 2, the area around the base island 1, the area between the base island 1 and the pin 2, and the area between the pin 2 and the pin 2 , the area above the base island 1 and the pin 2, the area below the base island 1 and the pin 2, and the first chip 4, the second chip 6, the metal wire 7 and the conductive pillar 8 are all encapsulated with a plastic encapsulant 9, so The molding compound 9 is flush with the top of the conductive pillar 8 , and the surface of the conductive pillar 7 exposed from the molding compound 9 is plated with an anti-oxidation layer or coated with an antioxidant (OSP) 10 .
其工艺方法如下：Its process method is as follows:
步骤一、取金属基板Step 1. Take the metal substrate
参见图1，取一片厚度合适的金属基板，此板材使用的目的只是为线路制作与后续封装支撑线路层结构所使用的过渡性材料，此板材的材质主要是以金属材料为主,而金属材料的材质可以是铜材﹑铁材﹑镀锌材﹑不锈钢材﹑铝材或可以达到导电功能的金属物质或非全金属物质等。See Figure 1, take a piece of metal substrate with appropriate thickness. The purpose of this board is only a transitional material used for circuit production and subsequent packaging to support the circuit layer structure. The material of this board is mainly metal materials, and metal materials The material can be copper, iron, galvanized, stainless steel, aluminum or metal or non-all metal that can achieve conductive function.
步骤二、金属基板表面预镀微铜层Step 2. Pre-plating a micro-copper layer on the surface of the metal substrate
参见图2，在金属基板表面预镀微铜层，微铜层厚度在2~10微米,依据功能需要也可以减薄或是增厚,主要是为了后续线路制作时使线路层与金属基板能够紧密接合,电镀的方式可以采用化学沉积或是电解电镀。Referring to Figure 2, a micro-copper layer is pre-plated on the surface of the metal substrate. The thickness of the micro-copper layer is 2 to 10 microns. It can also be thinned or thickened according to functional requirements. Tight joint, electroplating method can adopt chemical deposition or electrolytic plating.
步骤三、贴光阻膜作业Step 3: Paste the photoresist film
参见图3，在完成预镀微铜层的金属基板正面及背面分别贴上可进行曝光显影的光阻膜，以保护后续的电镀金属层工艺作业，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to Figure 3, a photoresist film that can be exposed and developed is pasted on the front and back of the metal substrate that has been pre-plated with a micro-copper layer to protect the subsequent electroplating metal layer process. The photoresist film can be dry photoresist film or It may be a wet photoresist film.
步骤四、金属基板背面去除部分光阻膜Step 4. Remove part of the photoresist film on the back of the metal substrate
参见图4，利用曝光显影设备将步骤三完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形。Referring to Figure 4, use the exposure and development equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 3, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate.
步骤五、电镀金属线路层Step 5. Plating metal circuit layer
参见图5，在步骤四中金属基板背面去除部分光阻膜的区域内电镀上金属线路层，金属线路层材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金(通常5~20微米，可以根据不同应用选择不同的电镀材质，根据不同特性变换电镀的厚度)等材料，当然其它可以导电的金属物质都可以使用，并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料，电镀方式可以是化学沉积或是电解电镀方式。Referring to Fig. 5, a metal circuit layer is electroplated in the area where part of the photoresist film is removed on the back of the metal substrate in step 4. The material of the metal circuit layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold, nickel palladium gold (Usually 5~20 microns, different plating materials can be selected according to different applications, and the thickness of plating can be changed according to different characteristics) and other materials. Of course, other metal substances that can conduct electricity can be used, not limited to copper, aluminum, nickel, silver, For metal materials such as gold, copper silver, nickel gold, nickel palladium gold, etc., the electroplating method can be chemical deposition or electrolytic plating.
步骤六、贴光阻膜作业Step 6. Paste photoresist film
参见图6，在步骤五中金属基板背面贴上可进行曝光显影的光阻膜，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to FIG. 6 , in step five, a photoresist film capable of exposure and development is pasted on the back of the metal substrate. The photoresist film can be a dry photoresist film or a wet photoresist film.
步骤七、金属基板背面去除部分光阻膜Step 7. Remove part of the photoresist film on the back of the metal substrate
参见图7，利用曝光显影设备将步骤六完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形。Referring to FIG. 7 , use the exposure and developing equipment to expose, develop and remove part of the patterned photoresist film on the back of the metal substrate that has completed the photoresist film pasting operation in step 6, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate.
步骤八、电镀高导电金属线路层Step 8. Plating a highly conductive metal circuit layer
参见图8，在步骤七中金属基板背面去除部分光阻膜的区域内电镀高导电金属线路层，形成相应的基岛和引脚，高导电金属线路层的材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金等材料，当然其它可以导电的金属物质都可以使用，并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料，电镀方式可以使化学沉积或是电解电镀方式。Referring to Fig. 8, in step 7, a highly conductive metal circuit layer is electroplated in the area where part of the photoresist film is removed on the back of the metal substrate to form corresponding base islands and pins. The material of the highly conductive metal circuit layer can be copper, aluminum, nickel, Silver, gold, copper silver, nickel gold, nickel palladium gold and other materials, of course, other metal materials that can conduct electricity can be used, not limited to copper, aluminum, nickel, silver, gold, copper silver, nickel gold, nickel palladium gold, etc. For metal materials, the electroplating method can be chemical deposition or electrolytic plating.
步骤九、去除光阻膜Step 9. Remove the photoresist film
参见图9，去除金属基板表面的光阻膜，去除光阻膜的方法可采用化学药水软化并采用高压水冲洗的方式去除光阻膜。Referring to FIG. 9 , the photoresist film on the surface of the metal substrate is removed. The method of removing the photoresist film can be softened with chemical potions and washed with high-pressure water to remove the photoresist film.
