CN101342679A

Movatterモバイル変換

Info

Publication number: CN101342679A
Application number: CNA2008101187043A
Authority: CN
Inventors: 路新春; 王同庆; 朱煜; 雒建斌
Original assignee: Tsinghua University
Current assignee: Tsinghua University
Priority date: 2008-08-19
Filing date: 2008-08-19
Publication date: 2009-01-14

Abstract

本发明公开了一种用于化学机械抛光的抛光头，包括：基座，所述基座下方边缘区域有环状凹槽；保持环隔膜，固定在所述基座的下方，与所述环状凹槽形成保持环腔室；保持环，通过所述保持环隔膜浮动于所述保持环腔室的下方，所述保持环在所述基座的正下方设置有口袋区域，用来容纳晶圆；多腔室隔膜，所述多腔室隔膜有盘状平面，其上集成有多个同心环状肋，所述盘状平面、同心环状肋与所述基座的下表面形成多个相互独立的同心环状腔室。本发明在抛光过程中，可通过同心环状腔室对晶圆背侧的不同区域施加不同的低下压力，从而获得较好的均匀性。

The invention discloses a polishing head for chemical mechanical polishing, comprising: a base, an annular groove in the lower edge region of the base; a retaining ring diaphragm, fixed under the base, and the ring A retaining ring chamber is formed by a groove shaped like a retaining ring; the retaining ring is floated below the retaining ring chamber through the retaining ring diaphragm, and the retaining ring is provided with a pocket area directly below the base to accommodate crystal Circle; multi-chamber diaphragm, the multi-chamber diaphragm has a disc-shaped plane on which a plurality of concentric annular ribs are integrated, and the disc-shaped plane, concentric annular ribs and the lower surface of the base form a plurality of Independent concentric annular chambers. In the polishing process of the present invention, different low down pressures can be applied to different regions of the backside of the wafer through the concentric annular chamber, thereby obtaining better uniformity.

Description

Translated fromChinese

一种用于化学机械抛光的抛光头A polishing head for chemical mechanical polishing

技术领域technical field

本发明涉及集成电路制造技术领域，特别是涉及一种用于化学机械抛光的抛光头。The invention relates to the technical field of integrated circuit manufacturing, in particular to a polishing head for chemical mechanical polishing.

背景技术Background technique

在集成电路的制造过程中，由于特征尺寸的不断缩小和金属互连层数的不断增加，图形曝光的焦深变得越来越小。要实现多层布线，晶圆表面必须具有很高的均匀性，而CMP(Chemical-MechanicalPolish，化学机械抛光)技术是目前最有效的全局平坦化技术。In the manufacturing process of integrated circuits, due to the continuous reduction of feature size and the continuous increase of the number of metal interconnection layers, the depth of focus of pattern exposure becomes smaller and smaller. To realize multi-layer wiring, the surface of the wafer must have high uniformity, and CMP (Chemical-Mechanical Polish, chemical mechanical polishing) technology is currently the most effective global planarization technology.

CMP技术是将待抛光的晶圆由抛光头夹持，并将其以一定压力压在抛光垫上，在抛光过程中，抛光头带动晶圆沿转轴旋转，抛光垫则沿另一转轴旋转，由磨粒和化学溶液组成的抛光液在晶圆和抛光垫之间流动，通过化学和机械的共同作用实现表面平坦化。在抛光过程中，抛光头起着夹持晶圆并对其背侧施加下压力(downforce)的作用，是实现表面平坦化的关键所在。CMP technology is to hold the wafer to be polished by the polishing head and press it on the polishing pad with a certain pressure. During the polishing process, the polishing head drives the wafer to rotate along the rotation axis, and the polishing pad rotates along the other rotation axis. The polishing liquid composed of abrasive grains and chemical solution flows between the wafer and the polishing pad, and the surface is planarized through the joint action of chemical and mechanical. During the polishing process, the polishing head plays the role of clamping the wafer and exerting a downforce on its backside, which is the key to achieving surface planarization.

在现有的CMP技术中，已知有多种原因可以引起晶圆表面的非均匀性。这些原因包括：施加到晶圆背侧的下压力不均匀、因抛光垫在晶圆边缘区域和在中心区域出现的典型作用差异而引起的边缘效应、金属/氧化层的非均匀沉积等。迄今为止，为同时解决这些问题所做的努力尚没有取得成功。In the existing CMP technology, it is known that there are various reasons that can cause the non-uniformity of the wafer surface. These reasons include: non-uniform down force applied to the backside of the wafer, edge effects due to the typical difference in the action of the polishing pad at the edge and center of the wafer, non-uniform deposition of the metal/oxide layer, etc. Efforts to address these issues simultaneously have so far been unsuccessful.

