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CN102890906A - Display structure - Google Patents

Display structure
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Publication number
CN102890906A
CN102890906ACN2011102072443ACN201110207244ACN102890906ACN 102890906 ACN102890906 ACN 102890906ACN 2011102072443 ACN2011102072443 ACN 2011102072443ACN 201110207244 ACN201110207244 ACN 201110207244ACN 102890906 ACN102890906 ACN 102890906A
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CN
China
Prior art keywords
layer
display structure
transparency carrier
display
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102072443A
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Chinese (zh)
Inventor
王文俊
韩西容
江显伟
廖文堆
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Wintek Corp
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Wintek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Wintek CorpfiledCriticalWintek Corp
Priority to CN2011102072443ApriorityCriticalpatent/CN102890906A/en
Publication of CN102890906ApublicationCriticalpatent/CN102890906A/en
Pendinglegal-statusCriticalCurrent

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Abstract

The invention discloses a display structure. The structure comprises a first transparent substrate and a second transparent substrate which are oppositely arranged, a display dielectric layer, at least one first thin film transistor, a first insulating layer, a first electrode layer, an organic light-emitting layer, a cathode layer and a second electrode layer, wherein the display dielectric layer is arranged between the first transparent substrate and the second transparent substrate; the first thin film transistors are formed on the first transparent substrate; the first insulating layer is formed on the first transparent substrate and covers the first thin film transistors; the first electrode layer is formed on the first insulating layer; the organic light-emitting layer is formed in an area where the first thin film transistors are not superposed on the first electrode layer; the cathode layer is formed on the organic light-emitting layer; and the second electrode layer is formed on the second transparent substrate and is a transparent electrode layer.

Description

Display structure
Technical field
The present invention relates to a kind of display structure.
Background technology
Portable electronic devices such as panel computer, intelligent mobile phone all have the functions such as online reading, animation demonstration, and those functions can utilize organic light emitting diode display (OLED) or liquid crystal display (LCD) to implement at present.Because this type of portable electronic devices needs to improve as far as possible number when using, therefore how to reduce the design problem that power consumption becomes a key.On the other hand, for example an electronic book device of bistable display formation can store a large amount of reading files and have electricity-saving function concurrently, because its bistable characteristic has advantages of power saving when reading, but therefore the reaction velocity of bistable display is not suitable for animation and shows not as organic light emitting diode display or liquid crystal display.
Summary of the invention
The invention provides a kind of display structure that has power saving effect and high reaction velocity concurrently.
According to the design of one embodiment of the invention, a kind of display structure comprises one first transparency carrier and one second transparency carrier, a display dielectric layer, at least one the first film transistor, one first insulation course, one first electrode layer, an organic luminous layer, a cathode layer and a second electrode lay that is oppositely arranged.Display dielectric layer is situated between and is located between the first transparency carrier and the second transparency carrier, and the first film transistor is formed on the first transparency carrier, and the first insulation course is formed on the first transparency carrier and the cover film transistor.The first electrode layer is formed on the first insulation course, organic luminous layer is formed on the first electrode layer the not zone of superimposed thin film transistor (TFT), cathode layer is formed on the organic luminous layer, and the second electrode lay is formed on the second transparency carrier and the second electrode lay is a transparent electrode layer.
In one embodiment, a black matrix layer is formed on the first electrode layer or is situated between and is located between the first electrode layer and the first insulation course.
In one embodiment, display dielectric layer comprises a cholesterol liquid crystal display dielectric layer, an electrophoretic display medium layer or a high polymer dispersed liquid crystal dielectric layer.
In one embodiment, display structure more comprises at least one the second thin film transistor (TFT) and is formed on the second transparency carrier.
In one embodiment, one of them of the first electrode layer and cathode layer is a common electrode of display structure.
In one embodiment, the second electrode lay is a common electrode of display structure.