步骤十、环氧树脂塑封Step 10. Epoxy resin plastic sealing
参见图10，在金属基板背面的金属线路层和高导电金属线路层表面利用环氧树脂材料进行塑封保护，环氧树脂材料可以依据产品特性选择有填料或是没有填料的种类，塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式、贴膜方式或是刷胶的方式。Referring to Figure 10, the metal circuit layer on the back of the metal substrate and the surface of the highly conductive metal circuit layer are protected by plastic sealing with epoxy resin materials. The type of epoxy resin material can be selected with or without filler according to product characteristics. The plastic sealing method can be adopted Mold filling method, spraying equipment spraying method, film pasting method or glue brushing method.
步骤十一、环氧树脂表面研磨Step 11. Epoxy resin surface grinding
参见图11，在完成环氧树脂塑封后进行环氧树脂表面研磨,目的是使外脚功能用的高导电金属线路层露出塑封体表面以及控制环氧树脂的厚度。Referring to Figure 11, after the epoxy resin molding is completed, the surface of the epoxy resin is ground, the purpose is to expose the highly conductive metal circuit layer for the outer leg function to the surface of the plastic package and to control the thickness of the epoxy resin.
步骤十二、贴光阻膜作业Step 12. Paste photoresist film
参见图12，在完成步骤十一的金属基板正面和背面贴上可进行曝光显影的光阻膜，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to FIG. 12 , a photoresist film capable of exposure and development is pasted on the front and back of the metal substrate after step eleven. The photoresist film can be a dry photoresist film or a wet photoresist film.
步骤十三、金属基板正面去除部分光阻膜Step 13. Remove part of the photoresist film from the front of the metal substrate
参见图13，利用曝光显影设备将步骤十二完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行蚀刻的区域图形。Referring to FIG. 13 , use the exposure and developing equipment to expose, develop and remove part of the patterned photoresist film on the front of the metal substrate after the photoresist film pasting operation in step 12, so as to expose the pattern of the area on the front of the metal substrate that needs to be etched later.
步骤十四、化学蚀刻Step 14. Chemical etching
参见图14，将步骤十三中金属基板正面完成曝光显影的区域进行化学蚀刻，化学蚀刻直至金属线路层为止，蚀刻药水可以采用氯化铜或是氯化铁或是可以进行化学蚀刻的药水。Referring to FIG. 14 , perform chemical etching on the exposed and developed area of the front side of the metal substrate in step 13, until the metal circuit layer is chemically etched. The etching solution can be copper chloride or ferric chloride or a chemical etching solution.
步骤十五、贴光阻膜作业Step 15. Paste photoresist film
参见图15，在完成步骤十四的金属基板正面和背面贴上可进行曝光显影的光阻膜，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to FIG. 15 , a photoresist film capable of exposure and development is pasted on the front and back of the metal substrate after step 14, and the photoresist film can be a dry photoresist film or a wet photoresist film.
步骤十六、金属基板正面去除部分光阻膜Step 16. Remove part of the photoresist film from the front of the metal substrate
参见图16，利用曝光显影设备将步骤十五完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行电镀的区域图形。Referring to FIG. 16 , use the exposure and developing equipment to expose, develop and remove part of the graphic photoresist film on the front of the metal substrate that has completed the photoresist film pasting operation in step 15, so as to expose the pattern of the area that needs to be electroplated on the front of the metal substrate.
步骤十七、电镀金属柱子Step seventeen, electroplating metal pillars
参见图17，在步骤十六中金属基板正面去除部分光阻膜的区域内电镀上金属柱子，金属柱子的材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金等材料，当然其它可以导电的金属物质都可以使用，并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料，电镀方式可以是化学沉积或是电解电镀方式。Referring to Figure 17, metal pillars are electroplated in the area where part of the photoresist film is removed from the front of the metal substrate in step sixteen. The materials of the metal pillars can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold, nickel palladium gold And other materials, of course, other conductive metal substances can be used, not limited to copper, aluminum, nickel, silver, gold, copper silver, nickel gold, nickel palladium gold and other metal materials, the electroplating method can be chemical deposition or electrolytic plating Way.
步骤十八、去除光阻膜Step 18. Remove the photoresist film
参见图18，去除金属基板表面的光阻膜，去除光阻膜的方法可采用化学药水软化并采用高压水冲洗的方式去除光阻膜。Referring to FIG. 18 , the photoresist film on the surface of the metal substrate is removed. The method of removing the photoresist film can be softened with chemical potions and washed with high-pressure water to remove the photoresist film.
步骤十九、涂覆粘结物质Step 19. Apply the bonding substance
参见图19，在步骤十八的基岛正面涂覆导电或不导电粘结物质，目的是为后续芯片植入后与基岛的接合。Referring to FIG. 19 , a conductive or non-conductive adhesive substance is coated on the front of the base island in step 18 for the purpose of bonding with the base island after chip implantation.
步骤二十、装片Step 20, Load film
参见图20，在步骤十九的导电或不导电粘结物质上植入第一芯片。Referring to FIG. 20 , the first chip is implanted on the conductive or non-conductive adhesive substance in step nineteen.
步骤二十一、金属线键合Step 21. Metal wire bonding
参见图21，在第一芯片正面与引脚正面之间进行键合金属线作业，所述金属线的材料采用金、银、铜、铝或是合金的材料，金属丝的形状可以是丝状也可以是带状。Referring to Fig. 21, the metal wire bonding operation is carried out between the front side of the first chip and the front side of the pin, the material of the metal wire is made of gold, silver, copper, aluminum or an alloy material, and the shape of the metal wire can be wire-like Can also be ribbon.
步骤二十二、包封Step 22. Encapsulation
参见图22，将步骤二十一中的金属基板正面采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是用贴膜方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。Referring to Figure 22, the front side of the metal substrate in step 21 is plastic-sealed with a plastic sealing compound. The plastic sealing method can be mold filling, spraying equipment spraying or film sticking. The plastic sealing compound can be filled with fillers or Epoxy resin without filler substances.
