CN101494311B - Miniaturisation power distribution/synthesis network based on substrate integrated waveguide - Google Patents

Abstract

The invention discloses a small-size power splitting/synthesis network on the basis of SIRW (substrate integration wave guide). The splitting/synthesis network couples energy from a lower dielectric slab to an upper metal plate through a coupling part of a public metallic surface of an intermediate layer between an upper SIRW and a lower SIRW; the coupling part adopts a form of stripline step matching; and a coupling port and an isolate port are arranged at the two sides respectively, which is convenient for testing and practical application in engineering. The small-size power splitting/synthesis network has the obvious advantages of good distribution properly, high isolation, little volume, light weight and easy for the integration with other plane microwave and millimeter wave circuits.

Description

Translated fromChinese

基于衬底集成波导的小型化功率分配/合成网络Substrate-integrated waveguide-based miniaturized power distribution/combining network

技术领域technical field

本发明属于一种微波毫米波混合集成电路和毫米波集成电路中的功率分配/合成系统，特别是具有功率容量大的衬底集成波导功率分配/合成网络。 The invention belongs to a microwave and millimeter wave hybrid integrated circuit and a power distribution/combination system in the millimeter wave integrated circuit, in particular a substrate integrated waveguide power distribution/combination network with large power capacity. the

背景技术Background technique

微波功率分配/合成网络是微波毫米波系统中的一个重要器件，起着功率分配和功率合成的作用。常用的功率分配/合成网络均设计在矩形波导或者微带线上。而我们所熟知的矩形波导具有损耗小，承受功率容量大，Q值高等优点，但体积大，难以与平面电路集成，而现代技术的发展则对小型化，集成化具有相当高的要求；微带线则具有体积小，重量轻，易于集成等优点，但是其功率容量小，Q值低，因而在某些方面的应用受到一定的局限。近年来，有学者提出一种新型的设计平台-衬底集成波导，即通过加工在微带衬底上的两排金属柱，把矩形波导制作到微带衬底上。这种新型传输线融合了矩形波导和微带线的优点，不仅体积小，重量轻，可承受较高的功率门限，而且Q值也较高。目前，已经有一些微波毫米波的无源或者有源器件被设计在这种新型传输线上，理论和实验均表明这些器件具有非常突出的特点，兼具矩形波导器件和微带器件的双重优点，因而在微波毫米波混合集成电路以及毫米波集成电路(MMIC)中得到了很大的应用，如“Simulation and experiment on SIW slot array antennas，”IEEEMicrowave and Wireless Comp.Lett.，Vol.14，No.9，2004，pp446-448以及“Designconsideration and performance analysis of substrate integrated waveguide components，”32nd European Microwave conference proceedings，2002，pp88-884。 The microwave power distribution/combination network is an important device in the microwave and millimeter wave system, which plays the role of power distribution and power synthesis. Commonly used power distribution/combination networks are designed on rectangular waveguides or microstrip lines. The well-known rectangular waveguide has the advantages of small loss, large power capacity, and high Q value, but it is bulky and difficult to integrate with planar circuits. The development of modern technology has very high requirements for miniaturization and integration; The strip line has the advantages of small size, light weight, and easy integration, but its power capacity is small and its Q value is low, so its application in some aspects is limited. In recent years, some scholars have proposed a new design platform-substrate-integrated waveguide, that is, the rectangular waveguide is fabricated on the microstrip substrate by processing two rows of metal pillars on the microstrip substrate. This new type of transmission line combines the advantages of rectangular waveguide and microstrip line. It is not only small in size, light in weight, can withstand high power threshold, but also has a high Q value. At present, some microwave and millimeter wave passive or active devices have been designed on this new type of transmission line. Both theory and experiments have shown that these devices have very outstanding characteristics, and have the dual advantages of rectangular waveguide devices and microstrip devices. Therefore, it has been widely used in microwave and millimeter wave hybrid integrated circuits and millimeter wave integrated circuits (MMIC), such as "Simulation and experiment on SIW slot array antennas," IEEE Microwave and Wireless Comp. Lett., Vol.14, No. 9, 2004, pp446-448 and "Designconsideration and performance analysis of substrate integrated waveguide components," 32nd European Microwave conference proceedings, 2002, pp88-884. the

