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CN102412052A - Circuit model of radio frequency inductor - Google Patents

Circuit model of radio frequency inductor
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Publication number
CN102412052A
CN102412052ACN2011102438854ACN201110243885ACN102412052ACN 102412052 ACN102412052 ACN 102412052ACN 2011102438854 ACN2011102438854 ACN 2011102438854ACN 201110243885 ACN201110243885 ACN 201110243885ACN 102412052 ACN102412052 ACN 102412052A
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China
Prior art keywords
inductance
radio frequency
circuit
circuit module
current branch
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Application number
CN2011102438854A
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CN102412052B (en
Inventor
蔡描
李平梁
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Hua Hong NEC Electronics Co Ltd
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Publication of CN102412052BpublicationCriticalpatent/CN102412052B/en
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Abstract

The invention discloses a circuit model of a radio frequency inductor, which comprises a PI type circuit, wherein a low-frequency inductor in the PI type circuit is connected with two sub-circuit modules in series, and the two sub-circuit modules are used for simulating the skin effect of a radio frequency inductor metal coil; the circuit model structure of the second sub-circuit module is completely the same as that of the first sub-circuit module; the element parameter value of the second sub-circuit module is correlated with the element parameter value of the first sub-circuit module; the main branch current is changed by different element parameter values to simulate the influence of current proximity effect at high frequency. According to the invention, two sub-circuit modules for describing the skin effect of the radio frequency inductor are connected in series, so that the influence of the current proximity effect on the radio frequency inductance characteristic can be effectively simulated, the physical property of the inductance model is improved, and the high-frequency fitting precision of the inductance model is improved.

