技术领域technical field
本发明涉及传感器，尤其是涉及一种基于双谐振子结构的双谐振子硅微压力传感器及其制作方法。The invention relates to sensors, in particular to a double-resonator silicon micro-pressure sensor based on a double-resonator structure and a manufacturing method thereof.
背景技术Background technique
基于静电激励/电容检测的硅微谐振式MEMS压力传感器是目前精度最高的硅微压力传感器。它通过检测谐振结构的振动频率间接测量压力，为准数字信号输出。虽然谐振敏感检测方式在敏感机制上较传统的压阻及电容等检测方式复杂，且输出频率和压力之间存在固有的非线性，需要真空封装等不足，但具有精度高、稳定性好、容易集成、品质因子高、动态范围大、体积小、重量轻和功耗小等优点。因此，高精度硅微谐振式MEMS压力传感器在航天航空、气象、地质、航海、油井和工业检测等不同领域具有广泛用途。The silicon microresonant MEMS pressure sensor based on electrostatic excitation/capacitance detection is currently the most accurate silicon micro pressure sensor. It indirectly measures the pressure by detecting the vibration frequency of the resonant structure, and outputs it as a quasi-digital signal. Although the resonance sensitive detection method is more complicated than the traditional piezoresistive and capacitive detection methods in terms of sensitive mechanism, and there is inherent nonlinearity between the output frequency and pressure, and vacuum packaging is required, it has high precision, good stability, and easy It has the advantages of integration, high quality factor, large dynamic range, small size, light weight and low power consumption. Therefore, high-precision silicon microresonant MEMS pressure sensors are widely used in different fields such as aerospace, meteorology, geology, navigation, oil wells and industrial detection.
高的谐振子品质因子、好的热稳定性和低的残余应力是保证硅微谐振式MEMS压力传感器具有高精度的关键技术效果。这三个关键技术效果的获得可通过以下技术方案实现：High harmonic oscillator quality factor, good thermal stability and low residual stress are the key technical effects to ensure the high precision of silicon microresonant MEMS pressure sensor. The acquisition of these three key technical effects can be achieved through the following technical solutions:
（1）为了使谐振子具有较高的品质因子，谐振子设计成基于滑膜阻尼的面内振动形式和具有对称的结构，如DRUCK第三代产品中采用的谐振平衡技术，使硅微谐振子的品质因子值扩大了1倍多[P.K.Kinnell,R.Craddock.AdvancesinSiliconResonantPressureTransducers.ProcediaChemistry1,2009:104-107.]；(1) In order to make the harmonic oscillator have a high quality factor, the harmonic oscillator is designed to be based on the in-plane vibration form of the synovial film damping and has a symmetrical structure, such as the resonance balance technology adopted in the third generation of DRUCK products, so that the silicon micro-resonance The quality factor value of the son has been expanded by more than 1 times [P.K.Kinnell, R.Craddock.AdvancesinSiliconResonantPressureTransducers.ProcediaChemistry1,2009:104-107.];
（2）为了使传感器的微结构有好的热匹配性，可选择热膨胀系数相近的制备材料，以及设计热应力释放结构等；(2) In order to make the microstructure of the sensor have good thermal matching, materials with similar thermal expansion coefficients can be selected, and thermal stress relief structures can be designed;
（3）在传感器管芯与管座之间设置应力隔离垫和减小其接触面积，降低封装过程中产生的残余应力。(3) Set a stress isolation pad between the sensor die and the tube base and reduce the contact area to reduce the residual stress generated during the packaging process.