发明内容Contents of the invention

本发明的目的在于提供一种不仅功率分配特性好、隔离度高，而且体积小、重量轻、易于和其他的平面微波毫米波电路集成的衬底集成波导功率分配/合成网络。 The object of the present invention is to provide a substrate-integrated waveguide power distribution/synthesis network with good power distribution characteristics and high isolation, small size, light weight, and easy integration with other planar microwave and millimeter wave circuits. the

实现本发明目的的技术方案为：一种基于衬底集成波导的小型化功率分配/合成网络，两块叠加的衬底集成波导之间为中间层公共金属面，在下层衬底集成波导上设置两排平行金属化过孔，在下层介质基板上并位于该两排平行金属化过孔两端的中间位 置处分别设置输入端口和直通输出端口，在靠近输入端口处设置第一带状线短阶梯阻抗匹配，在直通输出端口设置第二带状线长阶梯阻抗匹配；上层衬底集成波导上设置四排弯曲金属化过孔，在上层介质基板上的一侧分别设置两个耦合输出端口，另一侧分别设置两个隔离端口，在靠近输入端口的两排弯曲金属化过孔两端的中间位置处分别设置第一隔离端口和第一耦合输出端口，在靠近直通输出端口的另外两排弯曲金属化过孔两端的中间位置处分别设置第二隔离端口和第二耦合输出端口；所述的第一、二带状线阶梯阻抗匹配位于两排平行金属化过孔和四排弯曲金属化过孔之间；在输入端口、直通输出端口、耦合输出端口和隔离端口分别设置50欧姆微带线和中间锥形变换。 The technical solution for realizing the object of the present invention is: a miniaturized power distribution/synthesis network based on substrate integrated waveguides, the common metal surface of the middle layer is between two superimposed substrate integrated waveguides, and the lower substrate integrated waveguide is provided with Two rows of parallel metallized via holes, on the lower dielectric substrate and at the middle positions of the two ends of the two rows of parallel metallized via holes, are respectively provided with an input port and a straight-through output port, and a first stripline short is provided near the input port. Ladder impedance matching, the second stripline long-ladder impedance matching is set at the straight-through output port; four rows of curved metallized via holes are set on the integrated waveguide of the upper substrate, and two coupling output ports are respectively set on one side of the upper dielectric substrate, Two isolated ports are set on the other side, the first isolated port and the first coupling output port are respectively set in the middle of the two rows of curved metallized via holes close to the input port, and the other two rows of curved metallized via holes close to the straight-through output port The second isolation port and the second coupling output port are respectively set at the middle positions of both ends of the metallized via hole; the first and second stripline ladder impedance matching are located in the two rows of parallel metallized via holes and the four rows of curved metallized via holes. Between the holes; 50 ohm microstrip lines and intermediate tapered transformations are respectively set at the input port, the straight-through output port, the coupled output port and the isolation port. the

与现有技术相比，本发明具有如下显著优点：(1)宽壁定向耦合器形式的串型功率分配/合成网络设计到微带衬底上，从而融合了传统的矩形波导和微带线的双重优点，体积和重量均大大减小，并具有较高的Q值；(2)其平面结构易于和其他平面电路或系统连接，微带线的变换和衬底集成波导的功率分配/合成网络共用同一介质衬底，具有较高程度的集成性，加工简单，成本低；(3)宽壁耦合采用新颖带状线阶梯耦合结构，该结构具有匹配效果好、结构简介、易加工的优点；(4)耦合端口和隔离端口设计在不同侧，可以避免更多能量通过微带过渡相互影响，并且便于实验测试以及同其它元件的连接；(5)采用上述结构方案，实验测试结果可达到，在11％的带宽内，回波损耗低于20dB，端口的插入损耗低于0.8dB，输出幅度不平衡度小于0.7dB，隔离达20dB。 Compared with the prior art, the present invention has the following significant advantages: (1) the serial power distribution/combination network design of the wide-wall directional coupler form is on the microstrip substrate, thereby merging the traditional rectangular waveguide and the microstrip line (2) Its planar structure is easy to connect with other planar circuits or systems, the conversion of microstrip lines and the power distribution/synthesis of substrate-integrated waveguides The network shares the same dielectric substrate, which has a high degree of integration, simple processing, and low cost; (3) The wide-wall coupling adopts a novel stripline ladder coupling structure, which has the advantages of good matching effect, simple structure, and easy processing ; (4) The coupling port and the isolation port are designed on different sides, which can avoid the mutual influence of more energy through the microstrip transition, and facilitate the experimental test and the connection with other components; (5) adopt the above-mentioned structural scheme, the experimental test result can reach , In 11% of the bandwidth, the return loss is lower than 20dB, the insertion loss of the port is lower than 0.8dB, the output amplitude imbalance is lower than 0.7dB, and the isolation reaches 20dB. the

