CN103023454A

Movatterモバイル変換

Info

Publication number: CN103023454A
Application number: CN2012105399466A
Authority: CN
Inventors: 康中波; 司朝伟; 宁瑾; 韩国威
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2012-12-13
Filing date: 2012-12-13
Publication date: 2013-04-03

Abstract

一种采用压电材料制备的阵列微机电谐振器结构，包括：一激励平板谐振器；一输出平板谐振器；多个储能平板谐振器，其为菱形矩阵式叠置，其是通过边角直接互相接触连接，其中最上面的两个储能平板谐振器与激励平板谐振器通过边角直接接触连接，最下面的两个储能平板谐振器与输出平板谐振器通过边角直接接触连接；一输入电极对，该输入电极对覆盖在激励平板谐振器上下表面；一输出电极对，该输出电极对覆盖在输出平板谐振器上下表面；一支撑锚点对，该支撑锚点对分别与激励平板谐振器和输出平板谐振器的外边角相连接，该支撑锚点对将激励平板谐振器、输出平板谐振器、多个储能平板谐振器、输入电极对和输出电极对支撑起，为悬空状；一衬底，所述支撑锚点对固定在该衬底上。

An array micro-electromechanical resonator structure prepared by piezoelectric materials, including: an exciting flat-panel resonator; an output flat-panel resonator; Direct contact and connection with each other, wherein the uppermost two energy storage slab resonators are directly connected to the excitation slab resonator through corners, and the bottom two energy storage slab resonators are directly connected to the output slab resonator through corners; An input electrode pair, the input electrode pair covers the upper and lower surfaces of the excitation slab resonator; an output electrode pair, the output electrode pair covers the upper and lower surfaces of the output slab resonator; a support anchor point pair, the support anchor point pair is respectively connected to the excitation The slab resonator is connected to the outer corners of the output slab resonator, and the pair of support anchor points will support the excitation slab resonator, the output slab resonator, multiple energy storage slab resonators, the input electrode pair and the output electrode pair. shape; a substrate on which the pair of support anchor points is fixed.

Description

Translated fromChinese

采用压电材料制备的阵列结构微机电谐振器Microelectromechanical Resonators with Array Structure Made of Piezoelectric Materials

技术领域technical field

本发明属于微电子技术领域，特别是一种采用压电材料制备的阵列结构的微机电谐振器。The invention belongs to the technical field of microelectronics, in particular to a microelectromechanical resonator with an array structure prepared by piezoelectric materials.

背景技术Background technique

现有的微机电(MEMS)谐振器，从信号传递方式上主要分为电容式和压电式两种。其中电容式MEMS谐振器采用杨氏模量较大的材料作为谐振结构，通过锚点将悬空的谐振结构固定在衬底上，在谐振结构的振动方向上设置平板电极，平板电极与谐振结构之间的间歇非常小，通常只有几十nm，静电力加载再平板电极上可以激励谐振结构振动，振动的谐振结构也会导致其与平板电极之间的间隙大小发生变化，导致平板电容值的改变，从而将谐振信号以电学的形式传递出去。其优点在于，谐振的机械材料完全悬空，仅应力与应变最小的部分被锚点固定在衬底上，能量损耗极小，具有极高的品质因数(Q值)。但是采用空气间隙电容进行电机机电耦合的能量传递方式，其机电耦合效率取决于空气间隙的大小，只有空气间隙小于20nm，才能实现较低的插入损耗，但现有工艺能实现的空气间隙在很难实现20nm的空气间隙。能量传递效率是制约电容式微机电谐振器的一个重要因素。另外，电容式谐振器的谐振频率与谐振结构的尺寸反相关，谐振频率越高，结构尺寸越小。较小的尺寸不仅仅引起工艺难度的增加，平板电容的置，信号的输入与检测也面临极大的困难。所以电容式谐振器的工作频率很难突破GHz，即使在高阶的谐振频率上达到了GHz以上，其等效阻抗也非常大，难以作为有效的谐振器进行商业应用。Existing micro-electromechanical (MEMS) resonators are mainly divided into two types, capacitive and piezoelectric, in terms of signal transmission methods. Among them, the capacitive MEMS resonator uses a material with a large Young's modulus as the resonant structure. The suspended resonant structure is fixed on the substrate through the anchor point, and a flat electrode is set in the vibration direction of the resonant structure. The connection between the flat electrode and the resonant structure The interval between them is very small, usually only a few tens of nanometers. The electrostatic force loading on the plate electrode can excite the resonant structure to vibrate. The vibrating resonant structure will also cause the gap between it and the plate electrode to change, resulting in a change in the plate capacitance value. , so that the resonance signal is transmitted in the form of electricity. Its advantage is that the resonant mechanical material is completely suspended, and only the part with the least stress and strain is fixed on the substrate by the anchor point, the energy loss is extremely small, and it has a very high quality factor (Q value). However, the energy transfer method using air gap capacitors for electromechanical coupling of motors depends on the size of the air gap. Only when the air gap is smaller than 20nm can low insertion loss be achieved. It is difficult to achieve an air gap of 20nm. Energy transfer efficiency is an important factor restricting capacitive MEMS resonators. In addition, the resonant frequency of a capacitive resonator is inversely related to the size of the resonant structure, the higher the resonant frequency, the smaller the size of the structure. The smaller size not only increases the difficulty of the process, but also faces great difficulties in the placement of plate capacitors, signal input and detection. Therefore, the operating frequency of a capacitive resonator is difficult to break through GHz. Even if the high-order resonance frequency reaches above GHz, its equivalent impedance is very large, and it is difficult to be used as an effective resonator for commercial application.

