CN102320554A - Process for preparing nano seam by virtue of template alignment impressing - Google Patents

Abstract

Translated fromChinese

一种纳米缝的模板对准压印制备工艺，先进行刚性衬底、柔性材料以及刚性材料三层结构的制备，然后采用模板进行对准压印，根据不同的纳米缝结构制备相应的压印模板，采用对准工艺使模板在需要产生纳米缝的位置处施加外在压力进行压印，最后利用第二平板二次对准施压，使断裂错位的薄膜材料上的纳米缝对齐，进一步减小纳米缝的间距，采用纳米缝的模板对准压印，导致柔性材料层变形，顶层刚性材料薄膜断裂，形成单个纳米缝或是纳米缝阵列，可以有效的突破常规纳米缝制备工艺中复杂的工艺流程以及昂贵的加工设备，能够低廉地制备纳米缝结构，可以广泛地应用在SED显示器以及分子器件等方面。

A nano-slit template alignment and imprint preparation process, firstly prepare a three-layer structure of rigid substrate, flexible material and rigid material, then use templates for alignment and imprinting, and prepare corresponding imprints according to different nano-slit structures The template uses an alignment process to apply external pressure on the template to imprint at the position where nano-slits need to be generated, and finally uses the second plate to align and apply pressure to align the nano-slits on the fractured and dislocated film materials, further reducing the The pitch of small nanoslits is aligned and imprinted with the template of nanoslits, resulting in the deformation of the flexible material layer and the rupture of the rigid material film on the top layer, forming a single nanoslit or nanoslit array, which can effectively break through the complex process of conventional nanoslit preparation process. With advanced technological process and expensive processing equipment, nano-slit structures can be prepared cheaply, and can be widely used in SED displays and molecular devices.

Description

Translated fromChinese

一种纳米缝的模板对准压印制备工艺A template alignment imprint preparation process for nano-slits

技术领域technical field

本发明属于微纳制造技术领域，具体涉及一种纳米缝的模板对准压印制备工艺。The invention belongs to the technical field of micro-nano manufacturing, and in particular relates to a nano-slit template alignment imprint preparation process.

背景技术Background technique

纳米缝由于在量子尺度特殊的电子效应，在表面传导电子发射显示器SED，分子开关，分子晶体管等分子器件方面具有重要的应用。而纳米缝的制备工艺正是约束SED以及分子器件大规模应用及快速发展的重要因素。目前，常规的制备纳米缝的主要方法有扫描隧道显微镜法、微加工法、电迁移法以及电化学法等。其中的扫描隧道显微镜法、电迁移法以及电化学法需要复杂的控制系统来监测压力或是电导率的变化以控制纳米缝的形成；微加工法涉及到电子束光刻以及离子束刻蚀，加工设备精密昂贵，操作复杂。总体而言，常规纳米缝制备方法需要昂贵的工作设备或是复杂的工艺流程，极大地限制了纳米缝的制备效率。Due to the special electronic effects at the quantum scale, nanoslits have important applications in molecular devices such as surface conduction electron emission displays (SEDs), molecular switches, and molecular transistors. The preparation process of nano-slits is an important factor restricting the large-scale application and rapid development of SEDs and molecular devices. At present, the main conventional methods for preparing nanoslits include scanning tunneling microscopy, microfabrication, electromigration, and electrochemical methods. Among them, scanning tunneling microscopy, electromigration, and electrochemical methods require complex control systems to monitor changes in pressure or conductivity to control the formation of nanoslits; microfabrication methods involve electron beam lithography and ion beam etching, The processing equipment is precise and expensive, and the operation is complicated. Generally speaking, conventional nanoslit preparation methods require expensive working equipment or complicated process flow, which greatly limits the preparation efficiency of nanoslits.

