技术领域technical field
本发明属于太阳能技术领域，尤其涉及一种太阳能电池及其制备方法。The invention belongs to the technical field of solar energy, and in particular relates to a solar cell and a preparation method thereof.
背景技术Background technique
采用P型硅片生产太阳能电池是当今发展的主流。早在20世纪60年代就制备出P型电池片，经过改进生产设计工艺，如金字塔结构，浅结扩散及印制铝背场等旨在减少光损失和增加光生载流子收集效率的措施，从而提高电池片的光电转化效率。The use of P-type silicon wafers to produce solar cells is the mainstream of today's development. As early as the 1960s, P-type solar cells were prepared. After improving the production design process, such as pyramid structure, shallow junction diffusion and printed aluminum back field, etc., measures aimed at reducing light loss and increasing photogenerated carrier collection efficiency, Thereby improving the photoelectric conversion efficiency of the battery sheet.
单结太阳能电池的理论转换效率为49%，扣除不可避免的复合机制造成的损失及俄歇效应最终所能达到的极限效率约为29%，但受硅片中硼氧复合体的影响目前主流工业化生产的P型硅太阳电池的实际光电转化效率仍较低，要想在不增加成本的情况下进一步提高已非常困难。于是人们开始把目光投向少数载流子寿命比P型硅高得多的N型硅，并取得了很大的进展。The theoretical conversion efficiency of a single-junction solar cell is 49%. After deducting the loss caused by the inevitable recombination mechanism and the Auger effect, the ultimate efficiency that can be achieved is about 29%. However, due to the influence of the boron-oxygen complex in the silicon wafer, the current mainstream The actual photoelectric conversion efficiency of industrially produced P-type silicon solar cells is still low, and it is very difficult to further improve it without increasing costs. So people began to turn their attention to N-type silicon whose minority carrier lifetime is much higher than that of P-type silicon, and great progress has been made.
目前N型硅太阳能电池结构比较有代表性主要有SchottSolar公司的N+NP型太阳电池。N型硅太阳电池的平均效率比P型硅的效率要高，但其工艺目前还不成熟；且该N+NP背结电池的光电转化效率仍较低。该N+NP型太阳电池的制备方法复杂，制备成本高。At present, the N-type silicon solar cell structure is more representative mainly the N+ NP type solar cell of SchottSolar Company. The average efficiency of N-type silicon solar cells is higher than that of P-type silicon solar cells, but its technology is still immature; and the photoelectric conversion efficiency of the N+ NP back-junction cells is still low. The preparation method of the N+ NP type solar cell is complicated and the preparation cost is high.
发明内容Contents of the invention
本发明解决了现有技术中存在的N+NP背结电池的光电转化效率低、制备成本高的技术问题。The invention solves the technical problems of low photoelectric conversion efficiency and high preparation cost of the N+ NP back junction cell in the prior art.
本发明提供了一种太阳能电池，所述太阳能电池从下至上依次包括金属铝层、SiO2钝化层、N型单晶硅衬底、本征非晶硅层、N+型非晶硅层、透明导电层和银电极；所述N型单晶硅衬底与N+型非晶硅层形成同型异质结，金属铝层与N型单晶硅衬底通过点接触形成P-N结The invention provides a solar cell, which comprises a metal aluminum layer, aSiO2 passivation layer, an N-type monocrystalline silicon substrate, an intrinsic amorphous silicon layer, and an N+ -type amorphous silicon layer from bottom to top. , a transparent conductive layer and a silver electrode; the N-type single crystal silicon substrate and the N+ type amorphous silicon layer form a homogeneous heterojunction, and the metal aluminum layer and the N-type single crystal silicon substrate form a PN junction through point contact
本发明还提供了所述太阳能电池的制备方法，包括以下步骤：The present invention also provides a method for preparing the solar cell, comprising the following steps:
A、在N型单晶硅衬底的背面沉积SiO2钝化层；A, on the back side of N-type monocrystalline silicon substrate deposition SiO2 passivation layer;
B、在SiO2钝化层上印刷金属铝层，然后通过激光辐射使金属铝层与N型单晶硅衬底点接触形成P-N结；B. Print a metal aluminum layer on theSiO2 passivation layer, and then use laser radiation to make the metal aluminum layer point-contact with the N-type single crystal silicon substrate to form a PN junction;
C、在N型单晶硅衬底的正面通过等离子增强化学气相沉积法依次形成本征非晶硅层和N+型非晶硅层；C. On the front side of the N-type single crystal silicon substrate, an intrinsic amorphous silicon layer and an N+ type amorphous silicon layer are sequentially formed by plasma-enhanced chemical vapor deposition;
D、在N+型非晶硅层表面通过溅射法形成透明导电层，然后在透明导电层表面印刷银电极。D. Forming a transparent conductive layer by sputtering on the surface of the N+ -type amorphous silicon layer, and then printing silver electrodes on the surface of the transparent conductive layer.
