CN103098174A - Dual delivery chamber design - Google Patents

Abstract

A substrate processing system includes a thermal processor or plasma generator adjacent a processing chamber. A first process gas enters the thermal processor or plasma generator. The first process gas then flows directly through a showerhead into the process chamber. A second process gas flows through a second flow path through the showerhead. The first and second process gases mix below the showerhead and deposit a material layer on a substrate below the showerhead.

Description

The dual delivery chamber design

The cross reference of related application

To be the title submitted on October 20th, 2010 be the U. S. application the 12/908th of " Dual Delivery Chamber Design(dual delivery chamber design) " to the application, the partial continuous application of No. 617, the full text content of described application is incorporated herein by reference.

Technical field

The present invention is about semiconductor wafer processing system, and more specifically about a kind of for will at least two kinds processing the gas distribution showerhead that gases are supplied to the reaction chamber of semiconductor wafer processing system.

Background technology

Semiconductor wafer processing system contains treatment chamber usually, and described treatment chamber has the pedestal for close processing region support semiconductor wafer in chamber.The chamber forming section defines the vacuum casting of processing region.Gas distributes assembly parts or shower nozzle that one or more are processed gas to be provided to processing region.But heated air and/or be gas supply RF can, this causes molecular dissociation.But mixed processing gas and described processing gas is used for carrying out some technique on wafer subsequently.The etching that these techniques can comprise for the chemical vapour deposition (CVD) of deposited film on wafer (CVD) or be used for material is removed from wafer.In certain embodiments, can switch on to form plasma with processing gas, described plasma can be carried out the technique such as plasma enhanced chemical vapor deposition (PECVD) or plasma etching on wafer.

In needing the technique of multiple gases, usually away from treatment chamber and be coupled to composition gas in the mixing chamber of shower nozzle via conduit.Admixture of gas flows subsequently and passes conduit to distribution plate, and wherein said plate contains a plurality of holes, makes admixture of gas be uniformly distributed in processing region.When admixture of gas entered processing region, the particle of energising and/or neutral radical caused depositing layer of material on wafer in the CVD reaction.

Although usually advantageously with mist before air release is to the processing region with in guaranteeing that gas is uniformly distributed to processing region, gas but tends to begin reduction or otherwise reacts in mixing chamber.Therefore, may before arriving processing region, admixture of gas cause deposition or the etching of mixing chamber, conduit and other chamber combination.In addition, byproduct of reaction may be accumulated in the gas to chamber delivery components.Until gas leaves distribution plate enters in processing region, some shower nozzles maintain two kinds of gases in runner separately until gas leaves distribution plate enters in processing region for gas being maintained in runner separately.By the runner that use separates, gas does not mix each other or reacts, until gas arrives near the processing region of wafer.

In some applications, one of precursor gas can be the neutral radical that produces in the teleprocessing chamber.Can produce neutral radical by remote thermal treatment chamber or plasma process chamber.Neutral radical can flow to shower nozzle and allot mouthful treatment chamber that flows to the wafer substrate top by the first component of shower nozzle from long-range chamber by conduit.Simultaneously, the second precursor gas can go out from source and course by second group of outlet from shower nozzle.Neutral radical provides desired chemical reaction above can being incorporated in substrate with the second precursor gas is mixed subsequently.The problem of remote plasma source is, the neutral radical of vast scale (may 80%) before arriving the wafer-process chamber by combination again.

In other embodiments, can use remote plasma source.Plasma gas can flow to shower nozzle by conduit.Plasma can flow in the treatment chamber of wafer substrate top by first group of outlet of shower nozzle.Simultaneously, the second precursor gas also can flow and pass second group of outlet from shower nozzle.Plasma provides desired chemical reaction above can being incorporated in substrate with precursor gas is mixed subsequently.Again, the problem of remote plasma source is, vast scale by the charge species of plasma generation before arriving the wafer-process chamber by combination again.

Therefore, need in the art a kind of system, described system the neutral radical of much higher ratio or plasma can be provided to substrate and will at least two kinds gases be delivered in processing region and do not mix gas before gas arrives processing region.

Summary of the invention

The present invention is about a kind of CVD treatment chamber, and described CVD treatment chamber comprises the ante-chamber of direct contiguous CVD treatment chamber.Ante-chamber can be carried out gas before processing gas to enter the CVD treatment chamber and process.In one embodiment, ante-chamber is for being configured to carry out the modular construction of various different process.Ante-chamber can be the thermal processing chamber that can comprise heater.Heater can be carried out heat treatment to precursor gas.For example, precursor gas can enter ante-chamber, and can carry out thermal dissociation to processing gas, to produce charge species and neutral radical.Neutral radical can flow in substrate processing chamber by shower nozzle subsequently.

In other embodiments, ante-chamber can comprise plasma generator.Can use various types of plasma generators, comprise: the plasma generator of capacitive coupling, induction coupling, optics or any other suitable type.Because plasma generator is positioned at directly over shower nozzle and the treatment chamber that contains substrate and pedestal is positioned under shower nozzle, so the loss of charge species is minimized.

In one embodiment, plasma generator can comprise precursor gas manifold, gas box, baffler and spacer ring.Manifold can be arranged on the gas box top and baffler can be arranged on below gas box.Can define the plasma generator chamber by the lower surface of baffler, the upper surface of shower nozzle and the interior diameter of spacer ring.The upper surface of baffler and shower nozzle is as electrode.The RF power source is coupled to baffler and with panel ground connection.

