CN103325914A - Semiconductor device - Google Patents
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- CN103325914A CN103325914ACN2013101969874ACN201310196987ACN103325914ACN 103325914 ACN103325914 ACN 103325914ACN 2013101969874 ACN2013101969874 ACN 2013101969874ACN 201310196987 ACN201310196987 ACN 201310196987ACN 103325914 ACN103325914 ACN 103325914A
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Abstract
Description
Technical field
The invention belongs to technical field of semiconductors, relate to semiconductor device, the semi-conductive semiconductor device of N-shaped that particularly on substrate, is provided with in addition the p-type semiconductor of p-type electrode and is provided with in addition the N-shaped electrode.
Background technology
Go out epitaxial loayer and make optoelectronic semiconductor at Grown with MOCVD epitaxial crystallization growth method, need optoelectronic semiconductor is cut into opto-electronic semiconductor chip after finishing.
In the prior art, can adopt vertical cut or hemisection at the cutting optoelectronic semiconductor, no matter vertical cut or hemisection all can cause to the section of each layer rough damage, and the section of each layer can expose outside in cutting process, impurity and pulverizing that cutting process produces can be bonded on the section of each epitaxial loayer, cause and have electric conduction phenomena between each layer, and be adsorbed on the various charged particles on each layer section, the mobile ion in the semiconductor surface oxide layer, fixed charge and trapped charge etc. all can cause electric field, produce leakage current, thereby affected the performance of chip.
These above-mentioned problems affect stability and the reliability of semiconductor device, affected luminous efficiency.Semiconductor device when using as light source, is necessary that it improves luminous efficiency further, increases the light output variable.For reaching this purpose, need to all carry out on the basis of few high-quality crystallization at crystal defect and impurity content, and it is non-luminiferous again in conjunction with ratio to reduce inner quantum, improves the efficient of inner quantum and then the semiconductor device that high-luminous-efficiency is made in exploitation.
Summary of the invention
The objective of the invention is to have the problems referred to above for existing technology, a kind of semiconductor device has been proposed, technical problem to be solved by this invention: on substrate, not only having contained the p-type semiconductor of p-type electrode but also having contained the semi-conductive semiconductor device of N-shaped of N-shaped electrode, how to eliminate and have the phenomenons such as conduction, electric leakage between each epitaxial loayer of epitaxial wafer, and then efficient and the reliability of raising semiconductor device, so that this semiconductor device light-emitting area and light output variable reach optimal design, and it is controlled that semiconductor device can be accomplished.
The present invention realizes by following technical proposal: semiconductor device, this semiconductor device comprises substrate, have the N-shaped semiconductor that is provided with the N-shaped electrode and comprise the semi-conductive semiconductor chip of the p-type that is provided with the p-type electrode at substrate, it is characterized in that, the junction between each epitaxy junction crystal layer of the side in semiconductor chip or the semiconductor chip between two or more the adjacent luminous field forms the insulating barrier of one deck.
Junction between each the epitaxy junction crystal layer that when making semiconductor device the semiconductor chip side is exposed covers the last layer insulating barrier, prevent the phenomenon such as conduction, electric leakage between each epitaxy junction crystal layer and prevent dust and the entering of moisture by this insulating barrier, improve stability and the reliability of semiconductor device.As another kind of scheme, be formed with nonconducting insulating barrier between two or more the adjacent luminous field in the described semiconductor chip, namely be used for separating the isolating separator layer in two luminous fields.
Directly on the epitaxy junction wafer of optoelectronic semiconductor, directly form isolating separator layer, make two or more luminous field form independently luminescence chip by this insulation dividing layer, and the semi-conductive semiconductor chip of p-type of making on this basis the N-shaped semiconductor that comprises the N-shaped electrode and comprising the p-type electrode; Form single semiconductor chip along the cutting of insulation dividing layer after perhaps directly forming isolating separator layer on the epitaxy junction wafer of optoelectronic semiconductor.Because the existence of isolating separator layer has prevented the conduction between each layer epitaxial loayer on the epitaxy junction wafer, has improved and then improved efficient and the reliability of semiconductor device.
