CN103294310A - Manufacture method of OGS (one glass solution) touch screen - Google Patents

Abstract

The invention discloses a manufacture method of an OGS (one glass solution) touch screen. The method includes: manufacturing a shading thin film on the surface of a glass cover plate; imaging the shading thin film through photolithography to form a shading thin film frame; manufacturing a transparent insulating layer; manufacturing a transparent conductive layer and imaging the same to form transparent conductive pattern functional electrodes; electrically connecting a FPC (flexible printed circuit board) with a touch IC (integrated circuit) chip with pins of the functional electrodes through hot pressing to form the finished OGS touch screen, By the method, product performance and reliability are increased, yield is increased, production efficiency is increased, and the bottleneck in OGS touch screen production and manufacture is broken through.

Description

A kind of method for making of OGS touch-screen

Technical field

The present invention relates to the touch screen technology field, relate in particular to a kind of making of OGS touch-screen method.

 

Background technology

Touch-screen is as a kind of intelligentized human-computer interaction interface product, the a lot of fields in social production and life have obtained application more and more widely, and are especially with the fastest developing speed in consumer electronics sector (as fields such as smart mobile phone, panel computers).

Touch screen technology is of a great variety, mainly comprises resistance-type, condenser type, infrared type, table sound wave type etc.Capacitive touch screen not only shows and is quick on the draw, and support multi-point touch, and the life-span is long, and the maturation along with control IC technology has become mainstream technology in the market.And the OGS technology of a new generation is the new developing direction of capacitive touch screen, and from technological layer, the OGS technology is simple in structure than the G/G touch technology of present main flow, and is light, thin, light transmission is good; Owing to save a slice glass baseplate and bonding process, be beneficial to and reduce production costs, improve the product yield.

At present, general OGS touch-screen product structure as shown in Figure 1a, at first at cover-plate glass 11 printing one deck organic insulation printing inklight shield layers 12, make ITO transparentpattern electrode layer 13 then, by hot pressing FPC 14 (having touch-control IC 15) is coupled together with ito transparent electrode layer pin electricity, final electrode layer below attaches one deck blow-outdisc 16, prevents from that cover-plate glass from breaking to cause danger.This structure a lot of problems can occur in manufacturing process, at first be that the thickness of ink for screen printing is very thick, causes forming very high step between printing ink and the glass, directly influences the making of ITO conductive layer pattern and lead-in wire pin thereof; Next is the printing ink non-refractory, and is difficult to obtain low-resistance ITO conductive layer at low temperatures; In addition, the non-constant of the adhesion of ITO conductive layer on printing ink directly influences connection and the reliability of products of FPC.

Fig. 1 b is a kind of improved OGS touch screen panel plate structure, by covering one deck organic stream flat bed (OC layer) 37 on printing ink lightshield layer surface 32, solved because the step problem that the printing ink light shield layer causes, improved the flatness on cover-plate glass surface simultaneously, and then improved the homogeneity of ITO conductive layer, make things convenient for the making of contact conductor pin and being connected of FPC.This structure, on the one hand, because printing ink and OC material exist thermotolerance problem, particularly printing ink, so the resistance value of ITO conductive layer and adhesion still have problems; On the other hand, owing to increased one deck OC, so the thickness of product and penetrability received very big influence, and it is complicated that technology also becomes.

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Summary of the invention

The present invention prints the dielectric ink layer earlier for solving in the existing OGS touch screen technology, the back makes the technical matters that ITO pattern electrode layered scheme occurs, and has proposed a kind of method for making of OGS touch-screen.

Concrete technical scheme is as follows:

A kind of method for making of OGS touch-screen is characterized in that, may further comprise the steps:

(1) makes the light shield layer film in glass cover plate surfaces;

Utilize the method for vacuum magnetic-control sputtering to make the light shield layer film, the light shield layer film adopts the ferrous metal film, obtains fine and close ferrous metal film by the control sputtering condition;

(2) realize graphical by photoetching technique to the light shield layer film;

Form patterned light shield layer film by technologies such as gluing, exposure, development, etching and stripings, i.e. light shield layer film frame;

(3) making of transparent insulating layer;

Utilize the method for vacuum magnetic-control sputtering to make transparent insulating layer, the control sputtering condition guarantees the insulativity of transparent insulating layer;

