CN101824606A - Vertical shower type MOCVD reactor - Google Patents

Abstract

The invention discloses a vertical shower type metal organic chemical vapor deposition (MOCVD) reactor, which comprises a reaction chamber, a shower head on the top of the reaction chamber, cooling water inlet and outlet of the shower head, substrate holders at the bottom of the reaction chamber, a heater and a gas outlet, wherein a gas inlet for inputting the reaction gas is formed in the shower head; the vertical shower type MOCVD reactor is characterized in that more than three independent regions are formed in the cavity of the shower head at intervals; each independent region is provided with an independent gas inlet; a rotating shaft is penetrated through the axial centre of the shower head; the shower head is in linkage with the rotating shaft; and the plurality of substrate holders are relatively isolated and annularly arranged at the bottom of the reaction chamber. Due to the application of the technical scheme of the invention, the reaction gases are isolated and showered in sequence so as to effectively eliminate the gaseous-phase parasitic reaction; and meanwhile the tail gas after the reaction can quickly flow off through the gap of each substrate holder to be discharged from the reactor; therefore, the turbulence effect of the accumulated tail gas on the reaction gas is effectively eliminated to improve the growth quality of an epitaxial wafer and make the realization of infinitely increasing the wafer loading capacity possible.

Description

A kind of vertical shower type MOCVD reactor

Technical field

The present invention relates to a kind of semiconductor film film deposition apparatus, refer to a kind of new vertical shower type MOCVD reactor and spray header thereof and substrate bracket structure especially.Purpose is by the flowing-path of pilot-gas in reactor, and gas flow rate, temperature and the reactant concn that makes substrate top be uniform distribution all, thereby obtains that crystalline network is complete, thickness and the uniform thin film deposition of component.

Background technology

Metal organic chemical vapor deposition (being MOCVD, Metalorganic Chemical VaporDeposition) is a gordian technique of preparation compound semiconductor film.It utilizes than volatile organic matter such as Ga (CH₃)₃Source reactant Deng as more difficult evaporable atoms metal is carried in the reactor by carrier gas, with NH₃, AsH₃React in hydride, on the substrate of heating, generate films such as GaN, GaAs, be used for microelectronics or photoelectric device.The MOCVD system generally comprises: (1) source supply system; (2) gas transport system; (3) reaction chamber; (4) heating system; (5) exhaust treatment system; (6) Controlling System; (7) wafer clamping and placing system.Usually said MOCVD reactor generally comprises reaction chamber, heating system and inlet mouth and air outlet.According to the relative direction of main air stream and substrate, the MOCVD reactor mainly is divided into two big classes: (1) main air stream along continuous straight runs flows and is parallel to the horizontal reactor that is called of substrate; (2) main air stream vertically flow and the vertical impact substrate be called rectilinear reactor.Two kinds of modern commercial MOCVD reactor-planetary and vertical shower types can be considered as respectively developing from horizontal and rectilinear reactor.

One of important indicator of film preparation is exactly the homogeneity of its thickness and component.In the MOCVD technology, grow the uniform large area film material of thickness and component, the substrate speed of growth and the reactant concn that the arrives substrate uniformity of should trying one's best everywhere.This just requires to have uniform flow field, temperature field and distribution of concentration near the substrate surface, and the substrate top should be in the laminar region, does not have any type of eddy current, and the substrate top has big thermograde, fresh reactant should be able to arrive substrate top each point simultaneously.

The subject matter of horizontal reactor (horizontal reactor) be reactant concn along journey loss, thermal convection vortex and wall effect; cause the front and back of film thickness inhomogeneous easily; need to be overcome with the method for complexity; usually only be used for being not suitable for industrial large-scale production in the testing laboratory.And planetary reactor (planetary reactor) adopts radial flow to eliminate wall effect as the improved form of horizontal, obtains the even of concentration by pallet revolution and substrate from transferring, and can carry out large-scale production.But because reactant concn inevitable along the journey loss, when the pallet diameter further enlarged, owing to constantly heated in the gas flow, heat was appeared in one's mind to resemble and is begun aggravation, does not utilize the growth of monocrystal thin films, and the non-uniformity problem of the film of being grown will be more outstanding.Although planetaryly use vertical multiple import to come pre-reaction between the inhibited reaction thing at inlet section, but for this situations that needs the high reactivity reactant to participate in such as growing AINs, because the constructional feature of reactor itself, its pre-reaction still is difficult to be suppressed, and the film quality that grows out is low.

