CN102412242B - Light-emitting diode (LED) chipset capable of being connected to alternating current directly - Google Patents

Abstract

The invention relates to a light-emitting diode (LED) chipset capable of being directly connected to alternating current directly. The LED chipset at least comprises two integration resistor light-emitting diode chips which are connected in parallel with alternating current positive and negative electrodes; each integration resistor light-emitting diode chip comprises a first semiconductor resistor and a second semiconductor resistor; a plurality of light-emitting diodes are connected in series between the first semiconductor resistor and the second semiconductor resistor; and the two integration resistor light-emitting diode chips alternately emit light under the action of the alternating current according to the forward conduction principle of the diode. The two integration resistor light-emitting diode chips are connected in parallel and orientations of PN junctions of the plurality of the light-emitting diodes of the two integration resistor light-emitting diode chips are opposite to each other, one integration resistor light-emitting diode chip works in the positive semi-cycle of the alternating current and the other integration resistor light-emitting diode chip works in the negative semi-cycle of the alternating current, so that the LED chipset can always work under the alternating current.

Description

Translated fromChinese

一种可直接连接在交流电上的LED芯片组A LED chipset that can be directly connected to AC

技术领域technical field

本发明涉及一种发光二极管芯片，尤其是涉及一种可直接连接在交流电上的LED芯片组。The invention relates to a light-emitting diode chip, in particular to an LED chip group which can be directly connected to an alternating current.

背景技术Background technique

发光二极管芯片，是led灯的核心组件，也就是指的P-N结。其主要功能是：把电能转化为光能，芯片的主要材料为单晶硅。半导体晶片由两部分组成，一部分是P型半导体，在它里面空穴占主导地位，另一端是N型半导体，在这边主要是电子。但这两种半导体连接起来的时候，它们之间就形成一个P-N结。当电流通过导线作用于这个晶片的时候，电子就会被推向P区，在P区里电子跟空穴复合，然后就会以光子的形式发出能量，这就是LED发光的原理。而光的波长也就是光的颜色，是由形成P-N结的材料决定的。 The light-emitting diode chip is the core component of the LED lamp, which refers to the P-N junction. Its main function is to convert electrical energy into light energy, and the main material of the chip is monocrystalline silicon. Semiconductor wafer is made up of two parts, and a part is P-type semiconductor, and hole occupies an leading position in it, and the other end is N-type semiconductor, and here mainly is electron. But time these two kinds of semiconductors couple together, between them, just form a P-N junction. When electric current acts on this chip by wire time, electron will be pushed to P district, and in P district, electron is with hole recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is. And the wavelength of light i.e. the color of light, be determined by the material forming P-N junction. the

发光二极管芯片的P-N结具有单向导电性：即正向导通，反向不导通。对红黄光发光二极管，其正向导通电压在2伏左右，而对蓝绿光二极管，正向导通电压在3.0伏左右。当二极管的正向电压高于导通电压后，流过二极管的电流将随着外加电压的增加而迅速增加；当流过二极管的电流过大时，由于二极管本身产生的热量过大而可能被烧毁。目前，一般1瓦蓝光二极管的工作电流在350毫安左右，相应的工作电压远小于4伏。显然，一般二极管由于其单向导通性和较低的工作电压限制。由此可见，所有的发光二极管芯片使用都需要额外设置的整流电路和外加电阻配合使用，因而会增加了灯具生产成本以及电路连接的复杂性。The P-N junction of the light-emitting diode chip has unidirectional conductivity: that is, it conducts in the forward direction and does not conduct in the reverse direction. For red and yellow light emitting diodes, the forward conducting voltage is about 2 volts, while for blue and green light emitting diodes, the forward conducting voltage is about 3.0 volts. When the forward voltage of the diode is higher than the conduction voltage, the current flowing through the diode will increase rapidly with the increase of the applied voltage; when the current flowing through the diode is too large, it may be burned due to the excessive heat generated by the diode itself burn. At present, the operating current of a general 1-watt blue light diode is about 350 mA, and the corresponding operating voltage is far less than 4 volts. Obviously, general diodes are limited due to their unidirectional conductivity and lower operating voltage. It can be seen that all light-emitting diode chips need an additional rectifier circuit and an external resistor to be used together, which will increase the production cost of the lamp and the complexity of the circuit connection.

此外，现有LED芯片是无法与交流电直接连接使用的，需要增加额外设施。In addition, existing LED chips cannot be directly connected to AC power, and additional facilities need to be added.

发明内容Contents of the invention

本发明设计了一种可直接连接在交流电上的LED芯片组，其解决的技术问题是（1）现有LED芯片组无法直接与交流电直接使用；（2）现有发光二极管芯片需要与专门的整流电路和外加电阻配合使用，会增加了灯具生产成本以及电路连接的复杂性。The present invention designs an LED chip set that can be directly connected to AC power, and the technical problems it solves are (1) The existing LED chip set cannot be directly used with AC power; The combined use of the rectifier circuit and the external resistor will increase the production cost of the lamp and the complexity of the circuit connection.

为了解决上述存在的技术问题，本发明采用了以下方案：In order to solve the above-mentioned technical problems, the present invention adopts the following scheme:

一种可直接连接在交流电上的LED芯片组，至少包括两枚集成电阻发光二极管芯片，所述两枚集成电阻发光二极管芯片并联在交流电正负极，每一枚集成电阻发光二极管芯片包括第一半导体电阻（R1）和第二半导体电阻（R2），在所述第一半导体电阻（R1）和所述第二半导体电阻（R2）之间串联有多个发光二极管（L1、L2、L3），所述多个发光二极管（L1、L2、L3）的PN结走向相同，根据二极管正向导通原理两枚集成电阻发光二极管芯片在交流电作用下交替发光。An LED chip set that can be directly connected to an alternating current, comprising at least two integrated resistor light emitting diode chips, the two integrated resistor light emitting diode chips are connected in parallel to the positive and negative poles of the alternating current, each integrated resistor light emitting diode chip includes a first A semiconductor resistor (R1) and a second semiconductor resistor (R2), a plurality of light-emitting diodes (L1, L2, L3) are connected in series between the first semiconductor resistor (R1) and the second semiconductor resistor (R2), The PN junctions of the plurality of light emitting diodes (L1, L2, L3) have the same direction, and the two integrated resistor light emitting diode chips alternately emit light under the action of alternating current according to the principle of diode forward conduction.

