相关申请的交叉引用Cross References to Related Applications
本申请要求2010年10月11日提交的韩国专利申请No.10-2010-0098923的优先权，其全部其内容通过引用整体合并于此。This application claims priority from Korean Patent Application No. 10-2010-0098923 filed on Oct. 11, 2010, the entire contents of which are hereby incorporated by reference.
技术领域technical field
本发明涉及一种发光器件。The invention relates to a light emitting device.
背景技术Background technique
由于暗点、寿命短等等的出现导致要求频繁地更换荧光灯。此外，由于荧光材料的使用使得它们不满足更加环保照明器件的需要。为此，逐渐地用其它的光源替代荧光灯。Fluorescent lamps are required to be frequently replaced due to the occurrence of dark spots, short life, and the like. Furthermore, they do not meet the demand for more environmentally friendly lighting devices due to the use of fluorescent materials. For this reason, fluorescent lamps are gradually being replaced by other light sources.
在发光器件当中，作为替代光源的发光二极管(LED)受到了很大的关注。LED具有诸如快速处理速度和低功率消耗的半导体的优点，其是环保的，并且具有高节能效果。因此，LED是重要的下一代光源。因此，正在积极地进行替代现有的荧光灯的LED的实际应用。Among light emitting devices, light emitting diodes (LEDs) have received much attention as an alternative light source. LEDs have the advantages of semiconductors such as fast processing speed and low power consumption, are environmentally friendly, and have high energy saving effects. Therefore, LED is an important next-generation light source. Therefore, practical use of LEDs to replace existing fluorescent lamps is actively being carried out.
当前，诸如LED的半导体发光器件应用于电视、监视器、笔记本、蜂窝电话、以及装备有显示装置的各种电器。特别地，它们被广泛地用作替代冷阴极荧光灯(CCFL)的背光单元。Currently, semiconductor light emitting devices such as LEDs are used in televisions, monitors, notebooks, cellular phones, and various electric appliances equipped with display devices. In particular, they are widely used as backlight units replacing cold cathode fluorescent lamps (CCFLs).
最近，要求发光器件具有高亮度使得它们可以被用作用于照明的光源。为了实现此高亮度，正在进行研究，以能够实现均匀的电流扩散并且因此增强发光效率的发光器件的制造。Recently, light emitting devices are required to have high luminance so that they can be used as light sources for illumination. In order to achieve this high luminance, research is ongoing for the fabrication of light emitting devices capable of achieving uniform current spreading and thus enhancing luminous efficiency.
附图说明Description of drawings
将会详细地参考附图描述实施例，其中相同的附图标记表示相同的元件，其中：Embodiments will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like elements, in which:
图1是示出根据如在此广泛地描述的实施例的发光器件的截面图；1 is a cross-sectional view illustrating a light emitting device according to embodiments as broadly described herein;
图2至图6是示出用于制造图1中所示的发光器件的方法的系列处理的截面图；2 to 6 are cross-sectional views showing a series of processes for the method of manufacturing the light emitting device shown in FIG. 1;
图7是根据如在此广泛地描述的实施例的包括图1中所示的发光器件的发光器件封装的透视图；7 is a perspective view of a light emitting device package including the light emitting device shown in FIG. 1 according to embodiments as broadly described herein;
图8是根据如在此广泛地描述的实施例的包括发光器件的照明装置的透视图；Figure 8 is a perspective view of a lighting device including a light emitting device according to embodiments as broadly described herein;
图9是沿着图8中所示的照明装置的线A-A’截取的照明装置的截面图；Fig. 9 is a sectional view of the lighting device taken along the line A-A' of the lighting device shown in Fig. 8;
图10是根据在如此广泛地描述的实施例的包括发光器件的液晶显示器的透视图；Figure 10 is a perspective view of a liquid crystal display including a light emitting device according to embodiments so broadly described herein;
图11是根据如在此广泛地描述的另一实施例的包括发光器件的液晶显示器的透视图。11 is a perspective view of a liquid crystal display including a light emitting device according to another embodiment as broadly described herein.
具体实施方式detailed description
现在将会详细地参考优选实施例，在附图中示出其示例。Reference will now be made in detail to the preferred embodiments, examples of which are illustrated in the accompanying drawings.
结合附图根据下述实施例将会清楚地理解优点和特征以及实现优点和特征的方法。然而，实施例不受限制并且可以以各种不同的形式来实现。实施例仅被提供以更加全面地示出并且使得本领域技术人员全面地理解范围。仅通过权利要求来限定该范围。因此，在一些实施例中，没有详细地示出众所周知的工艺、众所周知的器件结构以及众所周知的技术以避免不清楚的解释。在说明书中将会使用相同的附图标记来表示相同或者相似的部件。Advantages and features, and methods for achieving the advantages and features will be clearly understood from the following embodiments in conjunction with the accompanying drawings. However, the embodiments are not limited and may be implemented in various forms. The embodiments are provided merely to more fully illustrate and to enable those skilled in the art to fully appreciate the scope. The scope is limited only by the claims. Thus, in some embodiments, well-known processes, well-known device structures, and well-known technologies are not shown in detail to avoid obscuring explanations. The same reference numerals will be used throughout the specification to designate the same or similar components.
空间上的相对术语，“在下方”、“在下面”、“下”、“在上方”、“在上面”等等可以用于表示一个器件或者组成元件和其它器件或者组成元件之间的关系，如附图中所示。应理解的是，空间上的相对术语包括在附图中示出的方向以及在使用或者操作期间的器件的其它方向。例如，在附图中所示的器件被翻转的情况下，被布置在另一器件的“下方”或者“下面”的器件可以被布置在另一器件的“上方”。因此，在示例性术语中，“在下面”可以包括“在下方”或者“在下方”和“在上方”。器件可以布置在其它方向上。结果，可以取决于取向来理解空间上的相对术语。Spatially relative terms, "under", "beneath", "under", "above", "over" and the like may be used to indicate the relationship between one device or constituent element and another device or constituent element , as shown in the attached figure. It will be understood that the spatially relative terms include the orientation shown in the figures as well as other orientations of the device during use or operation. For example, in a case where a device shown in the drawings is turned over, a device arranged "below" or "beneath" another device may be arranged "above" the other device. Thus, in exemplary terms, "beneath" may include "beneath" or "beneath" and "above". Devices may be arranged in other orientations. As a result, spatially relative terms can be understood depending on orientation.
在说明书中使用的术语仅被提供以示出实施例并且不应被理解为限制本发明的范围和精神。在说明书中，单数形式的术语包括其复数形式，除非另有描述。在如在此使用的术语“包括”中，提及的组件、步骤、操作和/或器件不排除一个或者多个其它组件、步骤、操作和/或器件的存在或者添加。Terms used in the specification are provided to illustrate the embodiments only and should not be construed as limiting the scope and spirit of the present invention. In the specification, the terms of the singular form include the plural forms thereof unless otherwise described. In the term "comprising" as used herein, a reference to a component, step, operation and/or means does not exclude the presence or addition of one or more other components, steps, operations and/or means.
除非另有定义，否则在此使用的所有术语(包括技术和科学术语)可以意在具有本领域的技术人员理解的意义。另外，应不异常地或者夸大地解释在普通字典中定义的术语，除非清楚地具体地对其进行了定义。Unless defined otherwise, all terms (including technical and scientific terms) used herein are intended to have the meaning understood by one of ordinary skill in the art. In addition, terms defined in common dictionaries should not be interpreted unusually or exaggeratedly unless they are clearly and specifically defined.
在附图中，为了描述的清楚和方便，各层的厚度或者尺寸被夸大、省略或者示意性地示出。因此，各个元件的尺寸没有整体上反映其实际尺寸。In the drawings, for clarity and convenience of description, the thickness or size of each layer is exaggerated, omitted or schematically shown. Therefore, the size of each element does not reflect its actual size as a whole.
另外，基于附图中的图示描述在发光器件的结构的描述期间参考的角度和方向。在发光器件的结构的描述中，如果没有清楚地描述与角度和位置关系有关的基准点，那么将参考附图。In addition, angles and directions referred to during the description of the structure of the light emitting device are described based on illustrations in the drawings. In the description of the structure of the light emitting device, if a reference point related to angle and positional relationship is not clearly described, the drawings will be referred to.
在下文中，为了进一步详细地示出根据实施例的发光器件的形状，将会基于第一方向(X)和垂直于第一方向(X)的第二方向(Y)来描述发光器件。Hereinafter, in order to illustrate the shape of the light emitting device according to the embodiment in further detail, the light emitting device will be described based on a first direction (X) and a second direction (Y) perpendicular to the first direction (X).
