技术领域technical field
本发明涉及薄膜晶体管液晶显示器技术领域，尤其涉及一种薄膜晶体管液晶显示器件及其制造方法。The invention relates to the technical field of thin film transistor liquid crystal displays, in particular to a thin film transistor liquid crystal display device and a manufacturing method thereof.
背景技术Background technique
TFT-LCD(薄膜晶体管液晶显示器，Thinfilmtransistorliquidcrystaldisplay)是液晶显示器的一种，它使用薄膜晶体管技术改善影像品质，被广泛应用在电视、平面显示器及投影机上。TFT-LCD (thin film transistor liquid crystal display, Thinfilmtransistorliquidcrystaldisplay) is a kind of liquid crystal display, which uses thin film transistor technology to improve image quality, and is widely used in televisions, flat panel displays and projectors.
TFT-LCD由显示屏、背光源及驱动电路三大核心部件组成。简单说，TFT-LCD显示屏可视为两片玻璃基板中间夹着一层液晶，上层的玻璃基板带有彩色滤光膜(ColorFilter)，而下层的玻璃则有TFT晶体管镶嵌于上，在上下两片玻璃基板的外侧分别贴有偏振片。当电流通过晶体管产生电场变化，造成液晶分子偏转，藉以改变光线的偏极性，再利用偏光片决定像素(Pixel)的明暗状态。此外，上层玻璃因与彩色滤光膜贴合，每个像素(Pixel)各包含红蓝绿三颜色，这些发出红蓝绿色彩的像素便构成了显示屏上的图像画面。TFT-LCD is composed of three core components: display screen, backlight source and driving circuit. Simply put, a TFT-LCD display can be regarded as a layer of liquid crystal sandwiched between two glass substrates. The upper glass substrate has a color filter film (ColorFilter), while the lower glass has TFT transistors embedded on it. The outer sides of the two glass substrates are respectively pasted with polarizers. When the current passes through the transistor, the electric field changes, causing the liquid crystal molecules to deflect, so as to change the polarity of the light, and then use the polarizer to determine the light and dark state of the pixel (Pixel). In addition, because the upper glass is bonded with the color filter film, each pixel (Pixel) contains three colors of red, blue and green, and these pixels emitting red, blue and green colors constitute the image on the display screen.
开口率是影响TFT-LCD的显示性能的关键问题之一。开口率是指TFT-LCD显示屏光透过部分与不透过部分之比，开口率越大，亮度越高。影响开口率的主要因素是栅和源总线宽度、TFT尺寸、上下基板对盒精度、存储电容尺寸及黑矩阵尺寸等。Aperture ratio is one of the key issues affecting the display performance of TFT-LCD. The aperture ratio refers to the ratio of the light-transmitting part of the TFT-LCD display screen to the non-transmitting part. The larger the aperture ratio, the higher the brightness. The main factors affecting the aperture ratio are gate and source bus width, TFT size, upper and lower substrate alignment accuracy, storage capacitor size and black matrix size, etc.
