Movatterモバイル変換


[0]ホーム

URL:


CN102636931A - Electro-chromic layer, coated element and preparation method of coated element - Google Patents

Electro-chromic layer, coated element and preparation method of coated element
Download PDF

Info

Publication number
CN102636931A
CN102636931ACN2011100384845ACN201110038484ACN102636931ACN 102636931 ACN102636931 ACN 102636931ACN 2011100384845 ACN2011100384845 ACN 2011100384845ACN 201110038484 ACN201110038484 ACN 201110038484ACN 102636931 ACN102636931 ACN 102636931A
Authority
CN
China
Prior art keywords
electrochromic layer
plated film
layer
base material
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100384845A
Other languages
Chinese (zh)
Inventor
张新倍
陈文荣
蒋焕梧
陈正士
黄嘉�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co LtdfiledCriticalHongfujin Precision Industry Shenzhen Co Ltd
Priority to CN2011100384845ApriorityCriticalpatent/CN102636931A/en
Priority to TW100105884Aprioritypatent/TW201234920A/en
Priority to US13/166,323prioritypatent/US20120206789A1/en
Publication of CN102636931ApublicationCriticalpatent/CN102636931A/en
Pendinglegal-statusCriticalCurrent

Links

Images

Classifications

Landscapes

Abstract

The invention claims an electro-chromic layer, a coated element with the electro-chromic layer and a preparation method of the electro-chromic layer. The electro-chromic layer is an A-doped tungsten oxide layer, wherein A is one or more of molybdenum, niobium and titanium; in the electro-chromic layer, the A atom percent content is 4-12%, and the discoloration voltage of the electro-chromic layer is 2.1-2.8V. The electro-chromic layer provided by the invention is made from the A-doped tungsten oxide; the tungsten oxide has good reversibility in the process of applying and removing the electric field, and can be used for effectively improving the service life of the coated element.

