Embodiment
See also Fig. 1, the plated film spare of preferred embodiments of thepresent invention 10, it comprisesbase material 11 and firsttransparency conducting layer 12,electrochromic layer 13,ion conductor layer 14, ion storage 15 and secondtransparency conducting layer 16 that stack gradually.Said firsttransparency conducting layer 12 and secondtransparency conducting layer 16 are used for this platedfilm spare 10 is applied electric field, make it to take place variable color.Thision conductor layer 14 and ion storage 15 are used under the effect of extra electric field, for thiselectrochromic layer 13 electronics and ion being provided, and makeelectrochromic layer 13 redox reaction take place and variable color.
This firsttransparency conducting layer 12 is that (Indiumtin oxide, ITO) or aluminum zinc oxide transparent conductive film (AZO), it can adopt sputter or vapor deposition indium tin oxide or aluminum zinc oxide to form to indium tin oxide transparent conductive semiconductor film.
Thision conductor layer 14 is by LiTaO3Or LiNbO3Form through the collosol and gel mode.
This ion storage 15 is by V2O5, NiOxDeng forming through sputter or collosol and gel mode.
This secondtransparency conducting layer 16 is indium tin oxide transparent conductive semiconductor film or aluminum zinc oxide transparent conductive film glass, and it can adopt the mode of sputter or vapor deposition to form.
(wolframium oxide, the symbol of element are WO to the tungsten oxide that thiselectrochromic layer 13 mixes for A3), wherein A can be one or more in molybdenum (molybdnum, the symbol of element are Mo), niobium (niobium, the symbol of element are Nb), the titanium (titanium, the symbol of element are Ti); The A atomic percentage conc is 4~12% in thiselectrochromic layer 13, and the thickness of thiselectrochromic layer 13 can be 500~800nm, and its variable color voltage is 2.1~2.8V.Saidelectrochromic layer 13 can adopt the mode of magnetron sputtering to form.A behind the said doped with tungstic oxide, because the atomic radius of A radius and tungsten is close, the growing up of inhibition tungsten oxide crystal grain when forming electrochromic layer, grain refinement has increased the access way of ion.In addition, because the existence of A destroys part W-O-W key, under the effect of extra electric field, more help the turnover of ion, thereby reduced critical variable color voltage.This tungsten oxide applies electric field and removes in the process of electric field, has good reversibility, has improved the stability ofelectrochromic layer 13, thereby has improved its serviceable life.
The material of thisbase material 11 can be stainless steel, aluminium alloy, magnesium alloy, glass, pottery or plastics.
The preparation method of the plated film spare of preferred embodiments of thepresent invention 10 mainly comprises the steps:
Adopt sputter or vapor deposition indium tin oxide or aluminum zinc oxide onbase material 11, to form said firsttransparency conducting layer 12.
Adopt magnetron sputtering method on firsttransparency conducting layer 12, to form said electrochromic layer 13 (will combine accompanying drawing 2 to specify).Onelectrochromic layer 13, formion conductor layer 14 through the collosol and gel mode.
Form said ion storage 15 through sputter or collosol and gel mode.
Adopt sputter or vapor deposition indium tin oxide or aluminum zinc oxide onbase material 11, to form said firsttransparency conducting layer 12.
See also Fig. 2, thebase material 11,vacuum coating equipment 20 and thealloy target material 23 that have transparency conducting layer are provided, thisbase material 11 is processed by stainless steel, aluminium alloy, magnesium alloy, glass, pottery or plastics.Thisvacuum coating equipment 20 is provided with coating chamber 21.Saidalloy target material 23 is for being doped with the tungsten material of A, and wherein A can be one or more in molybdenum, niobium, the titanium; The atomic percentage conc of A is 4~12% in this electrochromic layer 13.Thisalloy target material 23 makes in the following manner: the configuration mixed powder, and to account for the total atom ratio of counting be 5-15% to A in this mixed powder, surplus is a tungsten; With above-mentioned mixed powder 1.0~20 * 105A base substrate is processed in hot pressing under the pressure of N, gets final product through 1700~2000 ℃ of sintering 1.5~3.0h.
Cleaning is to remove the spot onbase material 11 surfaces, and in the preferred embodiment of the present invention, thisbase material 11 is put into absolute ethyl alcohol and carried out ultrasonic cleaning, and scavenging period can be 5~10min.
Argon plasma is carried out on the surface of the base material after above-mentionedprocessing 11 clean, with the greasy dirt on furtherremoval base material 11 surfaces, and the adhesion that improvesbase material 11 surfaces and subsequentfilm.Base material 11 is put into thecoating chamber 21 of avacuum coating equipment 20, thiscoating chamber 21 is evacuated to 5.0~3.0 * 10-5Torr; Incoating chamber 21, feeding flow then is the argon gas (purity is 99.999%) of 200~400sccm (standard state ml/min); And apply-200~-300V be biased inbase material 11, argon plasma is carried out onbase material 11 surfaces cleans, scavenging period is 10~20min.
Adopt magnetron sputtering method at the saidelectrochromic layer 13 of deposition on the transparent conductive film of thebase material 11 after the argon plasma cleaning.
The power of saidalloy target material 23 can be 2.5~3.5kw; With oxygen is reacting gas, and the flow of oxygen is 50~75sccm, is working gas with the argon gas; The flow of argon gas is 300~400sccm; The bias voltage thatbase material 11 is applied is-100~-200V, heating the temperature that saidcoating chamber 21 makesbase material 11 is 300~400, the plated film time can be 30~60min.The thickness of saidelectrochromic layer 13 can be 500~800nm.
