Summary of the invention
For solving the deficiencies in the prior art, the object of the present invention is to provide a kind of high-power 1064nm near infrared laser obtaining the power output of better beam quality and Geng Gao based on battened construction.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
A kind of high-power 1064nm near infrared laser based on battened construction, it is characterized in that, comprise: laser crystal, the semiconductor laser pumping module of separation aforementioned laser crystal both sides, be arranged at the set of lenses between aforementioned laser crystal and semiconductor laser pumping module, and laserresonator, modulation device that aforementioned laser is modulated that the pump light launched by aforesaid semiconductor pump laser module forms the 1064nm laser of high light beam quality; Aforementioned laser crystal is the thin slice of lath shape, and the optical direction of pump light is within thin slice; " C " axle of aforementioned laser crystal is vertically placed or horizontal positioned; Aforementioned laser resonant cavity is made up of chamber mirror; Font light path that aforementioned laser is formed in the laser " M ".
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, aforementioned cavities mirror comprises: cylindrical mirror, level crossing, the other both sides of aforementioned cylindrical mirror and level crossing separation laser crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, aforementioned cylindrical mirror is 2, is symmetrical arranged, and symmetry axis overlaps with the symmetry axis of semiconductor laser pumping module.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, also comprise: be heat sink, aforementionedly heat sinkly to contact with the top and bottom of laser crystal thin slice.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, it is rectangular one dimension directional light that the pump light that aforesaid semiconductor pump laser module sends is converged to cross section through set of lenses, the width up and down of aforementioned one dimension directional light is the half of laser crystal thickness, and length is less than the length of laser crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, laser crystal in the middle of the semiconductor laser pumping module pumping simultaneously of aforementioned separation laser crystal both sides, or any one in two semiconductor laser pumping modules carries out independent pumping to laser crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, the centre wavelength of aforesaid semiconductor pump laser module is 808nm or 880nm.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, aforementioned laser crystal is Nd:YVO4 crystal or Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
The aforesaid high-power 1064nm near infrared laser based on battened construction, is characterized in that, aforementioned modulation device is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
The aforesaid high-power 1064nm near infrared laser based on battened construction, it is characterized in that, also comprise: diaphragm, aforementioned diaphragm is arranged in laserresonator.
Usefulness of the present invention is: by " M " font light path reasonable in design, and suitably select the radius of curvature of cylindrical mirror, can alleviate and even eliminate single order hot focus, stress birfringence and fevering sodium effect, thus utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao; Diaphragm is set in laserresonator, can further improve beam quality; In addition, when not changing laser internal structure, within the scope of laser crystal destruction value, can by improving the pump power of semiconductor laser pumping module, the power density of basic frequency laser in further increase chamber, thus obtain the output of more high-power 1064nm near-infrared laser.
Embodiment
Below in conjunction with the drawings and specific embodiments, concrete introduction is done to the present invention.
With reference to Fig. 1, the high-power 1064nm near infrared laser that the present invention is based on battened construction comprises: laser crystal 4, the semiconductor laser pumping module 1,7 of separation laser crystal 4 both sides, be arranged at the lens 2,6 between laser crystal 4 and semiconductor laser pumping module 1,7, lens 2,6 form set of lenses, and pump light semiconductor laser pumping module 1,7 to be launched forms the laserresonator of the 1064nm laser of high light beam quality, also comprises: the modulation device 9 modulated the 1064nm laser of above-mentioned high light beam quality.
Lower mask body introduces laserresonator.
With reference to Fig. 1, this laserresonator is made up of chamber mirror, is specifically made up of cylindrical mirror 3,5 and level crossing 8,10,11,12,14.Cylindrical mirror 3,5 is arranged at the side of laser crystal 4, and level crossing 8,10,11,12,14 is arranged at the opposite side of laser crystal 4.Wherein, level crossing 8,14 vertical two ends being arranged at laserresonator, level crossing 10,12 tilts 45 °, 135 ° and be arranged at the centre of laserresonator respectively, level crossing 11 in being horizontally disposed with, font light path that laser is formed in the laser " M "; Adjusting device 9 is arranged between level crossing 8,10.
