CN102910575A - Manufacture method of polymer nano channel - Google Patents
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- CN102910575A CN102910575ACN2012104470914ACN201210447091ACN102910575ACN 102910575 ACN102910575 ACN 102910575ACN 2012104470914 ACN2012104470914 ACN 2012104470914ACN 201210447091 ACN201210447091 ACN 201210447091ACN 102910575 ACN102910575 ACN 102910575A
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Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明涉及的是一种纳米流体通道的制作方法，尤其涉及的是一种聚合物纳米通道的制作方法。The invention relates to a method for manufacturing a nanofluid channel, in particular to a method for manufacturing a polymer nano channel.
背景技术Background technique
纳米通道结构以其结构存在的尺寸效应、比表面积效应等独特的物理化学性质，与纳米通道相关的基础及技术应用研究得到了广泛关注，特别为生物分子监测和分离、环境监测等提供了一种新的手段。随着对流体的理论不断深入研究及微纳加工技术的不断发展，一些纳米通道的相关技术已经在DNA测序、药物释放、环境监测等众多领域得到了广泛应用。Due to the unique physical and chemical properties of the nanochannel structure, such as the size effect and the specific surface area effect, the basic and technical application research related to the nanochannel has received extensive attention, especially for biomolecular monitoring and separation, and environmental monitoring. a new means. With the in-depth study of fluid theory and the continuous development of micro-nano processing technology, some nanochannel-related technologies have been widely used in many fields such as DNA sequencing, drug release, and environmental monitoring.
纳米流体通道的主要加工技术有：传统光刻技术与键合技术的结合以及基于弹性材料模具的纳米压印技术。到目前为止，主要有两大类方法用来制作纳米通道，一种方法就是利用电子束光刻技术或者聚焦离子束技术在抗蚀剂材料上获得纳米通道的沟槽结构，然后利用键合技术将获得后的纳米通道进行密封键合。另一种较为常用的方法就是纳米压印技术，纳米压印技术就是利用具有纳米尺寸的结构模具来挤压受热的聚合物材料，从而将模具的纳米图形复制到聚合物材料上，然后将纳米压印技术制作的纳米沟槽结构密封键合，最终完成纳米流体通道的制作。The main processing technologies for nanofluidic channels are: the combination of traditional photolithography technology and bonding technology, and the nanoimprint technology based on elastic material molds. So far, there are two main methods for making nanochannels. One method is to use electron beam lithography or focused ion beam technology to obtain the groove structure of nanochannels on resist materials, and then use bonding technology The obtained nanochannels are hermetically bonded. Another commonly used method is nanoimprinting technology. Nanoimprinting technology is to use a nano-sized structural mold to extrude a heated polymer material, so that the nano-pattern of the mold is copied onto the polymer material, and then the nano-imprint The nano-groove structure made by imprinting technology is sealed and bonded, and finally the nano-fluidic channel is completed.
但是利用上述光刻技术及纳米压印技术结合键合来实现纳米流体通道的制作在最终的应用过程中都会出现一些问题，例如聚合物流体通道键合工艺会导致纳米通道结构堵塞，影响其应用。However, using the above-mentioned lithography technology and nanoimprinting technology combined with bonding to realize the fabrication of nanofluidic channels will have some problems in the final application process. For example, the polymer fluidic channel bonding process will lead to blockage of the nanochannel structure, affecting its application. .
发明内容Contents of the invention
本发明的目的在于克服现有技术的不足，提供了一种聚合物纳米通道的制作方法，利用液体表面张力进行通道密封，无需现有技术的键合工艺。The purpose of the present invention is to overcome the deficiencies of the prior art, and provide a method for fabricating a polymer nanochannel, which utilizes liquid surface tension to seal the channel without the prior art bonding process.
