技术领域technical field
本发明涉及一种多芯片倒装先封装后蚀刻无基岛封装结构及其制造方法，属于半导体封装技术领域。The invention relates to a multi-chip flip-chip package first and then etch baseless island package structure and a manufacturing method thereof, which belong to the technical field of semiconductor package.
背景技术Background technique
传统的高密度基板封装结构的制造工艺流程如下所示：The manufacturing process flow of the traditional high-density substrate package structure is as follows:
步骤一、参见图24，取一玻璃纤维材料制成的基板，Step 1, referring to Figure 24, take a substrate made of glass fiber material,
步骤二、参见图25，在玻璃纤维基板上所需的位置上开孔，Step 2, see Figure 25, make holes on the required position on the glass fiber substrate,
步骤三、参见图26，在玻璃纤维基板的背面披覆一层铜箔，Step 3, see Figure 26, coat a layer of copper foil on the back of the glass fiber substrate,
步骤四、参见图27，在玻璃纤维基板打孔的位置填入导电物质，Step 4, see Figure 27, fill in the conductive material at the position where the glass fiber substrate is punched,
步骤五、参见图28，在玻璃纤维基板的正面披覆一层铜箔，Step 5, see Figure 28, coat a layer of copper foil on the front of the glass fiber substrate,
步骤六、参见图29，在玻璃纤维基板表面披覆光阻膜，Step 6, see Figure 29, coat the photoresist film on the surface of the glass fiber substrate,
步骤七、参见图30，将光阻膜在需要的位置进行曝光显影开窗，Step 7, see Figure 30, expose and develop the photoresist film at the required position to open the window,
步骤八、参见图31，将完成开窗的部分进行蚀刻，Step 8, see Figure 31, etch the part where the window is completed,
步骤九、参见图32，将基板表面的光阻膜剥除，Step 9, see Figure 32, peel off the photoresist film on the surface of the substrate,
步骤十、参见图33，在铜箔线路层的表面进行防焊漆（俗称绿漆）的披覆，Step 10, see Figure 33, apply solder resist paint (commonly known as green paint) on the surface of the copper foil circuit layer,
步骤十一、参见图34，在防焊漆需要进行后工序的装片以及打线键合的区域进行开窗，Step 11, see Figure 34, open the window in the area where the solder resist paint needs to be installed in the post-process and wire bonded.
步骤十二、参见图35，在步骤十一进行开窗的区域进行电镀，相对形成基岛和引脚，Step 12, see Figure 35, perform electroplating in the area where the window is opened in step 11, and relatively form base islands and pins,
步骤十三、完成后续的装片、打线、包封、切割等相关工序。Step thirteen, complete subsequent related processes such as film loading, wire bonding, encapsulation, and cutting.
上述传统高密度基板封装结构存在以下不足和缺陷：The above-mentioned traditional high-density substrate packaging structure has the following deficiencies and defects:
1、多了一层的玻璃纤维材料，同样的也多了一层玻璃纤维的成本；1. There is an extra layer of glass fiber material, and also the cost of an extra layer of glass fiber;
2、因为必须要用到玻璃纤维，所以就多了一层玻璃纤维厚度约100~150μm的厚度空间；2. Because glass fiber must be used, there is an extra layer of glass fiber thickness of about 100~150μm;
3、玻璃纤维本身就是一种发泡物质，所以容易因为放置的时间与环境吸入水分以及湿气，直接影响到可靠性的安全能力或是可靠性的等级；3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;
4、玻璃纤维表面被覆了一层约50~100μm的铜箔金属层厚度，而金属层线路与线路的蚀刻距离也因为蚀刻因子的特性只能做到50~100μm的蚀刻间隙（参见图36，最好的制作能力是蚀刻间隙约等同于被蚀刻物体的厚度），所以无法真正的做到高密度线路的设计与制造；4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 36, The best production capacity is that the etching gap is approximately equal to the thickness of the etched object), so it is impossible to truly design and manufacture high-density circuits;
5、因为必须要使用到铜箔金属层，而铜箔金属层是采用高压粘贴的方式，所以铜箔的厚度很难低于50μm的厚度，否则就很难操作如不平整或是铜箔破损或是铜箔延展移位等等；5. Because the copper foil metal layer must be used, and the copper foil metal layer is pasted by high pressure, so the thickness of the copper foil is difficult to be less than 50μm, otherwise it will be difficult to operate such as unevenness or copper foil damage Or the extension and displacement of copper foil, etc.;
6、也因为整个基板材料是采用玻璃纤维材料，所以明显的增加了玻璃纤维层的厚度100~150μm，无法真正的做到超薄的封装；6. Also because the entire substrate material is made of glass fiber material, the thickness of the glass fiber layer is obviously increased by 100~150 μm, and it is impossible to achieve ultra-thin packaging;
7、传统玻璃纤维加贴铜箔的工艺技术因为材质特性差异很大（膨胀系数），在恶劣环境的工序中容易造成应力变形，直接的影响到元件装载的精度以及元件与基板粘着性与可靠性。7. Due to the large difference in material properties (expansion coefficient), the traditional glass fiber plus copper foil technology is easy to cause stress deformation in the harsh environment process, which directly affects the accuracy of component loading and the adhesion and reliability of components and substrates. sex.