In above-mentioned semiconductor device, described substrate is monocrystalline Al2O3, monocrystal SiC, monocrystalline GaN, monocrystalline Ga2O3, single crystal ZnO, monocrystalline GaAs, monocrystalline InP or single crystalline Si; Or above-mentioned material forms integrated substrate in conjunction with monocrystalline on polycrystalline; Or above-mentioned material forms integrated substrate on noncrystalline in conjunction with monocrystalline.
In above-mentioned semiconductor device, form the semiconductor chip of III group-III nitride semiconductor or Ⅲ-Ⅴ compound semiconductor or group Ⅱ-Ⅵ compound semiconductor on the described substrate.
In above-mentioned semiconductor device, described semiconductor chip comprises luminescent layer, grows to have between substrate and luminescent layer and can reduce the substrate crystal defect to the resilient coating of semiconductor device impact.
In above-mentioned semiconductor device, described III group-III nitride semiconductor refers to contain one or more of GaN, InN or AlN and the mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms; Described Ⅲ-Ⅴ compound semiconductor refers to contain one or more of GaAs, InAs, InP or AlAs and the mixed crystal compound semiconductor that forms; Described group Ⅱ-Ⅵ compound semiconductor refers to contain one or several and the mixed crystal compound semiconductor that can send visible light or infrared light that forms of ZnO, ZnS, ZnSe, CdO, MgO, MgZnO, MgS, MgSe or CdS.
In above-mentioned semiconductor device, described insulating barrier is transparent resin or plastics; Perhaps insulating barrier is transparent SiO2, SiON or SiN4In one or more.
In above-mentioned semiconductor device, described isolating separator layer forms by ion implantation or forms by etched trench and fill insulant.
In above-mentioned semiconductor device, semiconductor chip in the described semiconductor device cuts by the following method and obtains: optoelectronic semiconductor epitaxy junction wafer is carried out etching or cutting and forms the grid duct, cover on the epitaxial loayer section that the side of semiconductor chip exposes with insulating barrier afterwards, then make the p-type electrode at the p-type contact layer of epitaxial loayer, make the N-shaped electrode at the N-shaped contact layer at the electronic semi-conductor epitaxy junction wafer back side again, again optoelectronic semiconductor epitaxy junction wafer is cut off or the rear formation semiconductor chip that fractures.
Compared with prior art, the present invention is directed on substrate the semi-conductive semiconductor device of N-shaped that not only contains the p-type semiconductor of p-type electrode but also contain the N-shaped electrode, junction between each epitaxy junction crystal layer that semiconductor chip side is showed out is coated with the insulating barrier of one deck, prevent the phenomenon such as conduction, electric leakage between each epitaxy junction crystal layer by this insulating barrier, and then efficient and the reliability of raising semiconductor device, so that this semiconductor device light-emitting area and light output variable reach optimal design, and it is controlled that semiconductor device can be accomplished.
Description of drawings
Fig. 1 is the structural representation of semiconductor device.
Fig. 2 is the structural representation of optoelectronic semiconductor epitaxy junction wafer.
Fig. 3 is the graphic layer structure of each layer of epitaxy junction wafer extension.
Fig. 4 is between the adjacent semiconductor device chip of the present invention, is coated with the schematic cross-section of insulating barrier on the junction of the epitaxial loayer that chip sides is exposed.
Fig. 5 is between the embodiment 2 adjacent semiconductor device chips, is coated with the schematic cross-section of insulating barrier on the epitaxial loayer that chip sides is exposed.
Among the figure, 1, substrate; 2, resilient coating; 21, the first resilient coating; 22, the second resilient coating; 3, N-shaped cladding layer; 4, luminescent layer; 5, p-type cladding layer; 6, p-type contact layer; 7, N-shaped contact layer; 8, insulating barrier; 9, isolating separator layer.
Embodiment
Below be specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiment.