步骤二十三、环氧树脂表面研磨Step 23. Epoxy resin surface grinding
参见图23，在完成步骤二十二的环氧树脂塑封后进行环氧树脂表面研磨,目的是使金属柱子露出塑封体表面以及控制环氧树脂的厚度。Referring to FIG. 23 , after completing the epoxy resin molding in step 22, perform surface grinding of the epoxy resin in order to expose the metal pillars to the surface of the plastic package and control the thickness of the epoxy resin.
步骤二十四、电镀抗氧化金属层或是被覆抗氧化剂(OSP)Step 24, electroplating an anti-oxidation metal layer or coating anti-oxidant (OSP)
参见图24，在完成步骤二十三后的金属基板表面裸露在外的金属进行电镀抗氧化金属层，防止金属氧化，如金、镍金、镍钯金、锡或是被覆抗氧化剂(OSP)。Referring to FIG. 24, the exposed metal on the surface of the metal substrate after step 23 is electroplated with an anti-oxidation metal layer to prevent metal oxidation, such as gold, nickel gold, nickel palladium gold, tin or coating antioxidant (OSP).
步骤二十五、装片Step twenty-five, loading film
参见图25，在步骤二十四的基岛和引脚背面通过底部填充胶填满金属球与金属球之间以及芯片与基岛、基岛之间的空隙后倒装第二芯片，倒装的方式可以将底部填充胶涂覆在基岛和引脚上再倒装上第二芯片或是将底部充胶涂覆在第二芯片正面后倒装于基岛和引脚背面。Referring to Figure 25, after the base island and the back of the pins are filled with underfill glue in step 24, the gap between the metal ball and the metal ball and between the chip and the base island and the base island is flipped and the second chip is flipped. The method can be to apply the underfill glue on the base island and the pins and then flip-chip the second chip, or apply the underfill glue on the front side of the second chip and then flip-chip it on the base island and the back of the pins.
步骤二十六、包封Step 26. Encapsulation
参见图26，将步骤二十五中的金属基板背面采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是用贴膜方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。Referring to Figure 26, the back of the metal substrate in step 25 is plastic-sealed with a plastic sealing compound. The plastic sealing method can be mold filling, spraying equipment spraying or film-sticking. The plastic sealing compound can be filled with fillers or Epoxy resin without filler substances.
步骤二十七、切割成品Step 27. Cut the finished product
参见图27，将步骤二十六完成包封的半成品进行切割作业，使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来，制得先蚀后封三维系统级芯片倒装封装结构，可采用常规的钻石刀片以及常规的切割设备即可。Referring to Figure 27, the semi-finished products that have been encapsulated in step 26 are cut, so that the plastic package modules that are originally integrated in the form of an array assembly and contain chips are cut and separated one by one, and the etching before sealing is obtained. For the three-dimensional SoC flip-chip package structure, conventional diamond blades and conventional cutting equipment can be used.
实施例2、多圈单芯片倒装+无源器件+静电释放圈Embodiment 2, multi-turn single-chip flip chip + passive device + electrostatic discharge ring
参见图29，为本发明先蚀后封三维系统级芯片倒装封装结构实施例2的结构示意图，实施例2与实施例1的不同之处在于：所述导电柱子8有多圈，所述引脚2与引脚2之间通过导电粘结物质跨接无源器件11，在所述基岛1与引脚2之间设置有静电释放圈14，所述无源器件11可以跨接于引脚2背面与引脚2正面之间，或跨接于引脚2背面与静电释放圈14背面之间，或跨接于基岛1背面与静电释放圈14背面之间。Referring to FIG. 29 , it is a schematic structural view of Embodiment 2 of the three-dimensional system-on-a-chip flip-chip packaging structure of the present invention. The difference between Embodiment 2 and Embodiment 1 is that the conductive pillar 8 has multiple turns, and the The passive device 11 is bridged between the pin 2 and the pin 2 through a conductive adhesive substance, and an electrostatic discharge ring 14 is arranged between the base island 1 and the pin 2, and the passive device 11 can be bridged to the Between the back of the pin 2 and the front of the pin 2, or between the back of the pin 2 and the back of the ESD ring 14, or between the back of the base island 1 and the back of the ESD ring 14.
实施例3、单圈多基岛平铺多芯片倒装Embodiment 3, single-turn multi-base island tiling multi-chip flip chip
参见图30，为本发明先蚀后封三维系统级芯片倒装封装结构实施例3的结构示意图，实施例3与实施例1的不同之处在于：在所述基岛1和引脚2的背面通过底部填充胶5倒装有多个第二芯片6。Referring to FIG. 30 , it is a structural schematic diagram of Embodiment 3 of the three-dimensional system-in-a-chip flip-chip package structure of the present invention that is etched first and then sealed. The difference between Embodiment 3 and Embodiment 1 lies in that: in the A plurality of second chips 6 are flip-chip mounted on the back side through the underfill glue 5 .
实施例4、单圈堆叠多芯片倒正装Embodiment 4, single-turn stacking multi-chip upside-down packaging
参见图31，为本发明先蚀后封三维系统级芯片倒装封装结构实施例4的结构示意图，实施例4与实施例1的不同之处在于：在所述第二芯片6背面通过导电或不导电粘结物质3设置有第三芯片12，所述第三芯片12正面与引脚2之间通过金属线7相连。Referring to FIG. 31 , it is a schematic structural view of Embodiment 4 of the three-dimensional system-on-a-chip flip-chip packaging structure of the present invention, which is etched first and then sealed. The non-conductive adhesive substance 3 is provided with a third chip 12 , and the front side of the third chip 12 is connected to the pin 2 through the metal wire 7 .
