CN102689092A - Solar wafer precision machining method and device using double laser beams - Google Patents
Solar wafer precision machining method and device using double laser beamsDownload PDFInfo
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- CN102689092A CN102689092ACN2012101981320ACN201210198132ACN102689092ACN 102689092 ACN102689092 ACN 102689092ACN 2012101981320 ACN2012101981320 ACN 2012101981320ACN 201210198132 ACN201210198132 ACN 201210198132ACN 102689092 ACN102689092 ACN 102689092A
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Abstract
Description
Technical field
The present invention relates to the laser accurate processing technique field, specifically is a kind of solar wafer precision machining method and device that uses two laser beams.
Background technology
The solar energy power generating industry just in worldwide with unprecedented speed Rapid Expansion.Because solar energy has cleaning, inexhaustible, nexhaustible advantage, this makes it in the energy resource structure of future world, will inevitably occupy important one seat.Improve the generating efficiency of solar cell, and the core topic that to reach economically feasible mass production production be present solar electrical energy generation industry.Laser technology has wide application prospect because of its quick, accurate, contactless and controlled advantage such as fuel factor in the manufacture of solar cells field.The generating efficiency that adopts laser technology to improve solar cell is also to be one of hot research in recent years.
The silicon wafer solar cell be use in the market the widest a kind of.The silicon wafer solar cell be with Silicon Wafer as substrate, form accurate membrane structure on the surface, for example shallow doped layer, passivation layer, protective layer etc.The thickness of these retes generally is no more than 1 micron usually all in nanometer scale.The sphere of action of laser accurate processing mainly is limited in these film layer structures.For the effect of Laser Processing, require working depth accurate, as far as possible little to the heat damage of the material around the machining area simultaneously, the photoelectric transformation efficiency of the battery that could guarantee like this to be processed reaches optimum.Owing to these reasons, the ultrafast laser of selecting the short wavelength usually is as light source, such as pulse width is in nanosecond (10-9Second) even be picosecond (10-12Second) green glow or ultraviolet laser.
At ultraviolet band, the absorption of laser energy mainly occurs in sample surfaces, thus might be only to the surface or in the quite shallow degree of depth, carry out Precision Machining.Adopt ultrashort pulse, laser peak power is very high, and the volatilization of material mainly is directly to be taken place down in the effect of the strong-electromagnetic field of laser by material molecule, simultaneously because the laser action time lack, so thermal diffusion effect can be ignored basically.So, the scope of laser action is basically only in the hot spot of laser.The edge of processing is smoother like this, macroscopical heat damage phenomenons such as the tangible sintering of less generation.
Because laser processing procedure is to utilize the energy of laser with material modification or removal, also will satisfy the process velocity of commercial production condition simultaneously, therefore generally needs higher laser power.In addition, utilizing the ultrafast short wavelength laser of high power that material is added man-hour, meeting is activated plasma simultaneously, and this has shield effectiveness to laser energy; And materials such as semiconductor silicon wafer are bigger to short wavelength's reflectivity, and this has the energy dissipation of quite a few laser to fall in process with regard to meaning.Have again, the ultrafast short wavelength laser of high power, very big to the damage of optical element and material, therefore, be fit to the optical element needs specially treated of high power laser light, thereby cost an arm and a leg.Moreover, superpower laser also has higher requirement to environment for use, and needs often to safeguard.Owing to these reasons, the price of high power short wavelength laser is quite expensive usually, has caused the precise laser tooling cost high.How fully the reasonable use laser energy, under the condition that guarantees machining accuracy and speed, reduce the laser process equipment cost and just seem particularly important.
Summary of the invention
The technical problem that the present invention will solve provides a kind of solar wafer precision machining method and device that uses two laser beams, solves existing laser technology and solar cell, particularly Silicon Wafer solar cell is added the expensive problem of high power ultrashort pulse short wavelength laser that need use man-hour.
Technical scheme of the present invention is:
A kind of solar wafer precision machining method that uses two laser beams; At first with the zone to be processed on the illuminating laser beam irradiation solar wafer that is lower than solar wafer materials processing threshold value, this zone has absorbed photon energy, and material temperature significantly improves; Produce a large amount of carriers simultaneously; With the same area on the processing laser beam irradiation solar wafer, the energy of processing laser beam is higher than solar wafer materials processing threshold value, is used to carry out the processing to wafer material then.