本发明提供的太阳能电池，一方面通过在N型单晶硅衬底正面采用带隙更宽的本征非晶硅，增强了短波效应，提高入射光线的能量利用率，从而提高光电转化效率；另一方面通过在N型单晶硅衬底背面形成SiO2钝化层，降低单晶硅衬底与金属铝层的接触面积，从而降低载流子的复合速率，提高光电转化效率。本发明提供的太阳能电池的制备方法，N+型非晶硅层通过PECVD（等离子增强化学气相沉积）工艺形成，电池背面P-N结通过激光烧结形成，工艺时间大大缩短，正在降低工艺时间的同时降低能耗，制备成本得到大大降低。The solar cell provided by the present invention, on the one hand, uses intrinsic amorphous silicon with a wider bandgap on the front of the N-type single crystal silicon substrate to enhance the short-wave effect and improve the energy utilization rate of incident light, thereby improving the photoelectric conversion efficiency; On the other hand, by forming aSiO2 passivation layer on the back of the N-type single crystal silicon substrate, the contact area between the single crystal silicon substrate and the metal aluminum layer is reduced, thereby reducing the recombination rate of carriers and improving the photoelectric conversion efficiency. In the preparation method of the solar cell provided by the present invention, the N+ type amorphous silicon layer is formed by PECVD (Plasma Enhanced Chemical Vapor Deposition) process, and the PN junction on the back of the cell is formed by laser sintering, the process time is greatly shortened, and the process time is being reduced at the same time. Energy consumption and preparation cost are greatly reduced.
附图说明Description of drawings
图1是本发明提供的太阳能电池的结构示意图。Fig. 1 is a schematic structural diagram of a solar cell provided by the present invention.
具体实施方式detailed description
为了使本发明所解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
具体地，本发明提供了一种太阳能电池，如图1所示，所述太阳能电池从下至上依次包括金属铝层8、SiO2钝化层7、N型单晶硅衬底5、本征非晶硅层4、N+型非晶硅层3、透明导电层2和银电极1；所述N型单晶硅衬底5与N+型非晶硅层3形成同型异质结，金属铝层8与N型单晶硅衬底5之间通过点接触形成有P-N结6。Specifically, the present invention provides a solar cell. As shown in FIG. 1, the solar cell includes a metal aluminum layer 8, aSiO2 passivation layer 7, an N-type single crystal silicon substrate 5, an intrinsic An amorphous silicon layer 4, an N+ type amorphous silicon layer 3, a transparent conductive layer 2 and a silver electrode 1; the N type single crystal silicon substrate 5 forms a homogeneous heterojunction with the N+ type amorphous silicon layer 3, and the metal A PN junction 6 is formed between the aluminum layer 8 and the N-type single crystal silicon substrate 5 through point contact.
本发明提供的太阳能电池，一方面通过在N型单晶硅衬底正面采用带隙更宽的本征非晶硅，增强了短波效应，提高入射光线的利用率，从而提高光电转化效率；另一方面通过在N型单晶硅衬底背面形成SiO2钝化层，降低单晶硅衬底与金属铝层的接触面积，从而降低载流子的复合速率，提高光电转化效率。The solar cell provided by the present invention, on the one hand, uses intrinsic amorphous silicon with a wider bandgap on the front of the N-type single crystal silicon substrate, which enhances the short-wave effect and improves the utilization rate of incident light, thereby improving the photoelectric conversion efficiency; On the one hand, by forming aSiO2 passivation layer on the back of the N-type single crystal silicon substrate, the contact area between the single crystal silicon substrate and the metal aluminum layer is reduced, thereby reducing the recombination rate of carriers and improving the photoelectric conversion efficiency.