进一步，一枚集成电阻发光二极管芯片的第一半导体电阻（R1）和另一枚集成电阻发光二极管芯片的第二半导体电阻（R2）的连接端与交流电正极或负极直接连接。Further, the connecting end of the first semiconductor resistor (R1) of one integrated resistor LED chip and the second semiconductor resistor (R2) of the other integrated resistor LED chip is directly connected to the anode or cathode of the alternating current.

进一步，所述第一半导体电阻（R1）、所述第二半导体电阻（R2）以及所述多个发光二极管除了共用一衬底（1）层外分别由独立的缓冲层（2）、N型层（3）、N型分别限制层（4）、有源区结构（5）、P型分别限制层（6）、P型层（7）、P型欧姆接触层（8）以及P型金属欧姆接触层（9）由下至上组合而成；相邻两个发光二极管通过N型层（3）电极与P型金属欧姆接触层（9）电极连接实现串联；所述第一半导体电阻（R1）和所述第二半导体电阻（R2）分别都设有两个接触电极，所述第一半导体电阻（R1）或所述第二半导体电阻（R2）的一个接触电极与电源的正极或负极连接，另外一个接触电极与相邻发光二极管的N型层（3）或P型金属欧姆接触层（9）连接。Further, the first semiconductor resistor (R1), the second semiconductor resistor (R2) and the plurality of light-emitting diodes are respectively composed of an independent buffer layer (2), an N-type Layer (3), N-type respectively confinement layer (4), active region structure (5), P-type respectively confinement layer (6), P-type layer (7), P-type ohmic contact layer (8) and P-type metal The ohmic contact layer (9) is formed from bottom to top; two adjacent light-emitting diodes are connected in series through the electrodes of the N-type layer (3) and the electrodes of the P-type metal ohmic contact layer (9); the first semiconductor resistor (R1 ) and the second semiconductor resistor (R2) are respectively provided with two contact electrodes, and one contact electrode of the first semiconductor resistor (R1) or the second semiconductor resistor (R2) is connected to the positive or negative pole of the power supply , the other contact electrode is connected to the N-type layer (3) or the P-type metal ohmic contact layer (9) of the adjacent light-emitting diode.

进一步，所述第一半导体电阻（R1）、所述第二半导体电阻（R2）以及多个发光二极管的外表都包裹一层绝缘介质膜（13），但多个发光二极管的N型层（3）电极、多个发光二极管的P型金属欧姆接触层（9）电极以及所述第一半导体电阻（R1）和所述第二半导体电阻（R2）的各自两个接触电极上方的绝缘介质膜（13）都去除。Further, the first semiconductor resistor (R1), the second semiconductor resistor (R2) and the plurality of light-emitting diodes are all wrapped with a layer of insulating dielectric film (13), but the N-type layer (3) of the plurality of light-emitting diodes ) electrodes, P-type metal ohmic contact layer (9) electrodes of multiple light-emitting diodes, and the insulating dielectric film above the respective two contact electrodes of the first semiconductor resistor (R1) and the second semiconductor resistor (R2) ( 13) Both are removed.

进一步，所述第一半导体电阻（R1）的P型金属欧姆接触层（9）被P型金属欧姆接触层第一隔离缺口（17）分离成两个接触电极。Further, the P-type metal ohmic contact layer (9) of the first semiconductor resistor (R1) is separated into two contact electrodes by the first isolation gap (17) of the P-type metal ohmic contact layer.

进一步，所述第二半导体电阻（R2）P型金属欧姆接触层（9）被P型金属欧姆接触层第二隔离缺口（18）分离成两个接触电极。Further, the P-type metal ohmic contact layer (9) of the second semiconductor resistor (R2) is separated into two contact electrodes by the second isolation gap (18) of the P-type metal ohmic contact layer.

进一步，所述发光二极管为三个：第一发光二极管（L1）、第二发光二极管（L2）和第三发光二极管（L3）；其中，第一发光二极管（L1）的P型金属欧姆接触层（9）电极通过PP结电极连接金属层（162）与第一半导体电阻（R1）的右侧接触电极连接，第一发光二极管（L1）的N型层（3）电极通过第一PN结电极连接金属层（163）与第二发光二极管（L2）的P型金属欧姆接触层（9）电极连接；第二发光二极管（L2）的N型层（3）电极通过第二PN结电极连接金属层（164）与第三发光二极管（L3）的P型金属欧姆接触层（9）电极连接；第三发光二极管（L3）的N型层（3）电极通过第三PN结电极连接金属层（165）与第二半导体电阻（R2）的左侧接触电极连接。Further, there are three light-emitting diodes: the first light-emitting diode (L1), the second light-emitting diode (L2) and the third light-emitting diode (L3); wherein, the P-type metal ohmic contact layer of the first light-emitting diode (L1) (9) The electrode connects the metal layer (162) to the right contact electrode of the first semiconductor resistor (R1) through the PP junction electrode, and the N-type layer (3) electrode of the first light-emitting diode (L1) passes through the first PN junction electrode The connection metal layer (163) is connected to the electrode of the P-type metal ohmic contact layer (9) of the second light-emitting diode (L2); the electrode of the N-type layer (3) of the second light-emitting diode (L2) is connected to the metal electrode through the second PN junction electrode The layer (164) is connected to the electrode of the P-type metal ohmic contact layer (9) of the third light-emitting diode (L3); the electrode of the N-type layer (3) of the third light-emitting diode (L3) is connected to the metal layer ( 165) is connected to the left contact electrode of the second semiconductor resistor (R2).

进一步，所述绝缘介质膜（13）的厚度在150nm-450nm之间。Further, the thickness of the insulating dielectric film (13) is between 150nm and 450nm.

进一步，所述衬底（1）的材质为蓝宝石、碳化硅或GaN。Further, the material of the substrate (1) is sapphire, silicon carbide or GaN.