Described illuminating laser beam is pulse laser beam or continuous laser beam; Described processing laser beam is a pulse laser beam.
Described illuminating laser beam is produced or is produced after beam split by a laser instrument by two laser instrument emissions respectively with the processing laser beam.
A kind of solar wafer Precision Machining device that uses two laser beams, it includes irradiating laser device, processing laser instrument, with respect to the beam spread device behind the processing laser output, relatively behind the light beam disperser output and the optics light combination mirror behind the irradiating laser device output, be arranged at the laser scanner and the objective table of laser scanner irradiation end relatively behind the optics light combination mirror.
Described irradiating laser device, processing laser instrument are selected same laser instrument for use; Be provided with adjustable light-dividing device behind the same relatively laser output; Be provided with optical delay device behind one output of adjustable light-dividing device; After described beam spread device is relatively arranged on an output of optical delay device, after described optics light combination mirror is relatively arranged on another output of beam spread device output and adjustable light-dividing device.
Between described beam spread device and the optics light combination mirror, be provided with laser mirror between optics light combination mirror and the laser scanner.
Be provided with lens between described laser scanner and the objective table; Described objective table is provided with vacuum absorption device.
Described adjustable light-dividing device is made up of the optical polarization rotary device and the optical beam-splitter that are provided with in order.
Between described light-dividing device transmission output and the optics light combination mirror, be provided with laser mirror between optics light combination mirror and the laser scanner.
Described vacuum absorption device is selected vacuum tube for use, and the upper surface of described objective table is provided with the locating hole that is communicated with vacuum tube.
Design principle of the present invention is:
Machined material and laser interaction, thus make material temperature or molecular kinetic energy meet or exceed certain threshold value, realize removing through processes such as fusing, decomposition, volatilizations to material character and structural change or material.The temperature of this threshold value and material is relevant with the absorptivity of material for laser light.The temperature of material itself is high more on the one hand, and the molecular kinetic energy of material also just more approaches to process threshold value; The absorptivity of material for laser light is high more on the other hand, and the utilization rate to laser in the process is just high more, so, realizes the material character variation and remove the required laser energy of material just low more.This just is equivalent in a disguised form reduce the threshold value of material.Therefore; Utilize economically, the method for art recognized improves the temperature and the absorptivity of material to be processed; Just can adopt relatively low power laser diode to obtain same processing effect; Perhaps use same laser instrument and improve relevant working (machining) efficiency by a relatively large margin, thereby reduce relevant processing cost greatly.
Advantage of the present invention:
(1), utilize a branch of laser beam irradiation solar wafer that is lower than the materials processing threshold value, make the temperature of wafer raise and the carrier concentration increase, thereby make material increase photonic absorbance; Like this, the laser that wavelength is long, for example infrared light; The absorption degree of depth in material will reduce greatly; Even only absorb on the surface of sample, use the laser of longer wavelength like this, also can realize the processing of accurate film level; And the price of infrared laser is far below short wavelength's ultraviolet and green (light) laser, and this also greatly reduces processing cost.
(2), when illuminating laser beam and processing laser beam come from same laser instrument because the nonlinear effect of two bundle laser stacks, their gross energy is lower than the energy of the single beam laser that reaches equal effect, has equaled to improve the service efficiency of laser energy like this;
(3), when illumination beam and machining beams respectively from the different laser device, the irradiating laser device can be selected the cheaper long wavelength's of price broad pulse or continuous wave laser for use.Because the effect of illumination beam makes the energy service efficiency of processing laser improve greatly, thereby reduces relevant processing cost greatly.
Description of drawings
Fig. 1 is the application structure sketch map of solar wafer Precision Machining device of two laser beams of a LASER Light Source in the embodiment of theinvention 1.
Fig. 2 is the application structure sketch map of solar wafer Precision Machining device of two laser beams of two LASER Light Sources in the embodiment of theinvention 2.