图1是示出根据如在此广泛地描述的实施例的发光器件的截面图。FIG. 1 is a cross-sectional view illustrating a light emitting device according to an embodiment as broadly described herein.
参考图1，如在此具体化和广泛地描述的发光器件可以包括基板110、和布置在基板110上的发光结构120。Referring to FIG. 1 , a light emitting device as embodied and broadly described herein may include a substrate 110 , and a light emitting structure 120 disposed on the substrate 110 .
基板110可以由具有优秀的导热性的材料制成。替代地，基板110可以由导电材料制成。例如，基板110可以由金属材料或者导电陶瓷制成。The substrate 110 may be made of a material having excellent thermal conductivity. Alternatively, the substrate 110 may be made of a conductive material. For example, the substrate 110 may be made of metallic material or conductive ceramics.
基板110可以具有单层结构。替代地，基板110可以具有双层结构或者具有三层或者更多层的多层结构。The substrate 110 may have a single layer structure. Alternatively, the substrate 110 may have a double layer structure or a multilayer structure of three or more layers.
尽管示出的实施例中的基板110已经被描述为具有导电性，但是本公开不限于此。例如，基板110可以是非导电的。Although the substrate 110 in the illustrated embodiment has been described as being conductive, the present disclosure is not limited thereto. For example, substrate 110 may be non-conductive.
当基板110由金属材料制成时，基板110的材料可以是从金(Au)、镍(Ni)、钨(W)、钼(Mo)、铜(Cu)、铝(Al)、钽(Ta)、银(Ag)、铂(Pt)、铬(Cr)、以及其合金中选择的金属材料。可以通过层压不同材料的两层或者更多层来形成基板110。When the substrate 110 is made of a metal material, the material of the substrate 110 can be selected from gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ta ), silver (Ag), platinum (Pt), chromium (Cr), and metal materials selected from their alloys. The substrate 110 may be formed by laminating two or more layers of different materials.
基板110用于容易地发散从发光器件100产生的热，并且因此实现热稳定性的增强。The substrate 110 serves to easily dissipate heat generated from the light emitting device 100, and thus achieve enhancement of thermal stability.
当基板110由半导体材料制成时，可以使用诸如硅(Si)、锗(Ge)、砷化镓(GaAs)、氧化锌(ZnO)、碳化硅(SiC)、锗化硅(SiGe)、氮化镓(GaN)、或者氧化镓(Ga2O3)的载具晶圆来形成基板110的材料。When the substrate 110 is made of a semiconductor material, such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon carbide (SiC), silicon germanium (SiGe), nitrogen Gallium nitride (GaN) or gallium oxide (Ga2 O3 ) carrier wafer is used to form the material of the substrate 110 .
基板110可以具有透光性质。例如，当基板110使用硅而形成为预定的厚度或者更少时，它可以具有透光性质。当然，基板110不限于此条件。The substrate 110 may have a light-transmitting property. For example, when the substrate 110 is formed to a predetermined thickness or less using silicon, it may have a light-transmitting property. Of course, the substrate 110 is not limited to this condition.
基板110可以由具有高导热性的材料制成。基板110可以具有比第二半导体层126低的折射率，以便于实现光提取效率的增强。而且，为了进一步增强光提取效率，基板110可以在其上表面上设置有构图的蓝宝石基板(PSS)结构。当然，基板110不限于上述条件或者结构。The substrate 110 may be made of a material having high thermal conductivity. The substrate 110 may have a lower refractive index than the second semiconductor layer 126 in order to achieve enhancement of light extraction efficiency. Also, in order to further enhance light extraction efficiency, the substrate 110 may be provided with a patterned sapphire substrate (PSS) structure on its upper surface. Of course, the substrate 110 is not limited to the above conditions or structures.
基板110可以用于容易地发散从发光器件100产生的热，并且因此实现发光器件100的热稳定性的增强。The substrate 110 may serve to easily dissipate heat generated from the light emitting device 100 and thus achieve enhancement of thermal stability of the light emitting device 100 .
可以使用电化学金属沉积方法或者使用共晶金属的结合方法实现基板110的形成。Formation of the substrate 110 may be achieved using an electrochemical metal deposition method or a bonding method using eutectic metals.
基板110可以包括电接触第一电极130的第一基板部分110a；和第二基板部分110b，该第二基板部分110b电接触第二电极150同时与第一基板部分110a隔开间距sc。The substrate 110 may include a first substrate portion 110a electrically contacting the first electrode 130; and a second substrate portion 110b electrically contacting the second electrode 150 while being spaced apart from the first substrate portion 110a by a distance sc.
第一和第二基板部分110a和110b相互隔开间距sc，以相互电气地绝缘。不同极性的电压可以分别被施加给第一和第二电极130和150。The first and second substrate portions 110a and 110b are spaced apart from each other by a distance sc to be electrically insulated from each other. Voltages of different polarities may be applied to the first and second electrodes 130 and 150, respectively.
尽管第一和第二基板部分110a和110b被布置为在与第二基板部分110b隔开间距sc的状态下第一基板部分110a围绕第二基板部分110b，但是本公开不限于此。Although the first and second substrate parts 110a and 110b are arranged such that the first substrate part 110a surrounds the second substrate part 110b in a state spaced apart from the second substrate part 110b by a distance sc, the present disclosure is not limited thereto.
内部的间隔部分形成为空气，但是可以形成为绝缘材料，本公开不限于此。The inner spacer part is formed as air, but may be formed as an insulating material, and the present disclosure is not limited thereto.
结合层111可以被布置在基板110的第一和第二基板部分110a和110b上。结合层111可以实现将第一和第二电极130和150容易地结合到基板110。The bonding layer 111 may be disposed on the first and second substrate portions 110 a and 110 b of the substrate 110 . The bonding layer 111 may enable easy bonding of the first and second electrodes 130 and 150 to the substrate 110 .
结合层111可以形成为实现结合并且避免扩散。例如，结合层111可以由铟(In)、锡(Sn)、银(Ag)、铌(Nb)、镍(Ni)、铝(Al)、铜(Cu)、铂(Pt)、铅(Pd)、钨(W)、镍(Ni)、钌(Ru)、钼(Mo)、铱(Ir)、铑(Rh)、钽(Ta)、铪(Hf)、锆(Zr)、铌(Nb)、以及钒(V)、或者其合金中的至少一个制成。因此，结合层111可以具有单层结构或者多层结构。The bonding layer 111 may be formed to achieve bonding and prevent diffusion. For example, the bonding layer 111 can be made of indium (In), tin (Sn), silver (Ag), niobium (Nb), nickel (Ni), aluminum (Al), copper (Cu), platinum (Pt), lead (Pd ), tungsten (W), nickel (Ni), ruthenium (Ru), molybdenum (Mo), iridium (Ir), rhodium (Rh), tantalum (Ta), hafnium (Hf), zirconium (Zr), niobium (Nb ), and vanadium (V), or at least one of its alloys. Therefore, the bonding layer 111 may have a single-layer structure or a multi-layer structure.
电接触第二半导体层126的第二电极150可以被布置在被布置在第二基板部分110b上的结合层111的一部分上。The second electrode 150 electrically contacting the second semiconductor layer 126 may be disposed on a portion of the bonding layer 111 disposed on the second substrate portion 110b.
第二电极150可以包括反射层(未示出)和电极层(未示出)。反射层可以被布置在结合层111上，并且电极层可以被布置在反射层上。当然，第二电极150不限于此布置。The second electrode 150 may include a reflective layer (not shown) and an electrode layer (not shown). A reflective layer may be disposed on the bonding layer 111, and an electrode layer may be disposed on the reflective layer. Of course, the second electrode 150 is not limited to this arrangement.
电极层可以由导电材料制成。例如，电极层可以由镍(Ni)、铂(Pt)、钌(Ru)、铱(Ir)、铑(Rh)，钽(Ta)、钼(Mo)、钛(Ti)、银(Ag)、钨(W)、铜(Cu)、铬(Cr)、钯(Pd)、钒(V)、钴(Co)、铌(Nb)、锆(Zr)、铟锡氧化物(ITO)、铝锌氧化物(AZO)、以及铟锌氧化物(IZO)中的至少一个制成。The electrode layer can be made of conductive material. For example, the electrode layer can be made of nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti), silver (Ag) , Tungsten (W), Copper (Cu), Chromium (Cr), Palladium (Pd), Vanadium (V), Cobalt (Co), Niobium (Nb), Zirconium (Zr), Indium Tin Oxide (ITO), Aluminum Zinc oxide (AZO), and at least one of indium zinc oxide (IZO).
