CN102478765A - A method of preparing a microstructure - Google Patents
A method of preparing a microstructureDownload PDFInfo
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- CN102478765A CN102478765ACN 201110120117CN201110120117ACN102478765ACN 102478765 ACN102478765 ACN 102478765ACN 201110120117CN201110120117CN 201110120117CN 201110120117 ACN201110120117 ACN 201110120117ACN 102478765 ACN102478765 ACN 102478765A
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Abstract
Translated fromChinese
Description
Translated fromChinese【技术领域】【Technical field】
本发明涉及微结构制备工艺技术领域，尤其涉及一种制备微结构的方法。The invention relates to the technical field of microstructure preparation technology, in particular to a method for preparing microstructures.
【背景技术】【Background technique】
目前，制备微结构的工艺中，公认的廉价方法是光刻技术，但是光刻技术在制备大面积的微结构图形受到两方面的限制：一方面光刻机普遍是为了半导体工艺而设计的，目前最好的生产线是12英寸生产线，如果基地材料大于12英寸，就必须用到拼接技术，很难一次性实现大面积光刻；另一方面，光刻机大多数是步进式的，也就是说只能在基地上重复性的曝光相同的图形，如果需要在基板上实现不同形状、不同密度、不同尺寸的图形，光刻很难实现。At present, in the process of preparing microstructures, the recognized cheap method is photolithography technology, but photolithography technology is limited by two aspects in the preparation of large-area microstructure patterns: on the one hand, photolithography machines are generally designed for semiconductor processes, At present, the best production line is a 12-inch production line. If the base material is larger than 12 inches, splicing technology must be used, and it is difficult to achieve large-area lithography at one time; That is to say, the same pattern can only be repeatedly exposed on the base. If it is necessary to realize patterns of different shapes, densities, and sizes on the substrate, photolithography is difficult to achieve.
现有技术中，压印技术作为一种新的加工工艺，在制造纳米量级的结构时，将母模或模版压入保形材料中，材料将按照模版的图形发生变形，再通过紫外曝光或者热处理的方法，就可以将模版图形复制到这种材料中。In the existing technology, imprinting technology is a new processing technology. When manufacturing nanoscale structures, the master mold or template is pressed into the conformal material, and the material will be deformed according to the pattern of the template, and then exposed by ultraviolet light. Or heat treatment, you can copy the template graphics into this material.
在对现有技术的研究实践过程中，发明人发现：现有技术中的压印技术主要应用于小面积制作纳米量级的图形，但是在大面积制备微米量级的结构方面还没有相关的技术。During the research and practice of the prior art, the inventors found that the imprinting technology in the prior art is mainly used in the fabrication of nanometer-scale graphics in a small area, but there is no relevant method for preparing micron-scale structures in a large area. technology.
【发明内容】【Content of invention】
本发明所要解决的技术问题是提供一种制备微结构的方法，能够大面积制备所需要的微米结构。The technical problem to be solved by the present invention is to provide a method for preparing microstructures, which can prepare required microstructures in a large area.
为解决上述技术问题，本发明实施例提供了一种制备微结构的方法，该方法包括：In order to solve the above technical problems, an embodiment of the present invention provides a method for preparing a microstructure, the method comprising:
在衬底上形成一层所需金属材料；forming a layer of desired metal material on the substrate;
在所述金属材料上涂覆一层抗蚀剂；coating a layer of resist on the metal material;
将预置的微结构图形模版与所述抗蚀剂进行压合；Pressing the preset microstructure graphic template with the resist;
在所述抗蚀剂上形成微结构图形后，将所述微结构图形模版与所述抗蚀剂分开；After forming the microstructure pattern on the resist, separating the microstructure pattern template from the resist;
将所述抗蚀剂上的微结构图形转移到所述金属材料上；transferring the microstructure pattern on the resist to the metal material;
去除所述金属材料上的所述抗蚀剂。removing the resist on the metal material.
本发明实施例提供的技术方案，通过在金属材料上涂敷一层抗蚀剂，将微结构图形模版上的图形转移到抗蚀剂上，然后再将抗蚀剂上的微结构图形转移到金属材料上，从而有效的保护了金属材料，并且根据需要，能够大面积制备微米量级的结构，成本低、操作简单，可产业化。In the technical scheme provided by the embodiment of the present invention, by coating a layer of resist on the metal material, the pattern on the microstructure pattern template is transferred to the resist, and then the microstructure pattern on the resist is transferred to On the metal material, the metal material is effectively protected, and a micron-scale structure can be prepared in a large area according to the need, with low cost, simple operation, and industrialization.