In one embodiment, shower nozzle comprises the flow path that separates of processing gas for two kinds.The first flow path can comprise the first row ingate, and described ingate extends perpendicularly to first row outlet opening treatment chamber by shower nozzle from plasma generator.The second flow path that passes shower nozzle can comprise second group of entrance and the second flow path, and described the second flow path guiding second is processed gas level and passed shower nozzle to secondary series vertical outlet hole, enters treatment chamber.The first row outlet opening can be mixed with the secondary series outlet opening, make first process gas and second process gas flow pass shower nozzle after, with the substrate contacts that is arranged on pedestal before, in place, the top mixing for the treatment of chamber.

Plasma generator is configured in to have improved directly over shower nozzle enters treatment chamber and can be used as neutral radical or the ratio of the reacting gas of charged particle.Therefore, compare with remote plasma source, neutral radical or the charged particle of much higher ratio enter treatment chamber.Because the efficient of system has improved greatly, so carry out neutral radical or the charged particle that required wafer-process only need produce much lower quantity.

In different embodiment, can plasma generator be configured to have the different interval ring according to the application for the treatment of chamber.For example, according to the material that uses, spacer ring can serve as heat conductor and/or RF insulator.These different configurations can be depending on the technique that treatment chamber is just being carried out.

Gas box can comprise hot heating unit.In one embodiment, can use the gas box heater that gas box is heated to 160 ℃.Can or heat be transferred to panel with described heat and panel isolation according to spacer materia.If heat insulation, spacer ring can be made by thermal insulation pottery (such as aluminium oxide).On the contrary, need by using the spacer ring of being made by Heat Conduction Material (such as aluminium or stainless steel) that heat is transferred to panel.

In another embodiment, spacer ring can comprise heater.Heating ring can comprise the heating element in embedded rings.Thereby also temperature sensor can be coupled to the heat that the heater adjustable ring produces.Heating element can be heated to panel approximately 200 ℃ or higher.

Treatment system of the present invention can be used for substrate " cold " to be processed, and wherein substrate keeps below 100 ℃.Cooler treatment temperature prevents any cause thermal damage of substrate.Processor can be cool by making substrate not can affect by RF substrate is remained.By panel with RF can and substrate isolates.The U.S. Patent application the 12/641st common in a review that on December 18th, 2009 submitted to, the Multi-functional heater that the Multifunctional Heater/Chiller Pedestal For Wide Range Wafer Temperature Control(of No. 819 controls for the wide region wafer temperature/cooler pedestal) disclosed a kind of temperature control pedestal, the content of described application is incorporated herein by reference.

Treatment chamber can be worked under the treatment conditions scope.The flow velocity of predecessor and oxidant can be between approximately between 10 to 40 standard liters/minute (SLM).Temperature range can be between approximately between 30 ℃ to 200 ℃.Pressure limit can be approximately 2 to 100Torr.

These conditions of work may be particularly suitable for some K cryogenic treatment step.For example, can deposit low temperature SiO liner on the photoresist layer of patterning.Depositing temperature must hang down to avoid the damage to the photoresist material very much.In this application, temperature can be lower than 100 ℃.In these embodiments, can make cooling fluid pass pedestal so that pedestal and processing substrate temperature are maintained approximately between 50 ℃ to 100 ℃.

In other embodiments, treatment chamber can be used for heat treatment and/or plasma treatment.Pedestal can comprise heater, described heater heated substrates and treatment chamber, and described heating can cause the thermal response in treatment chamber.In the plasma pattern, by dielectric insulator, shower nozzle is separated with the pedestal electricity.Apply RF power to produce plasma in treatment chamber between pedestal and shower nozzle.

Description of drawings

Fig. 1 illustrates the sectional view for the treatment of system;

Fig. 2 illustrates the sectional view for the treatment of system, and wherein mark is processed gas flow;

Fig. 3 illustrates the sectional view of the upper gas distribution plate of shower nozzle;

Fig. 4 illustrates the vertical view of the upper gas distribution plate of shower nozzle;

Fig. 5 illustrates the sectional view of the lower gas distribution plate of shower nozzle;

Fig. 6 illustrates the vertical view of the lower gas distribution plate of shower nozzle;

Fig. 7 illustrates for the control system of controlling the heat that is produced by heater;

Fig. 8 illustrates the hot-fluid footpath that is intercepted by spacer ring;

Fig. 9 illustrates the hot-fluid footpath of passing spacer ring;

Figure 10 illustrates the hot-fluid footpath from the heater in spacer ring;

Figure 11 illustrates the embodiment of the outlet opening of shower nozzle.

Embodiment

The content of this announcement is about being used for the modularization precursor gas treatment system of chemical vapour deposition (CVD) (CVD).With reference to figure 1, show the sectional view of the embodiment of CVD treatment system 101.Theshower nozzle 107 thatplasma process system 101 comprises ante-chamber 111,treatment chamber 121 and ante-chamber 111 is separated with treatment chamber 121.System 101 also comprisesmanifold 103,gas box 113,spacer ring 115,baffler 119,pedestal 117,insulator 129 andmain body 131.