According to the design of another embodiment of the present invention, a kind of display structure comprises one first transparency carrier and one second transparency carrier, a display dielectric layer, at least one the first film transistor, one first insulation course, one first electrode layer, a second electrode lay, an organic luminous layer and a cathode layer that is oppositely arranged.Display dielectric layer is situated between and is located between the first transparency carrier and the second transparency carrier, and the first film transistor is formed on the first transparency carrier, and the first insulation course is formed on the first transparency carrier and the cover film transistor.The first electrode layer is formed on the first insulation course, and the second electrode lay is formed on the second transparency carrier and is electrically connected the first electrode layer, and the second electrode lay is a transparent electrode layer.Organic luminous layer is formed on the second transparent electrode layer, and cathode layer is formed on the organic luminous layer.
In one embodiment, a flanged structure thing is formed on the first transparency carrier or the second transparency carrier to overlap the first electrode layer and the second electrode lay.
In one embodiment, cathode layer is a common electrode of display structure.
Another embodiment of the present invention provides a kind of display structure, at least one organic light-emitting diode pixel unit and at least one bi-stable pixels unit that comprise in abutting connection with or be oppositely arranged, wherein the bi-stable pixels unit is closed when the organic light-emitting diode pixel unit shows, and the organic light-emitting diode pixel unit is closed when the bi-stable pixels unit shows.
In one embodiment, when the bi-stable pixels unit writes or erases action, one operating voltage signal (Vdd) of display structure is low level, and when the organic light-emitting diode pixel unit showed, operating voltage signal (Vdd) was high levle.
Design by above-described embodiment, when utilizing the organic light-emitting diode pixel unit to show, have self-luminescence, wide viewing angle, high briliancy, and the reaction time be suitable for soon the advantages such as animation demonstration, and when utilizing the bi-stable pixels unit to show, bistable characteristic can have advantages of power saving when reading.
Description of drawings
Accompanying drawing described herein is used to provide a further understanding of the present invention, consists of the application's a part, does not consist of limitation of the invention.In the accompanying drawings:
Fig. 1 is the display structure simplified schematic diagram according to one embodiment of the invention.
Fig. 2 is the electrode structure diagrammatic cross-section according to the display structure of one embodiment of the invention.
Fig. 3 is the electrode structure diagrammatic cross-section according to the display structure of another embodiment of the present invention.
Fig. 4 is the electrode structure diagrammatic cross-section according to the display structure of another embodiment of the present invention.
Fig. 5 is the electrode structure diagrammatic cross-section according to the display structure of another embodiment of the present invention.
Fig. 6 is the display structure simplified schematic diagram according to one embodiment of the invention.
Fig. 7 is the electrode structure diagrammatic cross-section of Fig. 6.Fig. 8 is the image element circuit driving sequential chart according to the display structure of one embodiment of the invention.
Drawing reference numeral:
10,10a-10e display structure
12 stable state pixel cells
12a cholesterol liquid crystal pixel cell
12b electrophoretic display pixel unit
12c high polymer dispersed liquid crystal pixel cell
14 organic light-emitting diode pixel unit
16,18 transparency carriers
22 gate insulators
24 thin film transistor (TFT) channel layers
26 n+ amorphous silicon layers
28 protective seams
32,36 transparent electrode layers
34 black matrix layer
38 through holes
40 cholesteric liquid crystal layers
42 organic insulators
44 organic luminous layers
46 cathode layers
48 barrier layers
50 electrophoretic display medium layers
52 flanged structure things
54 microcapsules
56 separate thing
60 polymer dispersed liquid crystal layer
The M1 the first metal layer
M2 the second metal level
T, T1, T2 thin film transistor (TFT)
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing the embodiment of the invention is described in further details.At this, illustrative examples of the present invention and explanation thereof are used for explanation the present invention, but not as a limitation of the invention.