Description

The preparation method of electrochromic layer, plated film spare and this plated film spare
Technical field
The present invention relates to a kind of electrochromic layer, have the preparation method of plated film spare and this plated film spare of this electrochromic layer.
Background technology
Electrochromic material is under impressed voltage or effect of electric field, and reversible variation can take place for the color of material or transparency.When voltage that adds or electric field disappearance, the color or the transparency of material return back to original state.Electrochomeric films has memory function, is widely used in fields such as display device, dimming glass, information stores and decorative appearance.Existing plated film spare with colour change function comprises base material and is formed at the electrochomeric films on the base material that said electrochomeric films generally includes first transparency conducting layer, electrochromic layer, ion conductive layer, ion storage and second transparency conducting layer that stacks gradually.This first and second transparency conducting layer is used to apply electric field, and under the effect of extra electric field, the ion in said ion conductive layer and the ion storage gets into electrochromic layer, said electrochromic layer generation redox reaction, thus color changes.
Mostly existing electrochromic layer is that the organic electrochromic material processes.Redox reaction takes place in the organic electrochromic material under effect of electric field, the light absorption transmitance of electrochomeric films is changed and color is changed.Yet the reversibility of organic electrochromic material is relatively poor, causes in the process that this electrochromic layer uses unstablely, and serviceable life is shorter.
Summary of the invention
In view of this, be necessary to provide a kind of stable height and serviceable life long electrochromic layer.
Also be necessary to provide a kind of plated film spare with above-mentioned electrochromic layer.
In addition, also be necessary to provide a kind of preparation method of above-mentioned plated film spare.
A kind of electrochromic layer; This electrochromic layer is the tungsten oxide layer that A mixes; Wherein A is one or more in molybdenum, niobium and the titanium, and in this electrochromic layer, the A atomic percentage conc is 4~12%; The variable color voltage of this electrochromic layer is 2.1~2.8V, and said electrochromism layer thickness is 500~800nm.
A kind of plated film spare comprises electrochromic layer, and this electrochromic layer is the tungsten oxide layer that A mixes; Wherein A is one or more in molybdenum, niobium and the titanium; In this electrochromic layer, the atomic percentage conc of A is 4~12%, and the variable color voltage of this electrochromic layer is 2.1~2.8V.
A kind of preparation method of plated film spare may further comprise the steps:
The base material, vacuum coating equipment and the alloy target material that have transparency conducting layer are provided, and this alloy target material is the tungsten of doping A, and A is at least a in molybdenum, niobium and the titanium, and the A atomic percentage conc is 5~15%;
Base material and alloy target material are installed in the vacuum coating equipment;
Aerating oxygen, plated film forms electrochromic layer on base material, and the variable color voltage of this electrochromic layer is 2.1~2.8V.
Electrochromic layer of the present invention adopts the tungsten oxide of doping A to process, and this tungsten oxide applies electric field and removes in the process of electric field, has good reversibility, can improve the serviceable life of electrochromic layer effectively.
Description of drawings
Fig. 1 is the cut-open view of the present invention's one preferred embodiment plated film spare;
Fig. 2 is the synoptic diagram of the present invention's one preferred embodiment vacuum coating equipment.
The main element symbol description
Plated film spare 10
Base material 11
Firsttransparency conducting layer 12
Electrochromic layer 13
Ionconductor layer 14
Ion storage 15
Secondtransparency conducting layer 16
Vacuum coating equipment 20
Coatingchamber 21
Alloytarget material 23
Embodiment
See also Fig. 1, the plated film spare of preferred embodiments of thepresent invention 10, it comprisesbase material 11 and firsttransparency conducting layer 12,electrochromic layer 13,ion conductor layer 14, ion storage 15 and secondtransparency conducting layer 16 that stack gradually.Said firsttransparency conducting layer 12 and secondtransparency conducting layer 16 are used for this platedfilm spare 10 is applied electric field, make it to take place variable color.Thision conductor layer 14 and ion storage 15 are used under the effect of extra electric field, for thiselectrochromic layer 13 electronics and ion being provided, and makeelectrochromic layer 13 redox reaction take place and variable color.
This firsttransparency conducting layer 12 is that (Indiumtin oxide, ITO) or aluminum zinc oxide transparent conductive film (AZO), it can adopt sputter or vapor deposition indium tin oxide or aluminum zinc oxide to form to indium tin oxide transparent conductive semiconductor film.
Thision conductor layer 14 is by LiTaO3Or LiNbO3Form through the collosol and gel mode.
This ion storage 15 is by V2O5, NiOxDeng forming through sputter or collosol and gel mode.
This secondtransparency conducting layer 16 is indium tin oxide transparent conductive semiconductor film or aluminum zinc oxide transparent conductive film glass, and it can adopt the mode of sputter or vapor deposition to form.