To maintain onpedestal 117 neartreatment chamber 121 such as thesubstrate 106 of semiconductorcrystal wafer.Pedestal 117 can be in the interior vertical movement for the treatment ofchamber 121 so thatpedestal 117 be reduced to a position, described position allowsubstrate 106 when being in described dipping by in slit valve (not shown) inserthandling chamber 101 or remove from treatment chamber 101.Whenpedestal 117 is in when dipping,new substrate 106 can be positioned onpedestal 117 and will described new substrate be increased to the processing position, thussubstrate 106 is placed close to processing region.

In one embodiment,pedestal 117 can compriseheater 118 and/or cooling body 122.The U.S. Patent application the 12/641st that on December 18th, 2009 submitted to, the Multifunctional Heater/Chiller Pedestal For Wide Range Wafer Temperature Control(of No. 819 is used for the Multi-functional heater that the wide region wafer temperature controls/cooler pedestal) be incorporated herein by reference, and described U.S. Patent application discloses the additional detail of the embodiment of the relevant pedestal that comprisesheater 118 and cooling body 122.Heater 118 andcooling body 122 can be used forsubstrate 106 is maintained any temperature of wanting.

By theshower nozzle 107 activities body of regulating the flow of vital energy.In preferred embodiment of the present invention, cometreatment substrate 106 with multiple gases.These gases form processes the required admixture of gas of wafer (that is, forming deposition orchemical etching substrate 106 on wafer).In one embodiment, the distance between the upper surface of the lower surface ofshower nozzle 107 andsubstrate 106 can be approximately 0.2 to 2.0 inch.This distance of capable of regulating is so that process the hybrid optimization ofgas.Treatment chamber 121 can be configured to as annealer or plasma chamber.In heat treatment mode,insulator 129 can be made by the Heat Conduction Material (such as metal material) of same conduction.In the plasma chamber configuration,insulator 129 can be byshower nozzle 107 is made with the dielectric material thatpedestal 117 electricity separate.Can apply the RF electrical power frompower supply 124 between thepedestal 118 that can be coupled toconductor 131 and shower nozzle 107.For example, the supply of RF power can be coupled to showernozzle 107 and can be withpedestal 118 ground connection.Electric field can be with the energising of the gas intreatment chamber 121 so that gas becomes plasma.

Ante-chamber 111 can be and can be configured to carry out polytechnic modular construction.In one embodiment, ante-chamber 111 can be thermal treatment unit.In other embodiments, ante-chamber 111 can be plasma generator.Due to ante-chamber 111 design can be modular, so can ante-chamber 111 be removed and change to carry out difference in functionality according to user's needs.

In one embodiment, ante-chamber 111 is to comprise one or more heaters 303,304 thermal treatment unit.When being heated, some precursor gas are dissociable, thereby produce the neutral radical that can be used for treatment substrate.Heating-up temperature can be depending on processes the gaseous dissociation temperature.In one embodiment, thermal treatment unit can be heated to approximately 550 ℃ to 600 ℃ or higher.In other embodiments, can carry out various other techniques to produce neutral radical in ante-chamber.For example, ante-chamber can comprise for the light energy source from the solution precursor gas.If precursor gas is ozone, ozone exposure can cause the generation of oxygen base to the light of 185nm or 254nm wavelength.

In an alternate embodiment, ante-chamber 111 comprises plasma generator, and described plasma generator can be capacitively coupled to each as the lower surface of thebaffler 119 of electrode and the upper surface of shower nozzle 107.Baffler 119 can be coupled to RF power source and can be withshower nozzle 107 electrical ground.Plasma generator ante-chamber 111 volumes be spaced apart thering 115 around.Becausespacer ring 115 separates baffler 109 withshower nozzle 107, so in the present embodiment,spacer ring 115 electric insulations.In other embodiments, ante-chamber 111 can comprise the energy source of other type to produce plasma, and described energy source comprises:induction coil 112 or any other suitable energy source.

Duration of work, first processes gas can flow and pass in the volume thatmanifold 103 entersbaffler 119 tops.First processes gas distributes across the width of ante-chamber 111 bybaffler 119 and flows and pass the hole and enter ante-chamber 111.RF power produces the AC electric field betweenbaffler 119 and shower nozzle 107.The first atom of processing gas is ionized and discharges electronics, and described electronics is by RF field acceleration.Described electronics also can directly or by colliding make first to process gas ionization indirectly, thereby produces secondary electron.Electric field can produce electron avalanche, and electron avalanche produces conductive plasma because of the free electron of abundance.

With reference to figure 2, show the cross section of baseplate processing system 101, the cross section illustrates first and processes the flow path thatgas 201 and second is processed gas 202.First processes themobile manifold 103 that passes ofgas 201 also vertically passesgas box 113 to baffler 119, andbaffler 119 distributes first to process gases 201.First processes gas 201 flows and passesbaffler 119 and enter ante-chamber 111.In one embodiment,process gas 201 to first and carry out heat treatment, to produce ion and neutral radical 209.The mobileupright opening 255 that passes inshower nozzle 107 ofneutral radical 209 enterstreatment chamber 121.