图1所示为现有技术下的一种TFT-LCD显示屏的结构示意图，包括基板100，形成于基板100上的栅极线101a、101b和COM线102，与栅极线101a、101b相交的数据线103，所述栅极线101a、101b和数据线103限定的像素区域内形成有TFT晶体管104以及通过过孔105与TFT晶体管104的漏极电连接的像素电极106，其中，所述TFT晶体管104包括：与所栅极线电连接的栅极(由于栅极线与栅极通常在同一个工艺步骤中形成，因此二者位于同一层，并可以做成一体的)，依次形成于所述栅极上的栅绝缘层、半导体层和源/漏金属层(通常形成TFT的源极的金属与形成漏极的金属在同一个工艺步骤中形成，因此二者位于同一层，统称为源/漏金属层)，所述TFT的源极(或漏极)与所述数据线电连接(由于TFT的源极与数据线通常在同一个工艺步骤中形成，因此二者位于同一层，并可以做成一体的)。从图1中可以看出，TFT晶体管104的漏极与像素电极连接部分和栅极线101b之间通常位于彩色滤光片之下，所占基板区域107为不透光部分，没有得到有效利用，造成TFT-LCD显示屏开口率的浪费。这是由于漏极与像素电极和栅极线形成的栅漏寄生电容Cgd是引起的屏闪烁的主要诱因，所以普通的设计都是使漏极和像素电极尽可能重叠较小的面积，而且像素电极尽可能远离栅极线。因此，需要一种薄膜晶体管液晶显示器件及其制造方法，可以有效利用栅极线和漏极与像素电极连接部分的所占区域，增大TFT-LCD显示屏开口率，提高TFT-LCD显示器件的显示性能。Fig. 1 is a schematic structural diagram of a TFT-LCD display screen in the prior art, including a substrate 100, gate lines 101a, 101b and COM lines 102 formed on the substrate 100, intersecting the gate lines 101a, 101b The data line 103 of the gate line 101a, 101b and the pixel area defined by the data line 103 are formed with a TFT transistor 104 and a pixel electrode 106 electrically connected to the drain of the TFT transistor 104 through a via hole 105, wherein the The TFT transistor 104 includes: a gate electrically connected to the gate line (because the gate line and the gate are usually formed in the same process step, the two are located on the same layer and can be integrated), which are sequentially formed on The gate insulating layer, semiconductor layer and source/drain metal layer on the gate (usually the metal forming the source of the TFT and the metal forming the drain are formed in the same process step, so the two are located in the same layer, collectively referred to as source/drain metal layer), the source (or drain) of the TFT is electrically connected to the data line (since the source of the TFT and the data line are usually formed in the same process step, they are located on the same layer, and can be integrated). It can be seen from FIG. 1 that the part where the drain of the TFT transistor 104 is connected to the pixel electrode and the gate line 101b is usually located under the color filter, and the occupied substrate area 107 is an opaque part, which has not been effectively utilized. , resulting in a waste of the aperture ratio of the TFT-LCD display. This is because the gate-to-drain parasitic capacitance Cgd formed by the drain, the pixel electrode and the gate line is the main cause of screen flicker, so the common design is to make the drain and the pixel electrode overlap as small as possible, and The pixel electrodes are as far away from the gate lines as possible. Therefore, need a kind of thin film transistor liquid crystal display device and manufacturing method thereof, can effectively utilize the occupied area of gate line and drain electrode and pixel electrode connection part, increase TFT-LCD display screen aperture ratio, improve TFT-LCD display device. display performance.
发明内容Contents of the invention
本发明的目的在于提供一种薄膜晶体管液晶显示器件及其制造方法，可以有效利用栅极线和漏极与像素电极连接部分之间的所占区域，增大TFT-LCD显示屏开口率，提高TFT-LCD显示器件的显示性能。The object of the present invention is to provide a thin film transistor liquid crystal display device and a manufacturing method thereof, which can effectively utilize the occupied area between the gate line and the drain electrode and the pixel electrode connection part, increase the TFT-LCD display screen aperture ratio, and improve The display performance of TFT-LCD display devices.
为解决上述问题，本发明提供一种薄膜晶体管液晶显示器件的制造方法，包括：In order to solve the above problems, the present invention provides a method for manufacturing a thin film transistor liquid crystal display device, comprising:
在基板上形成透明公共电极及与其相连COM线和栅极线；Forming a transparent common electrode and a COM line and a gate line connected thereto on the substrate;
形成与所述栅极线和COM线相交的数据线以及在所述栅极线上方形成TFT的源极、漏极和沟道结构；forming a data line intersecting the gate line and the COM line, and forming a TFT source, drain and channel structure above the gate line;
在包含所述TFT的基板的整个表面上形成钝化层，在所述钝化层中形成露出所述TFT的部分漏极的过孔；forming a passivation layer on the entire surface of the substrate including the TFT, forming a via hole exposing a part of the drain of the TFT in the passivation layer;
在所述钝化层上形成像素电极，所述像素电极通过所述过孔与所述TFT的漏极电连接。A pixel electrode is formed on the passivation layer, and the pixel electrode is electrically connected to the drain of the TFT through the via hole.