(wolframium oxide, the symbol of element are WO to the tungsten oxide that thiselectrochromic layer 13 mixes for A3), wherein A can be one or more in molybdenum (molybdnum, the symbol of element are Mo), niobium (niobium, the symbol of element are Nb), the titanium (titanium, the symbol of element are Ti); The A atomic percentage conc is 4~12% in thiselectrochromic layer 13, and the thickness of thiselectrochromic layer 13 can be 500~800nm, and its variable color voltage is 2.1~2.8V.Saidelectrochromic layer 13 can adopt the mode of magnetron sputtering to form.A behind the said doped with tungstic oxide, because the atomic radius of A radius and tungsten is close, the growing up of inhibition tungsten oxide crystal grain when forming electrochromic layer, grain refinement has increased the access way of ion.In addition, because the existence of A destroys part W-O-W key, under the effect of extra electric field, more help the turnover of ion, thereby reduced critical variable color voltage.This tungsten oxide applies electric field and removes in the process of electric field, has good reversibility, has improved the stability ofelectrochromic layer 13, thereby has improved its serviceable life.
The material of thisbase material 11 can be stainless steel, aluminium alloy, magnesium alloy, glass, pottery or plastics.
The preparation method of the plated film spare of preferred embodiments of thepresent invention 10 mainly comprises the steps:
Adopt sputter or vapor deposition indium tin oxide or aluminum zinc oxide onbase material 11, to form said firsttransparency conducting layer 12.
Adopt magnetron sputtering method on firsttransparency conducting layer 12, to form said electrochromic layer 13 (will combine accompanying drawing 2 to specify).Onelectrochromic layer 13, formion conductor layer 14 through the collosol and gel mode.
Form said ion storage 15 through sputter or collosol and gel mode.
Adopt sputter or vapor deposition indium tin oxide or aluminum zinc oxide onbase material 11, to form said firsttransparency conducting layer 12.
See also Fig. 2, thebase material 11,vacuum coating equipment 20 and thealloy target material 23 that have transparency conducting layer are provided, thisbase material 11 is processed by stainless steel, aluminium alloy, magnesium alloy, glass, pottery or plastics.Thisvacuum coating equipment 20 is provided with coating chamber 21.Saidalloy target material 23 is for being doped with the tungsten material of A, and wherein A can be one or more in molybdenum, niobium, the titanium; The atomic percentage conc of A is 4~12% in this electrochromic layer 13.Thisalloy target material 23 makes in the following manner: the configuration mixed powder, and to account for the total atom ratio of counting be 5-15% to A in this mixed powder, surplus is a tungsten; With above-mentioned mixed powder 1.0~20 * 105A base substrate is processed in hot pressing under the pressure of N, gets final product through 1700~2000 ℃ of sintering 1.5~3.0h.
Cleaning is to remove the spot onbase material 11 surfaces, and in the preferred embodiment of the present invention, thisbase material 11 is put into absolute ethyl alcohol and carried out ultrasonic cleaning, and scavenging period can be 5~10min.
Argon plasma is carried out on the surface of the base material after above-mentionedprocessing 11 clean, with the greasy dirt on furtherremoval base material 11 surfaces, and the adhesion that improvesbase material 11 surfaces and subsequentfilm.Base material 11 is put into thecoating chamber 21 of avacuum coating equipment 20, thiscoating chamber 21 is evacuated to 5.0~3.0 * 10-5Torr; Incoating chamber 21, feeding flow then is the argon gas (purity is 99.999%) of 200~400sccm (standard state ml/min); And apply-200~-300V be biased inbase material 11, argon plasma is carried out onbase material 11 surfaces cleans, scavenging period is 10~20min.
Adopt magnetron sputtering method at the saidelectrochromic layer 13 of deposition on the transparent conductive film of thebase material 11 after the argon plasma cleaning.
The power of saidalloy target material 23 can be 2.5~3.5kw; With oxygen is reacting gas, and the flow of oxygen is 50~75sccm, is working gas with the argon gas; The flow of argon gas is 300~400sccm; The bias voltage thatbase material 11 is applied is-100~-200V, heating the temperature that saidcoating chamber 21 makesbase material 11 is 300~400, the plated film time can be 30~60min.The thickness of saidelectrochromic layer 13 can be 500~800nm.
When thiselectrochromic layer 13 was applied the voltage of 2.1~2.8V, Li+ ion in the ionconductive layer 14 and electronics got in thiselectrochromic layer 13, and part tungsten is reduced into+5 valencys from+6 valencys, and thiselectrochromic layer 13 is by the colourless blueness that becomes.When removing extra electric field, said ion and electronics disappear, and tungsten is oxidized to+6 valencys from+5 valencys, and thiselectrochromic layer 13 is become colorless by blueness.
Come the preparation ofelectrochromic layer 13 of the present invention is specified through embodiment below.
Embodiment 1
The employedvacuum coating equipment 20 of present embodiment is the medium frequency magnetron sputtering coating machine, and company limited produces for south, Shenzhen innovation vacuum technique, and model is SM-1100H.
The material of the employedbase material 11 of present embodiment is a stainless steel; A is molybdenum and titanium in the saidalloy target material 23, and wherein the atomic percentage conc of molybdenum among the A and titanium is molybdenum 5% and titanium 5%, the tungsten powder body of surplus, and thisalloy target material 23 is processed through 1800 sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 10min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 60sccm, and the flow of argon gas is 300sccm, and bias voltage is-100V, and coating temperature is 250, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 1 are 600~700nm, and mean value is 640nm.When between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying the voltage of 2.4~2.6V, thiselectrochromic layer 13 is by the colourless blueness that becomes.