Description

The circuit model of radio frequency inductive
Technical field
The present invention relates to a kind of circuit model, be specifically related to a kind of circuit model of radio frequency inductive.
Background technology
The radio frequency inductive device is the critical elements of RF CMOS or BiCMOS integrated circuit, is widely used in the various RF circuit modules such as voltage controlled oscillator and low noise amplifier.
Because electric current is tending towards the Surface runoff at metallic resistance when high frequency, thereby has increased the high-frequency electrical resistance, has reduced the quality factor of inductance, this phenomenon is referred to as the skin effect of resistance.Have this characteristic of skin effect for resistance, the solution that proposes from the model angle is a lot, and common method is parallel connection one or more current branch at the D.C. resistance two ends, and this current branch comprises an inductance and a resistance series connection.
The circuit model structure of existing radio frequency inductive is as shown in Figure 1, parallel connection one or more current branch at D.C. resistance Rmain two ends, and this current branch comprises the inductance Rs and the resistance Ls of mutual series connection.
This circuit model has mainly been considered the influence that the skin effect of resistance when high frequency brought inductance characteristic.Wherein Ls1, Ls2 and Rs1, Rs2 are the element of simulation skin effect.
But,, need to adopt the wire coil of the more number of turns in order to obtain the radio frequency inductive of big sense value.And the inductance of many circles, particularly the differential inductance of many circles can receive the influence of electric current approach effect.
The principle of electric current approach effect is: two current branch of facing mutually during high frequency can interact, and influence electric current and DISTRIBUTION OF MAGNETIC FIELD.As shown in Figure 2, the formed downward the action of a magnetic field of the electric current of outer ring wire coil is in the wire coil of inside, and the wire coil generation eddy current at inner ring causes the current density of inner ring to change.Inner ring receives the influence of eddy current, causes near inboard and unequal near the current density of Outboard Sections.In some cases, the eddy current value can balance out most of forward current, and the effective length of inductance is reduced, and effective sense value of radio frequency inductive is reduced, and the quality factor of inductance are reduced.Show that according to statistics because the influence of electric current approach effect, the inductance that width is big is compared with the little inductance of width, the quality factor of inductance descend faster after the number of turns increases.
The circuit model of existing radio frequency inductive is for the not simulation well of electric current approach effect.
Summary of the invention
Technical problem to be solved by this invention provides a kind of circuit model of radio frequency inductive, its analog current approach effect influence that inductive is brought exactly.
For solving the problems of the technologies described above, the technical solution of the circuit model of radio frequency inductive of the present invention is:
Comprise PI type circuit, low frequency inductance L main and two sub-circuit modules in the said PI type circuit are one another in series, and two sub-circuit modules are used for the skin effect of analog radio frequency inductance wire coil; The first electronic circuit module comprises D.C. resistance R11, D.C. resistance R11The first current branch of parallel connection in two ends, this current branch comprises the first inductance L s1 and the first skin resistance Rs1 of mutual series connection; The two ends of skin resistance Rs1 on said current branch are current branch of parallel connection again, and this current branch comprises another inductance and another skin resistance of mutual series connection; The circuit model structure of the second electronic circuit module and the first electronic circuit module are identical;
The device parameter values of the second electronic circuit module is relevant mutually with the device parameter values of the first electronic circuit module; Raw parameter value R, Rs, the Ls of the device parameter values of the first electronic circuit module when not considering the electric current approach effect multiply by alpha and obtains, and raw parameter value R, Rs, the Ls of the device parameter values of the second electronic circuit module when not considering the electric current approach effect multiply by (1-α) and obtain; Change main branch current through different device parameter values, with the influence of electric current approach effect under the simulation high frequency;
Wherein, the span of alpha is 0<α<1.
Said PI type circuit is two PI type circuit or single PI type circuit.
Parallelly connected again current branch at the two ends of said first skin resistance (Rs1), this current branch comprises second inductance (Ls2) and second skin resistance (Rs2) of mutual series connection; Parallelly connected again current branch at the two ends of said second skin resistance (Rs2), this current branch comprises the 3rd inductance (Ls3) and the 3rd skin resistance (Rs3) of mutual series connection; Parallelly connected again current branch at the two ends of said the 3rd skin resistance (Rs3), this current branch comprises the 4th inductance (Ls4) and the 4th skin resistance (Rs4) of mutual series connection.
The size of said alpha is adjusted according to the size of electric current approach effect, with the electric current approach effect of the different sizes of match.
Little to can ignore the time when the influence of electric current approach effect, said α value is 0.5.
The technique effect that the present invention can reach is:
The present invention is cascaded two electronic circuit modules of describing the radio frequency inductive skin effect, and the circuit form of two modules is in full accord, and just the coefficient of component parameters is different.
The present invention's analog current approach effect influence that the radio frequency inductance characteristic is brought effectively improves the inductor models physical property, thereby improves its high frequency fitting precision.
The present invention can describe the skin effect of resistance and the common influence of electric current approach effect.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the circuit model structural representation of prior art radio frequency inductive;
Fig. 2 is that the electric current approach effect influences sketch map in radio frequency inductive;
Fig. 3 is the sketch map of the circuit model of radio frequency inductive of the present invention.
Description of reference numerals among the figure:
Lmain is the low frequency inductance, and R is a D.C. resistance,
Ls is an inductance, and Rs is a skin resistance.
Embodiment
As shown in Figure 3, the circuit model of radio frequency inductive of the present invention comprises PI type circuit, low frequency inductance L main in the PI type circuit and two sub-circuit modules 1., 2. be one another in series, two sub-circuit modules are used for the skin effect of analog radio frequency inductance wire coil;
1. the first electronic circuit module comprises D.C. resistance R11, D.C. resistance R11The first current branch of parallel connection in two ends, this current branch comprises the inductance L s1 and the skin resistance Rs1 of mutual series connection; Parallelly connected again current branch at the two ends of skin resistance Rs1, this current branch comprises the inductance L s2 and the skin resistance Rs2 of mutual series connection; By that analogy, parallelly connected again current branch at the two ends of skin resistance Rs2, this current branch comprises the inductance L s3 and the skin resistance Rs3 of mutual series connection;
The second electronic circuit module circuit model structure and the firstelectronic circuit module 2. is 1. identical, but its device parameter values is different;
The device parameter values of two sub-circuit modules is relevant mutually; Raw parameter value R, Rs, the Ls of first electronic circuit moduledevice parameter values 1. when not considering the electric current approach effect multiply by alpha and obtains, and raw parameter value R, Rs, the Ls of second electronic circuit moduledevice parameter values 2. when not considering the electric current approach effect multiply by (1-α) and obtain.Change of the influence of main branch current through different device parameter values with electric current approach effect under the simulation high frequency.
Wherein, the span of alpha is 0<α<1.
1. the first electronic circuit module representes the current density of wire coil near the inboard, and 2. the second electronic circuit module representes the current density of wire coil near the outside, the firstelectronic circuit module 1. with the secondelectronic circuit module 2. under both actings in conjunction, form new electric current.
According to the size of electric current approach effect, can adjust the size of alpha, thus the electric current approach effect of the different sizes of match; Little to can ignore the time when the influence of electric current approach effect, the α value is 0.5, this moment two D.C. resistance R11* αWith R11* (1-α)Equate the element inductance R of the simulation skin effect parallelly connected with itS* αWith resistance LS* αAlso respectively with inductance RS* (1-α)With resistance LS* (1-α)Equate.
Be illustrated in figure 3 as two PI type circuit; Each low frequency inductance L main wherein connects respectively two and simulates the electronic circuit module of skin effect; Wherein Lmain1 connect the firstelectronic circuit module 1. with the second electronic circuit module 2.; Lmain3 connect the 3rd electronic circuit module 3. with the 4th electronic circuit module 4., form the precircuit that two PI patterns are intended differential inductances.
Can certainly be single PI type circuit, low frequency inductance L main is connected with the electronic circuit module of two simulation skin effects.
Two D.C. resistance R among the present invention11* α, R11* (1-α)Sum is the initial value R when not considering the electric current approach effect11, promptly be equivalent to D.C. resistance Rmain of the prior art, to compare with existing radio frequency inductive model, circuit model of the present invention is corresponding with physical effect, has stronger physical property.