本发明是通过以下技术方案实现的，本发明包括以下步骤：The present invention is achieved through the following technical solutions, and the present invention comprises the following steps:
（1）在清洗后的衬底上旋转涂覆抗蚀剂，获得抗蚀剂层；(1) Spin-coat resist on the cleaned substrate to obtain a resist layer;
（2）烘烤除去抗蚀剂溶剂；(2) Baking to remove the resist solvent;
（3）通过曝光和显影，获得成对的纳米线条结构；(3) Obtain paired nanowire structures through exposure and development;
（4）用清洗液清洗纳米线条结构，待清洗液在空气中完全挥发后，纳米通道制作完成。(4) Clean the nanowire structure with a cleaning solution. After the cleaning solution is completely evaporated in the air, the nanochannel is completed.
本发明使用的抗蚀剂是具有超高分辨的正性抗蚀剂，其显影液是4-甲基-2-戊酮和异丙醇的混合物，其常用体积配比是1:3。The resist used in the present invention is a positive resist with ultra-high resolution, and its developer is a mixture of 4-methyl-2-pentanone and isopropanol, and its common volume ratio is 1:3.
曝光剂量是获得纳米结构尺寸的重要工艺参数之一，本发明为实现高宽比的纳米结构，曝光剂量的选择与纳米结构高度及抗蚀剂的灵敏度有关。The exposure dose is one of the important process parameters for obtaining the size of the nanostructure. The present invention realizes the nanostructure with high aspect ratio, and the selection of the exposure dose is related to the height of the nanostructure and the sensitivity of the resist.
所述步骤（1）中，旋转涂覆包括先低转速旋转再高转速旋转，所述低转速为500转/s～1000转/s，涂覆时间为10s～60s，高转速旋转为1500转/s～3000转/s，涂覆时间为10s～60s，获得抗蚀剂层的厚度为0.3μm～5μm。In the step (1), the spin coating includes first rotating at a low speed and then rotating at a high speed, the low speed is 500 rpm to 1000 rpm, the coating time is 10s to 60s, and the high speed is 1500 rpm /s to 3000 revolutions/s, the coating time is 10s to 60s, and the thickness of the obtained resist layer is 0.3 μm to 5 μm.
在标准的MEMS或者半导体工艺中，为了获得一定厚度的抗蚀剂涂覆层，通常的旋涂工艺可以分为两步，第一步是低速旋转，通过此步工艺，在衬底表面获得一层较为均匀的抗蚀剂层，第二步就是根据所使用抗蚀剂的粘度和所要实现的厚度来选择高速的转速，通过此步工艺可以得到所要的抗蚀剂厚度。In the standard MEMS or semiconductor process, in order to obtain a certain thickness of resist coating layer, the usual spin coating process can be divided into two steps, the first step is low-speed rotation, through this step process, a certain thickness is obtained on the substrate surface. For a relatively uniform resist layer, the second step is to select a high-speed rotation speed according to the viscosity of the resist used and the thickness to be achieved. Through this step process, the desired resist thickness can be obtained.
作为本发明的优选方式之一，所述步骤（1）中，衬底为硅衬底，抗蚀剂为聚甲基丙烯酸甲酯。As one of the preferred modes of the present invention, in the step (1), the substrate is a silicon substrate, and the resist is polymethyl methacrylate.
作为本发明的优选方式之一，所述步骤（2）中，在180℃的热台上烘烤1～3min。As one of the preferred modes of the present invention, in the step (2), bake on a hot table at 180° C. for 1-3 minutes.
所述步骤（3）中纳米线条结构的线宽为50nm～200nm，均为凸起结构，高度为300 nm～5μm。In the step (3), the line width of the nanowire structure is 50nm-200nm, all of which are convex structures, and the height is 300nm-5μm.
作为本发明的优选方式之一，所述步骤（4）中，清洗液与抗蚀剂的接触角小于90°。As one of the preferred modes of the present invention, in the step (4), the contact angle between the cleaning solution and the resist is less than 90°.
本发明使用的是聚甲基丙烯酸甲酯（PMMA）抗蚀剂与清洗液异丙醇是浸润的，所以可以推断两者的接触角是小于90°。What the present invention uses is polymethyl methacrylate (PMMA) resist and cleaning liquid isopropanol are infiltrated, so it can be inferred that the contact angle of the two is less than 90°.