同时，反射层和电极层可以具有相同的宽度。而且，反射层和电极层可以具有不同的宽度或者不同的长度，或者可以具有不同的宽度和不同的长度。当然，反射层和电极层不限于上述情况。Meanwhile, the reflective layer and the electrode layer may have the same width. Also, the reflective layer and the electrode layer may have different widths or different lengths, or may have different widths and different lengths. Of course, the reflective layer and the electrode layer are not limited to the above.
可以通过同时固化过程来形成反射层和电极层。当反射层和电极层被同时固化时，可以获得优异的结合力。The reflective layer and the electrode layer may be formed through a simultaneous curing process. When the reflective layer and the electrode layer are cured simultaneously, excellent bonding force can be obtained.
电流阻挡层(未示出)可以插入在第二电极150和发光结构120之间，以便于避免从第二电极150提供的电流的电流集边现象。A current blocking layer (not shown) may be interposed between the second electrode 150 and the light emitting structure 120 in order to avoid a current crowding phenomenon of the current supplied from the second electrode 150 .
电接触第一半导体层122的第一电极130可以被布置在被布置在第一基板部分110a上的结合层111的一部分上。The first electrode 130 electrically contacting the first semiconductor layer 122 may be disposed on a portion of the bonding layer 111 disposed on the first substrate portion 110a.
第一电极130可以在与第二电极150电绝缘的状态下与第二电极150隔开。第一电极130可以由与第二电极120相同的材料制成。第一电极150可以以与第二电极150相同的方式包括反射层和电极层。当然，第一电极130不限于上述布置、条件、以及结构。The first electrode 130 may be separated from the second electrode 150 in a state of being electrically insulated from the second electrode 150 . The first electrode 130 may be made of the same material as the second electrode 120 . The first electrode 150 may include a reflective layer and an electrode layer in the same manner as the second electrode 150 . Of course, the first electrode 130 is not limited to the above-mentioned arrangements, conditions, and structures.
绝缘层140可以插入在被布置在第一基板部分110a上的第一电极130和第二电极层126之间。The insulating layer 140 may be interposed between the first electrode 130 and the second electrode layer 126 disposed on the first substrate portion 110a.
绝缘层140被布置在发光结构120的侧表面和第二半导体层126的下表面的一部分上。绝缘层140可以包括第一绝缘层142，该第一绝缘层142被布置在第二半导体层126的下表面部分上；和第二绝缘层144，该第二绝缘层144被布置在发光结构120的侧表面上。发光结构120的侧表面是倾斜的。The insulating layer 140 is disposed on side surfaces of the light emitting structure 120 and a portion of the lower surface of the second semiconductor layer 126 . The insulating layer 140 may include a first insulating layer 142 disposed on a lower surface portion of the second semiconductor layer 126 ; and a second insulating layer 144 disposed on the light emitting structure 120 . on the side surface. Side surfaces of the light emitting structure 120 are inclined.
尽管发光结构120的各个侧表面被示出为被划分为倾斜部分和从倾斜部分延伸的台阶部分，但是本公开不限于此。Although each side surface of the light emitting structure 120 is illustrated as being divided into an inclined portion and a stepped portion extending from the inclined portion, the present disclosure is not limited thereto.
第一和第二绝缘层142和144可以形成为具有一体化结构或者分开的结构。第一和第二绝缘层142和144的材料可以是不同的。当然，第一和第二绝缘层142和144不限于这样的条件。The first and second insulating layers 142 and 144 may be formed to have an integrated structure or a separate structure. Materials of the first and second insulating layers 142 and 144 may be different. Of course, the first and second insulating layers 142 and 144 are not limited to such conditions.
第一绝缘层142可以与第二电极150的边缘部分隔开间距sc。第二绝缘层144可以被布置在发光结构120的倾斜表面上。第二绝缘层144可以延伸到第一半导体层122的台阶部分。当然，本公开不限于上述结构。The first insulating layer 142 may be spaced apart from the edge portion of the second electrode 150 by a distance sc. The second insulating layer 144 may be disposed on the inclined surface of the light emitting structure 120 . The second insulating layer 144 may extend to the stepped portion of the first semiconductor layer 122 . Of course, the present disclosure is not limited to the above structures.
第二绝缘层144没有延伸到第一半导体层122的上表面。即，第一半导体层122的台阶部分可以向外暴露。当然，本公开不限于此结构。The second insulating layer 144 does not extend to the upper surface of the first semiconductor layer 122 . That is, the stepped portion of the first semiconductor layer 122 may be exposed to the outside. Of course, the present disclosure is not limited to this structure.
第一和第二绝缘层142和144可以具有不同的宽度，但是它们不限于此。The first and second insulating layers 142 and 144 may have different widths, but they are not limited thereto.
第一和第二绝缘层142和144可以由绝缘材料制成。例如，第一和第二绝缘层142和144可以由氧化硅(SiO2)、氮化硅(Si3N4)等等制成。第一和第二绝缘材料142和144可以由具有比第一电极130低的导电性的金属材料制成使得它们比第一电极130更加接近绝缘体。当然，第一和第二绝缘层142和144不限于这样的条件。The first and second insulating layers 142 and 144 may be made of insulating material. For example, the first and second insulating layers 142 and 144 may be made of silicon oxide (SiO2 ), silicon nitride (Si3 N4 ), or the like. The first and second insulating materials 142 and 144 may be made of a metal material having lower conductivity than the first electrode 130 such that they are closer to the insulator than the first electrode 130 . Of course, the first and second insulating layers 142 and 144 are not limited to such conditions.
第一电极130可以包括布置在绝缘层140上的侧表面部分132和延伸通过形成在第一半导体层122的边缘部分处的孔(未示出)的延伸部分134。The first electrode 130 may include a side surface portion 132 disposed on the insulating layer 140 and an extension portion 134 extending through a hole (not shown) formed at an edge portion of the first semiconductor layer 122 .
侧表面部分132可以比绝缘层140长。可以通过沉积工艺生长侧表面部分132。The side surface portion 132 may be longer than the insulating layer 140 . The side surface portion 132 may be grown through a deposition process.
侧表面部分132可以延伸到形成在第一半导体层122的台阶部分，即，第一半导体层122的边缘部分处的各孔。The side surface portion 132 may extend to each hole formed at a stepped portion of the first semiconductor layer 122 , ie, an edge portion of the first semiconductor layer 122 .
延伸部分134分别连接到侧表面部分132，并且在经过孔之后分别延伸到第一半导体层122的上表面。The extension portions 134 are connected to the side surface portions 132 respectively, and respectively extend to the upper surface of the first semiconductor layer 122 after passing through the holes.
电极焊盘152可以被布置在每个延伸部分134的上表面和延伸部分134周围的第一半导体层122的上表面部分上。The electrode pad 152 may be disposed on an upper surface of each extension part 134 and an upper surface portion of the first semiconductor layer 122 around the extension part 134 .
每个电极焊盘152可以被布置在第一半导体层122的上表面的边缘部分上。指电极(臂电极)也被布置在第一半导体层122的上表面的边缘部分上，以连接到电极焊盘152。当然，本公开不限于此结构。Each electrode pad 152 may be disposed on an edge portion of the upper surface of the first semiconductor layer 122 . Finger electrodes (arm electrodes) are also arranged on edge portions of the upper surface of the first semiconductor layer 122 to be connected to the electrode pads 152 . Of course, the present disclosure is not limited to this structure.
除了第一和第二半导体层122和126之外，发光结构120可以包括插入在第一和第二半导体层122和126之间的有源层124。In addition to the first and second semiconductor layers 122 and 126 , the light emitting structure 120 may include an active layer 124 interposed between the first and second semiconductor layers 122 and 126 .
第一半导体层122可以由半导体化合物制成。例如，可以使用III-V族或者II-VI族半导体实施第一半导体层122。第一半导体层122可以掺杂有第一导电类型掺杂物。例如，可以通过n型半导体层实施第一半导体层122。N型半导体层可以由诸如GaN、AlGaN以及InGaN的GaN基化合物半导体材料中的一个制成，并且可以掺杂有n型掺杂物。The first semiconductor layer 122 may be made of a semiconductor compound. For example, the first semiconductor layer 122 may be implemented using a group III-V or group II-VI semiconductor. The first semiconductor layer 122 may be doped with a first conductive type dopant. For example, the first semiconductor layer 122 may be implemented by an n-type semiconductor layer. The N-type semiconductor layer may be made of one of GaN-based compound semiconductor materials such as GaN, AlGaN, and InGaN, and may be doped with an n-type dopant.