压电式微机电谐振器将驱动电极金属直接淀积在压电谐振材料表面，能够实现较大的机电能量传递，得益于压电材料的较强的机电耦合能力，可以减小插入损耗，降低动态阻抗。若采用压电材料比如AlN、石英、ZnO、PZT等，利用其压电特性可以提高输出信号强度，而且压电式MEMS谐振器的工作频率可以达到数GHz。通过调研发现，在所有适用微电子加工工艺的无机非铁电性压电材料中，AlN薄膜的表面声波速度是最高的，几乎是表面声波器件常用压电薄膜ZnO和CdS的2倍，因此，它非常适合制作当前通讯行业发展所需的GHz谐振和滤波器件。The piezoelectric MEMS resonator deposits the driving electrode metal directly on the surface of the piezoelectric resonant material, which can achieve greater electromechanical energy transfer. Thanks to the strong electromechanical coupling ability of the piezoelectric material, the insertion loss can be reduced, and the dynamic impedance. If piezoelectric materials such as AlN, quartz, ZnO, PZT, etc. are used, the output signal strength can be improved by using their piezoelectric properties, and the operating frequency of piezoelectric MEMS resonators can reach several GHz. Through research, it is found that among all inorganic non-ferroelectric piezoelectric materials suitable for microelectronic processing technology, the surface acoustic wave velocity of AlN film is the highest, almost twice that of ZnO and CdS commonly used piezoelectric films for surface acoustic wave devices. Therefore, It is very suitable for making GHz resonant and filter devices required by the development of the current communication industry.

目前看来，体压缩模式的AlN MEMS是该领域颇有前景的研究方向，其谐振频率由面内尺寸决定，只要通过设计不同尺寸的版图，就可以研制出不同频率的谐振器件，因此可以在同一衬底上实现多频压电谐振器阵列，为单片式无线通信系统奠定基础。与采用其他半导体材料如多晶硅或碳化硅材料制备的电容式谐振器件相比，压电材料具备较大的机电耦合系数，能量损耗小，能够获得更高频率、更高Q值和更低的动态阻抗，可低至几百欧姆甚至是几十欧姆的动态阻抗，更易于与50Ω特征阻抗的RF系统实现阻抗匹配，增加了其实用的可能性。但是从报道的结果来看，该结构的谐振频率仍然由压电薄膜的纵向尺寸和梳齿电极和电极间距决定，高频器件需要用到亚微米光刻技术或电子书曝光工艺，梳齿图形复杂，工艺难度较大，成品率低，因此需要开发新的器件结构。At present, AlN MEMS in bulk compression mode is a promising research direction in this field. Its resonant frequency is determined by the in-plane size. As long as layouts of different sizes are designed, resonant devices with different frequencies can be developed, so it can be used in Realization of multi-frequency piezoelectric resonator arrays on the same substrate lays the foundation for monolithic wireless communication systems. Compared with capacitive resonant devices made of other semiconductor materials such as polycrystalline silicon or silicon carbide materials, piezoelectric materials have a large electromechanical coupling coefficient, low energy loss, and can obtain higher frequency, higher Q value and lower dynamic The impedance can be as low as hundreds of ohms or even tens of ohms of dynamic impedance, and it is easier to achieve impedance matching with the RF system of 50Ω characteristic impedance, which increases the possibility of its practicality. However, judging from the reported results, the resonant frequency of the structure is still determined by the longitudinal size of the piezoelectric film and the comb-tooth electrodes and the electrode spacing. It is complex, the process is difficult, and the yield is low, so it is necessary to develop a new device structure.

