CN102169943A - Light-emitting diode (LED) with indium tin oxide (ITO)/zinc oxide based composite transparent electrode and preparation method of LED - Google Patents

Abstract

Translated fromChinese

本发明涉及一种ITO/氧化锌基复合透明电极发光二极管及其制作工艺。本发光二极管包括：在蓝宝石衬底上依次有缓冲层、本征层、n型氮化镓、量子阱、p型氮化镓和ITO/氧化锌基复合电流扩展层、n型金属电极(PAD）连接n型氮化镓，p型金属电极（PAD）连接ITO/氧化锌复合透明电流扩展层。其制作方法是：缓冲层、本征层、n型氮化镓、量子阱、p型氮化镓在MOCVD中依次生长完毕；ITO/氧化锌复合电流扩展层是用电子束蒸镀、磁控溅射依次将ITO薄膜、氧化锌薄膜沉积在p型氮化镓表面；用干法刻蚀暴露出n型氮化镓，退火后利用热蒸发生长金属电极。芯片尺寸为1mm×1mm，此种复合透明电极改善了p-GaN与电极层之间的接触，提高了LED芯片的光提取效率，提高了LED芯片的可靠性。

The invention relates to an ITO/zinc oxide-based composite transparent electrode light-emitting diode and a manufacturing process thereof. The light-emitting diode includes: a buffer layer, an intrinsic layer, n-type gallium nitride, a quantum well, a p-type gallium nitride and an ITO/zinc oxide-based composite current spreading layer, and an n-type metal electrode (PAD) on a sapphire substrate in sequence. ) is connected to the n-type gallium nitride, and the p-type metal electrode (PAD) is connected to the ITO/zinc oxide composite transparent current spreading layer. The production method is: buffer layer, intrinsic layer, n-type gallium nitride, quantum well, p-type gallium nitride are grown sequentially in MOCVD; ITO/zinc oxide composite current spreading layer is deposited by electron beam evaporation, magnetron ITO film and zinc oxide film are deposited on the surface of p-type GaN by sputtering sequentially; n-type GaN is exposed by dry etching, and metal electrodes are grown by thermal evaporation after annealing. The size of the chip is 1mm×1mm. This composite transparent electrode improves the contact between p-GaN and the electrode layer, improves the light extraction efficiency of the LED chip, and improves the reliability of the LED chip.

Description

Translated fromChinese

ITO/氧化锌基复合透明电极发光二极管及其制备方法ITO/zinc oxide-based composite transparent electrode light-emitting diode and preparation method thereof

技术领域technical field

本发明涉及一种发光二极管芯片及其制备方法，特别是一种ITO/氧化锌基复合透明电极发光二极管及其制作方法。The invention relates to a light-emitting diode chip and a preparation method thereof, in particular to an ITO/zinc oxide-based composite transparent electrode light-emitting diode and a preparation method thereof.

背景技术Background technique

理论上LED的发光效能可以高达200lm/W以上，而现在的白光LED则只有100lm/W左右，与节能型荧光灯相比还有一定差距；而且其价格与传统光源相比也有很大的劣势。提高LED的发光效率主要有两种途径:1）提高LED芯片的内量子效率；2）提高LED芯片的外量子效率。目前，超高亮度LED的内量子发光效率已经有非常大的改善，最高已经达到80%，进一步改善的空间不大。因此提高LED芯片的外量子效率是提高LED总发光效率的关键。而传统结构的GaNg基LED由于全反射和吸收等原因，光提取效率只有百分之几，提高空间很大。同时LED芯片发热也影响着大功率LED的质量和寿命。目前采用的提高LED外量子效率的方法主要有：透明衬底技术、金属膜反射技术、表面微结构技术、倒装芯片技术、芯片键合技术、激光剥离技术等。Theoretically, the luminous efficiency of LED can be as high as 200lm/W or more, but the current white LED is only about 100lm/W, which is still far behind energy-saving fluorescent lamps; and its price is also at a great disadvantage compared with traditional light sources. There are two main ways to improve the luminous efficiency of LEDs: 1) Improve the internal quantum efficiency of LED chips; 2) Improve the external quantum efficiency of LED chips. At present, the internal quantum luminous efficiency of ultra-high-brightness LEDs has been greatly improved, reaching a maximum of 80%, and there is little room for further improvement. Therefore, improving the external quantum efficiency of LED chips is the key to improving the total luminous efficiency of LEDs. However, due to total reflection and absorption of GaNg-based LEDs with traditional structures, the light extraction efficiency is only a few percent, and there is a lot of room for improvement. At the same time, the heating of LED chips also affects the quality and life of high-power LEDs. The methods currently used to improve the external quantum efficiency of LEDs mainly include: transparent substrate technology, metal film reflection technology, surface microstructure technology, flip chip technology, chip bonding technology, laser lift-off technology, etc.