该可直接连接在交流电上的LED芯片组与传统发光二极管芯片制作方法相比，具有以下有益效果：Compared with the traditional light-emitting diode chip manufacturing method, the LED chipset that can be directly connected to the alternating current has the following beneficial effects:

（1）本发明由于将两颗集成电阻发光二极管芯片并联连接并且使得两者的多个发光二极管PN结走向相反，一枚集成电阻发光二极管芯片在交流电的正半周工作，另一枚集成电阻发光二极管芯片在交流电的负半周工作，实现LED芯片组可以在交流电下一直工作。(1) The present invention connects two integrated resistance light-emitting diode chips in parallel and makes the multiple light-emitting diode PN junctions of the two go in opposite directions. One integrated resistance light-emitting diode chip works in the positive half cycle of the alternating current, and the other integrated resistance light-emitting diode chip The diode chip works in the negative half cycle of the alternating current, so that the LED chipset can work continuously under the alternating current.

（2）本发明方法可以将发光二极管芯片制作成多个发光二极管以及半导体电阻，该半导体电阻直接集成在发光二极管芯片中，因而不再需要与专门的整流电路和外加电阻配合使用，大大降低了照明灯具生产成本以及电路连接的复杂性。(2) The method of the present invention can make the light-emitting diode chip into a plurality of light-emitting diodes and semiconductor resistors, and the semiconductor resistors are directly integrated in the light-emitting diode chip, so it is no longer necessary to cooperate with a special rectifier circuit and an external resistor, greatly reducing the The production cost of lighting fixtures and the complexity of circuit connections.

附图说明Description of drawings

图01：本发明中发光二极管裸芯片结构示意图；Figure 01: Schematic diagram of the structure of the light-emitting diode bare chip in the present invention;

图02：本发明集成电阻发光二极管芯片制作步骤1结构示意图；Figure 02: Schematic diagram of the structure of the integrated resistance light-emitting diodechip manufacturing step 1 of the present invention;

图03：本发明集成电阻发光二极管芯片制作步骤2结构示意图；Figure 03: Schematic diagram of the structure of the second step of manufacturing the integrated resistance light-emitting diode chip of the present invention;

图04：本发明集成电阻发光二极管芯片制作步骤3结构示意图；Figure 04: Schematic diagram of the structure ofstep 3 in the manufacture of the integrated resistor light-emitting diode chip of the present invention;

图05：本发明集成电阻发光二极管芯片制作步骤4结构示意图；Figure 05: Schematic diagram of the structure ofstep 4 in the manufacture of the integrated resistor light-emitting diode chip of the present invention;

图06：本发明集成电阻发光二极管芯片制作步骤5结构示意图；Figure 06: Schematic diagram of the structure ofstep 5 of the fabrication of the integrated resistor light-emitting diode chip of the present invention;

图07：本发明集成电阻发光二极管芯片制作步骤6结构示意图；Figure 07: Schematic diagram of the structure ofstep 6 in the manufacture of the integrated resistance light-emitting diode chip of the present invention;

图08：本发明集成电阻发光二极管芯片制作步骤7结构示意图；Figure 08: Schematic diagram of the structure ofstep 7 in the manufacture of the integrated resistor light-emitting diode chip of the present invention;

图09：本发明集成电阻发光二极管芯片制作步骤8结构示意图；Figure 09: Schematic diagram of the structure ofstep 8 in the manufacture of the integrated resistance light-emitting diode chip of the present invention;

图10：本发明集成电阻发光二极管芯片制作步骤9结构示意图；Fig. 10: Schematic diagram of the structure ofstep 9 in the manufacture of the integrated resistance light-emitting diode chip of the present invention;

图11：本发明集成电阻发光二极管芯片制作步骤10结构示意图；Figure 11: Schematic diagram of the structure of themanufacturing step 10 of the integrated resistance light-emitting diode chip of the present invention;

图12：本发明集成电阻发光二极管芯片制作步骤11结构示意图；Fig. 12: Schematic diagram of the structure ofstep 11 in the manufacture of the integrated resistor light-emitting diode chip of the present invention;

图13：本发明集成电阻发光二极管芯片制作步骤12结构示意图；Figure 13: Schematic diagram of the structure ofstep 12 in the fabrication of the integrated resistor light-emitting diode chip of the present invention;

图14：本发明集成电阻发光二极管芯片制作步骤13结构示意图；Figure 14: Schematic diagram of the structure ofstep 13 in the fabrication of the integrated resistor light-emitting diode chip of the present invention;

图15：本发明集成电阻发光二极管芯片制作步骤14结构示意图；Fig. 15: Schematic diagram of the structure ofstep 14 in the manufacture of the integrated resistance light-emitting diode chip of the present invention;

图16：本发明集成电阻发光二极管芯片制作步骤15结构示意图；Fig. 16: Schematic diagram of the structure ofstep 15 in the fabrication of the integrated resistance light-emitting diode chip of the present invention;

图17：本发明集成电阻发光二极管芯片制作步骤16结构示意图；Fig. 17: Schematic diagram of the structure ofstep 16 of manufacturing the integrated resistance light-emitting diode chip of the present invention;

图18：本发明集成电阻发光二极管芯片制作步骤17结构示意图；Fig. 18: Schematic diagram of the structure ofstep 17 of manufacturing the integrated resistance light-emitting diode chip of the present invention;

图19：本发明集成电阻发光二极管芯片制作步骤18结构示意图；Fig. 19: Schematic diagram of the structure ofstep 18 in the fabrication of the integrated resistor light-emitting diode chip of the present invention;

图20：本发明集成电阻发光二极管芯片制作步骤19结构示意图；Fig. 20: Schematic diagram of the structure of step 19 of manufacturing the integrated resistance light-emitting diode chip of the present invention;

图21：本发明集成电阻发光二极管芯片制作步骤20结构示意图；Figure 21: Schematic diagram of the structure of the manufacturing step 20 of the integrated resistance light-emitting diode chip of the present invention;

图22：本发明集成电阻发光二极管芯片制作步骤21结构示意图；Fig. 22: Schematic diagram of the structure of the manufacturing step 21 of the integrated resistance light-emitting diode chip of the present invention;

图23：本发明集成电阻发光二极管芯片制作步骤22结构示意图；Figure 23: Schematic diagram of the structure ofstep 22 in the fabrication of the integrated resistor light-emitting diode chip of the present invention;

图24：本发明可直接连接在交流电上的LED芯片组结构示意图。Fig. 24: Schematic diagram of the structure of the LED chipset that can be directly connected to the alternating current according to the present invention.