Thesecond processing gas 202 can flow and passmanifold 103 and gas box 113.Thesecond processing gas 202 can flow subsequently and passspacer ring 115 to shower nozzle 107.Second processes gas 202 can entershower nozzle 107 andpass shower nozzle 107 by the flow path bottom horizontal flow sheet in a plurality of positions near overall diameter, described flow path separates with neutral radical 209 flow paths.Therefore, process betweengas 202 contactless atneutral radical 209 and second in shower nozzle 107.Second processes gas 202leaves shower nozzle 107 by the row of one onlower surface holes 255, mixes with thesecond processing gas 202 at lower surface place neutral radical 209.Theprocessing gas 202 that mixes, 209 reaction can be on thesubstrate 106 that is positioned onpedestal 117 deposited material layer.Due to the veryclose treatment chamber 121 of annealer, so fewneutral radical 209 is lost before arriving treatment chamber.

With reference to figure 3, in one embodiment, ante-chamber 111 comprises plasma generator.In the present embodiment, process the gas energising so that gas becomesplasma 203 with first.Thecharge species 210 that plasma produces can flow and pass upright opening 255 inshower nozzle 107 totreatment chamber 121, andcharge species 210 and second is processedgas 202 and mixed in treatment chamber 121.Charge species 210 and the second reaction of processing gas can cause deposited material layer on substrate 123.In one embodiment, but plasma generator capacitive coupling and can produce electric field, and described electric field is created between baffler 119 and shower nozzle 107.In other embodiments, plasma generator can be responded to coupling and can compriseinduction coil 114 inspacer ring 115.

In one embodiment,upright opening 255 can have " the length and width aspect ratio " greater than 5:1.Because the Length Ratio hole width inhole 255 is much bigger, soplasma 203 can't penetrate described hole 255.For example, length-width ratio may be greater than about 5:1.Therefore, first process thatgas charge species 209 enterstreatment chamber 121 andsubstrate 106 can not be exposed to plasma or active group (such as O, O₂, Cl or OH plasma).This feature for the treatment of chamber can be applicable to ante-chamber 111 and is some processing methods of plasma generator.In other embodiments, the length and width aspect ratio inhole 255 can be less than 5.

Because plasma generator ante-chamber 111 is orientated as verynear treatment chamber 121, so compare muchmore charge species 209arrival treatment chamber 121 with remote plasma source.The ratio that arrives thecharge species 209 for the treatment ofchamber 121 can be greater than 80%.By contrast, estimate that few plasma that is produced by remote plasma source to 20% arrives treatment chamber before deionization.Therefore,plasma process system 101 is more efficient than remote plasma treatment system.

Except thecharge species 209 from thefirst processing gas 201, also processgas 202 treatment substrates 123 with second.In one embodiment, thesecond processing gas 202 is enteringpanel 107 frontmobile pass manifold 103 and spacer ring 115.Pass although there is shown two holes thatspacer ring 115 forms, several additional bore can separate equably around spacer ring 115.In one embodiment, thesecond processing gas 202 can keep deionization.For fear of ionization, the hole design ofpassing spacer ring 115 can have high aspect ratio, and the design of described hole is served as the RF washer and prevented that first processes the ionization of gas.In one embodiment, can have 5:1 or larger aspect ratio for the second hole ofpassing spacer ring 115 of processing gas 202.The diameter in these holes can between approximately between 0.020 to 1.20 inch and the length in hole can be in the about scope of 0.100 to 6.00 inch.In other embodiments, passing the aspect ratio in the hole ofspacer ring 115 can be less than 5:1.

Second processes gas 202 flows intoshower nozzle 107 from spacer ring 115.But second processes the lower surface thatgas 202 bottom horizontal flow sheet are passed the internal volume ofshower nozzle 107 and gone outshower nozzle 107 by a row orifice flow, andsecond processes gas 202 enters intreatment chamber 121 by a described row orifice flow.In one embodiment,shower nozzle 107 has and makes two kinds to process that gas flow are passedshower nozzle 107 and not in the particular design ofshower nozzle 107 interiormixing.Shower nozzle 107 contains two assemblies, lowergas distribution plate 148 and upper gas distribution plate 150.These two plates 148,150 contain to define for two kinds processes various passages and the hole that gas 202,210 enters two different runners for the treatment ofchamber 121.

The example of 107 assemblies of shower nozzle shown in Fig. 4 to Fig. 7.Process gas and process gas with second to isolate first for seal channel and hole, lowergas distribution plate 148 and uppergas distribution plate 150 can be fused to form monomer-type shower nozzle 107 each other.Can carry out fusion by brazing, welding, adhesive or any other suitable fusion process.In other embodiments, lowergas distribution plate 148 and uppergas distribution plate 150 can be coupled, and seal (such as metal or O-ring packing) can be used for the passage of sealingnozzle 107 and hole so that the gas with various flow path is separated.Lowergas distribution plate 148 and uppergas distribution plate 150 can be made by various different materials, comprise: aluminium, aluminium alloy, stainless steel and other suitable material.

Fig. 4 illustrates the sectional view of embodiment of the lowergas distribution plate 150 of shower nozzle.Fig. 5 illustrates the plan view from above of the embodiment of lower gas distribution plate 150.Fig. 6 provides the sectional view of the embodiment of uppergas distribution plate 148, and Fig. 7 illustrates the upward view of the embodiment of upper gas distribution plate 148.Uppergas distribution plate 148 contains a plurality ofholes 604, and described a plurality ofholes 604 have the diameter of about 1.6mm and extend through pillar 605.Theseholes 604 are aimed at theperforation 210 in lower gas distribution plate 148.Lowergas distribution plate 148 also comprises a plurality ofholes 661, and described a plurality ofholes 661 are used for processing gas with second and distribute the bottom ofshower nozzle 107 from thepassage 208 between pillar 605.In one embodiment, about 600 to 2,000 holes are arranged in uppergas distribution plate 148, the configuration of thecountersunk 210 that the first gas orifice 206 in described hole and lowergas distribution plate 148 and the first gas orifice 206 are associated is mated fully.The periphery setting of thegas distributing hole 606 of thepassage 208 of gas to the lowergas distribution plate 148 around uppergas distribution plate 150 is provided, thereby has 8 holes, described hole respectively has the approximately diameter of 0.125 to 0.375 inch.