(4) make transparency conducting layer and graphical;

Utilize the method for vacuum magnetic-control sputtering to make the electrically conducting transparent layer film, by gluing, exposure, development, post bake, etching and striping technology the electrically conducting transparent layer film carried out graphically then, concrete technological parameter:

Plated film vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 300 ℃, the thickness 10nm ~ 20nm of transparency conducting layer;

The coating photoresist covers etched transparency conducting layer, the thickness 1600 ~ 2000nm of photoresist, and in the homogeneity 5%, preliminary drying temperature: 80 ~ 90 ℃;

Photoresist is exposed, i.e. photoetching electrode pattern on photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 100 ~ 120mj, the light shield of the electrode pattern of transparency conducting layer is chromium plate, apart from the size 100um ~ 200um of substrate;

To photoresist developing and sclerosis, adopt NaOH, concentration 0.1 ~ 0.08MOL/L, temperature: 20 ~ 35 ℃, 50 seconds ~ 120 seconds time, hardening temperature: 100 ~ 120 ℃, 30 ~ 35 minutes time;

The etching transparency conducting layer forms transparency conducting layer electrode figure, and material: HCL60% ~ 6,5%+,HO2 40% ~ 35% is used in etching, temperature: 40 ~ 45 ℃, and the time: 120 ~ 220 seconds;

Remove photoresist, form the transparent conductive patterns functional electrode, use material: NaOH, concentration 2.0 ~ 1.5MOL/L, temperature: 30 ~ 35 ℃, 100 seconds ~ 120 seconds time, use the pure water rinsing at last;

(5) FPC that will have a touch-control IC chip carries out electricity by hot pressing and described electrode pin and is connected, and forms final OGS touch-screen.

The method for making of described OGS touch-screen is characterized in that: described glass cover-plate adopts tempered glass.

The method for making of described OGS touch-screen is characterized in that: described ferrous metal film adopts Cr film or Ti film.

The method for making of described OGS touch-screen is characterized in that: described transparent insulating layer is the SiO2 film.

The method for making of described OGS touch-screen is characterized in that: the material of described transparency conducting layer is the ITO material.

Compared with prior art, OGS touch-screen provided by the invention has the following advantages:

(1) utilizes the film route to make the coloured light shield layer of inorganic metal, can in very thin thickness, realize ultralow transmitance, solved thoroughly that printing ink is thicker, the problem of non-refractory, make things convenient for the making of follow-up ITO electrode layer.

(2) the light shield layer material is chosen in chromium (Cr), titanium metallic films such as (Ti) commonly used in the incrustation field, technical maturity, and cost is low; Though metal material has electric conductivity, can influence the making of ITO pattern electrodes layer, can increase one deck SiO2 insulation course as isolation, also strengthened the flatness on tempered glass surface simultaneously, improved follow-up ITO conductive layer performance.

On the whole, the present invention not only can improve electric property and the homogeneity of ITO conductive layer, strengthen the adhesion of ITO electrode layer on light shield layer, and be conducive to realize the pressing of the graphical and FPC of ITO conductive layer, improve the Performance And Reliability of OGS touch-screen product, improve product yield and production efficiency.

 

Description of drawings

Fig. 1 a is the structural representation of existing OGS touch-screen.

Fig. 1 b is the panel construction synoptic diagram of existing OGS touch-screen.

Fig. 2 is the structural representation of OGS touch-screen of the present invention.

Fig. 3 makes Cr film cross section structure synoptic diagram at cover-plate glass.

Fig. 4 is the synoptic diagram of Cr film light shield layer graphic structure.

Fig. 5 is the synoptic diagram of photoresist graphic structure.

 

Embodiment

For the technical matters that the present invention is solved, technical scheme makes those of ordinary skill in the art clearer, below in conjunction with description of drawings, the present invention is described in further detail.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.

