Image element structure and preparation method thereofTechnical field
The invention relates to a kind of image element structure and preparation method thereof, and relate to a kind of image element structure with storage capacitors and preparation method thereof especially.
Background technology
Because the demand of display grows with each passing day, add the rise of environmental protection concept in recent years, have that high image quality, space efficiency utilization are good, the Thin Film Transistor-LCD (thinfilmtransistorliquidcrystaldisplay, TFT-LCD) of low consumpting power, the advantageous characteristic such as radiationless becomes the main flow of monitor market gradually.In order to meet the demand of user, the performance of Thin Film Transistor-LCD is constantly towards high-contrast (highcontrastratio), without gray-scale inversion (nograyscaleinversion), colour cast little (littlecolorshift), high brightness (highluminance), high colorfulness, high color saturation, fast reaction, display frame, stable characteristic develops with wide viewing angle etc.
Generally speaking, Thin Film Transistor-LCD formed primarily of the two substrates and the liquid crystal layer be configured between this two substrates being configured with picture element array and colorized optical filtering array respectively.Image element structure of the prior art comprises thin-film transistor, pixel electrode and storage capacitors bottom electrode.Pixel electrode is electrically connected thin-film transistor.Storage capacitors bottom electrode and pixel electrode form a storage capacitors, to maintain the stable of image element structure show image.Due to the capacitance of storage capacitors and the charge-discharge characteristic of TFT-LCD picture element closely bound up, the excessive problem that may have undercharge of storage capacitors; Too little, easily cause the flicker of display frame.But, scan wiring, data wiring and storage capacitors bottom electrode distribution that the plurality of groups of substrates of thin-film transistor of TFT-LCD uses are generally the metal materials adopting shading, and the distribution of metal material by shield lights through, it limits the light utilization ratio of product greatly, and the consumed power of backlight module is increased.If promote TFT-LCD light utilization ratio by the fabric width of minimizing scan wiring, data wiring, by making the RC load of TFT-LCD distribution increase, cause the distortion that signal transmits; And promote TFT-LCD light utilization ratio by the fabric width reducing storage capacitors electrode, then may not be inconsistent demand because of storage capacitors, and cause display frame to glimmer, affect display quality.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of this invention is to provide one can increase storage capacitors value image element structure and preparation method thereof.
To achieve these goals, the present invention by the following technical solutions: a kind of image element structure, be configured on a substrate, this image element structure comprises:
One gate, is configured on described substrate;
One capacitance electrode, is configured on described substrate;
One electric capacity transparency electrode, is configured on described substrate, and covers described capacitance electrode and substrate partly;
One lock insulating barrier, is configured on described substrate, and covers gate and electric capacity transparency electrode, this lock insulating barrier tool
Have an opening, and this opening exposes partition capacitance transparency electrode;
Semi-conductor layer, is configured on described lock insulating barrier, and is positioned at the top of described gate;
One source pole, is configured on described lock insulating barrier;
One drain, be configured on described lock insulating barrier, wherein source electrode and this drain expose part of semiconductor layer;
One protective layer, is configured on described lock insulating barrier, and the electric capacity transparency electrode that covering source electrode, drain, lock insulating barrier and described opening expose, wherein this protective layer has a contact hole, and this contact hole exposes part drain;
And a pixel electrode, be configured on this protective layer, this pixel electrode is electrically connected through described contact hole and drain, has the storage capacitors that an overlapping area is formed between the electric capacity transparency electrode that wherein this pixel electrode and described opening expose.
Described gate and capacitance electrode are same rete.
The material of described electric capacity transparency electrode is indium tin oxide or indium-zinc oxide.
Described gate, source electrode and drain form an end lock type thin-film transistor.
In order to realize aforementioned object, the present invention also provides a kind of manufacture method of image element structure, and it comprises:
Form a gate and a capacitance electrode on a substrate;
Form electric capacity transparency electrode on described substrate, wherein this electric capacity transparency electrode covers described capacitance electrode and this substrate of part;
Form a lock insulating barrier on described substrate, wherein this lock insulating barrier covers described gate and electric capacity transparency electrode, and this lock insulating barrier has an opening, and this opening exposes this electric capacity transparency electrode of part;
Form semi-conductor layer on lock insulating barrier, and semiconductor layer is positioned at the top of gate;
Formation one source pole and a drain are on described lock insulating barrier, and source electrode and this drain expose part of semiconductor layer;
Form a protective layer on described lock insulating barrier, and this protective layer covers the electric capacity transparency electrode that source electrode, drain, lock insulating barrier and described opening expose, this protective layer has a contact hole, and this contact hole exposes part drain;
Form a pixel electrode on this protective layer, and this pixel electrode is electrically connected through described contact hole and described drain, and forms the storage capacitors that there is an overlapping area and form between the electric capacity transparency electrode that exposes of this pixel electrode and described opening.