Embodiment 2
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is an aluminium alloy; A is molybdenum, niobium and titanium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 2%, niobium 1% and titanium 3%, the tungsten powder body of surplus, and thisalloy target material 23 is processed through 1850 sintering 1.5h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 10min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3.5kw, and the flow of oxygen is 50sccm, and the flow of argon gas is 300sccm, and bias voltage is-150V, and coating temperature is 200 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 2 are 650~800nm, and mean value is 655nm, and thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.5V voltage.
Embodiment 3
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is molybdenum, niobium and titanium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 5%, niobium 2%, titanium 6%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1900 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 20min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 250 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 3 are 550~650nm, and average thickness is 590nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.1~2.4V voltage.
Embodiment 4
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a stainless steel; A is molybdenum, niobium and titanium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 3%, niobium 3% and titanium 3%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1950 ℃ of sintering 1.5h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 10min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4.5kw, and the flow of oxygen is 60sccm, and the flow of argon gas is 300sccm, and bias voltage is-150V, and coating temperature is 200 ℃, and the plated film time is 45min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 3 are 500~650nm, and average thickness is 590nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.5V voltage.
Embodiment 5
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is molybdenum and niobium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 5% and niobium 3%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1950 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 5 are 500~600nm, and average thickness is 565nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.5~2.8V voltage.
Embodiment 6
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a molybdenum in the saidalloy target material 23, and each atomic percentage conc of A is a molybdenum 15%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1900 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 5 are 500~600nm, and average thickness is 570nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.6V voltage.
Embodiment 7
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a niobium in the saidalloy target material 23, and each atomic percentage conc of A is a niobium 5%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1800 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3.5kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 7 are 500~600nm, and average thickness is 540nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.4~2.7V voltage.
Embodiment 8
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a niobium in the saidalloy target material 23, and each atomic percentage conc of A is a niobium 15%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1950 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4.5kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 8 are 500~600nm, and average thickness is 555nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.5V voltage.
Embodiment 9
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a titanium in the saidalloy target material 23, and each atomic percentage conc of A is a titanium 5%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1700 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 9 are 500~600nm, and average thickness is 530nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.5~2.8V voltage.
Embodiment 10
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a titanium in the saidalloy target material 23, and each atomic percentage conc of A is a titanium 15%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1800 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3.5kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made byembodiment 10 are 500~600nm, and average thickness is 520nm.Between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, apply 2.3~2.7V, thiselectrochromic layer 13 is by the colourless blueness that becomes during making alive.
Be appreciated that said firsttransparency conducting layer 12 can omit whenbase material 11 is processed by conductive material.
Preferred embodiments plated film spare 10 of the present invention is at the surfacedeposition electrochromic layer 13 ofbase material 11, and thisalloy target material 23 doping A have reduced the variable color voltage ofelectrochromic layer 13, make it have excellent more discoloration; And thiselectrochromic layer 13 has good reversibility, can improve the serviceable life of plated film spare 10 effectively.
In addition, those skilled in the art also can make various modifications, interpolation and the replacement on other form and the details in claim of the present invention scope of disclosure and spirit.Certainly, these all should be included within the present invention's scope required for protection according to the variations such as various modifications, interpolation and replacement that the present invention's spirit is made.