【附图说明】【Description of drawings】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.
图1为本发明实施例提供的一种制备微结构过程的状态图；Fig. 1 is a state diagram of a process of preparing a microstructure provided by an embodiment of the present invention;
图2为本发明实施例一提供的一种制备微结构的方法流程图；Fig. 2 is a flow chart of a method for preparing a microstructure provided by Embodiment 1 of the present invention;
图3为本发明实施例二提供的一种制备微结构的方法流程图；Fig. 3 is a flow chart of a method for preparing a microstructure provided by Embodiment 2 of the present invention;
图4为本发明实施例三提供的一种制备微结构的方法流程图；FIG. 4 is a flow chart of a method for preparing a microstructure provided by Embodiment 3 of the present invention;
图5为本发明实施例四提供的一种制备微结构的方法流程图；Fig. 5 is a flow chart of a method for preparing a microstructure provided by Embodiment 4 of the present invention;
图6为本发明实施例五提供的一种制备微结构的方法流程图。FIG. 6 is a flow chart of a method for preparing a microstructure provided by Embodiment 5 of the present invention.
【具体实施方式】【Detailed ways】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
首先，为了本领域技术人员更容易理解本发明的技术方案，下面结合图1对本发明的技术方案进行总体介绍：First of all, in order for those skilled in the art to understand the technical solution of the present invention more easily, the technical solution of the present invention is generally introduced below in conjunction with Fig. 1:
图1为本发明实施例提供的一种制备微结构过程的状态图，其中：11为微结构模版剖视图；12为在衬底上形成一层所需金属材料后所示的状态图；13为在金属材料上涂覆一层抗蚀剂后所示的状态图；14为将预置的微结构图形模版与抗蚀剂进行压合后所示的状态图；16为在抗蚀剂上形成微结构图形后所示的状态图；17为将抗蚀剂上的微结构图形转移到金属材料上后所示的状态图；18为去除金属材料上的抗蚀剂后所示的状态图。Fig. 1 is the state diagram of a kind of preparation microstructure process that the embodiment of the present invention provides, wherein: 11 is the sectional view of microstructure stencil; 12 is the state diagram shown after forming a layer of required metal material on the substrate; 13 is The state diagram shown after coating a layer of resist on the metal material; 14 is the state diagram shown after pressing the preset microstructure graphic template and the resist; 16 is the state diagram formed on the resist The state diagram shown after the microstructure pattern; 17 is the state diagram shown after the microstructure pattern on the resist is transferred to the metal material; 18 is the state diagram shown after removing the resist on the metal material.
实施例一、Embodiment one,
参见图2，为本发明实施例一提供的一种制备微结构的方法流程图，该制备微结构的方法包括如下步骤：Referring to Fig. 2, it is a flow chart of a method for preparing a microstructure provided by Embodiment 1 of the present invention. The method for preparing a microstructure includes the following steps:
S21：在衬底上形成一层所需金属材料。S21: forming a layer of desired metal material on the substrate.
该衬底可以为柔性衬底或者刚性衬底。The substrate can be a flexible substrate or a rigid substrate.
S22：在金属材料上涂覆一层抗蚀剂。S22: Coating a layer of resist on the metal material.
该抗蚀剂可以为光刻胶或者除光刻胶以外的其他抗蚀材料。The resist may be photoresist or other resist materials other than photoresist.
S23：将预置的微结构图形模版与抗蚀剂进行压合。S23: Laminating the preset microstructure pattern template with the resist.
S24：在抗蚀剂上形成微结构图形后，将微结构图形模版与抗蚀剂分开。S24: After forming the microstructure pattern on the resist, separate the microstructure pattern template from the resist.
S25：将抗蚀剂上的微结构图形转移到金属材料上。S25: Transfer the microstructure pattern on the resist to the metal material.
S26：去除金属材料上的抗蚀材料。S26: Removing the resist material on the metal material.