本发明中，金属铝层8其厚度为10-20μm。SiO2钝化层7位于金属铝层8与N型单晶硅衬底5之间，能有效降低单晶硅衬底5与金属铝层8的接触面积，从而降低载流子的复合速率。所述SiO2钝化层的厚度为100-200nm。In the present invention, the thickness of the metal aluminum layer 8 is 10-20 μm. TheSiO2 passivation layer 7 is located between the metal aluminum layer 8 and the N-type single crystal silicon substrate 5, which can effectively reduce the contact area between the single crystal silicon substrate 5 and the metal aluminum layer 8, thereby reducing the recombination rate of carriers. The thickness of theSiO2 passivation layer is 100-200nm.
N型单晶硅衬底（N-C-Si）为本领域技术人员所公知的各种硅片，本发明中没有特殊性限定。优选情况下，所述N型单晶硅衬底的厚度为200±20μm。更优选情况下，N型单晶硅衬底电阻率为1-100Ω·cm，少子的寿命为100μs-1ms。N-type monocrystalline silicon substrates (N-C-Si) are various silicon wafers known to those skilled in the art, and are not specifically limited in the present invention. Preferably, the thickness of the N-type single crystal silicon substrate is 200±20 μm. More preferably, the resistivity of the N-type single crystal silicon substrate is 1-100 Ω·cm, and the lifetime of the minority carrier is 100 μs-1 ms.
本征非晶硅层（i-a-Si:H）4作为N型单晶硅衬底5与N+型非晶硅层3之间的缓冲层，能有效减小异质结界面态密度。所述本征非晶硅层（i-a-Si:H）的光学带隙为1.70-1.74eV，能增强短波效应，提高入射光线的利用率，从而提高光电转化效率。本发明中，所述本征非晶硅层的厚度为5-20nm。The intrinsic amorphous silicon layer (ia-Si:H) 4 serves as a buffer layer between the N-type single crystal silicon substrate 5 and the N+ -type amorphous silicon layer 3 , which can effectively reduce the density of the heterojunction interface states. The optical bandgap of the intrinsic amorphous silicon layer (ia-Si:H) is 1.70-1.74eV, which can enhance the short-wave effect, improve the utilization rate of incident light, and thus improve the photoelectric conversion efficiency. In the present invention, the thickness of the intrinsic amorphous silicon layer is 5-20 nm.
N+型非晶硅层（N+-a-Si:H）为本领域技术人员所公知，本发明中不再赘述。具体地，所述N+型非晶硅层的厚度为5-20nm。The N+ -type amorphous silicon layer (N+ -a-Si:H) is well known to those skilled in the art, and will not be repeated in the present invention. Specifically, the thickness of the N+ -type amorphous silicon layer is 5-20 nm.
所述透明导电层2位于N+型非晶硅层3表面，其厚度为50-120nm。透明导电层可采用现有技术中常用的各种透明导电薄膜，例如可以采用氧化铟锡薄膜层（SnO2:In，缩写为ITO）或掺铝的氧化锌薄膜层（ZnO:Al，缩写为AZO）。The transparent conductive layer 2 is located on the surface of the N+ type amorphous silicon layer 3, and its thickness is 50-120nm. The transparent conductive layer can adopt various transparent conductive films commonly used in the prior art, for example, an indium tin oxide film layer (SnO2 :In, abbreviated as ITO) or an aluminum-doped zinc oxide film layer (ZnO:Al, abbreviated as ITO) can be used. AZO).
所述银电极1位于透明导电层2表面，且与透明导电层电连接，用于收集太阳能电池内部电流。所述银电极的厚度为5-10μm，线宽为100-150μm，线间距为2-3mm。The silver electrode 1 is located on the surface of the transparent conductive layer 2 and is electrically connected with the transparent conductive layer for collecting the internal current of the solar cell. The thickness of the silver electrode is 5-10 μm, the line width is 100-150 μm, and the line spacing is 2-3 mm.
