Background technology
For some TT﹠C system or portable equipment, often need to show and setting-up time.At present, there is multiple real-time timepiece chip that this class function is provided on the market.This programmable real-time timepiece chip is built-in programmable calendar clock and certain RAM memory, be used for setting and the holding time, the other general built-in leap year bucking-out system of clock chip, timing is very accurate, because crystal oscillator can be subject to the impact of temperature, in order to guarantee that clock is in the different zone of temperature, the areal Various Seasonal has an accurately timing, the clock chip that has also extra design temperature test and treatment circuit, be used for feeding back to crystal oscillator, realize temperature compensation function.The temperature compensation clock is low in energy consumption, adopts the reserce cell power supply, can work former of system's end points.These advantages of real-time clock so that its extensive use with need the time showing occasion.
Summary of the invention
In order to solve owing to layout design is unreasonable, the problem that causes the temperature compensated clock chip design, the invention provides a kind of temperature compensation clock chip domain structure,, described temperature compensated clock chip layout is comprised of the 1st domain district, the 2nd domain district, the 3rd domain district, the 4th domain district, the 5th domain district, the 6th domain district, the 7th domain district, the 8th domain district and the 9th domain district;
Described the 1st domain district is EEPROM domain district, and described EEPROM domain district is driven by EEPROM and EEPROM and forms.
Described the 2nd domain district is automatic control figure temperature compensating crystal oscillator domain district; described automatic control figure temperature compensating crystal oscillator domain district is comprised of control circuit, capacitor array, switch arrays and amplifier, and each part has independently guard ring.
Described the 3rd domain district is 4 bit DAC domain districts, and described DAC domain district is comprised of electric resistance array and switch arrays, has designed guard ring.
Described the 4th domain district is temperature detection domain district, described be temperature detection domain district by, temperature measurement circuit domain, amplifier domain, voltage buffering domain and resistance trim domain and form temperature measurement circuit domain common centroid.
Described the 5th domain district is comparator domain district, has designed independently guard ring.
Described the 6th domain district is benchmark domain district, specifically comprises current reference domain and voltage reference domain, and triode common centroid in the described benchmark domain has independently guard ring.
Described the 7th domain district is 8 ADC domain districts, specifically comprises 8 domains and reference voltage buffering.
Described the 8th domain district is digital control domain district, specifically comprises and external communication module domain, test mode control circuit domain, RAM domain.
Described the 8th domain district is input/output interface domain district, specifically comprises 12 parallel input/output interfaces.
Fig. 1 is embodiment of the invention temperature compensation clock chip domain structure schematic diagram.