进一步的，采用第一半灰阶掩模板在基板上形成透明公共电极及与其相连COM线和栅极线。Further, a transparent common electrode and a COM line and a gate line connected thereto are formed on the substrate by using the first half-gray scale mask.
进一步的，采用第二半灰阶掩模板在基板上形成与所述栅极线和COM线相交的数据线以及在所述栅极线上方形成TFT的源极、漏极和沟道结构。Further, a second half-gray scale mask is used to form a data line intersecting the gate line and the COM line on the substrate, and to form a source, a drain, and a channel structure of the TFT above the gate line.
进一步的，所述透明公共电极为氧化铟锡或氧化铟锌。Further, the transparent common electrode is indium tin oxide or indium zinc oxide.
进一步的，所述栅极线的宽度为8μm～10μm。Further, the gate line has a width of 8 μm˜10 μm.
进一步的，所述栅极线的材料包括Mo、Cr、W、Ti、Ta、Mo、Al及Cu中的至少一种。Further, the material of the gate line includes at least one of Mo, Cr, W, Ti, Ta, Mo, Al and Cu.
进一步的，形成所述TFT的步骤包括：采用第一半灰阶掩模板在基板上形成栅极线的同时，形成与所述栅极线一体连接的所述TFT的栅极。Further, the step of forming the TFT includes: using a first half-gray scale mask to form a gate line on the substrate, and at the same time forming a gate of the TFT integrally connected with the gate line.
进一步的，形成所述TFT的步骤还包括：Further, the step of forming the TFT also includes:
在包含所述栅极的整个基板上形成栅极绝缘层；forming a gate insulating layer on the entire substrate including the gate;
在所述栅极上的栅极绝缘层区域形成岛状有源区；forming an island-shaped active region in the gate insulating layer region on the gate;
在所述岛状有源区中形成源极和漏极。A source and a drain are formed in the island-shaped active region.
进一步的，所述钝化层为氧化硅、氮化硅、氮氧化硅或有机材料。Further, the passivation layer is silicon oxide, silicon nitride, silicon oxynitride or organic material.
相应的，本发明还提供一种薄膜晶体管液晶显示器件，包括：Correspondingly, the present invention also provides a thin film transistor liquid crystal display device, comprising:
TFT侧基板；TFT side substrate;
彩膜侧基板；Color filter side substrate;
形成于所述TFT侧基板上的透明公共电极及与其相连COM线和栅极线；A transparent common electrode formed on the TFT side substrate and a COM line and a gate line connected thereto;
与所述栅极线和COM线相交的数据线；a data line intersecting the gate line and the COM line;
形成于所述栅极线上方的TFT的源极、漏极和沟道结构；A source, drain and channel structure of a TFT formed above the gate line;
形成于所述栅极线、COM线、与其相连透明公共电极、数据线、以及TFT上的钝化层，所述钝化层有露出所述TFT的部分漏极的过孔；A passivation layer formed on the gate line, the COM line, the transparent common electrode connected thereto, the data line, and the TFT, the passivation layer has a via hole exposing a part of the drain of the TFT;
形成于所述钝化层上并通过所述过孔与所述TFT的漏极电连接的像素电极。A pixel electrode formed on the passivation layer and electrically connected to the drain of the TFT through the via hole.
与现有技术相比，本发明提供的薄膜晶体管液晶显示器件及其制造方法，通过在基板上制作透明公共电极及与其相连COM线和栅极线，增大了存储电容并减小了源漏电容Cgd对整个像素的干扰，使其可以在栅极线上制造TFT的源极和漏极，可以有效利用栅极线和漏极与像素电极连接部分之间的所占区域，增大TFT-LCD显示屏开口率，提高TFT-LCD显示器件的显示性能；进一步的，通过两道半灰阶掩模板工艺分别形成透明公共电极和与其相连COM线和栅极线以及数据线和所述栅极线上方的TFT的源极、漏极和沟道结构，大大简化工艺步骤，降低工艺成本。Compared with the prior art, the thin film transistor liquid crystal display device and its manufacturing method provided by the present invention increase the storage capacitance and reduce the source and drain by making a transparent common electrode on the substrate and connecting the COM line and the gate line with it. The interference of the capacitor Cgd to the entire pixel makes it possible to manufacture the source and drain of the TFT on the gate line, which can effectively use the area occupied by the connection between the gate line and the drain and the pixel electrode, and increase the TFT- The aperture ratio of the LCD display screen improves the display performance of the TFT-LCD display device; further, the transparent common electrode and the COM line and the gate line connected to it, as well as the data line and the gate line are respectively formed through two half-gray-scale mask processes The source, drain and channel structure of the TFT above the line greatly simplifies the process steps and reduces the process cost.