发明内容Contents of the invention
本发明的目的在于克服上述不足，提供一种多芯片倒装先封装后蚀刻无基岛封装结构及其制造方法，其工艺简单，不需使用玻璃纤维层，减少了制造成本，提高了封装体的安全性和可靠性，减少了玻璃纤维材料带来的环境污染，而且金属基板线路层采用的是电镀方法，能够真正做到高密度线路的设计和制造。The object of the present invention is to overcome the above disadvantages, to provide a multi-chip flip-chip first package and then etch baseless island package structure and its manufacturing method, the process is simple, no need to use glass fiber layer, reduce the manufacturing cost, improve the packaging body The safety and reliability of the circuit reduce the environmental pollution caused by the glass fiber material, and the metal substrate circuit layer adopts the electroplating method, which can truly achieve the design and manufacture of high-density circuits.
本发明的目的是这样实现的：一种多芯片倒装先封装后蚀刻无基岛封装结构，它包括引脚和芯片，所述芯片有多个，所述多个芯片倒装于引脚正面，所述芯片底部与引脚正面之间设置有底部填充胶，所述引脚外围的区域、引脚与引脚之间的区域、引脚上部和引脚下部的区域以及芯片外均包封有塑封料，所述引脚下部的塑封料表面上开设有小孔，所述小孔与引脚背面相连通，所述小孔内设置有金属球，所述金属球与引脚背面相接触。The object of the present invention is achieved in this way: a multi-chip flip-chip packaging structure without base islands after packaging, it includes pins and chips, there are multiple chips, and the multiple chips are flip-chip on the front of the pins , underfill glue is provided between the bottom of the chip and the front of the pins, and the area around the pins, the area between the pins, the upper and lower areas of the pins, and the outside of the chip are all encapsulated There is a plastic sealing compound, and a small hole is opened on the surface of the plastic sealing compound at the lower part of the pin, and the small hole communicates with the back of the pin, and a metal ball is arranged in the small hole, and the metal ball is in contact with the back of the pin .
一种多芯片倒装先封装后蚀刻无基岛封装结构的制造方法，它包括以下工艺步骤：A method for manufacturing a multi-chip flip-chip package first and then etching a substrate-free package structure, which includes the following process steps:
步骤一、取金属基板Step 1. Take the metal substrate
步骤二、金属基板表面预镀铜材Step 2. Pre-plating copper on the surface of the metal substrate
在金属基板表面电镀一层铜材薄膜，Electroplate a layer of copper film on the surface of the metal substrate,
步骤三、贴光阻膜作业Step 3: Paste the photoresist film
利用贴光阻膜设备在完成预镀铜材薄膜的金属基板正面及背面进行光阻膜的被覆，Use the photoresist film sticking equipment to coat the photoresist film on the front and back of the metal substrate that has completed the pre-plated copper film,
步骤四、金属基板正面去除部分光阻膜Step 4. Remove part of the photoresist film from the front of the metal substrate
利用曝光显影设备在步骤三完成贴光阻膜作业的金属基板正面进行图形曝光、显影以及开窗，以露出金属基板正面后续需要进行电镀的图形区域，Use the exposure and development equipment to perform graphic exposure, development and window opening on the front of the metal substrate where the photoresist film is pasted in step 3 to expose the graphic area that needs to be electroplated on the front of the metal substrate.
步骤五、电镀惰性金属线路层Step 5. Electroplating inert metal circuit layer
将金属基板正面已完成开窗的图形区域电镀上惰性金属线路层，Electroplate the inert metal circuit layer on the pattern area where the window has been opened on the front of the metal substrate,
步骤六、电镀金属线路层Step 6. Plating metal circuit layer
在步骤五中的惰性金属线路层表面镀上金属线路层，所述金属线路层电镀完成后即在金属基板正面相对形成引脚上部，A metal circuit layer is plated on the surface of the inert metal circuit layer in step five, and the upper part of the pin is relatively formed on the front side of the metal substrate after the metal circuit layer is electroplated.