相对于梳齿结构，规则的全对称结构在相同的面积下具备更高的谐振频率，仿真表明，边长5um的正方形AlN薄膜材料纵向的一阶谐振频率高达1.2GHz，而欲实现相同谐振频率的梳齿结构AlN薄膜材料，其梳齿间距小于2.5um，在工艺实现上难度较大。Compared with the comb structure, the regular fully symmetrical structure has a higher resonant frequency in the same area. The simulation shows that the first-order resonant frequency of the square AlN thin film material with a side length of 5um is as high as 1.2GHz in the longitudinal direction, and the same resonant frequency is to be achieved. The AlN thin film material with a comb tooth structure has a comb tooth spacing of less than 2.5um, which is difficult to realize in the process.

传统的压电材料谐振器，其表面需要覆盖金属电极，用来进行激励或者信号检测，振动结构上的金属电极材料，其弹性系数小，本征阻尼大，严重影响了谐振结构的品质因数。而电容式谐振器，信号的输入和传出是通过平板电容，电极与谐振结构没有直接的机械接触，不会耗散谐振结构的存储能量，因此电容式谐振器具有非常高的品质因数，也是近些年来的研究热点。但电容式谐振器受限于电机转换效率，无法实现较低的输入阻抗，由其构成的震荡器电路需要多级放大器来满足幅值条件，消耗了很大的能量。阵列结构的压电材料谐振器，只需在输入和输出谐振单元表面淀积金属，而其它谐振单元不受金属电极能量耗散的制约，当储能谐振单元数量远远大于输入和输出谐振单元时，其整个谐振器件的品质因数约等于无锚点约束和无金属淀积的单个谐振单元的品质因数，能够实现等同于电容式谐振器的品质因数，而压电材料作为谐振器的输入输出端口，该阵列结构的压电谐振器又能实现较低的等效阻抗。因此，在GHz的频率范围附近，阵列式压电谐振器具有较好的性能，能够在消费电子市场大量应用。The surface of the traditional piezoelectric material resonator needs to be covered with metal electrodes for excitation or signal detection. The metal electrode material on the vibrating structure has a small elastic coefficient and large intrinsic damping, which seriously affects the quality factor of the resonant structure. For capacitive resonators, the input and output of signals are through plate capacitors. The electrodes have no direct mechanical contact with the resonant structure and will not dissipate the stored energy of the resonant structure. Therefore, the capacitive resonator has a very high quality factor and is also research hotspot in recent years. However, the capacitive resonator is limited by the conversion efficiency of the motor and cannot achieve a low input impedance. The oscillator circuit composed of it requires multi-stage amplifiers to meet the amplitude conditions, which consumes a lot of energy. The piezoelectric material resonator of the array structure only needs to deposit metal on the surface of the input and output resonant units, while other resonant units are not restricted by the energy dissipation of metal electrodes. , the quality factor of the entire resonant device is approximately equal to the quality factor of a single resonant unit without anchor point constraints and no metal deposition, which can achieve a quality factor equivalent to that of a capacitive resonator, and the piezoelectric material is used as the input and output of the resonator port, the piezoelectric resonator of the array structure can achieve a lower equivalent impedance. Therefore, in the frequency range of GHz, the array piezoelectric resonator has better performance and can be widely used in the consumer electronics market.

发明内容Contents of the invention

本发明的目的在于，提供一种采用压电材料制备的阵列结构的MEMS谐振器结构，其谐振频率可达GHZ以上，具备小于1000Ω的等效阻抗，是极具市场竞争力的新型谐振器件。The purpose of the present invention is to provide a MEMS resonator structure with an array structure made of piezoelectric materials, whose resonant frequency can reach above GHZ, has an equivalent impedance less than 1000Ω, and is a new type of resonant device with great market competitiveness.