本实施例中，通过在金属材料上涂敷一层抗蚀剂，将微结构图形模版上的图形转移到抗蚀剂上，将抗蚀剂与微结构图形模版分开，然后再将抗蚀剂上的微结构图形转移到金属材料上，通过抗蚀剂有效的保护了金属材料，并且能够大面积制备微米量级的结构，成本低、操作简单，可产业化。In this embodiment, by coating a layer of resist on the metal material, the pattern on the microstructure pattern template is transferred to the resist, the resist is separated from the microstructure pattern template, and then the resist The microstructure pattern on the surface is transferred to the metal material, the metal material is effectively protected by the resist, and a micron-scale structure can be prepared in a large area, the cost is low, the operation is simple, and it can be industrialized.
实施例二、Embodiment two,
参见图3，为本发明实施例二提供的一种制备微结构的方法流程图，该制备微结构的方法包括如下步骤：Referring to FIG. 3 , it is a flow chart of a method for preparing a microstructure provided by Embodiment 2 of the present invention. The method for preparing a microstructure includes the following steps:
S31：制作微米量级的微结构图形模版。S31: Making a microstructure pattern template in the order of microns.
具体的，提供一硬质基板；在基板上形成所需图形，该图形与微米量级的微结构图形相反。Specifically, a hard substrate is provided; a desired pattern is formed on the substrate, and the pattern is opposite to the microstructure pattern on the micron scale.
S32：在衬底上蒸镀一层所需金属材料。S32: Evaporating a layer of required metal material on the substrate.
其中，蒸镀技术属于本领域技术人员公知的技术，此处不再赘述。Wherein, the vapor deposition technology is well known to those skilled in the art, and will not be repeated here.
S33：在金属材料上涂覆一层抗蚀剂。S33: Coating a layer of resist on the metal material.
例如，在金属材料上涂覆一层光刻胶。在具体的实施过程中，抗蚀剂为光刻胶；或者除光刻胶以外的其他抗蚀剂，根据具体的需求选择。For example, a layer of photoresist is coated on a metal material. In a specific implementation process, the resist is photoresist; or resists other than photoresist are selected according to specific requirements.
S34：将微结构图形模版与抗蚀剂进行压合。S34: Pressing the microstructure graphic template and the resist.
例如，将微结构图形模版与抗蚀剂上下对齐，然后对微结构图形模版施压，使抗蚀剂填充到微结构图形模版的空腔，压力的大小以抗蚀剂填充满微结构图形模版的空腔为准。For example, align the microstructure pattern template with the resist up and down, and then apply pressure to the microstructure pattern template, so that the resist fills the cavity of the microstructure pattern template, and the magnitude of the pressure is such that the resist fills the microstructure pattern template The cavity prevails.
在具体的实施过程中，可采用热压的方式。In a specific implementation process, hot pressing can be used.
S35：在抗蚀剂上形成微结构图形后，将微结构图形模版与抗蚀剂分开。S35: After forming the microstructure pattern on the resist, separate the microstructure pattern template from the resist.
在具体的实施过程中，抗蚀剂上被压的凹下去的部分便成了极薄的抗蚀剂残留层，为了露出它下面的金属材料，还需进一步除去抗蚀剂残留层，可采用干法刻蚀的方式去除抗蚀剂残留层。In the specific implementation process, the depressed part of the resist becomes an extremely thin resist residue layer. In order to expose the metal material below it, the resist residue layer needs to be further removed. The residual resist layer is removed by dry etching.
S36：采用湿法蚀刻的方法，在金属材料上蚀刻出抗蚀剂上的微结构图形。S36: Etching the microstructure patterns on the resist on the metal material by wet etching.
其中，湿法蚀刻的方法是本领域技术人员公知的技术，此处不再赘述。Wherein, the method of wet etching is well known to those skilled in the art, and will not be repeated here.
S37：采用碱去除金属材料上的抗蚀剂。S37: Using alkali to remove the resist on the metal material.
在具体的实施过程中，可采用丙酮去除金属材料上的抗蚀剂。In a specific implementation process, acetone may be used to remove the resist on the metal material.
本实施例中，首先制作所需微结构图形模板，通过在金属材料上涂敷一层抗蚀剂，将微结构图形模版上的图形转移到抗蚀剂上，将抗蚀剂与微结构图形模版分开，然后再将抗蚀剂上的微结构图形转移到金属材料上，通过抗蚀剂有效的保护了金属材料，并且能够大面积制备所需微米量级的结构。In this embodiment, at first make the required microstructure pattern template, by coating a layer of resist on the metal material, the pattern on the microstructure pattern template is transferred to the resist, and the resist and the microstructure pattern The template is separated, and then the microstructure pattern on the resist is transferred to the metal material, the metal material is effectively protected by the resist, and the desired micron-scale structure can be prepared in a large area.