特别是由于p-GaN欧姆接触的阻抗一直难以降低，GaN基LED在工作时很大一部分电压会落在p-GaN欧姆接触的界面上，这也会导致在p-GaN欧姆接触界面上产生大量的热量，从而引起器件失效。目前改善欧姆接触的主要有表面预处理技术、退火技术、采用异质结和超晶格结构技术、重掺杂技术等。而Ni/Au基金属化和ITO透明导电薄膜是其中比较成熟的技术。Especially since the impedance of the p-GaN ohmic contact has been difficult to reduce, a large part of the voltage of the GaN-based LED will fall on the interface of the p-GaN ohmic contact during operation, which will also cause a large amount of voltage to be generated on the p-GaN ohmic contact interface. heat, causing device failure. At present, there are mainly surface pretreatment technology, annealing technology, heterojunction and superlattice structure technology, and heavy doping technology to improve ohmic contact. Ni/Au-based metallization and ITO transparent conductive film are relatively mature technologies.

为了降低p-GaN的接触电阻和使电流扩散均匀，p-GaN厚度较薄，一般小于0.2微米，同时p-GaN电极面积较大。电极层对光的遮挡和吸收是影响外量子效率的一个重要因素。因此，实现低欧姆接触阻抗的p-GaN透明电极，对提高LED的质量、使用寿命和发光效率，促使LED在照明领域中的应用，有重要意义。In order to reduce the contact resistance of p-GaN and make the current spread evenly, the thickness of p-GaN is relatively thin, generally less than 0.2 microns, and the area of p-GaN electrodes is relatively large. The shading and absorption of light by the electrode layer is an important factor affecting the external quantum efficiency. Therefore, realizing p-GaN transparent electrodes with low ohmic contact resistance is of great significance for improving the quality, service life and luminous efficiency of LEDs, and promoting the application of LEDs in the lighting field.

发明内容Contents of the invention

本发明的目的在于针对已有技术存在的缺陷，提供一种ITO/氧化锌基复合透明电极发光二极管芯片及其制造方法，本发光二极管芯片提高了大功率发光二极管的出光效率，增加p型半导体层电流扩散的均匀性。The object of the present invention is to aim at the defects existing in the prior art, and provide an ITO/zinc oxide-based composite transparent electrode light-emitting diode chip and a manufacturing method thereof. The light-emitting diode chip improves the light extraction efficiency of high-power light-emitting diodes and increases the Uniformity of layer current spreading.

为达到上述目的，本发明的构思是：针对当前LED存在的铟资源紧缺、铟的有毒性、工艺复杂等问题，提高采用透过率高、掺杂导电性好、资源丰富的氧化锌做为电流扩展层，为了氧化锌电流扩展与p型氮化镓表面形成良好的欧姆接触，在p型氮化镓表面溅射氧化锌薄膜前先蒸镀一层ITO薄膜，同时通过设计特定形状的p型金属电极极大的提高了p型半导体层的电流扩展层的电流扩散均匀性，从而提高LED光效和可靠性。In order to achieve the above-mentioned purpose, the idea of the present invention is to improve the use of zinc oxide with high transmittance, good doping conductivity, and abundant resources in view of the current shortage of indium resources, toxicity of indium, and complicated processes in LEDs. The current expansion layer, in order to form a good ohmic contact with the surface of p-type gallium nitride in order to expand the current of zinc oxide, evaporate a layer of ITO film before sputtering zinc oxide film on the surface of p-type gallium nitride, and at the same time, by designing a specific shape p The type metal electrode greatly improves the current diffusion uniformity of the current spreading layer of the p-type semiconductor layer, thereby improving the light efficiency and reliability of the LED.