同时，被布置在第一半导体层122的上表面的边缘部分上的电极焊盘152可以由具有高导电性的材料制成，例如，由镍(Ni)等等制成。为了实现光提取效率的增强，可以使用特定的蚀刻方法，在没有形成电极焊盘152的第一半导体层122的表面部分处或者第一半导体层122的整个表面部分形成粗糙128。Meanwhile, the electrode pad 152 disposed on an edge portion of the upper surface of the first semiconductor layer 122 may be made of a material having high conductivity, for example, nickel (Ni) or the like. In order to achieve enhancement of light extraction efficiency, the roughness 128 may be formed at a surface portion of the first semiconductor layer 122 where the electrode pad 152 is not formed or the entire surface portion of the first semiconductor layer 122 using a specific etching method.
如上所述，第一电极310的延伸部分134分别延伸通过以接触电极焊盘152的孔可以形成在第一半导体层122的上表面的边缘部分处。As described above, holes through which the extension portions 134 of the first electrodes 310 respectively extend to contact the electrode pads 152 may be formed at edge portions of the upper surface of the first semiconductor layer 122 .
即，第一半导体层122包括第一区域(未示出)，该第一区域垂直地重叠第二电极150；和第二区域(未示出)，该第二区域没有重叠第一区域同时包括形成有孔的边缘部分。That is, the first semiconductor layer 122 includes a first region (not shown) that vertically overlaps the second electrode 150; and a second region (not shown) that does not overlap the first region while including An edge portion having a hole is formed.
有源层124可以被布置在第一半导体层122的下面。有源层124是电极和空穴复合的区域。根据电子和空穴的复合，有源层124变为低能级，使得它可以产生具有对应于能级的波长的光。The active layer 124 may be disposed under the first semiconductor layer 122 . The active layer 124 is a region where electrodes and holes recombine. According to the recombination of electrons and holes, the active layer 124 becomes a low energy level so that it can generate light having a wavelength corresponding to the energy level.
有源层124可以由例如具有InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，并且0≤x+y≤1)的化学式的半导体材料制成。有源层124可以具有单量子阱结构或者多量子阱(MQW)结构。The active layer 124 may be made of, for example, a semiconductor material having a chemical formula of InxAlyGa1-xyN(0≤x≤1 , 0≤y≤1, and 0≤x+y≤1). The active layer 124 may have a single quantum well structure or a multiple quantum well (MQW) structure.
因此，更多电子聚集在量子阱层的低能级部分中。结果，电子和空穴复合的可能性增加，使得可以获得增强的发光效果。有源层124也可以具有量子线结构或者量子点结构。Therefore, more electrons gather in the low energy level portion of the quantum well layer. As a result, the possibility of recombination of electrons and holes increases, so that enhanced luminescent effects can be obtained. The active layer 124 may also have a quantum wire structure or a quantum dot structure.
第二半导体层126可以被布置在有源层124下面。The second semiconductor layer 126 may be disposed under the active layer 124 .
第二半导体层126可以由半导体化合物制成。例如，可以使用III-V族或者II-VI族化合物半导体实施第二半导体层126。第二半导体层126可以掺杂有第二导电类型掺杂物。例如，可以通过p型半导体层实施第二半导体层126。在这样的情况下，第二半导体层126可以将空穴注入到有源层124中。p型半导体层可以由例如具有InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，并且0≤x+y≤1)的化学式的半导体材料制成，例如，由GaN、AlN、AlGaN、InGaN、InN、InAlGaN或者AlInN制成。p型半导体层可以掺杂有诸如Mg、Zn、Ca、Sr、以及Ba的p型掺杂物。The second semiconductor layer 126 may be made of a semiconductor compound. For example, the second semiconductor layer 126 may be implemented using group III-V or group II-VI compound semiconductors. The second semiconductor layer 126 may be doped with a second conductive type dopant. For example, the second semiconductor layer 126 may be implemented by a p-type semiconductor layer. In this case, the second semiconductor layer 126 may inject holes into the active layer 124 . The p-type semiconductor layer can be made of, for example, a semiconductor material having a chemical formula of InxAlyGa1-xyN(0≤x≤1 , 0≤y≤1, and 0≤x+y≤1), for example, by Made of GaN, AlN, AlGaN, InGaN, InN, InAlGaN or AlInN. The p-type semiconductor layer may be doped with p-type dopants such as Mg, Zn, Ca, Sr, and Ba.
第三半导体层(未示出)可以形成在第二半导体层126的下面。可以通过n型半导体层实施第三半导体层。A third semiconductor layer (not shown) may be formed under the second semiconductor layer 126 . The third semiconductor layer may be implemented by an n-type semiconductor layer.
同时，可以使用金属有机化学气相沉积(MOCVD)方法、化学气相沉积(CVD)方法、等离子体增强化学气相沉积(PECVD)方法、分子束外延(MBE)方法、氢化物气相外延(HVPE)方法、或者溅射方法形成第一半导体层122、有源层124、以及第二半导体层126。当然，形成方法不限于上述方法。Meanwhile, metal organic chemical vapor deposition (MOCVD) method, chemical vapor deposition (CVD) method, plasma enhanced chemical vapor deposition (PECVD) method, molecular beam epitaxy (MBE) method, hydride vapor phase epitaxy (HVPE) method, Alternatively, the first semiconductor layer 122 , the active layer 124 , and the second semiconductor layer 126 may be formed by sputtering. Of course, the forming method is not limited to the above-mentioned method.
与上述实施例相反，可以通过p型半导体层实施第一半导体层122，并且可以通过n型半导体层实施第二半导体层124。当然，本公开不限于此实施例。Contrary to the above-described embodiments, the first semiconductor layer 122 may be implemented by a p-type semiconductor layer, and the second semiconductor layer 124 may be implemented by an n-type semiconductor layer. Of course, the present disclosure is not limited to this embodiment.
第一半导体层122可以包括没有形成孔的台阶部分。可以在下述过程中形成台阶部分，其中，在发光器件100的制造中，在蓝宝石基板(未示出)上生长发光结构120，并且然后通过隔离工艺将其划分为多个均具有与器件相对应的尺寸的发光结构。因此，可以进行孔的形成。The first semiconductor layer 122 may include a stepped portion in which no hole is formed. The stepped portion may be formed in a process in which, in the manufacture of the light emitting device 100, the light emitting structure 120 is grown on a sapphire substrate (not shown), and then divided into a plurality of light emitting structures each having a shape corresponding to the device through an isolation process. light-emitting structure of the size. Therefore, hole formation can be performed.
在下文中，将参考图2至图6详细地描述用于制造如上所述的发光器件(未示出)的方法。Hereinafter, a method for manufacturing the light emitting device (not shown) as described above will be described in detail with reference to FIGS. 2 to 6 .
图2至图6是示出用于制造图1中所示的发光器件的方法的一系列工艺的截面图。2 to 6 are cross-sectional views showing a series of processes for the method of manufacturing the light emitting device shown in FIG. 1 .
参考图2，发光结构120可以生长在蓝宝石基板101上。Referring to FIG. 2 , a light emitting structure 120 may be grown on a sapphire substrate 101 .
蓝宝石基板101可以由能够实现容易的半导体生长的材料制成。The sapphire substrate 101 can be made of a material that enables easy semiconductor growth.
例如，蓝宝石基板101的材料可以从由蓝宝石(Al2O3)、GaN、SiC、ZnO、Si、GaP、InP、以及GaAs组成的组中选择。尽管未示出，但是缓冲层(未示出)可以形成在蓝宝石基板101和发光结构120之间。For example, the material of the sapphire substrate 101 may be selected from the group consisting of sapphire (Al2O3), GaN, SiC, ZnO, Si, GaP, InP, and GaAs. Although not shown, a buffer layer (not shown) may be formed between the sapphire substrate 101 and the light emitting structure 120 .
缓冲层可以由能够减少蓝宝石基板101和发光结构120之间的晶格常数差的材料制成。The buffer layer may be made of a material capable of reducing a lattice constant difference between the sapphire substrate 101 and the light emitting structure 120 .
例如，缓冲层可以由III族和V族元素的组合制成。替代地，缓冲层可以由从GaN、InN、AlN、InGaN、AlGaN、InAlGaN、以及AlInN中选择的一个制成。缓冲层可以掺杂有掺杂物。For example, the buffer layer can be made of a combination of group III and group V elements. Alternatively, the buffer layer may be made of one selected from GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer may be doped with a dopant.