步骤七、去除金属基板表面光阻膜Step 7. Remove the photoresist film on the surface of the metal substrate
将金属基板表面的光阻膜去除，Remove the photoresist film on the surface of the metal substrate,
步骤八、装片及芯片底部填充Step 8: Chip loading and chip bottom filling
在步骤六相对形成的引脚上部正面倒装上多个芯片，并在芯片底部填充环氧树脂，Flip-chip multiple chips on the upper part of the pins formed in step 6, and fill the bottom of the chip with epoxy resin,
步骤九、包封Step 9. Encapsulation
将完成多个芯片倒装及芯片底部填充后的金属基板正面进行包封塑封料作业，Encapsulate the front side of the metal substrate after multiple chip flip-chip and chip underfill,
步骤十、贴光阻膜作业Step 10. Paste photoresist film
利用贴光阻膜设备在完成包封塑封料的金属基板正面及背面进行光阻膜的被覆，Use the photoresist film sticking equipment to cover the front and back of the metal substrate with the plastic encapsulation compound,
步骤十一、金属基板背面去除部分光阻膜Step 11. Remove part of the photoresist film on the back of the metal substrate
利用曝光显影设备在步骤十完成贴膜作业的金属基板背面进行图形曝光、显影以及开窗，以露出金属基板背面后续需要进行化学蚀刻的图形区域，Use the exposure and development equipment to perform graphic exposure, development and window opening on the back of the metal substrate that has completed the film attachment operation in step 10, so as to expose the graphic area that needs to be chemically etched on the back of the metal substrate.
步骤十二、化学蚀刻Step 12. Chemical etching
将步骤十一中金属基板背面完成开窗的图形区域进行化学蚀刻，Perform chemical etching on the graphic area where the windows are opened on the back of the metal substrate in step eleven,
步骤十三、电镀金属线路层Step 13. Electroplating the metal circuit layer
在步骤十二完成化学蚀刻后露出的惰性金属线路层表面进行金属线路层的电镀，金属线路层电镀完成后即在金属基板背面相对形成引脚下部，The surface of the inert metal circuit layer exposed after the chemical etching is completed in step 12 is electroplated on the metal circuit layer. After the electroplating of the metal circuit layer is completed, the lower part of the pin is relatively formed on the back of the metal substrate.
步骤十四、去除金属基板表面光阻膜Step 14. Remove the photoresist film on the surface of the metal substrate
将金属基板表面的光阻膜去除，Remove the photoresist film on the surface of the metal substrate,
步骤十五、包封Step fifteen, encapsulation
将步骤十四去除光阻膜后的金属基板背面进行塑封料的包封作业，The backside of the metal substrate after removing the photoresist film in step 14 is subjected to the encapsulation operation of the plastic encapsulant,
步骤十六、塑封料表面开孔Step 16. Open holes on the surface of the plastic encapsulant
在步骤十五金属基板背面包封塑封料的表面进行后续要植金属球区域的开孔作业，On the surface of the plastic encapsulation compound on the back of the metal substrate in step 15, perform the subsequent drilling operation in the area where the metal balls will be planted,
步骤十七、清洗Step seventeen, cleaning
对步骤十六金属基板背面塑封料开孔处进行清洗，Clean the opening of the plastic encapsulant on the back of the metal substrate in step sixteen,
步骤十八、植球Step 18, Planting the ball
在步骤十七经过清洗的小孔内植入金属球，Implant metal balls in the cleaned holes in step seventeen,
步骤十九、切割成品Step nineteen, cut the finished product
将步骤十八完成植球的半成品进行切割作业，使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来，制得单芯片倒装先封装后蚀刻基岛露出封装结构成品。Cut the semi-finished products that have been ball-planted in step 18, so that the plastic package modules that were originally integrated in the form of an array assembly and contain chips are cut and separated one by one, and a single-chip flip-chip package is first packaged and then etched. The island exposes the finished package structure.
所述步骤十七对金属基板背面塑封料开孔处进行清洗同时进行金属保护层被覆。The seventeenth step cleans the openings of the plastic encapsulant on the back of the metal substrate and covers the metal protective layer at the same time.
所述引脚与引脚之间跨接无源器件，所述无源器件跨接于引脚正面与引脚正面之间或跨接于引脚背面与引脚背面之间。A passive device is connected between the pins, and the passive device is connected between the front side of the pin and the front side of the pin or between the back side of the pin and the back side of the pin.