附图标记说明：Explanation of reference signs:

1—衬底；2—缓冲层；3—N型层；4—N型分别限制层；5—有源区层；6—P型分别限制层；7—P型层；8—P型欧姆接触层；9—P型金属欧姆接触层；10—第一光刻胶层；11—第二光刻胶层；12—第三光刻胶层；121—刻蚀缺口；13—绝缘介质膜；14—第四光刻胶层；15—第五光刻胶层；16—金属合金层；160—输入电极金属层；161—输出电极金属层；162—PP结电极连接金属层；163—第一PN结电极连接金属层；164—第二PN结电极连接金属层；165—第三PN结电极连接金属层；17—P型金属欧姆接触层第一隔离缺口；18—P型金属欧姆接触层第二隔离缺口；R1—第一半导体电阻；R2—第二半导体电阻；L1—第一发光二极管；L2—第二发光二极管；L3—第三发光二极管。1—substrate; 2—buffer layer; 3—N-type layer; 4—N-type separate confinement layer; 5—active region layer; 6—P-type separate confinement layer; 7—P-type layer; 8—P-type ohm Contact layer; 9—P-type metal ohmic contact layer; 10—first photoresist layer; 11—second photoresist layer; 12—third photoresist layer; 121—etching gap; 13—insulating dielectric film ; 14—the fourth photoresist layer; 15—the fifth photoresist layer; 16—metal alloy layer; 160—input electrode metal layer; 161—output electrode metal layer; 162—PP junction electrode connection metal layer; 163— The first PN junction electrode is connected to the metal layer; 164—the second PN junction electrode is connected to the metal layer; 165—the third PN junction electrode is connected to the metal layer; 17—the first isolation gap of the P-type metal ohmic contact layer; 18—P-type metal ohmic The second isolation gap of the contact layer; R1—the first semiconductor resistor; R2—the second semiconductor resistor; L1—the first light emitting diode; L2—the second light emitting diode; L3—the third light emitting diode.

具体实施方式Detailed ways

下面结合图1至图24，对本发明做进一步说明：Below in conjunction with Fig. 1 to Fig. 24, the present invention will be further described:

如图1所示，普通发光二极管芯片从下至上依次为衬底1、缓冲层2、N型层3、N型分别限制层4、有源区层5、P型分别限制层6、P型层7以及P型欧姆接触层8。衬底1是载体，一般是蓝宝石、碳化硅或GaN等材料。缓冲层2是一个过度层，在此基础上生长高质量的N, P, 量子阱等其它材料。LED由pn结构成，缓冲层2、N型层3层、N型分别限制层4，P型分别限制层6以及P型层7是为了形成制作LED所需的P和N型材料。有源区层5是LED的发光区，光的颜色由有源区的结构决定。P型欧姆接触层8是材料生长的最后一层，这一层的载流子搀杂浓度较高，目的是为制作较小的欧姆接触电阻。As shown in Figure 1, the common light-emitting diode chips aresubstrate 1,buffer layer 2, N-type layer 3, N-type confinement layer 4,active region layer 5, P-type confinement layer 6, P-type confinement layer from bottom to top.Layer 7 and P-typeohmic contact layer 8. Thesubstrate 1 is a carrier, generally made of materials such as sapphire, silicon carbide or GaN.Buffer layer 2 is a transitional layer on which high-quality N, P, quantum wells and other materials are grown. LED is composed of pn structure,buffer layer 2, N-type layer 3 layers, N-type confinement layer 4, P-type confinement layer 6 and P-type layer 7 are to form P and N-type materials required for making LED. Theactive region layer 5 is the light-emitting region of the LED, and the color of the light is determined by the structure of the active region. P-typeohmic contact layer 8 is the last layer of material growth, and the carrier doping concentration of this layer is relatively high, the purpose is to make smaller ohmic contact resistance.

一种可直接连接在交流电上的LED芯片组制作方法如下：A manufacturing method of an LED chipset that can be directly connected to an alternating current is as follows:

1、在P型欧姆接触层8表面上方形成P型金属欧姆接触层9；1. Forming a P-type metalohmic contact layer 9 above the surface of the P-typeohmic contact layer 8;

2、将发光二极管芯片分割出多个独立单元，其中在发光二极管芯片两个端部的单元成为半导体电阻形成区；2. Dividing the light emitting diode chip into multiple independent units, wherein the units at both ends of the light emitting diode chip become semiconductor resistance forming regions;

3、将其余多个独立单元形成多个发光二极管形成区；3. Forming a plurality of light-emitting diode formation regions from the remaining independent units;

4、通过绝缘介质膜13将在发光二极管芯片上形成第一半导体电阻R1、第二半导体电阻R2和多个发光二极管L1、L2、L3;4. Form the first semiconductor resistor R1, the second semiconductor resistor R2 and a plurality of light-emitting diodes L1, L2, L3 on the light-emitting diode chip through the insulatingdielectric film 13;

5、将第一半导体电阻R1、多个发光二极管以及第二半导体电阻R2的各个电极通过金属合金层16进行串联连接，即生成一枚集成电阻发光二极管芯片；5. Connect the electrodes of the first semiconductor resistor R1, a plurality of light-emitting diodes and the second semiconductor resistor R2 in series through themetal alloy layer 16 to generate an integrated resistor light-emitting diode chip;

6、使用步骤5中两枚集成电阻发光二极管芯片，将两枚集成电阻发光二极管芯片并联在交流电正负极，一枚集成电阻发光二极管芯片的第一半导体电阻R1和另一枚集成电阻发光二极管芯片的第二半导体电阻R2的连接端与交流电正极或负极直接连接，根据二极管正向导通原理两枚集成电阻发光二极管芯片在交流电作用下交替发光。6. Using the two integrated resistor LED chips instep 5, connect the two integrated resistor LED chips in parallel to the positive and negative poles of the AC, the first semiconductor resistor R1 of one integrated resistor LED chip and the other integrated resistor LED chip The connection end of the second semiconductor resistor R2 of the chip is directly connected to the anode or cathode of the alternating current, and the two integrated resistor light-emitting diode chips emit light alternately under the action of the alternating current according to the principle of diode forward conduction.