Claims (5)

CN 2011102438852011-08-242011-08-24Circuit model of radio frequency inductorActiveCN102412052B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN 201110243885CN102412052B (en)2011-08-242011-08-24Circuit model of radio frequency inductor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN 201110243885CN102412052B (en)2011-08-242011-08-24Circuit model of radio frequency inductor

Publications (2)

Publication NumberPublication Date
CN102412052Atrue CN102412052A (en)2012-04-11
CN102412052B CN102412052B (en)2013-06-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN106709200A (en)*2017-01-052017-05-24西南交通大学Lumped parameter radio frequency inductance model and optimization design method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20070176704A1 (en)*2005-07-192007-08-02Lctank LlcReduced eddy current loss in lc tank circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20070176704A1 (en)*2005-07-192007-08-02Lctank LlcReduced eddy current loss in lc tank circuits

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
翁妍: "基于RF CMOS工艺的平面螺旋差分电感的参数化等效电路模型", 《中国优秀硕士学位论文全文数据库信息科技辑》, vol. 2008, no. 6, 15 June 2008 (2008-06-15)*
菅端端: "CMOS平面螺旋电感的设计及其应用", 《中国优秀硕士学位论文全文数据库工程科技II辑》, vol. 2009, no. 4, 15 April 2009 (2009-04-15)*

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN106709200A (en)*2017-01-052017-05-24西南交通大学Lumped parameter radio frequency inductance model and optimization design method thereof

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Owner name:SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING

Free format text:FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI

Effective date:20131230

C41Transfer of patent application or patent right or utility model
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Free format text:CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI

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Effective date of registration:20131230

Address after:201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399

Patentee after:Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Address before:201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge

Patentee before:Shanghai Huahong NEC Electronics Co., Ltd.


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