本申请人在中国专利CN102494813A中公开一种硅微谐振式压力传感器。采用基于滑膜阻尼的单谐振子工作，一定程度上可获得较高的品质因子。但由于谐振子的重心会随着振动而改变，使支撑体上所受到的力矩总和不为零，结果阻尼和能量损耗会降低谐振子的品质因数（子）；真空封装盖帽层为可进行阳极键合的玻璃材料，尽管可选用膨胀系数与硅相似的7740玻璃，但两种材料的热膨胀系数毕竟还不是完全相同，热匹配性就无法达到最优；另外未设计传感器管芯与管座之间的隔离层以降低封装过程中产生的残余应力。The applicant discloses a silicon micro-resonant pressure sensor in Chinese patent CN102494813A. A higher quality factor can be obtained to a certain extent by using a single harmonic oscillator based on synovial film damping. However, since the center of gravity of the harmonic oscillator will change with the vibration, the sum of the torque on the support body will not be zero. As a result, the damping and energy loss will reduce the quality factor (sub) of the harmonic oscillator; As the bonding glass material, although 7740 glass with an expansion coefficient similar to that of silicon can be selected, the thermal expansion coefficients of the two materials are not exactly the same after all, and the thermal matching cannot be optimal; The isolation layer between them can reduce the residual stress generated during the packaging process.
中国专利CN101614604B公开一种基于滑膜差动结构的硅谐振式压力传感器，也有基于双谐振子的结构，但其两个谐振子的两端并未连接到同一个支撑柱上，因而谐振子的振动能量还是会耦合到压力敏感膜片上，造成振动能量的损失，因而得不到高的品质因子。Chinese patent CN101614604B discloses a silicon resonant pressure sensor based on a synovial film differential structure. There is also a structure based on a double resonator, but the two ends of the two resonators are not connected to the same support column, so the resonator The vibration energy will still be coupled to the pressure-sensitive diaphragm, resulting in the loss of vibration energy, so a high quality factor cannot be obtained.
发明内容Contents of the invention
本发明的目的在于提供一种具有高品质因子、良好热匹配性和低残余应力的双谐振子硅微压力传感器及其制作方法。The object of the present invention is to provide a silicon micro-pressure sensor with double resonant oscillators and a manufacturing method thereof with high quality factor, good thermal matching and low residual stress.
本发明所述双谐振子硅微压力传感器由下至上依次设有应力隔离块、压力敏感座、谐振体、真空封装帽和电极；所述电极粘附在真空封装帽的上方，包括驱动电极、偏压电极和检测电极；应力隔离块设有中心通孔，该中心通孔为导气孔，应力隔离块设有缩径式的应力隔离环，应力隔离环与导气孔同轴。压力敏感座与应力隔离块上表面连接且与所述导气孔正对。谐振体设有边框，2个配重块，2个应力传递块、2个谐振子，以及2个驱动电极锚点、1个偏压电极锚点和1个检测电极锚点；所述边框、2个配重块和2个应力传递块均与压力敏感座上表面连接，2个配重块对称位于边框的左右两内侧，2个应力传递块左右对称设于2个上下平行的谐振子的两端，2个应力传递块均通过各自热应力释放区分别与第一谐振子和第二谐振子相连。2个驱动电极锚点分别设在第一谐振子和第二谐振子的上下两侧，偏压电极锚点位于2个驱动电极锚点的左右两侧且上下两端分别与边框和谐振子相连，检测电极锚点位于第一谐振子与第二谐振子之间；所述边框、驱动电极锚点、偏压电极锚点和检测电极锚点的上表面均与真空封装帽的下表面连接。真空封装帽设有位于驱动电极锚点上方的驱动电极锚点互连孔、位于驱动偏压电极锚点上方的偏压互连孔和位于检测电极锚点上方的检测电极锚点互连孔；所述驱动电极、偏压电极和检测电极分别通过驱动电极锚点互连孔、偏压互连孔和检测电极锚点互连孔与驱动电极锚点、偏压电极锚点和检测电极锚点电连接。The dual-resonator silicon micro pressure sensor of the present invention is provided with a stress isolation block, a pressure sensitive seat, a resonator, a vacuum packaging cap and an electrode in sequence from bottom to top; the electrode is adhered to the top of the vacuum packaging cap, including a driving electrode, The bias electrode and the detection electrode; the stress isolation block is provided with a central through hole, and the central through hole is an air guide hole, and the stress isolation block is provided with a reduced-diameter stress isolation ring, and the stress isolation ring is coaxial with the air guide hole. The pressure sensitive seat is connected to the upper surface of the stress isolation block and is facing the air guide hole. The resonator is provided with a frame, 2 counterweights, 2 stress transfer blocks, 2 resonators, and 2 drive electrode anchor points, 1 bias electrode anchor point and 1 detection