CN101866995B - Light-emitting diode packaging structure - Google Patents

Abstract

The invention discloses a light emitting diode packaging structure which comprises a bearing substrate, at least one light emitting diode chip, an optical element and high-heat-conductivity light-transmitting liquid. The light emitting diode chip is arranged on the bearing substrate and is provided with an active layer. The optical element is arranged on the bearing substrate, a closed space is formed between the optical element and the bearing substrate, and the light-emitting diode chip is positioned in the closed space. The high heat conduction light-transmitting liquid is filled in the closed space. According to the invention, the high-heat-conduction light-transmitting liquid is filled in the closed space, so that the heat conduction efficiency of the LED chip can be improved through the bearing substrate, and the heat conduction efficiency of the side wall and the top surface of the LED chip can also be improved through the high-heat-conduction light-transmitting liquid.

Description

Translated fromChinese

发光二极管封装结构Light-emitting diode packaging structure

技术领域technical field

本发明涉及一种发光二极管封装结构，且特别是涉及一种具有高导热效率的发光二极管封装结构。The invention relates to a light-emitting diode packaging structure, and in particular to a light-emitting diode packaging structure with high heat conduction efficiency.

背景技术Background technique

近年来，由于发光二极管的发光效率不断提升，使得发光二极管开始广泛被使用于许多照明应用中，例如需要高速反应的扫描器灯源、液晶显示器的背光源或前光源汽车的仪表板照明、交通号志灯，以及一般的照明装置等。发光二极管的发光原理是将电能转换为光，也就是对发光二极管施加电流，通过电子、空穴的结合以光的型态释放出来，进而达到发光的效果。In recent years, due to the continuous improvement of the luminous efficiency of light-emitting diodes, light-emitting diodes have been widely used in many lighting applications, such as scanner light sources that require high-speed response, backlight or front light sources for liquid crystal displays, instrument panel lighting for vehicles, traffic Signal lights, and general lighting installations, etc. The light-emitting principle of light-emitting diodes is to convert electrical energy into light, that is, to apply current to the light-emitting diodes, and release them in the form of light through the combination of electrons and holes, thereby achieving the effect of light.

图1绘示已知发光二极管封装结构的剖面图。请参照图1，已知的发光二极管封装结构100由发光二极管芯片110、承载基板120、导线132、导线134以及封装胶体140构成。其中，发光二极管芯片110设置于承载基板120上，而且导线132、导线134分别电性连接于发光二极管芯片110与承载基板120之间。封装胶体140设置于承载基板120上并包覆导线132、导线134。发光二极管芯片110主要是通过对两条导线132、导线134施加电压差以使发光二极管芯片110的有源层112发光，同时有源层112也会产生热量，若发光二极管芯片110的有源层112发光时所产生的热量无法有效排出，特别在高电流驱使下时，发光二极管芯片110往往容易因过热而损坏。FIG. 1 is a cross-sectional view of a known LED package structure. Referring to FIG. 1 , a knownLED packaging structure 100 is composed of aLED chip 110 , acarrier substrate 120 ,wires 132 ,wires 134 and anencapsulant 140 . Wherein, theLED chip 110 is disposed on thecarrier substrate 120 , and thewires 132 and 134 are respectively electrically connected between theLED chip 110 and thecarrier substrate 120 . Theencapsulant 140 is disposed on thecarrier substrate 120 and covers thewires 132 and thewires 134 . The light-emittingdiode chip 110 mainly makes theactive layer 112 of the light-emittingdiode chip 110 emit light by applying a voltage difference to the twowires 132 and 134. At the same time, theactive layer 112 also generates heat. If the active layer of the light-emittingdiode chip 110 The heat generated when 112 emits light cannot be effectively discharged, especially when driven by high current, theLED chip 110 is often easily damaged due to overheating.

发明内容Contents of the invention

本发明提供一种发光二极管封装结构，特别是一种发光二极管的封装散热结构，以提升封装整体导热效率。The invention provides a packaging structure of a light emitting diode, in particular a heat dissipation structure of a packaging of a light emitting diode, so as to improve the overall heat conduction efficiency of the packaging.

本发明提出一种发光二极管封装结构包括承载基板、至少一发光二极管芯片、光学元件以及高导热透光液体。发光二极管芯片配置于承载基板上，并具有有源层。光学元件配置于承载基板上，光学元件与承载基板之间形成封闭空间，且发光二极管芯片位于封闭空间中。高导热透光液体填满于封闭空间中。其中，相对于发光二极管芯片所发出的主波长的光，高导热透光液体的光穿透率大于80％，高导热透光液体的导热系数大于环氧树脂的导热系数。The present invention proposes a light emitting diode packaging structure including a carrier substrate, at least one light emitting diode chip, an optical element, and a highly thermally conductive and light-transmitting liquid. The light emitting diode chip is configured on the carrier substrate and has an active layer. The optical element is arranged on the carrying substrate, a closed space is formed between the optical element and the carrying substrate, and the LED chip is located in the closed space. High thermal conductivity and light-transmitting liquid is filled in the closed space. Wherein, relative to the light of the main wavelength emitted by the light-emitting diode chip, the light transmittance of the high thermal conductivity and light-transmitting liquid is greater than 80%, and the thermal conductivity of the high-thermal-conduction and light-transmitting liquid is greater than that of epoxy resin.

本发明提出一种发光二极管封装结构包括承载基板、至少一凸起部、至少一发光二极管芯片、光学元件以及高导热透光液体。凸起部配置于承载基板上，并具有开口以暴露出承载基板，且凸起部的材料为导热材料。发光二极管芯片配置于承载基板上并位于开口中，且开口截面的宽度与发光二极管芯片截面的宽度比值为1至1.5。光学元件配置于承载基板上，光学元件与承载基板之间形成封闭空间，且凸起部与发光二极管芯片位于封闭空间中。高导热透光液体填满于封闭空间中。其中，相对于发光二极管芯片所发出的主波长的光，高导热透光液体的光穿透率大于80％，高导热透光液体的导热系数大于环氧树脂的导热系数。The present invention proposes a light emitting diode packaging structure including a carrier substrate, at least one raised portion, at least one light emitting diode chip, an optical element, and a highly thermally conductive and light-transmitting liquid. The protruding part is arranged on the carrying substrate and has an opening to expose the carrying substrate, and the material of the protruding part is a heat-conducting material. The light emitting diode chip is arranged on the carrier substrate and located in the opening, and the ratio of the width of the cross section of the opening to the width of the cross section of the light emitting diode chip is 1 to 1.5. The optical element is arranged on the carrying substrate, a closed space is formed between the optical element and the carrying substrate, and the protruding part and the LED chip are located in the closed space. High thermal conductivity and light-transmitting liquid is filled in the closed space. Wherein, relative to the light of the main wavelength emitted by the light-emitting diode chip, the light transmittance of the high thermal conductivity and light-transmitting liquid is greater than 80%, and the thermal conductivity of the high-thermal-conduction and light-transmitting liquid is greater than that of epoxy resin.