In general, rectilinear reactor (vertical reactor) can obtain better thin film deposition than horizontal reactor, and reason mainly contains two aspects: the one, and can utilize jet impulse above substrate, to produce stagnation flow (stagnation flow); The 2nd, can utilize the pallet rotation to produce a kind of pump efficiency of top gas that attracts and answer (von pump effect).The two can produce two-dimentional rotational symmetry and flow, and suppresses the thermal convection vortex, particularly forms than even velocity, temperature and concentration boundary layer above substrate.

Traditional vertical reactor develops into two kinds of modern types: vertical shower type (showerhead) and high speed rotating plate formula (RDR).The principal feature of vertical shower type is to adopt spray header and spout closely, with reactant gases artificial be evenly distributed to the substrate top, to arrive above the substrate reacting gas concentration of (outside the frictional belt) each point basic identical thereby make.Reactant gases passes the frictional belt and arrives substrate surface again by the concentration diffusion.But, owing to all reactant gasess that spray into directly over pallet all must flow to tray edge, discharged by the outlet that is arranged in reactor side or bottom, the reactant gases that sprays in the pallet center is obviously different with the distance that the reactant gases that sprays at the tray edge place is flowed through again.Because the resultant tail gas of center can not in time be discharged, therefore, the concentration distribution of this reactor is still uneven in essence.When the wafer number of pallet enlarged-diameter, growth increases, this ununiformity will be exaggerated.

The high speed rotating plate formula utilizes the pump efficiency of pallet high speed rotating generation should suppress the convection current vortex, obtains substrate top boundary layer thickness uniformly, supplies with thereby make substrate top each point obtain uniform particle concentration.But the growth temperature of MOCVD is all very high, the rotation of high temperature pallet, and itself has just proposed very high requirement to manufacturing technology; Moreover, in actually operating, also can run into deviation is radially arranged, rotation right alignment control difficulty, when rotating speed strengthens, also may cause the three-dimensional flow that ideal two dimension axially symmetric flow thickens, cause the flow unstability and the even problem of reduction.

Although the import (mode that vertical shower type welds by double-deck spout of separating that adopts is also arranged on the above-mentioned DESIGN OF REACTOR, realized the gas circuit separation between densely covered spout), suppressed the generation of pre-reaction to a certain extent, but when growing AIN, AlGaN etc., because the adjacent ports close together, the effect of the film that grows out is still good inadequately.In the recent period, vector current (the vectored flow epitaxy) reactor that Britain EMF company produces, low speed rotation by sectional radial spray of each reactant and pallet, reduced the generation of pre-reaction to greatest extent, grown high-quality AlN material, but this reactor is faced with the difficulty that the pallet diameter increases equally.

As seen, flourish along with LED industry in recent years will be increasing to the demand of epitaxial wafer, and the large-scale production of high-quality material is had higher requirement to the MOCVD reactor.And the leeway that MOCVD reactor now all is significantly improved is also more urgent to the DESIGN OF REACTOR of novel expandable type.

The relevant patent of existing MOCVD reactor, as " a kind of horizontal reactor structure that is used for vapour deposition " (application number 200310108793.0), " the double-deck gas tip that is used for metal organic chemical vapor deposition equipment " (application number 200410017471.X), " a kind of vertical shower type reactor that goes out on enterprising " (patent No. ZL 200720040098.9), " the MOCVD reaction chamber of a kind of horizontal tangential inlet, central vertical outlet " (application number 200810122991.5) etc.

Summary of the invention

Defective at above-mentioned prior art existence, purpose of the present invention aims to provide a kind of vertical shower type MOCVD reactor, with its distinctive spray header and substrate bracket structure, prevent the generation of pre-reaction, realize the growth of high quality compound semiconductor materials, eliminate the ununiformity of thickness and component between each substrate, realize the repeating unit growth, and then the capacity of infinite expanding reactor.