electrode anchor point; the frame , 2 counterweights and 2 stress transfer blocks are connected to the upper surface of the pressure sensitive seat, the 2 counterweights are symmetrically located on the left and right inner sides of the frame, and the 2 stress transfer blocks are arranged symmetrically on the two upper and lower parallel harmonic oscillators Both ends of the two stress transfer blocks are connected to the first harmonic oscillator and the second harmonic oscillator through their respective thermal stress release areas. The two drive electrode anchor points are respectively set on the upper and lower sides of the first resonator and the second resonator, the bias electrode anchor points are located on the left and right sides of the two drive electrode anchor points, and the upper and lower ends are respectively connected to the frame and the resonator , the detection electrode anchor point is located between the first resonator and the second resonator; the upper surfaces of the frame, the drive electrode anchor point, the bias electrode anchor point and the detection electrode anchor point are all connected to the lower surface of the vacuum packaging cap . The vacuum encapsulation cap is provided with a drive electrode anchor point interconnection hole above the drive electrode anchor point, a bias voltage interconnection hole above the drive bias electrode anchor point, and a detection electrode anchor point interconnection hole above the detection electrode anchor point ; The drive electrode, bias electrode and detection electrode are connected to the drive electrode anchor point, bias electrode anchor point and detection electrode through the drive electrode anchor point interconnection hole, bias voltage interconnection hole and detection electrode anchor point interconnection hole respectively The electrode anchors are electrically connected.
所述第一谐振子与第二谐振子相同，第一谐振子与第二谐振子沿2个应力传递块的中轴线对称布置。The first harmonic oscillator is the same as the second harmonic oscillator, and the first harmonic oscillator and the second harmonic oscillator are arranged symmetrically along the central axes of the two stress transfer blocks.
所述的检测电极锚点，驱动电极锚点的中心连线与第一谐振子和第一谐振子平行的方向垂直。In the detection electrode anchor point, the central connection line of the drive electrode anchor point is perpendicular to the direction parallel to the first harmonic oscillator and the first harmonic oscillator.
所述的应力隔离块可采用与硅热膨胀系数相近的硼硅玻璃制成；所述压力敏感座和谐振体采用硅制成。The stress isolation block can be made of borosilicate glass with a thermal expansion coefficient close to that of silicon; the pressure sensitive seat and resonant body are made of silicon.
本发明所述双谐振子硅微压力传感器的制作方法，包括以下步骤：The manufacturing method of the double resonator silicon micro pressure sensor of the present invention comprises the following steps:
1）通过光刻胶剥离金属掩膜制备刻蚀掩膜图案，然后用干法刻蚀出谐振体结构，包括边框，配重块，应力传递块，热应力释放区，第一谐振子，第二谐振子，驱动电极锚点，偏压电极锚点，检测电极锚点在内的所有结构；1) Prepare the etching mask pattern by peeling off the metal mask with photoresist, and then etch the resonator structure by dry method, including the frame, the weight block, the stress transfer block, the thermal stress release area, the first harmonic oscillator, the second All structures including two harmonic oscillators, drive electrode anchor points, bias electrode anchor points, and detection electrode anchor points;
2）通过湿法腐蚀得到压力敏感座上部结构，即面对谐振体这一面的结构，得到压力敏感座与谐振体的组合体；2) The upper structure of the pressure sensitive seat is obtained by wet etching, that is, the structure facing the side of the resonator, and the combination of the pressure sensitive seat and the resonator is obtained;