Embodiment 1

A kind of method for making of OGS touch-screen may further comprise the steps:

(1) make the light shield layer film on glass cover-plate 21 surfaces, glass cover-plate 21 adopts tempered glass;

Utilize the method for vacuum magnetic-control sputtering to make the light shield layer film, the light shield layer film adopts the ferrous metal film, and the ferrous metal film adopts the Cr film, obtains fine and close light shield layer film by the control sputtering condition, as shown in Figure 3;

(2) realize graphical by photoetching technique to the light shield layer film;

Form patterned light shield layer film by technologies such as gluing, exposure, development, etching and stripings, i.e. light shieldlayer film frame 22, the structure of light shieldlayer film frame 22 as shown in Figure 4,41 is black Cr rete zone, 42 is the cover-plate glass surface;

(3) making oftransparent insulating layer 26;

Utilize the method for vacuum magnetic-control sputtering to maketransparent insulating layer 26,transparent insulating layer 26 is the SiO2 film, and the control sputtering condition guarantees the insulativity oftransparent insulating layer 26;

(4) maketransparency conducting layer 23 and graphical, the material of transparency conducting layer is the ITO material;

Utilize the method for vacuum magnetic-control sputtering to maketransparency conducting layer 23 films, by gluing, exposure, development, post bake, etching and striping technologytransparency conducting layer 23 films carried out graphically then, concrete technological parameter:

Plated film vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 300 ℃, the thickness 10nm ~ 20nm of transparency conducting layer;

The coating photoresist covers etched transparency conducting layer, the thickness 1600 ~ 2000nm of photoresist, and in the homogeneity 5%, preliminary drying temperature: 80 ~ 90 ℃;

Photoresist is exposed, i.e. photoetching electrode pattern on photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 100 ~ 120mj, the light shield of the electrode pattern of transparency conducting layer is chromium plate, apart from the size 100um ~ 200um of substrate;

To photoresist developing and sclerosis, adopt NaOH, concentration 0.1 ~ 0.08MOL/L, temperature: 20 ~ 35 ℃, 50 seconds ~ 120 seconds time, hardening temperature: 100 ~ 120 ℃, 30 ~ 35 minutes time;

The etching transparency conducting layer forms transparency conducting layer electrode figure, and material: HCL60% ~ 6,5%+,HO2 40% ~ 35% is used in etching, temperature: 40 ~ 45 ℃, and the time: 120 ~ 220 seconds;

Remove photoresist, form the transparent conductive patterns functional electrode, use material: NaOH, concentration 2.0 ~ 1.5MOL/L, temperature: 30 ~ 35 ℃, 100 seconds ~ 120 seconds time, use the pure water rinsing at last;

(5) FPC 24 that will have a touch-control IC chip 25 carries out electricity by hot pressing and described electrode pin and is connected, and forms final OGS touch-screen, as shown in Figure 2.

Embodiment 2

A kind of method for making of OGS touch-screen may further comprise the steps:

(1) make patterned photoresist on glass cover-plate 21 surfaces, glass cover-plate 21 adopts tempered glass;

Form patterned photoresist by technologies such as gluing, exposure, developments, the graphic structure of photoresist is frame shape, and as shown in Figure 5,51 parts are the photoresist graphics field, and 52 parts do not have photoresist;

(2) make the light shield layer film;

Utilize the method for vacuum magnetic-control sputtering to make the light shield layer film, the light shield layer film adopts the ferrous metal film, and the ferrous metal film adopts the Cr film, obtains fine and close light shield layer film by the control sputtering condition, as shown in Figure 3;

(3) realize graphical by lift-off technology to the light shield layer film;

By striping technology, remove the light shield layer film of top, photoresist graphics field, form patterned light shield layer film, i.e. light shieldlayer film frame 22, the structure front elevation of light shieldlayer film frame 22 is as shown in Figure 4;

(4) making of transparent insulatinglayer 26;

Utilize the method for vacuum magnetic-control sputtering to make transparent insulatinglayer 26, transparent insulatinglayer 26 is the SiO2 film, and the control sputtering condition guarantees the insulativity of transparent insulatinglayer 26;

(5) maketransparency conducting layer 23 and graphical, the material of transparency conducting layer is the ITO material;

Utilize the method for vacuum magnetic-control sputtering to maketransparency conducting layer 23 films, by gluing, exposure, development, post bake, etching and striping technologytransparency conducting layer 23 films carried out graphically then, concrete technological parameter:

Plated film vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 300 ℃, the thickness 10nm ~ 20nm of transparency conducting layer;

The coating photoresist covers etched transparency conducting layer, the thickness 1600 ~ 2000nm of photoresist, and in the homogeneity 5%, preliminary drying temperature: 80 ~ 90 ℃;