与此同时，随着特征尺寸的不断缩小，为了降低RC(阻容)延迟，铜互连和低k材料的引入已成为必然。而低k材料的多孔结构使得其机械性能变得很差，CMP过程中的常规下压力(2.0-6.0psi)已无法满足要求，必须采用低下压力(＜2.0psi)，这就需要对抛光头进行相应的改进。At the same time, with the continuous shrinking of the feature size, in order to reduce the RC (resistance capacitance) delay, the introduction of copper interconnection and low-k materials has become inevitable. However, the porous structure of low-k materials makes its mechanical properties very poor. The conventional downforce (2.0-6.0psi) in the CMP process can no longer meet the requirements, and low downforce (<2.0psi) must be used, which requires the polishing head Make corresponding improvements.

发明内容Contents of the invention

本发明实施例要解决的问题是提供一种用于化学机械抛光的抛光头，以实现在抛光过程中获得较好的均匀性。The problem to be solved by the embodiments of the present invention is to provide a polishing head for chemical mechanical polishing, so as to achieve better uniformity in the polishing process.

为达到上述目的，本发明实施例的技术方案提供一种用于化学机械抛光的抛光头，所述抛光头包括：In order to achieve the above object, the technical solution of the embodiment of the present invention provides a polishing head for chemical mechanical polishing, the polishing head includes:

基座，所述基座下方边缘区域有环状凹槽；a base with an annular groove in the lower edge area of the base;

保持环隔膜，固定在所述基座的下方，与所述环状凹槽形成保持环腔室；The retaining ring diaphragm is fixed under the base and forms a retaining ring chamber with the annular groove;

保持环，通过所述保持环隔膜浮动于所述保持环腔室的下方，所述保持环在所述基座的正下方设置有口袋区域，用来容纳晶圆；a retaining ring floating below the retaining ring chamber through the retaining ring diaphragm, and the retaining ring is provided with a pocket area directly below the base for accommodating wafers;

多腔室隔膜，所述多腔室隔膜有盘状平面，其上集成有多个同心环状肋，所述盘状平面、同心环状肋与所述基座的下表面形成多个相互独立的同心环状腔室。A multi-chamber diaphragm, the multi-chamber diaphragm has a disc-shaped plane on which a plurality of concentric annular ribs are integrated, and the disc-shaped plane, concentric annular ribs and the lower surface of the base form a plurality of mutually independent concentric annular chambers.

其中，所述保持环腔室容纳有气体或液体，所述气体或液体的压力通过所述保持环隔膜传递至所述保持环，形成下压力。Wherein, the retaining ring chamber contains gas or liquid, and the pressure of the gas or liquid is transmitted to the retaining ring through the retaining ring diaphragm to form a downward force.

其中，所述多个相互独立的同心环状腔室容纳有气体或液体，所述气体或液体的压力通过所述多腔室隔膜传递至晶圆，形成下压力。Wherein, the multiple independent concentric annular chambers contain gas or liquid, and the pressure of the gas or liquid is transmitted to the wafer through the multi-chamber diaphragm to form a downward force.

其中，所述保持环腔室内的气体或液体的压力是可以调节的。Wherein, the pressure of the gas or liquid in the retaining ring chamber can be adjusted.

其中，所述多个相互独立的同心环状腔室内的气体或液体的压力可以分别调节。Wherein, the pressure of the gas or liquid in the plurality of mutually independent concentric annular chambers can be adjusted separately.

其中，所述同心环状肋的末端有垂直于所述同心环状肋的环状平板，用于与所述基座固定。Wherein, the end of the concentric annular rib has an annular flat plate perpendicular to the concentric annular rib for fixing with the base.

其中，所述多个相互独立的同心环状腔室为3-5个。Wherein, the plurality of mutually independent concentric annular chambers is 3-5.

其中，所述保持环隔膜和多腔室隔膜的材料为弹性材料，所述弹性材料包括氟橡胶、硅橡胶或聚氨酯橡胶。Wherein, the materials of the retaining ring diaphragm and the multi-chamber diaphragm are elastic materials, and the elastic materials include fluorine rubber, silicon rubber or polyurethane rubber.

其中，所述保持环隔膜与所述基座的固定方式和所述多腔室隔膜与所述基座的固定方式，为采用粘贴和/或机械连接的方式。Wherein, the fixing method of the retaining ring diaphragm and the base and the fixing method of the multi-chamber diaphragm and the base are pasting and/or mechanical connection.