3）在硅基底上湿法腐蚀出驱动电极锚点互连孔、偏压互连孔和检测电极锚点互连孔，后经干法或湿法氧化得到真空封装帽；3) On the silicon substrate, wet-etch the anchor point interconnection hole of the driving electrode, the bias interconnection hole and the anchor point interconnection hole of the detection electrode, and then obtain the vacuum packaging cap through dry or wet oxidation;
4）用键合或粘接工艺将步骤2）得到的组合体与步骤3）得到的真空封装帽连接到一起，形成双谐振子硅微压力传感器的主体结构；4) Connect the assembly obtained in step 2) and the vacuum packaging cap obtained in step 3) together by bonding or bonding to form the main structure of the dual-resonator silicon micro pressure sensor;
5）在主体结构制有驱动电极锚点互连孔、偏压互连孔和检测电极锚点互连孔的一侧，图案化溅射或蒸镀制出驱动电极、偏压电极和检测电极，在主体结构的压力敏感座一侧通过湿法腐蚀制成压力敏感座结构，得到新主体结构；5) On the side of the main structure where the anchor point interconnection hole of the driving electrode, the bias interconnection hole and the anchor point interconnection hole of the detection electrode are formed, the driving electrode, the bias electrode and the detection electrode are patterned by sputtering or vapor deposition. The electrode is made into a pressure-sensitive seat structure by wet etching on the side of the pressure-sensitive seat of the main structure, and a new main structure is obtained;
6）将新主体结构与应力隔离块键合或粘接到一起，即制成本发明所述双谐振子硅微压力传感器。6) The new main structure and the stress isolation block are bonded or glued together to manufacture the dual-resonator silicon micro pressure sensor of the present invention.
与现有技术比较，本发明的有益效果如下：Compared with the prior art, the beneficial effects of the present invention are as follows:
1）由于设有双谐振子，双谐振子在工作时两者反向振动，使谐振结构在振动时有固定的重心，沿每个支承连接轴线的力矩总和为零，每个振动周期消耗的能量会大大减小，谐振结构的品质因子得到较大提高。1) Due to the double harmonic oscillator, the double harmonic oscillator vibrates in opposite directions during operation, so that the resonant structure has a fixed center of gravity when vibrating, and the sum of moments along each support connection axis is zero, and the energy consumed in each vibration cycle The energy will be greatly reduced, and the quality factor of the resonant structure will be greatly improved.
2）硅材料的使用，使整个传感器主体结构的热膨胀相匹配，大大降低了谐振频率的温度系数，为传感器获得高测量精度奠定基础。2) The use of silicon material matches the thermal expansion of the main structure of the entire sensor, greatly reduces the temperature coefficient of the resonance frequency, and lays the foundation for the sensor to obtain high measurement accuracy.
3）由于在压力敏感座底部设有带导气孔的应力隔离块，显著降低了封装过程中产生的残余应力。3) Since the stress isolation block with air guide holes is arranged at the bottom of the pressure sensitive seat, the residual stress generated during the packaging process is significantly reduced.
附图说明Description of drawings
图1为本发明实施例的外观结构示意图。FIG. 1 is a schematic diagram of the appearance structure of an embodiment of the present invention.
图2为图1的分解结构示意图。FIG. 2 is a schematic diagram of the exploded structure of FIG. 1 .
图3为本发明实施例的谐振体结构示意图。FIG. 3 is a schematic diagram of the structure of a resonator according to an embodiment of the present invention.
图4为图3中虚线框所示谐振体的部分结构示意图。FIG. 4 is a partial structural schematic diagram of the resonator shown in the dotted line box in FIG. 3 .
图5为本发明实施例的应力隔离块的剖视结构示意图。Fig. 5 is a schematic cross-sectional structure diagram of a stress isolation block according to an embodiment of the present invention.
图6为本发明实施例的制作方法流程示意图。FIG. 6 is a schematic flow chart of a manufacturing method according to an embodiment of the present invention.