本发明中，铝金属层在激光加热下与N型单晶硅衬底发生反应，形成Si-Al合金，构造所述P-N结。所述P-N结的个数根据实际需要进行选择。优选情况下，P-N结的个数为100-200个，但不局限于此。In the present invention, the aluminum metal layer reacts with the N-type single crystal silicon substrate under laser heating to form a Si-Al alloy to construct the P-N junction. The number of the P-N junctions is selected according to actual needs. Preferably, the number of P-N junctions is 100-200, but not limited thereto.
作为本领域技术人员的公知常识，所述太阳能电池的金属铝层的表面也印刷有银电极（附图中未示出）。虽然金属铝层能导电，但铝与焊带焊接过程中会出现虚点，焊接效果比较差，易导致断路现象产生，因此直接采用金属铝层而不印刷银电极后续封装时无法满足焊接要求。As common knowledge of those skilled in the art, the surface of the metal aluminum layer of the solar cell is also printed with silver electrodes (not shown in the drawings). Although the metal aluminum layer can conduct electricity, there will be virtual spots during the welding process of aluminum and ribbon, the welding effect is relatively poor, and it is easy to cause an open circuit. Therefore, the direct use of the metal aluminum layer without printing silver electrodes for subsequent packaging cannot meet the welding requirements.
本发明还提供了所述太阳能电池的制备方法，包括以下步骤：The present invention also provides a method for preparing the solar cell, comprising the following steps:
A、在N型单晶硅衬底的背面沉积SiO2钝化层；A, on the back side of N-type monocrystalline silicon substrate deposition SiO2 passivation layer;
B、在SiO2钝化层上印刷金属铝层，然后通过激光烧结使金属铝层与N型单晶硅衬底点接触形成P-N结；B. Print a metal aluminum layer on theSiO2 passivation layer, and then make the metal aluminum layer point contact with the N-type single crystal silicon substrate to form a PN junction by laser sintering;
C、在N型单晶硅衬底的正面通过等离子增强化学气相沉积法（PECVD）依次形成本征非晶硅层和N+型非晶硅层；C. On the front side of the N-type single crystal silicon substrate, the intrinsic amorphous silicon layer and the N+ type amorphous silicon layer are sequentially formed by plasma enhanced chemical vapor deposition (PECVD);
D、在N+型非晶硅层表面通过溅射法形成透明导电层，然后在透明导电层表面印刷银电极。D. Forming a transparent conductive layer by sputtering on the surface of the N+ -type amorphous silicon layer, and then printing silver electrodes on the surface of the transparent conductive layer.
优选情况下，对N型单晶硅衬底背面进行沉积SiO2钝化层之前，还需对其进行RCA清洗。所述RCA清洗的目的是为了去除所述N型单晶硅衬底表面的氧化层、油污和各种杂质，其具体步骤为本领域技术人员所公知，本发明中不再赘述。Preferably, before depositing the SiO2 passivation layer on the back of the N-type single crystal silicon substrate, it needs to be cleaned by RCA. The purpose of the RCA cleaning is to remove the oxide layer, oil and various impurities on the surface of the N-type single crystal silicon substrate. The specific steps are well known to those skilled in the art and will not be repeated in the present invention.
更优选情况下，还包括在RCA清洗之前对N型单晶硅衬底的正面进行蚀刻的步骤，所述蚀刻液为碱性溶液，例如NaOH或KOH。蚀刻完成后，N型单晶硅衬底的表面形成比较有规则的金字塔型结构，增加了表面的陷光效应，降低了入射光的反射，从而有效提高入射光的利用率。More preferably, it also includes a step of etching the front side of the N-type single crystal silicon substrate before RCA cleaning, and the etching solution is an alkaline solution, such as NaOH or KOH. After the etching is completed, the surface of the N-type single crystal silicon substrate forms a relatively regular pyramid structure, which increases the light trapping effect of the surface and reduces the reflection of incident light, thereby effectively improving the utilization rate of incident light.
根据本发明的方法，在清洗干燥完成的N型单晶硅衬底的背面沉积SiO2钝化层。所述沉积SiO2钝化层为湿氧法，其具体步骤包括：将N形单晶硅衬底置于石英管中，通入水蒸气和氧气，加热至900℃在N形单晶硅衬底表面形成SiO2薄膜。According to the method of the present invention, aSiO2 passivation layer is deposited on the back of the cleaned and dried N-type single crystal silicon substrate. The deposition ofSiO2 passivation layer is a wet oxygen method, and its specific steps include: placing the N-shaped single crystal silicon substrate in a quartz tube, feeding water vapor and oxygen, heating to 900 ° C on the N-shaped single crystal silicon substrate ASiO2 film is formed on the surface.
