Movatterモバイル変換


[0]ホーム

URL:


CN102820262A - Glass through hole manufacturing and interconnecting method - Google Patents

Glass through hole manufacturing and interconnecting method
Download PDF

Info

Publication number
CN102820262A
CN102820262ACN2012103256576ACN201210325657ACN102820262ACN 102820262 ACN102820262 ACN 102820262ACN 2012103256576 ACN2012103256576 ACN 2012103256576ACN 201210325657 ACN201210325657 ACN 201210325657ACN 102820262 ACN102820262 ACN 102820262A
Authority
CN
China
Prior art keywords
glass substrate
glass
laminated
hole
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012103256576A
Other languages
Chinese (zh)
Inventor
于大全
姜峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Center for Advanced Packaging Co Ltd
Original Assignee
Jiangsu IoT Research and Development Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu IoT Research and Development CenterfiledCriticalJiangsu IoT Research and Development Center
Priority to CN2012103256576ApriorityCriticalpatent/CN102820262A/en
Publication of CN102820262ApublicationCriticalpatent/CN102820262A/en
Pendinglegal-statusCriticalCurrent

Links

Images

Landscapes

Abstract

The invention discloses a glass through hole manufacturing and interconnecting method. The method comprises the following steps of: binding and linking a plurality of glass substrates in a laminated manner through a polymer; manufacturing through holes which are vertical with the surfaces of the laminated glass substrates; metallically filling the through holes of the laminated glass; and unlinking the laminated glass. The method provided by the invention has the advantages that the though holes are simultaneously manufactured in a plurality of the layers of the glass substrates by using a glass substrate laminated linking method, so that the problems of low manufacturing efficiency, expensive cost, low yield and the like caused by the traditional method for manufacturing the through hole by using a single substrate can be solved.