Embodiment 1:
Semiconductor device of the present invention comprises substrate, have the N-shaped semiconductor that is provided with the N-shaped electrode and comprise the semi-conductive semiconductor chip of the p-type that is provided with the p-type electrode at substrate, and the junction between each epitaxy junction crystal layer that semiconductor chip side is showed out is coated with the insulating barrier of one deck.Prevent the phenomenon such as conduction, electric leakage between each epitaxy junction crystal layer by this insulating barrier.Take optoelectronic semiconductor as example, opto-electronic semiconductor module is specific as follows:
Opto-electronic semiconductor module as depicted in figs. 1 and 2, it comprisessubstrate 1, the resilient coating on substrate 12 and at the N-shaped contact layer 7 ofsubstrate 1 opposite side, at resilient coating 2 N-shaped cladding layer 3,luminescent layer 4, p-type cladding layer 5 and p-type contact layer 6 are arranged, connect the p-type electrode on the p-type contact layer 6, connect the N-shaped electrode on the N-shaped contact layer 7.The epitaxy junction wafer comprisessubstrate 1, resilient coating 2, N-shaped cladding layer 3,luminescent layer 4, p-type cladding layer 5 and p-type contact layer 6; Semiconductor chip is comprised of resilient coating 2, N-shaped cladding layer 3,luminescent layer 4, p-type cladding layer 5 and p-type contact layer 6.Resilient coating is to grow to have between substrate and luminescent layer can reduce the substrate crystal defect to the resilient coating of semiconductor device impact.
Substrate adopts monocrystalline Al2O3, monocrystal SiC, monocrystalline GaN, monocrystalline Ga2O3, single crystal ZnO, monocrystalline GaAs, monocrystalline InP or single crystalline Si; Or above-mentioned single material of planting forms integrated substrate in conjunction with monocrystalline on polycrystalline; Or above-mentioned single material of planting forms integrated substrate on noncrystalline in conjunction with monocrystalline.Form the semiconductor chip of III group-III nitride semiconductor or Ⅲ-Ⅴ compound semiconductor or group Ⅱ-Ⅵ compound semiconductor at substrate.
The III group-III nitride semiconductor refers to contain one or more of GaN, InN or AlN and the mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms; Ⅲ-Ⅴ compound semiconductor refer to contain one or more of GaAs, InAs, InP or AlAs and form can send visible light or infrared light mixed crystal compound semiconductor; Group Ⅱ-Ⅵ compound semiconductor refers to contain one or several and the mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms of ZnO, ZnS, ZnSe, CdO, MgO, MgZnO, MgS, MgSe or CdS.
Take SiC assubstrate 1 and growing group III nitride semiconductor epitaxial crystal sheet be example, the epitaxy junction wafer of optoelectronic semiconductor as shown in Figure 3, it comprisesSiC substrate 1 and GaN resilient coating, Al onSiC substrate 10.15Ga0.85N material N-shaped cladding layer 3, In0.2Ga0.8Nluminescent layer 4, Al0.15Ga0.85N material p-type cladding layer 5 and GaN material p-type contact layer 6.
When making, at first with the surface ofSiC substrate 1 after treatment, roughness drops to below the 15nm, re-uses chemical gaseous phase deposition MOCVD (Metal-organic Chemical Vapor Deposition) equipment by epitaxial crystallization growth method growing epitaxial, forms the epitaxy junction wafer.According to reciprocal space (Reciprocal lattice space) structure, the form of epitaxial surface and the result of structural analysis, both the hexagonal crystal of the faying face betweensubstrate 1 and the epitaxy junction wafer and the mixed proportion of cubic crystal were controlled at below 1%.Mixed proportion is controlled at the spontaneous polarization effect that can reduce inner quantum in 1%, improves luminous efficiency.
As shown in Figure 3, make the process of epitaxy junction wafer atSiC substrate 1 usefulness MOCVD epitaxial crystallization growth method as follows: be that 0.1 μ m doping Si concentration is 5E18/cm inSiC substrate 1 growth a layer thickness3N-GaN low temperature accumulation horizon, this low temperature accumulation horizon is grown to the firstresilient coating 21, the bed thickness of then growing is that 50nm doping Si concentration is 5E18/cm3N-AlxGa1-xThe N layer, in this example, x=0.09; The regrowth bed thickness is that 0.2 μ m doping Si concentration is 5E18/cm3The n-GaN layer, the bed thickness 50nm doping Si concentration of next growing is 5E18/cm3N-In0.09Al0.32Ga0.59The N layer, regrowth bed thickness 0.2 μ m doping Si concentration is 5E18/cm3The n-GaN layer; N-AlxGa1-xN layer, n-GaN layer, n-In0.09Al0.32Ga0.59N layer and n-GaN layer have consisted of the second resilient coating 22.InxAlyGazThe component ratio of N layer is in 0.05＜x＜0.11, and y=4.66x in the time of in the z=1-x-y scope, can relax the generation of the internal electric field that the crystal defect that causes because of lattice mismatch and spontaneous polarization and piezoelectric polarization cause.
