Imageing sensorTechnical field
The present invention relates to imageing sensor, particularly to a kind of three-primary-color image information gathering rate of improvingImageing sensor.
Background technology
Imageing sensor is semiconductor device picture signal being converted into the signal of telecommunication, and imageing sensor is divided intoCharge-coupled image sensor (Charge-coupled Device, CCD) sensor and cmos image sensor(CMOS Imaging Seneor, CIS).Existing image processing techniques, generally uses colored filter to makeObtain described imageing sensor and can collect three kinds of trichromatic image informations of red, green, blue, then profit respectivelyOriginal image is restored by interpolation arithmetic by described trichromatic image information.
Notification number is that the Chinese patent application document of CN 100334886 C discloses a kind of Bayer color optical filteringPattern (Bayer color filter pattern).Refer to Fig. 1, a kind of for prior art uses Bayer colorThe structural representation of the cmos image sensor of color optical filtering pattern.The coloured silk of described cmos image sensorColor filter unit uses the arrangement of Bayer pattern, and wherein, the colored light-filtering units of odd-numbered line is by red (Red)Filter unit and green (Green) filter unit are spaced formation, the colored light-filtering units of even number line byGreen (Green) filter unit and blue (Blue) filter unit are spaced formation.Adjacent rows withFour colored light-filtering units that adjacent two row intersect constitute the pixel cell of a cmos image sensor10, the most each pixel cell 10 includes that two green filter unit, a blue filter unit and one are redColor filter unit, said two green filter unit diagonal is distributed.Described green filter unit can filterThe light of other colors in addition to green glow so that be only positioned at the imageing sensor below described green filter unitThe image information of green can be recorded；Described red filter unit can filter the light of other colors in addition to HONGGUANG,Make to be positioned at the imageing sensor below described red filter unit and only can record the image information of redness, instituteState blue filter unit and can filter the light of other colors in addition to blue light so that be positioned at described blue filter listImageing sensor below unit only can record the image information of blueness.In FIG, described green filter listUnit is the filter unit indicating G, and described blue filter unit is the filter unit indicating B, described rednessFilter unit is the filter unit indicating R.
But, owing to described green filter unit only accounts for the 50% of the whole pixel cell gross area, described redColor filter unit only accounts for the 25% of the whole pixel cell gross area, and described blue filter unit only accounts for whole pictureThe 25% of the element unit gross area, described green filter unit can only process the green of the 50% of whole pixel cellLight, described red filter unit can only process the HONGGUANG of the 25% of whole pixel cell, described blue filterUnit can only process the blue light of the 25% of whole pixel cell.Therefore, in order to be able to reappear original image, needThe three-primary-color image information collected is recombined image by interpolation algorithm to be utilized.But due to blue light andThe image information of HONGGUANG can only collect the 25% of all images information, and the image information of green glow can only gatherTo the 50% of all images information, described three-primary-color image information gathering rate is relatively low, causes the image of collectionInformation is fewer, and the image utilizing interpolation algorithm to reduce there will be bigger distortion compared with original image.
Summary of the invention
The problem that the present invention solves is to provide a kind of image that can improve primaries image information collecting rate and passesSensor, by beam condensing unit and light-dividing device so that more light can enter the pixel of imageing sensorIn unit, add the image information that imageing sensor gathers, reduce the distortion rate going back original image.
For solving the problems referred to above, one imageing sensor of the present invention, including:
Substrate；
Described photosensor regions has and is sequentially located at collinear first photoelectric sensor, the second photoelectricitySensor, the 3rd photoelectric sensor；
Being positioned at the light-dividing device on surface, described photosensor regions, incident illumination is carried out point by described light-dividing deviceLight, and the HONGGUANG formed after light splitting, green glow, three kinds of light of blue light are incided corresponding photoelectric transducer sheetFace；
Being positioned at the beam condensing unit above described light-dividing device, described beam condensing unit is by cross section and described photoelectricityThe ambient light that sensor regions size is identical pools cross section and the identical incidence of a photoelectric sensor sizeLight is also irradiated to described light-dividing device surface.
Optionally, described photoelectric sensor is photodiode.
Optionally, described three photoelectric sensors gather the image information of HONGGUANG, green glow, blue light respectively.
Optionally, described light-dividing device is prism.
Optionally, the width of described prism is more than the width of described photoelectric sensor, and is less than or equal to instituteState the width of photosensor regions.