其中，所述保持环的下部有多个沿径向打通、均匀分布的凹槽，所述凹槽用于在抛光过程中液体及磨削的排入/排出通道。Wherein, the lower part of the retaining ring has a plurality of radially opened and uniformly distributed grooves, and the grooves are used for liquid and grinding discharge in/out channels during the polishing process.

与现有技术相比，本发明的技术方案具有如下优点：Compared with the prior art, the technical solution of the present invention has the following advantages:

本发明实施例在抛光过程中，该抛光头可以根据多腔室隔膜调节作用在晶圆上不同区域的下压力，可以根据保持环隔膜调节作用在保持环上的下压力，同时多腔室隔膜和保持环隔膜的设计可实现低下压力抛光，因此能够改善晶圆表面的平坦化效果。In the embodiment of the present invention, during the polishing process, the polishing head can adjust the downforce acting on different regions on the wafer according to the multi-chamber diaphragm, and can adjust the downforce acting on the retaining ring according to the retaining ring diaphragm, while the multi-chamber diaphragm The design of the diaphragm and retaining ring enables low downforce polishing, thereby improving planarization of the wafer surface.

附图说明Description of drawings

图1是本发明实施例的一种抛光头的剖面结构示意图；Fig. 1 is the cross-sectional structure schematic diagram of a kind of polishing head of the embodiment of the present invention;

图2是本发明实施例的一种抛光头的另一剖面结构示意图；Fig. 2 is another sectional structural schematic diagram of a kind of polishing head of the embodiment of the present invention;

图3是本发明实施例的一种保持环的剖面结构示意图；Fig. 3 is a schematic cross-sectional structure diagram of a retaining ring according to an embodiment of the present invention;

图4是本发明实施例的一种保持环的仰视示意图；Fig. 4 is a schematic bottom view of a retaining ring according to an embodiment of the present invention;

图5是本发明实施例的一种多腔室隔膜的剖面结构示意图；5 is a schematic cross-sectional structure diagram of a multi-chamber diaphragm according to an embodiment of the present invention;

图6是本发明实施例的一种多腔室隔膜的俯视示意图。Fig. 6 is a schematic top view of a multi-chamber membrane according to an embodiment of the present invention.

具体实施方式Detailed ways

下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

图1和图2是根据本发明优选实施例的抛光头100的剖面结构示意图。抛光头100包括一上壳体10、一基座20、一保持环隔膜30、一保持环40以及一多腔室隔膜50。1 and 2 are schematic cross-sectional structural views of apolishing head 100 according to a preferred embodiment of the present invention. Thepolishing head 100 includes anupper shell 10 , abase 20 , aretaining ring diaphragm 30 , aretaining ring 40 and amulti-chamber diaphragm 50 .

上壳体10可与一驱动轴相连接，并在抛光过程中以驱动轴带动晶圆200沿轴线90朝一固定方向旋转。驱动轴在抛光过程中与抛光垫300呈垂直状态。上壳体10呈圆柱形状，其外径对于200mm规格的晶圆约为250mm，对于300mm规格的晶圆则约为350mm。此外，有通孔穿过上壳体10，用以气体或液体管路穿过，以便用气压或液压控制抛光头100对晶圆200施加下压力。考虑到其结构特点及工况环境，上壳体10应选用强度高、韧性好、耐腐蚀的材料，如304#钢、316#钢、钛酸铝陶瓷等。Theupper housing 10 can be connected with a driving shaft, and the driving shaft drives thewafer 200 to rotate along theaxis 90 in a fixed direction during the polishing process. The driving shaft is perpendicular to thepolishing pad 300 during the polishing process. Theupper housing 10 is cylindrical, and its outer diameter is about 250mm for a 200mm wafer, and about 350mm for a 300mm wafer. In addition, there are through holes passing through theupper housing 10 for gas or liquid pipelines to pass through, so that thepolishing head 100 can be controlled by air pressure or hydraulic pressure to exert downward pressure on thewafer 200 . Considering its structural characteristics and working conditions, theupper casing 10 should be made of high strength, good toughness, and corrosion-resistant materials, such as 304# steel, 316# steel, aluminum titanate ceramics, etc.

基座20呈圆柱形状，其外径与上壳体10相一致。其上有用以形成保持环腔室的环状凹槽。基座20上与上壳体10相连接，下与保持环40及多腔室隔膜50相连接。基座20同样应选用强度高、韧性好、耐腐蚀的材料。Thebase 20 is cylindrical, and its outer diameter is consistent with that of theupper casing 10 . It has an annular groove for forming a retaining ring cavity. Thebase 20 is connected with theupper housing 10 on the upper side, and connected with theretaining ring 40 and themulti-chamber diaphragm 50 on the lower side. Thebase 20 should also be made of materials with high strength, good toughness and corrosion resistance.