Fig. 1 is the display structure simplified schematic diagram according to one embodiment of the invention.As shown in Figure 1,display structure 10 can comprise a bistable state pixel cell 12 and an organic light-emittingdiode pixel unit 14 simultaneously.Have self-luminescence, wide viewing angle, high briliancy when utilizing organic light-emittingdiode pixel unit 14 to show, reach fast characteristic of response time, the bistable characteristic because of itself when utilizing bi-stable pixels unit 12 to show can have the advantage of power saving.Fig. 2 is the electrode structure diagrammatic cross-section according to the display structure of one embodiment of the invention.Shown in the display structure 10a of Fig. 2, the bi-stable pixels unit is a cholesterol liquidcrystal pixel cell 12a, and the electrode structure of cholesterol liquidcrystal pixel cell 12a and organic light-emittingdiode pixel unit 14 is formed on the same side (beingtransparency carrier 16).In the present embodiment, can comprise at least one thin film transistor (TFT) T among the cholesterol liquid crystal pixel cell 12a.In the rhythmo structure of thin film transistor (TFT) T; one the first metal layer M1 is formed on thetransparency carrier 16; the gate insulator of one tool dielectric effect (gate insulator) 22 covers the first metal layer M1; the thin film transistor (TFT)channel layer 24, n+amorphous silicon layer 26 and the one second metal level M2 that consist of such as amorphous silicon film are formed on thegate insulator 22, and theprotective seam 28 of a tool dielectric effect (passivation insulator) is arranged ongate insulator 22 and the second metal level M2.Oneorganic insulator 42 is formed on thetransparency carrier 16 and the cover film transistor T, and is arranged on theorganic insulator 42 and via a throughhole 38 by thetransparent electrode layer 32 that nesa coating consists of and is electrically connected the second metal level M2.In one embodiment,transparent electrode layer 32 also can see through the second metal level M2 and be electrically connected the first metal layer M1, to realize the design of pixel compensation circuit.In addition, a black matrix layer 34 is formed on the transparent electrode layer 32.One transparency carrier, 18subtend transparency carriers 16 arrange, and are formed at the side towardstransparency carrier 16 oftransparency carrier 18 with whole distribution mode by anothertransparent electrode layer 36 that nesa coating consists of.Cholestericliquid crystal layer 40 fillings are betweentransparency carrier 16 and transparency carrier 18.In the electrode structure of organic light-emittingdiode pixel unit 14;organic insulator 42 is formed on theprotective seam 28; onetransparent electrode layer 32, an organicluminous layer 44 and acathode layer 46 sequentially are formed on theorganic insulator 42;transparent electrode layer 32 can be used as the anode (Anode) of organic light-emittingdiode pixel unit 14, andcathode layer 46 can be used as the negative electrode of organic light-emittingdiode pixel unit 14 and can be transparent conductive material and consists of.Organicluminous layer 44 is formed at the zone of not superimposed thin film transistor (TFT) T, and organicluminous layer 44 accessible region partings (Bank) 56 define light-emitting area.Be electrically connected the second metal level M2 whentransparent electrode layer 32 sees through throughhole 38, andcathode layer 46 can consist of the organic light-emitting diode display structure of a traditional form during as the common electrode (Vss) of organic light-emitting diode pixel unit 14.In another embodiment, be electrically connected the second metal level M2 whencathode layer 46 sees through throughhole 38, andtransparent electrode layer 32 can consist of the organic light-emitting diode display structure of an invert form (inverted) during as the common electrode (Vdd) of organic light-emitting diode pixel unit 14.That is thin film transistor (TFT) T can be electrically connected one of them oftransparent electrode layer 32 andcathode layer 46.