发明内容Contents of the invention

为了克服上述现有技术的缺点，本发明的目的在于提供一种纳米缝的模板对准压印制备工艺，不需要昂贵的工作设备或是复杂的工艺流程，能够在刚性材料薄膜上制备纳米缝。In order to overcome the shortcomings of the above-mentioned prior art, the object of the present invention is to provide a nano-slit template alignment imprinting preparation process, which does not require expensive working equipment or complicated process flow, and can prepare nano-slits on rigid material films .

为达到上述目的，本发明采取的技术方案为：In order to achieve the above object, the technical scheme that the present invention takes is:

一种纳米缝的模板对准压印制备工艺，包括以下步骤：A nano-slit template alignment imprint preparation process, comprising the following steps:

第一步，进行刚性衬底、柔性材料以及刚性材料三层结构的制备，刚性衬底位于底层，柔性材料位于中间层，刚性材料位于顶层，刚性衬底为熔融玻璃或金属板，柔性材料为SU8胶或环氧树脂，刚性材料为厚度是纳米级别的金属材料或半导体材料，根据单一纳米缝制备以及纳米缝阵列结构制备，顶层的刚性材料层可分为均一层和图形化层，均一层的顶层刚性材料薄膜是一个整体层，不存在图形化结构，一次压印形成一个纳米缝；图形化层的顶层刚性薄膜材料采用光刻、刻蚀工艺形成一定的图形结构，一次压印形成纳米缝阵列，The first step is to prepare a three-layer structure of rigid substrate, flexible material and rigid material. The rigid substrate is located in the bottom layer, the flexible material is located in the middle layer, and the rigid material is located in the top layer. The rigid substrate is molten glass or metal plate, and the flexible material is SU8 glue or epoxy resin, the rigid material is a metal material or semiconductor material with a thickness of nanometer level. According to the preparation of a single nano-slit and a nano-slit array structure, the rigid material layer on the top layer can be divided into a uniform layer and a patterned layer. Uniform The rigid material film on the top layer of the layer is an integral layer without a patterned structure, and a nano-slit is formed by one imprint; the rigid film material on the top layer of the patterned layer adopts photolithography and etching processes to form a certain pattern structure, and is formed by one imprint. nanoslit array,

第二步，采用模板进行对准压印，根据不同的纳米缝结构制备相应的压印模板，采用对准工艺使模板在需要产生纳米缝的位置处施加外在压力进行压印，单一纳米缝工艺仅需要第一平板，利用对准工艺保证平板边缘与产生纳米缝的位置处相平行，施压压印，即可在预期位置得到单一的纳米缝结构；纳米缝阵列结构制备中，压印模板为图形化模板，模板凸起与欲产生纳米缝位置对准，施压压印，可以得到阵列纳米缝结构，In the second step, the template is used for alignment and imprinting, and corresponding imprinting templates are prepared according to different nanoslit structures. The alignment process is used to apply external pressure on the template to imprint at the position where nanoslits need to be generated. A single nanoslit The process only requires the first plate, and the alignment process is used to ensure that the edge of the plate is parallel to the position where the nano-slit is generated, and a single nano-slit structure can be obtained at the expected position by applying pressure and imprinting; in the preparation of the nano-slit array structure, the imprinting The template is a patterned template, and the protrusions of the template are aligned with the positions of the nano-slits to be generated, and the pressure is applied to imprint, and the nano-slit array structure can be obtained.

第三步，利用第二平板二次对准施压，利用第二平板对整个顶层刚性材料薄膜纳米缝结构图形区施加压力，使断裂错位的薄膜材料上的纳米缝对齐，进一步减小纳米缝的间距。The third step is to use the second flat plate to apply pressure for secondary alignment, and use the second flat plate to apply pressure to the nano-slit structure pattern area of the entire top rigid material film, so that the nano-slits on the fractured and dislocated film materials are aligned, and the nano-slits are further reduced Pitch.