Description

Method for manufacturing and interconnecting glass through holes
Technical Field
The invention relates to a method for manufacturing and interconnecting glass through holes, and belongs to the technical field of microelectronic packaging.
Background
With the development of the demand of electronic products toward miniaturization, multifunction, environmental protection, etc., people strive to make electronic systems smaller and higher in integration and function more and more, thereby generating many new technologies, new materials and new designs, wherein the technologies of the stacked chip Package and the System-in-Package (SiP) are typical representatives of the technologies.
The three-dimensional packaging technology refers to a packaging technology of stacking more than two chips in the same package in a vertical direction without changing the size of the package, and the three-dimensional packaging technology is derived from the laminated packaging of a flash memory (NOR/NAND) and an SDRAM (synchronous dynamic random access memory). Through Silicon Vias (TSV) is one of the key technologies in realizing three-dimensional packaging. This is due to the fact that the TSV can achieve full silicon packaging, is compatible with semiconductor CMOS technology, can increase component density in equal proportion, reduces interconnection delay problems, and achieves high-speed interconnection compared with a traditional interconnection mode.
Compared with a common substrate, the silicon substrate TSV has the advantages that: 1) the aperture of the through hole of the silicon substrate is far smaller than that of the through hole of the printed circuit board; 2) the depth-to-width ratio of the through hole of the silicon substrate is far greater than that of the through hole of the printed circuit board; 3) the density of through-holes of the silicon substrate is much greater than that of through-holes of the printed circuit board. Based on the above characteristics, research thereof plays an extremely important role in the development of MEMS and semiconductor processes.
The Glass substrate TGV (through Glass Via) has the advantages compared with the common silicon substrate: 1) the cost is low; 2) the sealing performance is excellent; 3) the insulativity is better; 4) the high-frequency loss is low; 5) a high modulus; 6) transparent and shows excellent optical performance.
The traditional manufacturing process for TGV pore-forming of the single glass substrate comprises the following steps: 1) drilling holes by ultrasonic waves; 2) a sand blasting method; 3) wet etching; 4) dry etching; 5) laser etching; 6) and (6) mechanically drilling.
However, since the processes used are based on a single glass substrate, there is an impact on the price of the final product, and even many processes still have many problems, where high aspect ratio via fabrication is a key issue. Reliability studies for vias continue. For the through hole manufacturing of the single glass substrate, the manufacturing cost is high and the efficiency is low.
Due to various adverse factors of these single-chip conventional manufacturing methods, the yield and reliability of the product, as well as the final shipping price, are greatly affected. Various new process methods are gradually proposed and discussed, but the methods are all performed on the basis of a single-chip manufacturing process, and have the defects of low manufacturing efficiency, high cost and the like.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method for manufacturing and interconnecting glass through holes, which is used for laminating and bonding multiple layers of glass substrates together and realizing the glass through holes in a mechanical, laser, sand blasting or etching mode and the like so as to effectively finish an interconnection structure adopting a TGV technology in three-dimensional packaging or MEMS packaging.
The technical scheme adopted by the invention comprises a manufacturing method of glass through holes and a manufacturing method of interconnection of the glass through holes.
The manufacturing method of the glass through hole comprises the following steps:
1) laminating and bonding a plurality of glass substrates together by a hot pressing method to form a laminated bonding structure of the multilayer glass substrates;
2) manufacturing a through hole structure vertical to the surface of the laminated glass substrate on the bonded laminated glass substrate;
3) and debonding the laminated glass substrate to separate the glass substrate.
Afterstep 3, each individual glass substrate is cleaned to remove the adhesive, so as to facilitate the subsequent interconnection manufacturing process.
The manufacturing method of the glass through hole interconnection comprises the following steps:
1) laminating and bonding a plurality of glass substrates together by a hot pressing method to form a laminated bonding structure of the multilayer glass substrates;
2) manufacturing a through hole structure vertical to the surface of the laminated glass substrate on the bonded laminated glass substrate;
3) manufacturing an adhesion layer on the side wall of the through hole by adopting a physical deposition or chemical deposition method;
4) filling the through hole of the laminated glass substrate with metallization;
5) and debonding the laminated glass substrate to separate the glass substrate.
Beforestep 3, the laminated glass substrate with the through hole structure is also cleaned to remove the adhesive.
Beforestep 5, chemical mechanical polishing is used to remove the metal on the upper surface of the laminated glass substrate after the metallization filling.
Afterstep 5, each individual glass substrate is thinned to a desired thickness by cleaning and surface planarization polishing.
The material of the adhesion layer is at least one of Ni, Ta, Ti, Pt, Pd, AlN and TiN.
