CN102183875B

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Info

Publication number: CN102183875B
Application number: CN201110118347A
Authority: CN
Inventors: 陈沁�; 史晓华
Original assignee: SUZHOU GUANGDUO MICRO NANO-DEVICE Co Ltd
Current assignee: Suzhou Guangduo Micro Nano Device Co ltd
Priority date: 2011-05-09
Filing date: 2011-05-09
Publication date: 2012-10-03
Anticipated expiration: 2031-05-09
Also published as: CN102183875A

Abstract

The invention discloses a roller-type ultraviolet ray soft stamping method, and the method comprises the following steps: (1) manufacturing a hard stamping die by using a micromachining technology; (2) manufacturing a soft stamping die by reprinting the hard stamping die; (3) coating a stamping gel on the surface of a substrate; (4) linearly rolling the soft stamping die by using the roller, stamping a stamping pattern on the soft stamping die on the stamping gel on the surface of the substrate; (5) fully exposing the stamping gel by using the ultraviolet ray; (6) peeling the stamping gel from the soft stamping die after the stamping gel is completely cured. By combining the advantages of the ultraviolet stamping, the soft stamping and the roller-type stamping, the uniformity problem of the normal hard die stamping in a large-area pattern conversion is solved, and the influence of the bent substrate and irregular surface is reduced; the uniform stamping of a large-size sample wafer can be realized without high temperature and high pressure and an expensive laser and optical apparatus; and the whole process is simple, the stamping time is short and the controllability is high.

Description

Roller type ultraviolet ray soft impression method

Technical field

The invention belongs to micro-nano element manufacturing technical field, be specifically related to a kind of nano-imprinting method.

Background technology

Micro-nano device making technics, near rise during the last ten years along with the optoelectronic applications field, communication field, the development need in biological detection field and the new and high technology that is born.Promptly at semiconductor, on metal and other the various materials, according to application need, produce size in micron order or nano level structure, the characteristic of this structure bond material itself has unique application.The main technique flow process of micro-nano element manufacturing comprises that electron beam writes platemaking technology, and ultraviolet light is write platemaking technology, gas ions etching technique, metal evaporation technology etc.

Nanometer embossing is an important technology in the micro-nano device making technics, and nanometer embossing is taken the lead in proposing in nineteen ninety-five by Stephen Y Chou professor the earliest, and this is the brand-new figure transfer technology of a kind of difference and conventional lithographic techniques.Being defined as of nanometer embossing: do not use light or irradiation that photoresist sensitization is shaped, but directly on silicon substrate or other substrate, utilize physical mechanism structure nano-scale figure, compare with conventional lithographic techniques, its advantage is:

1) do not rely on optical exposure, resolution is high;

2) do not need the expensive laser instrument and the optical system of sophisticated, cost is low;

The figure conversion that 3) can realize walking abreast;

4) one-shot forming of 3 D complex structure.

Existing nanometer embossing mainly contains three kinds: hot press printing technology, ultraviolet stamping technique and little contact nanometer stamping technique.Wherein, because also there is inefficient problem at present in intrinsic heating and cooling process and the high-pressure process of hot press printing technology, has suitable technical difficulty in the practicality; And thereby ultraviolet stamping technique is to make impression glue behind ultraviolet lighting, can solidify the nanometer embossing of realizing the room temperature impression through in impression glue, mixing photoactive substance; The desired pressure of its technology also reduces greatly; Therefore ultraviolet stamping technique is a kind of more promising nano graph switch technology; It is optimized and improves, have significant marketable value.

Summary of the invention

In view of this, the invention provides a kind of roller type ultraviolet ray soft impression method, can realize the even impression of large scale print; Whole technological process is simple, does not have the HTHP process, does not need expensive laser instrument and optical device; The impression time is short, and controllability is high.

Roller type ultraviolet ray soft impression method of the present invention may further comprise the steps:

1) uses Micrometer-Nanometer Processing Technology and make hard making ide;

2) utilize hard making ide to turn over to scribe and make soft making ide;

3) apply impression glue at substrate surface;

4) utilize the soft making ide of the linear roll extrusion of roller, the coining pattern on the soft making ide is impressed on the impression glue of substrate surface;

5) use ultraviolet light that impression glue is fully made public;

6) after the impression glue full solidification, peel off soft making ide.