根据本发明的方法，形成所述SiO2钝化层后，然后在其表面印刷金属铝层。所述印刷金属铝所采用的印刷方法为本领域技术人员所公知，例如可以采用丝网印刷，本发明中没有特殊限定。According to the method of the present invention, after theSiO2 passivation layer is formed, a metal aluminum layer is printed on its surface. The printing method used for printing the metal aluminum is well known to those skilled in the art, for example, screen printing can be used, which is not particularly limited in the present invention.
所述金属铝层位于SiO2钝化层表面，然后采用激光烧结（LFC）金属铝层表面，使激光烧结区域的金属铝熔融并渗透穿过SiO2钝化层与N型单晶硅衬底接触，即形成所述P-N结。本发明中，激光烧结的条件包括：激光波长为380-1200nm,加热温度为800-1400℃，光斑大小为100-200μm，烧结时间为1-5s。The metal aluminum layer is located on the surface of theSiO2 passivation layer, and then the surface of the metal aluminum layer is laser sintered (LFC), so that the metal aluminum in the laser sintering area melts and penetrates through theSiO2 passivation layer and the N-type single crystal silicon substrate contact, that is, the PN junction is formed. In the present invention, the laser sintering conditions include: the laser wavelength is 380-1200nm, the heating temperature is 800-1400°C, the spot size is 100-200μm, and the sintering time is 1-5s.
根据前述步骤形成P-N结后，即完成硅片的背结制作，然后对N型单晶硅衬底的正面进行处理。具体地，先通过化学气相沉积法在N型单晶硅衬底的正面沉积本征非晶硅层，然后沉积N+型非晶硅层。其中，沉积本征非晶硅层的步骤包括将N型单晶硅衬底置于等离子体增强化学气相沉积室中，在N型单晶硅衬底温度为170-200℃下，以硅烷和氢气作为反应气体在N型单晶硅衬底上沉积厚度为5-20nm的本征非晶硅层。After the PN junction is formed according to the above steps, the back junction of the silicon wafer is completed, and then the front side of the N-type single crystal silicon substrate is processed. Specifically, an intrinsic amorphous silicon layer is first deposited on the front surface of an N-type single crystal silicon substrate by chemical vapor deposition, and then an N+ -type amorphous silicon layer is deposited. Wherein, the step of depositing the intrinsic amorphous silicon layer includes placing the N-type single crystal silicon substrate in a plasma-enhanced chemical vapor deposition chamber, and using silane and Hydrogen is used as a reaction gas to deposit an intrinsic amorphous silicon layer with a thickness of 5-20 nm on an N-type single crystal silicon substrate.
形成本征非晶硅层后，无需取出产品，再通入含有硅烷、磷化氢和氢气的反应气体，在本征非晶硅层上沉积厚度为5-20nm的N+型非晶硅层。After the intrinsic amorphous silicon layer is formed, there is no need to take out the product, and then pass through the reaction gas containing silane, phosphine and hydrogen to deposit an N+ type amorphous silicon layer with a thickness of 5-20nm on the intrinsic amorphous silicon layer .
目前，现有技术中例如N+NP型电池中，N+型单晶硅层通过在高温扩散炉中采用扩散法制备，工艺耗时长达40-45min；同时扩散过程中高温工艺对硅片表面损伤较大。而本发明中，本征非晶硅层和N+型非晶硅层均通过PECVD工艺在低温下形成，降低了对硅片表面的损伤，工艺时间得到大大缩短。At present, in the prior art such as N+ NP type batteries, the N+ type single crystal silicon layer is prepared by the diffusion method in a high temperature diffusion furnace, and the process takes as long as 40-45 minutes; The damage is relatively large. However, in the present invention, both the intrinsic amorphous silicon layer and the N+ -type amorphous silicon layer are formed at low temperature by PECVD process, which reduces the damage to the surface of the silicon wafer and greatly shortens the process time.