下面结合附图对本发明作进一步详细说明。 The present invention will be described in further detail below in conjunction with the accompanying drawings. the

附图说明Description of drawings

图1是本发明基于衬底集成波导的小型化功率分配/合成网络的示意图。 FIG. 1 is a schematic diagram of a miniaturized power distribution/combination network based on substrate-integrated waveguides of the present invention. the

图2是本发明基于衬底集成波导的小型化功率分配/合成网络从衬底集成波导功率分配/合成网络到微带线的过渡变换结构的示意图。 Fig. 2 is a schematic diagram of the transition conversion structure from the substrate-integrated waveguide power distribution/combination network to the microstrip line based on the miniaturized power distribution/synthesis network of the substrate-integrated waveguide of the present invention. the

具体实施方式Detailed ways

结合图1，本发明基于衬底集成波导的小型化功率分配/合成网络，两块叠加的衬底集成波导之间为中间层公共金属面14，在下层衬底集成波导13上设置两排平行金属化过孔15、16，在下层介质基板10上并位于该两排平行金属化过孔15、16两端的中间位置处分别设置输入端口2和直通输出端口5，在靠近输入端口2处设置第一带状线短阶梯阻抗匹配8，在直通输出端口5设置第二带状线长阶梯阻抗匹配9；上层衬底集成波导1上设置四排弯曲金属化过孔17、18、19、20，在上层介质基板上的一侧分别设置两个耦合输出端口3、4，另一侧分别设置两个隔离端口6、7，在靠近输入端口2的两排弯曲金属化过孔17、18两端的中间位置处分别设置第一隔离端口6和第一耦合输出端口3，在靠近直通输出端口5的另外两排弯曲金属化过孔19、20两端的中间位置处分别设置第二隔离端口7和第二耦合输出端口4；所述的第一、二带状线阶梯阻抗匹配8、9位于两排平行金属化过孔15、16和四排弯曲金属化过孔17、18、19、20之间；在输入端口2、直通输出端口5、耦合输出端口3、4和隔离端口6、7分别设置50欧姆微带线11和中间锥形变换12，如图2。1, the present invention is based on a miniaturized power distribution/combination network of substrate integrated waveguides. Between two superimposed substrate integrated waveguides is a common metal surface 14 in the middle layer, and two parallel rows are set on the lower substrate integrated waveguide 13. Metallized via holes 15 and 16 are provided on the lower dielectric substrate 10 and at the middle positions between the two ends of the two rows of parallel metallized via holes 15 and 16, respectively. The first stripline short-step impedance matching 8, the second stripline long-step impedance matching 9 is set at the straight-through output port 5; four rows of curved metallized via holes 17, 18, 19, 20 are set on the upper substrate integrated waveguide 1 Two coupling output ports 3, 4 are set on one side of the upper dielectric substrate, two isolation ports 6, 7 are set on the other side, two rows of curved metallized via holes 17, 18 near the input port 2 The first isolation port 6 and the first coupling output port 3 are respectively set at the middle position of the end, and the second isolation port 7 and The second coupling output port 4; the first and second stripline ladder impedance matching 8, 9 are located between two rows of parallel metallized via holes 15, 16 and four rows of curved metallized via holes 17, 18, 19, 20 between the input port 2, the through output port 5, the coupled output port 3, 4, and the isolated port 6, 7, and respectively set a 50-ohm microstrip line 11 and an intermediate tapered transformation 12, as shown in FIG. 2 .