实施例5、单圈堆叠多芯片倒倒装Embodiment 5, single-turn stacking multi-chip flip-chip
参见图32，为本发明先蚀后封三维系统级芯片倒装封装结构实施例5的结构示意图，实施例5与实施例1的不同之处在于：在所述引脚2背面设置有金属球13，在所述金属球13上倒装有第三芯片12，所述金属球13和第三芯片12处于塑封料9的内部。Referring to FIG. 32 , it is a structural schematic diagram of Embodiment 5 of the three-dimensional system-on-a-chip flip-chip packaging structure that is etched first and then sealed in accordance with the present invention. The difference between Embodiment 5 and Embodiment 1 is that a metal ball is arranged on the back of the pin 2 13 , the third chip 12 is flipped on the metal ball 13 , and the metal ball 13 and the third chip 12 are inside the molding compound 9 .
实施例6、多层线路单芯片倒装单圈引脚Embodiment 6, multi-layer circuit single-chip flip-chip single-turn pin
参见图78，为本发明先蚀后封三维系统级芯片倒装封装结构实施例7的结构示意图，实施例7与实施例1的不同之处在于：所述基岛1或引脚2包括多层金属线路层，相邻两层金属线路层之间通过导电柱子相连接，所述基岛1的正面和背面分别通过导电或不导电粘结物质3设置有第一芯片4和第二芯片5，在所述引脚2背面设置有导电柱子7。Referring to FIG. 78 , it is a structural schematic diagram of Embodiment 7 of the three-dimensional system-on-a-chip flip-chip package structure of the present invention that is etched first and then sealed. The difference between Embodiment 7 and Embodiment 1 is that the base island 1 or pin 2 includes multiple Two adjacent metal circuit layers are connected by conductive pillars, and the front and back of the base island 1 are respectively provided with a first chip 4 and a second chip 5 through conductive or non-conductive bonding substances 3 , a conductive pillar 7 is arranged on the back of the pin 2 .
其工艺方法如下：Its process method is as follows:
步骤一、取金属基板Step 1. Take the metal substrate
参见图33，取一片厚度合适的金属基板，此板材使用的目的只是为线路制作与后续封装支撑线路层结构所使用的过渡性材料，此板材的材质主要是以金属材料为主,而金属材料的材质可以是铜材﹑铁材﹑镀锌材﹑不锈钢材﹑铝材或可以达到导电功能的金属物质或非金属物质等。See Figure 33, take a piece of metal substrate with appropriate thickness. The purpose of this board is only to be used as a transitional material for circuit production and subsequent packaging to support the circuit layer structure. The material of this board is mainly metal materials, and metal materials The material can be copper, iron, galvanized, stainless steel, aluminum or metal or non-metal that can achieve conductive function.
步骤二、金属基板表面预镀微铜层Step 2. Pre-plating a micro-copper layer on the surface of the metal substrate
参见图34，在金属基板表面预镀微铜层，微铜层厚度在2~10微米,依据功能需要也可以减薄或是增厚,主要是为了后续线路制作时使线路层与金属基板能够紧密接合,电镀的方式可以采用化学沉积或是电解电镀。Referring to Figure 34, a micro-copper layer is pre-plated on the surface of the metal substrate. The thickness of the micro-copper layer is 2 to 10 microns. It can also be thinned or thickened according to functional requirements. Tight joint, electroplating method can adopt chemical deposition or electrolytic plating.
步骤三、贴光阻膜作业Step 3: Paste the photoresist film
参见图35，在完成预镀微铜层的金属基板正面及背面分别贴上可进行曝光显影的光阻膜，以保护后续的电镀金属层工艺作业，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to Figure 35, a photoresist film that can be exposed and developed is pasted on the front and back of the metal substrate that has been pre-plated with a micro-copper layer to protect the subsequent electroplating metal layer process. The photoresist film can be dry photoresist film or It may be a wet photoresist film.
步骤四、金属基板背面去除部分光阻膜Step 4. Remove part of the photoresist film on the back of the metal substrate
参见图36，利用曝光显影设备将步骤三完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形。Referring to Figure 36, use the exposure and developing equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate after the photoresist film pasting operation in step 3, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.
步骤五、电镀第一金属线路层Step 5. Electroplating the first metal circuit layer
参见图37，在步骤四中金属基板背面去除部分光阻膜的区域内电镀上第一金属线路层，第一金属线路层材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金(通常5~20微米，可以根据不同应用选择不同的电镀材质，根据不同特性变换电镀的厚度)等材料，当然其它可以导电的金属物质都可以使用，并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料，电镀方式可以是化学沉积或是电解电镀方式。Referring to Figure 37, the first metal circuit layer is electroplated in the area where part of the photoresist film is removed on the back of the metal substrate in step 4. The material of the first metal circuit layer can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold , nickel, palladium, gold (usually 5~20 microns, different plating materials can be selected according to different applications, and the thickness of the plating can be changed according to different characteristics) and other materials. Of course, other metal substances that can conduct electricity can be used, not limited to copper, aluminum, For metal materials such as nickel, silver, gold, copper silver, nickel gold, nickel palladium gold, etc., the electroplating method can be chemical deposition or electrolytic plating.
步骤六、贴光阻膜作业Step 6. Paste photoresist film
参见图38，在步骤五中金属基板背面贴上可进行曝光显影的光阻膜，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to FIG. 38 , in step five, a photoresist film capable of exposure and development is pasted on the back of the metal substrate. The photoresist film can be a dry photoresist film or a wet photoresist film.
步骤七、金属基板背面去除部分光阻膜Step 7. Remove part of the photoresist film on the back of the metal substrate
参见图39，利用曝光显影设备将步骤六完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形。Referring to FIG. 39 , use the exposure and developing equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate after the step 6 of pasting the photoresist film, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.
步骤八、电镀第二金属线路层Step 8. Electroplating the second metal circuit layer
参见图40，在步骤七中金属基板背面去除部分光阻膜的区域内电镀上第二金属线路层作为用以连接第一金属线路层与第三金属线路层的导电柱子，金属线路层的材质可采用铜、镍金、镍钯金、银、金或是锡金属，电镀方式可以使化学沉积或是电解电镀方式。Referring to Figure 40, in step 7, the second metal circuit layer is electroplated in the area where part of the photoresist film is removed on the back of the metal substrate as a conductive pillar for connecting the first metal circuit layer and the third metal circuit layer. The material of the metal circuit layer Copper, nickel gold, nickel palladium gold, silver, gold or tin metal can be used, and the electroplating method can be chemical deposition or electrolytic plating.