在图1～6中，各标记为：In Figures 1 to 6, each mark is:
1：应力隔离块，2：压力敏感座，3：谐振体，4：真空封装帽，5：电极；11：应力隔离环12：导气孔；31：边框，32：配重块，33：应力传递块，34：热应力释放区，35：第一谐振子，36：第二谐振子，37：驱动电极锚点，38:偏压电极锚点，39：检测电极锚点；41：驱动电极锚点互连孔，42：偏压互连孔，43：检测电极锚点互连孔；51：驱动电极，52：偏压电极，53：检测电极。1: Stress isolation block, 2: Pressure sensitive seat, 3: Resonator, 4: Vacuum packaging cap, 5: Electrode; 11: Stress isolation ring, 12: Air guide hole; 31: Frame, 32: Counterweight, 33: Stress Transmission block, 34: thermal stress release area, 35: first harmonic oscillator, 36: second harmonic oscillator, 37: drive electrode anchor point, 38: bias electrode anchor point, 39: detection electrode anchor point; 41: drive Electrode anchor point interconnection hole, 42: bias voltage interconnection hole, 43: detection electrode anchor point interconnection hole; 51: driving electrode, 52: bias voltage electrode, 53: detection electrode.
具体实施方式Detailed ways
参见图1～5，本发明实施例由下至上依次设有应力隔离块1、压力敏感座2、谐振体3、真空封装帽4和电极5。电极5粘附在真空封装帽4的上表面，电极5包括驱动电极51、偏压电极52和检测电极53。1-5, the embodiment of the present invention is provided with a stress isolation block 1, a pressure sensitive seat 2, a resonator 3, a vacuum packaging cap 4 and an electrode 5 in order from bottom to top. The electrode 5 is adhered on the upper surface of the vacuum packaging cap 4 , and the electrode 5 includes a drive electrode 51 , a bias electrode 52 and a detection electrode 53 .
所述应力隔离块1设有中心通孔12，该中心通孔12为导气孔12。应力隔离块1设有缩径式的应力隔离环11，所述的隔离环11与导气孔12同轴。压力敏感座2与应力隔离块1上表面连接且与所述导气孔12正对；谐振体3设有边框31，2个配重块32，2个应力传递块33，2个谐振子35和36，以及2个驱动电极锚点37、1个偏压电极锚点38和1个检测电极锚点39，所述边框31、2个配重块32和2个应力传递块33均与压力敏感座2上表面连接，2个配重块32对称位于边框31的左右两内侧，2个应力传递块33左右对称设于2个上下平行的谐振子35和36的两端并通过热应力释放区34与谐振子35和36相连，2个驱动电极锚点37分别设在谐振子35和36的上下两侧，偏压电极锚点38位于2个驱动电极锚点37的左右两侧且上下两端分别与边框31和谐振子相连，检测电极锚点39位于2个谐振子35和36之间；所述边框31、驱动电极锚点37、偏压电极锚点38和检测电极锚点39的上表面与真空封装帽4的下表面连接，真空封装帽4设有位于驱动电极锚点37上方的驱动电极锚点互连孔41、位于驱动偏压电极锚点38上方的偏压互连孔42和位于检测电极锚点39上方的检测电极锚点互连孔43；所述驱动电极51、偏压电极52和检测电极53分别通过驱动电极锚点互连孔41、偏压互连孔42和检测电极锚点互连孔43与驱动电极锚点37、偏压电极锚点38和检测电极锚点39分别电连接。The stress isolation block 1 is provided with a central through hole 12 , and the central through hole 12 is an air guide hole 12 . The stress isolation block 1 is provided with a reduced-diameter stress isolation ring 11 , and the isolation ring 11 is coaxial with the air guide hole 12 . The pressure sensitive seat 2 is connected to the upper surface of the stress isolation block 1 and faces the air guide hole 12; the resonator 3 is provided with a frame 31, 2 counterweights 32, 2 stress transfer blocks 33, 2 resonators 35 and 36, and 2 drive electrode anchor points 37, 1 bias electrode anchor point 38 and 1 detection electrode anchor point 39, the frame 31, 2 counterweights 32 and 2 stress transmission blocks 33 are all connected to the pressure The upper surface of the sensitive seat 2 is connected, the two counterweights 32 are symmetrically located on the left and right inner sides of the frame 31, and the two stress transfer blocks 33 are symmetrically arranged on the two ends of the two vertically parallel resonators 35 and 36 and released through thermal stress The area 34 is connected to the resonators 35 and 36, the two driving electrode anchor points 37 are respectively arranged on the upper and lower sides of the resonator 35 and 36, the bias electrode anchor point 38 is located on the left and right sides of the two driving electrode anchor points 37 and The upper