本发明提供一种采用压电材料制备的阵列微机电谐振器结构，包括：The invention provides an array microelectromechanical resonator structure prepared by piezoelectric materials, including:

一激励平板谐振器；an excitation of the slab resonator;

一输出平板谐振器；an output plate resonator;

多个储能平板谐振器，该多个储能平板谐振器为菱形矩阵式叠置，其是通过边角直接互相接触连接，其中最上面的两个储能平板谐振器与激励平板谐振器通过边角直接接触连接，最下面的两个储能平板谐振器与输出平板谐振器通过边角直接接触连接；A plurality of energy storage slab resonators, the plurality of energy storage slab resonators are stacked in a diamond-shaped matrix, which are directly connected to each other through the corners, wherein the two uppermost energy storage slab resonators and the excitation slab resonator pass through The corners are directly contacted and connected, and the bottom two energy storage plate resonators are directly connected to the output plate resonators through the corners;

一输入电极对，该输入电极对覆盖在激励平板谐振器上下表面；a pair of input electrodes, the pair of input electrodes covering the upper and lower surfaces of the exciting flat resonator;

一输出电极对，该输出电极对覆盖在输出平板谐振器上下表面；An output electrode pair, the output electrode pair covers the upper and lower surfaces of the output flat panel resonator;

一支撑锚点对，该支撑锚点对分别与激励平板谐振器和输出平板谐振器的外边角相连接，该支撑锚点对将激励平板谐振器、输出平板谐振器、多个储能平板谐振器、输入电极对和输出电极对支撑起，为悬空状；A pair of support anchor points, the pair of support anchor points are respectively connected to the outer corners of the excitation planar resonator and the output planar resonator, and the pair of support anchor points will excite the planar resonator, the output planar resonator, and multiple energy storage planar resonators The device, the input electrode pair and the output electrode pair are supported in a suspended shape;

一衬底，所述支撑锚点对固定在该衬底上。A substrate to which the pair of support anchors is secured.

附图说明Description of drawings

为进一步说明本发明的技术内容，以下结合实施例及附图详细说明如后，其中：In order to further illustrate the technical content of the present invention, the following detailed description is as follows in conjunction with the embodiments and accompanying drawings, wherein:

图1为本发明第一实施例的阵列结构图；Fig. 1 is the array structural diagram of the first embodiment of the present invention;

图2为本发明第二实施例的阵列结构图；Fig. 2 is the array structural diagram of the second embodiment of the present invention;

图3为图1所示的第一实施例的阵列结构谐振时产生应变的示意图。FIG. 3 is a schematic diagram of strain generated when the array structure of the first embodiment shown in FIG. 1 resonates.

具体实施方式Detailed ways

请参阅图1所示，本发明提供一种采用压电材料制备的阵列结构的MEMS谐振器，包括：Please refer to shown in Fig. 1, the present invention provides a kind of MEMS resonator adopting the array structure that piezoelectric material is prepared, comprising:

一激励平板谐振器11，该激励平板谐振器11上下表面覆盖金属电极，为输入电极对3；An excitationplanar resonator 11, the upper and lower surfaces of the excitationplanar resonator 11 are covered with metal electrodes, which areinput electrode pairs 3;

一输出平板谐振器13，该输出平板谐振器11上下表面覆盖金属电极，为输出电极对4；Anoutput slab resonator 13, the upper and lower surfaces of theoutput slab resonator 11 are covered with metal electrodes, which is theoutput electrode pair 4;

多个储能平板谐振器12，该多个储能平板谐振器12与激励平板谐振器11和输出平板谐振器13通过边角直接接触连接，形成菱形矩阵式结构，该菱形矩阵式阵列结构的大小可以根据对谐振器品质因数的需求设计，品质因数要求越大，也就需要越大的阵列；A plurality of energystorage slab resonators 12, the plurality of energystorage slab resonators 12 are directly connected to theexcitation slab resonator 11 and theoutput slab resonator 13 through corners to form a diamond matrix structure, the diamond matrix array structure The size can be designed according to the requirements for the quality factor of the resonator. The greater the quality factor requirement, the larger the array is required;

一支撑锚点对2，该支撑锚点对2分别与激励平板谐振器11和输出平板谐振器13的外边相连接；A pair of support anchor points 2, the pair ofsupport anchor points 2 are respectively connected to the outer edges of theexcitation planar resonator 11 and theoutput planar resonator 13;

一衬底5，该衬底5与支撑锚点对2相连接，固定支撑锚点对2使多个储能平板谐振器12、激励平板谐振器11和输出平板谐振器13组成的菱形矩阵式阵列结构悬空。Asubstrate 5, thesubstrate 5 is connected to the supportanchor point pair 2, and the supportanchor point pair 2 is fixed so that a plurality of energystorage slab resonators 12,excitation slab resonators 11 andoutput slab resonators 13 form a rhombus matrix The array structure is left floating.