Must notice that above-mentionedtransparent electrode layer 32 be illustration only, be formed at electrode layer on theorganic insulator 42 and can be opaque material and consist of and can be a reflection horizon.Cholesterol liquid crystal pixel cell 12 is suitable for providing static to be read, and organic light-emittingdiode pixel unit 14 is suitable for carrying out the animation demonstration.For example, when cholesterol liquidcrystal pixel cell 12a is planar spiral orientation (planar state), organic light-emittingdiode pixel unit 14 is not luminous, when cholesterol liquidcrystal pixel cell 12a was vertical spin type orientation (focal conic state), organic light-emittingdiode pixel unit 14 was luminous.Certainly, the lighting kenel of organic light-emittingdiode pixel unit 14 does not limit, when organic light-emittingdiode pixel unit 14 luminous downwards, the cholesterol liquidcrystal pixel cell 12a that collocation upwards shows can provide the effect of double-sided display, ifcathode layer 46 is that transparent then organic light-emittingdiode pixel unit 14 can be upwards luminous, that is organic light-emittingdiode pixel unit 14 is can be only upwards luminous, only luminous or make progress simultaneously luminous and luminously downwards all can downwards.
Shown in thedisplay structure 10b of Fig. 3, in another embodiment, black matrix layer 34 can be formed at first on theorganic insulator 42, andtransparent electrode layer 32 is formed on the black matrix layer 34 again and covers black matrix layer 34.In other words, black matrix layer 34 can be situated between and is located betweentransparent electrode layer 32 and theorganic insulator 42.
Fig. 4 is the electrode structure schematic diagram according to the display structure of another embodiment of the present invention.Shown in thedisplay structure 10c of Fig. 4, the bi-stable pixels unit is a cholesterol liquidcrystal pixel cell 12a, and the electrode structure of cholesterol liquidcrystal pixel cell 12a and organic light-emittingdiode pixel unit 14 is formed at not homonymy, for example the electrode structure of cholesterol liquidcrystal pixel cell 12a is formed on thetransparency carrier 16, and the electrode structure of organic light-emittingdiode pixel unit 14 is formed on the transparency carrier 18.In the present embodiment, can comprise at least one thin film transistor (TFT) T among the cholesterol liquidcrystal pixel cell 12a and have the similar electrode structure with Fig. 2, butorganic insulator 42 for example can be the light tight of black or the low light transmission material consists of, and can omit black matrix layer 34.In the electrode structure of organic light-emittingdiode pixel unit 14, atransparent electrode layer 36, an organicluminous layer 44 and acathode layer 46 sequentially are formed on the transparency carrier 18.Cathode layer 46 is as the common electrode (Vcom) ofdisplay structure 10c, and abarrier layer 48 coats organicluminous layer 44 and cathode layer 46.Oneflanged structure thing 52 is arranged ontransparency carrier 16 or thetransparency carrier 18, makestransparent electrode layer 32 on thetransparency carrier 16 be overlappedtransparent electrode layer 36 on the transparency carrier 18.In the present embodiment, organic light-emittingdiode pixel unit 14 is the form that homonymy shows with cholesterol liquidcrystal pixel cell 12a, when cholesterol liquidcrystal pixel cell 12a is planar spiral orientation (planar state), organic light-emittingdiode pixel unit 14 is not luminous, when cholesterol liquidcrystal pixel cell 12a was vertical spin type orientation (focal conic state), organic light-emittingdiode pixel unit 14 was upwards luminous.
Fig. 5 is the electrode structure schematic diagram according to the display structure of another embodiment of the present invention.Shown in the display structure 10d of Fig. 5, the bi-stable pixels unit is an electrophoretic display pixel unit 12b and is formed on the same side (transparency carrier 16) with the electrode structure of organic light-emitting diode pixel unit 14.That is in the present embodiment, the display dielectric layer be located at 18 oftransparency carrier 16 and transparency carriers that is situated between is an electrophoretic display medium layer 50.Electrophoretic display pixel unit 12b can comprise at least one thin film transistor (TFT) T, and electrophoretic display medium layer 50 can comprise a plurality of microcapsules 54.Bytransparent electrode layer 32,36 change in polarity, black or white media in the microcapsules 54 are moved up and down, the reflection of control light and display effect is provided.In the present embodiment, luminous downwards when organic light-emittingdiode pixel unit 14, the electrophoretic display pixel unit 12b that collocation upwards shows can provide the double-sided display effect.When the 12b display frame of electrophoretic display pixel unit, organic light-emittingdiode pixel unit 14 can be not luminous, and when electrophoretic display pixel unit 12b demonstration black, organic light-emittingdiode pixel unit 14 can be upwards luminous.