In the present invention, cylindrical mirror 3,5 is symmetrical arranged, and symmetry axis overlaps with the symmetry axis of semiconductor laser pumping module 1,7.
As the preferred scheme of one, cylindrical mirror 3,5 and level crossing 8,10,11,12 are all coated with 1064nm laser high-reflecting film; Level crossing 14 is coated with 1064nm laser high transmittance film, pump light high-reflecting film.
In the present invention, laser crystal 4 is the thin slice of lath shape, and it puts into heat radiation crystal cup with after indium foil parcel, and the optical direction of pump light is within thin slice.In addition, " C " axle of laser crystal 4 is vertically placed, and " C " axle also can half-twist and horizontal positioned.
As the preferred scheme of one, laser crystal 4 is Nd:YVO4 crystal or Nd:YLF crystal, Nd:YAG crystal, Nd:Glass crystal, Yb:YAG crystal, Er:YAG crystal.
More preferably, two end faces of laser crystal 4 are all coated with pump light and the anti-reflection anti-reflection film of 1064nm laser, in order to increase its absorption to pump light.
As the preferred scheme of one, near infrared laser of the present invention also comprises heat sink (not shown).The top and bottom of heat sink and laminar laser crystal 4 contact, and can ensure effective conduction of heat.
As the preferred scheme of one, semiconductor laser pumping module 1,7 is semiconductor laser diode, its centre wavelength is 808nm, maximum power output is 30W, also can select the semiconductor laser pumping module of other centre wavelengths such as 880nm according to the difference of selected laser crystal 4.
As the preferred scheme of one, modulation device 9 is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
More preferably, two end faces of modulation device 9 are all coated with 1064nm anti-reflection film.
As the preferred scheme of one, the end face of lens 2,6 is all coated with the high transmittance film to pump light.
In the present invention, it is rectangular one dimension directional light that the pump light that semiconductor laser pumping module 1,7 sends is converged to cross section through set of lenses, as the preferred scheme of one, the width up and down of this one dimension directional light is the half of laser crystal 4 thickness, and length is less than the length of laser crystal 4.
In the present invention, the semiconductor laser pumping module 1,7 of separation laser crystal 4 both sides is the laser crystals 4 in the middle of simultaneously pumping, can also be that any one in two semiconductor laser pumping modules 1,7 carries out independent pumping to laser crystal 4.
As the preferred scheme of one, near infrared laser of the present invention also comprises diaphragm 13, and diaphragm 13 is arranged in laserresonator, in order to improve beam quality further.
With reference to Fig. 1, the operation principle of near infrared laser of the present invention is: the wire pump light that semiconductor laser pumping module 1,7 exports is converged to the end face of laser crystal 4 by lens 2,6, stimulated emission is produced after laser crystal 4 absorptive pumping light energy, the light launched forms the basic frequency laser of high beam under the modeling effect of laserresonator (being made up of cylindrical mirror 3,5 and level crossing 8,10,11,12,14), under the modulating action of modulation device 9, obtain the modulated laser of high-peak power.
Adopt near infrared laser of the present invention, when not changing laser internal structure, within the scope of laser crystal destroying value, the pump power of laser diode can also be improved, the power density of basic frequency laser in further increase chamber, thus obtain the output of more high-power mid-infrared laser.
In addition, solid near infrared laser based on battened construction of the present invention, compared to the near infrared laser based on bar-shaped working media, by " M " font light path reasonable in design, and suitably select the radius of curvature of cylindrical mirror, can alleviate and even eliminate single order hot focus, stress birfringence and fevering sodium effect, thus utilize simple slab laser structure to obtain the power output of better beam quality and Geng Gao.
It should be noted that, above-described embodiment does not limit the present invention in any form, the technical scheme that the mode that all employings are equal to replacement or equivalent transformation obtains, and all drops in protection scope of the present invention.