CN101921999B - Multiple-reaction cavity metallorganic chemical vapor deposition equipment - Google Patents

Abstract

The invention relates to multiple-reaction cavity metallorganic chemical vapor deposition equipment comprising a gas transport system, reaction cavities, a tail gas treatment system, heaters and a wafer fetch and transport mechanism. The equipment is characterized by comprising two or more than two reaction cavities; the reaction cavities are mutually connected by the gas transport system; the equipment is provided with the tail gas treatment system; each reaction cavity is connected with the tail gas treatment device; a control valve is arranged in a pipeline; the reaction cavities are arranged in glove boxes; the wafer fetch and transport mechanism is arranged among the glove boxes; both ends of the wafer fetch and transport mechanism are respectively provided with a valve; and each cavity is provided with one heater. The invention has the advantages that the equipment is provided with a plurality of reaction cavities, can complete various process manufactures in one step and switches to another growth process after one growth process is ended, and thereby, the processing time and the energy sources are saved, the efficiency is improved, the cost is reduced and the product quality is improved.

Description

Multiple-reaction cavity metallorganic chemical vapor deposition equipment

Technical field

The present invention relates to a kind of semiconductor manufacturing facility, particularly a kind of multiple-reaction cavity metallorganic chemical vapor deposition equipment.

Background technology

Metal-organic chemical vapor deposition equipment (Metal Organic Chemical Deposition, be called for short MOCVD) be a kind of advanced person's vapor phase epitaxy technique, it is multidisciplinary that it integrates precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer, is high-end semiconductor material, the photoelectron specific equipment that a kind of level of automation is high, expensive, the technology integrated level is high.To be reactant gases carry via the gas transport system by carrier gas its principle of work takes reaction chamber to, well heater provides temperature reliable thermal boundary condition for the chemical reaction in reaction chamber, thereby reactant deposits thin film at generation chemical reaction on graphite plate on wafer.The component of film and growth velocity determine by the air-flow of various heterogeneities and the source flux of accurately controlling.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; have that quality is high, good stability, good reproducibility, technique flexibly, can the mass-producing volume production etc. characteristics; become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.

The MOCVD producer of main flow mainly contains two in the market: the Aixtron of Germany and the VECCO of the U.S..This equipment of two only has a reaction chamber usually, can not carry out simultaneously kinds of processes, due to the growth different layers film the time source composition and flow different, required temperature is also different, when carrying out another kind of technique like this after a kind of technique is completed, the time that waiting temperature rises or descends is longer, thereby causes higher cost.For example, during growth blue-light LED chip material, required temperature range is from 200 degrees centigrade to 1300 degrees centigrade, and generally all in tens degree, so large temperature range makes the waiting time between different process longer due to present well heater temperature rate.

Summary of the invention

The present invention is directed to the deficiency in prior art, proposed a kind of novel multiple-reaction cavity metallorganic chemical vapor deposition equipment, it can significantly improve the production efficiency of yield production type MOCVD equipment.the present invention includes: the gas transport system, reaction chamber, exhaust gas processing device, well heater, delivery device, exhaust treatment system is by control valve, the tail gas pipeline, vacuum pump, exhaust gas processing device forms, it is characterized in that: equipment has two or more reaction chambers, realized interconnecting by the gas transport system respectively between each reaction chamber, described equipment is provided with an exhaust gas processing device, each reaction chamber is connected with the entrance of exhaust gas processing device through pipe connecting, be provided with the control valve of a capable of regulating flow quantity in the connecting pipeline of each reaction chamber and exhaust gas processing device, reaction chamber is arranged on inside glove box, be provided with delivery device between glove box and glove box, the delivery device two ends respectively are provided with a valve, each reaction chamber is provided with one and overlaps independently well heater.

Each reaction chamber is only done a kind of technique, keeps specific flow and specific temperature.After the first technique is completed, utilize the mechanical manipulator of delivery device that graphite plate is transferred to second reaction chamber and carry out the second technique, the temperature in this moment second reaction chamber and the flow of source gas are ready to, can carry out immediately growth technique.After the second technique was completed, the mechanical manipulator of recycling delivery device was transferred to the 3rd reaction chamber with graphite plate and is carried out the third technique, by that analogy.

Advantage of the present invention is that this equipment has a plurality of reaction cavities, can one-stop operation carry out multiple gas-phase deposition manufacturing, composition and flow and the temperature in source during according to different growing film, complete the switching of carrying out another growth technique after being finished by a kind of growth technique, time, the energy of processing had both been saved, improve efficient, reduced again the quality of production cost raising product.

Description of drawings

Fig. 1 has the structural representation of the present invention of the metal-organic chemical vapor deposition equipment of three reaction chambers;

The structural representation of Fig. 2 reaction chamber.

In figure: the valve that the valve of the valve of 1 source gas, 2 gas transport pipelines, 3 delivery devices, 4 delivery devices, 5 delivery devices, 6 delivery devices are connected with the environment end, 7 reaction chambers, 8 exhaust gas processing devices, 9 vacuum pumps, 10 control valves, 11 tail gas pipelines, 12 valves, 13 valves, 14 source of the gas steel cylinders, 15 reaction cavity upper cover, 16 graphite plates, 17 well heaters, 18 reaction chamber lower covers, 19 nose cones, a glove box, b glove box, c glove box.