附图说明Description of drawings
图1是现有技术的薄膜晶体管液晶显示屏的结构示意图；FIG. 1 is a schematic structural view of a thin film transistor liquid crystal display in the prior art;
图2是本发明一实施例的薄膜晶体管液晶显示器件制造方法流程图；2 is a flow chart of a method for manufacturing a thin film transistor liquid crystal display device according to an embodiment of the present invention;
图3A至图3D是本发明一实施例的薄膜晶体管液晶显示器件制造工艺中的剖面结构示意图。3A to 3D are schematic cross-sectional structure diagrams of a thin film transistor liquid crystal display device manufacturing process according to an embodiment of the present invention.
具体实施方式detailed description
为使本发明的目的、特征更明显易懂，下面结合附图对本发明的具体实施方式作进一步的说明，然而，本发明可以用不同的形式实现，不应认为只是局限在所述的实施例。In order to make the purpose and features of the present invention more obvious and easy to understand, the following will further describe the specific embodiments of the present invention in conjunction with the accompanying drawings. However, the present invention can be realized in different forms, and should not be considered as being limited to the described embodiments .
如图2所示，本发明提供一种薄膜晶体管液晶显示器件的制造方法，包括：As shown in Figure 2, the present invention provides a method for manufacturing a thin film transistor liquid crystal display device, comprising:
S1，在基板上形成透明公共电极及与其相连COM线和栅极线；S1, forming a transparent common electrode and a COM line and a gate line connected to it on the substrate;
S2，形成与所述栅极线和COM线相交的数据线以及在所述栅极线上方形成TFT的源极、漏极和沟道结构；S2, forming a data line intersecting the gate line and the COM line, and forming a TFT source, drain and channel structure above the gate line;
S3，在包含所述TFT的基板的整个表面上形成钝化层，在所述钝化层中形成露出所述TFT的部分漏极的过孔；S3, forming a passivation layer on the entire surface of the substrate including the TFT, forming a via hole exposing a part of the drain of the TFT in the passivation layer;
S4，在所述钝化层上形成像素电极，所述像素电极通过所述过孔与所述TFT的漏极电连接。S4, forming a pixel electrode on the passivation layer, where the pixel electrode is electrically connected to the drain of the TFT through the via hole.
以下结合附图3A至3D对附图2中的薄膜晶体管液晶显示器件的制造方法作进一步的详细说明。The manufacturing method of the thin film transistor liquid crystal display device in Fig. 2 will be further described in detail below in conjunction with Figs. 3A to 3D.