当工作频率为C、X波段，介质基片10的厚度小于1mm，介电常数范围为2～10。上述平行金属化过孔15、16和弯曲金属化过孔17、18、19、20的半径相等，范围为0.2mm～0.6mm，相邻两金属化过孔之间的间距小于等于半径的4倍，两排金属化过孔之间的间距为10mm～25mm。锥形变换12的宽边范围为2mm～5mm，窄边为1mm～2.7mm，微带线11的宽度与锥形变换12窄边相等，微带线11长度范围为4mm～10mm。用带状线阶梯阻抗匹配实现宽壁耦合，第一带状线短阶梯阻抗匹配8中间段匹配长度范围为7mm～13.5mm，宽度范围4mm～7mm，侧段匹配长度范围0.7～1.4mm，宽度范围8mm～13.7mm；第二带状线长阶梯阻抗匹配9中间段匹配长度范围9mm～16.4mm，宽度范围4mm～6.3mm，侧段匹配长度范围1.7mm～3.1mm，宽度7mm～12.3mm。 When the working frequency is in the C and X bands, the thickness of the dielectric substrate 10 is less than 1 mm, and the dielectric constant ranges from 2 to 10. The radii of the parallel metallized vias 15, 16 and the curved metallized vias 17, 18, 19, 20 are equal, ranging from 0.2 mm to 0.6 mm, and the distance between two adjacent metallized vias is less than or equal to 4 times the radius. times, the distance between two rows of metallized vias is 10mm to 25mm. The wide side of the tapered transform 12 ranges from 2 mm to 5 mm, and the narrow side ranges from 1 mm to 2.7 mm. The width of the microstrip line 11 is equal to the narrow side of the tapered transform 12, and the length of the microstrip line 11 ranges from 4 mm to 10 mm. Use stripline ladder impedance matching to realize wide-wall coupling. The first stripline short ladder impedance matching 8 middle segment matching length ranges from 7mm to 13.5mm, width ranges from 4mm to 7mm, side segment matching length ranges from 0.7 to 1.4mm, and width The range is 8mm to 13.7mm; the second stripline long ladder impedance matching 9 middle section matching length ranges from 9mm to 16.4mm, width ranges from 4mm to 6.3mm, side section matching length ranges from 1.7mm to 3.1mm, and width ranges from 7mm to 12.3mm. the

实施例。结合图1，本发明基于衬底集成波导的小型化功率分配/合成网络，衬底集成波导由制作在介质基板10上的两排金属柱构成。金属化过孔的半径为0.3mm，相邻两金属化过孔之间的间距为1.2mm，两排金属化过孔之间的间距为16mm。介质基板的厚度为0.8mm，介电常数为2.65，工作频段为7.7GHz～8.6GHz。下层衬底集成波导13上设置的两排平行金属化过孔15、16间距，上层衬底集成波导1上设置的两排弯曲金属化过孔17、18，以及两排弯曲金属化过孔19、20间距均为16mm。输入端口 2和直通输出端口5之间的距离为140.6mm，两个耦合输出端口3、4之间的距离为54mm，两个隔离端口6、7之间的距离为49.2mm。基于衬底集成波导的小型化功率分配/合成网络是用带状线阶梯阻抗匹配的形式实现耦合的，第一带状线短阶梯阻抗匹配8中间段匹配长度11.6mm，宽度6.2mm，侧段匹配长度1mm，宽度11.8mm；第二带状线短长阶梯阻抗匹配9中间段匹配长度13.2mm，宽度5.4mm，侧段匹配长度2.1mm，宽度10.2mm。 Example. Referring to FIG. 1 , the present invention is based on a miniaturized power distribution/combination network of substrate-integrated waveguides, which are composed of two rows of metal pillars fabricated on a dielectric substrate 10 . The radius of the metallized via hole is 0.3mm, the distance between two adjacent metallized via holes is 1.2mm, and the distance between two rows of metallized via holes is 16mm. The thickness of the dielectric substrate is 0.8mm, the dielectric constant is 2.65, and the working frequency range is 7.7GHz-8.6GHz. The distance between the two rows of parallel metallized via holes 15 and 16 set on the lower substrate integrated waveguide 13, the two rows of curved metallized via holes 17, 18 and the two rows of curved metallized via holes 19 set on the upper substrate integrated waveguide 1 , 20 pitches are 16mm. The distance between the input port 2 and the through output port 5 is 140.6mm, the distance between the two coupled output ports 3 and 4 is 54mm, and the distance between the two isolated ports 6 and 7 is 49.2mm. The miniaturized power distribution/combination network based on the substrate integrated waveguide is coupled in the form of stripline step impedance matching. The first stripline short step impedance matching 8 middle segment matching length is 11.6mm, width is 6.2mm, and the side segment The matching length is 1mm, and the width is 11.8mm; the matching length of the middle section of the second stripline short-length ladder impedance matching 9 is 13.2mm, and the width is 5.4mm, and the matching length of the side section is 2.1mm, and the width is 10.2mm. the