本发明中，沉积本征非晶硅层时，硅烷的流量为2scc，氢气的气体流量为20-40scc。沉积N+型非晶硅层时，硅烷的气体流量为2scc，磷化氢的气体流量为10-15scc，氢气的气体流量为40-100scc。更优选情况下，所述磷化氢采用1vol%PH3。In the present invention, when depositing the intrinsic amorphous silicon layer, the flow rate of silane is 2scc, and the gas flow rate of hydrogen is 20-40scc. When depositing the N+ type amorphous silicon layer, the gas flow rate of silane is 2scc, the gas flow rate of phosphine is 10-15scc, and the gas flow rate of hydrogen is 40-100scc. More preferably, the phosphine uses 1 vol% PH3 .
根据本发明的方法，最后在N+型非晶硅层表面采用溅射法形成透明导电层，并在透明导电层表面印刷银电极。所述溅射法可采用磁控溅射完成，包括将正面形成有本征非晶硅层和N+型非晶硅层的N型单晶硅衬底置于真空溅射室中，以ITO或AZO为靶材，在N+型非晶硅层表面溅射厚度为50-120nm、透过率≥85%、电阻率数量级为10-4Ω·cm的透明导电层。According to the method of the present invention, a transparent conductive layer is finally formed on the surface of the N+ type amorphous silicon layer by sputtering, and silver electrodes are printed on the surface of the transparent conductive layer. The sputtering method can be completed by magnetron sputtering, including placing an N-type single crystal silicon substrate with an intrinsic amorphous silicon layer and an N+ -type amorphous silicon layer on the front side in a vacuum sputtering chamber, and using ITO Or AZO is used as the target, and a transparent conductive layer with a thickness of 50-120nm, a transmittance ≥ 85%, and a resistivity of the order of 10-4 Ω·cm is sputtered on the surface of the N+ -type amorphous silicon layer.
所述银电极的印刷方法可采用现有技术中常用的各种方法，例如可以采用丝网印刷、电阻热蒸发或电子束蒸发，本发明没有特殊限定。The printing method of the silver electrode can adopt various methods commonly used in the prior art, such as screen printing, resistance thermal evaporation or electron beam evaporation, which are not particularly limited in the present invention.
本发明提供的太阳能电池的制备方法，工艺简单易于实施，且工艺耗时较短。The preparation method of the solar cell provided by the invention has a simple and easy-to-implement process, and the process takes less time.
实施例1Example 1
（1）采用厚度为220μm，电阻率为10Ω·cm，少子寿命为1ms的N型单晶硅片作为衬底，采用NaOH溶液对衬底的正面进行异性蚀刻，使其表面凹凸化，然后进行RCA清洗，清洗之后甩干。(1) Use an N-type single crystal silicon wafer with a thickness of 220 μm, a resistivity of 10 Ω cm, and a minority carrier lifetime of 1 ms as the substrate, and use NaOH solution to perform anisotropic etching on the front side of the substrate to make the surface concave-convex, and then carry out RCA wash, rinse and spin dry.
（2）衬底背面钝化：将N形单晶硅衬底置于石英管中，通入水蒸气和氧气，加热至900℃在所述N形单晶硅衬底表面形成厚度为120nm的SiO2薄膜。(2) Substrate backside passivation: place the N-shaped single crystal silicon substrate in a quartz tube, pass in water vapor and oxygen, and heat to 900°C to form SiO with a thickness of 120nm on the surface of the N-shaped single crystal silicon substrate2 films.
（3）LFC：采用丝网印刷工艺在N型衬底背面的SiO2薄膜上印刷金属Al层，形成厚度为15μm的金属铝层；然后激光烧结金属铝层，使金属铝层与N型衬底硅片点接触，形成100个P-N结；激光烧结的条件包括：激光波长为500nm,加热温度为1000℃，光斑大小为150μm，烧结时间为1s。(3) LFC: Print a metal Al layer on the SiO2 film on the back of the N-type substrate by screen printing to form a metal aluminum layer with a thickness of 15 μm; then laser sinter the metal aluminum layer to make the metal Al layer and the N-type substrate The bottom silicon wafer is point-contacted to form 100 PN junctions; the laser sintering conditions include: the laser wavelength is 500nm, the heating temperature is 1000°C, the spot size is 150μm, and the sintering time is 1s.