根据上述的发明构思，本发明采用下述技术方案：According to above-mentioned inventive design, the present invention adopts following technical scheme:

一种ITO/氧化锌基复合透明电极发光二极管，包括：蓝宝石衬底、缓冲层、本征层、n型氮化镓、量子阱、p型氮化镓、透明电极，n型金属电极连接n型氮化镓、p型金属电极连接透明电极,其中缓冲层、本征层、n型氮化镓、量子阱、p型氮化镓是在MOCVD中依次生长完毕；所述透明电极是ITO/氧化锌基透明导电薄膜，其中ITO透明导电薄膜的材质是Sn₂O₃:In₂O₃=1:9的铟锡氧化物，氧化锌基透明导电薄膜的材质是ZnO:Ga或ZnO:Al或ZnO:In；所述n型金属电极是金属复合电极，材质是Ti/Al或Cr/Pt/Au；所述p型金属电极是金属复合电极，材质是Ni/Au或Cr/Pt/Au。An ITO/zinc oxide-based composite transparent electrode light-emitting diode, including: sapphire substrate, buffer layer, intrinsic layer, n-type gallium nitride, quantum well, p-type gallium nitride, transparent electrode, n-type metal electrode connected to n Type gallium nitride and p-type metal electrodes are connected to transparent electrodes, wherein the buffer layer, intrinsic layer, n-type gallium nitride, quantum wells, and p-type gallium nitride are grown sequentially in MOCVD; the transparent electrodes are ITO/ Zinc oxide-based transparent conductive film, wherein the material of ITO transparent conductive film is indium tin oxide of Sn₂ O₃ :In₂ O₃ =1:9, and the material of zinc oxide-based transparent conductive film is ZnO:Ga or ZnO:Al or ZnO:In; the n-type metal electrode is a metal composite electrode made of Ti/Al or Cr/Pt/Au; the p-type metal electrode is a metal composite electrode made of Ni/Au or Cr/Pt/Au .

上述的p型金属电极具有特殊形状: 为正十字架形，此种形状p型金属电极(9)使得电流扩散更均匀，提高LED芯片的可靠性。The above-mentioned p-type metal electrode has a special shape: it is in the shape of a positive cross, and this shape of the p-type metal electrode (9) makes the current spread more uniform and improves the reliability of the LED chip.

一种制造ITO/氧化锌基复合透明电极发光二极管的制作方法，其工艺步骤如下：A method for manufacturing an ITO/zinc oxide-based composite transparent electrode light-emitting diode, the process steps of which are as follows:

a.       用MOCVD的方法在衬底上依次缓冲层、本征层、n型氮化镓、量子阱、p型氮化镓；a. Use MOCVD method to sequentially build buffer layer, intrinsic layer, n-type gallium nitride, quantum well, p-type gallium nitride on the substrate;

b.      对外延片进行镁激活退火处理；b. Perform magnesium activation annealing treatment on the epitaxial wafer;

c.       使用化学试剂对外延片进行表面处理，其化学试剂是KOH或者HCl或者王水；c. Use chemical reagents for surface treatment of epitaxial wafers, the chemical reagents are KOH or HCl or aqua regia;

d.      通过电子束蒸发或磁控溅射和磁控溅射分别沉积ITO透明导电薄膜和氧化锌透明导电薄膜,形成ITO/氧化锌基复合电极；d. Deposit ITO transparent conductive film and zinc oxide transparent conductive film by electron beam evaporation or magnetron sputtering and magnetron sputtering to form ITO/zinc oxide based composite electrode;