由于本发明采用纳米缝的模板对准压印，导致柔性材料层变形，顶层刚性材料薄膜断裂，形成单个纳米缝或是纳米缝阵列，可以有效的突破常规纳米缝制备工艺中复杂的工艺流程以及昂贵的加工设备，能够低廉地制备纳米缝结构，可以广泛地应用在SED显示器以及分子器件等方面。Since the present invention adopts the template alignment and imprinting of nano-slits, the flexible material layer is deformed, and the rigid material film on the top layer is broken to form a single nano-slit or a nano-slit array, which can effectively break through the complex process flow in the conventional nano-slit preparation process As well as expensive processing equipment, the nano-slit structure can be prepared cheaply, and can be widely used in SED displays and molecular devices.

附图说明：Description of drawings:

图1为本发明刚性衬底、柔性材料以及刚性材料三层结构的示意图。Fig. 1 is a schematic diagram of a three-layer structure of a rigid substrate, a flexible material and a rigid material in the present invention.

图2为本发明顶部刚性材料层图形化的三层结构的示意图。FIG. 2 is a schematic diagram of a three-layer structure in which the top rigid material layer is patterned according to the present invention.

图3为本发明采用第一平板在与产生单一纳米缝位置对准压印的示意图。FIG. 3 is a schematic diagram of the present invention using the first flat plate to be aligned and imprinted at the position where a single nanoslit is generated.

图4为本发明采用图形化模板对准压印的示意图。FIG. 4 is a schematic diagram of alignment imprinting using a patterned template in the present invention.

图5为本发明图形化模板对准压印得到的纳米缝阵列结构示意图。FIG. 5 is a schematic diagram of the nanoslit array structure obtained by patterned template alignment imprinting according to the present invention.

图6为本发明采用第二平板对整个图形化的结构区二次施压的示意图。FIG. 6 is a schematic diagram of the present invention using a second flat plate to exert secondary pressure on the entire patterned structure region.

图7为本发明图形化错位纳米缝对齐得到的纳米缝结构示意图。FIG. 7 is a schematic diagram of a nanoslit structure obtained by aligning patterned dislocation nanoslits according to the present invention.

具体实施方式Detailed ways

下面结合附图对本发明详细描述。The present invention will be described in detail below in conjunction with the accompanying drawings.

一种纳米缝的模板对准压印制备工艺，包括以下步骤：A nano-slit template alignment imprint preparation process, comprising the following steps:

第一步，进行刚性衬底1、柔性材料2以及刚性材料3三层结构的制备，刚性衬底1位于底层，柔性材料2位于中间层，刚性材料3位于顶层，刚性衬底1为熔融玻璃或金属板，柔性材料2为SU8胶或环氧树脂，刚性材料3为厚度是纳米级别的金属材料或是半导体材料，根据单一纳米缝制备以及阵列纳米缝结构制备，顶层的刚性材料层可分为均一层和图形化层，均一层的顶层刚性材料薄膜是一个整体层，不存在图形化结构，一次压印形成一个纳米缝；图形化层的顶层刚性薄膜材料采用光刻、刻蚀工艺形成一定的图形结构，一次压印形成纳米缝阵列，The first step is to prepare a three-layer structure ofrigid substrate 1,flexible material 2, andrigid material 3.Rigid substrate 1 is located on the bottom layer,flexible material 2 is located on the middle layer,rigid material 3 is located on the top layer, andrigid substrate 1 is molten glass. Or a metal plate, theflexible material 2 is SU8 glue or epoxy resin, and therigid material 3 is a metal material or a semiconductor material with a thickness of nanometer level. According to the preparation of a single nano-slit and an array of nano-slit structures, the rigid material layer on the top layer can be It is divided into a uniform layer and a patterned layer. The top rigid material film of the uniform layer is an integral layer without a patterned structure, and a nano-slit is formed by one imprint; the top rigid film material of the patterned layer adopts photolithography and etching process A certain pattern structure is formed, and a nano-slit array is formed by one imprinting.