本发明提出一种发光二极管封装结构包括承载基板、至少一垫高部、至少一发光二极管芯片、光学元件、高导热透光液体以及密封元件。垫高部配置于承载基板上，具有至少一沟槽与远离承载基板的第一顶面，且垫高部的材料为导热材料。发光二极管芯片配置于垫高部的第一顶面上。光学元件配置于承载基板上，光学元件与承载基板之间形成封闭空间，且垫高部与发光二极管芯片位于封闭空间中。高导热透光液体填满于封闭空间中，并填满于沟槽中。其中，相对于发光二极管芯片所发出的主波长的光，高导热透光液体的光穿透率大于80％，高导热透光液体的导热系数大于环氧树脂的导热系数。The invention proposes a light emitting diode packaging structure including a carrier substrate, at least one pad, at least one light emitting diode chip, an optical element, a highly heat-conductive and light-transmitting liquid, and a sealing element. The raised portion is disposed on the carrier substrate, has at least one groove and a first top surface away from the carrier substrate, and the material of the raised portion is a heat-conducting material. The light emitting diode chip is configured on the first top surface of the raised part. The optical element is arranged on the carrying substrate, and a closed space is formed between the optical element and the carrying substrate, and the raised part and the LED chip are located in the closed space. The highly thermally conductive and light-transmitting liquid is filled in the closed space and filled in the grooves. Wherein, relative to the light of the main wavelength emitted by the light-emitting diode chip, the light transmittance of the high thermal conductivity and light-transmitting liquid is greater than 80%, and the thermal conductivity of the high-thermal-conduction and light-transmitting liquid is greater than that of epoxy resin.

基于上述，本发明的高导热透光液体填满于封闭空间中，因此，发光二极管芯片不仅可通过承载基板提升其底部的导热效率，还可通过高导热透光液体提升其侧壁与顶面的导热效率。Based on the above, the high thermal conductivity and light-transmitting liquid of the present invention is filled in the closed space, therefore, the light-emitting diode chip can not only improve the heat conduction efficiency of its bottom through the carrier substrate, but also improve its side wall and top surface through the high heat-conducting and light-transmitting liquid thermal conductivity.

为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

附图说明Description of drawings

图1绘示已知发光二极管封装结构的剖面图。FIG. 1 is a cross-sectional view of a known LED package structure.

图2绘示本发明实施例的发光二极管封装结构的剖面图。FIG. 2 is a cross-sectional view of an LED packaging structure according to an embodiment of the present invention.

图3绘示图2的发光二极管封装结构的一种变化型。FIG. 3 illustrates a modification of the LED package structure in FIG. 2 .

图4A绘示本发明实施例的发光二极管封装结构的剖面图。FIG. 4A is a cross-sectional view of an LED packaging structure according to an embodiment of the present invention.

图4B绘示图4A的发光二极管封装结构的一种变化。FIG. 4B illustrates a variation of the LED package structure shown in FIG. 4A .

图5绘示本发明实施例的发光二极管封装结构的剖面图。FIG. 5 is a cross-sectional view of an LED packaging structure according to an embodiment of the present invention.

图6A与图6B绘示图5的发光二极管封装结构的二种变化型。6A and 6B illustrate two variants of the LED package structure shown in FIG. 5 .

附图标记说明Explanation of reference signs

100、200、400、500：发光二极管封装结构100, 200, 400, 500: LED packaging structure

110、220：发光二极管芯片110, 220: LED chip

112：有源层112: active layer

114、222：底面114, 222: bottom surface

116、224：侧壁116, 224: side wall

118、226：顶面118, 226: top surface

120、210：承载基板120, 210: carrying substrate

132、134、C：导线132, 134, C: Wire

140：封装胶体140: encapsulation colloid

212：表面212: surface

230：光学元件230: Optics

232：凹槽232: Groove

232a：开放端232a: Open end

234：外缘234: outer edge

240：高导热透光液体240: High thermal conductivity and light-transmitting liquid

242：悬浮粒子242: Suspended particles

250：密封元件250: sealing element

252：第二顶面252: second top surface

260：连接层260: Connection layer

270：固定组件270: Fixed components

280、F：粘着层280, F: Adhesive layer

290：反射层290: reflective layer

410、516：凸起部410, 516: convex part

510：垫高部510: Padded part

512：第一顶面512: first top surface

514：底部514: Bottom

A：内壁A: inner wall

D：深度D: Depth

E1、E2：电极E1, E2: electrodes

G：间隙G: Gap

H1、H2：距离H1, H2: Distance

OP：开口OP: open

P：接垫P: Pad

S：封闭空间S: closed space

T：沟槽T: Groove

W1、W2、W3、W4：宽度W1, W2, W3, W4: Width

具体实施方式Detailed ways

图2绘示本发明实施例的发光二极管封装结构的剖面图。请参照图2，发光二极管封装结构200包括承载基板210、发光二极管芯片220、光学元件230以及高导热透光液体240。FIG. 2 is a cross-sectional view of an LED packaging structure according to an embodiment of the present invention. Please refer to FIG. 2 , theLED packaging structure 200 includes acarrier substrate 210 ,LED chips 220 ,optical elements 230 and a highly thermally conductive andtransparent liquid 240 .

承载基板210例如是高导热基板，其中高导热基板例如是氧化铝基板(Al₂O₃)、氮化铝基板(AlN)、铜基板、铝基板等具有良好热导性质的基板。在本实施例中，高导热基板的导热系数例如是大于25W/mK。发光二极管芯片220配置于承载基板210上，并具有有源层(未绘示)。在本实施例中，若需产生特定色光(如白光)时，可选择性地在发光二极管芯片220的出光路径上形成光转换层(未绘示)。详细而言，光转换层可以是直接覆盖于发光二极管芯片220的表面，以增加光均匀性，另外，光转换层也可以是非直接贴覆于发光二极管芯片表面，如此可避免光转换层因芯片的热产生黄化。此外，为提升承载基板210的散热效率，可选择性地在承载基板210的远离发光二极管芯片220的表面212配置散热器(未绘示)。Thecarrier substrate 210 is, for example, a substrate with high thermal conductivity, wherein the substrate with high thermal conductivity is, for example, an aluminum oxide substrate (Al₂ O₃ ), an aluminum nitride substrate (AlN), a copper substrate, an aluminum substrate, and the like with good thermal conductivity. In this embodiment, the thermal conductivity of the high thermal conductivity substrate is, for example, greater than 25W/mK. TheLED chip 220 is disposed on thecarrier substrate 210 and has an active layer (not shown). In this embodiment, if a specific color light (such as white light) needs to be generated, a light conversion layer (not shown) can be selectively formed on the light output path of theLED chip 220 . In detail, the light conversion layer can be directly covered on the surface of theLED chip 220 to increase the uniformity of light. In addition, the light conversion layer can also be indirectly attached to the surface of the LED chip, so that the light conversion layer can be prevented from being damaged by the chip. Heat produces yellowing. In addition, in order to improve the heat dissipation efficiency of thecarrier substrate 210 , a heat sink (not shown) may be optionally disposed on thesurface 212 of thecarrier substrate 210 away from the LED chips 220 .