所述引脚有多圈。The pins have multiple turns.
所述引脚包括引脚上部、引脚下部和中间阻挡层，所述引脚上部和引脚下部均由单层或多层金属电镀而成，所述中间阻挡层为镍层、钛层或铜层。The pin includes an upper part of the pin, a lower part of the pin and an intermediate barrier layer, the upper part of the pin and the lower part of the pin are formed by electroplating a single layer or multiple layers of metal, and the intermediate barrier layer is a nickel layer, a titanium layer or copper layer.
与现有技术相比，本发明的有益效果是：Compared with prior art, the beneficial effect of the present invention is:
1、本发明不需要使用玻璃纤维层，所以可以减少玻璃纤维层所带来的成本；1. The present invention does not need to use the glass fiber layer, so the cost brought by the glass fiber layer can be reduced;
2、本发明没有使用玻璃纤维层的发泡物质，所以可靠性的等级可以再提高，相对对封装体的安全性就会提高；2. The present invention does not use the foaming material of the glass fiber layer, so the reliability level can be further improved, and the relative safety of the package will be improved;
3、本发明不需要使用玻璃纤维层物质，所以就可以减少玻璃纤维材料所带来的环境污染；3. The present invention does not need to use glass fiber material, so the environmental pollution caused by glass fiber material can be reduced;
4、本发明的二维金属基板线路层所采用的是电镀方法，而电镀层的总厚度约在10~15μm，而线路与线路之间的间隙可以轻松的达到25μm以下的间隙，所以可以真正地做到高密度内引脚线路平铺的技术能力；4. The circuit layer of the two-dimensional metal substrate of the present invention adopts the electroplating method, and the total thickness of the electroplating layer is about 10-15 μm, and the gap between the lines can easily reach a gap below 25 μm, so it can be truly The technical ability to achieve high-density internal pin line tiling;
5、本发明的二维金属基板因采用的是金属层电镀法，所以比玻璃纤维高压铜箔金属层的工艺来得简单，且不会有金属层因为高压产生金属层不平整、金属层破损以及金属层延展移位的不良或困惑；5. The two-dimensional metal substrate of the present invention adopts the metal layer electroplating method, so it is simpler than the glass fiber high-voltage copper foil metal layer process, and there will be no metal layer unevenness, metal layer damage and Poor or confusion in the extension and displacement of the metal layer;
6、本发明的二维金属基板线路层是在金属基材的表面进行金属电镀，所以材质特性基本相同，所以镀层线路与金属基材的内应力基本相同，可以轻松的进行恶劣环境的后工程（如高温共晶装片、高温锡材焊料装片以及高温被动元件的表面贴装工作）而不容易产生应力变形。6. The two-dimensional metal substrate circuit layer of the present invention is metal electroplated on the surface of the metal substrate, so the material characteristics are basically the same, so the internal stress of the plating circuit and the metal substrate is basically the same, and the post-engineering in harsh environments can be easily carried out (such as high-temperature eutectic chip mounting, high-temperature tin solder chip mounting, and surface mount work for high-temperature passive components) and are not prone to stress deformation.
附图说明Description of drawings
图1~图19为本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例1制造方法的各工序示意图。1 to 19 are schematic diagrams of each process of the manufacturing method of Embodiment 1 of the multi-chip flip-chip packaging first and then etching the substrate-less packaging structure of the present invention.
图20（A）为本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例1的结构示意图。FIG. 20(A) is a structural schematic diagram of Embodiment 1 of the multi-chip flip-chip packaging first and then etching substrate-free packaging structure of the present invention.
图20（B）为图20（A）的俯视图。FIG. 20(B) is a top view of FIG. 20(A).
图21（A）为本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例2的结构示意图。FIG. 21(A) is a structural schematic diagram of Embodiment 2 of the multi-chip flip-chip packaging first and then etching baseless island-free packaging structure of the present invention.
图21（B）为图21（A）的俯视图。FIG. 21(B) is a top view of FIG. 21(A).
图22（A）为本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例3的结构示意图。FIG. 22(A) is a structural schematic diagram of Embodiment 3 of the multi-chip flip-chip packaging first and then etching baseless island-free packaging structure of the present invention.
图22（B）为图22（A）的俯视图。Fig. 22(B) is a top view of Fig. 22(A).
图23（A）为本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例4的结构示意图。FIG. 23(A) is a structural schematic diagram of Embodiment 4 of the multi-chip flip-chip packaging first and then etching substrate-free packaging structure of the present invention.