具体详细步骤如下：The detailed steps are as follows:

如图2所示，在P型欧姆接触层8表面上方形成P型金属欧姆接触层9。通过蒸镀或溅射工艺，在P型欧姆接触层8表面形成一层或多层P型金属欧姆接触层9。P型金属欧姆接触层9不是由生长形成的，而是通过蒸镀或溅射等方法形成的，目的之一是制作器件的电极，目的之二是为了封装打线用。As shown in FIG. 2 , a P-type metalohmic contact layer 9 is formed on the surface of the P-typeohmic contact layer 8 . One or more P-type metal ohmic contact layers 9 are formed on the surface of the P-typeohmic contact layer 8 by evaporation or sputtering. The P-type metalohmic contact layer 9 is not formed by growth, but by evaporation or sputtering. One of the purposes is to make the electrodes of the device, and the other is to package and wire.

如图3所示，在P型金属欧姆接触层9表面上方形成第一光刻胶层10。第一光刻胶层10涂布速度在2500-5000转/分，并对涂布温度控制90摄氏度-100摄氏度之间，在烘箱里或铁板表面烘烤，烘烤时间分别为30分钟和2分钟。As shown in FIG. 3 , afirst photoresist layer 10 is formed on the surface of the P-type metalohmic contact layer 9 . The coating speed of thefirst photoresist layer 10 is at 2500-5000 rpm, and the coating temperature is controlled between 90 degrees Celsius and 100 degrees Celsius, and it is baked in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 100 degrees Celsius respectively. 2 minutes.

如图4所示，去除部分第一光刻胶层10，保留的多块第一光刻胶层10用于制作半导体电阻形成区或发光二极管形成区。As shown in FIG. 4 , part of thefirst photoresist layer 10 is removed, and the remaining pieces of thefirst photoresist layer 10 are used to form a semiconductor resistor forming region or a light emitting diode forming region.

如图5所示，将暴露的P型材料、有源区以及部分N型材料进行去除。As shown in FIG. 5 , the exposed P-type material, active region and part of N-type material are removed.

如图6所示，去除剩下所有的第一光刻胶层10。As shown in FIG. 6, all remainingfirst photoresist layer 10 is removed.

如图7所示，对图6中所得到的发光二极管芯片表面上方形成第二光刻胶层11。第二光刻胶层11涂布速度在2500-5000转/分，并对涂布温度控制90摄氏度-100摄氏度之间，在烘箱里或铁板表面烘烤，烘烤时间分别为30分钟和2分钟。As shown in FIG. 7 , asecond photoresist layer 11 is formed above the surface of the LED chip obtained in FIG. 6 . The coating speed of thesecond photoresist layer 11 is at 2500-5000 rpm, and the coating temperature is controlled between 90 degrees Celsius and 100 degrees Celsius, and it is baked in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 100 degrees Celsius respectively. 2 minutes.

如图8所示，将半导体电阻形成区独立单元上方的第二光刻胶层11进行部分去除，形成缺口。As shown in FIG. 8 , thesecond photoresist layer 11 above the independent unit of the semiconductor resistor formation region is partially removed to form a gap.

如图9所示，对缺口下方的P型金属欧姆接触层9进行完整去除，形成P型金属欧姆接触层第一隔离缺口17和P型金属欧姆接触层第二隔离缺口18。As shown in FIG. 9 , the P-type metalohmic contact layer 9 under the gap is completely removed to form afirst isolation gap 17 of the P-type metal ohmic contact layer and asecond isolation gap 18 of the P-type metal ohmic contact layer.

如图10所示，去除所有剩余的第二光刻胶层11。As shown in FIG. 10, all remainingsecond photoresist layer 11 is removed.

如图11所示，在图10中得到的发光二极管芯片表面上方形成第三光刻胶层12。第三光刻胶层12涂布速度在2500-5000转/分，并对涂布温度控制90摄氏度-100摄氏度之间，在烘箱里或铁板表面烘烤，烘烤时间分别为30分钟和2分钟。As shown in FIG. 11 , athird photoresist layer 12 is formed on the surface of the LED chip obtained in FIG. 10 . The coating speed of thethird photoresist layer 12 is at 2500-5000 rpm, and the coating temperature is controlled between 90 degrees Celsius and 100 degrees Celsius, and it is baked in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 100 degrees Celsius respectively. 2 minutes.

如图12所示，去除部分第三光刻胶层12，保留半导体电阻形成区最上方的第三光刻胶层12，保留多个发光二极管芯片形成区最上方和右侧的第三光刻胶层12，但发光二极管芯片形成区右侧的第三光刻胶层12与另外一个的发光二极管芯片形成区或第二半导体电阻形成区存在刻蚀缺口121。As shown in Figure 12, part of thethird photoresist layer 12 is removed, thethird photoresist layer 12 on the top of the semiconductor resistance formation area is reserved, and the third photoresist layer on the top and right side of the formation area of multiple light emitting diode chips is reserved. Theadhesive layer 12, but there is anetching gap 121 between thethird photoresist layer 12 on the right side of the LED chip forming area and the other LED chip forming area or the second semiconductor resistor forming area.

如图13所示，将未覆盖第三光刻胶层12的暴露部分进行刻蚀去除所有缓冲层2和N型层3；As shown in FIG. 13, the exposed part not covered with thethird photoresist layer 12 is etched to remove all thebuffer layer 2 and the N-type layer 3;

如图14所示，去除所有剩余的第三光刻胶层12。As shown in FIG. 14, all remainingthird photoresist layer 12 is removed.

如图15所示，在图14中得到的发光二极管芯片表面上方形成绝缘介质膜13。绝缘介质膜13的厚度在150nm-450nm之间。As shown in FIG. 15 , an insulatingdielectric film 13 is formed over the surface of the light emitting diode chip obtained in FIG. 14 . The thickness of the insulatingdielectric film 13 is between 150nm-450nm.