Above-mentioned purpose of the present invention will be achieved through the following technical solutions:

A kind of vertical shower type MOCVD reactor, comprise reaction chamber, be located at reactor top spray header and water coolant import and export thereof, be located at the holder of reaction chamber substrate of bottom portion, well heater and air outlet, the inlet mouth that is used to import reactant gases is located within the spray header, it is characterized in that: described spray header cavity is separated by and is formed three above isolated areas, and each isolated area is respectively equipped with separately independently inlet mouth; The axial centre of spray header runs through and is provided with a rotating shaft, spray header and rotating shaft interlock; The isolated relatively reaction chamber bottom that is arranged in the form of a ring of a plurality of substrate brackets.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein this spray header is a disc-shape, its spray header cavity is divided into upper and lower two-layer, spray chamber, upper strata is separated by by dividing plate and forms three above isolated areas, and each isolated area end face offers independently inlet mouth respectively; Lower floor spray chamber is an entity structure, and connects spray chamber, upper strata thereon and reaction chamber is provided with densely covered jet pipe.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein spray chamber in this spray header upper strata is separated by by dividing plate and forms four segmental isolated areas.And form two relative two four segmental isolated areas that volume is bigger in addition of volume according to the differential responses gas and the volume proportion of carrier gas, the volume of these four isolated areas equates in twos, is intervally arranged.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein the jet pipe distribution density in this spray header lower floor spray chamber is greatly about 10/cm²About, the internal diameter of jet pipe is greatly about about 1mm.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein the position between each ring of this spray header correspondence below substrate bracket is provided with the annular screen of the cylinder bodily form that is used to cut off gas.The quantity of this annular screen is lacked one corresponding to the number of rings of arranging of substrate bracket.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein this rotating shaft periphery is provided with the sleeve pipe of four layers of corresponding differential responses gas, and described spray header cavity is separated by and is formed four isolated areas, and offers on the interface of sleeve bottom and spray header cavity corresponding to four separate fan annular air scoops of each sleeve pipe.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein this spray header arrives the vertical distance range of the substrate bracket of placing substrate between 5mm～30mm.

Further, aforesaid a kind of vertical shower type MOCVD reactor, wherein this well heater one by one correspondence be located in each substrate bracket and the parallel master controller that is connected to.Wherein this substrate bracket comprises cannulated sleeve, is located at the graphite pallet of cannulated sleeve end face and is located at the interior well heater of cannulated sleeve, and the graphite support panel surface is provided with the groove that is used to place substrate.

Implement technical scheme of the present invention, its advantage is:

Vertical shower type MOCVD reactor of the present invention, the cavity of spray header is separated by forms a plurality of isolated areas, before arriving substrate in the narrow and small nearly coupled room, no matter be laterally or vertically, various reaction source particles all are isolated mutually, III, V/II, VI clan source particle are only got on the substrate and are just mixed mutually, thereby have eliminated the gas phase parasitic reaction; Simultaneously, the graphite substrate holder is isolated annular row and is distributed in the spray header below, reacted tail gas can be rapidly flows away from the space of each substrate bracket, be discharged from reactor, can effectively eliminate and gather not diffusing tail gas the effect of reactant gases flow-disturbing, improved the growth quality of epitaxial wafer, and for realizing that infinitely increasing the load capacity provides possibility.

For a kind of vertical shower type MOCVD reactor of the present invention being easier to understand the practicality of its substantive distinguishing features and institute's tool thereof, below constipation close accompanying drawing the present invention's one specific embodiment be described in further detail.But following description and explanation about embodiment do not constitute any limitation protection domain of the present invention.

Description of drawings

Fig. 1 is the main pseudosection of one embodiment of the invention;

Fig. 2 is the structure cross-sectional schematic of air inlet duct part embodiment illustrated in fig. 1;

Fig. 3 is the cross-sectional schematic that isolated substrate bracket embodiment illustrated in fig. 1 is arranged;

Fig. 4 is the temperature field of substrate bracket top in the invention process post-reactor and the simulate effect figure of velocity vector field.

The implication of each Reference numeral is as follows among the figure:

1 to 4～annular entrance, 5～solid spindle, 6～upper strata spray chamber, 7～annular screen, 8～jet pipe, 9～entrance of cooling water, 10～cooling water outlet, 11～groove, 12～substrate bracket, 13～cannulated sleeve, 14～well heater, 15～venting port, 16～dividing plate, 17 to 20～air inlet duct.