图23（B）为图23（A）的俯视图。FIG. 23(B) is a top view of FIG. 23(A).
图24~图35为传统的高密度基板封装结构的制造工艺流程的各工序示意图。24 to 35 are schematic diagrams of each process of the manufacturing process flow of the traditional high-density substrate packaging structure.
图36为玻璃纤维表面铜箔金属层的蚀刻状况示意图。Fig. 36 is a schematic diagram of the etching status of the copper foil metal layer on the surface of the glass fiber.
其中：in:
引脚1pin 1
芯片2Chip 2
塑封料3Plastic compound 3
小孔4Small hole 4
金属保护层5Metal protection layer 5
金属球6metal ball 6
无源器件7Passive Components 7
金属基板8Metal Substrate 8
铜材薄膜9Copper film 9
光阻膜10Photoresist film 10
惰性金属线路层11Inert metal circuit layer 11
高导电金属层12Highly Conductive Metal Layer 12
底部填充胶13。Underfill glue13.
具体实施方式Detailed ways
本发明多芯片倒装先封装后蚀刻无基岛封装结构及其制造方法如下：In the present invention, the multi-chip flip-chip packaging structure and its manufacturing method are as follows:
实施例1：无基岛单圈引脚Example 1: No Base Island Single Turn Pin
参见图20（A）和图20（B），图20（A）本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例1的结构示意图。图20（B）为图20（A）的俯视图。由图20（A）和图20（B）可以看出，本发明多芯片倒装先封装后蚀刻无基岛封装结构，它包括引脚1和芯片2，所述芯片2有多个，所述多个芯片2倒装于引脚1正面，所述芯片2底部与引脚1正面之间设置有底部填充胶13，所述引脚1外围的区域、引脚1与引脚1之间的区域、引脚1上部和引脚1下部的区域以及芯片2外均包封有塑封料3，所述引脚1下部的塑封料3表面上开设有小孔4，所述小孔4与引脚1背面相连通，所述小孔4内设置有金属球6，所述金属球6与引脚1背面相接触。Referring to FIG. 20(A) and FIG. 20(B), FIG. 20(A) is a schematic structural diagram of Embodiment 1 of the multi-chip flip-chip packaging first and then etching base-less island packaging structure of the present invention. FIG. 20(B) is a top view of FIG. 20(A). It can be seen from Fig. 20(A) and Fig. 20(B) that the multi-chip flip-chip packaging structure of the present invention is first packaged and then etched without base islands. It includes pins 1 and chips 2. There are multiple chips 2, so The plurality of chips 2 are flip-chip on the front of the pin 1, and an underfill glue 13 is provided between the bottom of the chip 2 and the front of the pin 1, and the area around the pin 1, between the pin 1 and the pin 1 The area of the upper part of the pin 1 and the lower part of the pin 1, and the outside of the chip 2 are all encapsulated with a plastic compound 3, and the surface of the plastic compound 3 at the lower part of the pin 1 is provided with a small hole 4, and the small hole 4 is connected with the The back of the pin 1 is connected, and a metal ball 6 is arranged in the small hole 4 , and the metal ball 6 is in contact with the back of the pin 1 .
所述金属球6与引脚1背面之间设置有金属保护层5，所述金属保护层5为抗氧化剂。A metal protection layer 5 is provided between the metal ball 6 and the back of the pin 1, and the metal protection layer 5 is an antioxidant.
所述金属球6材料采用锡或是锡合金。The metal ball 6 is made of tin or tin alloy.
所述引脚1包括引脚上部、引脚下部和中间阻挡层，所述引脚上部和引脚下部均由单层或多层金属电镀而成，所述中间阻挡层为镍层、钛层或铜层。The pin 1 includes an upper part of the pin, a lower part of the pin and an intermediate barrier layer, the upper part of the pin and the lower part of the pin are formed by electroplating a single layer or multiple layers of metal, and the intermediate barrier layer is a nickel layer, a titanium layer or copper layer.
其制造方法如下：Its manufacturing method is as follows:
步骤一、取金属基板Step 1. Take the metal substrate
参见图1，取一片厚度合适的金属基板，金属基板的材质可以依据芯片的功能与特性进行变换，例如：铜材、铁材、镍铁材、锌铁材等。Referring to Figure 1, take a metal substrate with an appropriate thickness. The material of the metal substrate can be changed according to the function and characteristics of the chip, such as copper, iron, nickel-iron, zinc-iron, etc.