步骤九、去除光阻膜Step 9. Remove the photoresist film
参见图41，去除金属基板表面的光阻膜，目的是为后续进行不导电胶膜作业，去除光阻膜的方法可采用化学药水软化并采用高压水冲洗的方式去除光阻膜。See Figure 41. The purpose of removing the photoresist film on the surface of the metal substrate is for the subsequent non-conductive film operation. The method of removing the photoresist film can be softened with chemical medicine and washed with high-pressure water to remove the photoresist film.
步骤十、贴压不导电胶膜作业Step 10. Paste and press the non-conductive film
参见图42，在金属基板背面（有线路层的区域）贴压一层不导电胶膜，目的是要为第一金属线路层与第三金属线路层进行绝缘，贴压不导电胶膜的方式可以采用常规的滚压设备,或在真空的环境下进行贴压，以防止贴压过程产生空气的残留，不导电胶膜主要是热固型环氧树脂，而环氧树脂可以依据产品特性采用没有填料或是有填料的不导电胶膜，环氧树脂的颜色可以依据产品特性进行染色处理。Referring to Figure 42, a layer of non-conductive adhesive film is pasted on the back of the metal substrate (the area with the circuit layer), the purpose is to insulate the first metal circuit layer and the third metal circuit layer, and the method of pasting and pressing the non-conductive film Conventional rolling equipment can be used, or it can be pasted in a vacuum environment to prevent air residues during the pasting process. The non-conductive adhesive film is mainly thermosetting epoxy resin, and epoxy resin can be used according to product characteristics. Non-conductive adhesive film without filler or with filler, the color of epoxy resin can be dyed according to product characteristics.
步骤十一、研磨不导电胶膜表面Step 11. Grinding the surface of the non-conductive film
参见图43，在完成不导电胶膜贴压后进行表面研磨,目的是要露出第二金属线路层，维持不导电胶膜与第二金属线路层的平整度以及控制不导电胶膜的厚度。Referring to Figure 43, surface grinding is carried out after the non-conductive adhesive film is pressed, the purpose is to expose the second metal circuit layer, maintain the flatness of the non-conductive adhesive film and the second metal circuit layer, and control the thickness of the non-conductive adhesive film.
步骤十二、不导电胶膜表面金属化预处理Step 12. Metallization pretreatment on the surface of the non-conductive film
参见图44，对不导电胶膜表面进行金属化预处理，使其表面附着上一层金属化高分子材料，目的是作为后续金属材料能够镀上去的触媒转换，附着金属化高分子材料可以采用喷涂、等离子震荡、表面粗化等再行烘干即可；Referring to Figure 44, metallization pretreatment is performed on the surface of the non-conductive adhesive film, so that a layer of metallized polymer material is attached to the surface. Spraying, plasma shock, surface roughening, etc. and then drying;
步骤十三、贴光阻膜作业Step 13. Paste photoresist film
参见图45，在步骤十二中金属基板正面和背面贴上可进行曝光显影的光阻膜，以保护后续的第三金属线路层的电镀工艺作业，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to Figure 45, in step 12, a photoresist film that can be exposed and developed is pasted on the front and back of the metal substrate to protect the subsequent electroplating process of the third metal circuit layer. The photoresist film can be a dry photoresist film or It may be a wet photoresist film.
步骤十四、金属基板背面去除部分光阻膜Step 14. Remove part of the photoresist film on the back of the metal substrate
参见图46，利用曝光显影设备将步骤十三完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行蚀刻的区域图形。Referring to FIG. 46 , use the exposure and developing equipment to expose, develop and remove part of the graphic photoresist film on the back of the metal substrate after the photoresist film pasting operation in step 13, so as to expose the pattern of the area on the back of the metal substrate that needs to be etched later.
步骤十五、蚀刻作业Step 15. Etching
参见图47，在步骤十四完成光阻膜开窗后的区域进行蚀刻作业，其目的是将要保留的金属线路以外的金属区域腐蚀干净，进行蚀刻的方法可以是氯化铜或是氯化铁或是可以进行化学蚀刻的药水的工艺方式。Referring to Figure 47, the etching operation is carried out in the area after the window opening of the photoresist film is completed in step 14. The purpose is to etch the metal area other than the metal circuit to be retained. The etching method can be copper chloride or ferric chloride Or the crafting method of potions that can be chemically etched.
步骤十六、金属基板背面去除光阻膜Step 16. Remove the photoresist film on the back of the metal substrate
参见图48，去除金属基板背面的光阻膜，以露出后续需要进行被电镀的金属区域图形。Referring to FIG. 48 , the photoresist film on the back of the metal substrate is removed to expose the pattern of the metal region to be subsequently electroplated.
步骤十七、电镀第三金属线路层Step seventeen, electroplating the third metal circuit layer
参见图49，在步骤十六的金属基板背面进行第三金属线路层的电镀工作，第三金属线路层的材质可以是铜、镍金、镍钯金、银、金或是锡金属，电镀方式可以是化学沉积加电解电镀或是全部使用化学沉积方式镀出需要的厚度。Referring to Figure 49, the electroplating of the third metal circuit layer is performed on the back of the metal substrate in step sixteen. The material of the third metal circuit layer can be copper, nickel gold, nickel palladium gold, silver, gold or tin metal. The electroplating method It can be chemical deposition plus electrolytic plating or all use of chemical deposition to plate out the required thickness.
步骤十八、贴光阻膜作业Step 18. Paste photoresist film
参见图50，在步骤十七的金属基板背面贴上可进行曝光显影的光阻膜，目的是为后续金属线路层的制作，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to Figure 50, paste a photoresist film that can be exposed and developed on the back of the metal substrate in step 17, for the purpose of making the subsequent metal circuit layer. The photoresist film can be a dry photoresist film or a wet photoresist film .