如图16所示，在绝缘介质膜13表面上方形成第四光刻胶层14。第四光刻胶层14涂布速度在2500-5000转/分，并对涂布温度控制90摄氏度-100摄氏度之间，在烘箱里或铁板表面烘烤，烘烤时间分别为30分钟和2分钟。As shown in FIG. 16 , afourth photoresist layer 14 is formed on the surface of the insulatingdielectric film 13 . Thefourth photoresist layer 14 is coated at a speed of 2500-5000 rpm, and the coating temperature is controlled between 90 degrees Celsius and 100 degrees Celsius, and it is baked in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 100 degrees Celsius respectively. 2 minutes.

如图17所示，去除部分第四光刻胶层14在两个半导体电阻的电极形成区和多个发光二级管的电极形成区上形成的多个缺口；As shown in FIG. 17 , removing part of thefourth photoresist layer 14 forms multiple gaps formed on the electrode formation regions of the two semiconductor resistors and the electrode formation regions of the plurality of light-emitting diodes;

如图18所示，将图17中多个缺口下方的绝缘介质膜13去除。As shown in FIG. 18 , the insulatingdielectric film 13 under the multiple gaps in FIG. 17 is removed.

如图19所示，去除剩余所有的第四光刻胶层14。As shown in FIG. 19, all remainingfourth photoresist layer 14 is removed.

如图20所示，在图19中得到的发光二极管芯片表面上方形成第五光刻胶层15。第五光刻胶层15涂布速度在2500-5000转/分，并对涂布温度控制90摄氏度-100摄氏度之间，在烘箱里或铁板表面烘烤，烘烤时间分别为30分钟和2分钟。As shown in FIG. 20 , afifth photoresist layer 15 is formed on the surface of the LED chip obtained in FIG. 19 . Thefifth photoresist layer 15 is coated at a speed of 2500-5000 rpm, and the coating temperature is controlled between 90 degrees Celsius and 100 degrees Celsius. It is baked in an oven or on the surface of an iron plate. The baking time is 30 minutes and 100 degrees Celsius respectively. 2 minutes.

如图21所示，去除部分第五光刻胶层15，仅仅保留任何一个发光二级管P电极至N电极之间绝缘介质膜13上方的第五光刻胶层15、P型金属欧姆接触层第一隔离缺口17和P型金属欧姆接触层第二隔离缺口18中绝缘介质膜13上方的第五光刻胶层15、第一半导体电阻R1最左侧绝缘介质膜13上方的第五光刻胶以及第二半导体电阻R2最右侧绝缘介质膜13上方的第五光刻胶；As shown in FIG. 21, part of thefifth photoresist layer 15 is removed, and only thefifth photoresist layer 15 and the P-type metal ohmic contact on the insulatingdielectric film 13 between the P electrode and the N electrode of any light-emitting diode are reserved. Thefifth photoresist layer 15 above the insulatingdielectric film 13 in thefirst isolation gap 17 and thesecond isolation gap 18 of the P-type metal ohmic contact layer, thefifth photoresist layer 15 above the leftmost insulatingdielectric film 13 of the first semiconductor resistor R1 Resist and the fifth photoresist above the rightmost insulatingdielectric film 13 of the second semiconductor resistor R2;

如图22所示，在图21中得到的发光二极管芯片表面上方形成金属合金层16。As shown in FIG. 22 , ametal alloy layer 16 is formed over the surface of the LED chip obtained in FIG. 21 .

如图23所示，去除第五光刻胶层15及其上方的金属合金层16后，剩下的金属合金层16包括输入电极金属层160、输出电极金属层161、PP结电极连接金属层162以及多个PN结电极连接金属层163、164、165。As shown in FIG. 23, after removing thefifth photoresist layer 15 and themetal alloy layer 16 above it, the remainingmetal alloy layer 16 includes an input electrode metal layer 160, an outputelectrode metal layer 161, and a PP junction electrode connection metal layer. 162 and a plurality of PN junction electrodes are connected tometal layers 163 , 164 , 165 .

如图24所示，使用两枚图23中制造出来的集成电阻发光二极管芯片，将两枚集成电阻发光二极管芯片并联在交流电正负极，一枚集成电阻发光二极管芯片的第一半导体电阻R1和另一枚集成电阻发光二极管芯片的第二半导体电阻R2的连接端与交流电正极或负极直接连接，根据二极管正向导通原理两枚集成电阻发光二极管芯片在交流电作用下交替发光。As shown in Figure 24, using two integrated resistance light emitting diode chips manufactured in Figure 23, the two integrated resistance light emitting diode chips are connected in parallel to the positive and negative poles of the alternating current, and the first semiconductor resistor R1 of one integrated resistance light emitting diode chip and The connection end of the second semiconductor resistor R2 of the other integrated resistance light-emitting diode chip is directly connected to the positive or negative pole of the alternating current, and the two integrated resistance light-emitting diode chips emit light alternately under the action of alternating current according to the principle of diode forward conduction.

上面结合附图对本发明进行了示例性的描述，显然本发明的实现并不受上述方式的限制，只要采用了本发明的方法构思和技术方案进行的各种改进，或未经改进将本发明的构思和技术方案直接应用于其它场合的，均在本发明的保护范围内。Above, the present invention has been exemplarily described in conjunction with the accompanying drawings. Obviously, the realization of the present invention is not limited by the above-mentioned manner, as long as various improvements of the method concept and technical solutions of the present invention are adopted, or the present invention is implemented without improvement. The ideas and technical schemes directly applied to other occasions are within the protection scope of the present invention.