Embodiment

The present invention has designed the MOCVD reactor of a kind of novel rotary spray head-isolated substrate bracket, has particularly improved the spray header and the substrate bracket structure that are used for this reactor.The spray header rotation of this reactor, reactant gases is from different zone ejections; Each substrate bracket is isolated, is distributed in the spout below ringwise, and substrate bracket is fixing not to be rotated.The present invention can effectively prevent the generation of pre-reaction, realizes the growth (as AlN, AlGaN etc.) of high quality compound semiconductor materials, eliminates the ununiformity of thickness and component between each substrate, realizes the repeating unit growth, and then the capacity of infinite expanding reactor.

This vertical shower type MOCVD reactor has mainly comprised reaction chamber, spray header, substrate bracket, heating system, inlet and outlet mouth and water coolant import and export etc.Reaction chamber is a cylinder shape, wall adopting quartz glass or stainless steel, and the spray header of its top is a disc-shape, is divided into the sector region more than three, each zone feeds different reactant gas source respectively by the barrier partitions in the spray header, prevents premixing reaction.The solid shaft that runs through whole spray chamber and be positioned at the center is rotated by driven by motor, and by magnetic current sealing.Be the ring-type air inlet duct on every side, on the interface in ring-type air inlet duct and spray chamber, have the pairing fan annular entrance in each fan-shaped territory.Whole spray chamber is divided into two-layer up and down, and gas enters spray chamber, upper strata by the fan annular entrance, and here gas slowly is full of whole top area, plays a buffering, the steadily effect of gas.There are countless densely covered spouts on the upper strata at the bottom of the spray chamber, and gas enters the jet pipe that runs through whole lower floor spray chamber by these spouts, and finally by the spray header ejection, enters reaction chamber.Substrate and spray header distance are near, owing to be nearly coupling spray, lower floor spray side, chamber has annular into and out of tank, is the passage of water coolant, and effect is a chilling spray head wall.In the spray chamber, be provided with movable screen between the spray zone of each lining papers collet correspondence, but automatic lifting is used for intercepting gas.Its effect is, the large vol type during testing and measuring technology, often only needs long a slice epitaxial wafer in the early stage, and put down screen this moment, and it is just enough to grow with interior ring gas, can save source of the gas like this; Perhaps in a small amount of epitaxial wafer of growth, also can put down screen.

Each reactant gases flows into vertical pipeline by each annular entrance in the work, enter in its segmental spray chamber by separately air inlet duct again, divided circular spray header is by the solid shaft driven rotary, gas enters reaction zone by being positioned at the evenly densely covered spout ejection of spray header lower surface, arrives the top that each places the substrate bracket of substrate.Because spray header rotation, each substrate bracket top right gas zones constantly change, therefore required III, V/II, VI clan source particle is alternately to get to on-chiply, is reacted into key on high temperature substrates, deposit the thin-film material of required type, be similar to atom laminar extension.Because the rotary-jet of the spray header of above-mentioned zoned format, in the narrow and small nearly coupled room before bottom substrate, no matter be laterally or vertically, various reaction source particles all are isolated mutually, III, V/II, VI clan source particle are only got on the substrate and are just mixed mutually.So this reactor has been eliminated the gas phase parasitic reaction, can grow materials such as the higher AlN of quality, AlGaN.

The graphite substrate holder is the below that isolated annular row is distributed in spray header, and rotational structure is not set.Substrate bracket is supported by the quartzy cannulated sleeve of plating boron nitride, quartzy when high temperature thermal conductivity lower, the boron nitride of high-reflectivity in addition can better reduce the calorific loss of well heater.Tray area is slightly larger than substrate, the interior fluted substrate that is used for placing of holder.Well heater can adopt induction type or resistance-type, places in the cannulated sleeve, and substrate bracket is heated.

With static the arranging of the isolated annular of substrate bracket, rather than as all substrates are placed on the big substrate bracket in the reactor, She Ji benefit has three aspects like this: the one, make on-chip concentration more even.When reactant gases after finishing deposition above the substrate, the tail gas of reaction can be rapidly flows away from the peripheral clearance of substrate bracket, is discharged by the outlet of reactor below.No longer as in the common response device, tail gas continues radial flow and has influence on other substrates on big pallet.Become single isolated little pallet face by whole big pallet face, originally the on a large scale radial undulation of reactant concn along the pallet center to the edge just no longer exists, and guaranteed the high quality of film product; The 2nd, make the temperature of substrate surface more even.The homogeneity of temperature is very important in the growth, and for example in the grown quantum trap, growth temperature directly influences the wavelength of LED.When the tray area of commercial reactor enlarges, for guaranteeing the temperature uniformity of whole card, each have their own method adds the locus of pining for by adjusting ruhmkorff coil as induction type and obtains, and adds the difference input of pining for then generally by the subregion electric power in resistance-type and obtains.But, when the pallet diameter increases to a certain degree, regulate and the difficulty of control just strengthens.Adopt the precision of zonule temperature control in the single wafer scope just higher; The 3rd, because the spray header rotation, by Newton's third law, effect is consistent with the pallet rotation, but it has broken away from the problem of the difficulty in process of high-temperature component rotation.In addition, after arranging like this, compare, have capacity usage ratio more efficiently, and each substrate bracket itself is exactly unit independently, increase installed capacity and just increased periodically unit with the big calorific loss of big area pallet.