光学元件230配置于承载基板210上，光学元件230与承载基板210之间形成封闭空间S，且发光二极管芯片220位于封闭空间S中。具体而言，在本实施例中，光学元件230为弧形光学元件，光学元件230具有凹槽232，且承载基板210配置于凹槽232的开放端232a上，以密封凹槽232并形成封闭空间S。光学元件230的材料例如为玻璃等透光性质良好的材料，光学元件230例如为透镜。在本实施例中，光学元件230相对于发光二极管芯片220所发出的(部分或全部)光的波长而言是可穿透的，例如光学元件230相对于可见光的波长而言是可穿透的。Theoptical element 230 is disposed on thecarrier substrate 210 , an enclosed space S is formed between theoptical element 230 and thecarrier substrate 210 , and theLED chip 220 is located in the enclosed space S. Specifically, in this embodiment, theoptical element 230 is a curved optical element, theoptical element 230 has agroove 232, and thecarrier substrate 210 is disposed on theopen end 232a of thegroove 232 to seal thegroove 232 and form a closed Space S. The material of theoptical element 230 is, for example, a material with good light transmission properties such as glass, and theoptical element 230 is, for example, a lens. In this embodiment, theoptical element 230 is transparent to the wavelength of (part or all) light emitted by theLED chip 220, for example, theoptical element 230 is transparent to the wavelength of visible light .

光学元件230的材料例如为玻璃、环氧树脂或透明塑料，其中透明塑料为烯烃族(olefinic)的透明塑料或是脂肪族(aliphatic)的透明塑料(例如聚丙烯或聚乙烯)，且前述透明塑料在接触非质子性溶剂(例如含有丙烯碳酸盐的溶液)时，不易劣化。透明塑料例如为环状烯烃共聚物(cyclic olefincopolymer)、聚甲基戊烯(polymethylpentenes)、氢化环烯烃聚合物(hydrogenated cyclo-olefin polymers)或是非晶的环烯烃共聚物(amorphouscyclo-olefin copolymers)。The material of theoptical element 230 is, for example, glass, epoxy resin or transparent plastic, wherein the transparent plastic is olefinic (olefinic) transparent plastic or aliphatic (aliphatic) transparent plastic (such as polypropylene or polyethylene), and the aforementioned transparent Plastics are less susceptible to degradation when exposed to aprotic solvents such as solutions containing propylene carbonate. Transparent plastics are, for example, cyclic olefin copolymers, polymethylpentenes, hydrogenated cyclo-olefin polymers, or amorphous cyclo-olefin copolymers.

高导热透光液体240填满于封闭空间S中，其为具备高热传导性及流动性的液体。在本实施例中，高导热透光液体240的导热系数(thermalconductivity)大于环氧树脂(epoxy)的导热系数，且当相对于发光二极管芯片220所发出的主波长的光时，高导热透光液体240的光穿透率(transmittance)大于80％。因此，高导热透光液体240可直接接触承载基板210、光学元件230与发光二极管芯片220的暴露于封闭空间S中的全部表面。如此一来，可通过高导热透光液体240的流动将发光二极管芯片220在发光时所产生的热传导至承载基板210与光学元件230，并经由承载基板210与光学元件230传导至发光二极管封装结构200外。值得注意的是，在本实施例中，发光二极管芯片220不仅可通过承载基板210提升其底面222的导热效率，还可通过高导热透光液体240提升其侧壁224与顶面226的导热效率。The high thermal conductivity andtransparent liquid 240 is filled in the enclosed space S, which is a liquid with high thermal conductivity and fluidity. In this embodiment, the thermal conductivity of the highthermal conductivity liquid 240 is greater than the thermal conductivity of epoxy resin (epoxy), and when compared to the light of the main wavelength emitted by the light emittingdiode chip 220, the high thermal conductivity transmits light The light transmittance of the liquid 240 is greater than 80%. Therefore, the highly thermally conductive and light-transmittingliquid 240 can directly contact all surfaces of thecarrier substrate 210 , theoptical element 230 and theLED chip 220 exposed in the enclosed space S. Referring to FIG. In this way, the heat generated by the light-emittingdiode chip 220 when emitting light can be conducted to thecarrier substrate 210 and theoptical element 230 through the flow of the highly heat-conductive light-transmittingliquid 240 , and then transferred to the LED packaging structure through thecarrier substrate 210 and theoptical element 230 200 away. It is worth noting that, in this embodiment, the light-emittingdiode chip 220 can not only improve the heat conduction efficiency of itsbottom surface 222 through thecarrier substrate 210, but also improve the heat conduction efficiency of itsside wall 224 andtop surface 226 through the highly heat-conductive light-transmittingliquid 240. .

在本实施例中，为避免高导热透光液体240使发光二极管芯片220的二电极E1、E2之间电性短路，高导热透光液体240例如是不导电液体。高导热透光液体240的材料是选自硅油(silicon oils)、白蜡油(paraffin oils)、橄榄油(olive oils)、碳酸丙烯脂(propylene carbonate)、全氟聚醚液其中之一或是其他具备高热传导性与流动性的液体。值得注意的是，当高导热透光液体240具有导电性时，可在发光二极管芯片220的导电的部分(例如接垫P)、发光二极管芯片220的电性连接的部分(例如导线C)以及发光二极管芯片220侧壁有源层的部分上形成隔绝层(其材料例如是绝缘材料)，隔绝层可隔绝高导热透光液体240以避免高导热透光液体240造成元件短路，例如利用光转换层来包裹发光二极管芯片220以形成隔绝层。In this embodiment, in order to avoid the electrical short circuit between the two electrodes E1 and E2 of theLED chip 220 by the high thermal conductivity andlight transmission liquid 240 , the high thermal conductivity andlight transmission liquid 240 is, for example, a non-conductive liquid. The material of the high thermal conductivity and light-transmittingliquid 240 is selected from one of silicone oils, paraffin oils, olive oils, propylene carbonate, perfluoropolyether liquid or other Liquid with high thermal conductivity and fluidity. It is worth noting that when the high thermal conductivity and light-transmittingliquid 240 has conductivity, it can be used on the conductive part (such as the pad P) of theLED chip 220, the electrically connected part of the LED chip 220 (such as the wire C) and An insulating layer (such as an insulating material) is formed on the active layer of the side wall of the light-emittingdiode chip 220. The insulating layer can isolate the high thermal conductivity and light-transmittingliquid 240 to prevent the high-thermal-conduction and light-transmitting liquid 240 from causing a short circuit of the element, for example, by using light conversion layer to wrap theLED chip 220 to form an isolation layer.