In order to assembleshower nozzle 107,bottom distribution plate 148 andtop distribution plate 150 can be fused together.In one embodiment,bottom distribution plate 148 andtop distribution plate 150 folder pincers are placed in smelting furnace together and with described assembly parts, in smelting furnace withgas distribution plate 148 and 150 brazing each other.In other embodiments, can use elastomer or metal-O-ring to be retained in gas in panel 130 or keep the separation of gas.

Withbase plate 148 and the joint oftop board 150 fusions inflange 202 and flange bracket 600.In addition,plate 148 engages on the surface 608 at the top of adjacent bores 204 and 206 with 150.Particularly, onflange 202 and flange bracket 600 fusion its outer edges 902, form fully sealing so that all gas is maintained in shower nozzle.In addition, theflange 202 of uppergas distribution plate 150 and lowergas distribution plate 148 forms circumference plenum section 900, and described circumference plenum section 900 provides gas to thegas passage 208 that is formed in lower gas distribution plate 148.Uppergas distribution plate 150 forms the top ofpassage 208, thereby forms uniformrectangular cross passage 208, the second processing gas is dispensed to the hole 204 in lower gas distribution plate 148.Hole 604 in uppergas distribution plate 150 is aimed at thehole 210 in lowergas distribution plate 148 so that first process gas can penetrate unobstructedlydistribution plate 148 and 150 both and arrive the processing region for the treatment of chamber.

In other embodiments, other showerhead configurations is also feasible.For example, shower nozzle can have smooth upper plate and lower plate.Upper plate can have the hole of processing gas for first, and lower plate can have the hole of processing gas and the second processing gas for first.As shown in Fig. 1 to Fig. 6, extend through the post of upper plate for the first hole of processing gas, the top of described post contact lower plate.In other embodiments, upper surface and the post between lower surface of shower nozzle can be made by different materials, and described material maybe can reduce other suitable material of the combination again of neutral radical or charge species such as pottery, metal.

With reference to figure 1, in one embodiment, baseplate processing system 101 also can be configured to heat treated gas and substrate.In one embodiment,heater 303 is coupled to gas box 113.Process gas 202 and flow when passinggas box 113,heater 303 heated air when second.In one embodiment,gas box 113 can heat second and processesgas 202 and reach approximately 120 ℃ to 180 ℃ or any other suitable temperature.Additional heaters 304 can be arranged in thespacer ring 115 of ante-chamber 111.Heater 304 can heat ante-chamber 111 and reach approximately temperature or any other suitable temperature of 120 ℃ to 180 ℃.

Heater 303,304 and 118 can be resistance heater, and described resistance heater is heat with electric energy conversion and reaches the flow transmission heat by conduction.Heater 303,304 and 118 can comprise resistor and can apply voltage to produce heat across resistor.In one embodiment, can regulate temperature by the one or more controllers that are coupled to heater and temperature sensor.Can be to described controller input design temperature, and can regulate and be supplied to heater 303,304 and 118 power to keep described design temperature.Temperature sensor can detect around the actual temperature of heater 303,304 and 118 treatment chamber, chamber such asgas box 113, ante-chamber 111 and pedestal 117.The temperature that detects can be transferred to controller, controller capable of regulating subsequently is supplied to heater 303,304 and 118 power to keep required design temperature.Heater 303,304 and 118 power that use can be the electrical power that electric power source provides.

In one embodiment, may wish that the heat that onlyheater 303 is produced is partitioned togas box 113 and prevents that transfer of heat is to other assembly of plasma process system 101.Gas box 113 can directly contact withspacer ring 115, and ifspacer ring 113 made by heat insulator, the heat ofgas box heater 303 can not be transferred to shower nozzle 107.With reference to figure 8, in other embodiments,spacer ring 115 can be made byheat insulator.Heater 303 is heated to the approximately temperature of 120 ℃ to 180 ℃ with gas box 113.But the insulation characterisitic ofspacer ring 115 has prevented thatheat 350 is transferred to showernozzle 107 from gas box 113.Therefore, in this configuration,shower nozzle 107 can be basically low thangas box 113 temperature.The example of insulated room spacer ring material comprises pottery (such as aluminium oxide).Because heat is transferred to showernozzle 107 bygas box 113 andspacer ring 115 fromheater 303, sogas box 113 usually will be thanshower nozzle 107 warm.Lower than gas box temperature by shower nozzle is remained, make second process gas can be too early from solution.More specifically, second process gas and can flow and pass the lower shower nozzle of temperature and enter treatment chamber with the reset condition of gas.Second processes gas can react with neutral radical or the charge species from the first processing gas subsequently.This reaction can cause the chemical vapour deposition (CVD) of material layer on substrate.