When thiselectrochromic layer 13 was applied the voltage of 2.1~2.8V, Li+ ion in the ionconductive layer 14 and electronics got in thiselectrochromic layer 13, and part tungsten is reduced into+5 valencys from+6 valencys, and thiselectrochromic layer 13 is by the colourless blueness that becomes.When removing extra electric field, said ion and electronics disappear, and tungsten is oxidized to+6 valencys from+5 valencys, and thiselectrochromic layer 13 is become colorless by blueness.
Come the preparation ofelectrochromic layer 13 of the present invention is specified through embodiment below.
Embodiment 1
The employedvacuum coating equipment 20 of present embodiment is the medium frequency magnetron sputtering coating machine, and company limited produces for south, Shenzhen innovation vacuum technique, and model is SM-1100H.
The material of the employedbase material 11 of present embodiment is a stainless steel; A is molybdenum and titanium in the saidalloy target material 23, and wherein the atomic percentage conc of molybdenum among the A and titanium is molybdenum 5% and titanium 5%, the tungsten powder body of surplus, and thisalloy target material 23 is processed through 1800 sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 10min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 60sccm, and the flow of argon gas is 300sccm, and bias voltage is-100V, and coating temperature is 250, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 1 are 600~700nm, and mean value is 640nm.When between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying the voltage of 2.4~2.6V, thiselectrochromic layer 13 is by the colourless blueness that becomes.
Embodiment 2
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is an aluminium alloy; A is molybdenum, niobium and titanium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 2%, niobium 1% and titanium 3%, the tungsten powder body of surplus, and thisalloy target material 23 is processed through 1850 sintering 1.5h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 10min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3.5kw, and the flow of oxygen is 50sccm, and the flow of argon gas is 300sccm, and bias voltage is-150V, and coating temperature is 200 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 2 are 650~800nm, and mean value is 655nm, and thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.5V voltage.
Embodiment 3
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is molybdenum, niobium and titanium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 5%, niobium 2%, titanium 6%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1900 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 20min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 250 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 3 are 550~650nm, and average thickness is 590nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.1~2.4V voltage.
Embodiment 4
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a stainless steel; A is molybdenum, niobium and titanium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 3%, niobium 3% and titanium 3%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1950 ℃ of sintering 1.5h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 10min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4.5kw, and the flow of oxygen is 60sccm, and the flow of argon gas is 300sccm, and bias voltage is-150V, and coating temperature is 200 ℃, and the plated film time is 45min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 3 are 500~650nm, and average thickness is 590nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.5V voltage.
Embodiment 5
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is molybdenum and niobium in the saidalloy target material 23, and each atomic percentage conc of A is molybdenum 5% and niobium 3%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1950 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 5 are 500~600nm, and average thickness is 565nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.5~2.8V voltage.
Embodiment 6
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a molybdenum in the saidalloy target material 23, and each atomic percentage conc of A is a molybdenum 15%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1900 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 5 are 500~600nm, and average thickness is 570nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.6V voltage.
Embodiment 7
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a niobium in the saidalloy target material 23, and each atomic percentage conc of A is a niobium 5%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1800 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3.5kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 7 are 500~600nm, and average thickness is 540nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.4~2.7V voltage.
Embodiment 8
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a niobium in the saidalloy target material 23, and each atomic percentage conc of A is a niobium 15%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1950 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 4.5kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 8 are 500~600nm, and average thickness is 555nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.3~2.5V voltage.
Embodiment 9
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a titanium in the saidalloy target material 23, and each atomic percentage conc of A is a titanium 5%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1700 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made by embodiment 9 are 500~600nm, and average thickness is 530nm.Thiselectrochromic layer 13 is by the colourless blueness that becomes when between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, applying 2.5~2.8V voltage.
Embodiment 10
Identical among the employedvacuum coating equipment 20 of present embodiment and the embodiment 1.
The material of the employedbase material 11 of present embodiment is a glass; A is a titanium in the saidalloy target material 23, and each atomic percentage conc of A is a titanium 15%, and surplus is a tungsten, and thisalloy target material 23 is processed through 1800 ℃ of sintering 2h through a base substrate is processed in mixed powder hot pressing.
Plasma clean: argon flow amount is 400sccm, and the bias voltage ofbase material 11 is-300V that the plasma clean time is 60min.
Sputter electrochromic layer 13: the power ofalloy target material 23 is 3.5kw, and the flow of oxygen is 65sccm, and the flow of argon gas is 300sccm, and bias voltage is-120V, and coating temperature is 150 ℃, and the plated film time is 60min.
Electrochromic layer 13 thickness of the plated film spare 10 that is made byembodiment 10 are 500~600nm, and average thickness is 520nm.Between firsttransparency conducting layer 12 and secondtransparency conducting layer 16, apply 2.3~2.7V, thiselectrochromic layer 13 is by the colourless blueness that becomes during making alive.
Be appreciated that said firsttransparency conducting layer 12 can omit whenbase material 11 is processed by conductive material.
Preferred embodiments plated film spare 10 of the present invention is at the surfacedeposition electrochromic layer 13 ofbase material 11, and thisalloy target material 23 doping A have reduced the variable color voltage ofelectrochromic layer 13, make it have excellent more discoloration; And thiselectrochromic layer 13 has good reversibility, can improve the serviceable life of plated film spare 10 effectively.
In addition, those skilled in the art also can make various modifications, interpolation and the replacement on other form and the details in claim of the present invention scope of disclosure and spirit.Certainly, these all should be included within the present invention's scope required for protection according to the variations such as various modifications, interpolation and replacement that the present invention's spirit is made.