Optionally, described light-dividing device includes being positioned at the first dichroic mirror above described second photoelectric sensorWith the second dichroic mirror being positioned at above the first dichroic mirror, it is positioned at first above described first photoelectric sensorIlluminator, is positioned at the second illuminator above described 3rd photoelectric sensor, described first illuminator andOne dichroic mirror is parallel, and described second illuminator and the second dichroic mirror are parallel.
Optionally, described first dichroic mirror, the second dichroic mirror be respectively red dichroic mirrors, green dichroic mirror,Two kinds therein of blue dichroic mirror.
Optionally, described first illuminator and the dichroic mirror that the first spectroscope is same color, described secondIlluminator and the second spectroscope are also the dichroic mirror of same color.
Optionally, described beam condensing unit includes the first lenticule being positioned at above light-dividing device and is positioned at describedThe second lenticule above first lenticule.
Optionally, described first lenticule is concavees lens, and described second lenticule is convex lens.
Optionally, between described beam condensing unit and light-dividing device, between light-dividing device and photosensor regionsIt is also formed with light transmission medium layer.
Compared with prior art, the invention have the advantages that
The imageing sensor of the embodiment of the present invention has light-dividing device and is positioned at the poly-of described light-dividing device surfaceElectro-optical device, utilizes described beam condensing unit, the ambient light identical with imageing sensor district area is pooled withThe incident illumination that image area sensor is identical, and utilize light-dividing device that described incident illumination is divided into HONGGUANG, greenLight, three kinds of light of blue light also incide corresponding photoelectric sensor surface, and described three photoelectric sensors canGather all image informations of respective color so that the distortion rate of the follow-up image recombined reduces.
Accompanying drawing explanation
Fig. 1 is the knot of a kind of cmos image sensor using Bayer color optical filtering pattern of prior artStructure schematic diagram；
Fig. 2 is the structural representation of embodiment of the present invention image sensor array formula arrangement；
Fig. 3 is the cross-sectional view of imageing sensor first embodiment of the present invention；
Fig. 4 is the cross-sectional view of imageing sensor the second embodiment of the present invention.
Detailed description of the invention
Due to prior art imageing sensor can only the primaries image information of collecting part, utilize instituteDistortion, inventor's warp is there is in the image of the primaries image information reduction stating part compared with original imageCross and researched and proposed a kind of imageing sensor, including: substrate；It is positioned at the photoelectric sensor of described substrateDistrict, described photosensor regions includes being sequentially located at collinear first photoelectric sensor, the second photoelectricitySensor, the 3rd photoelectric sensor；It is positioned at the light-dividing device above described photosensor regions, described pointIncident illumination is divided into HONGGUANG, green glow, three kinds of light of blue light and incides the photoelectric transducer sheet of correspondence by electro-optical deviceFace；Being positioned at the beam condensing unit above described light-dividing device, described beam condensing unit is by cross section and described photoelectricityThe ambient light that sensor regions size is identical pools the incidence that cross section is identical with described photoelectric sensor sizeLight is also irradiated to described light-dividing device surface.Owing to described imageing sensor energy will be big with described pixel cellLittle identical ambient light is divided into HONGGUANG by beam condensing unit and light-dividing device, green glow, three kinds of light of blue light are incorporated toBeing mapped to the photoelectric sensor surface of correspondence, described photoelectric sensor can gather all images letter of respective colorBreath so that the distortion rate of the follow-up image recombined reduces.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent fromThe detailed description of the invention of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but thisBright other can also be used to be different from alternate manner described here implement, therefore the present invention is not by followingThe restriction of disclosed specific embodiment.
Embodiment I
Refer to Fig. 2, for the structural representation of embodiment of the present invention image sensor array formula arrangement.This realityExecuting in example, described imageing sensor is ccd image sensor, and in other embodiments, described image passesSensor can also be cmos image sensor.Described imageing sensor includes multiple pictures that array is arrangedElement unit 100, each pixel cell 100 has three photoelectric sensors, be the first photoelectric sensor 151,Second photoelectric sensor the 152, the 3rd photoelectric sensor 153.Be positioned at same string same pixel cellOne photoelectric sensor the 151, second photoelectric sensor the 152, the 3rd photoelectric sensor 153 is positioned at same straight lineOn.In the present embodiment, described first photoelectric sensor 151 is used for gathering HONGGUANG image information, describedSecond photoelectric sensor 152 is used for gathering green glow image information, and described 3rd photoelectric sensor 153 is used forGather blue light images information.In other embodiments, described photoelectric sensor can be according to different light splitting dressesPut the corresponding image information gathering different colours light.