In other embodiments, may wish that transfer of heat thatheater 303 is produced is to the other parts of plasma process system 101.With reference to figure 9, ifspacer ring 115 is made by Heat Conduction Material,heat 350 will be transferred to showernozzle 107 byspacer ring 115 from gas box 113.The example of Heat Conduction Material and dielectric material comprises AIN and graphite.In other embodiments,spacer ring 115 can be made by other material with thermal conductive resin and good dielectric or RF insulator characteristic.By the heating shower nozzle, can heat second and process gas, this causes the second processing gas to dissociate into charge species before leaving shower nozzle.Can react with neutral radical or the charge species from the first processing gas from the second charge species of processing gas ion.This reaction between the ion of the ion of the first processing gas and the second processing gas can cause carrying out the chemical vapour deposition (CVD) of layer on substrate.

In another embodiment, with reference to Figure 10,spacer ring 115 can comprise embedded heating element 145.Theheat 350 thatheater 145 can be produced be transferred togas box 113 andshower nozzle 107 both.Due toheater 145 betweengas box 113 andshower nozzle 107, so heat more can be uniformly distributed to described these assemblies.In one embodiment,heater 145 can be heated tospacer ring 115 approximately 180 ℃ to 220 ℃.As above described with reference to figure 7, in one embodiment,heater 145 can be coupled to controller and temperature sensor so thatspacer ring 115 is maintained desired Temperature Setting.

In another embodiment, electric conducting material can be used for spacer ring 115.In the present embodiment, will not use plasma generator ante-chamber 111 to process the gas energising to first, can not have electric field becausebaffler 119 will be shortened topanel 107 and betweenbaffler 119 and panel 107.But can as above control the heating of the processing gas that is undertaken bygas box heater 303 and/orspacer ring heater 304 with reference to figure 8 to Figure 10, and can be with system as the CVD treatment chamber without plasma describedly.The example of conduction and heat conduction spacer ring material comprises aluminium, stainless steel and other material.

By using heater and different interval ring material, can various different modes configuringplasma treatment systems 101 process with necessity that first and second processing gas is provided.The configuration for the treatment ofsystem 101 can be depending on the processing substrate that will carry out.

In an exemplary application, treatment system can be used for two step deposition techniques.With reference to figure 1, in this application, the lid stacking portion for the treatment of chamber can be made by aluminium alloy 6061, andspacer ring 115 can conduct electricity and makes ante-chamber 111 can't be used as plasma generator.Ceramics insulator 129 can be placed betweenshower nozzle 107 andmain body 131 and isolate for RF, make betweenshower nozzle 107 andpedestal 117 and apply electric charge, and can produce plasma in treatment chamber 12.In the first drying (seasoning) step, the approximately TEOS of 200 to 1000mg/ minutes and 5 to 10slm O₂Flow and to pass both passages of ante-chamber 111 and shower nozzle 107.Under a plurality of power and frequency, apply RF power betweenshower nozzle 107 and pedestal 117.For example, 1,000 watt under high-frequency RF power and low frequency power 400 watts can be applied to treatment chamber 121.With TEOS and O₂Energising makes them become plasma, is used fordry treatment chamber 121.

After drying, can carry out the second major sedimentary step.Removable RF power makestreatment chamber 121 can be used for thermal response.The first processing gas can be two (lignocaine) silane (bis (diethylamino) silane(BDEAS) SiH in the helium carrier that passesbaffler 119 and ante-chamber 111 that flows₂(NEt₂)₂The BDEAS flow velocity can be approximately 2,000mg/ minute.The second processing gas can be has the approximately ozone of the flow velocity of 10 standard liters/minute (slm) under 5 % by weight.Processing gas can flow and pass the passage that separates bymanifold 103,gas box 113, ante-chamber 111 and shower nozzle 107.Processing gas can mix belowshower nozzle 107subsequently.Treatment chamber 121 andpedestal 117 can be maintained the approximately temperature of 50 ℃ to 100 ℃, this causes the thermal response between BDEAS and ozone.Thermal response can deposit the SiO layer on substrate 106.For this example, the deposition uniformity can be less than 1%.

In the second exemplary application, two other step deposition technique is described.In first step, treatment system can be used for the plasma enhanced chemical vapor deposition (PECVD) at major sedimentary step silicon oxide layer, and in second step, deposit tetraethoxysilane (TEOS) lid on silicon oxide layer.With reference to figure 1,spacer ring 115 can be made by dielectric material, makes ante-chamber 111 can be used as plasma generator.In main SiO deposition step, first processes gas can be under 5 % by weight with the about flow velocity of 10 standard liters/minute (slm) and enters the ozone of ante-chamber 111 chambers.Can apply RF power between the upper surface ofgas box 119 and shower nozzle 107.In one embodiment, RF power can be 1 under high frequency, the 400W under 000W and low frequency.Plasma generation flows and passes the neutral oxygen base of shower nozzle 107.Second processes gas can be mobile BDEAS and the helium that passes the second channel of shower nozzle 107.Neutral oxygen base can and deposit the SiO layer with the BDEAS reaction on substrate.

After deposition SiO layer, can deposit the TEOS lid in the second treatment step.When applying power between the upper surface ofgas box 119 andshower nozzle 107, TEOS and ozone can flow and pass ante-chamber 111.Processing gas can flow subsequently and pass shower nozzle and deposition TEOS lid on the silicon oxide layer on substrate 106.For this application, the gas box temperature can be approximately 100 ℃ to 140 ℃, and substrate temperature can be approximately 100 ℃ to 200 ℃.