本发明的阵列结构微机电谐振器激励方式为正弦信号激励，在输入电极对3上加载一与谐振器谐振频率相同频率的交流信号，压电材料制备的激励平板谐振器11在静电力的作用下，产生应变，其厚度发生周期性变化，振动能量以声表面波的形式向外扩散。一部分振动能量通经过与之相连接的支撑锚点对2，在衬底5上耗散掉；一部分能量传递到其上下表面覆盖的构成输入电极对3的金属上，变成热能耗散掉；还有相当一部分能量传递到与其相邻的储能平板谐振器12上，并传递到其他谐振单元，激励多个储能平板谐振器12和输出平板谐振器13振动，振动使激励平板谐振器11、多个储能平板谐振器12和输出平板谐振器13发生体应变，变形示意图如图3所示。The excitation mode of the array structure micro-electromechanical resonator of the present invention is a sinusoidal signal excitation, and an AC signal of the same frequency as the resonance frequency of the resonator is loaded on theinput electrode pair 3, and the excitationflat plate resonator 11 prepared by piezoelectric material is under the action of electrostatic force Under this condition, strain is generated, its thickness changes periodically, and the vibration energy spreads outward in the form of surface acoustic waves. Part of the vibration energy is dissipated on thesubstrate 5 through the pair of supportinganchor points 2 connected to it; part of the energy is transferred to the metal forming theinput electrode pair 3 covered by its upper and lower surfaces, and becomes heat energy and dissipated; There is also a considerable part of the energy transferred to the adjacent energy storageflat resonator 12, and transferred to other resonance units, exciting a plurality of energy storageflat resonators 12 and outputflat resonator 13 to vibrate, and the vibration makes the excitationflat resonator 11 1. A plurality of energystorage slab resonators 12 andoutput slab resonators 13 undergo bulk strain, and the deformation schematic diagram is shown in FIG. 3 .

受迫振动的输出平板谐振器13，由于其压电材料的性质决定了当其体积发生应变时，在上下表面会积累电荷，形成电势差。这个电势差通过输出电极对4以电学形式传递出去。谐振时，输出平板谐振器13存储的部分能量也通过输出电极对4、支撑锚点对2和储能平板谐振器12耗散。Due to the nature of the piezoelectric material of theoutput plate resonator 13 that is forced to vibrate, when its volume is strained, charges will accumulate on the upper and lower surfaces to form a potential difference. This potential difference is transmitted electrically via the pair ofoutput electrodes 4 . During resonance, part of the energy stored in theoutput slab resonator 13 is also dissipated through theoutput electrode pair 4 , the supportanchor point pair 2 and the energystorage slab resonator 12 .

多个储能平板谐振器12是阵列式MEMS谐振器的主要能量存储单元。其存储的能量主要通过相邻的谐振单元向外耗散，而不受到锚点和上下表面金属的影响，一个谐振周期内，其存储的最大势能与耗散的总能量之比非常高，在GHz的谐振频率下，该存储能量与耗散能量的比值可高达几千到几万，也就是说器品质因数可达到几千甚至几万。A plurality of energystorage slab resonators 12 are the main energy storage units of the arrayed MEMS resonator. The stored energy is mainly dissipated outward through the adjacent resonant unit without being affected by the anchor point and the metal on the upper and lower surfaces. In a resonant cycle, the ratio of the maximum potential energy stored to the total energy dissipated is very high. At the resonant frequency of GHz, the ratio of the stored energy to the dissipated energy can be as high as several thousand to tens of thousands, that is to say, the device quality factor can reach several thousand or even tens of thousands.