步骤十九、金属基板背面去除部分光阻膜Step 19. Remove part of the photoresist film on the back of the metal substrate
参见图51，利用曝光显影设备将步骤十八完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行电镀的区域图形。Referring to FIG. 51 , use the exposure and developing equipment to expose, develop and remove part of the patterned photoresist film on the back of the metal substrate after the photoresist film pasting operation in step 18, so as to expose the area pattern that needs to be electroplated on the back of the metal substrate.
步骤二十、电镀第四金属线路层Step 20, electroplating the fourth metal circuit layer
参见图52，在步骤十九中金属基板背面去除部分光阻膜的区域内电镀上第四金属线路层作为用以连接第三金属线路层与第五金属线路层的导电柱子，金属线路层的材质可采用铜、镍金、镍钯金、银、金或是锡金属，电镀方式可以使化学沉积或是电解电镀方式。Referring to FIG. 52, in the area where part of the photoresist film is removed from the back of the metal substrate in step nineteen, the fourth metal circuit layer is electroplated as a conductive pillar for connecting the third metal circuit layer and the fifth metal circuit layer, and the metal circuit layer The material can be copper, nickel gold, nickel palladium gold, silver, gold or tin metal, and the electroplating method can be chemical deposition or electrolytic plating.
步骤二十一、去除光阻膜Step 21. Remove the photoresist film
参见图53，去除金属基板表面的光阻膜，目的是为后续进行不导电胶膜作业，去除光阻膜的方法可采用化学药水软化并采用高压水冲洗的方式去除光阻膜。Referring to Figure 53, the purpose of removing the photoresist film on the surface of the metal substrate is for the subsequent non-conductive film operation. The method of removing the photoresist film can be softened with chemical medicine and washed with high-pressure water to remove the photoresist film.
步骤二十二、贴压不导电胶膜作业Step 22. Paste and press the non-conductive film
参见图54，在金属基板背面（有线路层的区域）贴压一层不导电胶膜，目的是要为第三金属线路层与第五金属线路层进行绝缘，贴压不导电胶膜的方式可以采用常规的滚压设备,或在真空的环境下进行贴压，以防止贴压过程产生空气的残留，不导电胶膜主要是热固型环氧树脂，而环氧树脂可以依据产品特性采用没有填料或是有填料的不导电胶膜，环氧树脂的颜色可以依据产品特性进行染色处理。Referring to Figure 54, a layer of non-conductive adhesive film is pasted on the back of the metal substrate (the area with the circuit layer), the purpose is to insulate the third metal circuit layer and the fifth metal circuit layer, and the method of pasting and pressing the non-conductive film Conventional rolling equipment can be used, or it can be pasted in a vacuum environment to prevent air residues during the pasting process. The non-conductive adhesive film is mainly thermosetting epoxy resin, and epoxy resin can be used according to product characteristics. Non-conductive adhesive film without filler or with filler, the color of epoxy resin can be dyed according to product characteristics.
步骤二十三、研磨不导电胶膜表面Step 23. Grinding the surface of the non-conductive film
参见图55，在完成不导电胶膜贴压后进行表面研磨,目的是要露出第四金属线路层，维持不导电胶膜与第四金属线路层的平整度以及控制不导电胶膜的厚度。Referring to Figure 55, surface grinding is carried out after the non-conductive adhesive film is pressed, the purpose is to expose the fourth metal circuit layer, maintain the flatness of the non-conductive adhesive film and the fourth metal circuit layer, and control the thickness of the non-conductive adhesive film.
步骤二十四、不导电胶膜表面金属化预处理Step 24. Metallization pretreatment on the surface of the non-conductive film
参见图56，对不导电胶膜表面进行金属化预处理，使其表面附着上一层金属化高分子材料，目的是作为后续金属材料能够镀上去的触媒转换，附着金属化高分子材料可以采用喷涂、等离子震荡、表面粗化等再行烘干即可；Referring to Figure 56, metallization pretreatment is carried out on the surface of the non-conductive adhesive film, so that a layer of metallized polymer material is attached to the surface. The purpose is to serve as a catalytic conversion for subsequent metal materials to be plated on. Spraying, plasma shock, surface roughening, etc. and then drying;
步骤二十五、贴光阻膜作业Step 25. Paste the photoresist film
参见图57，在步骤二十四中金属基板正面和背面贴上可进行曝光显影的光阻膜，以保护后续的第五金属线路层的电镀工艺作业，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to Figure 57, in step 24, a photoresist film that can be exposed and developed is pasted on the front and back of the metal substrate to protect the subsequent electroplating process of the fifth metal circuit layer. The photoresist film can be a dry photoresist film It can also be a wet photoresist film.
步骤二十六、金属基板背面去除部分光阻膜Step 26. Remove part of the photoresist film on the back of the metal substrate
参见图58，利用曝光显影设备将步骤二十五完成贴光阻膜作业的金属基板背面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板背面后续需要进行蚀刻的区域图形。Referring to FIG. 58 , use the exposure and development equipment to expose, develop and remove part of the patterned photoresist film on the back of the metal substrate after the photoresist film pasting operation in step 25, so as to expose the pattern of the area on the back of the metal substrate that needs to be etched later.
步骤二十七、蚀刻作业Step 27. Etching
参见图59，在步骤二十六完成光阻膜开窗后的区域进行蚀刻作业，其目的是将要保留的金属线路以外的金属区域腐蚀干净，进行蚀刻的方法可以是氯化铜或是氯化铁或是可以进行化学蚀刻的药水的工艺方式。Referring to Figure 59, the etching operation is carried out in the area after the window opening of the photoresist film is completed in step 26. The purpose is to etch the metal area other than the metal circuit to be retained. The etching method can be copper chloride or chloride Crafting methods of iron or potions that chemically etch.