作为本发明的优选方式之一，所述清洗液为异丙醇或水。As one of the preferred modes of the present invention, the cleaning solution is isopropanol or water.
本发明中，抗蚀剂的选择应该根据抗蚀剂本身的性质来决定。选择的抗蚀剂与衬底具有较好的粘附性，在后续清洗液自然干燥工艺过程中不会从沉底材料上脱落，抗蚀剂涂覆时不需要再对衬底进行处理来提高其与抗蚀剂之间的粘附性。In the present invention, the selection of the resist should be determined according to the properties of the resist itself. The selected resist has good adhesion to the substrate, and will not fall off from the sinking material during the subsequent natural drying process of the cleaning solution, and the substrate does not need to be treated to improve the resist coating. Adhesion between it and the resist.
清洗液的选择应该根据纳米线条结构的抗蚀剂性质来决定。在微纳加工工艺中，较为常用的清洗液为醇类和去离子水，抗蚀剂与之具有较好的浸润性，清洗液与抗蚀剂的接触角要小于90度。The choice of cleaning solution should be determined according to the resist properties of the nanowire structure. In the micro-nano processing technology, the more commonly used cleaning liquids are alcohols and deionized water, and the resist has good wettability with them, and the contact angle between the cleaning liquid and the resist should be less than 90 degrees.
本发明相比现有技术具有以下优点：本发明利用液体表面张力进行通道密封，无需现有技术的键合工艺，从而不会出现流体在通道中的堵塞等现象，与电子束光刻技术相比，降低了加工成本。Compared with the prior art, the present invention has the following advantages: the present invention uses the surface tension of the liquid to seal the channel, without the need for the bonding process of the prior art, so that there will be no phenomenon such as fluid blockage in the channel, which is comparable to the electron beam lithography technology. ratio, reducing processing costs.
附图说明Description of drawings
图1是本发明内部存在清洗液的结构示意图；Fig. 1 is the structural representation that cleaning liquid exists inside the present invention;
图2是本发明形成封闭通道的结构示意图；Fig. 2 is a schematic structural view of the present invention forming a closed channel;
图3是图2的横截面示意图。FIG. 3 is a schematic cross-sectional view of FIG. 2 .
具体实施方式Detailed ways
下面对本发明的实施例作详细说明，本实施例在以本发明技术方案为前提下进行实施，给出了详细的实施方式和具体的操作过程，但本发明的保护范围不限于下述的实施例。The embodiments of the present invention are described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following implementation example.
实施例1Example 1
如图1和图2所示，本实施例的制作过程包括以下步骤：As shown in Figure 1 and Figure 2, the manufacturing process of this embodiment includes the following steps:
（1）将硅衬底1清洗后在200℃的烘箱中干燥后，将硅衬底1放入甩胶机中，滴入抗蚀剂2PMMA A4 系列，在低速500转/s旋转涂覆10s，高速1500转/s情况下旋转涂覆30s，获得厚度约为400nm的抗蚀剂2层；(1) After cleaning the
（2）在180℃的热台上烘烤1.5min，除去抗蚀剂2溶剂；(2) Bake on a hot stage at 180°C for 1.5 minutes to remove the
（3）通过曝光和显影，曝光剂量为0.5Jcm-2，获得宽度50nm的成对纳米线条结构，占空比为1:1，纳米线条的高宽比为8；(3) Through exposure and development, the exposure dose is 0.5Jcm-2 , and a paired nanowire structure with a width of 50nm is obtained, the duty ratio is 1:1, and the aspect ratio of the nanowire is 8;
（4）用清洗液3异丙醇清洗纳米线条结构，异丙醇的表面张力为21.7×10-3Nm-1，待清洗液3在空气中完全挥发后，纳米通道制作完成。(4) Clean the nanowire structure with cleaning solution 3 isopropanol. The surface tension of isopropanol is 21.7×10-3 Nm-1 . After the cleaning solution 3 is completely evaporated in the air, the nanochannels are fabricated.