多个储能平板谐振器12、激励平板谐振器11和输出平板谐振器13相当于串联的谐振单元，其总的品质因数的倒数等于各谐振单元的品质因数的倒数和。其中多个储能平板谐振器12具有较高的品质因数，激励平板谐振器11和输出平板谐振器13的品质因数较低，当储能平板谐振器12的谐振单元的数量远大于励平板谐振器11和输出平板谐振器13的谐振单元数量时，整个阵列式谐振器的品质因数近似等于多个储能平板谐振器12中单个谐振单元品质因数的阵列子单元个数倍。A plurality of energystorage slab resonators 12 ,exciting slab resonators 11 andoutput slab resonators 13 are equivalent to series resonant units, and the reciprocal of their total quality factor is equal to the sum of the reciprocals of the quality factors of each resonant unit. Wherein a plurality of energystorage slab resonators 12 have a higher quality factor, and the quality factors of theexcitation slab resonator 11 and theoutput slab resonator 13 are lower, when the number of resonant units of the energystorage slab resonator 12 is much larger than the excitation slab resonance When the number of resonant units of theresonator 11 and theoutput slab resonator 13 is large, the quality factor of the entire array resonator is approximately equal to the number of array subunits of the quality factor of a single resonant unit in multiple energystorage slab resonators 12 .

本发明的阵列式MEMS谐振器的谐振结构由多个相同的子谐振单元通过边角直接接触连接，构成阵列的形式组成。子谐振单元可以采用全对称谐振结构，如圆形、正方形、六边形等，不同的子谐振单元形状决定了阵列的排列形式，图1是一个正方形子单元构成的阵列式MEMS谐振器的谐振结构，图2是一个圆形子单元构成的阵列式MEMS谐振器的谐振结构。构成的阵列的大小决定了阵列式MEMS谐振器品质因数，对于一个2乘以2结构的MEMS阵列式谐振器，其输入平板谐振器11具有一个谐振子单元，输出平板谐振器13具有一个谐振子单元，多个储能平板谐振器12具有两个谐振单元，这里假设输入平板谐振器11和输出平板谐振器13的品质因数为Q1，单个储能平板谐振器12的品质因数为Q2，那么总的阵列谐振器的品质因数为2Q1Q2/(Q1+Q2)；对于一个3乘以3结构的MEMS阵列式谐振器，其输入平板谐振器11具有一个谐振子单元，输出平板谐振器13具有一个谐振子单元，多个储能平板谐振器12具有七个谐振单元，那么总的阵列谐振器的品质因数为9Q1Q2/(7Q1+2Q2)；对于一个n乘以n结构的MEMS阵列式谐振器，其输入平板谐振器11具有一个谐振子单元，输出平板谐振器13具有一个谐振子单元，储能平板谐振器12具有n²-2个谐振单元，那么总的阵列谐振器的品质因数约为n²Q2，整个阵列谐振器的品质因数提高了约n²倍。The resonant structure of the array type MEMS resonator of the present invention is composed of a plurality of identical sub-resonant units directly contacted and connected through corners to form an array. The sub-resonant unit can adopt a fully symmetrical resonant structure, such as circular, square, hexagonal, etc. The shape of the different sub-resonant unit determines the arrangement of the array. Figure 1 shows the resonance of an array MEMS resonator composed of a square sub-unit. Structure, Figure 2 is a resonant structure of an array MEMS resonator composed of circular subunits. The size of the formed array determines the quality factor of the arrayed MEMS resonator. For a MEMS array resonator with a 2 by 2 structure, theinput panel resonator 11 has a resonator subunit, and theoutput panel resonator 13 has a resonator unit, a plurality of energystorage slab resonators 12 have two resonant units, here it is assumed that the quality factor of theinput slab resonator 11 and theoutput slab resonator 13 is Q1, and the quality factor of a single energystorage slab resonator 12 is Q2, then the total The quality factor of the array resonator is 2Q1Q2/(Q1+Q2); For a MEMS array resonator with a 3 by 3 structure, itsinput slab resonator 11 has a resonator subunit, and theoutput slab resonator 13 has a resonance Sub-units, a plurality of energystorage slab resonators 12 have seven resonant units, so the quality factor of the total array resonator is 9Q1Q2/(7Q1+2Q2); for an n multiplied by the MEMS array resonator of n structure, its Theinput slab resonator 11 has a resonant subunit, theoutput slab resonator 13 has a resonant subunit, and the energystorage slab resonator 12 has n² -2 resonant units, so the quality factor of the total array resonator is about n² Q2, the quality factor of the whole array resonator is improved by about n² times.