The through hole metallization filling of the laminated glass substrate is realized by means of electroplating, electroless plating, physical deposition or liquid metal filling. The metallization filling adopts one of Cu, Sn, W, Ti, Pt, Pd, Ni and Au as a filling material.
The glass substrate lamination bonding instep 1 of the two methods is realized by a polymer material bonding method, wherein the polymer material is one of Polyimide, SU8 and BCB, and a lamination structure of a multilayer glass substrate and the Polyimide, SU8 or BCB is formed. The through hole is manufactured by adopting one method of mechanical processing, laser processing, sand blasting and drilling or etching. The aperture range of the through hole is 5um-500 um.
In the two methods, the purpose of separating the glass substrate is achieved by dissolving the polymer by using a chemical solution; or the laminated glass substrate is split by using electric sparks, wire cutting, blade cutting and other modes.
The two methods can also comprise a procedure of manufacturing a pattern required by the through hole on the surface of one side of the laminated glass plate substrate before thestep 2.
The invention has the advantages that: the method comprises the steps of realizing lamination bonding of the multilayer glass substrate, manufacturing a vertical through hole structure on the bonded multilayer glass substrate by adopting a mechanical processing method, a laser processing method, a sand blasting drilling method or an etching method, completing through hole metallization filling of the multilayer glass substrate by electroplating, chemical plating, physical deposition and liquid metal filling, and realizing through hole metallization filling of the multilayer glass substrate at one time. The method can greatly shorten the manufacturing time of the glass through hole and greatly reduce the production cost.
Drawings
FIGS. 1(a) - (d) are process flow diagrams of examples of through-glass vias according to the present invention. Wherein,
FIG. 1(a) is a first step of a glass via fabrication method and a glass via interconnect fabrication method;
FIG. 1(b) is a second step of the glass via fabrication method and the glass via interconnect fabrication method;
FIG. 1(c) shows step three of the glass via fabrication method;
fig. 1(d) shows a fourth step of the glass via hole formation method.
Fig. 2(a) - (d) are process flow diagrams of an example of a glass via interconnect of the present invention. Wherein,
FIG. 2(a) shows steps four and five of the method for fabricating a glass via interconnect;
FIG. 2(b) is step six of the glass via interconnect fabrication method;
FIG. 2(c) shows step eight of the glass via interconnect fabrication method;
fig. 2(d) shows a ninth step of the method for fabricating a glass via interconnect.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to specific embodiments and fig. 1 and 2.
A method for manufacturing a glass through hole comprises the following steps:
firstly, the method comprises the following steps: the glass substrate is 200 um glass, and the bonding material is Polyimide. Bonding the multiple layers of glass substrates together by adopting a hot pressing mode to form a laminated structure of the multiple layers of glass substrates andPolyimide 2, as shown in figure 1 (a);
II, secondly: making a pattern required by thethrough hole 3 on the surface of the glass substrate, and making a vertical throughhole 3 structure on the bondedmultilayer glass substrate 1 by using a mechanical processing, laser processing, sand blasting and drilling or etching method, as shown in fig. 1 (b);
thirdly, the method comprises the following steps: cutting and separating the laminated glass substrate along the middle part of the Polyimide by adopting methods such as chemistry, electric spark, wire cutting or blade cutting and the like to form acutting path 4 shown in figure 1 (c);
fourthly, the method comprises the following steps: each individual glass substrate is cleaned for subsequent processing to make interconnections. As shown in fig. 1 (d).
A method for manufacturing glass through hole interconnection comprises the following steps:
firstly, the method comprises the following steps: the glass substrate is 200 um glass, and the bonding material is SU 8. Bonding the multiple glass substrates together by adopting a hot pressing mode to form a laminated structure of the multiple glass substrates and SU 87, as shown in figure 1 (a);
II, secondly: making a pattern required by the throughhole 3 on the surface of the glass substrate, and making a vertical throughhole 3 structure on the bondedmultilayer glass substrate 1 by using a mechanical processing, laser processing, sand blasting and drilling or etching method, as shown in fig. 1 (b);
thirdly, the method comprises the following steps: using SC1 (NH)4+H2O2+H2O) cleaning the multilayer glass substrate with the manufactured throughhole 3 structure to ensure that the surface cleanliness of the throughhole 3 is more suitable for metal deposition;
fourthly, the method comprises the following steps: depositing an adhesion layer such as 200 nm Ti on the sidewall, as shown in FIG. 2 (a);
fifthly: depositing a layer of 1 um Cu as a seed layer on the surface of the adhesion layer, wherein the deposited adhesion layer and theseed layer 5 are shown in figure 2 (a);
sixthly, the method comprises the following steps: filling the throughholes 3 of the laminated glass substrate withmetal Cu 6 by electroplating, chemical plating or physical deposition, as shown in FIG. 2 (b);
seventhly, the method comprises the following steps: removing redundant Cu on the upper surface of the laminated glass substrate by adopting chemical mechanical polishing;
eighthly: cutting and separating the laminated glass substrate along the middle part of SU 87 by adopting methods such as electric spark, wire cutting or blade cutting, and the like to form a cuttingchannel 4 shown in figure 2 (c);
nine: each individual glass substrate was thinned to the desired thickness of 200 um using a cleaning and surface planarization polishing process, as shown in fig. 2 (d).