Claims (10)

CN2011100384845A2011-02-152011-02-15Electro-chromic layer, coated element and preparation method of coated elementPendingCN102636931A (en)

Priority Applications (3)

Application NumberPriority DateFiling DateTitle
CN2011100384845ACN102636931A (en)2011-02-152011-02-15Electro-chromic layer, coated element and preparation method of coated element
TW100105884ATW201234920A (en)2011-02-152011-02-22Electrochromic layer, coated article having same, and method for making the article
US13/166,323US20120206789A1 (en)2011-02-152011-06-22Coated article and method for making the same

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN2011100384845ACN102636931A (en)2011-02-152011-02-15Electro-chromic layer, coated element and preparation method of coated element

Publications (1)

Publication NumberPublication Date
CN102636931Atrue CN102636931A (en)2012-08-15

Family

ID=46621371

Family Applications (1)

Application NumberTitlePriority DateFiling Date
CN2011100384845APendingCN102636931A (en)2011-02-152011-02-15Electro-chromic layer, coated element and preparation method of coated element

Country Status (3)

CountryLink
US (1)US20120206789A1 (en)
CN (1)CN102636931A (en)
TW (1)TW201234920A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN103144380A (en)*2013-03-222013-06-12中国南玻集团股份有限公司Three-silver light-adjusting glass
CN103145347A (en)*2013-03-222013-06-12中国南玻集团股份有限公司Double-silver light-dimming glass
WO2015032200A1 (en)*2013-09-052015-03-12华为技术有限公司All-solid-state electrochromic composite device and manufacturing method therefor
CN109154756A (en)*2016-07-072019-01-04株式会社Lg化学Electrochromic device and method of manufacturing the same
CN111065758A (en)*2017-09-082020-04-24依视路国际公司Durable electrochromic devices including tungsten oxide films prepared in high ion bombardment and low pressure deposition environments and methods of making the same
CN111286710A (en)*2020-03-302020-06-16天津耀皮工程玻璃有限公司V for electrochromic-based glass2O5Preparation method of multi-layer ion storage layer
CN113759624A (en)*2021-09-092021-12-07宁波伯宇科技有限公司 A process for manufacturing curved electrochromic lenses
CN116445872A (en)*2023-04-192023-07-18合肥工业大学 An amorphous molybdenum-doped tungsten oxide electrochromic material and its preparation method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2015013631A2 (en)*2013-07-252015-01-29Hpo Assets LlcElectrochromic films and related methods thereof
US20210271145A1 (en)*2020-02-252021-09-02Sage Electrochromics, Inc.Approaches to modifying a color of an electrochromic stack in a tinted state

Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4009935A (en)*1975-07-111977-03-01Rca CorporationElectrochromic device having a dopant therein to improve its color center absorption characteristics
CN1705045A (en)*2004-05-292005-12-07李云平Technological process for preparing flexible conducting material by vacuum sputtering
US20070183066A1 (en)*1994-05-052007-08-09Donnelly CorporationSignal mirror system for a vehicle
CN101188886A (en)*2007-12-142008-05-28北京航空航天大学 An inorganic all-solid-state electrochromic element and its preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4009935A (en)*1975-07-111977-03-01Rca CorporationElectrochromic device having a dopant therein to improve its color center absorption characteristics
US20070183066A1 (en)*1994-05-052007-08-09Donnelly CorporationSignal mirror system for a vehicle
CN1705045A (en)*2004-05-292005-12-07李云平Technological process for preparing flexible conducting material by vacuum sputtering
CN101188886A (en)*2007-12-142008-05-28北京航空航天大学 An inorganic all-solid-state electrochromic element and its preparation method