Fig. 6 is the display structure schematic diagram according to another embodiment of the present invention.Shown in thedisplay structure 10e of Fig. 6, the display dielectric layer be located at 18 oftransparency carrier 16 and transparency carriers that is situated between is a polymer dispersedliquid crystal layer 60, polymer dispersedliquid crystal layer 60 is dispersed in polymer compound film by the liquid crystal droplet of tool anisotropy and forms, can regulate and control index of refraction relationship between liquid crystal and macromolecule by extra electric field, form light-scattering state (Off state) and penetrate state (On state) with light, reach Presentation Function.In the present embodiment,display structure 10e can have two thin film transistor (TFT) T1, T2, and thin film transistor (TFT) T1 is formed on thetransparency carrier 18, and thin film transistor (TFT) T2 is formed on the transparency carrier 16.As shown in Figure 6, the both sides ofdisplay structure 10e form respectively a high polymer dispersed liquidcrystal pixel cell 12c and an organic light-emittingdiode pixel unit 14, and high polymer dispersed liquidcrystal pixel cell 12c can show upwards that organic light-emittingdiode pixel unit 14 then can be luminous or upwards luminous downwards.
Fig. 7 is the electrode structure diagrammatic cross-section of Fig. 6.Shown in thedisplay structure 10e of Fig. 7, the electrode structure of high polymer dispersed liquidcrystal pixel cell 12c and organic light-emittingdiode pixel unit 14 is formed at respectively ontransparency carrier 16 and the transparency carrier 18.In the present embodiment, can comprise at least one thin film transistor (TFT) T1 among the high polymer dispersed liquid crystal pixel cell 12c.In the rhythmo structure of thin film transistor (TFT) T1; one the first metal layer M1 is formed on thetransparency carrier 18; the gate insulator of one tool dielectric effect (gate insulator) 22 covers the first metal layer M1; the thin film transistor (TFT)channel layer 24, n+amorphous silicon layer 26 and the one second metal level M2 that consist of such as amorphous silicon film are formed on thegate insulator 22, and theprotective seam 28 of a tool dielectric effect (passivation insulator) is arranged ongate insulator 22 and the second metal level M2.Thetransparent electrode layer 36 that one nesa coating consists of is arranged on the protective seam 28.In the present embodiment, can comprise at least one thin film transistor (TFT) T2 in the organic light-emittingdiode pixel unit 14, and the formation position of thin film transistor (TFT) T2 superimposed thin film transistor (TFT) T1 roughly.In the rhythmo structure of thin film transistor (TFT) T2; one the first metal layer M1 is formed on thetransparency carrier 16; the gate insulator of one tool dielectric effect (gate insulator) 22 covers the first metal layer M1; the thin film transistor (TFT)channel layer 24, n+amorphous silicon layer 26 and the one second metal level M2 that consist of such as amorphous silicon film are formed on thegate insulator 22, and theprotective seam 28 of a tool dielectric effect (passivation insulator) is arranged ongate insulator 22 and the second metal level M2.Oneorganic insulator 42 is formed on thetransparency carrier 16 and cover film transistor T 2, and is arranged on theorganic insulator 42 and via a throughhole 38 by thetransparent electrode layer 32 that nesa coating consists of and is electrically connected the second metal level M2.In one embodiment,transparent electrode layer 32 also can see through the second metal level M2 and be electrically connected the first metal layer M1, to realize the design of pixel compensation circuit.One transparency carrier, 18 subtendtransparency carriers 16 arrange.Polymer dispersedliquid crystal layer 60 fillings are betweentransparency carrier 16 and transparency carrier 18.In the electrode structure of organic light-emittingdiode pixel unit 14, onetransparent electrode layer 32, an organicluminous layer 44 and acathode layer 46 sequentially are formed on theorganic insulator 42,transparent electrode layer 32 can be used as the anode (Anode) of organic light-emittingdiode pixel unit 14, andcathode layer 46 can be used as the negative electrode of organic light-emitting diode pixel unit 14.Organicluminous layer 44 is formed at the zone of not superimposed thin film transistor (TFT) T2, and organicluminous layer 44 accessible region partings (Bank) 56 define light-emitting area.Transparent electrode layer 32 (anode) can see through throughhole 38 and be electrically connected the second metal level M2, andcathode layer 46 can be used as a common electrode (Vss) of organic light-emitting diode pixel unit 14.In addition,cathode layer 46 can be simultaneously as the common electrode of high polymer dispersed liquidcrystal pixel cell 12c.