Claims (14)

CN2012103256576A2012-09-052012-09-05Glass through hole manufacturing and interconnecting methodPendingCN102820262A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN2012103256576ACN102820262A (en)2012-09-052012-09-05Glass through hole manufacturing and interconnecting method

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN2012103256576ACN102820262A (en)2012-09-052012-09-05Glass through hole manufacturing and interconnecting method

Publications (1)

Publication NumberPublication Date
CN102820262Atrue CN102820262A (en)2012-12-12

Family

ID=47304294

Family Applications (1)

Application NumberTitlePriority DateFiling Date
CN2012103256576APendingCN102820262A (en)2012-09-052012-09-05Glass through hole manufacturing and interconnecting method

Country Status (1)

CountryLink
CN (1)CN102820262A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN103247570A (en)*2013-05-102013-08-14华进半导体封装先导技术研发中心有限公司Manufacturing method for silicon through holes and silicon through hole interconnection
CN105160337A (en)*2015-08-312015-12-16上海箩箕技术有限公司Manufacturing method for glass outer cover plate
US9340443B2 (en)2012-12-132016-05-17Corning IncorporatedBulk annealing of glass sheets
US9889635B2 (en)2012-12-132018-02-13Corning IncorporatedFacilitated processing for controlling bonding between sheet and carrier
US10014177B2 (en)2012-12-132018-07-03Corning IncorporatedMethods for processing electronic devices
US10046542B2 (en)2014-01-272018-08-14Corning IncorporatedArticles and methods for controlled bonding of thin sheets with carriers
US10086584B2 (en)2012-12-132018-10-02Corning IncorporatedGlass articles and methods for controlled bonding of glass sheets with carriers
US10510576B2 (en)2013-10-142019-12-17Corning IncorporatedCarrier-bonding methods and articles for semiconductor and interposer processing
US10543662B2 (en)2012-02-082020-01-28Corning IncorporatedDevice modified substrate article and methods for making
CN112340694A (en)*2020-11-032021-02-09中国电子科技集团公司第二十九研究所Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip
US11097509B2 (en)2016-08-302021-08-24Corning IncorporatedSiloxane plasma polymers for sheet bonding
CN113488431A (en)*2021-05-242021-10-08北京大学Preparation method of glass substrate comprising through hole with high depth-to-width ratio
US11167532B2 (en)2015-05-192021-11-09Corning IncorporatedArticles and methods for bonding sheets with carriers
US11192340B2 (en)2014-04-092021-12-07Corning IncorporatedDevice modified substrate article and methods for making
US11331692B2 (en)2017-12-152022-05-17Corning IncorporatedMethods for treating a substrate and method for making articles comprising bonded sheets
CN114686234A (en)*2020-12-302022-07-01伯恩光学(惠州)有限公司Thinning agent for rear cover of glass mobile phone
US11535553B2 (en)2016-08-312022-12-27Corning IncorporatedArticles of controllably bonded sheets and methods for making same
US11905201B2 (en)2015-06-262024-02-20Corning IncorporatedMethods and articles including a sheet and a carrier
US11999135B2 (en)2017-08-182024-06-04Corning IncorporatedTemporary bonding using polycationic polymers
CN119342699A (en)*2024-11-212025-01-21中山芯承半导体有限公司 A method and structure for manufacturing a high aspect ratio glass substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2008004307A1 (en)*2006-07-072008-01-10Fujitsu LimitedBoring method, production method of substrate, and manufacturing method of electronic component
CN102332884A (en)*2010-07-082012-01-25精工电子有限公司The manufacturing approach of glass substrate and the manufacturing approach of electronic unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2008004307A1 (en)*2006-07-072008-01-10Fujitsu LimitedBoring method, production method of substrate, and manufacturing method of electronic component
CN102332884A (en)*2010-07-082012-01-25精工电子有限公司The manufacturing approach of glass substrate and the manufacturing approach of electronic unit

Cited By (26)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US10543662B2 (en)2012-02-082020-01-28Corning IncorporatedDevice modified substrate article and methods for making
US10538452B2 (en)2012-12-132020-01-21Corning IncorporatedBulk annealing of glass sheets
US9340443B2 (en)2012-12-132016-05-17Corning IncorporatedBulk annealing of glass sheets
US9889635B2 (en)2012-12-132018-02-13Corning IncorporatedFacilitated processing for controlling bonding between sheet and carrier
US10014177B2 (en)2012-12-132018-07-03Corning IncorporatedMethods for processing electronic devices
US10086584B2 (en)2012-12-132018-10-02Corning IncorporatedGlass articles and methods for controlled bonding of glass sheets with carriers
CN103247570A (en)*2013-05-102013-08-14华进半导体封装先导技术研发中心有限公司Manufacturing method for silicon through holes and silicon through hole interconnection
US10510576B2 (en)2013-10-142019-12-17Corning IncorporatedCarrier-bonding methods and articles for semiconductor and interposer processing
US11123954B2 (en)2014-01-272021-09-21Corning IncorporatedArticles and methods for controlled bonding of thin sheets with carriers
US10046542B2 (en)2014-01-272018-08-14Corning IncorporatedArticles and methods for controlled bonding of thin sheets with carriers
US11192340B2 (en)2014-04-092021-12-07Corning IncorporatedDevice modified substrate article and methods for making
US11167532B2 (en)2015-05-192021-11-09Corning IncorporatedArticles and methods for bonding sheets with carriers
US11660841B2 (en)2015-05-192023-05-30Corning IncorporatedArticles and methods for bonding sheets with carriers
US11905201B2 (en)2015-06-262024-02-20Corning IncorporatedMethods and articles including a sheet and a carrier
CN105160337A (en)*2015-08-312015-12-16上海箩箕技术有限公司Manufacturing method for glass outer cover plate
US12122138B2 (en)2016-08-302024-10-22Corning IncorporatedSiloxane plasma polymers for sheet bonding
US11097509B2 (en)2016-08-302021-08-24Corning IncorporatedSiloxane plasma polymers for sheet bonding
US12344548B2 (en)2016-08-312025-07-01Corning IncorporatedMethods for making controllably bonded sheets
US11535553B2 (en)2016-08-312022-12-27Corning IncorporatedArticles of controllably bonded sheets and methods for making same
US11999135B2 (en)2017-08-182024-06-04Corning IncorporatedTemporary bonding using polycationic polymers
US11331692B2 (en)2017-12-152022-05-17Corning IncorporatedMethods for treating a substrate and method for making articles comprising bonded sheets
CN112340694B (en)*2020-11-032023-05-12中国电子科技集团公司第二十九研究所Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip
CN112340694A (en)*2020-11-032021-02-09中国电子科技集团公司第二十九研究所Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip
CN114686234A (en)*2020-12-302022-07-01伯恩光学(惠州)有限公司Thinning agent for rear cover of glass mobile phone
CN113488431A (en)*2021-05-242021-10-08北京大学Preparation method of glass substrate comprising through hole with high depth-to-width ratio
CN119342699A (en)*2024-11-212025-01-21中山芯承半导体有限公司 A method and structure for manufacturing a high aspect ratio glass substrate