So, after reactant gases enters novel reactor, under the situation that does not have the gas phase parasitic reaction substantially, arrive each substrate top, realize the layer growth of thin-film material along with the rotation of spray header, because the residing environment of each substrate reaches unanimity, met the demand of industrial repeatability growth in enormous quantities again.

Further specify apparatus structure of the present invention and principle of work below in conjunction with accompanying drawing.

As shown in Figure 1, III/II clan source gas by annular entrance 2 by eccentric circular ringair inlet duct 18 shown in Figure 2 enter the spray chamber sector region 2.; V/VI clan source gas enters by annular entrance 4, byair inlet duct 20 and sprays cavity region 4.; 1., 3. carrier gas enters two less zones of spray chamber then by 1,3 annular entrance byair inlet duct 17,19, and four sector regions are separated by by dividing plate 16.The spray chamber is divided two-layer up and down, and gas is assembled in spray chamber, upper strata 6, plays even buffered effect, which is provided with an annular screen 7, works to cut off gas.Lower floor gathers, and (jet pipe density is about 10～1000/cm to full jet pipe 8²), the gas that connects the upper strata enters reaction chamber by spray header.Have the import and export groove of water coolant on the chow ring of lower floor, 9 is entrance of cooling water, and 10 is cooling water outlet, is used for chilling spray head wall.Run through the solid spindle 5 that sprays the chamber and link to each other with external motor (not shown herein), drive whole spray cavity rotation, and by magnetic current sealing (not shown herein).Graphite substrate holder 12 arranges in the form of a ring along circumference, in the groove 11 that is used for placing substrate is arranged, substrate bracket is supported by cannulated sleeve 13, in be provided with well heater 14.The quartz material of lower thermal conductivity under the preferred high temperature of sleeve, internal surface is good to coat high-reflectivity coating such as boron nitride.Each well heater is unified parallel control.When reactor capacity becomes big, only need to increase outer ring substrate bracket quantity and get final product, embodiment illustrated in fig. 3 is 20 machines.

When reactant gases after the spray header ejection of rotation, reactant gases is separated by the carrier gas of two zone ejections, has suppressed the generation of pre-reaction, reactant gases is alternately got to and is reacted into key on the substrate along with the rotation of spray header, finishes the deposition of thin-film material.As shown in Figure 4, be the temperature field and the velocity vector field simulate effect figure of this reactor linings collet top, visible reacted tail gas flows away from the gap of each substrate bracket rapidly, makes between each substrate no longer to influence each other, the high quality of film when having guaranteed the large vol growth.

In addition to the implementation, vertical shower type MOCVD reactor of the present invention also has multiple different embodiment.For example, the quantity of this annular screen 7 is not limited to one, and along with substrate bracket the arrange expansion of quantity in below can further be set up, its quantity is no more than the substrate bracket number of rings of arranging and subtracts one; Above-mentioned inlet mouth also is not limited to the structure formation that embodiment ring ring is nested, and also can set up separately separately, towards different; And according to the difference of compound vapor deposition reaction source of the gas, the compartment in this spray chamber not only can be four, can also be unnecessary four or only be three, determine by the activity of reactant gas source and source of the gas itself.So the foregoing description explanation does not constitute any limitation protection scope of the present invention only for the more representative concrete exemplary applications of the present invention.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.