Further, in the said step 1), said Micrometer-Nanometer Processing Technology is electron beam exposure and dry etching.

Further, in the said step 1), the concrete steps of the hard making ide of said making are:

A. on hard template, apply electron beam adhesive;

B. the coining pattern according to design carries out electron beam exposure to electron beam adhesive;

C. coining pattern on the electron gain bundle glue develops;

D. be that mask utilizes dry etching to carry out the etching of hard template with the electron beam adhesive;

E. remove residual electrons bundle glue and accomplish the making of hard making ide.

Further, said electron beam adhesive is ZEP520A or PMMA.

Further, said hard template is a silicon wafer.

Further, said hard template is a quartz plate, and in said steps A, evaporation or deposit conductive layer on electron beam adhesive.

Further, said step 2) in, the hard making ide of said utilization turns over to be scribed the concrete steps of making soft making ide and is:

A. there is rotation on the one side of coining pattern to apply the PDMS solution of high elastic modulus at hard making ide;

B. the PDMS solution to high elastic modulus carries out heat curing on hot plate;

C. at the PDMS solution of the PDMS of high elastic modulus surface-coated low elastic modulus;

D. the PDMS solution to low elastic modulus carries out heat curing on hot plate;

E. the double-deck mould of the PDMS that solidifies is stripped down from hard making ide, obtain soft making ide.

Further, said impression glue is LR8765, Amonil series or OG 146.

Further, said backing material is quartz, silicon, sapphire, gallium arsenide, indium gallium arsenic, gallium nitride or various metal.

Beneficial effect of the present invention is: the present invention has combined the advantage of ultraviolet impression, soft impression and roller type impression, has overcome common die and has been stamped in homogeneity question in the large-area graphs conversion, has reduced the influence of substrate bending and surface irregularity; Can realize the even impression of large scale print; Whole technological process is simple, does not have the HTHP process, does not need expensive laser instrument and optical device; The impression time is short, and controllability is high.

Description of drawings

In order to make the object of the invention, technical scheme and advantage clearer, will combine accompanying drawing that the present invention is made further detailed description below, wherein:

Fig. 1 is for making the process flow diagram of hard making ide among the present invention;

Fig. 2 is for making the process flow diagram of soft making ide among the present invention;

Fig. 3 is the process flow diagram of the soft impression of roller type ultraviolet ray among the present invention;

Fig. 4 is for utilizing method of the present invention imprint result SEM figure on four inches silicon chips.

Embodiment

Below will carry out detailed description to the preferred embodiments of the present invention with reference to accompanying drawing.

Thereby the ultraviolet ray stamping technique is to make impression glue behind ultraviolet lighting, can solidify the nanometer embossing of realizing room temperature through in impression glue, mixing photoactive substance, and its technological process does not have the HTHP process, and its desired pressure is low.Soft stamping technique is compared with common die impression; Its advantage is that mold materials has certain elasticity; Can be good at adapting to flatness tolerance and depth of parallelism error problem between mould and the substrate; Reduce the influence of substrate bending and surface irregularity, can realize the even impression of large scale print.The roller type impression is because the continuity of technology self is fit to large area imprinting very much, and its line contact performance has guaranteed that also impression glue is to the high compactedness of figure and relatively little pressure demand.

Roller type ultraviolet ray soft impression method of the present invention has combined the advantage of ultraviolet impression, soft impression and roller type impression, may further comprise the steps:

1) uses Micrometer-Nanometer Processing Technology and make hard making ide

In the present embodiment, exposure of applying electronic bundle and dry etching are made hard making ide, and concrete steps are as shown in Figure 1:

A. on hard template 1, apply electron beam adhesive 2 (like ZEP520A or PMMA etc.); Said hard template is silicon wafer or quartz plate etc.; If hard template is a quartz plate, then need evaporation or deposit conductive layer (10～20nm gold or aluminium etc.) on electron beam adhesive in addition;

B. the coining pattern according to design carries out electron beam exposure 3 to electron beam adhesive 2;

C. coining pattern on the electron gain bundle glue 2 develops;

D. be that mask utilizes dry etching to carry out the etching of hard template 1 with electron beam adhesive 2;

E. remove residual electrons bundle glue 2 and accomplish the making of hard makingide 4.

Like the deep erosion of need hard template, can consider metal or silicon dioxide as hard mask, need before step D, add the wet method or the dry etching of hard mask in the advance deposit of row metal or silicon dioxide of steps A like this.Certainly, hard making ide is not limited to the exposure of applying electronic bundle and dry etching is made, and can also use other Micrometer-Nanometer Processing Technology and make, as: cover lithography, laser direct-writing technology, interference light exposure technique and electroplating technology etc.