在本实施例中，高导热透光液体240可掺杂有多个悬浮粒子242，举例来说，高导热透光液体240例如是掺杂有二氧化钛粒子的去离子水(deionizedwater)。由于悬浮粒子242可增加发光二极管芯片220所发出的光线的折射与反射，故可有效提高出光角度，以避免光线直接射入人眼所造成的不适。In this embodiment, the high thermal conductivitytransparent liquid 240 can be doped with a plurality of suspendedparticles 242 , for example, the high thermal conductivitytransparent liquid 240 is deionized water doped with titanium dioxide particles. Since the suspendedparticles 242 can increase the refraction and reflection of the light emitted by theLED chip 220 , the light output angle can be effectively increased to avoid discomfort caused by the light directly entering human eyes.

高导热透光液体240为在室温下具有流动性的液体，其粘滞系数例如是小于10000mPas。在本实施例中，为避免高导热透光液体240在低温下结冻，可在高导热透光液体240中添加抗冻材料，以维持其流动性，抗冻材料例如甲醇或乙二醇。The high thermal conductivity and light-transmittingliquid 240 is a fluid liquid at room temperature, and its viscosity coefficient is, for example, less than 10000 mPas. In this embodiment, in order to prevent the high thermal conductivity and light-transmitting liquid 240 from freezing at low temperature, an antifreeze material can be added to the high heat-conduction and light-transmittingliquid 240 to maintain its fluidity, such as methanol or ethylene glycol.

此外，发光二极管封装结构200可选择性地具有密封元件250。密封元件250连接光学元件230的外缘234与承载基板210，且位于封闭空间S外，密封元件250的材料例如是金属或合金，其中前述合金例如是铁钴镍合金(商业上名为Kovar alloy)。密封元件250连接承载基板210的方式例如是金属与金属之间相互连接，故密封元件250连接承载基板210的可靠度佳。In addition, theLED packaging structure 200 can optionally have asealing element 250 . The sealingelement 250 connects theouter edge 234 of theoptical element 230 and thecarrier substrate 210, and is located outside the closed space S. The material of the sealingelement 250 is, for example, a metal or an alloy, wherein the aforementioned alloy is, for example, an iron-cobalt-nickel alloy (commercially named as Kovar alloy). ). The way the sealingelement 250 is connected to thecarrier substrate 210 is, for example, metal to metal interconnection, so the reliability of the sealingelement 250 connecting to thecarrier substrate 210 is good.

在本实施例中，列举下列三种连接光学元件230与密封元件250的方法，但并非用以限定本发明。方法1是将光学元件230加热至其玻璃转换温度或软化温度，再使密封元件250镶在光学元件230的外缘234上。方法2是先将光学元件230的外缘234金属化(例如镀金属，例如钛)，然后，利用焊料(未绘示)接合光学元件230与密封元件250。方法3是利用密封胶(未绘示)接合光学元件230与密封元件250，前述密封胶的特性接近玻璃，且具有较低的软化温度(例如低于700℃)。In this embodiment, the following three methods for connecting theoptical element 230 and the sealingelement 250 are listed, but it is not intended to limit the present invention. Method 1 is to heat theoptical element 230 to its glass transition temperature or softening temperature, and then mount thesealing element 250 on theouter edge 234 of theoptical element 230 . Method 2 is to first metallize theouter edge 234 of the optical element 230 (for example, to plate metal, such as titanium), and then use solder (not shown) to join theoptical element 230 and the sealingelement 250 . Method 3 is to use a sealant (not shown) to bond theoptical element 230 and the sealingelement 250 . The property of the aforementioned sealant is close to that of glass and has a lower softening temperature (eg, lower than 700° C.).

在本实施例中，列举下列二种连接承载基板210与密封元件250的方法，但并非用以限定本发明。方法1是利用连接层260连接密封元件250与承载基板210，连接层260是位于密封元件250与承载基板210之间，且其材料例如是金属或合金(例如焊料)。连接层260的形状可以对应密封元件250的横剖面形状而设计为圆形、四边形、椭圆形等，且连接层260可提高密封元件250与承载基板210间的接合力，进而提高封装整体的可靠度。具体而言，可先在承载基板210上形成焊料，之后再将已与光学元件230连接的密封元件250配置于焊料上并加热焊料。In this embodiment, the following two methods for connecting thecarrier substrate 210 and the sealingelement 250 are listed, but it is not intended to limit the present invention. Method 1 is to use theconnection layer 260 to connect the sealingelement 250 and thecarrier substrate 210 . Theconnection layer 260 is located between the sealingelement 250 and thecarrier substrate 210 , and its material is, for example, metal or alloy (such as solder). The shape of theconnection layer 260 can be designed to be circular, square, oval, etc. corresponding to the cross-sectional shape of the sealingelement 250, and theconnection layer 260 can improve the bonding force between the sealingelement 250 and thecarrier substrate 210, thereby improving the overall reliability of the package. Spend. Specifically, solder can be formed on thecarrier substrate 210 first, and then the sealingelement 250 connected to theoptical element 230 is disposed on the solder and the solder is heated.

图3绘示图2的发光二极管封装结构的一种变化型。请参照图3，方法2为先在承载基板210上形成固定在承载基板210上的固定组件270。固定组件270固定在承载基板210上的方式例如是通过焊料(未绘示)接合至承载基板210、通过胶材(未绘示)粘着至承载基板210，或是通过固定组件270与陶瓷粉末共同烧结的方式接合、或者是固定组件270与承载基板210为一体成型。然后，将已与光学元件230连接的密封元件250配置于固定组件270上。之后，以例如尖端放电(point discharge)或激光焊接(laser welding)的方式加热密封元件250与固定组件270相接的部分。固定组件270的材料可以为与密封元件250相同材料，例如铁钴镍合金或Invar不胀钢。FIG. 3 illustrates a modification of the LED package structure in FIG. 2 . Referring to FIG. 3 , method 2 is to firstly form afixing component 270 fixed on thecarrier substrate 210 on thecarrier substrate 210 . The way of fixing thefixing component 270 on thecarrier substrate 210 is, for example, bonding to thecarrier substrate 210 through solder (not shown), adhering to thecarrier substrate 210 through glue (not shown), or combining thefixing component 270 with ceramic powder. Bonding by sintering, or thefixing component 270 and thecarrier substrate 210 are integrally formed. Then, the sealingelement 250 connected with theoptical element 230 is disposed on thefixing component 270 . Afterwards, the portion where the sealingelement 250 is connected to thefixing component 270 is heated by means of, for example, point discharge or laser welding. The material of thefixing component 270 can be the same as that of the sealingelement 250 , such as iron-cobalt-nickel alloy or Invar.