本发明的阵列式MEMS谐振器的谐振结构采用的制备材料为压电材料，该种材料可以在电学激励下产生应变，也会在机械振动引起应变时，在表面积累电荷，形成电势差，具备较低的等效阻抗。压电材料可以采用多种材料，如AlN、石英、ZnO、PZT等。The preparation material used in the resonant structure of the array type MEMS resonator of the present invention is a piezoelectric material, which can generate strain under electrical excitation, and also accumulate charges on the surface when strain is caused by mechanical vibration, forming a potential difference. Low equivalent impedance. Various materials can be used for the piezoelectric material, such as AlN, quartz, ZnO, PZT and so on.

本发明采用的衬底5的材料要求具有较高的杨氏模量，使得从谐振结构传递到锚点的能量能够大部分被反射，从而降低能量的耗散，提高整个阵列式MEMS谐振其的品质因数。The material of thesubstrate 5 used in the present invention is required to have a higher Young's modulus, so that most of the energy transmitted from the resonant structure to the anchor point can be reflected, thereby reducing energy dissipation and improving the resonance performance of the entire array MEMS. Quality factor.

以上所述，仅是本发明的实施例而已，并非对本发明作任何形式上的的限制，凡是依据本发明技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案范围之内，因此本发明的保护范围当以权利要求书为准。The above description is only an embodiment of the present invention, and does not limit the present invention in any form. Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still belong to the present invention. Within the scope of the technical solution, the protection scope of the present invention should be determined by the claims.

Claims

1. array microelectromechanicresonator resonator structure that adopts piezoelectric preparation comprises:

The dull and stereotyped resonator of one excitation;

The dull and stereotyped resonator of one output;

The dull and stereotyped resonator of a plurality of energy storage, the dull and stereotyped resonator of these a plurality of energy storage is that the rhombus matrix form is stacked, it is directly to contact with each other connection by the corner, wherein the dull and stereotyped resonator of uppermost two energy storage directly contacts by the corner with the dull and stereotyped resonator of excitation and is connected, and the dull and stereotyped resonator of nethermost two energy storage directly contacts by the corner with the dull and stereotyped resonator of output and is connected;

One input electrode pair, this input electrode is to covering the dull and stereotyped resonator upper and lower surface of excitation;

One output electrode pair, this output electrode is to covering the dull and stereotyped resonator upper and lower surface of output;

One supports anchor point pair, this support anchor point is to being connected with the outer corners of the dull and stereotyped resonator of excitation with the dull and stereotyped resonator of output respectively, this support anchor point to will encourage the dull and stereotyped resonator of dull and stereotyped resonator, output, the dull and stereotyped resonator of a plurality of energy storage, input electrode to output electrode to supporting, be hanging shape;

One substrate, described support anchor point is to being fixed on this substrate.

2. the array microelectromechanicresonator resonator structure of employing piezoelectric according to claim 1 preparation, the quantity of the dull and stereotyped resonators of wherein said a plurality of energy storage is greater than 7.

3. the array microelectromechanicresonator resonator structure of employing piezoelectric according to claim 1 preparation, the dull and stereotyped resonator of wherein said a plurality of energy storage is in full accord with the dull and stereotyped resonator of excitation and the dull and stereotyped resonator shape size of output, is circular or polygonal full symmetrical configuration.

4. the array MEMS resonator structure of employing piezoelectric according to claim 3 preparation, the dull and stereotyped resonator of wherein said energy storage and the dull and stereotyped resonator of excitation be connected contact area that dull and stereotyped resonator is connected less than 1/10 of single energy storage flat board resonator area.

5. the array MEMS resonator structure of employing piezoelectric according to claim 4 preparation, the dull and stereotyped resonator of wherein said a plurality of energy storage is piezoelectric with the material of the dull and stereotyped resonator of excitation and the dull and stereotyped resonator of output, and the equivalent input impedance of array micro-electro-mechanical resonator is less than 1000 Ω.

6. the array MEMS resonator structure of employing piezoelectric according to claim 1 preparation, wherein said support anchor point pair is identical with the material of the dull and stereotyped resonator of energy storage, the dull and stereotyped resonator of excitation and the dull and stereotyped resonator of output, adopts Young's modulus greater than the material preparation of 90Gpa.

7. the array MEMS resonator structure of employing piezoelectric according to claim 1 preparation, wherein said substrate adopts Young's modulus greater than the material preparation of 90Gpa, this substrate and input electrode to and output electrode between electric insulation.

8. the array MEMS resonator structure of employing piezoelectric according to claim 1 preparation, wherein said input electrode to the right material of output electrode be golden, aluminium or nickel billon, its thickness is less than 500nm.