The specific embodiment
See Fig. 1; The solar wafer Precision Machining device of two laser beams of a LASER Light Source, includepulse laser 1, with respect to the adjustable light-dividing device of forming by optical polarizationrotary device 2 and optical beam-splitter 3 ofpulse laser 1 output, be arranged at optical delay device 4 behind the optical beam-splitter 3 reflection outputs, be arranged atfirst laser mirror 5 behind the optical beam-splitter 3 transmission outputs, be arranged at opticslight combination mirror 7 behindfirst laser mirror 5, be arranged atbeam spread device 6 between optical delay device 4 and the opticslight combination mirror 7, be arranged atsecond laser mirror 8 and laser scanner 9 behind the optics light combination mirror in order, relatively laser scanner 9 irradiation ends objective table 10 and be arranged at laser scanner and objective table betweenlens 11; The upper surface of objective table 10 is provided with some locating holes, and objective table 10 is provided withvacuum tube 12, andvacuum tube 12 is connected with locating hole on the objective table 10; The other end thatvacuum tube 13 does not link to each other with locating hole links to each other with negative pressure equipment, and the negative pressure that negative pressure equipment produces can be fixed insample 13 on the objective table 10.
See Fig. 1, the solar wafer precision machining method of two laser beams of a LASER Light Source may further comprise the steps:
The output ofpulse laser 1 produces the short laser beam of pulse width; Laser beam is divided into the irradiating laser light beam and processes laser beam after through the adjustable beam splitting system of being made up of optical polarizationrotary device 2 and optical beam splitting device 3; The processing laser beam forms the two-beam of conllinear spatially through joining through opticsbeam merging apparatus 7 behind adjustable optical deferred mount 4, thebeam spread device 6 and through the irradiating laser light beam offirst laser mirror 5 successively, and two-beam is all successively throughsecond laser mirror 8 and laser scanner 9 then; Laser scanner 9 scans the sample on the objective table 10 13 according to the figure of setting, thus the shape that onsample 13, obtains setting.The below of laser scanner 9 is provided with objective table 10; 9 of objective table 10 and laser scanners are provided withlens 11;Lens 11 are used to keep the focus of laser to be positioned at the surface ofsample 13, the angle and the linear relationship of hot spot betweensample 13 surperficial shift positions of correcting laser scanner 9 simultaneously always.
Zone to be processed on the irradiating laser light beam irradiatessample 13, this zone produces a large amount of photo-generated carriers owing to absorbed photon energy, and material temperature also can significantly improve simultaneously, and the irradiating laser light beam irradiates needn't reach the processing threshold value of sample 13.Because the radiation of irradiating laser light beam, processing laser beam realize that the required power of processing will significantly descend.This is to come from specimen material under high carrier concentration, high temperature, photon absorption efficiency to be improved on the one hand, is that at high temperature its molecular kinetic energy is original just more approached relevant threshold value for specimen material on the other hand.This comes the material character of sample is carried out modification with regard to being equivalent to utilize the first bundle laser beam, and the sample after utilizing the second bundle laser beam to the material character modification is again processed.Reaching under the situation of same processing effect, adopting two bundle laser beams, the gross energy of this two bundles laser beam is less than and adopts the directly required energy of processing of beam of laser light beam.So, just can adopt relatively low power laser diode to obtain same process velocity, perhaps use same laser instrument and improve relevant process velocity by a relatively large margin, thereby reduce relevant processing cost greatly.And because temperature raises and carrier concentration increases, material increases photonic absorbance; Like this, the laser that wavelength is long, for example infrared light; The absorption degree of depth in material will reduce greatly; Even only absorb on the surface of sample, use the laser of longer wavelength like this, also can realize the processing of accurate film level.And the price of infrared laser is far below short wavelength's ultraviolet and green (light) laser, and this also greatly reduces processing cost.
See Fig. 2; The solar wafer Precision Machining device of two laser beams of two LASER Light Sources, includeprocessing laser instrument 1, irradiatinglaser device 2, with respect to the beam spread device 3 ofprocessing laser instrument 1 output, with respect to the opticslight combination mirror 5 of irradiatinglaser device 2 outputs, be arranged at first laser mirror 4 between beam spread device 3 and the opticslight combination mirror 5, be set in turn insecond laser mirror 6 andlaser scanner 7 behind the optics light combination mirror 3, relativelylaser scanner 7 irradiation ends objective table 8 and be arranged atlaser scanner 7 and objective table 8 between be provided with lens 9; The upper surface of objective table 8 is provided with some locating holes, and objective table 8 is provided withvacuum tube 10, andvacuum tube 10 is connected with locating hole on the objective table 8; The other end thatvacuum tube 10 does not link to each other with locating hole links to each other with negative pressure equipment, and the negative pressure that negative pressure equipment produces can be fixed insample 11 on the objective table 8.Processing laser instrument 1 is the short pulse laser of pulse width, to help the Precision Machining tosample 11; Irradiatinglaser device 2 is the continuous wave laser or the pulse laser of pulse width broad.