图4A绘示本发明实施例的发光二极管封装结构的剖面图，图4B绘示图4A的发光二极管封装结构的一种变化型。请参照图4A，本实施例的发光二极管封装结构400包括承载基板210、凸起部410、发光二极管芯片220、光学元件230以及高导热透光液体240。此外，发光二极管封装结构400可选择性地具有密封元件250。FIG. 4A is a cross-sectional view of an LED packaging structure according to an embodiment of the present invention, and FIG. 4B is a modification of the LED packaging structure shown in FIG. 4A . Please refer to FIG. 4A , theLED packaging structure 400 of this embodiment includes acarrier substrate 210 , a raisedportion 410 , aLED chip 220 , anoptical element 230 and a highly thermally conductive light-transmittingliquid 240 . In addition, theLED packaging structure 400 can optionally have asealing element 250 .

值得注意的是，发光二极管封装结构400与图2的发光二极管封装结构200相似，差异之处仅在于发光二极管封装结构400额外具有凸起部410。因此，下述仅就两者的差异之处进行详细介绍，而两者相同之处则不再赘述。It should be noted that theLED packaging structure 400 is similar to theLED packaging structure 200 shown in FIG. Therefore, only the differences between the two will be described in detail below, and the similarities between the two will not be repeated.

凸起部410配置于承载基板210上，并具有开口OP以暴露出承载基板210。凸起部410的材料为导热材料，导热材料可以是金属或是金属合金，例如是金、银、铜、铟、钛、锌、铝、铅、锡、镍、铂、铬，或者是具有良好导热材料的复合材料，例如是陶瓷。The protrudingportion 410 is disposed on thecarrier substrate 210 and has an opening OP to expose thecarrier substrate 210 . The material of theprotruding part 410 is a thermally conductive material, and the thermally conductive material can be metal or a metal alloy, such as gold, silver, copper, indium, titanium, zinc, aluminum, lead, tin, nickel, platinum, chromium, or a metal with good Composites of heat-conducting materials, such as ceramics.

发光二极管芯片220配置于承载基板210上并位于开口OP中。凸起部410与发光二极管芯片220皆位于由光学元件230与承载基板210所构成的封闭空间S中，且高导热透光液体240可直接接触承载基板210、光学元件230、发光二极管芯片220与凸起部410的暴露于封闭空间S中的全部表面。TheLED chip 220 is disposed on thecarrier substrate 210 and located in the opening OP. Both the raisedportion 410 and theLED chip 220 are located in the enclosed space S formed by theoptical element 230 and thecarrier substrate 210, and the highly thermally conductive light-transmittingliquid 240 can directly contact thecarrier substrate 210, theoptical element 230, theLED chip 220 and thecarrier substrate 210. The entire surface of the raisedportion 410 exposed in the closed space S. As shown in FIG.

在其他实施例中，若需产生特定色光，则可增加开口OP的深度D(即增加凸起部410的厚度)，使开口OP的深度D大于发光二极管芯片220的高度(也就是使发光二极管芯片220的顶面低于凸起部410的顶面)，并在开口OP中填入荧光粉。In other embodiments, if a specific color light needs to be generated, the depth D of the opening OP can be increased (that is, the thickness of the protrudingportion 410 is increased), so that the depth D of the opening OP is greater than the height of the LED chip 220 (that is, theLED chip 220 can be made larger). The top surface of thechip 220 is lower than the top surface of the protrusion 410 ), and phosphor powder is filled in the opening OP.

开口OP截面的宽度W1与发光二极管芯片220截面的宽度W2的比值为1至1.5。值得注意的是，在本实施例中，开口OP截面的宽度W1与发光二极管芯片220截面的宽度W2是指在同一剖面时，开口OP的(最小)宽度W1与发光二极管芯片220的(最大)宽度W2。The ratio of the width W1 of the section of the opening OP to the width W2 of the section of theLED chip 220 is 1 to 1.5. It should be noted that, in this embodiment, the width W1 of the section of the opening OP and the width W2 of the section of theLED chip 220 refer to the (minimum) width W1 of the opening OP and the (maximum) width of theLED chip 220 in the same section. Width W2.

由前述可知，凸起部410贴近发光二极管芯片220的侧壁224，因此，可通过凸起部410增加发光二极管芯片220的侧壁224的导热效率。It can be seen from the foregoing that the protrudingportion 410 is close to thesidewall 224 of theLED chip 220 , therefore, the heat conduction efficiency of thesidewall 224 of theLED chip 220 can be increased through the protrudingportion 410 .

图4A绘示的凸起部410的开口OP截面的宽度W1与发光二极管芯片220截面的宽度W2的比值大于1并小于等于1.5，换言之，在发光二极管芯片220的侧壁224与凸起部410之间可存在间隙G，且粘着层F可填满于间隙G中，粘着层F的材料例如为银胶、焊锡、玻璃以及合金或是其他适合的导热材料。此外，当开口OP截面的宽度与发光二极管芯片220截面的宽度比值为大于1并小于等于1.5时，凸起部410与承载基板210例如是一体成型或是各自成型。换言之，凸起部410与承载基板210可以是同时形成，或者是各自成型后再将凸起部410组装至承载基板210上。当凸起部410与承载基板210为各自成型时，凸起部410的材料例如与承载基板210相同皆为高热导系数材料，或者是与承载基板210的材料相异的其它具有导热功能的材料，又或者是与承载基板210的材料部分相同的材料。The ratio of the width W1 of the section width W1 of the opening OP of theprotrusion 410 to the width W2 of the section of theLED chip 220 shown in FIG. 4A is greater than 1 and less than or equal to 1.5. There may be a gap G therebetween, and the adhesive layer F may fill the gap G, and the material of the adhesive layer F is, for example, silver glue, solder, glass, alloy or other suitable heat-conducting materials. In addition, when the ratio of the width of the section of the opening OP to the width of the section of theLED chip 220 is greater than 1 and less than or equal to 1.5, the protrudingportion 410 and thecarrier substrate 210 are formed integrally or separately. In other words, the protrudingportion 410 and thecarrier substrate 210 may be formed at the same time, or formed separately and then the protrudingportion 410 is assembled on thecarrier substrate 210 . When the protrudingportion 410 and thecarrier substrate 210 are formed separately, the material of the protrudingportion 410 is, for example, the same as thecarrier substrate 210 and is a material with a high thermal conductivity, or is different from the material of thecarrier substrate 210 and has other materials with thermal conductivity. , or partly the same material as that of thecarrier substrate 210 .

另外，请参照图4B，在本实施例中，可在间隙G中以及发光二极管芯片220与承载基板210之间设置粘着层280，以接合发光二极管芯片220至承载基板210以及凸起部410。粘着层280的材料例如是银胶、焊锡、玻璃以及合金或是其他适合的导热材料，因此，粘着层280可有助于提升发光二极管芯片220的导热效率。In addition, please refer to FIG. 4B , in this embodiment, anadhesive layer 280 may be provided in the gap G and between theLED chip 220 and thecarrier substrate 210 to bond theLED chip 220 to thecarrier substrate 210 and the raisedportion 410 . The material of theadhesive layer 280 is, for example, silver glue, solder, glass and alloy or other suitable heat-conducting materials. Therefore, theadhesive layer 280 can help improve the heat-conducting efficiency of theLED chip 220 .