实施例三、Embodiment three,
参见图4，为本发明实施例三提供的一种制备微结构的方法流程图，该制备微结构的方法包括如下步骤：Referring to Figure 4, it is a flow chart of a method for preparing a microstructure provided by Embodiment 3 of the present invention, the method for preparing a microstructure includes the following steps:
S41：制作微米量级的微结构图形模版。S41: Making a pattern template of microstructure in micrometer scale.
具体的，提供一硬质基板；在基板上形成所需图形，该图形与微米量级的微结构图形相反。Specifically, a hard substrate is provided; a desired pattern is formed on the substrate, and the pattern is opposite to the microstructure pattern on the micron scale.
S42：在衬底上采用粘合剂压合一层所需金属材料。S42: Laminating a layer of required metal material on the substrate with an adhesive.
例如，在衬底上涂覆一层胶粘剂，然后将所需金属材料与衬底上下对齐，在一定的压力下进行冲压，使金属材料与衬底形成一个整体。For example, a layer of adhesive is coated on the substrate, and then the required metal material is aligned up and down with the substrate, and punched under a certain pressure, so that the metal material and the substrate form a whole.
S43：在金属材料上涂覆一层抗蚀剂。S43: Coating a layer of resist on the metal material.
例如，在金属材料上涂覆一层光刻胶。在具体的实施过程中，抗蚀剂为光刻胶；或者除光刻胶以外的其他抗蚀剂，根据具体的需求选择。For example, a layer of photoresist is coated on a metal material. In a specific implementation process, the resist is photoresist; or resists other than photoresist are selected according to specific requirements.
S44：将微结构图形模版与抗蚀剂进行压合。S44: Pressing the microstructure graphic template and the resist.
例如，将微结构图形模版与抗蚀剂上下对齐，然后对微结构图形模版施压，使抗蚀剂填充到微结构图形模版的空腔，压力的大小以抗蚀剂填充满微结构图形模版的空腔为准。For example, align the microstructure pattern template with the resist up and down, and then apply pressure to the microstructure pattern template, so that the resist fills the cavity of the microstructure pattern template, and the magnitude of the pressure is such that the resist fills the microstructure pattern template The cavity prevails.
在具体的实施过程中，可采用热压的方式。In a specific implementation process, hot pressing can be used.
S45：在抗蚀剂上形成微结构图形后，将微结构图形模版与抗蚀剂分开。S45: After forming the microstructure pattern on the resist, separate the microstructure pattern template from the resist.
在具体的实施过程中，抗蚀剂上被压的凹下去的部分便成了极薄的抗蚀剂残留层，为了露出它下面的金属材料，还需进一步除去抗蚀剂残留层，可采用干法刻蚀的方式去除抗蚀剂残留层。In the specific implementation process, the depressed part of the resist becomes an extremely thin resist residue layer. In order to expose the metal material below it, the resist residue layer needs to be further removed. The residual resist layer is removed by dry etching.
S46：采用干法刻蚀的方法，在金属材料上刻蚀出抗蚀剂上的微结构图形。S46: Etching the microstructure pattern on the resist on the metal material by dry etching.
例如，以抗蚀剂上的微结构图形作为掩模，金属材料进行选择性刻蚀，从而在金属材料上形成微结构图形。For example, using the microstructure pattern on the resist as a mask, the metal material is selectively etched to form a microstructure pattern on the metal material.
S47：采用碱去除金属材料上的抗蚀剂。S47: Using alkali to remove the resist on the metal material.
在具体的实施过程中，可采用丙酮去除金属材料上的抗蚀剂。In a specific implementation process, acetone may be used to remove the resist on the metal material.