步骤二十八、金属基板背面去除光阻膜Step 28, remove the photoresist film on the back of the metal substrate
参见图60，去除金属基板背面的光阻膜，以露出后续需要进行被电镀的金属区域图形。Referring to FIG. 60 , the photoresist film on the back of the metal substrate is removed to expose the pattern of the metal region to be subsequently electroplated.
步骤二十九、电镀第五金属线路层Step 29, electroplating the fifth metal circuit layer
参见图61，在步骤二十八的金属基板背面进行第五金属线路层的电镀工作，第五金属线路层电镀完成后即在金属基板上形成相应的基岛和引脚，第五金属线路层的材质可以是铜、镍金、镍钯金、银、金或是锡金属，电镀方式可以是化学沉积加电解电镀或是全部使用化学沉积方式镀出需要的厚度。Referring to FIG. 61 , the electroplating of the fifth metal circuit layer is performed on the back of the metal substrate in step 28. After the electroplating of the fifth metal circuit layer is completed, corresponding base islands and pins are formed on the metal substrate. The fifth metal circuit layer The material can be copper, nickel gold, nickel palladium gold, silver, gold or tin metal, and the electroplating method can be electroless deposition plus electrolytic electroplating or all electroless deposition methods are used to plate out the required thickness.
步骤三十、贴光阻膜作业Step 30: Paste the photoresist film
参见图62，在步骤二十九中金属基板正面贴上可进行曝光显影的光阻膜，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to FIG. 62 , in step 29, a photoresist film capable of exposure and development is pasted on the front of the metal substrate. The photoresist film can be a dry photoresist film or a wet photoresist film.
步骤三十一、金属基板正面去除部分光阻膜Step 31. Remove part of the photoresist film from the front of the metal substrate
参见图63，利用曝光显影设备将步骤三十完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行蚀刻的区域图形。Referring to FIG. 63 , use the exposure and development equipment to expose, develop and remove part of the graphic photoresist film on the front of the metal substrate after the photoresist film pasting operation in step 30, so as to expose the pattern of the area on the front of the metal substrate that needs to be etched later.
步骤三十二、化学蚀刻Step thirty-two, chemical etching
参见图64，将步骤三十一中金属基板正面完成曝光显影的区域进行化学蚀刻，化学蚀刻直至金属线路层为止，蚀刻药水可以采用氯化铜或是氯化铁或是可以进行化学蚀刻的药水。Referring to Fig. 64, perform chemical etching on the exposed and developed area of the front side of the metal substrate in step 31 until the metal circuit layer is chemically etched. The etching solution can be copper chloride or ferric chloride or a chemical etching solution. .
步骤三十三、贴光阻膜作业Step 33. Photoresist film pasting
参见图65，在步骤三十二中完成化学蚀刻的金属基板正面贴上可进行曝光显影的光阻膜，光阻膜可以是干式光阻膜也可以是湿式光阻膜。Referring to FIG. 65 , a photoresist film that can be exposed and developed is pasted on the front of the metal substrate that has been chemically etched in step 32. The photoresist film can be a dry photoresist film or a wet photoresist film.
步骤三十四、金属基板正面去除部分光阻膜Step 34. Remove part of the photoresist film from the front of the metal substrate
参见图66，利用曝光显影设备将步骤三十三完成贴光阻膜作业的金属基板正面进行图形曝光、显影与去除部分图形光阻膜，以露出金属基板正面后续需要进行电镀的区域图形。Referring to FIG. 66 , use the exposure and developing equipment to expose, develop and remove part of the patterned photoresist film on the front of the metal substrate after the photoresist film pasting operation in step 33, so as to expose the pattern of the area on the front of the metal substrate that needs to be electroplated.
步骤三十五、电镀金属柱子Step 35. Plating metal pillars
参见图67，在步骤三十四中金属基板正面去除部分光阻膜的区域内电镀上金属柱子，金属柱子的材料可以是铜、铝、镍、银、金、铜银、镍金、镍钯金等材料，当然其它可以导电的金属物质都可以使用，并不局限铜、铝、镍、银、金、铜银、镍金、镍钯金等金属材料，电镀方式可以使化学沉积或是电解电镀方式。Referring to Fig. 67, metal pillars are electroplated in the area where part of the photoresist film is removed from the front of the metal substrate in step 34, and the materials of the metal pillars can be copper, aluminum, nickel, silver, gold, copper silver, nickel gold, nickel palladium Gold and other materials, of course, other metal substances that can conduct electricity can be used, not limited to copper, aluminum, nickel, silver, gold, copper silver, nickel gold, nickel palladium gold and other metal materials, the electroplating method can make chemical deposition or electrolysis Plating method.
步骤三十六、去除光阻膜Step 36. Remove the photoresist film
参见图68，去除金属基板表面的光阻膜，可采用化学药水软化并采用高压水喷除的方式去除光阻膜。Referring to Fig. 68, to remove the photoresist film on the surface of the metal substrate, the photoresist film can be removed by softening with chemical potion and spraying with high-pressure water.
步骤三十七、涂覆粘结物质Step thirty-seven, apply the bonding substance
参见图69，在步骤二十九形成的基岛正面涂覆导电或是不导电的粘结物质，目的是为后续芯片植入后与基岛的接合。Referring to FIG. 69 , the front surface of the base island formed in step 29 is coated with a conductive or non-conductive adhesive substance for the purpose of bonding with the base island after subsequent chip implantation.
步骤三十八、装片Step thirty-eight, film loading
参见图70，在步骤三十七的基岛正面植入第一芯片。Referring to FIG. 70 , the first chip is implanted on the front side of the base island in step thirty-seven.
步骤三十九、金属线键合Step 39. Metal wire bonding
参见图71，在第一芯片正面与引脚正面之间进行键合金属线作业，所述金属线的材料采用金、银、铜、铝或是合金的材料，金属丝的形状可以是丝状也可以是带状。Referring to Fig. 71, the metal wire bonding operation is performed between the front side of the first chip and the front side of the pin, the material of the metal wire is made of gold, silver, copper, aluminum or an alloy material, and the shape of the metal wire can be filamentary Can also be ribbon.