See Fig. 2, the solar wafer precision machining method of two laser beams of two LASER Light Sources may further comprise the steps:
The processing laser beam that processinglaser instrument 1 produces is input toMultiplexing apparatus 5 through the beam spread device 3 and first laser mirror 4 successively; The irradiating laser light beam that irradiatinglaser device 2 produces is joined with the processing laser beam throughMultiplexing apparatus 5 and is formed the two-beam of conllinear spatially, and then successively throughsecond laser mirror 6 and laser scanner 7.Laser scanner 7 scans the sample on the objective table 8 11 according to the figure of setting, thus the shape that onsample 11, obtains setting.The below oflaser scanner 7 is provided with objective table 8; 7 of objective table 8 and laser scanners are provided with lens 9; Lens 9 are used to keep the focus of laser to be positioned at the surface ofsample 11, the angle and the linear relationship of hot spot betweensample 11 surperficial shift positions of correctinglaser scanner 7 simultaneously always.
Zone to be processed on the irradiating laser light beam irradiatessample 11, this zone produces a large amount of photo-generated carriers owing to absorbed photon energy, and material temperature also can significantly improve simultaneously, and the irradiating laser light beam irradiates needn't reach the processing threshold value of sample 11.Because the radiation of irradiating laser light beam, the processing laser beam realizes that the requirement of the energy that processing is required will significantly descend.This is to come from specimen material under high carrier concentration, high temperature, photon absorption efficiency to be improved on the one hand, is that at high temperature its molecular kinetic energy is original just more approached relevant threshold value for specimen material on the other hand.This comes the material character of sample is carried out modification with regard to being equivalent to utilize the first bundle laser beam, and the sample after utilizing the second bundle laser beam to the material character modification is again processed.So, just can adopt relatively low power laser diode to obtain same process velocity, perhaps use same laser instrument and improve relevant process velocity by a relatively large margin, thereby reduce relevant processing cost greatly.And because temperature raises and carrier concentration increases, material increases photonic absorbance; Like this, the laser that wavelength is long, for example infrared light; The absorption degree of depth in material will reduce greatly; Even only absorb on the surface of sample, use the laser of longer wavelength like this, also can realize the processing of accurate film level.And the price of infrared laser is far below short wavelength's ultraviolet and green (light) laser, and this also greatly reduces processing cost.
Claims (10)
1. solar wafer precision machining method that uses two laser beams; It is characterized in that: at first with the zone to be processed on the illuminating laser beam irradiation solar wafer that is lower than solar wafer materials processing threshold value, this zone has absorbed photon energy, and material temperature significantly improves; Produce a large amount of carriers simultaneously; With the same area on the processing laser beam irradiation solar wafer, the energy of processing laser beam is higher than solar wafer materials processing threshold value, is used to carry out the processing to wafer material then.
2. a kind of solar wafer precision machining method that uses two laser beams according to claim 1, it is characterized in that: described illuminating laser beam is pulse laser beam or continuous laser beam; Described processing laser beam is a pulse laser beam.
3. a kind of solar wafer precision machining method that uses two laser beams according to claim 1 is characterized in that: described illuminating laser beam is produced or is produced after beam split by a laser instrument by two laser instrument emissions respectively with the processing laser beam.
4. solar wafer Precision Machining device that uses two laser beams is characterized in that: it includes irradiating laser device, processing laser instrument, with respect to the beam spread device behind the processing laser output, relatively behind the light beam disperser output and the optics light combination mirror behind the irradiating laser device output, be arranged at the laser scanner and the objective table of laser scanner irradiation end relatively behind the optics light combination mirror.