and lower ends are respectively connected to the frame 31 and the resonators, and the detection electrode anchor point 39 is located between the two resonators 35 and 36; the frame 31, the drive electrode anchor point 37, the bias electrode anchor point 38 and the detection electrode anchor point The upper surface of 39 is connected with the lower surface of the vacuum packaging cap 4, and the vacuum packaging cap 4 is provided with the driving electrode anchor point interconnection hole 41 located above the driving electrode anchor point 37, the bias electrode located above the driving bias electrode anchor point 38 The interconnection hole 42 and the detection electrode anchor point interconnection hole 43 located above the detection electrode anchor point 39; the drive electrode 51, the bias electrode 52 and the detection electrode 53 respectively pass through the drive electrode anchor point interconnection hole 41, the bias voltage The interconnection hole 42 and the detection electrode anchor interconnection hole 43 are electrically connected to the drive electrode anchor 37 , the bias electrode anchor 38 and the detection electrode anchor 39 respectively.
如图3和4所示，所述第一谐振子35与第二谐振子36相同，沿两应力传递块33的中轴线对称布置。所述检测电极锚点39、驱动电极锚点37的中心连线与第一谐振子35和第二谐振子36平行的方向垂直。As shown in FIGS. 3 and 4 , the first harmonic oscillator 35 is the same as the second harmonic oscillator 36 , and is arranged symmetrically along the central axis of the two stress transfer blocks 33 . The central connection line between the detecting electrode anchor point 39 and the driving electrode anchor point 37 is perpendicular to the direction in which the first resonant oscillator 35 and the second resonant oscillator 36 are parallel.
所述应力隔离块1采用与硅热膨胀系数相近的硼硅玻璃制成；所述压力敏感座2和谐振体3采用硅制成；所述真空封装帽4采用硅或与硅热膨胀系数相近的硼硅玻璃制成。The stress isolation block 1 is made of borosilicate glass with a thermal expansion coefficient similar to that of silicon; the pressure sensitive seat 2 and resonator 3 are made of silicon; the vacuum packaging cap 4 is made of silicon or boron with a thermal expansion coefficient similar to silicon Made of silicon glass.
参见图6的（1）～（6），本实施例所述双谐振子硅微压力传感器的制作方法，包括以下步骤：Referring to (1) to (6) in Fig. 6, the manufacturing method of the dual-resonator silicon micro pressure sensor described in this embodiment includes the following steps:
1）通过光刻胶剥离金属掩膜制备刻蚀掩膜图案，然后用干法刻蚀出谐振体3上包括边框31，配重块32，应力传递块33，热应力释放区34，第一谐振子35，第二谐振子36，驱动电极锚点37，偏压电极锚点38，检测电极锚点39在内的所有结构；1) Prepare an etching mask pattern by peeling off the metal mask from the photoresist, and then dry-etch the resonator 3 including the frame 31, the counterweight 32, the stress transfer block 33, the thermal stress release area 34, the first All structures including the harmonic oscillator 35, the second harmonic oscillator 36, the driving electrode anchor point 37, the bias electrode anchor point 38, and the detection electrode anchor point 39;
2）湿法腐蚀得到压力敏感座2靠近谐振体3这一面的结构，得到压力敏感座2和谐振体3组合体；2) The structure of the pressure sensitive seat 2 close to the resonator 3 is obtained by wet etching, and the combination of the pressure sensitive seat 2 and the resonator 3 is obtained;
3）在硅基底上湿法腐蚀出驱动电极锚点互连孔41、偏压互连孔42和检测电极锚点互连孔43，后经干法或湿法氧化得到真空封装帽4；3) Wet-etch the driving electrode anchor point interconnection hole 41, the bias voltage interconnection hole 42 and the detection electrode anchor point interconnection hole 43 on the silicon substrate, and then dry or wet oxidation to obtain the vacuum packaging cap 4;