Claims (3)

Translated fromChinese

1.一种可直接连接在交流电上的LED芯片组，至少包括两枚集成电阻发光二极管芯片，所述两枚集成电阻发光二极管芯片并联在交流电正负极，每一枚集成电阻发光二极管芯片包括第一半导体电阻（R1）和第二半导体电阻（R2），在所述第一半导体电阻（R1）和所述第二半导体电阻（R2）之间串联有多个发光二极管（L1、L2、L3），所述多个发光二极管（L1、L2、L3）的PN结走向相同，根据二极管正向导通原理两枚集成电阻发光二极管芯片在交流电作用下交替发光；一枚集成电阻发光二极管芯片的第一半导体电阻（R1）和另一枚集成电阻发光二极管芯片的第二半导体电阻（R2）的连接端与交流电正极或负极直接连接；所述第一半导体电阻（R1）、所述第二半导体电阻（R2）以及所述多个发光二极管除了共用一衬底（1）层外分别由独立的缓冲层（2）、N型层（3）、N型分别限制层（4）、有源区结构（5）、P型分别限制层（6）、P型层（7）、P型欧姆接触层（8）以及P型金属欧姆接触层（9）由下至上组合而成；相邻两个发光二极管通过N型层（3）电极与P型金属欧姆接触层（9）电极连接实现串联；所述第一半导体电阻（R1）和所述第二半导体电阻（R2）分别都设有两个接触电极，所述第一半导体电阻（R1）或所述第二半导体电阻（R2）的一个接触电极与电源的正极或负极连接，另外一个接触电极与相邻发光二极管的N型层（3）或P型金属欧姆接触层（9）连接；所述第一半导体电阻（R1）、所述第二半导体电阻（R2）以及多个发光二极管的外表都包裹一层绝缘介质膜（13），但多个发光二极管的N型层（3）电极、多个发光二极管的P型金属欧姆接触层（9）电极以及所述第一半导体电阻（R1）和所述第二半导体电阻（R2）的各自两个接触电极上方的绝缘介质膜（13）都去除；所述第一半导体电阻（R1）的P型金属欧姆接触层（9）被P型金属欧姆接触层第一隔离缺口（17）分离成两个接触电极；所述第二半导体电阻（R2）P型金属欧姆接触层（9）被P型金属欧姆接触层第二隔离缺口（18）分离成两个接触电极；所述发光二极管为三个：第一发光二极管（L1）、第二发光二极管（L2）和第三发光二极管（L3）；其中，第一发光二极管（L1）的P型金属欧姆接触层（9）电极通过PP结电极连接金属层（162）与第一半导体电阻（R1）的右侧接触电极连接，第一发光二极管（L1）的N型层（3）电极通过第一PN结电极连接金属层（163）与第二发光二极管（L2）的P型金属欧姆接触层（9）电极连接；第二发光二极管（L2）的N型层（3）电极通过第二PN结电极连接金属层（164）与第三发光二极管（L3）的P型金属欧姆接触层（9）电极连接；第三发光二极管（L3）的N型层（3）电极通过第三PN结电极连接金属层（165）与第二半导体电阻（R2）的左侧接触电极连接；其特征在于：发光二极管芯片从下至上依次为衬底（1）、缓冲层（2）、N型层（3）、N型分别限制层（4）、有源区层（5）、P型分别限制层（6）、P型层（7）以及P型欧姆接触层（8）；在P型欧姆接触层（8）表面上方形成P型金属欧姆接触层（9），在P型金属欧姆接触层（9）表面上方形成第一光刻胶层（10），去除部分第一光刻胶层（10），保留的多块第一光刻胶层（10）用于制作半导体电阻形成区或发光二极管形成区，将暴露的P型材料、有源区以及部分N型材料进行去除，去除剩下所有的第一光刻胶层（10）；发光二极管芯片表面上方形成第二光刻胶层（11），将半导体电阻形成区独立单元上方的第二光刻胶层（11）进行部分去除，形成缺口，对缺口下方的P型金属欧姆接触层（9）进行完整去除，形成P型金属欧姆接触层第一隔离缺口（17）和P型金属欧姆接触层第二隔离缺口（18），去除所有剩余的第二光刻胶层（11）；发光二极管芯片表面上方形成第三光刻胶层（12），去除部分第三光刻胶层（12），保留半导体电阻形成区最上方的第三光刻胶层（12），保留多个发光二极管芯片形成区最上方和右侧的第三光刻胶层（12），但发光二极管芯片形成区右侧的第三光刻胶层（12）与另外一个的发光二极管芯片形成区或第二半导体电阻形成区存在刻蚀缺口（121），将未覆盖第三光刻胶层（12）的暴露部分进行刻蚀去除所有缓冲层（2）和N型层（3），去除所有剩余的第三光刻胶层（12）；发光二极管芯片表面上方形成绝缘介质膜（13），在绝缘介质膜（13）表面上方形成第四光刻胶层（14），去除部分第四光刻胶层（14）在两个半导体电阻的电极形成区和多个发光二级管的电极形成区上形成的多个缺口，将多个缺口下方的绝缘介质膜（13）去除，去除剩余所有的第四光刻胶层（14）；发光二极管芯片表面上方形成第五光刻胶层（15），去除部分第五光刻胶层（15），仅仅保留任何一个发光二级管P电极至N电极之间绝缘介质膜（13）上方的第五光刻胶层（15）、P型金属欧姆接触层第一隔离缺口17和P型金属欧姆接触层第二隔离缺口（18）中绝缘介质膜（13）上方的第五光刻胶层（15）、第一半导体电阻R1最左侧绝缘介质膜（13）上方的第五光刻胶以及第二半导体电阻R2最右侧绝缘介质膜（13）上方的第五光刻胶，发光二极管芯片表面上方形成金属合金层（16），去除第五光刻胶层（15）及其上方的金属合金层（16）后，剩下的金属合金层（16）包括输入电极金属层（160）、输出电极金属层（161）、PP结电极连接金属层（162）以及多个PN结电极连接金属层（163、164、165）。1. An LED chipset that can be directly connected to an alternating current, comprising at least two integrated resistance light emitting diode chips, the two integrated resistance light emitting diode chips are connected in parallel to the positive and negative poles of the alternating current, each integrated resistance light emitting diode chip includes A first semiconductor resistor (R1) and a second semiconductor resistor (R2), and a plurality of light-emitting diodes (L1, L2, L3) are connected in series between the first semiconductor resistor (R1) and the second semiconductor resistor (R2). ), the PN junctions of the plurality of light emitting diodes (L1, L2, L3) have the same trend, and according to the principle of diode forward conduction, two integrated resistance light emitting diode chips emit light alternately under the action of alternating current; the first integrated resistance light emitting diode chip A semiconductor resistor (R1) and the second semiconductor resistor (R2) of another integrated resistor LED chip are directly connected to the positive or negative pole of the alternating current; the first semiconductor resistor (R1), the second semiconductor resistor (R2) and the plurality of light-emitting diodes are composed of an independent buffer layer (2), an N-type layer (3), an N-type confinement layer (4), and an active region structure in addition to sharing a substrate (1) layer. (5), P-type confinement layer (6), P-type layer (7), P-type ohmic contact layer (8) and P-type metal ohmic contact layer (9) are combined from bottom to top; adjacent two light emitting The diode is connected in series through the electrode of the N-type layer (3) and the electrode of the P-type metal ohmic contact layer (9); the first semiconductor resistor (R1) and the second semiconductor resistor (R2) are respectively provided with two contacts One contact electrode of the first semiconductor resistor (R1) or the second semiconductor resistor (R2) is connected to the positive or negative pole of the power supply, and the other contact electrode is connected to the N-type layer (3) or The P-type metal ohmic contact layer (9) is connected; the outer surfaces of the first semiconductor resistor (R1), the second semiconductor resistor (R2) and the plurality of light emitting diodes are all wrapped with an insulating dielectric film (13), but more The N-type layer (3) electrodes of a plurality of light-emitting diodes, the P-type metal ohmic contact layer (9) electrodes of multiple light-emitting diodes, and the respective two of the first semiconductor resistor (R1) and the second semiconductor resistor (R2) The insulating dielectric film (13) above each contact electrode is removed; the P-type metal ohmic contact layer (9) of the first semiconductor resistor (R1) is separated into two parts by the first isolation gap (17) of the P-type metal ohmic contact layer. The second semiconductor resistance (R2) P-type metal ohmic contact layer (9) is separated into two contact electrodes by the second isolation gap (18) of the P-type metal ohmic contact layer; the light-emitting diodes are three : the first light emitting diode (L1), the