由前述可知，在本实施例中，发光二极管芯片220可将(发光二极管芯片220于发光时所产生的)热传导至下方承载基板210，或者是通过凸起部410与高导热透光液体240接触，使热经由承载基板210与高导热透光液体240传导至发光二极管封装结构400外，以提升发光二极管芯片220的导热效率。It can be seen from the foregoing that in this embodiment, theLED chip 220 can conduct heat (generated when theLED chip 220 emits light) to theunderlying carrier substrate 210 , or contact the highly thermally conductive light-transmittingliquid 240 through the raisedportion 410 The heat is conducted to the outside of theLED packaging structure 400 through thecarrier substrate 210 and the highly thermally conductive light-transmittingliquid 240 , so as to improve the heat conduction efficiency of theLED chip 220 .

另外，在本实施例中，可在开口OP的内壁A以及承载基板210的被开口OP所暴露出的部分上形成反射层290，以反射发光二极管芯片220所产生的光线进而提高光线的利用率，反射层290的材料例如是银或是其他适于反射光线的材料。在其他未绘示的实施例中，当发光二极管芯片220截面的宽度比值为1时，发光二极管芯片220的侧壁224与凸起部410贴合。In addition, in this embodiment, areflective layer 290 can be formed on the inner wall A of the opening OP and the portion of thecarrier substrate 210 exposed by the opening OP to reflect the light generated by theLED chip 220 and improve the utilization rate of the light. , the material of thereflective layer 290 is, for example, silver or other materials suitable for reflecting light. In other unillustrated embodiments, when the width ratio of the section of theLED chip 220 is 1, thesidewall 224 of theLED chip 220 is attached to theprotrusion 410 .

图5绘示本发明实施例的发光二极管封装结构的剖面图。图6A与图6B绘示图5的发光二极管封装结构的二种变化型。FIG. 5 is a cross-sectional view of an LED packaging structure according to an embodiment of the present invention. 6A and 6B illustrate two variants of the LED package structure shown in FIG. 5 .

请参照图5，本实施例的发光二极管封装结构500包括承载基板210、垫高部510、发光二极管芯片220、光学元件230以及高导热透光液体240。此外，发光二极管封装结构500可选择性地具有密封元件250与固定组件(未绘示)。Referring to FIG. 5 , theLED packaging structure 500 of this embodiment includes acarrier substrate 210 , apad 510 , aLED chip 220 , anoptical element 230 and a highly thermally conductive light-transmittingliquid 240 . In addition, theLED packaging structure 500 may optionally have asealing element 250 and a fixing component (not shown).

值得注意的是，发光二极管封装结构500与图2的发光二极管封装结构200相似，差异之处仅在于发光二极管封装结构500额外具有垫高部510。因此，下述仅就两者的差异之处进行详细介绍，而两者相同的处则不再赘述。It should be noted that theLED packaging structure 500 is similar to theLED packaging structure 200 of FIG. Therefore, only the differences between the two will be described in detail below, and the similarities between the two will not be repeated.

垫高部510配置于承载基板210上，并具有多个沟槽T以及远离承载基板210的第一顶面512，且垫高部510的材料为导热材料。发光二极管芯片220配置于垫高部510的第一顶面512上，且垫高部510与发光二极管芯片220皆位于封闭空间S中。高导热透光液体240可直接接触承载基板210、光学元件230、发光二极管芯片220与垫高部510的暴露于封闭空间S中的全部表面，且高导热透光液体240可填满于沟槽T中。Thepadding portion 510 is disposed on thecarrier substrate 210 and has a plurality of trenches T and a firsttop surface 512 away from thecarrier substrate 210 , and the material of thepadding portion 510 is a thermally conductive material. TheLED chip 220 is disposed on the firsttop surface 512 of the raisedportion 510 , and both the raisedportion 510 and theLED chip 220 are located in the enclosed space S. As shown in FIG. The highly thermally conductive and light-transmittingliquid 240 can directly contact all surfaces of thecarrier substrate 210, theoptical element 230, theLED chip 220, and thepad 510 exposed in the enclosed space S, and the high-heat-conducting and light-transmittingliquid 240 can fill the grooves In T.

由于沟槽T可增加垫高部510与高导热透光液体240的接触面积，因此，当发光二极管芯片220产生的热传导至垫高部510时，可通过高导热透光液体240的流动移除传导至垫高部510的热，进而增加垫高部510的导热效率。Since the trench T can increase the contact area between thepad 510 and the high thermal conductivity light-transmittingliquid 240 , when the heat generated by theLED chip 220 is conducted to thepad 510 , it can be removed by the flow of the high thermal conductivity light-transmittingliquid 240 The heat conducted to the raisedportion 510 further increases the heat conduction efficiency of the raisedportion 510 .

密封元件250具有远离承载基板210的第二顶面252，垫高部510的第一顶面512与承载基板210之间的距离H1大于等于密封元件250的第二顶面252与承载基板210之间的距离H2。如此一来，可通过垫高部510垫高发光二极管芯片220，以避免发光二极管芯片220所发出的光线被密封元件250阻挡，进而提升发光二极管封装结构500的出光效率(light extractionefficiency)。The sealingelement 250 has a secondtop surface 252 away from thecarrier substrate 210 , the distance H1 between the firsttop surface 512 of the raisedportion 510 and thecarrier substrate 210 is greater than or equal to the distance between the secondtop surface 252 of the sealingelement 250 and thecarrier substrate 210 The distance between H2. In this way, theLED chip 220 can be raised by the raisedportion 510 to prevent the light emitted by theLED chip 220 from being blocked by the sealingelement 250 , thereby improving the light extraction efficiency of theLED packaging structure 500 .

请参照图6A，在本实施例中，垫高部510包括底部514与凸起部516，凸起部516位于底部514上，且凸起部516具有开口OP以暴露出底部514，发光二极管芯片220配置于底部514上并位于开口OP中。开口OP截面的宽度W3与发光二极管芯片220截面的宽度W4比值例如为1至1.5。值得注意的是，由于凸起部516贴近发光二极管芯片220的侧壁224，故可通过凸起部516增加发光二极管芯片220的侧壁224的导热效率。Please refer to FIG. 6A. In this embodiment, the raisedportion 510 includes a bottom 514 and a raisedportion 516. The raisedportion 516 is located on the bottom 514, and the raisedportion 516 has an opening OP to expose the bottom 514. TheLED chip 220 is disposed on the bottom 514 and located in the opening OP. The ratio of the width W3 of the section of the opening OP to the width W4 of the section of theLED chip 220 is, for example, 1 to 1.5. It should be noted that since the protrudingportion 516 is close to thesidewall 224 of theLED chip 220 , the heat conduction efficiency of thesidewall 224 of theLED chip 220 can be increased through the protrudingportion 516 .