如图3A所示，在步骤S1中，在基板300上沉积一层氧化铟锡或氧化铟锌的透明导电材料薄膜(未图示)，在透明导电材料薄膜上通过溅射或蒸发的方式沉积第一金属材料薄膜(未图示)，然后涂敷一定厚度的光刻胶膜，通过半灰阶掩模板(Half-ToneMask，简称HTM)使所述光刻胶膜曝光并显影，形成光刻胶图形，该光刻胶图形具有不同厚度的两个区域，厚度大的区域对应即将形成的栅极线301a、301b，COM线302位置，厚度小的区域对应即将形成的透明公共电极302a位置；接着根据光刻胶层刻蚀第一金属材料薄膜以及透明导电材料薄膜，使用灰化技术减薄整体光刻胶层，去除厚度小的区域的光刻胶，刻蚀其下第一金属材料薄膜，暴露出下方的明导电材料薄膜，形成透明公共电极；然后再去除厚度大的区域的多余光刻胶层，暴露出其下方的第一金属材料薄膜，形成栅极线301a、301b，COM线302以及与其相连透明公共电极302a，本实施例中在形成栅极线301a、301b的同时还可以形成与栅极线301b一体成型且电连接的栅极(未图示)。通过第一半灰阶掩模板工艺形成透明公共电极和与其相连COM线和栅极线，大大简化工艺步骤，降低工艺成本。As shown in FIG. 3A, in step S1, a layer of transparent conductive material film (not shown) of indium tin oxide or indium zinc oxide is deposited on the substrate 300, and deposited on the transparent conductive material film by sputtering or evaporation. The first metal material film (not shown), and then coated with a photoresist film of a certain thickness, the photoresist film is exposed and developed through a half-tone mask (Half-ToneMask, referred to as HTM) to form a photoresist film. Resist pattern, the photoresist pattern has two regions with different thicknesses, the thicker region corresponds to the gate line 301a, 301b, COM line 302 to be formed, and the thinner region corresponds to the transparent common electrode 302a to be formed; Next, etch the first metal material film and the transparent conductive material film according to the photoresist layer, use ashing technology to thin the overall photoresist layer, remove the photoresist in the area with a small thickness, and etch the first metal material film under it , exposing the underlying bright conductive material film to form a transparent common electrode; and then removing the excess photoresist layer in the thicker area to expose the first metal material film below it to form gate lines 301a, 301b, and COM lines 302 and the transparent common electrode 302a connected thereto. In this embodiment, a gate (not shown) integrally formed and electrically connected to the gate line 301b may also be formed while forming the gate lines 301a and 301b. The transparent common electrode and the COM line and the gate line connected thereto are formed through the first half-gray-scale mask process, which greatly simplifies the process steps and reduces the process cost.
在本发明的其他实施例中，在步骤S1中还可以通过两次普通掩模板工艺形成透明公共电极及与其相连COM线和栅极线。即：在基板300上沉积一层氧化铟锡或氧化铟锌的透明导电材料薄膜(未图示)，在透明公共电极上涂敷一定厚度的光刻胶膜，通过一次普通的透明公共电极掩模板使所述光刻胶膜曝光并显影，形成光刻胶图形；接着刻蚀光刻胶层和透明导电材料薄膜，形成透明公共电极302a；然后在包含透明公共电极的基板上，通过溅射或蒸发的方式沉积第一金属材料薄膜(未图示)，然后涂敷一定厚度的光刻胶膜，通过一次普通的栅极线掩模板使所述光刻胶膜曝光并显影，形成光刻胶图形，接着刻蚀光刻胶层和第一金属材料薄膜，形成与透明公共电极302a相连的栅极线301a、301b和COM线302。In other embodiments of the present invention, in step S1, the transparent common electrode and the COM line and the gate line connected thereto may also be formed through two ordinary mask process. That is: deposit a layer of indium tin oxide or indium zinc oxide transparent conductive material film (not shown) on the substrate 300, coat a certain thickness of photoresist film on the transparent common electrode, and pass through an ordinary transparent common electrode mask once. The template exposes and develops the photoresist film to form a photoresist pattern; then etches the photoresist layer and the transparent conductive material film to form a transparent common electrode 302a; then, on the substrate containing the transparent common electrode, by sputtering or evaporation method to deposit the first metal material thin film (not shown), and then apply a photoresist film with a certain thickness, and expose and develop the photoresist film through a common gate line mask to form a photoresist Then, the photoresist layer and the first metal material film are etched to form the gate lines 301a, 301b and the COM line 302 connected to the transparent common electrode 302a.
在后续工艺制得的薄膜晶体管液晶显示器件中，以透明公共电极302a作为下极板、栅绝缘层和/或钝化层以及其他绝缘层作为电容介质、像素电极作为上极板的存储电容，增大了制得的薄膜晶体管液晶显示器件的存储电容，减小了源漏电容Cgd对整个像素的干扰。In the thin film transistor liquid crystal display device manufactured by the subsequent process, the transparent common electrode 302a is used as the lower plate, the gate insulating layer and/or passivation layer and other insulating layers are used as the capacitor medium, and the pixel electrode is used as the storage capacitor of the upper plate. The storage capacitance of the prepared thin film transistor liquid crystal display device is increased, and the interference of the source-drain capacitance Cgd on the entire pixel is reduced.