In other embodiments, can use for different disposal gas and the condition of work of the processing substrate of various other types and use treatment system 101.Especially, can control respectively the temperature of ante-chamber and treatment chamber.In one embodiment, both all remain lower than approximately 150 ℃ with ante-chamber and treatment chamber.In other embodiments, ante-chamber can be used for heat treatment and can have much hot working temperature.For example, ante-chamber can be approximately 400 ℃ to 600 ℃.Also treatment chamber can be maintained the similar high temperature of 400 ℃ to 600 ℃.In other embodiments, ante-chamber can be heated to than treatment chamber heat the temperature of Duoing, or the comparable treatment chamber temperature of ante-chamber is much lower on the contrary.

In accompanying drawing formerly, for the outlet opening ofshower nozzle 107 being shown straight hole for purpose of brevity.But in other embodiments, outlet opening has difformity.For example, with reference to Figure 11, illustrate variousoutlet opening geometries 305 to 313.Outlet opening 305 has narrow top and the bottom of taper.Outlet opening 306 has narrow top and recessed ovalbottom.Outlet opening 307 has inverted conical upper, narrow cylindrical central and the bottom of taper.Outlet opening 309 has inverted conical upper, narrow cylindrical central and the oval bottom that is recessedinto.Outlet opening 311 has recessed oval upper portion, narrow cylindrical central and tapered lowerportion.Outlet opening 313 has recessed oval upper portion, narrow cylindrical central and the oval part that is recessed into.

Should be understood that and described system of the present invention with reference to specific embodiment, but can add, delete and change these embodiment and the scope that do not break away from system of the present invention.Although the system of having described comprises various assemblies, should understand well, can various other configurations be modified and be reset by these assemblies and described configuration.

Claims (22)