e.       用湿法腐蚀的方法刻蚀出所设计的氧化锌透明导电薄膜图形；e. Etch the designed zinc oxide transparent conductive film pattern by wet etching;

f.        通过氩离子刻蚀或ICP干法刻蚀将n型氮化镓暴露出来，制备出所需芯片结构；f. Expose the n-type gallium nitride by argon ion etching or ICP dry etching to prepare the required chip structure;

g.       对外延片进行退火处理，一方面降低ITO薄膜层与氮化镓表面层以及ITO薄膜层和氧化锌基薄膜层以及之间的接触电阻，一方面修复刻蚀损伤；g. Annealing the epitaxial wafer, on the one hand, reduces the contact resistance between the ITO film layer and the gallium nitride surface layer, as well as the ITO film layer and the zinc oxide-based film layer, and repairs the etching damage on the one hand;

h.       通过热蒸发或电子束蒸发的方法沉积n型金属电极和p型金属电极h. Deposit n-type metal electrodes and p-type metal electrodes by thermal evaporation or electron beam evaporation

i.         再次退火处理，进行金属电极的合金化；i. Another annealing treatment for alloying of metal electrodes;

j.         分割外延片。j. Split epitaxial wafers.

上述的ITO/氧化锌基复合透明电极是依次利用电子束蒸镀或者磁控溅射的方法将ITO透明薄膜蒸镀在p型氮化镓表面，再利用磁控溅射的方法将氧化锌透明薄膜溅射在ITO薄膜表面，形成ITO/氧化锌复合透明电极。The above-mentioned ITO/zinc oxide-based composite transparent electrode uses electron beam evaporation or magnetron sputtering to evaporate the ITO transparent film on the surface of p-type gallium nitride in sequence, and then utilizes the method of magnetron sputtering to make the zinc oxide transparent The film is sputtered on the surface of the ITO film to form an ITO/zinc oxide composite transparent electrode.

利用氩离子或ICP干法刻蚀将n型氮化镓暴露出来，退火处理后利用热蒸发等薄膜沉积方法生长金属电极。芯片的尺寸为1mm*1mm，为了辅助ITO/氧化锌进行更好的电流扩散，设计了一种正十字p型金属电极，ITO/氧化锌透明电极改善了p型氮化镓表面与透明电极层之间的接触电阻，提高了LED的光提取效率，而此种形状的p型金属电极是的电流扩散更均匀，从而提高了LED芯片的可靠性。The n-type gallium nitride is exposed by argon ion or ICP dry etching, and metal electrodes are grown by thin film deposition methods such as thermal evaporation after annealing. The size of the chip is 1mm*1mm. In order to assist ITO/zinc oxide for better current diffusion, a positive cross p-type metal electrode is designed. The ITO/zinc oxide transparent electrode improves the surface of p-type gallium nitride and the transparent electrode layer The contact resistance between them improves the light extraction efficiency of the LED, and the p-type metal electrode of this shape makes the current spread more uniform, thereby improving the reliability of the LED chip.

本发明的ITO/氧化锌基复合透明电极发光二极管与传统的镍金电极和掺锡氧化铟电极以及纯氧化锌基电极相比有显而易见的优势：透过率较高，降低了透明电极和p型氮化镓表面的接触电阻，形成更好的欧姆接触，制备工艺简单，成本低廉，p型半导体层电流扩散更均匀。效率的提高、可靠性的提高和成本的降低都将推动LED照明的步伐。Compared with the traditional nickel-gold electrode, tin-doped indium oxide electrode and pure zinc oxide-based electrode, the ITO/zinc oxide-based composite transparent electrode light-emitting diode of the present invention has obvious advantages: the transmittance is higher, and the transparent electrode and p The contact resistance of the p-type gallium nitride surface forms a better ohmic contact, the preparation process is simple, the cost is low, and the current diffusion of the p-type semiconductor layer is more uniform. The improvement of efficiency, the improvement of reliability and the reduction of cost will all promote the pace of LED lighting.