In the present embodiment, described adjacent pixel cell aligns arrangement up and down, in other embodimentsIn, the pixel cell of adjacent column is staggered.
In fig. 2, the first photoelectric sensor 151 of described collection HONGGUANG image information r identifies, describedThe second photoelectric sensor 152 g gathering green glow image information identifies, described collection blue light images informationThe 3rd photoelectric sensor 153 identify with b.
Refer to Fig. 3, for the cross-sectional view of imageing sensor first embodiment of the present invention.Described figureAs sensor generally includes multiple pixel cells of array arrangement, in order to make accompanying drawing succinct, clear, Fig. 3In only as a example by a pixel cell.Other pixel cells of imageing sensor are identical with this.For otherPixel cell, can replace accordingly.
Fig. 3 is the cross-sectional view of the AA ' line shown in Fig. 2.As it is shown on figure 3, described pixel listUnit includes: substrate 110；It is positioned at the photosensor regions 150 of described substrate 110, described photoelectric sensingDevice district 150 have be sequentially located at collinear first photoelectric sensor the 151, second photoelectric sensor 152,3rd photoelectric sensor 153；Being positioned at the prism 210 above described pixel cell, described prism 210 will enterPenetrate light and carry out light splitting, and the HONGGUANG formed after light splitting, green glow, three kinds of light of blue light are incided corresponding lightElectric transducer surface；Being positioned at the beam condensing unit 300 above described prism 210, described beam condensing unit 300 willThe ambient light that cross section is identical with described photosensor regions 150 size pools cross section and a photoelectricityIncident illumination that sensor size is identical is also irradiated to light-dividing device surface.
Described substrate 110 can be monocrystalline substrate, germanium silicon substrate or silicon-on-insulator (Silicon onInsulator, SOI) substrate.In the present embodiment, described substrate 110 is monocrystalline substrate.
Described photoelectric sensor is photodiode, including the first doped region being formed in described substrate (notIllustrate), be positioned at the second doped region (not shown) on the first doped region surface, by changing doping process,Make different photoelectric sensors can gather the photon of different wave length and produce electric current, and described electric currentIntensity corresponding with the intensity of illumination, described pixel can be irradiated to perception by described photodiodeThe light intensity of cell surface corresponding color light.Described photoelectric sensor also includes controlling switch (not shown), instituteState photodiode under the control controlling switch, the electric current collected can be converted into output signal defeatedGo out in external process devices, it is thus achieved that the corresponding light image information in described photoelectric sensor position.?In other embodiments, described photoelectric sensor can be phototriode.
Isolation structure 120 it is formed with, with being electrically isolated different photoelectric sensings between different photoelectric sensorsDevice.In the present embodiment, described isolation structure 120 is fleet plough groove isolation structure.
Described first photoelectric sensor the 151, second photoelectric sensor the 152, the 3rd photoelectric sensor 153In described substrate 110 and be arranged in order, described first photoelectric sensor 151 can only gather the light of HONGGUANGSon, described second photoelectric sensor 152 can only gather the photon of green glow, described 3rd photoelectric sensor 153The photon of blue light can only be gathered.When ambient light forms polychromatic light, ripple after the light splitting of described prism 210Long scope at the red light irradiation of 625nm～740nm to described first photoelectric sensor 151 surface so that instituteState the first photoelectric sensor 151 and produce the electric current corresponding with HONGGUANG light intensity, by measuring described current intensityThe image information of the HONGGUANG being radiated at described pixel cell surface can be obtained；Wave-length coverage existsThe green glow of 500nm～565nm is irradiated to described second photoelectric sensor 152 surface so that described second lightElectric transducer 152 produces the electric current corresponding with green glow light intensity, can obtain by measuring described current intensityIt is radiated at the image information of the green glow on described pixel cell surface；Wave-length coverage is the indigo plant of 440nm～485nmLight is irradiated to described 3rd photoelectric sensor 153 surface so that described 3rd photoelectric sensor 153 producesThe electric current corresponding with blue light light intensity, can be obtained by the described current intensity of measurement and be radiated at described pixel listThe image information of the blue light on unit surface.In subsequent step, utilize three kinds of primaries of red, green, blueImage information, can synthesize the image being irradiated to described image sensor surface by computing.