Translated fromChinese

1.一种装置，包括：1. A device comprising:提供耦合至喷头上表面的热腔室、耦合至所述喷头下表面的处理腔室以及在所述处理腔室中的用于支撑基板的基座；providing a thermal chamber coupled to an upper surface of the showerhead, a processing chamber coupled to a lower surface of the showerhead, and a pedestal for supporting a substrate in the processing chamber;加热所述热腔室中的第一处理气体以产生中性基；heating a first process gas in the thermal chamber to generate neutral radicals;传送所述中性基从所述热腔室经过延伸穿过所述喷头的第一列孔至所述处理腔室；conveying the neutral radicals from the thermal chamber to the processing chamber through a first column of holes extending through the showerhead;传送第二处理气体经过与所述第一列孔隔离的所述喷头中的第二列孔；delivering a second process gas through a second column of holes in the showerhead isolated from the first column of holes;将所述中性基与所述第二处理气体进行混合；以及mixing the neutral group with the second process gas; and在所述处理腔室中的所述基板上沉积材料层。A layer of material is deposited on the substrate in the processing chamber.2.如权利要求1所述的方法，其特征在于，所述方法进一步包括：2. The method of claim 1, further comprising:在所述喷头与所述基座之间施加RF功率；以及applying RF power between the showerhead and the susceptor; and在所述处理腔室中的所述基板上方产生等离子体。A plasma is generated over the substrate in the processing chamber.3.如权利要求1所述的方法，其特征在于，所述方法进一步包含：在处理期间将所述基座冷却为低于100℃。3. The method of claim 1, further comprising cooling the susceptor to less than 100°C during processing.4.如权利要求1所述的方法，其特征在于，所述方法进一步包括：4. The method of claim 1, further comprising:从所述热腔室中的加热器产生热量；generating heat from a heater in the thermal chamber;从所述热腔室热传导所述热量经过间隔环至所述喷头；以及thermally conducting the heat from the thermal chamber through a spacer ring to the showerhead; and在所述第二处理气体流动穿过所述喷头中的所述第二列孔的同时，加热所述第二处理气体。The second process gas is heated while the second process gas flows through the second column of holes in the showerhead.5.如权利要求1所述的方法，其特征在于，所述方法进一步包括：5. The method of claim 1, further comprising:通过热传导隔离环将至所述热腔室的热量隔离至所述喷头。Heat to the thermal chamber is isolated to the showerhead by a thermally conductive isolation ring.6.如权利要求1所述的装置，其特征在于，所述装置进一步包括：6. The device of claim 1, further comprising:耦合至所述间隔环或嵌入在所述间隔环内的加热器。A heater coupled to or embedded within the spacer ring.7.如权利要求1所述的装置，其特征在于，所述装置进一步包括：7. The device of claim 1, further comprising:耦合至所述热腔室的加热器。A heater coupled to the thermal chamber.8.如权利要求1所述的装置，其特征在于，所述热腔室包含：在所述热腔室中分配所述第一处理气体的阻隔板。8. The apparatus of claim 1, wherein the thermal chamber comprises a baffle plate that distributes the first process gas within the thermal chamber.9.如权利要求1所述的装置，其特征在于，所述喷头包含：所述上表面与所述下表面之间的内部体积、至所述内部体积的入口孔及第二列孔，所述第二列孔在所述下表面中供所述第二处理气体流动至所述处理腔室。9. The device of claim 1, wherein the spray head comprises: an inner volume between the upper surface and the lower surface, an inlet hole to the inner volume, and a second row of holes, the The second array of holes is in the lower surface for the second process gas to flow to the process chamber.10.如权利要求1所述的装置，其特征在于，所述喷头包含：多个凸起柱，所述多个凸起柱中的每一个各自具有通孔，所述通孔与所述第一列孔对准，所述第一列孔从所述上表面延伸至所述下表面。10. The device according to claim 1, wherein the spray head comprises: a plurality of raised posts, each of the plurality of raised posts has a through hole, and the through hole is connected to the first A row of holes is aligned, the first row of holes extending from the upper surface to the lower surface.11.如权利要求10所述的装置，其特征在于，所述多个凸起柱由陶瓷材料制成。11. The device of claim 10, wherein the plurality of raised posts are made of a ceramic material.12.一种方法，包括：12. A method comprising:提供耦合至喷头上表面的等离子体产生腔室、耦合至所述喷头下表面的处理腔室以及在所述处理腔室中的用于支撑基板的基座；providing a plasma generation chamber coupled to an upper surface of the showerhead, a processing chamber coupled to a lower surface of the showerhead, and a susceptor for supporting a substrate in the processing chamber;在所述等离子体产生腔室和所述喷头的所述上表面之间施加电功率；applying electrical power between the plasma generation chamber and the upper surface of the showerhead;对所述等离子体产生腔室中的第一处理气体通电以产生等离子体；energizing a first process gas in the plasma generation chamber to generate a plasma;邻近所述等离子体产生腔室的喷头，所述喷头具有上表面及下表面，所述喷头具有从所述上表面延伸至所述下表面的第一列孔，所述喷头的所述上表面为所述等离子体产生腔室的下电极；a showerhead adjacent to the plasma generation chamber, the showerhead having an upper surface and a lower surface, the showerhead having a first row of holes extending from the upper surface to the lower surface, the upper surface of the showerhead a lower electrode for the plasma generation chamber;处理腔室，所述喷头的所述下表面为所述处理腔室的上表面；以及a processing chamber, the lower surface of the showerhead being the upper surface of the processing chamber; and所述处理腔室内的基座，所述基座用于支撑邻近于所述喷头的所述下表面的基板。A susceptor within the processing chamber for supporting a substrate adjacent to the lower surface of the showerhead.13.如权利要求12所述的装置，其特征在于，所述装置进一步包括：13. The device of claim 12, further comprising:耦合至所述喷头的下表面的RF功率源；an RF power source coupled to the lower surface of the showerhead;其中所述基座接地。Wherein the base is grounded.14.如权利要求12所述的装置，其特征在于，所述基座包含：用于在处理期间将放置在所述基座上的基板保持为低于100℃的冷却机构。14. The apparatus of claim 12, wherein the susceptor comprises a cooling mechanism for maintaining a substrate placed on the susceptor below 100°C during processing.15.如权利要求12所述的装置，其特征在于，所述喷头包含：所述上表面与所述下表面之间的内部体积、至所述内部体积的入口孔及第二列孔，所述第二列孔在所述下表面中供所述第二处理气体流动至所述处理腔室。15. The device of claim 12, wherein the spray head comprises: an inner volume between the upper surface and the lower surface, an inlet hole to the inner volume, and a second row of holes, the The second array of holes is in the lower surface for the second process gas to flow to the process chamber.16.如权利要求12所述的装置，其特征在于，所述等离子体产生腔室的上电极为用于分配所述第一处理气体的阻隔板。16. The apparatus of claim 12, wherein the upper electrode of the plasma generation chamber is a barrier plate for distributing the first process gas.17.如权利要求12所述的装置，其特征在于，所述装置进一步包括：17. The device of claim 12, further comprising:所述上电极与所述下电极之间的间隔环，所述间隔环是介电且导热的。A spacer ring between the upper electrode and the lower electrode, the spacer ring is dielectric and thermally conductive.18.如权利要求12所述的装置，其特征在于，所述装置进一步包括：18. The device of claim 12, further comprising:所述上电极与所述下电极之间的间隔环，所述间隔环是介电且热绝缘的。A spacer ring between the upper electrode and the lower electrode, the spacer ring is dielectric and thermally insulating.19.如权利要求12所述的装置，其特征在于，所述装置进一步包括：19. The device of claim 12, further comprising:所述上电极与所述下电极之间的间隔环；以及a spacer ring between the upper electrode and the lower electrode; and耦合至所述间隔环或嵌入在所述间隔环内的加热器。A heater coupled to or embedded within the spacer ring.20.如权利要求12所述的装置，其特征在于，所述装置进一步包括：20. The device of claim 12, further comprising:耦合至所述等离子体产生腔室的加热器。A heater coupled to the plasma generation chamber.21.如权利要求12所述的装置，其特征在于，所述装置进一步包括：21. The device of claim 12, further comprising:垂直延伸穿过所述喷头的多个孔，所述孔具有大于5:1的深宽比。A plurality of holes extending vertically through the showerhead, the holes having an aspect ratio greater than 5:1.22.如权利要求12所述的装置，其特征在于，所述装置进一步包括：22. The device of claim 12, further comprising:所述上电极与所述下电极之间的间隔环；以及a spacer ring between the upper electrode and the lower electrode; and垂直延伸穿过所述间隔环的多个孔，所述孔具有大于5:1的深宽比。A plurality of holes extending vertically through the spacer ring, the holes having an aspect ratio greater than 5:1.

Images