如图1所示，在纳米线条结构显影和清洗完成后，从清洗液3中取出后，会有清洗液3残留在纳米线条结构内部，清洗液3在挥发过程中产生表面张力，同时由于纳米结构本身的机械强度低，无法抵抗清洗液3的表面张力的作用，纳米线条结构会发生变形，最终会形成如图2所示的纳米通道结构。As shown in Figure 1, after the development and cleaning of the nanowire structure is completed, after it is taken out from the cleaning solution 3, the cleaning solution 3 will remain inside the nanowire structure, and the surface tension of the cleaning solution 3 will be generated during the volatilization process. The mechanical strength of the structure itself is low, unable to resist the surface tension of the cleaning solution 3, the nanowire structure will be deformed, and finally a nanochannel structure as shown in FIG. 2 will be formed.
实施例2Example 2
本实施例的制作过程包括以下步骤：The manufacturing process of this embodiment includes the following steps:
（1）将硅衬底1清洗后在200℃的烘箱中干燥后，将硅衬底1放入甩胶机中，滴入抗蚀剂2PMMA A4 系列，在低速800转/s旋转涂覆10s，高速2000转/s情况下旋转涂覆30s，获得厚度约为1μm的抗蚀剂2层；(1) After cleaning the
（2）在180℃的热台上烘烤2min，除去抗蚀剂2溶剂；(2) Bake on a hot stage at 180°C for 2 minutes to remove the
（3）通过曝光和显影，曝光剂量为0.8Jcm-2，获得宽度100nm的成对纳米线条结构，占空比为1:1，纳米线条的高宽比为10；(3) Through exposure and development, the exposure dose is 0.8Jcm-2 , and a paired nanowire structure with a width of 100nm is obtained, the duty ratio is 1:1, and the aspect ratio of the nanowire is 10;
（4）用清洗液3异丙醇清洗纳米线条结构，异丙醇的表面张力为21.7×10-3Nm-1，待清洗液3在空气中完全挥发后，纳米通道制作完成。(4) Clean the nanowire structure with cleaning solution 3 isopropanol. The surface tension of isopropanol is 21.7×10-3 Nm-1 . After the cleaning solution 3 is completely evaporated in the air, the nanochannels are fabricated.
其他实施方式和实施例1相同。Other implementations are the same as in Example 1.
实施例3Example 3
本实施例的制作过程包括以下步骤：The manufacturing process of this embodiment includes the following steps:
（1）将硅衬底1清洗后在200℃的烘箱中干燥后，将硅衬底1放入甩胶机中，滴入抗蚀剂2PMMA A4 系列，在低速1000转/s旋转涂覆10s，高速3000转/s情况下旋转涂覆30s，获得厚度约为2μm的抗蚀剂2层；(1) After cleaning the
（2）在180℃的热台上烘烤3min，除去抗蚀剂2溶剂；(2) Bake on a hot stage at 180°C for 3 minutes to remove the resist 2 solvent;
（3）通过曝光和显影，曝光剂量为1.0Jcm-2，获得宽度150nm的成对纳米线条结构，占空比为1:1，纳米线条的高宽比为8；(3) Through exposure and development, the exposure dose is 1.0Jcm-2 , and a paired nanowire structure with a width of 150nm is obtained, the duty ratio is 1:1, and the aspect ratio of the nanowire is 8;
（4）用清洗液3异丙醇清洗纳米线条结构，异丙醇的表面张力为21.7×10-3Nm-1，待清洗液3在空气中完全挥发后，纳米通道制作完成。(4) Clean the nanowire structure with cleaning solution 3 isopropanol. The surface tension of isopropanol is 21.7×10-3 Nm-1 . After the cleaning solution 3 is completely evaporated in the air, the nanochannels are fabricated.
其他实施方式和实施例1相同。Other implementations are the same as in Example 1.
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