The first light transmission medium layer 200 it is formed with between described photosensor regions 150 and prism 210,The second light transmission medium layer 220 it is formed with between described prism 210 and beam condensing unit 300.Described by adjustingThe height of the first light transmission medium layer 200 so that it is right that the three primary colors luminous energy after prism 210 light splitting is irradiated toThe photoelectric sensor surface answered.Owing to described photoelectric sensor needs the intensity of perception light, in order to improve figureAs the sensitivity of sensor, it is preferred that need to select the dielectric material that light transmittance is higher as light transmission medium layer,In the present embodiment, the material of described light transmission medium layer is silicon dioxide, but the present invention is not restricted to this.
As it is shown on figure 3, described photosensor regions 150 is formed above prism 210, described prism 210It is used for described incident illumination carrying out light splitting and HONGGUANG, green glow, three kinds of light of blue light being irradiated to corresponding photoelectricitySensor surface.In the present embodiment, described prism is prism, and the drift angle of described prism is positioned at instituteStating above the first photoelectric sensor, the width of described prism is more than the width of described photoelectric sensor and littleIn the width equal to described photosensor regions.In the embodiment of the present invention, described width is that device is at AA 'Device width from left to right in width on direction, i.e. Fig. 3.According to described prism and be positioned at describedThe material of the transparent dielectric layer of the upper and lower both sides of prism, regulates the angle of described prism drift angle so that enterPenetrate light and can be divided into polychromatic light by after described prism, and the HONGGUANG in described polychromatic light is just irradiatedTo described first photoelectric sensor 151 surface, the green glow in described polychromatic light is just irradiated to described secondPhotoelectric sensor 152 surface, the blue light in described polychromatic light is just irradiated to described 3rd photoelectric sensor153 surfaces.In other embodiments, the drift angle of described prism is positioned at above described 3rd photoelectric sensor,HONGGUANG after prism light splitting is just irradiated to described 3rd photoelectric sensor 153 surface, described manyGreen glow in coloured light is just irradiated to described second photoelectric sensor 152 surface, the indigo plant in described polychromatic lightLight is just irradiated to described first photoelectric sensor 151 surface.
In the present embodiment, the material of described prism 210 is optical resin material, in other embodimentsIn, the material of described prism is the silicon oxide of doping.
As it is shown on figure 3, described prism 210 is formed above beam condensing unit 300, described beam condensing unit 300The ambient light that cross section is identical with described photosensor regions 150 size is pooled cross section and a lightIncident illumination that electric transducer size is identical is also irradiated to prism 210 upper surface.In the present embodiment, describedBeam condensing unit 300 includes the first lenticule 310 being positioned at above described prism 210 and is positioned at described firstThe second lenticule 320 above lenticule 310.Described first lenticule 310 is concavees lens, described secondLenticule 320 is convex lens.The primary optical axis of described first lenticule 310 and the second lenticule 320 is positioned atOn same straight line, between described first lenticule 310 and the second lenticule 320, it is also formed with light transmission mediumLayer (sign).The shape of described second lenticule 320, position and described photosensor regions 150Shape, position are corresponding so that incide the cross section of ambient light in described imageing sensor and described lightElectric transducer district size is identical.When the primary optical axis of parallel and described second lenticule 320 of ambient light is irradiated toDescribed second lenticule 320 surface, owing to convex lens has convergence effect to light, ambient light passes through instituteCan reflect after stating the second lenticule 320 so that be finally irradiated to the light on the first lenticule 310 surfaceCross section diminish；Owing to concavees lens have a diffusion to light, described reflect after light pass throughDescribed first lenticule 310 occurs again to reflect so that the light sent from the first lenticule 310 and instituteThe primary optical axis stating the first lenticule 310 is parallel, and is irradiated to the surface of described prism 210, described fromCross section and a photoelectric sensor size of the light that one lenticule 310 sends are identical.
The shape of the shape of described second lenticule 320 and position and described photosensor regions 150 and positionPutting correspondence, the extraneous luminous energy above described pixel cell is all irradiated to by described second lenticule 320Photoelectric sensor surface, and utilize described beam condensing unit by big with described photosensor regions 150 for cross sectionLittle identical ambient light pools cross section and the identical incident illumination of a photoelectric sensor size, described relativelySo that the light full illumination of corresponding color is to described photoelectric sensing after the incident illumination light splitting of little cross-sectional areaDevice surface.Owing to described photoelectric sensor can collect the whole external worlds being irradiated to above described pixel cellThe image information of light, and photoelectric sensor described in prior art can only collect partial illumination to pixel listThe image information of the ambient light above unit, utilization is irradiated to the whole of the ambient light above described pixel cellImage information makes distortion rate between the image finally recombined and original image be greatly reduced.