图6A绘示的开口OP截面的宽度W3与发光二极管芯片220截面的宽度W4比值为大于1并小于等于1.5。换言之，发光二极管芯片220与凸起部516之间存在有间隙G，且粘着层F可填满于间隙G中，粘着层F的材料例如为银胶、焊锡、玻璃以及合金或是其他适合的导热材料。此时，可藉凸起部516与高导热透光液体240接触，来提升发光二极管芯片220的侧壁224的导热效率。底部514与凸起部516例如是一体成型。The ratio of the width W3 of the section of the opening OP to the width W4 of the section of theLED chip 220 shown in FIG. 6A is greater than 1 and less than or equal to 1.5. In other words, there is a gap G between the light-emittingdiode chip 220 and the protrudingportion 516, and the adhesive layer F can fill the gap G. The material of the adhesive layer F is, for example, silver glue, solder, glass, alloy or other suitable materials. thermally conductive material. At this time, the heat conduction efficiency of thesidewall 224 of theLED chip 220 can be improved by the contact of the protrudingportion 516 with the highly heat-conductive light-transmittingliquid 240 . The bottom 514 and the protrudingportion 516 are integrally formed, for example.

另外，请参照图6B，在本实施例中，可在间隙G中以及发光二极管芯片220与底部514之间设置粘着层280，以接合发光二极管芯片220至底部514以及凸起部516。粘着层280的材料例如是银胶、焊锡、玻璃以及合金或是其他适合的导热材料，因此，粘着层280可有助于提升发光二极管芯片220的导热效率。In addition, please refer to FIG. 6B , in this embodiment, anadhesive layer 280 may be provided in the gap G and between theLED chip 220 and the bottom 514 to bond theLED chip 220 to the bottom 514 and the raisedportion 516 . The material of theadhesive layer 280 is, for example, silver glue, solder, glass and alloy or other suitable heat-conducting materials. Therefore, theadhesive layer 280 can help improve the heat-conducting efficiency of theLED chip 220 .

另外，在本实施例中，可在开口OP的内壁A以及底部514的被开口OP所暴露出的部分上形成反射层290，以反射发光二极管芯片220所产生的光线进而提高光线的利用率，反射层290的材料例如是银或是其他适于反射光线的材料。In addition, in this embodiment, areflective layer 290 may be formed on the inner wall A of the opening OP and the portion of the bottom 514 exposed by the opening OP to reflect the light generated by theLED chip 220 to improve the utilization rate of the light. The material of thereflective layer 290 is, for example, silver or other materials suitable for reflecting light.

在其他未绘示的实施例中，开口OP截面的宽度W3与发光二极管芯片220截面的宽度W4比值可为1，换言之，发光二极管芯片220与凸起部516贴合。此时，凸起部516可直接将发光二极管芯片220于发光时所产生的热传导至承载基板210，并经由承载基板210传导至发光二极管封装结构外，以提升发光二极管芯片220的侧壁224的导热效率。In other unillustrated embodiments, the ratio of the width W3 of the section of the opening OP to the width W4 of the section of theLED chip 220 may be 1. In other words, theLED chip 220 is attached to theprotrusion 516 . At this time, the raisedportion 516 can directly conduct the heat generated by theLED chip 220 to thecarrier substrate 210 when it emits light, and conduct it to the outside of the LED packaging structure through thecarrier substrate 210, so as to enhance the heat of theside wall 224 of theLED chip 220. Thermal efficiency.

综上所述，本发明的高导热透光液体填满于封闭空间中，因此，高导热透光液体可直接接触承载基板、光学元件与发光二极管芯片的暴露于封闭空间中的全部表面。如此一来，发光二极管芯片不仅可通过承载基板提升其底部的导热效率，还可通过高导热透光液体提升其侧壁与顶面的导热效率。本发明采用密封元件连接光学元件与承载基板，以将光学元件固定在承载基板上。此外，本发明利用贴近发光二极管芯片的侧壁的凸起部来增加发光二极管芯片的侧壁的导热效率。另外，本发明的垫高部可垫高发光二极管芯片，以避免发光二极管芯片所发出的光线被密封元件阻挡，进而提升发光二极管封装结构的出光效率。To sum up, the high thermal conductivity and light-transmitting liquid of the present invention is filled in the closed space. Therefore, the high heat-conducting and light-transmitting liquid can directly contact all surfaces of the carrier substrate, optical elements and LED chips exposed in the closed space. In this way, the light-emitting diode chip can not only improve the heat conduction efficiency of its bottom through the carrier substrate, but also improve the heat conduction efficiency of its side wall and top surface through the highly heat-conductive light-transmitting liquid. The invention adopts the sealing element to connect the optical element and the carrying substrate to fix the optical element on the carrying substrate. In addition, the present invention utilizes the protruding portion close to the sidewall of the LED chip to increase the heat conduction efficiency of the sidewall of the LED chip. In addition, the raised part of the present invention can raise the LED chip to prevent the light emitted by the LED chip from being blocked by the sealing element, thereby improving the light extraction efficiency of the LED packaging structure.

虽然本发明已以实施例披露如上，然其并非用以限定本发明，任何所属技术领域中普通技术人员，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，故本发明的保护范围当视所附的权利要求界定者为准。Although the present invention has been disclosed above with embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the appended claims.

Claims (32)

1. package structure for LED comprises:

Bearing substrate;

At least one light-emitting diode chip for backlight unit is disposed on the said bearing substrate, and has active layer;

Optical element is disposed on the said bearing substrate, form enclosure space between said optical element and the said bearing substrate, and said light-emitting diode chip for backlight unit is arranged in said enclosure space; And

High heat conduction light-transmissive fluid is filled in the said enclosure space,

Wherein with respect to the light of the dominant wavelength that said light-emitting diode chip for backlight unit sent, the light transmittance of said high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of said high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.

2. package structure for LED as claimed in claim 1 also comprises potted component, and said potted component connects said optical element outer rim and said bearing substrate, and is positioned at outside the said enclosure space.

3. package structure for LED as claimed in claim 2 also comprises fixation kit, and said fixation kit is disposed on the said bearing substrate, and is connected between said potted component and the said bearing substrate.

4. package structure for LED as claimed in claim 2 also comprises articulamentum, and articulamentum is between said potted component and said bearing substrate, and the material of said articulamentum is a metal or alloy.

5. package structure for LED as claimed in claim 1; Wherein said high heat conduction light-transmissive fluid is non-conductive liquid, and the said bearing substrate of the direct contact of said high heat conduction light-transmissive fluid, said optical element and said light-emitting diode chip for backlight unit are exposed to all surfaces in the enclosure space.

6. package structure for LED as claimed in claim 1, wherein said high heat conduction light-transmissive fluid contains at least one freeze proof material.