2) utilize hard making ide to turn over to scribe and make soft making ide

In the present embodiment, the concrete steps of making soft making ide are as shown in Figure 2:

A.hard making ide 4 have rotation on the one side of coining pattern apply high elastic modulus PDMS (dimethyl silicone polymer, polydimethylsiloxane)solution 5;

B. thePDMS solution 5 to high elastic modulus carries out heat curing on hot plate;

C. at thePDMS solution 6 of the PDMS of high elastic modulus surface-coated low elastic modulus;

D. thePDMS solution 6 to low elastic modulus carries out heat curing on hot plate;

E. the double-deck mould of the PDMS that solidifies is stripped down from hard makingide 4, obtainsoft making ide 7.

Can before step a, carry out surface treatment, like plasma treatment to hard making ide.Certainly, can also adopt injection moulding to duplicate to wait other method to turn over to scribe and make soft making ide from hard making ide.

3) atsubstrate 8 surface-coatedimpressions glue 9, as among Fig. 3 1. shown in; Said backing material is quartz, silicon, sapphire, gallium arsenide, indium gallium arsenic, gallium nitride or various metal; Said impression glue is LR8765, Amonil series or OG 146 etc.

4) utilize thesoft making ide 7 ofroller 10 linear roll extrusion, the coining pattern on thesoft making ide 7 be impressed on theimpression glue 9 onsubstrate 8 surface, as among Fig. 3 2. shown in.

5) use 11 pairs of impressions of ultravioletlight glue 9 fully to make public, as among Fig. 3 3. shown in.

6) afterimpression glue 9 full solidification, peel offsoft making ide 7, as among Fig. 3 4. shown in.

The present invention can realize the even impression of large scale print, and is as shown in Figure 4, on four inches silicon chips, evenly impresses out the triangular crystal lattice photon crystal structure in 450nm cycle.

Explanation is at last; Above embodiment is only unrestricted in order to technical scheme of the present invention to be described; Although through invention has been described with reference to the preferred embodiments of the present invention; But those of ordinary skill in the art should be appreciated that and can make various changes to it in form with on the details, and the spirit and scope of the present invention that do not depart from appended claims and limited.

Claims

1. roller type ultraviolet ray soft impression method is characterized in that: may further comprise the steps:

1) uses Micrometer-Nanometer Processing Technology and make hard making ide;

2) utilize hard making ide to turn over to scribe and make soft making ide;

3) apply impression glue at substrate surface;

5) use ultraviolet light that impression glue is fully made public;

6) after the impression glue full solidification, peel off soft making ide;

Said step 2) in, the hard making ide of said utilization turns over to be scribed the concrete steps of making soft making ide and is:

2. roller type ultraviolet ray soft impression method according to claim 1, it is characterized in that: in the said step 1), said Micrometer-Nanometer Processing Technology is electron beam exposure and dry etching.

3. roller type ultraviolet ray soft impression method according to claim 2, it is characterized in that: in the said step 1), the concrete steps of the hard making ide of said making are:

A. on hard template, apply electron beam adhesive;

C. coining pattern on the electron gain bundle glue develops;

4. roller type ultraviolet ray soft impression method according to claim 3, it is characterized in that: said electron beam adhesive is ZEP520A or PMMA.

5. roller type ultraviolet ray soft impression method according to claim 3, it is characterized in that: said hard template is a silicon wafer.

6. roller type ultraviolet ray soft impression method according to claim 3, it is characterized in that: said hard template is a quartz plate, and in said steps A, evaporation or deposit conductive layer on electron beam adhesive.

7. according to any described roller type ultraviolet ray soft impression method of claim 1 to 6, it is characterized in that: said impression glue is LR8765, Amonil series or OG 146.

8. according to any described roller type ultraviolet ray soft impression method of claim 1 to 6, it is characterized in that: said backing material is quartz, silicon, sapphire, gallium arsenide, indium gallium arsenic, gallium nitride or various metal.