Described gate and this capacitance electrode are same rete.
The material of described electric capacity transparency electrode is indium tin oxide or indium-zinc oxide.
The step of described formation gate and capacitance electrode, comprising:
Form a first metal layer on this substrate; And
This first metal layer of patterning, to form this gate and this capacitance electrode.
The step of described formation source electrode and drain, comprising:
Form one second metal level on described semiconductor layer and described lock insulating barrier; And
This second metal level of patterning, to form this source electrode and drain.
Described gate, source electrode and drain form an end lock type thin-film transistor.
Adopt above technical scheme, because lock insulating barrier of the present invention does not cover electric capacity transparency electrode completely, but there is the opening that exposes partition capacitance transparency electrode, the distance therefore between pixel electrode and partition capacitance transparency electrode shortens by the design of opening.Moreover, be and distance between pixel electrode and electric capacity transparency electrode is inversely proportional to that therefore the design of image element structure of the present invention effectively can promote overall storage capacitors value due to the size of storage capacitors value.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail:
Fig. 1 be one of image element structure embodiment of the present invention schematic diagram in top down perspective;
Fig. 2 is the generalized section of line I-I along Fig. 1 and line II-II;
Fig. 3 to Figure 11 is followed successively by the generalized section of the image element structure step-by-step produced of the manufacture method of image element structure of the present invention.
Embodiment
Fig. 1 illustrates the schematic diagram in top down perspective of the image element structure into one embodiment of the invention.Fig. 2 illustrates as along the line I-I of Fig. 1 and the generalized section of line II-II.Please also refer to Fig. 1 and Fig. 2, in the present embodiment, image element structure 100 is configured on a substrate 10, and wherein substrate 10 can be the substrate of glass substrate, plastic base or other materials.Image element structure 100 is electrically connected with scan line 20 and data wire 30, and image element structure 100 comprises gate 110, capacitance electrode 120, electric capacity transparency electrode 130, lock insulating barrier 140, semi-conductor layer 150, one source pole 160, drain 165, protective layer 170 and a pixel electrode 182.
Specifically, gate 110 is configured on substrate 10.Capacitance electrode 120 is configured on substrate 10.Electric capacity transparency electrode 130 is configured on substrate 10, and covers capacitance electrode 120 and part substrate 10.Lock insulating barrier 140 is configured on substrate 10, and covers gate 110 and electric capacity transparency electrode 130.Particularly, lock insulating barrier 140 has an opening 142, and opening 142 exposes partition capacitance transparency electrode 130.Semiconductor layer 150 is configured on lock insulating barrier 140, and is positioned at the top of gate 110.Source electrode 160 is configured on lock insulating barrier 140.Drain 165 is configured on lock insulating barrier 140, and wherein source electrode 160 and drain 165 expose part of semiconductor layer 150.Protective layer 170 is configured on lock insulating barrier 140, and the electric capacity transparency electrode 130 that covering source electrode 160, drain 165, lock insulating barrier 140 and opening 142 expose.Protective layer 170 has a contact hole 172, and contact hole 172 exposes part drain 165.Pixel electrode 180 is configured on protective layer 170.Pixel electrode 180 is electrically connected through contact hole 172 and drain 165.There is an overlapping area P to form a storage capacitors Cst between the electric capacity transparency electrode 130 that the opening 142 of pixel electrode 180 and lock insulating barrier 140 exposes.
More particularly, in the present embodiment, gate 110 and capacitance electrode 120 belong to same rete, and wherein the material of gate 110 and the material of capacitance electrode 120 can be metal or alloy, are not limited in this.Particularly, the electric capacity transparency electrode 130 of the present embodiment does not cover gate 110, and the material of electric capacity transparency electrode 130 can be indium tin oxide or indium-zinc oxide.In addition, the gate 110 of the present embodiment, source electrode 160 and drain 165 form an end lock type thin-film transistor.
Because the lock insulating barrier 140 of the present embodiment does not cover electric capacity transparency electrode 130 completely, but there is the opening 142 that exposes partition capacitance transparency electrode 130, the distance therefore between pixel electrode 180 and partition capacitance transparency electrode 130 can pass through the design of the opening 142 of lock insulating barrier 140 and shortens.Moreover, due to the size of storage capacitors value be and distance between pixel electrode 180 and electric capacity transparency electrode 130 is inversely proportional to, therefore, under the Distance Shortened between pixel electrode 180 and partition capacitance transparency electrode 130, the storage capacitors Cst of the image element structure 100 of the present embodiment can increase.In brief, the design of the image element structure 100 of the present embodiment effectively can promote overall storage capacitors value.
Below only introduce the structure of image element structure 100 of the present invention, do not introduce the manufacture method of image element structure 100 of the present invention.To this, Fig. 1, Fig. 3 to Figure 11 will be coordinated describe in detail the manufacture method of the image element structure of above-described embodiment with another embodiment below.