优选的，基板300为玻璃、石英或塑料等绝缘材质。第一金属材料层可以为诸如Mo、Cr、W、Ti、Ta、Mo、Al、或Cu的单层膜，或者为选自Cr、W、Ti、Ta、Mo、Al或Cu中两种或者多种的任意组合所构成的复合膜。优选的，所述栅极线301a、301b的宽度为8μm～10μm，以保留足够的区域，使得在后续工艺中在栅极线301b上方制得的TFT的源极和漏极的投影得以落在在栅极线301a、301b的宽度区域中。Preferably, the substrate 300 is made of insulating materials such as glass, quartz or plastic. The first metal material layer can be a monolayer film such as Mo, Cr, W, Ti, Ta, Mo, Al, or Cu, or be selected from two or more of Cr, W, Ti, Ta, Mo, Al, or Cu. A composite membrane composed of any combination of various types. Preferably, the width of the gate lines 301a and 301b is 8 μm to 10 μm, so as to reserve enough area so that the projection of the source and drain of the TFT fabricated above the gate line 301b in the subsequent process can fall on the In the width region of the gate lines 301a, 301b.
如图3B所示，在步骤S2中，在包含栅极线301a、301b，COM线302以及与其相连透明公共电极302a的基板300上，可以通过两次普通掩模板工艺形成与所述栅极线301a、301b和COM线302相交的数据线303以及在所述栅极线301b上方形成TFT304的源极304a、漏极304b和沟道结构，即：首先，在包含栅极线301a、301b，COM线302以及与其相连透明公共电极302a的基板300上，通过等离子增强化学气相沉积的方式在包含与栅极线301b一体成型且电连接的栅极的基板上沉积栅绝缘层，栅绝缘层的材质为氧化物、氮化物或氧氮化合物；接着，在栅极线上方的预定义TFT区域(该区域应该为栅极线301b上方且与后续形成的数据线303的交叠处)沉积一定厚度的非晶硅(简写成“a-Si”)和重掺杂非晶硅层，涂敷一定厚度的光刻胶膜，通过一次普通的TFT掩膜板工艺使所述光刻胶膜曝光并显影，形成光刻胶图形，接着刻蚀光刻胶膜未保护的非晶硅(简写成“a-Si”)和重掺杂非晶硅层，形成岛状有源区或岛状半导体层；然后，在整个基板上沉积第二金属材料薄膜并涂敷一定厚度的光刻胶膜，通过一次普通的数据线掩模板使所述光刻胶膜曝光并显影，形成光刻胶图形，接着刻蚀光刻胶膜未保护的第二金属材料薄膜，形成与所述栅极线301a、301b和COM线302相交的数据线303以及在所述栅极线301b上方形成TFT304的源极304a、漏极304b和沟道结构。此时也就形成了位于所述栅极线301b与数据线303交叠处的栅极线上方的TFT304，包括与所述栅极线301b一体的栅极、依次形成于所述栅极上的栅绝缘层和非晶硅以及重掺杂非晶硅层、漏极304b、与所述数据线303电连接的源极304a以及和源极304a与漏极304b之间的沟道结构；所述源极304a与所述数据线303电连接。此时，形成于栅极线301b与数据线303交叠处的TFT的源极304a、漏极304b以及沟道结构全部投影在栅极线301b上，有效利用栅极线301b和漏极304b与后续形成的像素电极306连接部分之间的所占区域，增大制得的TFT-LCD显示屏开口率，提高TFT-LCD显示器件的显示性能。As shown in FIG. 3B, in step S2, on the substrate 300 including the gate lines 301a, 301b, the COM line 302 and the transparent common electrode 302a connected thereto, two common mask processes can be used to form a 301a, 301b and the data line 303 intersected by the COM line 302 and the source 304a, the drain 304b and the channel structure of the TFT 304 are formed above the gate line 301b, that is: first, in the gate line 301a, 301b, COM Line 302 and the substrate 300 connected with the transparent common electrode 302a, a gate insulating layer is deposited on the substrate including the gate integrally formed and electrically connected with the gate line 301b by means of plasma enhanced chemical vapor deposition, and the material of the gate insulating layer Oxide, nitride or oxynitride; Next, deposit a certain thickness of Amorphous silicon (abbreviated as "a-Si") and heavily doped amorphous silicon layer, coated with a certain thickness of photoresist film, and the photoresist film is exposed and developed through a common TFT mask process , form a photoresist pattern, and then etch the unprotected amorphous silicon (abbreviated as "a-Si") and the heavily doped amorphous silicon layer to form an island-shaped active region or an island-shaped semiconductor layer; Then, deposit a second metal material film on the entire substrate and coat a photoresist film with a certain thickness, expose and develop the photoresist film through a common data line mask to form a photoresist pattern, and