Behind secondresilient coating 22 of having grown, at the bed thickness 0.5 μ m doping Si concentration 5E18/cm that grows successively3N-AlxGa1-xThe N cladding layer, x=0.15; At the non-doping content＜1E16/cm of growth bed thickness 0.2 μ m3I-InyGa1-yNluminescent layer 4, wherein y=0.2; Next bed thickness 0.5 μ m doped with Mg concentration 1E19/cm that grows3P-AlxGa1-xThe N cladding layer, x=0.15; Regrowth bed thickness 0.1 μ m doped with Mg concentration 1E19/cm3The p-GaN contact electrode layer.To obtain optoelectronic semiconductor epitaxy junction wafer after completing, this optoelectronic semiconductor epitaxy junction wafer is also referred to as semiconductor wafer, semiconductor wafer is cut into fritter can obtain semiconductor chip for semiconductor device.
Finish the making that begins to make semiconductor device after the making of optoelectronic semiconductor epitaxy junction wafer, at first be that cutting optoelectronic semiconductor epitaxy junction wafer obtains opto-electronic semiconductor chip, its process is to form the grid duct by engraving method at electronic semi-conductor's epitaxy junction wafer first, is SiO with material then2, SiON or SiN4Insulating barrier 8 cover junction between each epitaxy junction crystal layer that semiconductor chip side shows out, junction between each epitaxy junction crystal layer covered to realize purpose of the present invention, further, form one deck dielectric film with continue covering to couple together in connection with the insulating barrier of locating, because what this insulating material adopted is above-mentioned transparent material, this dielectric film is except making the junction prevent the electric leakage, and the anaclasis that luminescent layer can also be sent and reflecting improves the efficient of bright dipping.Then make the p-type electrode at the p-type contact layer 6 of epitaxial loayer, again the p-type electroconductive material for electrode is done and done greatly slightly, enable to tolerate large electric current and increase area of dissipation, then at the back side of electronic semi-conductor's epitaxy junction wafer, be to make the N-shaped electrode on the N-shaped contact layer 7 at the back side ofsubstrate 1, Fig. 4 is between the adjacent semiconductor device chip of the present invention, is coated with the schematic cross-section of insulating barrier 8 on the epitaxial loayer that chip sides is exposed.After completing, the p-type semiconductor that this semiconductor device has the N-shaped semiconductor of N-shaped electrode and comprises the p-type electrode at substrate.
Embodiment 2:
Embodiment 2 is basic identical withembodiment 1, difference is, finish when beginning to make the making of semiconductor device after the making of optoelectronic semiconductor epitaxy junction wafer, first the extension crystalline wafer is carried out the physics cutting, carrying out afterwards etching and make each layer of epitaxy junction wafer section smooth, is that the insulating barrier 8 of plastics or resin covers the junction between each epitaxy junction crystal layer that semiconductor chip side shows out with material then; Then make the p-type electrode at the p-type contact layer of epitaxial loayer, make the N-shaped electrode at the N-shaped contact layer at the electronic semi-conductor epitaxy junction wafer back side again, again optoelectronic semiconductor epitaxy junction wafer is cut off or the rear formation semiconductor chip that fractures.The extension crystalline wafer is carried out the physics cutting can cause each layer section dislocation and out-of-flatness, by etching these sections are removed, keeps that the junction between each epitaxial loayer covers the last layer insulating barrier again behind the smooth section, further form the passivating film that insulate.
Embodiment 3:
As shown in Figure 5, this semiconductor device comprises substrate, at the semi-conductive semiconductor chip of p-type that substrate has the N-shaped semiconductor of N-shaped electrode and comprises the p-type electrode, be formed with nonconductingisolating separator layer 9 between two or more the adjacent luminous field in the semiconductor chip.Isolatingseparator layer 9 forms by ion implantation or doping method or forms by etched trench and fill insulant.Specific as follows:
With photoetching process two or connect more than the brilliant surface of circle in adjacent luminous field enclose the diaphragm that one deck prevents Implantation, offer afterwards the window of chip design at diaphragm, use again B ion or O2Thereby ion is being injected into formation isolatingseparator layer 9, i.e. insulating barrier between the adjacent luminous field under the accelerating voltage of 100KV.But otherguide analogy embodiment 1 is not repeated.