发光结构120可以包括第一半导体层122、有源层124以及第二半导体层126。该结构与参考图1描述的结构相同，并且因此，将不进行详细的描述。The light emitting structure 120 may include a first semiconductor layer 122 , an active layer 124 and a second semiconductor layer 126 . This structure is the same as that described with reference to FIG. 1 , and therefore, will not be described in detail.
图2(a)示出可分离的基板101和发光结构120的截面。图2(b)是示出可分离的基板101和发光结构120的透视图。FIG. 2( a ) shows a cross-section of the separable substrate 101 and the light emitting structure 120 . FIG. 2( b ) is a perspective view showing a detachable substrate 101 and a light emitting structure 120 .
参考图3，可以通过隔离工艺将在可分离的基板101上生长的发光结构120划分为均具有与器件相对应的尺寸的第一至第四发光结构120_1至120_4。Referring to FIG. 3 , the light emitting structure 120 grown on the separable substrate 101 may be divided into first to fourth light emitting structures 120_1 to 120_4 each having a size corresponding to a device through an isolation process.
这时，台阶部分s1可以形成在第一至第四发光结构120_1至120_4中的每一个处，以从第一半导体层122形成台阶。At this time, a stepped portion s1 may be formed at each of the first to fourth light emitting structures 120_1 to 120_4 to form a step from the first semiconductor layer 122 .
台阶部分s1对应于如结合图1描述的第一半导体层122的第二区域。The stepped portion s1 corresponds to the second region of the first semiconductor layer 122 as described in connection with FIG. 1 .
布置有第二半导体层126和有源层124的发光结构120_1至120_4中的每一个的部分对应于如参考图1描述的第一半导体层122的第一区域。A portion of each of the light emitting structures 120_1 to 120_4 where the second semiconductor layer 126 and the active layer 124 are disposed corresponds to the first region of the first semiconductor layer 122 as described with reference to FIG. 1 .
换言之，在发光结构120的生长之后执行的隔离工艺期间，包括在第一至第四发光结构120_1至120_4中的每一个中的台阶部分s1可以形成为通过台阶部分s1暴露第一半导体层122的区域。In other words, during the isolation process performed after the growth of the light emitting structure 120, the step portion s1 included in each of the first to fourth light emitting structures 120_1 to 120_4 may be formed to expose the first semiconductor layer 122 through the step portion s1. area.
尽管在示出的实施例中台阶部分s1已经被描述为形成在第一半导体层122的边缘部分处，但是本公开不限于此。例如，台阶部分s1可以形成在第一半导体层122的一侧处。Although the step portion s1 has been described as being formed at an edge portion of the first semiconductor layer 122 in the illustrated embodiment, the present disclosure is not limited thereto. For example, a stepped portion s1 may be formed at one side of the first semiconductor layer 122 .
因此，第一至第四发光结构120_至120_4可以具有台阶形状。至少一个孔h可以形成在台阶部分s1处。Accordingly, the first to fourth light emitting structures 120_ to 120_4 may have a stepped shape. At least one hole h may be formed at the stepped portion s1.
至少一个孔h可以具有圆形。替代地，孔h可以具有多边形形状或者具有弯曲边缘的形状。当然，孔不限于这样的形状。At least one hole h may have a circular shape. Alternatively, the hole h may have a polygonal shape or a shape with curved edges. Of course, the holes are not limited to such shapes.
至少一个孔h可以从台阶部分s1的第一表面延伸到与第一表面相对的台阶部分s1的第二表面。At least one hole h may extend from a first surface of the stepped portion s1 to a second surface of the stepped portion s1 opposite to the first surface.
图3是示出第一至第四发光结构120_1至120_4和可分离的基板101的透视图。FIG. 3 is a perspective view illustrating the first to fourth light emitting structures 120_1 to 120_4 and the detachable substrate 101 .
尽管包括在第一至第四发光结构120_1至120_4中的每一个中的第一半导体层122被示出为与第一至第四发光结构120_1至120_4中剩余部分隔开，但是本公开不限于此。Although the first semiconductor layer 122 included in each of the first to fourth light emitting structures 120_1 to 120_4 is shown separated from the rest of the first to fourth light emitting structures 120_1 to 120_4, the present disclosure is not limited to this.
例如，第一至第四发光结构120_1至120_4的第一半导体层122可以不相互隔离。For example, the first semiconductor layers 122 of the first to fourth light emitting structures 120_1 to 120_4 may not be isolated from each other.
图4示出一个发光结构。例如，图4(a)是截面图，而图4(b)是透视图。Figure 4 shows a light emitting structure. For example, FIG. 4( a ) is a sectional view, and FIG. 4( b ) is a perspective view.
参考图4，示出第一发光结构120_1。在下文中，将会结合第一发光结构120_1描述发光器件100的制造。当然，可以通过与第一发光结构120_1相同的工艺将第二至第四发光结构120_2至120_4中的每一个形成到发光器件100中。Referring to FIG. 4 , a first light emitting structure 120_1 is shown. Hereinafter, fabrication of the light emitting device 100 will be described in conjunction with the first light emitting structure 120_1. Of course, each of the second to fourth light emitting structures 120_2 to 120_4 may be formed into the light emitting device 100 through the same process as the first light emitting structure 120_1.
第二电极150被布置在第二半导体层126的中心部分上。第一绝缘层142可以被布置在第二半导体层126的边缘部分上同时与第二电极150隔开。The second electrode 150 is disposed on a central portion of the second semiconductor layer 126 . The first insulating layer 142 may be disposed on an edge portion of the second semiconductor layer 126 while being spaced apart from the second electrode 150 .
第一绝缘层142可以具有小于第一电极130的厚度d2的厚度d1，但是本公开不限于此。The first insulating layer 142 may have a thickness d1 less than the thickness d2 of the first electrode 130, but the present disclosure is not limited thereto.
其后，第二绝缘层144可以被布置为接触第一绝缘层142同时沿着第一发光结构120_1的侧表面延伸到第一半导体层122的台阶部分s1。Thereafter, the second insulating layer 144 may be disposed to contact the first insulating layer 142 while extending to the stepped portion s1 of the first semiconductor layer 122 along the side surface of the first light emitting structure 120_1 .
因此，第一和第二绝缘层142和144保护第一发光结构120_1。已经结合图1描述了此结构并且，将不会给出其详细描述。Accordingly, the first and second insulating layers 142 and 144 protect the first light emitting structure 120_1. This structure has been described with reference to FIG. 1 and a detailed description thereof will not be given.
在第一和第二绝缘层142和144的形成之后，第一电极130可以被布置在第一绝缘层142上。After the formation of the first and second insulating layers 142 and 144 , the first electrode 130 may be disposed on the first insulating layer 142 .
如上所述，第一电极130可以包括侧表面部分132，该侧表面部分132被布置在第一和第二绝缘层142和144上；和延伸部分134，该延伸部分134延伸通过形成在第一半导体层122处的孔h。As described above, the first electrode 130 may include the side surface portion 132 disposed on the first and second insulating layers 142 and 144; and the extension portion 134 extending through the The hole h at the semiconductor layer 122 .
在该情况下，被布置在第一绝缘层142上的侧表面部分132具有小于第一电极130的厚度d2的厚度d3。第二电极150的厚度d2可以等于第一绝缘层142的厚度d1和第一电极130的厚度d3。当然，本公开不限于此。In this case, the side surface portion 132 disposed on the first insulating layer 142 has a thickness d3 smaller than the thickness d2 of the first electrode 130 . The thickness d2 of the second electrode 150 may be equal to the thickness d1 of the first insulating layer 142 and the thickness d3 of the first electrode 130 . Of course, the present disclosure is not limited thereto.
延伸部分134分别电连接到侧表面部分132。延伸部分134可以分别沿着孔h的内部，即，通过第一半导体层122延伸。The extension parts 134 are electrically connected to the side surface parts 132, respectively. The extension parts 134 may extend along the inside of the hole h, ie, through the first semiconductor layer 122, respectively.
在这样的情况下，延伸部分134可以具有与孔h相同的形状。每个延伸部分134可以具有大于每个侧表面部分132的宽度w2的宽度w1。当然，本公开不限于此情况。In this case, the extension part 134 may have the same shape as the hole h. Each extension portion 134 may have a width w1 greater than a width w2 of each side surface portion 132 . Of course, the present disclosure is not limited to this case.