下面举例说明均一层三层结构的详细制备过程：选择熔融玻璃作为刚性衬底1，在其上旋涂一层柔性材料2，柔性材料2为SU8胶，然后采用溅射或是蒸镀工艺制备一层纳米级别的刚性材料3，刚性材料3为金属铬层，如图1所示；The following example illustrates the detailed preparation process of a uniform three-layer structure: select molten glass as therigid substrate 1, spin-coat a layer offlexible material 2 on it, and theflexible material 2 is SU8 glue, and then prepare it by sputtering or evaporation A layer of nano-levelrigid material 3, therigid material 3 is a metal chromium layer, as shown in Figure 1;

图形化三层结构的详细制备过程：在均一层三层结构基础上，进一步采用光刻、刻蚀工艺，在金属铬层上加工出相应的周期性阵列结构，如图2所示，The detailed preparation process of the patterned three-layer structure: on the basis of the uniform layer three-layer structure, photolithography and etching processes are further used to process the corresponding periodic array structure on the metal chromium layer, as shown in Figure 2.

第二步，采用模板进行对准压印，根据不同的纳米缝结构制备相应的压印模板，采用对准工艺使模板在需要产生纳米缝的位置处施加外在压力进行压印，单一纳米缝工艺仅需要第一平板4，利用对准工艺保证第一平板4边缘与产生纳米缝的位置处相平行，施压压印，即可在预期位置令柔性材料2变形，刚性材料3变形断裂错位，得到单一的纳米缝结构，如图3所示；纳米缝阵列结构制备中，压印模板为图形化模板5，其凸起与欲产生纳米缝位置对准，施压压印，刚性材料3受压变形错位断裂，可以得到阵列纳米缝结构，如图4所示；此时得到的纳米缝结构的特征尺寸为w1，如图5所示，In the second step, the template is used for alignment and imprinting, and corresponding imprinting templates are prepared according to different nanoslit structures. The alignment process is used to apply external pressure on the template to imprint at the position where nanoslits need to be generated. A single nanoslit The process only requires the firstflat plate 4, and the alignment process is used to ensure that the edge of the firstflat plate 4 is parallel to the position where the nano-slit is generated. Pressing and imprinting can deform theflexible material 2 at the expected position, and deform and fracture therigid material 3. , to obtain a single nano-slit structure, as shown in Figure 3; in the preparation of the nano-slit array structure, the imprint template is a patterned template 5, and its protrusions are aligned with the positions of the nano-slits to be produced, and pressure is applied for imprinting, and therigid material 3 The nanoslit array structure can be obtained by compressive deformation and dislocation fracture, as shown in Figure 4; the characteristic size of the nanoslit structure obtained at this time is w1, as shown in Figure 5,

第三步，利用第二平板6二次对准施压，利用第二平板6对整个顶层刚性材料薄膜纳米缝结构图形区施加压力，使断裂错位的薄膜材料上的纳米缝对齐，进一步减小纳米缝的间距，如图6所示；此时形成的纳米缝结构特征尺寸为w2，如图7所示，特征尺寸w2小于特征尺寸w1。The third step is to use the second flat plate 6 to align and apply pressure for the second time, and use the second flat plate 6 to apply pressure to the nano-slit structure pattern area of the entire top rigid material film, so that the nano-slits on the fractured and dislocated film materials are aligned to further reduce The spacing of the nanoslits is shown in FIG. 6; the characteristic dimension of the nanoslit structure formed at this time is w2, as shown in FIG. 7, the characteristic dimension w2 is smaller than the characteristic dimension w1.