Directly on the epitaxy junction wafer of optoelectronic semiconductor, directly form isolating separator layer, make two or more luminous field form independently luminescence chip by this insulation dividing layer, and the semi-conductive semiconductor chip of p-type of making on this basis the N-shaped semiconductor that comprises the N-shaped electrode and comprising the p-type electrode; Form single semiconductor chip along the cutting of insulation dividing layer after perhaps directly forming isolating separator layer on the epitaxy junction wafer of optoelectronic semiconductor.Because the existence of isolating separator layer has prevented the conduction between each layer epitaxial loayer on the epitaxy junction wafer, has improved and then improved efficient and the reliability of semiconductor device.
Claims (9)
1. semiconductor device, this semiconductor device comprises substrate, the semi-conductive semiconductor chip of p-type that has the N-shaped semiconductor that is provided with the N-shaped electrode and be provided with the p-type electrode at substrate, it is characterized in that, the junction between each epitaxy junction crystal layer of the side in semiconductor chip or the semiconductor chip between two or more the adjacent luminous field forms the insulating barrier of one deck.
2. semiconductor device according to claim 1 is characterized in that, described substrate is monocrystalline Al2O3, monocrystal SiC, monocrystalline GaN, monocrystalline Ga2O3, single crystal ZnO, monocrystalline GaAs, monocrystalline InP or single crystalline Si; Or above-mentioned material forms integrated substrate in conjunction with monocrystalline on polycrystalline; Or above-mentioned material forms integrated substrate on noncrystalline in conjunction with monocrystalline.
3. semiconductor device according to claim 1 and 2 is characterized in that, forms the semiconductor chip of III group-III nitride semiconductor or Ⅲ-Ⅴ compound semiconductor or group Ⅱ-Ⅵ compound semiconductor on the described substrate.
4. semiconductor device according to claim 3 is characterized in that, described semiconductor chip comprises luminescent layer, grows to have between substrate and luminescent layer and can reduce the substrate crystal defect to the resilient coating of semiconductor device impact.
5. semiconductor device according to claim 1 and 2 is characterized in that, described III group-III nitride semiconductor refers to contain one or more of GaN, InN or AlN and the mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms.
6. semiconductor device according to claim 1 and 2, it is characterized in that, described Ⅲ-Ⅴ compound semiconductor refer to contain one or more of GaAs, InAs, InP or AlAs and form can send visible light or infrared light mixed crystal compound semiconductor.
7. semiconductor device according to claim 1 and 2, it is characterized in that, described group Ⅱ-Ⅵ compound semiconductor refers to contain one or several and the mixed crystal compound semiconductor that can send visible light or ultraviolet light that forms of ZnO, ZnS, ZnSe, CdO, MgO, MgZnO, MgS, MgSe or CdS.
8. semiconductor device according to claim 1 and 2 is characterized in that, described isolating separator layer forms by ion implantation or forms by etched trench and fill insulant.
9. semiconductor device according to claim 1 and 2 is characterized in that, described insulating barrier is nonconducting transparent material.
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| US10448088B2 (en) | 2014-01-08 | 2019-10-15 | Samsung Electronics Co., Ltd. | Apparatus and method for transmitting and receiving signaling information in digital broadcast system |
| WO2020000184A1 (en)* | 2018-06-26 | 2020-01-02 | 苏州晶湛半导体有限公司 | Semiconductor structure and manufacturing method therefor |
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- 2013-05-23CNCN201310196987.4Apatent/CN103325914B/ennot_activeExpired - Fee Related
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| US10448088B2 (en) | 2014-01-08 | 2019-10-15 | Samsung Electronics Co., Ltd. | Apparatus and method for transmitting and receiving signaling information in digital broadcast system |
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| WO2020000184A1 (en)* | 2018-06-26 | 2020-01-02 | 苏州晶湛半导体有限公司 | Semiconductor structure and manufacturing method therefor |
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