附图说明Description of drawings

图1是本发明的未沉积金属的电极的LED芯片结构图，其中(a)为主视图，(b)为俯视图；Fig. 1 is the structure diagram of the LED chip of the electrode of the present invention without depositing metal, wherein (a) is a front view, and (b) is a top view;

图2是本发明p型电极形状，其中(a)为主视图，(b)为俯视图。Fig. 2 is the p-type electrode shape of the present invention, wherein (a) is a front view, and (b) is a top view.

具体实施方式Detailed ways

本发明的优选实例结合附图说明如下：Preferred examples of the present invention are described as follows in conjunction with accompanying drawings:

实施例一：参见图1和图2,本ITO/氧化锌基透明电极发光二极管包括：在蓝宝石衬底1上依次有缓冲层2、本征层3、n型氮化镓4、量子阱5、p型氮化镓6和透明电极7，并有n型金属电极(PAD)8连接n型氮化镓4，p型金属电极(PAD)9连接透明电极7。其中缓冲层2、本征层3、n型氮化镓4、量子阱5、p型氮化镓6是在MOCVD中依次生长完成的；所述的透明电极7是ITO/氧化锌复合透明电极，其中ITO薄膜的材质是是Sn₂O₃:In₂O₃=1:9的铟锡氧化物，氧化锌基透明导电薄膜的材质是ZnO:Ga或ZnO:Al或ZnO:In；所述的n型金属电极(8)是金属复合电极，材质是Ti/Al或Cr/Pt/Au；所属的p型金属电极(9)是金属复合电极，材质是Ni/Au或Cr/Pt/Au。Embodiment 1: Referring to Fig. 1 and Fig. 2, the present ITO/zinc oxide-based transparent electrode light-emitting diode comprises: abuffer layer 2, an intrinsic layer 3, n-type gallium nitride 4, and a quantum well 5 are sequentially arranged on a sapphire substrate 1 , p-type gallium nitride 6 and atransparent electrode 7, and an n-type metal electrode (PAD) 8 is connected to the n-type gallium nitride 4, and a p-type metal electrode (PAD) 9 is connected to thetransparent electrode 7. Thebuffer layer 2, the intrinsic layer 3, the n-type gallium nitride 4, the quantum well 5, and the p-type gallium nitride 6 are sequentially grown in MOCVD; thetransparent electrode 7 is an ITO/zinc oxide composite transparent electrode , wherein the material of the ITO film is indium tin oxide of Sn₂ O₃ :In₂ O₃ =1:9, and the material of the zinc oxide-based transparent conductive film is ZnO:Ga or ZnO:Al or ZnO:In; The n-type metal electrode (8) is a metal composite electrode, and the material is Ti/Al or Cr/Pt/Au; the p-type metal electrode (9) is a metal composite electrode, and the material is Ni/Au or Cr/Pt/Au .

实施例二：本实施例与与实施例一基本相同，特别之处是：p型电极的特殊形状：正十字架形，此种形状的p型金属电极9使得电流扩散更均匀，提高了LED芯片的可靠性。Embodiment 2: This embodiment is basically the same as Embodiment 1. The special feature is: the special shape of the p-type electrode: a positive cross shape. The p-type metal electrode 9 of this shape makes the current spread more uniform and improves the LED chip. reliability.