Photoresist is exposed, i.e. photoetching electrode pattern on photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 100 ~ 120mj, the light shield of the electrode pattern of transparency conducting layer is chromium plate, apart from the size 100um ~ 200um of substrate;

To photoresist developing and sclerosis, adopt NaOH, concentration 0.1 ~ 0.08MOL/L, temperature: 20 ~ 35 ℃, 50 seconds ~ 120 seconds time, hardening temperature: 100 ~ 120 ℃, 30 ~ 35 minutes time;

The etching transparency conducting layer forms transparency conducting layer electrode figure, and material: HCL60% ~ 6,5%+,HO2 40% ~ 35% is used in etching, temperature: 40 ~ 45 ℃, and the time: 120 ~ 220 seconds;

Remove photoresist, form the transparent conductive patterns functional electrode, use material: NaOH, concentration 2.0 ~ 1.5MOL/L, temperature: 30 ~ 35 ℃, 100 seconds ~ 120 seconds time, use the pure water rinsing at last;

(5)FPC 24 that will have a touch-control IC chip 25 carries out electricity by hot pressing and described electrode pin and is connected, and forms final OGS touch-screen, as shown in Figure 2.

Claims (5)

1. the method for making of an OGS touch-screen is characterized in that, may further comprise the steps:

(1) makes the light shield layer film in glass cover plate surfaces;

Utilize the method for vacuum magnetic-control sputtering to make the light shield layer film, the light shield layer film adopts the ferrous metal film, obtains fine and close ferrous metal film by the control sputtering condition;

(2) realize graphical by photoetching technique to the light shield layer film;

Form patterned light shield layer film by technologies such as gluing, exposure, development, etching and stripings, i.e. light shield layer film frame;

(3) make transparent insulating layer;

Utilize the method for vacuum magnetic-control sputtering to make transparent insulating layer, the control sputtering condition guarantees the insulativity of transparent insulating layer;

(4) make transparency conducting layer and graphical;

Utilize the method for vacuum magnetic-control sputtering to make the electrically conducting transparent layer film, by gluing, exposure, development, post bake, etching and striping technology the electrically conducting transparent layer film carried out graphically then, concrete technological parameter:

Plated film vacuum tightness: 0.01 ~ 0.5Pa, temperature: 220 ~ 300 ℃, the thickness 10nm ~ 20nm of transparency conducting layer;

The coating photoresist covers etched transparency conducting layer, the thickness 1600 ~ 2000nm of photoresist, and in the homogeneity 5%, preliminary drying temperature: 80 ~ 90 ℃;

Photoresist is exposed, i.e. photoetching electrode pattern on photoresist, conditions of exposure is: ultraviolet wavelength: 365nm, luminous flux: 100 ~ 120mj, the light shield of the electrode pattern of transparency conducting layer is chromium plate, apart from the size 100um ~ 200um of substrate;

To photoresist developing and sclerosis, adopt NaOH, concentration 0.1 ~ 0.08MOL/L, temperature: 20 ~ 35 ℃, 50 seconds ~ 120 seconds time, hardening temperature: 100 ~ 120 ℃, 30 ~ 35 minutes time;

The etching transparency conducting layer forms transparency conducting layer electrode figure, and material: HCL60% ~ 6,5%+,HO2 40% ~ 35% is used in etching, temperature: 40 ~ 45 ℃, and the time: 120 ~ 220 seconds;

Remove photoresist, form the transparent conductive patterns functional electrode, use material: NaOH, concentration 2.0 ~ 1.5MOL/L, temperature: 30 ~ 35 ℃, 100 seconds ~ 120 seconds time, use the pure water rinsing at last;

(5) FPC that will have a touch-control IC chip carries out electricity by hot pressing and described electrode pin and is connected, and forms final OGS touch-screen.

2. the method for making of OGS touch-screen according to claim 1 is characterized in that: described glass cover-plate employing tempered glass.

3. the method for making of OGS touch-screen according to claim 1 is characterized in that: described ferrous metal film employing Cr film or Ti film.

4. the method for making of OGS touch-screen according to claim 1, it is characterized in that: described transparent insulating layer is the SiO2 film.

5. the method for making of OGS touch-screen according to claim 1, it is characterized in that: the material of described transparency conducting layer is the ITO material.

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