当每个延伸部分134的宽度w1增加时，能够增加延伸部分134与在可分离的基板101的分离之后布置在其上的电极焊盘152的接触面积。When the width w1 of each extension portion 134 is increased, the contact area of the extension portion 134 with the electrode pad 152 disposed thereon after separation of the separable substrate 101 can be increased.
每个延伸部分134可以被布置在第一半导体层122的非C面上，但是本公开不限于此。Each extension part 134 may be disposed on the non-C-plane of the first semiconductor layer 122, but the present disclosure is not limited thereto.
每个侧表面部分132可以具有朝着对应的延伸部分134逐渐增加的厚度d4，但是本公开不限于此。Each side surface part 132 may have a thickness d4 gradually increasing toward the corresponding extension part 134, but the present disclosure is not limited thereto.
参考图5，结合层111和基板110结合到第一和第二电极130和150。激光束hv照射到可分离的基板101的下表面上以便于将可分离的基板101与第一发光结构120_1分离。Referring to FIG. 5 , the bonding layer 111 and the substrate 110 are bonded to the first and second electrodes 130 and 150 . The laser beam hv is irradiated onto the lower surface of the detachable substrate 101 in order to separate the detachable substrate 101 from the first light emitting structure 120_1.
尽管被照射到可分离的基板101的下表面上的激光束hv也照射到第一半导体层122的台阶部分s1上，但是由于台阶部分s1使得这些激光束不会照射到第二绝缘层144和有源层126。Although the laser beams hv irradiated onto the lower surface of the separable substrate 101 are also irradiated onto the stepped portion s1 of the first semiconductor layer 122, these laser beams are not irradiated to the second insulating layer 144 and the second insulating layer 144 due to the stepped portion s1. active layer 126 .
激光束hv会损坏第一半导体层122的台阶部分s1的下表面。然而，该损坏可以表现与形成在发光表面上的粗糙相同的效果，从而其不会影响发光效率。The laser beam hv may damage the lower surface of the stepped portion s1 of the first semiconductor layer 122 . However, this damage may exhibit the same effect as roughness formed on the light emitting surface, so that it does not affect light emitting efficiency.
因为能够通过第一半导体层122的台阶部分s1防止激光束hv直接照射到有源层124，所以能够防止有源层124的损坏。结果，能够容易地确保发光器件100的可靠性。Since the laser beam hv can be prevented from being directly irradiated to the active layer 124 by the stepped portion s1 of the first semiconductor layer 122, damage to the active layer 124 can be prevented. As a result, the reliability of the light emitting device 100 can be easily ensured.
参考图6，在可分离的基板101的分离之后，粗糙128的图案可以形成在第一半导体层122的部分上或者第一半导体层122的整个部分上。可以在粗糙128的形成之后结合电极焊盘152。Referring to FIG. 6 , after separation of the separable substrate 101 , a pattern of roughness 128 may be formed on a portion of the first semiconductor layer 122 or on the entire portion of the first semiconductor layer 122 . The electrode pad 152 may be bonded after the formation of the roughness 128 .
根据示出的实施例的发光器件可以被安装在封装中。可以制备多个发光器件封装，并且然后将其排列在基板上。光学构件，即，导光板、棱镜片、扩散片等等可以布置在发光器件封装的光学路径上。The light emitting device according to the illustrated embodiments may be mounted in a package. A plurality of light emitting device packages may be prepared and then arranged on the substrate. Optical members, ie, a light guide plate, a prism sheet, a diffusion sheet, etc., may be arranged on an optical path of the light emitting device package.
图7是根据如在此广泛地描述的实施例的包括图1中所示的发光器件的发光器件封装的透视图。7 is a perspective view of a light emitting device package including the light emitting device shown in FIG. 1 according to embodiments as broadly described herein.
图7是穿过发光器件封装200的一部分看到的透视图。尽管在本实施例中发光器件封装200是顶视图，但是发光器件封装200可以是侧视图并且不限于此。FIG. 7 is a perspective view seen through a part of the light emitting device package 200 . Although the light emitting device package 200 is a top view in the present embodiment, the light emitting device package 200 may be a side view and is not limited thereto.
参考图7，发光器件封装200可以包括发光器件210和其中布置发光器件210的主体220。Referring to FIG. 7 , the light emitting device package 200 may include a light emitting device 210 and a body 220 in which the light emitting device 210 is disposed.
主体220可以包括第一阻挡肋222，该第一阻挡肋222被布置在第一方向(未示出)上；和第二阻挡肋224，该第二阻挡肋224被布置在与第一方向交叉的第二方向(未示出)上。第一和第二阻挡肋222和224可以一体地形成并且可以通过挤压成型、蚀刻等等形成并且不限于此。The main body 220 may include a first barrier rib 222 arranged in a first direction (not shown); and a second barrier rib 224 arranged in a direction crossing the first direction. in the second direction (not shown). The first and second barrier ribs 222 and 224 may be integrally formed and may be formed by extrusion molding, etching, etc. and are not limited thereto.
即，第一和第二阻挡肋222和224可以由从诸如聚邻苯二甲酰胺(PPA)的树脂、硅(Si)、铝(Al)、氮化铝(AlN)、氧化铝(AlOx)、光敏玻璃(PSG)、聚酰胺9T(PA9T)、间规聚苯乙烯(SPS)、金属、蓝宝石(Al2O3)、氧化铍(BeO)、陶瓷、以及印制电路板(PCB)中选择的至少一个制成。That is, the first and second barrier ribs 222 and 224 may be made of resin such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), aluminum oxide (AlOx) , photosensitive glass (PSG), polyamide 9T (PA9T), syndiotactic polystyrene (SPS), metal, sapphire (Al2O3), beryllium oxide (BeO), ceramic, and printed circuit board (PCB) at least One is made.
可以从取决于发光器件210的应用和设计从包括三角形、矩形、多边形以及圆形的各种形状中选择第一和第二阻挡肋222和224的顶部形状，并且不限于此。The top shape of the first and second barrier ribs 222 and 224 may be selected from various shapes including triangle, rectangle, polygon, and circle depending on the application and design of the light emitting device 210, and is not limited thereto.
另外，第一和第二阻挡肋222和224形成其中布置发光器件210的腔体。腔体的横截面可以具有杯形状、凹陷容器形状等等。组成腔体的第一和第二阻挡肋222和224可以具有下方向上的倾斜面。In addition, the first and second barrier ribs 222 and 224 form a cavity in which the light emitting device 210 is disposed. The cross-section of the cavity may have a cup shape, a sunken container shape, or the like. The first and second barrier ribs 222 and 224 constituting the cavity may have downwardly upward inclined surfaces.
另外，腔体的平表面可以从包括三角形、矩形、多边形以及圆形的各种形状中选择，但是不限于此。In addition, the flat surface of the cavity may be selected from various shapes including triangle, rectangle, polygon, and circle, but is not limited thereto.
第一和第二引线框架213和214可以被布置在主体220下面。第一引线框架213和第二引线框架214包含诸如钛(Ti)、铜(Cu)、镍(Ni)、金(Au)、铬(Cr)、钽(Ta)、铂(Pt)、锡(Sn)、银(Ag)、磷(P)、铝(Al)、铟(In)、钯(Pd)、钴(Co)、硅(Si)、锗(Ge)、铪(Hf)、钌(Ru)、铁(Fe)、以及其合金的金属。另外，第一和第二引线框架可以具有单层或者多层结构，并且不限于此。The first and second lead frames 213 and 214 may be disposed under the body 220 . The first lead frame 213 and the second lead frame 214 contain materials such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin ( Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium ( Ru), iron (Fe), and metals of their alloys. In addition, the first and second lead frames may have a single-layer or multi-layer structure, and are not limited thereto.
第一和第二阻挡肋222和224的内侧面可以相对于第一和第二引线框架213和214中的一个以预定的角度倾斜。从发光器件210发射的光的反射角可以取决于倾斜角而变化。因此，能够控制放出到外部的光的取向角。随着光的取向角的减少，从发光器件210发射到外部的光的会聚性增加。另一方面，随着光的取向角的增加，从发光器件210发射到外部的光的会聚性减少。Inner sides of the first and second barrier ribs 222 and 224 may be inclined at a predetermined angle with respect to one of the first and second lead frames 213 and 214 . A reflection angle of light emitted from the light emitting device 210 may vary depending on an inclination angle. Therefore, the orientation angle of light emitted to the outside can be controlled. Convergence of light emitted from the light emitting device 210 to the outside increases as the orientation angle of light decreases. On the other hand, as the orientation angle of light increases, the convergence of light emitted from the light emitting device 210 to the outside decreases.