本发明充分利用了柔性材料与刚性材料的刚度不同，利用对准压印实现刚性薄膜材料的断裂，以此来实现单个纳米缝或是纳米缝阵列的制备，同时，采取第二平板二次压印，进一步减小纳米缝的间距，此种工艺方法避免了传统纳米缝制备工艺中的复杂流程以及昂贵的加工设备，操作简便易行，无需额外的探测系统，一次对准压印可实现单个纳米缝或是纳米缝阵列的制备。The present invention makes full use of the difference in rigidity between the flexible material and the rigid material, and realizes the fracture of the rigid film material by using alignment embossing, so as to realize the preparation of a single nano-slit or a nano-slit array. Printing, further reducing the spacing of nano-slits, this method avoids the complicated process and expensive processing equipment in the traditional nano-slit preparation process, and is easy to operate, without additional detection system, one-time alignment and imprinting can realize a single Fabrication of nanoslits or nanoslit arrays.

Claims (1)

Translated fromChinese

1.一种纳米缝的模板对准压印制备工艺，其特征在于，包括以下步骤：1. A template alignment imprint preparation process for nano-slits, characterized in that, comprising the following steps:第一步，进行刚性衬底、柔性材料以及刚性材料三层结构的制备，刚性衬底位于底层，柔性材料位于中间层，刚性材料位于顶层，刚性衬底为熔融玻璃或金属板，柔性材料为SU8胶或环氧树脂，刚性材料为厚度是纳米级别的金属材料或半导体材料，根据单一纳米缝制备以及纳米缝阵列结构制备，顶层的刚性材料层可分为均一层和图形化层，均一层的顶层刚性材料薄膜是一个整体层，不存在图形化结构，一次压印形成一个纳米缝；图形化层的顶层刚性薄膜材料采用光刻、刻蚀工艺形成一定的图形结构，一次压印形成纳米缝阵列，The first step is to prepare a three-layer structure of rigid substrate, flexible material and rigid material. The rigid substrate is located in the bottom layer, the flexible material is located in the middle layer, and the rigid material is located in the top layer. The rigid substrate is molten glass or metal plate, and the flexible material is SU8 glue or epoxy resin, the rigid material is a metal material or semiconductor material with a thickness of nanometer level. According to the preparation of a single nano-slit and a nano-slit array structure, the rigid material layer on the top layer can be divided into a uniform layer and a patterned layer. Uniform The rigid material film on the top layer of the layer is an integral layer without a patterned structure, and a nano-slit is formed by one imprint; the rigid film material on the top layer of the patterned layer adopts photolithography and etching processes to form a certain pattern structure, and is formed by one imprint. nanoslit array,第二步，采用模板进行对准压印，根据不同的纳米缝结构制备相应的压印模板，采用对准工艺使模板在需要产生纳米缝的位置处施加外在压力进行压印，单一纳米缝工艺仅需要第一平板，利用对准工艺保证平板边缘与产生纳米缝的位置处相平行，施压压印，即可在预期位置得到单一的纳米缝结构；纳米缝阵列结构制备中，压印模板为图形化模板，模板凸起与欲产生纳米缝位置对准，施压压印，可以得到阵列纳米缝结构，In the second step, the template is used for alignment and imprinting, and corresponding imprinting templates are prepared according to different nanoslit structures. The alignment process is used to apply external pressure on the template to imprint at the position where nanoslits need to be generated. A single nanoslit The process only requires the first plate, and the alignment process is used to ensure that the edge of the plate is parallel to the position where the nano-slit is generated, and a single nano-slit structure can be obtained at the expected position by applying pressure and imprinting; in the preparation of the nano-slit array structure, the imprinting The template is a patterned template, and the protrusions of the template are aligned with the positions of the nano-slits to be produced, and pressure is applied to imprint to obtain an arrayed nano-slit structure.第三步，利用第二平板二次对准施压，利用第二平板对整个顶层刚性材料薄膜纳米缝结构图形区施加压力，使断裂错位的薄膜材料上的纳米缝对齐，进一步减小纳米缝的间距。The third step is to use the second flat plate to apply pressure for secondary alignment, and use the second flat plate to apply pressure to the nano-slit structure pattern area of the entire top rigid material film, so that the nano-slits on the fractured and dislocated film materials are aligned, and the nano-slits are further reduced Pitch.

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