then engrave Etch the unprotected second metal material film to form the data line 303 intersecting with the gate line 301a, 301b and the COM line 302 and form the source electrode 304a and the drain of the TFT 304 above the gate line 301b. Pole 304b and channel structure. At this time, the TFT 304 above the gate line at the intersection of the gate line 301b and the data line 303 is formed, including a gate integrated with the gate line 301b, and a gate formed on the gate in turn. Gate insulating layer and amorphous silicon and heavily doped amorphous silicon layer, drain 304b, source 304a electrically connected to the data line 303, and a channel structure between the source 304a and drain 304b; The source electrode 304a is electrically connected to the data line 303 . At this time, the source 304a, drain 304b and channel structure of the TFT formed at the intersection of the gate line 301b and the data line 303 are all projected on the gate line 301b, effectively utilizing the gate line 301b and the drain 304b The area occupied by the connected parts of the pixel electrodes 306 formed subsequently increases the aperture ratio of the manufactured TFT-LCD display screen and improves the display performance of the TFT-LCD display device.
在本发明的其他实施例中，也可以使用第二半灰阶掩模板并采用类似于步骤S1中形成栅极线301a、301b，COM线302以及与其相连透明公共电极302a的方法形成数据线303以及TFT304的源极304a、漏极304b和沟道结构，即：首先，在已经形成栅极线301a、301b，COM线302以及与其相连透明公共电极302a的基板300上依次沉积栅绝缘层、非晶硅(简写成“a-Si”)和重掺杂非晶硅层的半导体层，然后沉积第二金属材料薄膜和光刻胶层；接着，通过第二半灰阶掩模板使所述光刻胶层曝光并显影，形成数据线及TFT源漏区域和TFT沟道区域厚度不同的光刻胶图形；然后，依次刻蚀形成岛状有源区或岛状半导体层以及沟道区域，形成数据线303以及源极304a和漏极304b，源极304a和漏极304b之间为沟道结构。通过第二半灰阶掩模板工艺形成数据线303和栅极线301b上方的TFT的源极304a、漏极304b和沟道结构，可以大大简化工艺步骤，降低工艺成本。In other embodiments of the present invention, the data line 303 can also be formed by using the second half-grayscale mask and adopting a method similar to that of forming the gate lines 301a, 301b, the COM line 302 and the transparent common electrode 302a connected thereto in step S1. And the source electrode 304a, the drain electrode 304b and the channel structure of TFT304, that is: first, on the substrate 300 that has already formed the gate line 301a, 301b, the COM line 302 and the transparent common electrode 302a connected with it, deposit the gate insulating layer, non- Crystalline silicon (abbreviated as "a-Si") and a semiconductor layer of heavily doped amorphous silicon layer, and then deposit a second metal material film and a photoresist layer; then, pass the second half-grayscale mask to make the light The resist layer is exposed and developed to form photoresist patterns with different thicknesses for data lines, TFT source and drain regions, and TFT channel regions; then, sequentially etch to form island-shaped active regions or island-shaped semiconductor layers and channel regions to form The data line 303, the source electrode 304a and the drain electrode 304b, and the channel structure is formed between the source electrode 304a and the drain electrode 304b. Forming the source electrode 304a, the drain electrode 304b and the channel structure of the TFT above the data line 303 and the gate line 301b through the second half-gray scale mask process can greatly simplify the process steps and reduce the process cost.