Cited By (16)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN103145347A (en)*2013-03-222013-06-12中国南玻集团股份有限公司Double-silver light-dimming glass
CN103144380B (en)*2013-03-222016-08-03中国南玻集团股份有限公司Three silver medal dimming glass
CN103145347B (en)*2013-03-222016-12-28中国南玻集团股份有限公司Double silver dimming glass
CN103144380A (en)*2013-03-222013-06-12中国南玻集团股份有限公司Three-silver light-adjusting glass
WO2015032200A1 (en)*2013-09-052015-03-12华为技术有限公司All-solid-state electrochromic composite device and manufacturing method therefor
CN104423114A (en)*2013-09-052015-03-18华为技术有限公司All-solid-state electrochromic multiple device and preparation method thereof
CN104423114B (en)*2013-09-052018-03-06华为技术有限公司A kind of full-solid electrochromic multiple device and preparation method thereof
CN109154756B (en)*2016-07-072021-04-27株式会社Lg化学 Electrochromic device and method of making the same
CN109154756A (en)*2016-07-072019-01-04株式会社Lg化学Electrochromic device and method of manufacturing the same
CN111065758A (en)*2017-09-082020-04-24依视路国际公司Durable electrochromic devices including tungsten oxide films prepared in high ion bombardment and low pressure deposition environments and methods of making the same
CN111065758B (en)*2017-09-082022-06-21依视路国际公司Durable electrochromic devices including tungsten oxide films prepared in high ion bombardment and low pressure deposition environments and methods of making the same
CN111286710A (en)*2020-03-302020-06-16天津耀皮工程玻璃有限公司V for electrochromic-based glass2O5Preparation method of multi-layer ion storage layer
CN111286710B (en)*2020-03-302022-08-05天津耀皮工程玻璃有限公司V for electrochromic-based glass 2 O 5 Preparation method of multi-layer ion storage layer
CN113759624A (en)*2021-09-092021-12-07宁波伯宇科技有限公司 A process for manufacturing curved electrochromic lenses
CN113759624B (en)*2021-09-092024-11-05苏州伯宇科技有限公司 A process for manufacturing curved electrochromic lenses
CN116445872A (en)*2023-04-192023-07-18合肥工业大学 An amorphous molybdenum-doped tungsten oxide electrochromic material and its preparation method

Also Published As

Publication numberPublication date
TW201234920A (en)2012-08-16
US20120206789A1 (en)2012-08-16

Similar Documents

PublicationPublication DateTitle
CN102636931A (en)Electro-chromic layer, coated element and preparation method of coated element
US6787253B2 (en)Transparent electroconductive film and touch panel
WO1991002102A1 (en)Film based on silicon dioxide and production thereof
EP1437609A1 (en)Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film
JP2000040429A (en) Method for producing zinc oxide-based transparent conductive film
CN101921985A (en)High-transmissivity transparent conductive glass of touch screen and preparation method thereof
JP4067141B2 (en) Transparent conductive film, method for producing the same, and sputtering target
US20120207988A1 (en)Coated glass and method for making the same
CN105845196B (en)Manganese tin-oxide class transparent conductive oxide and using its multi-layer transparent conductive film with and preparation method thereof
CN108508671A (en)A kind of conductive reflective and its application in electrochromic device
TWI409540B (en)Method for manufacturing touch panel and apparatus for forming film
US20180247726A1 (en)Sputtered transparent conductive aluminum doped zinc oxide films
JP2003109434A (en)Transparent conductive film and touch panel
US11500257B2 (en)Inorganic solid-state electrochromic module containing inorganic transparent conductive film
JP4894103B2 (en) Transparent conductive film and touch panel
JP2004255706A (en) Transparent conductive laminated film
JP4793056B2 (en) Sputter deposition method of antireflection film
US20100186630A1 (en)Low-refractive-index film, method of depositing the same, and antireflection film
JP2008102273A (en)Electrochromic element and its manufacturing method
JP2004207383A (en)Electromagnetic shielding film
JPS63195149A (en) transparent conductive film
JP2007187993A (en)Electrochromic element and method for manufacturing the same
JP2007302909A (en) Thin film and electrode comprising the same
CN102453868A (en)Coated part and preparation method thereof
CN118028750B (en)Nano composite coating and preparation method and application thereof

Legal Events

DateCodeTitleDescription
C06Publication
PB01Publication
C10Entry into substantive examination
SE01Entry into force of request for substantive examination
C02Deemed withdrawal of patent application after publication (patent law 2001)
WD01Invention patent application deemed withdrawn after publication

Application publication date:20120815


[8]ページ先頭

©2009-2025 Movatter.jp