步骤二、金属基板表面预镀铜材Step 2. Pre-plating copper on the surface of the metal substrate
参见图2，在金属基板表面电镀一层铜材薄膜，目的是为后续电镀作基础，所述电镀的方式可以采用化学镀或是电解电镀。Referring to FIG. 2 , a layer of copper film is electroplated on the surface of the metal substrate to serve as a basis for subsequent electroplating. The electroplating method can be electroless plating or electrolytic plating.
步骤三、贴光阻膜作业Step 3: Paste the photoresist film
参见图3，利用贴光阻膜设备在完成预镀铜材薄膜的金属基板正面及背面进行光阻膜的被覆，所述光阻膜可以采用湿式光阻膜或干式光阻膜。Referring to FIG. 3 , the photoresist film is coated on the front and back of the metal substrate on which the pre-plated copper film is completed by using a photoresist film sticking device. The photoresist film can be a wet photoresist film or a dry photoresist film.
步骤四、金属基板正面去除部分光阻膜Step 4. Remove part of the photoresist film from the front of the metal substrate
参见图4，利用曝光显影设备在步骤三完成贴膜作业的金属基板正面进行图形曝光、显影以及开窗，以露出金属基板正面后续需要进行电镀的图形区域。Referring to Figure 4, use exposure and development equipment to perform pattern exposure, development, and window opening on the front of the metal substrate that has completed the film attachment operation in step 3, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate.
步骤五、电镀惰性金属线路层Step 5. Electroplating inert metal circuit layer
参见图5，将金属基板正面已完成开窗的图形区域电镀上惰性金属线路层，作为后续蚀刻作业的阻挡层，所述惰性金属线路层材料采用镍、钛或铜等，所述电镀方式采用化学镀或电解电镀方式。Referring to Fig. 5, an inert metal circuit layer is electroplated on the graphic area of the front side of the metal substrate where windows have been opened, as a barrier layer for subsequent etching operations. The material of the inert metal circuit layer is nickel, titanium or copper, etc., and the electroplating method adopts Electroless plating or electrolytic plating.
步骤六、电镀金属线路层Step 6. Plating metal circuit layer
参见图6，在步骤五中的惰性金属线路层表面镀上金属线路层，所述金属线路层电镀完成后即在金属基板正面相对形成引脚上部，所述金属线路层可以是单层或多层，所述金属线路层材料采用银、铝、铜、镍金或镍钯金等，所述电镀方式可以是化学电镀也可以是电解电镀的方式。Referring to Fig. 6, a metal circuit layer is plated on the surface of the inert metal circuit layer in step five, and the upper part of the pin is relatively formed on the front side of the metal substrate after the metal circuit layer is electroplated, and the metal circuit layer can be single-layer or multi-layer. layer, the material of the metal circuit layer is silver, aluminum, copper, nickel-gold or nickel-palladium-gold, etc., and the electroplating method can be chemical electroplating or electrolytic electroplating.
步骤七、去除金属基板表面光阻膜Step 7. Remove the photoresist film on the surface of the metal substrate
参见图7，将金属基板表面的光阻膜去除，去除方法采用化学药水软化并采用高压水喷除的方式。Referring to FIG. 7 , the photoresist film on the surface of the metal substrate is removed by softening with chemical potion and spraying with high-pressure water.
步骤八、装片及芯片底部填充Step 8: Chip loading and chip bottom filling
参见图8，在步骤六相对形成的引脚上部正面倒装上多个芯片，并在芯片底部填充环氧树脂。Referring to FIG. 8 , a plurality of chips are flip-mounted on the upper part of the oppositely formed pins in step six, and epoxy resin is filled at the bottom of the chips.
步骤九、包封Step 9. Encapsulation
参见图9，将完成多个芯片倒装及芯片底部填充后的金属基板正面进行包封塑封料作业，塑封料的包封方式可以采用模具灌胶方式、喷涂设备喷涂方式或刷胶方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。Referring to Figure 9, the front side of the metal substrate after multiple chip flip-chips and chip underfills are encapsulated with plastic encapsulation. The encapsulation of the plastic encapsulation method can be mold pouring, spraying equipment spraying or brushing. The molding compound can be epoxy resin with or without filler.
步骤十、贴光阻膜作业Step 10. Paste photoresist film
参见图10，利用贴膜设备在完成包封塑封料的金属基板正面及背面进行光阻膜的被覆，所述光阻膜可以采用湿式光阻膜或干式光阻膜。Referring to FIG. 10 , the front and back sides of the metal substrate that has been encapsulated with the molding compound are covered with a photoresist film by using a film sticking device, and the photoresist film can be a wet photoresist film or a dry photoresist film.