步骤四十、包封Step 40, encapsulation
参见图72，将步骤三十九中的金属基板正面采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式、用贴膜方式或是刷胶的方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。Referring to Figure 72, the front of the metal substrate in step 39 is plastic-sealed with a plastic sealing compound. The plastic sealing method can be mold filling, spraying equipment spraying, film sticking or brushing. The plastic sealing compound can be used Epoxy resins with or without fillers.
步骤四十一、环氧树脂表面研磨Step 41. Epoxy resin surface grinding
参见图73，在完成步骤四十的环氧树脂塑封后进行环氧树脂表面研磨，目的是使金属柱子露出塑封体表面以及控制环氧树脂的厚度。Referring to FIG. 73 , after completing the epoxy resin molding in step 40, the surface of the epoxy resin is ground, so as to expose the metal pillars to the surface of the molding body and control the thickness of the epoxy resin.
步骤四十二、电镀抗氧化金属层或是被覆抗氧化剂(OSP)Step forty-two, electroplating an anti-oxidation metal layer or coating anti-oxidant (OSP)
参见图74，在完成步骤四十一后的金属基板表面裸露在外的金属进行电镀抗氧化金属层，防止金属氧化，如金、镍金、镍钯金、锡或是被覆抗氧化剂(OSP)。Referring to FIG. 74 , the exposed metal on the surface of the metal substrate after step 41 is electroplated with an anti-oxidation metal layer to prevent metal oxidation, such as gold, nickel gold, nickel palladium gold, tin or coating antioxidant (OSP).
步骤四十三、装片Step forty-three, loading film
参见图75，在步骤四十二的基岛和引脚背面通过底部填充胶填满金属球与金属球之间以及芯片与基岛、基岛之间的空隙后倒装第二芯片，倒装的方式可以将底部填充胶涂覆在基岛和引脚上再倒装上第二芯片或是将底部充胶涂覆在第二芯片正面后倒装于基岛和引脚正面。Referring to Figure 75, in step 42, the base island and the back of the pins are filled with underfill glue between the metal balls and the gaps between the chip and the base island and the base island, and then the second chip is flipped. The method can be to apply the underfill glue on the base island and the pins and then flip-chip the second chip, or apply the underfill glue on the front side of the second chip and then flip-chip it on the base island and the pin front side.
步骤四十四、包封Step 44. Encapsulation
参见图76，将步骤四十三中的金属基板背面采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是用贴膜方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。Referring to Figure 76, the back of the metal substrate in step 43 is plastic-sealed with a plastic sealing compound. The plastic sealing method can be mold filling, spraying equipment spraying or film sticking. The plastic sealing compound can be filled with fillers or Epoxy resin without filler substances.
步骤四十五、切割成品Step 45. Cut the finished product
参见图77，将步骤四十四完成包封的半成品进行切割作业，使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来，制得先蚀后封三维系统级芯片倒装封装结构，可采用常规的钻石刀片以及常规的切割设备即可。Referring to Figure 77, the semi-finished products that have been encapsulated in step 44 are cut, so that the plastic package modules that are originally integrated in the form of an array assembly and contain chips are cut and separated one by one, and the etching before sealing is obtained. For the three-dimensional SoC flip-chip package structure, conventional diamond blades and conventional cutting equipment can be used.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310340917.1ACN103400776B (en) | 2013-08-06 | 2013-08-06 | First lose and seal three-dimensional systematic flip chip encapsulation structure and process afterwards |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310340917.1ACN103400776B (en) | 2013-08-06 | 2013-08-06 | First lose and seal three-dimensional systematic flip chip encapsulation structure and process afterwards |
| Publication Number | Publication Date |
|---|---|
| CN103400776A CN103400776A (en) | 2013-11-20 |
| CN103400776Btrue CN103400776B (en) | 2016-02-03 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310340917.1AActiveCN103400776B (en) | 2013-08-06 | 2013-08-06 | First lose and seal three-dimensional systematic flip chip encapsulation structure and process afterwards |
| Country | Link |
|---|---|
| CN (1) | CN103400776B (en) |
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|---|---|---|---|---|
| CN103489792B (en)* | 2013-08-06 | 2016-02-03 | 江苏长电科技股份有限公司 | First be honored as a queen and lose three-dimensional systematic flip chip encapsulation structure and process |
| CN115020368A (en)* | 2022-06-09 | 2022-09-06 | 安徽积芯微电子科技有限公司 | Prevent excessive subassembly of tin material |
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| CN1691314A (en)* | 2004-04-21 | 2005-11-02 | 美龙翔微电子科技（深圳）有限公司 | Flip ball grid array packaging base plate and making technique thereof |
| KR100723529B1 (en)* | 2006-05-10 | 2007-05-30 | 삼성전자주식회사 | Circuit board having a solder ball land having a hole and a semiconductor package having the same |
| CN102723284A (en)* | 2012-06-09 | 2012-10-10 | 江苏长电科技股份有限公司 | Method for manufacturing front-mounted three-dimensional line on single side of chip by using first etching and later packaging and packaging structure of three-dimensional line |
| CN102723293A (en)* | 2012-06-09 | 2012-10-10 | 江苏长电科技股份有限公司 | Etching-first and packaging-later manufacturing method for chip inversion single-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit |
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| TR01 | Transfer of patent right | Effective date of registration:20160505 Address after:214434 Jiangyin, Jiangsu, Chengjiang city street, Long Hill Road, No. 78 Patentee after:Jiangsu Changjiang Electronics Technology Co., Ltd. Address before:214434 Jiangyin, Jiangsu Province, the development of mountain road, No. 78, No. Patentee before:Jiangsu Changjiang Electronics Technology Co., Ltd. | |
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