本实施例相对于实施例二，在衬底上形成所需金属材料的方式不同，本实施例采用压合的方式在衬底上形成金属材料；将抗蚀剂上的微结构图形转移到金属材料上的方式不同，本实施例采用干法刻蚀的方法，在金属材料上刻蚀出抗蚀剂上的微结构图形。在具体的实施过程中可根据具体的需求进行选择适合的实施方式。Compared with the second embodiment, the method of forming the required metal material on the substrate in this embodiment is different. In this embodiment, the metal material is formed on the substrate by pressing; the microstructure pattern on the resist is transferred to the metal The method on the material is different. In this embodiment, the dry etching method is used to etch the microstructure pattern on the resist on the metal material. In the specific implementation process, an appropriate implementation manner can be selected according to specific requirements.
实施例四、Embodiment four,
参见图5，为本发明实施例四提供的一种制备微结构的方法流程图，该制备微结构的方法包括如下步骤：Referring to FIG. 5 , it is a flow chart of a method for preparing a microstructure provided by Embodiment 4 of the present invention. The method for preparing a microstructure includes the following steps:
S51：制作微米量级的微结构图形模版。S51: Making a microstructure pattern template in the order of micrometers.
具体的，提供一硬质基板；在基板上形成所需图形，该图形与微米量级的微结构图形相反。Specifically, a hard substrate is provided; a desired pattern is formed on the substrate, and the pattern is opposite to the microstructure pattern on the micron scale.
S52：在衬底上蒸镀一层所需金属材料。S52: Evaporating a layer of required metal material on the substrate.
其中，蒸镀技术属于本领域技术人员公知的技术，此处不再赘述。Wherein, the vapor deposition technology is well known to those skilled in the art, and will not be repeated here.
S53：在金属材料上涂覆一层抗蚀剂。S53: Coating a layer of resist on the metal material.
例如，在金属材料上涂覆一层正性光刻胶。在具体的实施过程中，抗蚀剂为光刻胶；或者除光刻胶以外的其他抗蚀剂，根据具体的需求选择。For example, coating a layer of positive photoresist on a metal material. In a specific implementation process, the resist is photoresist; or resists other than photoresist are selected according to specific requirements.
S54：将微结构图形模版与抗蚀剂进行压合。S54: Pressing the microstructure graphic template and the resist.
例如，将微结构图形模版与抗蚀剂上下对齐，然后对微结构图形模版施压，使抗蚀剂填充到微结构图形模版的空腔，压力的大小以抗蚀剂填充满微结构图形模版的空腔为准。For example, align the microstructure pattern template with the resist up and down, and then apply pressure to the microstructure pattern template, so that the resist fills the cavity of the microstructure pattern template, and the magnitude of the pressure is such that the resist fills the microstructure pattern template The cavity prevails.
在具体的实施过程中，可采用热压的方式。In a specific implementation process, hot pressing can be used.
S55：在抗蚀剂上形成微结构图形后，将微结构图形模版与抗蚀剂分开。S55: After forming the microstructure pattern on the resist, separate the microstructure pattern template from the resist.
在具体的实施过程中，抗蚀剂上被压的凹下去的部分便成了极薄的抗蚀剂残留层，为了露出它下面的金属材料，还需进一步除去抗蚀剂残留层，可采用干法刻蚀的方式去除抗蚀剂残留层。In the specific implementation process, the depressed part of the resist becomes an extremely thin resist residue layer. In order to expose the metal material below it, the resist residue layer needs to be further removed. The residual resist layer is removed by dry etching.
S56：采用干法刻蚀的方法，在金属材料上刻蚀出抗蚀剂上的微结构图形。S56: Etching the microstructure pattern on the resist on the metal material by dry etching.
例如，以抗蚀剂上的微结构图形作为掩模，金属材料进行选择性刻蚀，从而在金属材料上形成微结构图形。For example, using the microstructure pattern on the resist as a mask, the metal material is selectively etched to form a microstructure pattern on the metal material.
S57：采用碱去除金属材料上的抗蚀剂。S57: Using alkali to remove the resist on the metal material.
在具体的实施过程中，可采用丙酮去除金属材料上的抗蚀剂。In a specific implementation process, acetone may be used to remove the resist on the metal material.
本实施例相对于实施例二，将抗蚀剂上的微结构图形转移到金属材料上的方式不同，本实施例采用干法刻蚀的方法，在金属材料上刻蚀出抗蚀剂上的微结构图形。在具体的实施过程中可根据具体的需求进行选择适合的实施方式。Compared with the second embodiment, this embodiment transfers the microstructure pattern on the resist to the metal material in a different way. This embodiment adopts the dry etching method to etch the resist on the metal material. Microstructure graphics. In the specific implementation process, an appropriate implementation manner can be selected according to specific requirements.