步骤十一、金属基板背面去除部分光阻膜Step 11. Remove part of the photoresist film on the back of the metal substrate
参见图11，利用曝光显影设备在步骤十完成贴光阻膜作业的金属基板背面进行图形曝光、显影以及开窗，以露出金属基板背面后续需要进行化学蚀刻的图形区域。Referring to Fig. 11, use the exposure and development equipment to perform graphic exposure, development and window opening on the back of the metal substrate where the photoresist film pasting operation has been completed in step ten, so as to expose the pattern area on the back of the metal substrate that needs to be chemically etched later.
步骤十二、化学蚀刻Step 12. Chemical etching
参见图12，将步骤十一中金属基板背面完成开窗的图形区域进行化学蚀刻，化学蚀刻直至惰性金属线路层及包封塑封料的位置为止，蚀刻药水可以采用氯化铜或是氯化铁。Referring to Figure 12, chemically etch the graphic area where the window is opened on the back of the metal substrate in step 11 until the position of the inert metal circuit layer and the encapsulating plastic compound is chemically etched. The etching solution can be copper chloride or ferric chloride .
步骤十三、电镀金属线路层Step 13. Electroplating the metal circuit layer
参见图13，在步骤十二完成化学蚀刻后露出的惰性金属线路层表面进行金属线路层的电镀，金属线路层电镀完成后即在金属基板背面相对形成引脚下部，所述金属线路层可以是单层或多层，所述金属线路层材料采用铜镍金、铜镍银、钯金或金等，所述电镀方法可以是化学电镀或是电解电镀。Referring to Fig. 13, the surface of the inert metal circuit layer exposed after the chemical etching is completed in step 12 is electroplated on the metal circuit layer. After the metal circuit layer is electroplated, the lower part of the pin is relatively formed on the back of the metal substrate. The metal circuit layer can be Single-layer or multi-layer, the material of the metal circuit layer is copper-nickel-gold, copper-nickel-silver, palladium-gold or gold, etc. The electroplating method can be chemical electroplating or electrolytic electroplating.
步骤十四、去除金属基板表面光阻膜Step 14. Remove the photoresist film on the surface of the metal substrate
参见图14，将金属基板表面的光阻膜去除，去除方法采用化学药水软化并采用高压水喷除。Referring to Figure 14, the photoresist film on the surface of the metal substrate is removed by softening with chemical potions and spraying with high-pressure water.
步骤十五、包封Step fifteen, encapsulation
参见图15，将步骤十四去除光阻膜后的金属基板背面进行塑封料的包封作业，包封方式可以采用模具灌胶方式、喷涂设备喷涂方式或是贴膜方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂。Referring to Figure 15, encapsulate the back of the metal substrate after removing the photoresist film in step 14. The encapsulation method can be mold filling, spraying by spraying equipment or film sticking. The plastic encapsulation can be used Epoxy resins with or without fillers.
步骤十六、塑封料表面开孔Step 16. Open holes on the surface of the plastic encapsulant
参见图16，在步骤十五金属基板背面包封塑封料的表面进行后续要植金属球区域的开孔作业，所述开孔方式可以采用干式激光烧结或是湿式化学腐蚀的方法。Referring to FIG. 16 , in Step 15, on the surface of the plastic encapsulating compound on the back of the metal substrate, the hole opening operation of the area to be planted with metal balls is carried out. The hole opening method can be dry laser sintering or wet chemical etching.
步骤十七、清洗Step seventeen, cleaning
参见图17，对步骤十六金属基板背面塑封料开孔处进行清洗以去除氧化物质或油脂物质等，同时可进行金属保护层的被覆，金属保护层采用抗氧化剂。Referring to FIG. 17 , clean the opening of the molding compound on the back of the metal substrate in Step 16 to remove oxidized substances or grease substances, and at the same time, coat the metal protective layer, which uses an antioxidant.
步骤十八、植球Step 18, Planting the ball
参见图18，在步骤十七经过清洗的小孔内植入金属球，金属球与基岛或引脚的背面相接触，所述植球方式可以采用常规的植球机或是采用金属膏印刷再经高温溶解之后即可形成球状体，金属球的材料可以是纯锡或锡合金。Referring to Figure 18, metal balls are implanted in the cleaned holes in step 17, and the metal balls are in contact with the base island or the back of the pins. The ball planting method can be a conventional ball planting machine or metal paste printing After being dissolved at a high temperature, a spherical body can be formed, and the material of the metal ball can be pure tin or tin alloy.