5. according to right 4 described a kind of solar wafer Precision Machining devices that use two laser beams; It is characterized in that: described irradiating laser device, processing laser instrument are selected same laser instrument for use; Be provided with adjustable light-dividing device behind the same relatively laser output; Be provided with optical delay device behind one output of adjustable light-dividing device; After described beam spread device is relatively arranged on an output of optical delay device, after described optics light combination mirror is relatively arranged on another output of beam spread device output and adjustable light-dividing device.
6. according to the described a kind of solar wafer Precision Machining devices that use two laser beams of right 4, it is characterized in that: between described beam spread device and the optics light combination mirror, be provided with laser mirror between optics light combination mirror and the laser scanner.
7. according to right 4 described a kind of solar wafer Precision Machining devices that use two laser beams, it is characterized in that: be provided with lens between described laser scanner and the objective table; Described objective table is provided with vacuum absorption device.
8. according to right 5 described a kind of solar wafer Precision Machining devices that use two laser beams, it is characterized in that: described adjustable light-dividing device is made up of the optical polarization rotary device and the optical beam-splitter that are provided with in order.
9. according to the described a kind of solar wafer Precision Machining devices that use two laser beams of right 5, it is characterized in that: between described light-dividing device transmission output and the optics light combination mirror, be provided with laser mirror between optics light combination mirror and the laser scanner.
10. according to right 7 described a kind of solar wafer Precision Machining devices that use two laser beams, it is characterized in that: described vacuum absorption device is selected vacuum tube for use, and the upper surface of described objective table is provided with the locating hole that is communicated with vacuum tube.
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| CN102916081A (en)* | 2012-10-19 | 2013-02-06 | 张立国 | Edge deletion method for thin-film solar cells |
| CN109483050A (en)* | 2018-11-16 | 2019-03-19 | 江苏瑞驰机电科技有限公司 | The device of laser boring and laser cleaning is realized using laser reversal |
| CN109817761A (en)* | 2019-01-02 | 2019-05-28 | 武汉帝尔激光科技股份有限公司 | A kind of method and system of multiwavelength laser timesharing ablation solar battery deielectric-coating |
| CN111716004A (en)* | 2020-06-19 | 2020-09-29 | 西安交通大学 | Femtosecond-nanosecond ultrapulsed laser planarization processing system for ceramic matrix composites |
| CN111822886A (en)* | 2020-06-11 | 2020-10-27 | 华东师范大学重庆研究院 | A multi-focus ultrafast laser preparation device and method for a microfluidic chip microchannel |
| CN112404706A (en)* | 2021-01-22 | 2021-02-26 | 武汉大学 | Laser processing detection device and method, laser processing equipment and focusing control method |
| TWI733588B (en)* | 2020-09-11 | 2021-07-11 | 財團法人工業技術研究院 | Laser processing system |
| CN114192987A (en)* | 2020-09-02 | 2022-03-18 | 上海新微技术研发中心有限公司 | Laser processing apparatus and method |
| CN116252054A (en)* | 2023-04-28 | 2023-06-13 | 杭州银湖激光科技有限公司 | A kind of laser cutting method of glass |
| CN116532808A (en)* | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | Method for locally changing carrier concentration on surface of inorganic nonmetallic material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102916081A (en)* | 2012-10-19 | 2013-02-06 | 张立国 | Edge deletion method for thin-film solar cells |
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| CN111716004A (en)* | 2020-06-19 | 2020-09-29 | 西安交通大学 | Femtosecond-nanosecond ultrapulsed laser planarization processing system for ceramic matrix composites |
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| TWI733588B (en)* | 2020-09-11 | 2021-07-11 | 財團法人工業技術研究院 | Laser processing system |
| US11914269B2 (en) | 2020-09-11 | 2024-02-27 | Industrial Technology Research Institute | Laser processing system |
| CN112404706A (en)* | 2021-01-22 | 2021-02-26 | 武汉大学 | Laser processing detection device and method, laser processing equipment and focusing control method |
| CN116252054A (en)* | 2023-04-28 | 2023-06-13 | 杭州银湖激光科技有限公司 | A kind of laser cutting method of glass |
| CN116532808A (en)* | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | Method for locally changing carrier concentration on surface of inorganic nonmetallic material |
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