Similar Documents

PublicationPublication DateTitle
CN102820262A (en)Glass through hole manufacturing and interconnecting method
JP6677380B2 (en) High density organic bridge device and method
CN102024782B (en)Three-dimensional vertical interconnecting structure and manufacturing method thereof
CN101483149B (en) A kind of preparation method of through-silicon via interconnection structure
US7830004B2 (en)Packaging with base layers comprising alloy 42
JP6079992B2 (en) Multi-layer electronic support structure with integral metal core
CN101541145B (en)Processing method of ultra-thin core board in manufacturing of printed circuit board or integrated circuit package substrate
CN102867798A (en)Coreless packaging substrate and manufacturing method thereof
CN102104009B (en)Manufacturing method of three-dimensional silicon-based capacitor
CN101834178B (en) Integrated passive component and manufacturing method thereof
TW201816900A (en)Glass-based electronics packages and methods of forming thereof
US7786573B2 (en)Packaging chip having interconnection electrodes directly connected to plural wafers
US20150156877A1 (en)Strip level substrate including warpage preventing member and method of manufacturing the same
CN106505062A (en)Interconnection substrate, manufacturing method thereof and vertical stacked semiconductor component
CN103681533A (en)Fan-out package comprising bulk metal
CN106057757A (en)Silicon through hole structure and manufacturing method thereeof
CN111799188A (en)Thinning wafer packaging process utilizing TSV and TGV
US20120088334A1 (en)Method for manufacturing semiconductor package
KR102719490B1 (en)Packaging structure and manufacturing method thereof
US20140014398A1 (en)Coreless subtrate and method of manufacturing the same
US20120193809A1 (en)Integrated circuit device and method for preparing the same
CN102548254A (en)Nuclear-free preparation method of chip carrier
TWI391045B (en)Hybrid embedded device structures and fabrication methods thereof
CN118335626B (en) Embedded hybrid structure substrate and manufacturing method thereof
CN114171490A (en)Packaging structure and manufacturing method thereof

Legal Events

DateCodeTitleDescription
C06Publication
PB01Publication
C10Entry into substantive examination
SE01Entry into force of request for substantive examination
ASSSuccession or assignment of patent right

Owner name:JIANGSU CAS INTERNET-OF-THING TECHNOLOGY VENTURE C

Free format text:FORMER OWNER: JIANGSU INTERNET OF THINGS RESEARCH + DEVELOMENT CO., LTD.

Effective date:20130829

C41Transfer of patent application or patent right or utility model
TA01Transfer of patent application right

Effective date of registration:20130829

Address after:214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C

Applicant after:Jiangsu CAS Internet-Of-Thing Technology Venture Capital Co., Ltd.

Address before:214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C

Applicant before:Jiangsu Internet of Things Research & Develoment Co., Ltd.

ASSSuccession or assignment of patent right

Owner name:NATIONAL CENTER FOR ADVANCED PACKAGING

Free format text:FORMER OWNER: JIANGSU CAS INTERNET-OF-THING TECHNOLOGY VENTURE CAPITAL CO., LTD.

Effective date:20140410

C41Transfer of patent application or patent right or utility model
TA01Transfer of patent application right

Effective date of registration:20140410

Address after:214135 Jiangsu Province, Wuxi City Linghu Wuxi national hi tech Industrial Development Zone, Road No. 200 Chinese Sensor Network International Innovation Park building D1

Applicant after:National Center for Advanced Packaging Co., Ltd.

Address before:214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C

Applicant before:Jiangsu CAS Internet-Of-Thing Technology Venture Capital Co., Ltd.

C12Rejection of a patent application after its publication
RJ01Rejection of invention patent application after publication

Application publication date:20121212


[8]ページ先頭

©2009-2025 Movatter.jp