步骤十九、切割成品Step nineteen, cut the finished product
参见图19，将步骤十八完成植球的半成品进行切割作业，使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来，制得单芯片倒装先封装后蚀刻基岛露出封装结构成品。Referring to Figure 19, the semi-finished products that have been ball-planted in step 18 are cut, so that the plastic package modules that are originally integrated in an array form and contain chips are cut and separated one by one to obtain a single-chip flip-chip After packaging, the base island is etched to expose the finished packaging structure.
实施例2、无基岛单圈引脚无源器件Embodiment 2, no base island single-turn pin passive device
参见图21（A）和图21（B），图21（A）本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例2的结构示意图。图21（B）为图21（A）的俯视图。由图21（A）和图21（B）可以看出，实施例2与实施例1的不同之处仅在于：所述引脚1与引脚1之间通过导电粘结物质跨接无源器件7，所述无源器件7可以跨接于引脚1正面与引脚1正面之间，也可以跨接于引脚1背面与引脚1背面之间。Referring to FIG. 21(A) and FIG. 21(B), FIG. 21(A) is a schematic structural diagram of Embodiment 2 of the multi-chip flip-chip packaging first and then etching baseless island packaging structure of the present invention. FIG. 21(B) is a top view of FIG. 21(A). It can be seen from Fig. 21(A) and Fig. 21(B) that the only difference between Embodiment 2 and Embodiment 1 is that the passive connection between pin 1 and pin 1 is bridged by a conductive bonding material. The device 7, the passive device 7 may be connected between the front of the pin 1 and the front of the pin 1, or may be connected between the back of the pin 1 and the back of the pin 1.
实施例3：无基岛多圈引脚Example 3: Multiturn pins without base island
参见图22（A）和图22（B），图22（A）本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例3的结构示意图。图22（B）为图22（A）的俯视图。由图22（A）和图22（B）可以看出，实施例3与实施例1的不同之处仅在于：所述引脚1有多圈。Referring to FIG. 22(A) and FIG. 22(B), FIG. 22(A) is a schematic structural diagram of Embodiment 3 of the multi-chip flip-chip packaging first and then etching the substrate-free packaging structure of the present invention. Fig. 22(B) is a top view of Fig. 22(A). It can be seen from FIG. 22(A) and FIG. 22(B) that the only difference between embodiment 3 and embodiment 1 is that the pin 1 has multiple turns.
实施例4：无基岛多圈引脚无源器件Example 4: Non-base island multi-turn pin passive device
参见图23（A）和图23（B），图23（A）本发明多芯片倒装先封装后蚀刻无基岛封装结构实施例4的结构示意图。图23（B）为图23（A）的俯视图。由图23（A）和图23（B）可以看出，实施例4与实施例2的不同之处仅在于：所述引脚1有多圈。Referring to FIG. 23(A) and FIG. 23(B), FIG. 23(A) is a schematic structural diagram of embodiment 4 of the multi-chip flip-chip packaging first and then etching base-less island packaging structure of the present invention. FIG. 23(B) is a top view of FIG. 23(A). It can be seen from FIG. 23(A) and FIG. 23(B) that the difference between Embodiment 4 and Embodiment 2 lies in that the pin 1 has multiple turns.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210140788.7ACN102881664B (en) | 2012-05-09 | 2012-05-09 | Multi-chip inversely-mounted package-first etching-followed island-free package structure and manufacturing method thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210140788.7ACN102881664B (en) | 2012-05-09 | 2012-05-09 | Multi-chip inversely-mounted package-first etching-followed island-free package structure and manufacturing method thereof |
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| CN102881664Btrue CN102881664B (en) | 2015-06-03 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201210140788.7AActiveCN102881664B (en) | 2012-05-09 | 2012-05-09 | Multi-chip inversely-mounted package-first etching-followed island-free package structure and manufacturing method thereof |
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| CN102376672A (en)* | 2011-11-30 | 2012-03-14 | 江苏长电科技股份有限公司 | Foundation island-free ball grid array packaging structure and manufacturing method thereof |
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| US7704800B2 (en)* | 2006-11-06 | 2010-04-27 | Broadcom Corporation | Semiconductor assembly with one metal layer after base metal removal |
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| CN102376672A (en)* | 2011-11-30 | 2012-03-14 | 江苏长电科技股份有限公司 | Foundation island-free ball grid array packaging structure and manufacturing method thereof |
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