Claims (9)

Translated fromChinese

1.一种垂直喷淋式MOCVD反应器，包括反应室、设于反应室顶部的喷淋头及其冷却水进、出口、设于反应室底部的衬底托、加热器及出气口，用于输入反应气体的进气口设于喷淋头之内，其特征在于：所述喷淋头腔体相隔形成三个以上独立区域，各独立区域分别设有各自独立的进气口；喷淋头的轴向中心贯穿设有一转轴，喷淋头与转轴联动；复数个衬底托相对孤立呈环状排布于反应室底部。1. a kind of vertical spray type MOCVD reactor, comprise reaction chamber, be located at the shower head and its cooling water inlet and outlet of reaction chamber top, be located at the substrate holder, heater and gas outlet of reaction chamber bottom, use The air inlet for inputting reaction gas is arranged in the shower head, and it is characterized in that: the chamber of the shower head is separated to form more than three independent areas, and each independent area is provided with its own independent air inlet; A rotating shaft runs through the axial center of the head, and the shower head is linked with the rotating shaft; a plurality of substrate holders are relatively isolated and arranged in a ring at the bottom of the reaction chamber.2.根据权利要求1所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述喷淋头为圆盘形状，其喷淋头腔体分为上、下两层，所述上层喷淋腔由隔板相隔形成三个以上独立区域，各独立区域项面分别开设有独立的进气口；所述下层喷淋腔为实体结构，并于其上贯通上层喷淋腔及反应室设有密布的喷管。2. a kind of vertical spray type MOCVD reactor according to claim 1, it is characterized in that: described shower head is disc shape, and its shower head chamber is divided into upper and lower two layers, and described upper layer The spray chamber is separated by partitions to form more than three independent areas, each independent area has an independent air inlet on the top surface; the lower spray chamber is a solid structure, and the upper spray chamber and the reaction chamber are connected through it It has dense nozzles.3.根据权利要求2所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述喷淋头上层喷淋腔由隔板相隔形成四个扇形的独立区域。3. A vertical spray MOCVD reactor according to claim 2, characterized in that: the upper spray cavity of the spray head is separated by partitions to form four fan-shaped independent areas.4.根据权利要求3所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述上层喷淋腔根据不同反应气体与载气的体积配比形成两个容积相对另两个容积较大的四个扇形的独立区域，所述四个独立区域的容积两两相等，间隔排布。4. A kind of vertical spraying type MOCVD reactor according to claim 3, it is characterized in that: described upper floor spraying cavity forms two volumes relatively other two volumes according to the volume ratio of different reaction gases and carrier gas Four large fan-shaped independent areas, the volumes of the four independent areas are equal in pairs and arranged at intervals.5.根据权利要求1所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述喷淋头对应下方衬底托各环之间的位置设有用于隔断气体的柱面体形的环形栅板。5. A kind of vertical shower type MOCVD reactor according to claim 1, it is characterized in that: described shower head is provided with the annular ring that is used to cut off the cylindrical shape of gas between each ring of substrate holder correspondingly grille.6.根据权利要求5所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述环形栅板的数量对应于衬底托的排布环数少一块。6 . A vertical shower-type MOCVD reactor according to claim 5 , wherein the number of said ring-shaped grid plates is one less than the number of arranged rings of the substrate support. 7 .7.根据权利要求1所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述转轴外围设有四层对应不同反应气体的套管，且所述喷淋头腔体相隔形成四个独立区域，并在套管底部与喷淋头腔体的交界面上开设有对应于各套管相互独立的四个扇环形进气口。7. A vertical spray MOCVD reactor according to claim 1, characterized in that: four layers of bushings corresponding to different reaction gases are arranged on the periphery of the rotating shaft, and the shower head cavity is separated to form four layers. Four independent fan-shaped air inlets corresponding to each casing are opened on the interface between the bottom of the casing and the shower head cavity.8.根据权利要求1所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述加热器一一对应设于各衬底托内，且并行连接到总控制器。8. A vertical shower-type MOCVD reactor according to claim 1, characterized in that: the heaters are arranged in each substrate holder in one-to-one correspondence, and are connected to the general controller in parallel.9.根据权利要求1或8所述的一种垂直喷淋式MOCVD反应器，其特征在于：所述衬底托包括空心套筒、设于空心套筒顶面的石墨托盘及设于空心套筒内的加热器，其中所述石墨托盘表面设有用于放置基片的凹槽。9. A kind of vertical shower type MOCVD reactor according to claim 1 or 8, it is characterized in that: described substrate holder comprises hollow sleeve, is located at the graphite tray of hollow sleeve top surface and is located at hollow sleeve A heater inside the barrel, wherein the surface of the graphite tray is provided with grooves for placing substrates.

Images