主体220的内侧可以具有多个倾斜角并且不限于此。The inner side of the body 220 may have a plurality of inclination angles and is not limited thereto.
第一和第二引线框架213和214电连接到发光器件210，分别连接到外电源(未示出)的正(+)和负(-)电极，并且将电力提供到发光器件210。The first and second lead frames 213 and 214 are electrically connected to the light emitting device 210 , respectively connected to positive (+) and negative (−) electrodes of an external power source (not shown), and supply power to the light emitting device 210 .
在本实施例中，发光器件210被布置在第一引线框架213上，第二引线框架214与第一引线框架213隔开，并且发光器件210被管芯结合到第一引线框架213并且通过布线(未示出)引线键合到第二引线框架214以接收来自于第一和第二引线框架213和214的电力。In this embodiment, the light emitting device 210 is arranged on the first lead frame 213, the second lead frame 214 is separated from the first lead frame 213, and the light emitting device 210 is die-bonded to the first lead frame 213 and wired (Not shown) leads are bonded to the second lead frame 214 to receive power from the first and second lead frames 213 and 214 .
在此，发光器件210可以被结合到具有不同极性的第一引线框架213和第二引线框架214。Here, the light emitting device 210 may be bonded to the first lead frame 213 and the second lead frame 214 having different polarities.
另外，发光器件210被引线键合或者管芯结合到第一和第二引线框架213和214，并且对连接形成方法没有限制。In addition, the light emitting device 210 is wire-bonded or die-bonded to the first and second lead frames 213 and 214, and there is no limitation on the connection forming method.
在本实施例中，发光器件210被布置第一引线框架213中，但是不限于此。In this embodiment, the light emitting device 210 is arranged in the first lead frame 213, but is not limited thereto.
另外，发光器件210可以通过粘附构件(未示出)粘附到第一引线框架213。In addition, the light emitting device 210 may be adhered to the first lead frame 213 by an adhesive member (not shown).
在这里，绝缘屏障216可以形成在第一和第二引线框架213和214之间以防止第一和第二引线框架213和214之间的电气短路。Here, an insulation barrier 216 may be formed between the first and second lead frames 213 and 214 to prevent electrical short between the first and second lead frames 213 and 214 .
在本实施例中，绝缘屏障216可以具有半圆形的顶部并且其形状不限于此。In this embodiment, the insulation barrier 216 may have a semicircular top and its shape is not limited thereto.
主体213可以被设置有阴极标记217。阴极标记217划分发光器件210的极性(即，第一和第二引线框架213和214的极性)，并且因此可以用于防止当第一和第二引线框架213和214电连接时的混乱。The body 213 may be provided with cathode markings 217 . The cathode mark 217 divides the polarity of the light emitting device 210 (ie, the polarity of the first and second lead frames 213 and 214), and thus can be used to prevent confusion when the first and second lead frames 213 and 214 are electrically connected. .
发光器件210可以是发光二极管。发光二极管可以是发射诸如红色、绿色、蓝色或者白光的彩色光的彩色发光二极管，或者发射紫外光的紫外(UV)发光二极管，并且不限于此。可以存在多个安装在第一引线框架213上的发光器件210，至少一个发光器件210可以安装在第一和第二引线框架213和214上，并且发光器件210的数目和位置没有限制。The light emitting device 210 may be a light emitting diode. The light emitting diode may be a color light emitting diode emitting colored light such as red, green, blue, or white light, or an ultraviolet (UV) light emitting diode emitting ultraviolet light, and is not limited thereto. There may be a plurality of light emitting devices 210 mounted on the first lead frame 213, at least one light emitting device 210 may be mounted on the first and second lead frames 213 and 214, and the number and positions of the light emitting devices 210 are not limited.
在这里，发光器件210可以是图1中所示的发光器件中的一个，但是不限于此。Here, the light emitting device 210 may be one of the light emitting devices shown in FIG. 1 , but is not limited thereto.
主体220可以包括填充在腔体中的树脂材料218。即，树脂材料218可以具有双模制结构或者三模制结构并且不限于此。The body 220 may include a resin material 218 filled in the cavity. That is, the resin material 218 may have a double molded structure or a triple molded structure and is not limited thereto.
另外，树脂材料218可以是膜类型并且包括荧光体和光扩散材料中的至少一个。In addition, the resin material 218 may be a film type and include at least one of phosphors and light diffusion materials.
另外，树脂材料218可以包括包含荧光体和光扩散材料的透光材料，但是不限于此。In addition, the resin material 218 may include a light-transmitting material including a phosphor and a light-diffusing material, but is not limited thereto.
图8是包括根据如在此广泛地描述的实施例的发光器件的照明设备的透视图，图9是沿着图8中所示的照明设备的线A-A’截取的照明设备的截面图。8 is a perspective view of a lighting device including a light emitting device according to an embodiment as broadly described herein, and FIG. 9 is a cross-sectional view of the lighting device taken along line AA' of the lighting device shown in FIG. 8 .
在下文中，为了更好的理解，将会基于纵向方向(Z)、垂直于纵向方向(Z)的水平方向(Y)、以及垂直于纵向方向(Z)和水平方向(Y)的高度方向(X)来描述照明设备300。Hereinafter, for better understanding, it will be based on the longitudinal direction (Z), the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the height direction ( X) to describe the lighting device 300.
即，图9是沿着纵向方向(Z)和高度方向(X)的横截面截取的并且从水平方向(Y)看到的图8的照明设备300的截面图。That is, FIG. 9 is a cross-sectional view of the lighting device 300 of FIG. 8 taken along a longitudinal direction (Z) and a cross-section in a height direction (X) and viewed from a horizontal direction (Y).
参考图8和图9，照明设备300可以包括主体310、连接到主体310的盖330以及布置在主体310的两端处的端帽350。Referring to FIGS. 8 and 9 , the lighting device 300 may include a main body 310 , a cover 330 connected to the main body 310 , and end caps 350 disposed at both ends of the main body 310 .
发光器件模块340连接到主体310的底部并且主体310可以由表现优异的导电性和优异的散热效果的金属材料组成以通过主体310的上表面放出从均具有图1的发光器件(未示出)的发光器件封装344产生的热。The light emitting device module 340 is connected to the bottom of the main body 310 and the main body 310 may be composed of a metal material exhibiting excellent electrical conductivity and excellent heat dissipation effect to emit light from the light emitting device (not shown) each having FIG. 1 through the upper surface of the main body 310. The heat generated by the light emitting device package 344.
发光器件封装344可以以多行安装在印制电路板(PCB)342上同时具有各种颜色，以形成多色阵列。根据需要，可以以相同的距离安装发光器件封装344，或者可以以不同的距离安装发光器件封装344以使得能够进行亮度调节。PCB 342可以是金属芯PCB(MPPCB)或者阻燃剂4(FR4)框架。The light emitting device packages 344 may be mounted on a printed circuit board (PCB) 342 in multiple rows while having various colors to form a multi-color array. According to need, the light emitting device packages 344 may be installed at the same distance, or may be installed at different distances to enable brightness adjustment. PCB 342 may be a metal core PCB (MPPCB) or a flame retardant 4 (FR4) frame.
每个发光器件封装344包括形成有多个孔并且由导电材料制成的膜。Each light emitting device package 344 includes a film formed with a plurality of holes and made of a conductive material.
盖330可以具有圆形的形状以围绕主体310的下表面，但是本公开不限于此。The cover 330 may have a circular shape to surround the lower surface of the main body 310, but the present disclosure is not limited thereto.
盖330针对外部异物等等保护发光器件模块340。盖330可以包含光扩散颗粒，以实现防眩光效果和从发光器件封装644产生的光的均匀发射。The cover 330 protects the light emitting device module 340 from external foreign matter and the like. The cover 330 may contain light diffusing particles to achieve an anti-glare effect and uniform emission of light generated from the light emitting device package 644 .
盖630的内表面和外表面中的至少一个可以设置有棱镜图案。At least one of inner and outer surfaces of the cover 630 may be provided with a prism pattern.
而且，荧光物质层可以被涂覆在盖330的内表面和外表面中的至少一个上。Also, a phosphor layer may be coated on at least one of inner and outer surfaces of the cover 330 .
因为从发光器件封装344产生的光通过盖330发射到外部，因此盖330应具有高的光透射性和足以耐受由发光器件封装344产生的热的耐热性。Since light generated from the light emitting device package 344 is emitted to the outside through the cover 330 , the cover 330 should have high light transmittance and heat resistance sufficient to withstand heat generated by the light emitting device package 344 .