The imageing sensor of the embodiment of the present invention can be emitted onto the ambient light on described pixel cell surface to be passed throughBeam condensing unit and prism carry out light splitting and HONGGUANG, green glow, three kinds of light of blue light are incided corresponding photoelectric transferSensor surfaces, described three photoelectric sensors can gather all image informations of respective color, and existingIn technology, imageing sensor can only collect the image information of partial response color, due to described three photoelectricitySensor acquisition is to all image informations of respective color so that the distortion rate of the follow-up image recombinedReduce.
Embodiment II
The structural representation of the pixel unit array formula arrangement of the imageing sensor of second embodiment of the invention pleaseWith reference to the Fig. 2 in first embodiment, it is not described in detail in this.
Refer to Fig. 4, for the schematic diagram of imageing sensor the second embodiment of the present invention.Described imageing sensorGenerally include multiple pixel cells of array arrangement, in order to make accompanying drawing succinct, clear, in accompanying drawing 4 onlyAs a example by a pixel cell.Other pixel cells of imageing sensor are identical with this.For other pixelsUnit, can replace accordingly.
As shown in Figure 4, pixel cell includes: substrate 500；It is positioned at the photoelectric sensing of described substrate 500Device district 550, described pixel cell 550 include being sequentially located at collinear first photoelectric sensor 551,Second photoelectric sensor the 552, the 3rd photoelectric sensor 553；It is positioned on described second photoelectric sensor 552First dichroic mirror 610 of side and be positioned at the second dichroic mirror 620 above the first dichroic mirror 610, is positioned at describedThe first illuminator 630 above first photoelectric sensor 551, is positioned on described 3rd photoelectric sensor 553Second illuminator 640 of side, described first illuminator 630 is parallel with the first dichroic mirror 610, and described secondIlluminator 640 is parallel with the second dichroic mirror 620；It is positioned at the optically focused dress above described dichroic mirror and illuminatorPutting 700, described beam condensing unit 700 is by the external world identical with described photosensor regions 550 size for cross sectionLight pools cross section and the identical incident illumination of photoelectric sensor size and is irradiated to the second dichroic mirror620 upper surfaces.
The structure that the present embodiment is identical with embodiment illustrated in fig. 3 repeats no more, shown in the present embodiment and Fig. 3The difference of embodiment is:
Light-dividing device in the embodiment of the present invention is transparent dielectric layer 600, shape in described transparent dielectric layer 600Become to have two dichroic mirrors and two illuminators.Said two dichroic mirror includes being positioned at described second photoelectric sensingThe first dichroic mirror 610 above device 552 and be positioned at the second dichroic mirror above described first dichroic mirror 610620, it is positioned at the first illuminator 630 above described first photoelectric sensor 551, is positioned at described 3rd lightThe second illuminator 640 above electric transducer 553, described first illuminator 630 and the first dichroic mirror 610Two planes are parallel, and 620 liang of planes of described second illuminator 640 and the second dichroic mirror are parallel.Real at otherExecuting in example, described first illuminator 630 is parallel with the second dichroic mirror 620 plane, described second illuminator640 is parallel with 610 liang of planes of the first dichroic mirror.
In the present embodiment, described first dichroic mirror 610 is 45 ° with the angle of the plane of substrate 500, instituteThe angle stating the second dichroic mirror 620 and the plane of substrate 500 is 45 °, and described first dichroic mirror 610 withSecond 620 liang of dichroic mirror plane is vertical.In other embodiments, described first dichroic mirror 610 and substrateThe angle between angle and described second dichroic mirror 620 and substrate 500 between 500 can be more than 0 °,Less than 90 °, it is preferred that the angular range between described first dichroic mirror 610 and substrate 500 is 30 °～60 °,Angular range between described second dichroic mirror 620 and substrate 500 is 30 °～60 °.