如图3C所示，在步骤S3中，在包含所述源极304a和漏极304b的基板300的整个表面上形成钝化层(未图示)，所述钝化层为氧化硅、氮化硅、氮氧化硅或有机材料。然后通过钝化层掩模板，在所述钝化层中形成露出部分源极304a的过孔305。As shown in FIG. 3C, in step S3, a passivation layer (not shown) is formed on the entire surface of the substrate 300 including the source electrode 304a and the drain electrode 304b, and the passivation layer is silicon oxide, nitride Silicon, silicon oxynitride or organic materials. Then, a via hole 305 exposing part of the source electrode 304a is formed in the passivation layer through a passivation layer mask.
如图3D所示，在步骤S4中，在所述钝化层上沉积一定厚度的氧化铟锡或氧化铟锌透明导电材料，采用像素电极掩模板形成像素电极306，所述像素电极306通过所述过孔305与所述漏极304b电连接。As shown in Figure 3D, in step S4, a certain thickness of indium tin oxide or indium zinc oxide transparent conductive material is deposited on the passivation layer, and a pixel electrode 306 is formed by using a pixel electrode mask, and the pixel electrode 306 passes through the The via hole 305 is electrically connected to the drain 304b.
相应的，如图3D所示，本发明还提供一种薄膜晶体管液晶显示器件，包括：Correspondingly, as shown in FIG. 3D, the present invention also provides a thin film transistor liquid crystal display device, including:
TFT侧基板300；TFT side substrate 300;
形成于所述TFT侧基板上的透明公共电极302a以及与其相连的栅极线301a、301b，COM线302；The transparent common electrode 302a formed on the TFT side substrate and the gate lines 301a, 301b connected thereto, and the COM line 302;
与栅极线301a、301b和COM线302相交的数据线303；A data line 303 intersecting the gate lines 301a, 301b and the COM line 302;
形成于所述栅极线301b上方的TFT304的源极304a、漏极304b和沟道结构；The source 304a, the drain 304b and the channel structure of the TFT 304 formed above the gate line 301b;
形成于所述栅极线301a、301b、COM线302、与其相连透明公共电极302a、数据线303、以及TFT304上的钝化层，所述钝化层有露出TFT304部分漏极304b的过孔305；A passivation layer formed on the gate lines 301a, 301b, the COM line 302, the transparent common electrode 302a connected thereto, the data line 303, and the TFT 304, the passivation layer has a via hole 305 exposing a part of the drain electrode 304b of the TFT 304 ;
形成于所述钝化层上并通过所述过孔305与所述漏极304b电连接的像素电极306。A pixel electrode 306 formed on the passivation layer and electrically connected to the drain electrode 304 b through the via hole 305 .
由图1中的107以及图3D中的307所示可知，本发明提供的薄膜晶体管液晶显示器件及其制造方法，通过在基板上制作栅极线、COM线以及与其相连透明公共电极，在栅极线301a、301b上制造TFT304的源极304a和漏极304b，可以有效利用栅极线和漏极304b与像素电极连接部分的所占区域，增大TFT-LCD显示屏开口率，提高TFT-LCD显示器件的显示性能。As can be seen from 107 in FIG. 1 and 307 in FIG. 3D , the thin film transistor liquid crystal display device and its manufacturing method provided by the present invention, by making gate lines, COM lines and transparent common electrodes connected to them on the substrate, Manufacture the source electrode 304a and the drain electrode 304b of TFT304 on the pole line 301a, 301b, can effectively utilize the occupied area of gate line and drain electrode 304b and the pixel electrode connection part, increase TFT-LCD display screen opening ratio, improve TFT-LCD. The display performance of LCD display devices.
显然，本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the invention without departing from the spirit and scope of the invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.
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| CN201110391717.XACN103137555B (en) | 2011-11-30 | 2011-11-30 | Thin film transistor LCD device and manufacture method thereof |
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| CN201110391717.XACN103137555B (en) | 2011-11-30 | 2011-11-30 | Thin film transistor LCD device and manufacture method thereof |
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