为此，盖330可以由聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)或聚甲基丙烯酸甲酯(PMMA)形成。For this, the cover 330 may be formed of polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA).
端帽350可以被布置在主体310的两端并用于密封电源装置(未示出)。End caps 350 may be disposed at both ends of the main body 310 and serve to seal a power supply device (not shown).
每个端帽350被设置有电力插头352，使得根据示出的实施例的照明设备300可以直接连接到为传统的荧光灯设置的端子，而无需额外的连接器。Each end cap 350 is provided with a power plug 352 so that the lighting device 300 according to the illustrated embodiment can be directly connected to terminals provided for conventional fluorescent lamps without the need for additional connectors.
图10是示出包括根据如在此广泛地描述的实施例的发光器件的液晶显示设备的透视图。FIG. 10 is a perspective view illustrating a liquid crystal display device including a light emitting device according to an embodiment as broadly described herein.
图10示出了边缘发光型液晶显示设备400，其包括液晶显示面板410和用于向液晶显示面板410提供光的背光单元470。FIG. 10 shows an edge light type liquid crystal display device 400 including a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410 .
液晶显示面板410利用从背光单元470提供的光来显示图像。液晶显示面板410包括彩色滤光片基板412和薄膜晶体管基板714，该彩色滤光片基板412和薄膜晶体管基板4714彼此相对从而其间插入有液晶。The liquid crystal display panel 410 displays images using light supplied from the backlight unit 470 . The liquid crystal display panel 410 includes a color filter substrate 412 and a thin film transistor substrate 714 facing each other with liquid crystals interposed therebetween.
彩色滤光片基板412能够实现将通过液晶显示面板410显示的颜色图像。The color filter substrate 412 can realize a color image to be displayed through the liquid crystal display panel 410 .
薄膜晶体管基板414通过驱动膜417电连接到其上安装有多个电路元件的印刷电路板418。薄膜晶体管基板414响应于从印刷电路板418提供的驱动信号并且可以将来自于印刷电路板418的驱动电压施加给液晶。The thin film transistor substrate 414 is electrically connected through a driving film 417 to a printed circuit board 418 on which a plurality of circuit elements are mounted. The thin film transistor substrate 414 responds to a driving signal supplied from the printed circuit board 418 and can apply a driving voltage from the printed circuit board 418 to the liquid crystal.
薄膜晶体管基板414包括在由诸如玻璃或者塑料构成的其它基板上形成为薄膜的像素电极和薄膜晶体管。The thin film transistor substrate 414 includes pixel electrodes and thin film transistors formed as thin films on other substrates such as glass or plastic.
背光单元470包括：发光器件模块420，该发光器件模块420发射光；导光板430，该导光板430将从发光器件模块420发射的光变成平面光并将该光提供到液晶显示面板410；多个膜450、466和464，其使来自于导光板430的光的亮度均匀并且改进垂直入射；以及反射片440，该反射片440朝向导光板430反射发射到导光板430背面的光。The backlight unit 470 includes: a light emitting device module 420 emitting light; a light guide plate 430 converting light emitted from the light emitting device module 420 into planar light and providing the light to the liquid crystal display panel 410; a plurality of films 450 , 466 , and 464 that uniformize brightness of light from the light guide plate 430 and improve normal incidence; and a reflective sheet 440 that reflects light emitted to the back of the light guide plate 430 toward the light guide plate 430 .
发光器件模块420包括多个发光器件封装424和PCB422，多个发光器件封装424安装在PCB 422上以形成阵列。The light emitting device module 420 includes a plurality of light emitting device packages 424 and a PCB 422 on which the plurality of light emitting device packages 424 are mounted to form an array.
同时，背光单元470包括：扩散膜466，该扩散膜466朝向液晶显示面板410扩散从导光板430入射的光；棱镜膜450，该棱镜膜450聚集扩散的光并且从而改进垂直入射；以及保护膜464，该保护膜464保护陵镜膜450。Meanwhile, the backlight unit 470 includes: a diffusion film 466 that diffuses light incident from the light guide plate 430 toward the liquid crystal display panel 410; a prism film 450 that collects the diffused light and thereby improves vertical incidence; and a protective film 464 , the protective film 464 protects the mirror film 450 .
图11是包括根据如在此广泛地描述的另一实施例的包括发光器件的液晶显示设备的透视图。11 is a perspective view of a liquid crystal display device including a light emitting device according to another embodiment as broadly described herein.
不详细地提及在图9中示出并且描述的内容。What is shown and described in FIG. 9 is not mentioned in detail.
图11示出直下型液晶显示设备500，该直下型液晶显示设备500包括液晶显示面板510和背光单元570，该背光单元570向液晶显示面板510提供光。FIG. 11 shows a direct type liquid crystal display device 500 including a liquid crystal display panel 510 and a backlight unit 570 that provides light to the liquid crystal display panel 510 .
在图10中已经描述了液晶显示面板510并且因此省略其详细解释。The liquid crystal display panel 510 has been described in FIG. 10 and thus a detailed explanation thereof is omitted.
背光单元570包括：多个发光器件模块523、反射片524、其中接受发光器件模块523和反射片524的下底座530、以及设置在发光器件模块523上的扩散板540和多个光学膜560。The backlight unit 570 includes a plurality of light emitting device modules 523 , a reflective sheet 524 , a lower base 530 in which the light emitting device modules 523 and the reflective sheet 524 are received, and a diffusion plate 540 and a plurality of optical films 560 disposed on the light emitting device modules 523 .
每个发光器件模块523包括PCB 521和多个发光器件封装，所述多个发光器件封装524安装在PCB 521上以形成阵列。Each light emitting device module 523 includes a PCB 521 and a plurality of light emitting device packages 524 mounted on the PCB 521 to form an array.
反射片524朝向液晶显示面板510反射从发光器件封装522产生的光，以提高发光效率。The reflective sheet 524 reflects light generated from the light emitting device package 522 toward the liquid crystal display panel 510 to improve luminous efficiency.
同时，从发光器件模块523发射的光入射到扩散板540上并且光学膜560被设置在扩散板540上。光学膜560包括扩散膜566、棱镜膜550以及保护膜564。Meanwhile, light emitted from the light emitting device module 523 is incident on the diffusion plate 540 and the optical film 560 is disposed on the diffusion plate 540 . The optical film 560 includes a diffusion film 566 , a prism film 550 and a protective film 564 .
在实施例中，照明设备400和液晶显示设备500和600可以被包括在照明系统中并且包括发光器件封装的照明装置可以被包括在照明系统中。In an embodiment, the lighting device 400 and the liquid crystal display devices 500 and 600 may be included in a lighting system and a lighting device including a light emitting device package may be included in the lighting system.
如具体化并且广泛地描述的发光器件可以允许展现提高的发光效率、稳定性，并且提高安全性和可靠性。A light emitting device as embodied and broadly described may allow exhibiting improved luminous efficiency, stability, and enhanced safety and reliability.
在本说明书中对于“一个实施例”、“实施例”、“示例实施例”等的引用意味着结合实施例描述的特定特征、结构或特性被包括在本公开的至少一个实施例中。在说明书中，在不同位置出现的这类短语不必都表示相同的实施例。此外，当结合任何实施例描述特定特征、结构或特性时，都认为结合实施例中的其他实施例实现这样的特征、结构或特性也是本领域技术人员所能够想到的。Reference in this specification to "one embodiment," "an embodiment," "example embodiment," etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. The appearances of such phrases in different places in the specification are not necessarily all referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with any embodiment, it is also considered to be possible for those skilled in the art to implement such feature, structure or characteristic in combination with other embodiments.
虽然已经参照本公开的多个示例性实施例描述了实施例，但是应该理解，本领域的技术人员可以想到，多个其他修改和实施例将落入本公开原理的精神和范围内。更加具体地，在本说明书、附图和所附权利要求的范围内的主题组合布置的组成部件和/或布置中，各种变化和修改都是可能的。除了组成部件和/或布置中的变化和修改之外，对于本领域的技术人员来说，替选使用也将是显而易见的。Although embodiments of the present disclosure have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the constituent parts and/or arrangements of the subject combination arrangement within the scope of the specification, the drawings and the appended claims. In addition to changes and modifications in component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100098923AKR101690508B1 (en) | 2010-10-11 | 2010-10-11 | Light emitting device |
| KR10-2010-0098923 | 2010-10-11 |
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| CN102447032A CN102447032A (en) | 2012-05-09 |
| CN102447032Btrue CN102447032B (en) | 2016-12-14 |
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