4）用键合或粘接工艺将经过2）得到的组合体与经过3）得到的真空封装帽4连接到一起，形成传感器的主体结构；4) Connect the assembly obtained through 2) and the vacuum packaging cap 4 obtained through 3) together by bonding or bonding to form the main structure of the sensor;
5）在步骤4）得到的主体结构制有驱动电极锚点互连孔41、偏压互连孔42和检测电极锚点互连孔43的一侧，图案化溅射或蒸镀驱动电极51、偏压电极52和检测电极53，然后在主体结构的压力敏感座2一侧湿法腐蚀完成压力敏感座2的制备；得到新主体结构5) One side of the main structure obtained in step 4) is provided with the driving electrode anchor point interconnection hole 41, the bias voltage interconnection hole 42 and the detection electrode anchor point interconnection hole 43, and the sputtering or evaporation driving electrode 51 is patterned , bias electrode 52 and detection electrode 53, and then complete the preparation of the pressure sensitive seat 2 by wet etching on the pressure sensitive seat 2 side of the main structure; obtain a new main structure
6）将新主体结构与应力隔离块1键合或粘接到一起，完成双谐振子硅微压力传感器的制作。6) Bonding or bonding the new main structure and the stress isolation block 1 together to complete the fabrication of the dual-resonator silicon micro pressure sensor.
以下给出本实施例所述双谐振子硅微压力传感器的工作原理：The working principle of the dual-resonator silicon micro-pressure sensor described in this embodiment is given below:
当外界压力作用在压力敏感座2时，压力敏感座2将压力值转化为第一谐振子35和第二谐振子36两端的压应力，从而导致第一谐振子35和第二谐振子36的内应力和刚度发生变化，进而使第一谐振子35和第二谐振子36的固有频率发生改变。驱动电极51、偏压电极52和检测电极53与外部电路连接，驱动电极51和偏压电极52分别给驱动电极锚点37和偏压电极锚点38引入驱动电压信号和偏置电压信号。第一谐振子35和第二谐振子36在驱动电压信号的作用下反向振动，检测电极53输出与外界压力成一定比例关系的频率信号。When the external pressure acts on the pressure sensitive seat 2, the pressure sensitive seat 2 converts the pressure value into the compressive stress at both ends of the first harmonic oscillator 35 and the second harmonic oscillator 36, thereby causing the pressure of the first harmonic oscillator 35 and the second harmonic oscillator 36 The internal stress and stiffness change, thereby changing the natural frequencies of the first harmonic oscillator 35 and the second harmonic oscillator 36 . The drive electrode 51, the bias electrode 52 and the detection electrode 53 are connected to an external circuit, and the drive electrode 51 and the bias electrode 52 respectively introduce a drive voltage signal and a bias voltage to the drive electrode anchor point 37 and the bias electrode anchor point 38 Signal. The first harmonic oscillator 35 and the second harmonic oscillator 36 vibrate in opposite directions under the action of the driving voltage signal, and the detection electrode 53 outputs a frequency signal proportional to the external pressure.
| Application Number | Priority Date | Filing Date | Title |
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| CN201310220870.5ACN103335751B (en) | 2013-06-05 | 2013-06-05 | A kind of double-harmonic oscillator silicon micropressure sensor and preparation method thereof |
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| CN201310220870.5ACN103335751B (en) | 2013-06-05 | 2013-06-05 | A kind of double-harmonic oscillator silicon micropressure sensor and preparation method thereof |
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| CN201310220870.5AActiveCN103335751B (en) | 2013-06-05 | 2013-06-05 | A kind of double-harmonic oscillator silicon micropressure sensor and preparation method thereof |
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