second light emitting diode (L2) and the third light emitting diode (L3); wherein, the electrodes of the P-type metal ohmic contact layer (9) of the first light emitting diode (L1) are connected by PP junction electrodes The metal layer (162) is connected to the right contact electrode of the first semiconductor resistor (R1), and the electrode of the N-type layer (3) of the first light-emitting diode (L1) is connected to the first PN junction electrode. The metal layer (163) is connected to the electrode of the P-type metal ohmic contact layer (9) of the second light-emitting diode (L2); the electrode of the N-type layer (3) of the second light-emitting diode (L2) is connected to the metal electrode through the second PN junction electrode The layer (164) is connected to the electrode of the P-type metal ohmic contact layer (9) of the third light-emitting diode (L3); the electrode of the N-type layer (3) of the third light-emitting diode (L3) is connected to the metal layer ( 165) is connected to the left contact electrode of the second semiconductor resistor (R2); it is characterized in that: the light-emitting diode chip is substrate (1), buffer layer (2), N-type layer (3), N-type Respectively confinement layer (4), active region layer (5), P-type respectively confinement layer (6), P-type layer (7) and P-type ohmic contact layer (8); on the surface of P-type ohmic contact layer (8) A P-type metal ohmic contact layer (9) is formed above, and a first photoresist layer (10) is formed above the surface of the P-type metal ohmic contact layer (9), and part of the first photoresist layer (10) is removed, leaving more The first photoresist layer (10) is used to make the semiconductor resistance formation region or the light emitting diode formation region, remove the exposed P-type material, active region and part of the N-type material, and remove all the remaining first photoresist Adhesive layer (10); a second photoresist layer (11) is formed above the surface of the light-emitting diode chip, and the second photoresist layer (11) above the independent unit of the semiconductor resistance formation area is partially removed to form a gap, and the bottom of the gap is The P-type metal ohmic contact layer (9) is completely removed, forming the first isolation gap (17) of the P-type metal ohmic contact layer and the second isolation gap (18) of the P-type metal ohmic contact layer, and removing all remaining second light Resist layer (11); a third photoresist layer (12) is formed above the surface of the LED chip, part of the third photoresist layer (12) is removed, and the third photoresist layer ( 12), keep the third photoresist layer (12) on the top and right side of the multiple light emitting diode chip formation areas, but the third photoresist layer (12) on the right side of the light emitting diode chip formation area and the other light emitting There is an etching gap (121) in the diode chip formation area or the second semiconductor resistance formation area, and the exposed part not covered by the third photoresist layer (12) is etched to remove all buffer layers (2) and N-type layers (3 ), remove all remaining third photoresist layer (12); form an insulating dielectric film (13) above the surface of the light-emitting diode chip, form a fourth photoresist layer (14) above the surface of the insulating dielectric film (13), remove Part of the fourth photoresist layer (14) forms multiple gaps on the electrode formation regions of the two semiconductor resistors and the electrode formation regions of multiple light-emitting diodes, and the insulating dielectric film (13) under the multiple gaps is removed , remove all the remaining fourth photoresist layer (14); form a fifth photoresist layer (15) above the surface of the light-emitting diode chip, remove part of the fifth photoresist layer (15), and only keep any light-emitting secondary The fifth photoresist layer (15) above the insulating dielectric film (13) between the P electrode and the N electrode of the tube , the fifth photoresist layer (15) above the insulating dielectric film (13) in the first isolation gap 17 of the P-type metal ohmic contact layer and the second isolation gap (18) of the P-type metal ohmic contact layer, the first semiconductor resistor R1 The fifth photoresist above the leftmost insulating dielectric film (13) and the fifth photoresist above the rightmost insulating dielectric film (13) of the second semiconductor resistor R2 form a metal alloy layer (16) above the surface of the light emitting diode chip ), after removing the fifth photoresist layer (15) and the metal alloy layer (16) above it, the remaining metal alloy layer (16) includes the input electrode metal layer (160), the output electrode metal layer (161), The PP junction electrode connection metal layer (162) and a plurality of PN junction electrode connection metal layers (163, 164, 165).2.根据权利要求1所述可直接连接在交流电上的LED芯片组，其特征在于：所述绝缘介质膜（13）的厚度在150nm-450nm之间。2. The LED chipset directly connected to the alternating current according to claim 1, characterized in that: the thickness of the insulating dielectric film (13) is between 150nm and 450nm.3.根据权利要求2所述可直接连接在交流电上的LED芯片组，其特征在于：所述衬底（1）的材质为蓝宝石、碳化硅或GaN。3. The LED chipset that can be directly connected to an alternating current according to claim 2, characterized in that: the material of the substrate (1) is sapphire, silicon carbide or GaN.

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