实施例五、Embodiment five,
参见图6，为本发明实施例五提供的一种制备微结构的方法流程图，该制备微结构的方法包括如下步骤：Referring to Fig. 6, it is a flowchart of a method for preparing a microstructure provided by Embodiment 5 of the present invention. The method for preparing a microstructure includes the following steps:
S61：制作微米量级的微结构图形模版。S61: Making a pattern template of microstructure in micrometer scale.
具体的，提供一硬质基板；在基板上形成所需图形，该图形与微米量级的微结构图形相反。Specifically, a hard substrate is provided; a desired pattern is formed on the substrate, and the pattern is opposite to the microstructure pattern on the micron scale.
S62：在衬底上采用粘合剂压合一层所需金属材料。S62: Laminating a layer of required metal material on the substrate with an adhesive.
例如，在衬底上涂覆一层胶粘剂，然后将所需金属材料与衬底上下对齐，在一定的压力下进行冲压，使金属材料与衬底形成一个整体。For example, a layer of adhesive is coated on the substrate, and then the required metal material is aligned up and down with the substrate, and punched under a certain pressure, so that the metal material and the substrate form a whole.
S63：在金属材料上涂覆一层抗蚀剂。S63: Coating a layer of resist on the metal material.
例如，在金属材料上涂覆一层光刻胶。在具体的实施过程中，抗蚀剂为光刻胶；或者除光刻胶以外的其他抗蚀剂，根据具体的需求选择。For example, a layer of photoresist is coated on a metal material. In a specific implementation process, the resist is photoresist; or resists other than photoresist are selected according to specific requirements.
S64：将微结构图形模版与抗蚀剂进行压合。S64: Pressing the microstructure pattern template and the resist.
例如，将微结构图形模版与抗蚀剂上下对齐，然后对微结构图形模版施压，使抗蚀剂填充到微结构图形模版的空腔，压力的大小以抗蚀剂填充满微结构图形模版的空腔为准。For example, align the microstructure pattern template with the resist up and down, and then apply pressure to the microstructure pattern template, so that the resist fills the cavity of the microstructure pattern template, and the magnitude of the pressure is such that the resist fills the microstructure pattern template The cavity prevails.
在具体的实施过程中，可采用热压的方式。In a specific implementation process, hot pressing can be used.
S65：在抗蚀剂上形成微结构图形后，将微结构图形模版与抗蚀剂分开。S65: After forming the microstructure pattern on the resist, separating the microstructure pattern template from the resist.
在具体的实施过程中，抗蚀剂上被压的凹下去的部分便成了极薄的抗蚀剂残留层，为了露出它下面的金属材料，还需进一步除去抗蚀剂残留层，可采用干法刻蚀的方式去除抗蚀剂残留层。In the specific implementation process, the depressed part of the resist becomes an extremely thin resist residue layer. In order to expose the metal material below it, the resist residue layer needs to be further removed. The residual resist layer is removed by dry etching.
S66：采用湿法蚀刻的方法，在金属材料上蚀刻出抗蚀剂上的微结构图形。S66: Etching the microstructure patterns on the resist on the metal material by wet etching.
其中，湿法蚀刻的方法是本领域技术人员公知的技术，此处不再赘述。Wherein, the method of wet etching is well known to those skilled in the art, and will not be repeated here.
S67：采用碱去除金属材料上的抗蚀剂。S67: Using alkali to remove the resist on the metal material.
在具体的实施过程中，可采用丙酮去除金属材料上的抗蚀剂。In a specific implementation process, acetone may be used to remove the resist on the metal material.
本实施例相对于实施例二，在衬底上形成所需金属材料的方式不同，本实施例采用压合的方式在衬底上形成金属材料。在具体的实施过程中可根据具体的需求进行选择适合的实施方式。Compared with the second embodiment, the method of forming the required metal material on the substrate is different in this embodiment. In this embodiment, the metal material is formed on the substrate by pressing. In the specific implementation process, an appropriate implementation manner can be selected according to specific requirements.
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。The embodiments of the present invention have been described in detail above, and specific examples have been used in this paper to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only used to help understand the method and core idea of the present invention; at the same time, for Those skilled in the art will have changes in the specific implementation and scope of application according to the idea of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.
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