（4）PECVD：将步骤（3）的硅片放入PECVD室内，加热到170°C，导入氢气，进行等离子放电，清洗硅片表面；然后导入SiH4和H2的混合气体（其中SiH4流量为2scc，H2流量为30scc），硅片温度保持在170℃下在硅片的正面沉积厚度为10nm的本征非晶硅层（i-a-Si:H）；然后导入含有SiH4、1vol%PH3和H2的混合气体（其中，SiH4流量为2scc，1vol%PH3流量为12scc，H2流量为60scc），硅片温度保持在170°C下在本征非晶硅层沉积厚度为10nm的N+型非晶硅层（N+-a-Si:H）。(4) PECVD: Put the silicon wafer in step (3) into the PECVD chamber, heat it to 170°C, introduce hydrogen gas, perform plasma discharge, and clean the surface of the silicon wafer; then introduce the mixed gas of SiH4 and H2 (wherein SiH4 The flow rate is 2scc, the flow rate of H2 is30scc ), the temperature of the silicon wafer is kept at 170°C, and an intrinsic amorphous silicon layer (ia-Si:H) with a thickness of 10nm is deposited on the front side of the silicon wafer; Mixed gas of %PH3 and H2 (the flow rate of SiH4 is 2scc, the flow rate of 1vol%PH3 is 12scc, and the flow rate of H2 is 60scc), the silicon wafer temperature is kept at 170°C to deposit the intrinsic amorphous silicon layer N+ -type amorphous silicon layer (N+ -a-Si:H) with a thickness of 10 nm.
（5）电极制备：将步骤（4）的硅片置于真空溅射室中，以氧化铟锡为靶材，在N+型非晶硅层表面磁控溅射厚度为100nm、透过率≥85%、电阻率数量级为2×10-4Ω·cm的ITO层，然后丝网印刷厚度为8μm，线宽为100μm，线间距为2mm的银电极，得到本实施例的太阳能电池S1，具有图1所示结构。(5) Electrode preparation: Place the silicon wafer in step (4) in a vacuum sputtering chamber, use indium tin oxide as the target, and magnetron sputter on the surface of the N+ type amorphous silicon layer with a thickness of 100nm and a transmittance of 100nm. ≥85%, an ITO layer with a resistivity on the order of 2×10-4 Ω·cm, and then screen-print silver electrodes with a thickness of 8 μm, a line width of 100 μm, and a line spacing of 2 mm to obtain the solar cell S1 of this embodiment, It has the structure shown in Figure 1.
实施例2Example 2
采用与实施例1相同的步骤制备本实施例的太阳能电池S2，不同之处在于：The same steps as in Example 1 were used to prepare the solar cell S2 of this example, the difference being that:
步骤（2）中，将N形单晶硅衬底置于石英管中，通入水蒸气和氧气，加热至900℃在所述N形单晶硅衬底表面形成厚度为150nm的SiO2薄膜。In step (2), the N-shaped single crystal silicon substrate is placed in a quartz tube, water vapor and oxygen are introduced, heated to 900° C., and a SiO2 film with a thickness of 150 nm is formed on the surface of the N-shaped single crystal silicon substrate.
实施例3Example 3
采用与实施例1相同的步骤制备本实施例的太阳能电池S3，不同之处在于：The same steps as in Example 1 were used to prepare the solar cell S3 of this example, the difference being that:
步骤（3）中，金属铝层的厚度为20μm，P-N的个数为150个。In step (3), the thickness of the metal aluminum layer is 20 μm, and the number of P-N is 150.
实施例4Example 4
采用与实施例1相同的步骤制备本实施例的太阳能电池S4，不同之处在于：The same steps as in Example 1 were used to prepare the solar cell S4 of this example, the difference being that:
步骤（4）中，沉积本征非晶硅时，硅片温度为200℃，本征非晶硅层的厚度为20nm；沉积N+型非晶硅时，硅片温度为200℃，N+型非晶硅层的厚度为20nm。In step (4), when depositing intrinsic amorphous silicon, the silicon wafer temperature is 200°C, and the thickness of the intrinsic amorphous silicon layer is 20nm; when depositing N+ type amorphous silicon, the silicon wafer temperature is 200°C, and the N+ The thickness of the amorphous silicon layer is 20nm.