Embodiment

Further illustrate embodiments of the invention below in conjunction with accompanying drawing:

Referring to Fig. 1, equipment of the present invention has two or more reaction chambers 7, is realized interconnecting by the gas transport system respectively between each reaction chamber 7, and the equipment of the present embodiment has three reaction chambers 7.Three reaction chambers 7 are arranged on respectively in glove box a, glove box b, glove box c, and each reaction chamber 7 is comprised of reaction cavityupper cover 15,graphite plate 16,well heater 17, reaction chamberlower cover 18, nose cone 19.Reaction cavityupper cover 15 and reaction chamberlower cover 18 are detachable, satisfy mechanical manipulator andshift graphite plate 16 from reaction chamber 7, andnose cone 19 is quartz construction, can play insulation effect, thereby improve heat utilization efficiency, referring to Fig. 2.Exhaust treatment system is comprised ofcontrol valve 10, tail gas pipeline 11, vacuum pump 9, exhaustgas processing device 8, source gas 1 carries through gas transport pipeline 2 by carrier gas from source of the gas steel cylinder 14 and arrives in reaction chamber 7, and reacted tail gas is processed by exhaustgas processing device 8 byvalve 10, tail gas pipeline 11, vacuum pump 9.Delivery device 4 is mechanical manipulator, glove box a, glove box b, glove box c are interconnection by delivery device 4,graphite plate 16 relies on mechanical manipulator to deliver transfer between glove box, delivery device 4 two ends respectively are provided with thevalve 3 of a delivery device, the valve 5 of delivery device, to guarantee delivery device 4 and the pressure equilibrium of glove box and the switching between each growthtechnique.graphite plate 16 from the process that glove box a transfers to glove box b is: two adjacent glove box a glove box b are connected by delivery device 4, first open thevalve 3 between glove box a and delivery device, make the interior pressure of delivery device 4 and the pressure equilibrium in glove box a,graphite plate 16 is transferred in delivery device 4 through mechanical manipulator, then close thisvalve 3, then open the valve 5 of delivery device and glove box b, make the interior pressure of delivery device 4 and the pressure equilibrium in glove box b, againgraphite plate 16 in mechanical manipulator is transferred to glove box b, close at last this valve 5.Even the unequal transfer process that also can not affectwhole graphite plate 16 of pressure in adjacent like this two glove boxes has increased processing range.The transfer process of glove box b and glove box c is also completed the transfer ofgraphite plate 16 by that analogy by delivery device 4, be connected with atmospheric environment at last.

because entering glove box, atmospheric environment may pollute equipment, so will carry out purifying treatment to the gas in delivery device 4, its process is as follows: open the valve 6 that delivery device 4 is connected with the environment end, close the valve 6 that delivery device 4 is connected with the environment end after putting intographite plate 16, open valve 12, delivery device 4 is vacuumized, then shut-off valve 12 is opened valve 13 simultaneously, delivery device 4 is communicated with reaction chamber a, thereby make its pressure equilibrium, shut-off valve 13 is opened valve 12 and is vacuumized again, so circulation several times, until the gas in delivery device 4 reaches the purification requirement.

The present embodiment is when growing InGaN/GaN structure, the first step is at 1050 degrees centigrade of left and right growing n-type GaN, second step is that (growth temperature of building layer is 850 degrees centigrade of left and right to the growth multiple quantum well layer, the growth temperature of trap layer is 750 degrees centigrade of left and right), the 3rd step was at 850 degrees centigrade of left and right growing p-type GaN.At first at first reaction chamber a the inside growing n-type GaN, temperature is controlled at 1050 degrees centigrade of left and right by well heater; Then graphite plate 7 is transferred to second reaction chamber b growth Multiple Quantum Well, at this moment first reaction chamber can be placed the graphite plate that is mounted with new wafer and carries out the growth of N-shaped GaN; At last again the graphite plate of the multi-quantum pit structure of having grown in second reaction chamber b is transferred to the 3rd reaction chamber c and carry out the growth of p-type GaN, temperature is controlled at 850 degrees centigrade of left and right by well heater.

The equipment of the present embodiment is provided with an exhaustgas processing device 8, each reaction chamber 7 is connected through the entrance of tail gas pipeline 11 with exhaustgas processing device 8, share a vacuum pump 9 on tail gas pipeline 11, be provided with thecontrol valve 10 of a capable of regulating flow quantity in the connecting pipeline of each reaction chamber 7 and exhaust gas processing device, reaction chamber 7 all is provided with one and overlaps independently well heater 17.Keep the pumping speed of vacuum pump constant, only need to regulate pressure in each reaction chamber by the aperture of regulating itscontrol valve 10, make it satisfy different processing requirements.

Claims (1)

1. multiple-reaction cavity metallorganic chemical vapor deposition equipment, comprise: the gas transport system, reaction chamber, exhaust treatment system, well heater, delivery device, exhaust treatment system is by control valve, the tail gas pipeline, vacuum pump, exhaust gas processing device forms, it is characterized in that: equipment has two or more reaction chambers, realized interconnecting by the gas transport system respectively between each reaction chamber, each reaction chamber is connected with the entrance of exhaust gas processing device through pipe connecting, be provided with the control valve of a capable of regulating flow quantity in the connecting pipeline of each reaction chamber and exhaust gas processing device, reaction chamber is arranged on inside glove box, be provided with delivery device between glove box and glove box, the delivery device two ends respectively are provided with a valve, each reaction chamber is provided with one and overlaps independently well heater, described delivery device is mechanical manipulator, interconnection by delivery device between glove box, graphite plate is shifted between glove box by mechanical manipulator, the delivery device two ends are equipped with valve, to guarantee delivery device and the pressure equilibrium of glove box and the switching between each growth technique.

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