实施例三：本透明电极发光二极管芯片制造方法如下：首先，用MOCVD的方法在衬底上依次缓冲层2、本征层3、n型氮化镓4、量子阱5、p型氮化镓6；紧接着对外延片进行镁激活退火处理；然后使用KOH或者HCl或者王水等化学试剂对外延片进行表面处理，通过电子束蒸镀的方法沉积ITO透明导电薄膜，再通过射频磁控溅射氧化锌透明导电薄膜形成了ITO/氧化锌基复合透明电极7，用湿法腐蚀的方法，将复合透明电极腐蚀出所需图形，再通过离子刻蚀或者ICP刻蚀将n型氮化镓暴露出来，并进行退火处理；通过热蒸发或电子束蒸发的方法沉积n型金属电极（PAD）8和p型金属电极(PAD)9；最后，进行金属电极的合金化退火处理并分割外延片。Embodiment three: the manufacturing method of the transparent electrode light-emitting diode chip is as follows: first,buffer layer 2, intrinsic layer 3, n-type gallium nitride 4, quantum well 5, p-type gallium nitride are successively formed on the substrate byMOCVD method 6; followed by magnesium activation annealing treatment on the epitaxial wafer; then use chemical reagents such as KOH or HCl or aqua regia to carry out surface treatment on the epitaxial wafer, deposit ITO transparent conductive film by electron beam evaporation, and then pass radio frequency magnetron sputtering The ITO/ZnO-based compositetransparent electrode 7 is formed by irradiating the zinc oxide transparent conductive film. The composite transparent electrode is etched into the required pattern by wet etching, and then the n-type gallium nitride is etched by ion etching or ICP etching. Exposed and annealed; deposit n-type metal electrodes (PAD) 8 and p-type metal electrodes (PAD) 9 by thermal evaporation or electron beam evaporation; finally, perform alloying annealing of metal electrodes and split the epitaxial wafer .

实施例四：本实施与实施例三基本相同，特别之处在于：所述的ITO/氧化锌基复合电极是通过直流磁控溅射沉积ITO薄膜，再通过射频磁控溅射沉积氧化锌基薄膜形成ITO/氧化锌基复合透明电极7，用湿法腐蚀的方法，将复合透明电极腐蚀出所需图形，再通过离子刻蚀将n型氮化镓暴露出来，并进行退火处理；通过热蒸发或电子束蒸发的方法沉积n型金属电极（PAD）8和p型金属电极(PAD)9；最后，进行金属电极的合金化退火处理并分割外延片。Embodiment 4: This implementation is basically the same as Embodiment 3. The special feature is that the ITO/zinc oxide-based composite electrode is deposited by DC magnetron sputtering ITO film, and then deposited by radio frequency magnetron sputtering. Form the ITO/zinc oxide-based compositetransparent electrode 7 with a thin film, etch the composite transparent electrode to form the desired pattern by wet etching, then expose the n-type gallium nitride by ion etching, and perform annealing treatment; The n-type metal electrode (PAD) 8 and the p-type metal electrode (PAD) 9 are deposited by evaporation or electron beam evaporation; finally, an alloying annealing treatment of the metal electrode is performed and the epitaxial wafer is divided.

实施例五：本实施与实施例四基本相同，特别之处在于：所述的ITO/氧化锌基复合电极是通过直流磁控溅射沉积ITO薄膜，再通过射频磁控溅射沉积氧化锌基薄膜形成ITO/氧化锌基复合透明电极7后，直接通过离子刻蚀或者ICP刻蚀将n型氮化镓暴露出来，使得p型氮化镓呈现出所想要的图案。芯片尺寸为1mm×1mm，为辅助氧化锌进行更好的电流扩散，设计出此种特殊的形状的p型金属电极。氧化锌透明电极提高了LED芯片光提取效率，此种形状的p型电极使得电流扩散更均匀，从而提高了LED芯片的可靠性。Embodiment 5: This implementation is basically the same asEmbodiment 4. The special feature is that the ITO/zinc oxide-based composite electrode is deposited by DC magnetron sputtering ITO film, and then deposited by radio frequency magnetron sputtering. After the ITO/zinc oxide-based compositetransparent electrode 7 is formed on the thin film, the n-type gallium nitride is directly exposed by ion etching or ICP etching, so that the p-type gallium nitride presents a desired pattern. The chip size is 1mm×1mm. In order to assist zinc oxide in better current diffusion, this special shape p-type metal electrode is designed. The zinc oxide transparent electrode improves the light extraction efficiency of the LED chip, and the p-type electrode of this shape makes the current spread more uniform, thereby improving the reliability of the LED chip.