实施例5Example 5
采用与实施例1相同的步骤制备本实施例的太阳能电池S5，不同之处在于：The same steps as in Example 1 were used to prepare the solar cell S5 of this example, the difference being that:
步骤（4）中，透明导电层为AZO层，厚度为120nm；银电极的厚度为10μm，线宽为150μm，线间距为3mm。In step (4), the transparent conductive layer is an AZO layer with a thickness of 120 nm; the silver electrode has a thickness of 10 μm, a line width of 150 μm, and a line spacing of 3 mm.
对比例1Comparative example 1
将进行清洗制绒后的的N型单晶硅片载入扩散炉中通过扩散法制备N+顶电场，温度为850℃，扩散后方阻为40Ω/□。将扩散后的片子载入PECVD中，然后通入硅烷和氨气，450℃下在电池片的正面镀一层厚度为100nm的SiNx减反膜，然后在电池片的背面丝网印刷Al金属层，正面和背面均印刷Ag电极，850℃下烧结，得到本实施例的N+NP太阳能电池样品DS1。The N-type single crystal silicon wafer after cleaning and texturing was loaded into a diffusion furnace to prepare an N+ top electric field by a diffusion method, the temperature was 850°C, and the resistance after diffusion was 40Ω/□. Load the diffused sheet into PECVD, then pass through silane and ammonia gas, coat a layer of SiNx anti-reflection film with a thickness of 100nm on the front of the cell at 450°C, and then screen print Al metal on the back of the cell layer, printed Ag electrodes on both the front and back, and sintered at 850°C to obtain the N+ NP solar cell sample DS1 of this embodiment.
性能测试：Performance Testing:
将太阳能电池样品S1-S5和DS1采用Endeas公司的QC120CA的I-V测试仪进行测试。测试结果如表1所示。The solar cell samples S1-S5 and DS1 were tested by an I-V tester QC120CA of Endeas Company. The test results are shown in Table 1.
表1Table 1
注：上表1中，所述工艺耗时是指从制绒清洗后的硅片到成品电池片的工艺耗时。Note: In the above Table 1, the process time consumption refers to the process time consumption from the silicon wafer after texturing and cleaning to the finished cell.
由上表1的测试结果可以看出，本发明提供的太阳能电池样品S1-S5的光电转化效率高达16.87%以上，明显优于对比例1的电池样品DS1；另外，本发明中，所述太阳能电池的制备工艺简单，耗时短，大大缩短工艺时间。As can be seen from the test results in Table 1 above, the photoelectric conversion efficiency of the solar cell samples S1-S5 provided by the present invention is as high as 16.87%, which is significantly better than the cell sample DS1 of Comparative Example 1; in addition, in the present invention, the solar cell The preparation process of the battery is simple and time-consuming, which greatly shortens the process time.
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227241A (en)* | 2013-04-10 | 2013-07-31 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-faced crystalline silicon solar cell |
| TW201511300A (en)* | 2013-09-11 | 2015-03-16 | Inst Nuclear Energy Res Atomic Energy Council | Method for preparing aluminum metal electrode with doped yttrium or boron atom |
| CN106159022B (en)* | 2015-03-27 | 2018-03-27 | 比亚迪股份有限公司 | A kind of crystal silicon solar cell sheet and preparation method thereof |
| CN109004053B (en)* | 2017-06-06 | 2024-03-29 | 通威太阳能（成都）有限公司 | Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof |
| CN111725350B (en)* | 2019-03-19 | 2024-03-08 | 中国科学院宁波材料技术与工程研究所 | A method to improve the passivation performance of polysilicon passivation contact structures in solar cells |
| CN110289321A (en)* | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | Preparation method of PERC solar cell with back electrode laser sintered |
| CN110212039A (en)* | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN113964228B (en)* | 2021-02-08 | 2023-09-26 | 长沙壹纳光电材料有限公司 | Heterojunction solar cell and preparation method and application thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (en)* | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101447518A (en)* | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (en)* | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101447518A (en)* | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| Publication number | Publication date |
|---|---|
| CN102956723A (en) | 2013-03-06 |
| Publication | Publication Date | Title |
|---|---|---|
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