In the present embodiment, described second dichroic mirror 620 is red dichroic mirrors, and red light can be made to occurReflection, the light of other colors in addition to HONGGUANG can pass through described second dichroic mirror 620, described and theSecond illuminator 640 of two dichroic mirror 620 sustained heights is also red dichroic mirrors, is used for reflecting HONGGUANG,Described second dichroic mirror 620 and the second illuminator 640 are positioned at sustained height, can concurrently form, to saveProcessing step during making.Described first dichroic mirror 610 is blue dichroic mirror, and blue light can be made to occurReflection, the light of other colors in addition to blue light can pass through described first dichroic mirror 610, described andFirst illuminator 630 of the first dichroic mirror 610 sustained height is also blue dichroic mirror, is used for reflecting blue light,Described first dichroic mirror 610 and the first illuminator 630 are positioned at sustained height, can concurrently form, to saveProcessing step during making.In other embodiments, described first illuminator 630 and the second illuminator 640For common illuminator.Owing to described dichroic mirror and illuminator are the known technology of those skilled in the art,The structure of described dichroic mirror and illuminator is not described in detail at this.
In the present embodiment, described ambient light is mapped to by the incident illumination pooled after beam condensing unit 700Described second dichroic mirror 620 surface, and the cross-sectional area of described incident illumination and described photoelectric sensor sizeIdentical.Owing to described incident illumination is vertical with substrate plane, described second dichroic mirror 620 plane and substrate 500The angle of plane is 45 ° so that the HONGGUANG in described incident illumination reflects, and the HONGGUANG of described reflection is passed throughIt is positioned at the reflection once again of the second illuminator 640 of sustained height, is irradiated to the 3rd photoelectric sensor 553Surface；It is irradiated to described first dichroic mirror 610 surface by the transmitted ray of the second dichroic mirror 620, byVertical with substrate 500 plane in the described transmitted ray passing through the second dichroic mirror 620, described first color separationMirror 610 plane is 45 ° with the angle of substrate 500 plane so that the blue light in described incident illumination reflects,The blue light of described reflection, through being positioned at the reflection once again of the first illuminator 630 of sustained height, is irradiated to theThe surface of one photoelectric sensor 551；It is irradiated to described by the transmitted ray of described first dichroic mirror 610Second photoelectric sensor 552 surface.Described first photoelectric sensor 551 gathers the photon of blue light and producesRaw electric current, it is thus achieved that be radiated at the image information of the blue light of described pixel cell；Described second photoelectric sensor552 photons gathering green light also produce electric current, it is thus achieved that be radiated at the image letter of the green glow of described pixel cellBreath；Described 3rd photoelectric sensor 553 gathers the photon of red light and produces electric current, it is thus achieved that be radiated at instituteState the image information of the HONGGUANG of pixel cell.In other embodiments, the first dichroic mirror and second point are changedThe type of color mirror, changes the type of described photoelectric sensor simultaneously.It is such as red when described first dichroic mirrorColor spectroscope, described second dichroic mirror is green spectroscope, and the most described first photoelectric sensor gathers HONGGUANGImage information, described second photoelectric sensor for gathering the image information of blue light, described 3rd photoelectricitySensor is used for gathering the image information of blue light.
Described beam condensing unit is utilized ambient light identical with described photosensor regions size for cross section to be convergedBecome cross section and the identical incident illumination of a photoelectric sensor size, the incident illumination of described small cross sectionalSo that the light full illumination of corresponding color is to described photoelectric sensor surface after dichroic mirror light splitting.It is irradiated to the image of the whole ambient light above described pixel cell owing to described photoelectric sensor can collectInformation, and photoelectric sensor described in prior art can only collect partial illumination to above pixel cellThe image information of ambient light, utilizes all images information being irradiated to the ambient light above described pixel cellDistortion rate between the image finally recombined and original image is greatly reduced.
The imageing sensor of the embodiment of the present invention can be emitted onto the ambient light on described pixel cell surface to be passed throughBeam condensing unit, dichroic mirror, illuminator are divided into HONGGUANG, green glow, three kinds of light of blue light and incide the light of correspondenceElectric transducer surface, described three photoelectric sensors can gather all image informations of respective color, andIn prior art, imageing sensor can only collect the image information of partial response color, due to described threePhotoelectric sensor collects all image informations of respective color so that the mistake of the follow-up image recombinedSincere reduction.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, appointsWhat those skilled in the art without departing from the spirit and scope of the present invention, may be by the disclosure aboveTechnical solution of the present invention is made possible variation and amendment by method and technology contents, therefore, every does not takes offFrom the content of technical solution of the present invention, it is any that above example is made by the technical spirit of the foundation present inventionSimple modification, equivalent variations and modification, belong to the protection domain of technical solution of the present invention.