Claims (6)

Translated fromChinese

1.一种ITO/氧化锌基复合透明电极发光二极管，包括：蓝宝石衬底(1)、缓冲层(2)、本征层(3)、n型氮化镓(4)、量子阱(5)、p型氮化镓(6)、透明电极(7)，n型金属电极(8)连接n型氮化镓(4)、p型金属电极(9)连接透明电极(7),其中缓冲层(2)、本征层(3)、n型氮化镓(4)、量子阱(5)、p型氮化镓(6)是在MOCVD中依次生长完毕；其特征在于，所述透明电极(7)是ITO/氧化锌基透明导电薄膜，其中ITO透明导电薄膜的材质是Sn₂O₃:In₂O₃=1:9的铟锡氧化物，氧化锌基透明导电薄膜的材质是ZnO:Ga或ZnO:Al或ZnO:In；所述n型金属电极(8)是金属复合电极，材质是Ti/Al或Cr/Pt/Au；所述p型金属电极(9)是金属复合电极，材质是Ni/Au或Cr/Pt/Au。1. A kind of ITO/zinc oxide base composite transparent electrode light emitting diode, comprising: sapphire substrate (1), buffer layer (2), intrinsic layer (3), n-type gallium nitride (4), quantum well (5 ), p-type gallium nitride (6), transparent electrode (7), n-type metal electrode (8) connected to n-type gallium nitride (4), p-type metal electrode (9) connected to transparent electrode (7), wherein the buffer Layer (2), intrinsic layer (3), n-type gallium nitride (4), quantum well (5), p-type gallium nitride (6) are sequentially grown in MOCVD; it is characterized in that the transparent The electrode (7) is an ITO/zinc oxide-based transparent conductive film, wherein the material of the ITO transparent conductive film is indium tin oxide of Sn₂ O₃ :In₂ O₃ =1:9, and the material of the zinc oxide-based transparent conductive film is ZnO:Ga or ZnO:Al or ZnO:In; the n-type metal electrode (8) is a metal composite electrode, the material is Ti/Al or Cr/Pt/Au; the p-type metal electrode (9) is a metal composite electrode The electrode is made of Ni/Au or Cr/Pt/Au.2.根据权利要求1所述的ITO/氧化锌基复合透明电极发光二极管,其特征在于，p型金属电极具有特殊形状: 为正十字架形，此种形状p型金属电极(9)使得电流扩散更均匀，提高LED芯片的可靠性。2. ITO/zinc oxide based composite transparent electrode light-emitting diode according to claim 1, is characterized in that, p-type metal electrode has special shape: is positive cross shape, and this kind of shape p-type metal electrode (9) makes electric current diffuse More uniform, improve the reliability of LED chips.3.一种制造根据权利1要求所述的ITO/氧化锌基复合透明电极发光二极管的制作方法，其特征在于，工艺步骤如下：3. A method for manufacturing the ITO/zinc oxide-based composite transparent electrode light-emitting diode according to claim 1, characterized in that the process steps are as follows:a. 用MOCVD的方法在衬底上依次缓冲层(2)、本征层(3)、n型氮化镓(4)、量子阱(5)、p型氮化镓(6)；a. Use MOCVD method to sequentially build buffer layer (2), intrinsic layer (3), n-type gallium nitride (4), quantum well (5), p-type gallium nitride (6) on the substrate;b. 对外延片进行镁激活退火处理；b. Magnesium activation annealing treatment is performed on the epitaxial wafer;c. 使用化学试剂对外延片进行表面处理，其化学试剂是KOH或者HCl或者王水；c. Use chemical reagents for surface treatment of epitaxial wafers, the chemical reagents are KOH or HCl or aqua regia;d. 通过电子束蒸发或磁控溅射和磁控溅射分别沉积ITO透明导电薄膜和氧化锌透明导电薄膜,形成ITO/氧化锌基复合电极(7)；d. Deposit ITO transparent conductive film and zinc oxide transparent conductive film respectively by electron beam evaporation or magnetron sputtering and magnetron sputtering to form ITO/zinc oxide based composite electrode (7);e. 