Fig. 3 to Figure 11 is the generalized section of the image element structure step-by-step produced of the manufacture method of image element structure of the present invention.Please refer to Fig. 1 and Fig. 3, according to the manufacture method of the image element structure of the present embodiment, first, form a first metal layer 110a on a substrate 10, wherein the complete covered substrate 10 of the first metal layer 110a.Herein, the material of the first metal layer 110a is identical with the material of scan line 20, and it can be metal or alloy, is not limited in this.Substrate 10 can be the substrate of glass substrate, plastic base or other materials.
Then, please refer to Fig. 4, patterned first metal layer 110a, and form gate 110 and a capacitance electrode 120.That is, gate 110 and capacitance electrode 120 belong in fact same rete.
Then, please refer to Fig. 5, form electric capacity transparency electrode 130 on substrate 10, wherein electric capacity transparency electrode 130 covers capacitance electrode 120 and part substrate 10.It should be noted that, electric capacity transparency electrode 130 herein does not cover gate 110.In addition, the material of electric capacity transparency electrode 130 can be indium tin oxide or indium-zinc oxide.
Then, please refer to Fig. 6, form a lock insulating barrier 140 on substrate 10, wherein lock insulating barrier 140 covers gate 110 and electric capacity transparency electrode 130.Particularly, lock insulating barrier 140 has an opening 142, and opening 142 exposes partition capacitance transparency electrode 130.The generation type of opening 142 herein formed by the mode of light shield (not shown) exposure imaging, and therefore the large I of opening 142 changes with the design of light shield.
Then, please refer to Fig. 7, form semi-conductor layer 150 on lock insulating barrier 140, wherein semiconductor layer 150 is positioned at the top of gate 110.
Then, please refer to Fig. 1 and Fig. 8, form one second metal level 160a on semiconductor layer 150 with lock insulating barrier 140.Herein, the material of the second metal level 160a is identical with the material of data wire 30, and it can be metal or alloy, is not limited in this.
Then, please refer to Fig. 9, patterning second metal level 160a, and form one source pole 160 and a drain 165, wherein source electrode 160 and drain 165 expose part of semiconductor layer 150.Herein, gate 110, source electrode 160 and drain 165 form an end lock type thin-film transistor.
Afterwards, please refer to Figure 10, form a protective layer 170 on lock insulating barrier 140, wherein protective layer 170 covers the electric capacity transparency electrode 130 that source electrode 160, drain 165, lock insulating barrier 140 and opening 142 expose.Protective layer 170 has a contact hole 172, and contact hole 172 exposes part drain 165.
Finally; please refer to Figure 11; form a pixel electrode 180 on protective layer 170; wherein pixel electrode 180 is electrically connected through contact hole 172 and drain 165, and has an overlapping area P to form a storage capacitors Cst between the electric capacity transparency electrode 130 that exposes of pixel electrode 180 and opening 142.So far, the making of image element structure 100 has been completed.
By parallel plate capacitor formula: can learn in Cst=ε * A/d, the area of the overlapping area P of the size of storage capacitors Cst and pixel electrode 180 and electric capacity transparency electrode 130 is directly proportional, and and distance between pixel electrode 180 and electric capacity transparency electrode 130 be inversely proportional to.Because the lock insulating barrier 140 of the present embodiment does not cover electric capacity transparency electrode 130 completely, but there is the opening 142 that exposes partition capacitance transparency electrode 130, therefore the distance between pixel electrode 180 and partition capacitance transparency electrode 130 can pass through the design of the opening 142 of lock insulating barrier 140 and shortens, therefore the storage capacitors Cst of the image element structure 100 of the present embodiment can increase.In addition, size due to the opening 142 of the lock insulating barrier 140 of the present embodiment determined by light shield (not illustrating), therefore the design that can pass through light shield to the area of the overlapping area P of the electric capacity transparency electrode 130 increasing pixel electrode 180 and opening 142 and expose, and then improves the storage capacitors value of image element structure 100 entirety of this enforcement.In brief, the design of the image element structure 100 of the present embodiment effectively can promote overall storage capacitors value.
In sum, because lock insulating barrier of the present invention does not cover electric capacity transparency electrode completely, but there is the opening that exposes partition capacitance transparency electrode, therefore the distance between pixel electrode and partition capacitance transparency electrode shortens by the design of opening, can improve the storage capacitors value of image element structure.In addition, the present invention is the size of the opening being defined lock insulating barrier by light shield, therefore increase the area of the overlapping area of the electric capacity transparency electrode that pixel electrode and opening expose by the design of light shield, and then the storage capacitors value of image element structure entirety of the present invention can be improved.
Although the present invention discloses as above with embodiment; so itself and be not used to limit the present invention; have in any art and usually know the knowledgeable; without departing from the spirit and scope of the invention; when doing a little change and retouching, therefore the scope that protection scope of the present invention ought define with claims is as the criterion.