Fig. 8 is the image element circuit driving sequential chart according to the display structure of one embodiment of the invention.Take the display structure of Fig. 1 as example, the image element circuit of each display structure can comprise 3 control lines, be respectively data line (Data line), sweep trace (Scan line) and operating voltage line (Vdd line), and the driving sequential can be divided into three phases:
(1) the bi-stable pixels unit writes: the first metal layer M1 is in the high levle conducting because of sweep trace, so the low level of data line will be admitted to, bi-stable pixels unit 12 is illuminating state at this moment, for avoiding organic light-emittingdiode pixel unit 14 to be opened simultaneously, so the Vdd signal is low level at this moment;
(2) bi-stable pixels cell erasure: in the time will switching to 14 demonstration of organic light-emitting diode pixel unit, need carry out the action of erasing in bi-stable pixels unit 12, be that the voltage at liquid crystal two ends is required to be high levle and makes bi-stable pixels unit 12 be in dark attitude, at this moment, for avoiding organic light-emittingdiode pixel unit 14 to be opened simultaneously, so the Vdd signal is low level; And
(3) the organic light-emitting diode pixel unit is luminous: when the first metal layer M1 is in the high levle conducting because of sweep trace, so the level of data line will be admitted to, this moment, the Vdd signal was high levle at this moment, and organic light-emittingdiode pixel unit 14 shows different GTGs with the different levels of factor data line.
The present invention describes by the above embodiments and variation example.All embodiment of the present invention and variation example are only for exemplary and non-limiting.Based on connotation of the present invention and scope, and being the present invention, the various variation examples that comprise the contact panel of above-mentioned feature or contactor control device contain.The present invention is defined by the claim scope.

Claims (20)

CN2011102072443A2011-07-222011-07-22Display structurePendingCN102890906A (en)

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US20160109740A1 (en)*2014-10-212016-04-21Samsung Display Co., Ltd.Display panel and display device having the same
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JP2017219780A (en)*2016-06-102017-12-14株式会社半導体エネルギー研究所Display device, input/output device, information processing device, and display method
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CN114220837A (en)*2021-12-132022-03-22深圳市华星光电半导体显示技术有限公司Double-sided display panel, preparation method of double-sided display panel and electronic equipment

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CN103838042A (en)*2012-11-232014-06-04财团法人工业技术研究院Display, method for manufacturing display, and image writing method
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CN107167943A (en)*2017-07-202017-09-15京东方科技集团股份有限公司Display panel and display device
WO2019109315A1 (en)*2017-12-072019-06-13Boe Technology Group Co., Ltd.Display panel having light modulation region, display apparatus, method of modulating display contrast of display panel, and method of fabricating display panel
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CN110571257A (en)*2019-09-112019-12-13京东方科技集团股份有限公司 Display substrate and preparation method thereof, and display device
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CN114220837A (en)*2021-12-132022-03-22深圳市华星光电半导体显示技术有限公司Double-sided display panel, preparation method of double-sided display panel and electronic equipment
US12089454B2 (en)2021-12-132024-09-10Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., LtdDouble-sided display panel, method of manufacturing double-sided display panel, and electronic equipment

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