用湿法腐蚀的方法刻蚀出所设计的氧化锌透明导电薄膜(7)图形；E. Etch the designed zinc oxide transparent conductive film (7) pattern with wet etching method;f. 通过氩离子刻蚀或ICP干法刻蚀将n型氮化镓暴露出来，制备出所需芯片结构；f. Exposing n-type gallium nitride by argon ion etching or ICP dry etching to prepare the desired chip structure;g. 对外延片进行退火处理，一方面降低ITO薄膜层与氮化镓表面层以及ITO薄膜层和氧化锌基薄膜层以及之间的接触电阻，一方面修复刻蚀损伤；g. Annealing the epitaxial wafer, on the one hand, reduces the contact resistance between the ITO film layer and the gallium nitride surface layer, and the ITO film layer and the zinc oxide-based film layer, and repairs the etching damage on the one hand;h. 通过热蒸发或电子束蒸发的方法沉积n型金属电极(8)和p型金属电极(9)h. Deposit n-type metal electrodes (8) and p-type metal electrodes (9) by thermal evaporation or electron beam evaporationi. 再次退火处理，进行金属电极的合金化；i. Annealing treatment again to carry out alloying of metal electrodes;j. 分割外延片。j. Separation of epiwafers.4.根据权利要求3所述的ITO/氧化锌基复合透明电极发光二极管的制作方法，其特征在于，所述的ITO/氧化锌基复合透明电极(7)是依次利用电子束蒸镀或者磁控溅射的方法将ITO透明薄膜蒸镀在p型氮化镓表面，再利用磁控溅射的方法将氧化锌透明薄膜溅射在ITO薄膜表面，形成ITO/氧化锌复合透明电极。4. the manufacture method of ITO/zinc oxide-based composite transparent electrode light-emitting diode according to claim 3, is characterized in that, described ITO/zinc oxide-based composite transparent electrode (7) utilizes electron beam evaporation or magnetic The ITO transparent film is vapor-deposited on the surface of p-type gallium nitride by sputtering method, and then the zinc oxide transparent film is sputtered on the surface of the ITO film by magnetron sputtering to form an ITO/zinc oxide composite transparent electrode.5.根据权利要求3所述的ITO/氧化锌基复合透明电极发光二极管的制备方法，其特征在于，利用氩离子或ICP干法刻蚀将n型氮化镓暴露出来，退火处理后利用热蒸发等薄膜沉积方法生长金属电极。5. The preparation method of the ITO/zinc oxide-based composite transparent electrode light-emitting diode according to claim 3, characterized in that n-type gallium nitride is exposed by argon ion or ICP dry etching, and after annealing treatment, heat is used to Thin film deposition methods such as evaporation grow metal electrodes.6.根据权利要求3所述的ITO/氧化锌基复合透明电极发光二极管的制备方法，其特征在于，芯片的尺寸为1mm×1mm，为了辅助ITO/氧化锌进行更好的电流扩散，设计了一种正十字p型金属电极，ITO/氧化锌透明电极改善了p型氮化镓表面与透明电极层之间的接触电阻，提高了LED的光提取效率，而此种形状的p型金属电极是的电流扩散更均匀，从而提高了LED芯片的可靠性。6. The preparation method of the ITO/zinc oxide-based composite transparent electrode light-emitting diode according to claim 3, characterized in that the size of the chip is 1mm × 1mm, in order to assist ITO/zinc oxide to carry out better current diffusion, designed A positive cross p-type metal electrode, the ITO/zinc oxide transparent electrode improves the contact resistance between the p-type gallium nitride surface and the transparent electrode layer, and improves the light extraction efficiency of the LED, and the p-type metal electrode of this shape Yes, the current spreads more evenly, which improves the reliability of the LED chip.

Images