7. package structure for LED as claimed in claim 1, wherein said high heat conduction light-transmissive fluid is doped with a plurality of suspended particles.

8. package structure for LED as claimed in claim 1, the conductive coefficient of wherein said bearing substrate is greater than 25W/mK.

9. package structure for LED as claimed in claim 1; Wherein said optical element is the arc optical element; Said optical element has groove, and said bearing substrate is disposed on the open end of said groove, to seal said groove and to form said enclosure space.

10. package structure for LED as claimed in claim 1 also comprises light conversion layer, and said light conversion layer is positioned at going out on the light path of said light-emitting diode chip for backlight unit.

11. package structure for LED as claimed in claim 1 also comprises isolation layer, many leads and said active layer that it coats a plurality of connection pads of said light-emitting diode chip for backlight unit, electrically connects with a plurality of connection pads of said light-emitting diode chip for backlight unit respectively.

12. package structure for LED as claimed in claim 11, wherein said isolation layer directly pastes to said light-emitting diode chip for backlight unit, and said isolation layer is a light conversion layer.

13. package structure for LED as claimed in claim 12, the material of wherein said high heat conduction light-transmissive fluid comprises electric conducting material.

14. a package structure for LED comprises:

Bearing substrate;

At least one lug boss is disposed on the said bearing substrate, and has opening exposing said bearing substrate, and the material of said lug boss is a Heat Conduction Material;

At least one light-emitting diode chip for backlight unit is disposed on the said bearing substrate and is arranged in said opening, and the width ratio in the width of said opening section and said light-emitting diode chip for backlight unit cross section is 1 to 1.5;

Optical element is disposed on the said bearing substrate, forms enclosure space between said optical element and the said bearing substrate, and said lug boss and said light-emitting diode chip for backlight unit are arranged in said enclosure space; And

High heat conduction light-transmissive fluid is filled in the said enclosure space,

Wherein with respect to the light of the dominant wavelength that said light-emitting diode chip for backlight unit sent, the light transmittance of said high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of said high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.

15. package structure for LED as claimed in claim 14 also comprises potted component, said potted component connects said optical element outer rim and said bearing substrate, and is positioned at outside the said enclosure space.

16. package structure for LED as claimed in claim 15 also comprises fixation kit, said fixation kit is disposed on the said bearing substrate, and is connected between said potted component and the said bearing substrate.

17. package structure for LED as claimed in claim 14; Wherein when the width ratio in the width of said opening section and said light-emitting diode chip for backlight unit cross section be greater than 1 and smaller or equal to 1.5 the time; There is the gap between the sidewall of said light-emitting diode chip for backlight unit and the said lug boss; And said package structure for LED also comprises adhesion coating, said adhesion coating be arranged in the said gap and said light-emitting diode chip for backlight unit and said bearing substrate between.

18. package structure for LED as claimed in claim 14 also comprises the reflector, said reflector be disposed at said opening inwall and said bearing substrate by on the part that said opening exposed.

19. package structure for LED as claimed in claim 14, wherein said Heat Conduction Material are metal, metal alloy or pottery.

20. package structure for LED as claimed in claim 14; Wherein said high heat conduction light-transmissive fluid is non-conductive liquid, and said high heat conduction light-transmissive fluid directly contacts all surfaces in the enclosure space that is exposed to of said bearing substrate, said optical element, said light-emitting diode chip for backlight unit and said lug boss.

21. package structure for LED as claimed in claim 14; Wherein said optical element is the arc optical element; Said optical element has groove, and said bearing substrate is disposed on the open end of said groove, to seal said groove and to form said enclosure space.

22. package structure for LED as claimed in claim 14, the conductive coefficient of wherein said bearing substrate is greater than 25W/mK.

23. a package structure for LED comprises:

Bearing substrate;

At least one bed hedgehopping portion is disposed on the said bearing substrate, has at least one groove and away from first end face of said bearing substrate, and the material of said bed hedgehopping portion is a Heat Conduction Material;

At least one light-emitting diode chip for backlight unit is disposed on said first end face of said bed hedgehopping portion;

Optical element is disposed on the said bearing substrate, forms enclosure space between said optical element and the said bearing substrate, and said bed hedgehopping portion and said light-emitting diode chip for backlight unit are arranged in said enclosure space; And

High heat conduction light-transmissive fluid is filled in the said enclosure space, and is filled in the said groove,

Wherein with respect to the light of the dominant wavelength that said light-emitting diode chip for backlight unit sent, the light transmittance of said high heat conduction light-transmissive fluid is greater than 80%, and the conductive coefficient of said high heat conduction light-transmissive fluid is greater than the conductive coefficient of epoxy resin.

24. package structure for LED as claimed in claim 23; Also comprise potted component; Said potted component connects said optical element outer rim and said bearing substrate; And be positioned at outside the said enclosure space, said potted component has second end face away from said bearing substrate, and said first end face of said bed hedgehopping portion and the distance between the said bearing substrate are more than or equal to said second end face of said potted component and the distance between the said bearing substrate.

25. package structure for LED as claimed in claim 24 also comprises fixation kit, said fixation kit is disposed on the said bearing substrate, and is connected between said potted component and the said bearing substrate.

26. package structure for LED as claimed in claim 23; Wherein said bed hedgehopping portion comprises bottom and lug boss; Said boss is on said bottom; And said lug boss has opening to expose said bottom, and said light-emitting diode chip for backlight unit is disposed on the said bottom and is arranged in said opening.

27. package structure for LED as claimed in claim 26, the width ratio in the width of wherein said opening section and said light-emitting diode chip for backlight unit cross section is 1 to 1.5.

28. package structure for LED as claimed in claim 27; Wherein when the width ratio in the width of said opening section and said light-emitting diode chip for backlight unit cross section be greater than 1 and smaller or equal to 1.5 the time; There is the gap between the sidewall of said light-emitting diode chip for backlight unit and the said lug boss; And said package structure for LED also comprises adhesion coating, said adhesion coating be arranged in the said gap and the bottom of said light-emitting diode chip for backlight unit and said bed hedgehopping portion between.

29. package structure for LED as claimed in claim 26 also comprises the reflector, said reflector be disposed at said opening inwall and said bottom by on the part that said opening exposed.

30. package structure for LED as claimed in claim 23; Wherein said high heat conduction light-transmissive fluid is non-conductive liquid, and said high heat conduction light-transmissive fluid directly the said bearing substrate of contact, said optical element, said light-emitting diode chip for backlight unit and said bed hedgehopping portion be exposed to all surfaces in the said enclosure space.

31. package structure for LED as claimed in claim 23; Wherein said optical element is the arc optical element; Said optical element has groove, and said bearing substrate is disposed on the open end of said groove, to seal said groove and to form said enclosure space.

32. package structure for LED as claimed in claim 23, the conductive coefficient of wherein said bearing substrate is greater than 25W/mK.

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