为了便于和其他平面电路和系统连接，本发明特别设计了到50欧姆微带线的变换，而且该变换和衬底集成波导功率分配/合成网络共用同一介质衬底基板10，厚度为0.8mm，介电常数为2.56mm。其中50欧姆微带线11的宽度为2.2mm。中间锥形变换12的宽边为4.3mm，窄边为2.2mm，长度为6.3mm。 In order to facilitate connection with other planar circuits and systems, the present invention specially designs the conversion to 50 ohm microstrip line, and the conversion and the substrate integrated waveguide power distribution/synthesis network share the same dielectric substrate substrate 10, with a thickness of 0.8mm. The dielectric constant is 2.56mm. The width of the 50-ohm microstrip line 11 is 2.2mm. The wide side of the intermediate tapered transformation 12 is 4.3 mm, the narrow side is 2.2 mm, and the length is 6.3 mm. the

用矢量网络分析仪HP8510C测试的结果表明：本发明提出的基于衬底集成波导的小型化功率分配/合成网络在11％的带宽内，回波损耗低于20dB，端口的插入损耗低于0.8dB，输出幅度不平衡度小于0.7dB，输出端口隔离达20dB，总体积(含微带转换)为140.6mm*49.8mm*1.6mm。 The result of the test with the vector network analyzer HP8510C shows that: the miniaturized power distribution/combination network based on the substrate integrated waveguide proposed by the present invention has a return loss lower than 20dB within a bandwidth of 11%, and the insertion loss of the port is lower than 0.8dB , the output amplitude unbalance is less than 0.7dB, the output port isolation is up to 20dB, and the total volume (including microstrip conversion) is 140.6mm*49.8mm*1.6mm. the

Claims (5)

Translated fromChinese

1.一种基于衬底集成波导的小型化功率分配/合成网络，其特征在于两块叠加的衬底集成波导之间为中间层公共金属面[14]，在下层衬底集成波导[13]上设置两排平行金属化过孔[15、16]，在下层介质基板[10]上并位于该两排平行金属化过孔[15、16]两端的中间位置处分别设置输入端口[2]和直通输出端口[5]，在靠近输入端口[2]处设置第一带状线短阶梯阻抗匹配[8]，在直通输出端口[5]设置第二带状线长阶梯阻抗匹配[9]；上层衬底集成波导[1]上设置四排弯曲金属化过孔[17、18、19、20]，在上层介质基板上的一侧分别设置第一耦合输出端口[3]、第二耦合输出端口[4]，另一侧分别设置第一隔离端口[6]、第二隔离端口[7]，在靠近输入端口[2]的两排弯曲金属化过孔[17、18]两端的中间位置处分别设置第一隔离端口[6]和第一耦合输出端口[3]，在靠近直通输出端口[5]的另外两排弯曲金属化过孔[19、20]两端的中间位置处分别设置第二隔离端口[7]和第二耦合输出端口[4]；所述的第一带状线短阶梯阻抗匹配[8]位于两排平行金属化孔[15、16]之间和两排弯曲金属化孔[17、18]之间，所述的第二带状线长阶梯阻抗匹配[9]位于两排金属化过孔[15、16]之间和另外两排弯曲金属化过孔[19、20]之间；在输入端口[2]、直通输出端口[5]、第一耦合输出端口[3]、第二耦合输出端口[4]和第一隔离端口[6]、第二隔离端口[7]分别设置50欧姆微带线[11]和中间锥形变换[12]。1. A miniaturized power distribution/combination network based on substrate-integrated waveguides, which is characterized in that the middle-layer common metal surface is between two superimposed substrate-integrated waveguides [14], and the underlying substrate-integrated waveguides [13] Set two rows of parallel metallized via holes [15, 16] on the upper layer, and set input ports [2] on the lower dielectric substrate [10] and at the middle positions of the two ends of the two rows of parallel metallized via holes [15, 16]. and the straight-through output port [5], set the first stripline short-step impedance matching [8] near the input port [2], and set the second stripline long-step impedance matching [9] at the straight-through output port [5] ; Four rows of curved metallized via holes [17, 18, 19, 20] are set on the upper substrate integrated waveguide [1], and the first coupling output port [3] and the second coupling output port [3] are respectively set on one side of the upper dielectric substrate. On the output port [4], the first isolation port [6] and the second isolation port [7] are respectively set on the other side, in the middle of the two ends of the two rows of curved metallized via holes [17, 18] near the input port [2] The first isolation port [6] and the first coupling output port [3] are respectively set at the positions, and the middle positions of the other two rows of curved metallized via holes [19, 20] near the straight-through output port [5] are respectively set The second isolation port [7] and the second coupled output port [4]; the first stripline short ladder impedance matching [8] is located between two rows of parallel metallized holes [15, 16] and two rows of curved Between the metallized holes [17, 18], the second stripline long ladder impedance matching [9] is located between the two rows of metallized vias [15, 16] and the other two rows of curved metallized vias [ 19, 20]; between the input port [2], the through output port [5], the first coupled output port [3], the second coupled output port [4] and the first isolated port [6], the second isolated The port [7] is respectively set with a 50-ohm microstrip line [11] and an intermediate tapered transformation [12].2.根据权利要求1所述的基于衬底集成波导的小型化功率分配/合成网络，其特征在于：工作频率为C、X波段，下层介质基板[10]的厚度小于1mm，介电常数范围为2～10。2. The miniaturized power distribution/combination network based on substrate-integrated waveguides according to claim 1, characterized in that: the operating frequency is in the C and X bands, the thickness of the lower dielectric substrate [10] is less than 1mm, and the dielectric constant range 2 to 10.3.根据权利要求1所述的基于衬底集成波导的小型化功率分配/合成网络，其特征在于：平行金属化过孔[15、16]和弯曲金属化过孔[17、18、19、20]的半径相等，范围为0.2mm～0.6mm，相邻两金属化过孔之间的间距小于等于半径的4倍，两排平行金属化过孔[15、16]之间的间距为10mm～25mm。3. The miniaturized power distribution/combination network based on substrate integrated waveguide according to claim 1, characterized in that: parallel metallized vias [15, 16] and curved metallized vias [17, 18, 19, 20] have the same radius, ranging from 0.2mm to 0.6mm, the distance between two adjacent metallized via holes is less than or equal to 4 times the radius, and the distance between two rows of parallel metallized via holes [15, 16] is 10mm ~25mm.4.根据权利要求1所述的基于衬底集成波导的小型化功率分配/合成网络，其特征在于：锥形变换[12]的宽边范围为2mm～5mm，窄边为1mm～2.7mm，微带线[11]的宽度与锥形变换[12]窄边相等，微带线[11]长度范围为4mm～10mm。4. The miniaturized power distribution/combination network based on substrate-integrated waveguides according to claim 1, characterized in that: the broadside range of the tapered transformation [12] is 2 mm to 5 mm, and the narrow side is 1 mm to 2.7 mm, The width of the microstrip line [11] is equal to the narrow side of the tapered transformation [12], and the length of the microstrip line [11] ranges from 4 mm to 10 mm.5.根据权利要求1所述的基于衬底集成波导的小型化功率分配/合成网络，其特征在于：用带状线阶梯阻抗匹配实现宽壁耦合，第一带状线短阶梯阻抗匹配[8]中间段匹配长度范围为7mm～13.5mm，宽度范围4mm～7mm，侧段匹配长度范围0.7～1.4mm，宽度范围8mm～13.7mm；第二带状线长阶梯阻抗匹配[9]中间段匹配长度范围9mm～16.4mm，宽度范围4mm～6.3mm，侧段匹配长度范围1.7mm～3.1mm，宽度7mm～12.3mm。5. The miniaturized power distribution/combination network based on substrate-integrated waveguides according to claim 1, characterized in that: use stripline step impedance matching to realize wide-wall coupling, the first stripline short step impedance matching [8 ] The matching length range of the middle section is 7mm~13.5mm, the width range is 4mm~7mm, the matching length range of the side section is 0.7~1.4mm, and the width range is 8mm~13.7mm; the second stripline long ladder impedance matching [9] Middle section matching The length ranges from 9mm to 16.4mm, the width ranges from 4mm to 6.3mm, the matching side section length ranges from 1.7mm to 3.1mm, and the width ranges from 7mm to 12.3mm.