保持环隔膜30是一环状薄膜，其完全覆盖在基座20的环状凹槽上，并利用钳制环74、75固定，从而形成保持环腔室66。保持环隔膜30通过钳制环74、75采用粘贴或机械连接或二者并用的方式固定。考虑到其结构特点及工况环境，保持环隔膜30的材料应为氟橡胶、硅橡胶或聚氨酯橡胶等弹性材料，厚度为0.2-3mm。Theretaining ring diaphragm 30 is an annular membrane that completely covers the annular groove of thebase 20 and is secured byclamping rings 74 , 75 to form theretaining ring chamber 66 . Theretaining ring diaphragm 30 is fixed through theclamping rings 74, 75 by adhesive or mechanical connection or both. Considering its structural features and working conditions, the material of theretaining ring diaphragm 30 should be elastic materials such as fluororubber, silicon rubber or polyurethane rubber, with a thickness of 0.2-3mm.

保持环40为一环状平板，其通过某种方式与保持环隔膜30连接，并经由保持环隔膜30浮动于保持环腔室66的下方，从而在基座20的正下方定义出一口袋区域，其大小恰好用来容纳晶圆200。在抛光过程中，保持环40的内环表面咬合晶圆200，以避免晶圆200从抛光头100底部滑出。在抛光过程中，保持环40直接与抛光垫200接触，其磨损、腐蚀情况非常严重，因此保持环40应选用强度高、弹性好、耐磨损、耐腐蚀、温差变形小的材料，PPS(Polyphenylene Sulfide聚苯硫醚)、PEEK(Poly Ether Ether Ketone，聚醚醚酮)等工程塑料为其较佳选择。Theretaining ring 40 is an annular flat plate, which is connected with theretaining ring diaphragm 30 in some way, and floats below theretaining ring chamber 66 through theretaining ring diaphragm 30, thereby defining a pocket area directly below thebase 20 , which is just sized to hold thewafer 200. During the polishing process, the inner ring surface of theholding ring 40 engages thewafer 200 to prevent thewafer 200 from slipping out from the bottom of thepolishing head 100 . During the polishing process, theretaining ring 40 is in direct contact with thepolishing pad 200, and its wear and corrosion are very serious. Therefore, theretaining ring 40 should be made of a material with high strength, good elasticity, wear resistance, corrosion resistance, and small deformation due to temperature difference, PPS ( Polyphenylene Sulfide (polyphenylene sulfide), PEEK (Poly Ether Ether Ketone, polyether ether ketone) and other engineering plastics are the best choices.

见图3和图4，保持环40的上部有一环状台阶41，保持环40通过环状台阶41的上表面与保持环隔膜30固定，从而保证了保持环40有足够的浮动空间。保持环40的下部有多个沿径向打通、均匀分布的凹槽42，凹槽42用作在抛光过程中液体及磨削的排入/排出通道。凹槽42的深度在2-5mm之间，数量在6-12个之间为宜。3 and 4, there is anannular step 41 on the upper part of theretaining ring 40, and theretaining ring 40 is fixed to theretaining ring diaphragm 30 through the upper surface of theannular step 41, thus ensuring that theretaining ring 40 has enough floating space. The lower part of theretaining ring 40 has a plurality ofgrooves 42 opened radially and evenly distributed, and thegrooves 42 are used as discharge in/out channels for liquid and grinding during the polishing process. The depth of thegrooves 42 is between 2-5mm, and the number is preferably between 6-12.

回到图1和图2，多腔室隔膜50呈圆盘状，其上集成有多个同心环状肋。多腔室隔膜50与基座20的下表面一起形成了多个相互独立的同心环状腔室61、62、63、64、65。在抛光过程中，多腔室隔膜50的下表面与晶圆200的背侧接触，并通过多个相互独立的同心环状腔室61、62、63、64、65对晶圆背侧施加气体或液体压力，形成下压力。对于200mm规格的晶圆，同心环状腔室以3个为佳，对于300mm规格的晶圆，同心环状腔室以5个为佳。该优选实施例中的同心环状腔室为5个。Referring back to FIG. 1 and FIG. 2 , themulti-chamber diaphragm 50 is in the shape of a disc with multiple concentric annular ribs integrated thereon. Themulti-chamber diaphragm 50 and the lower surface of the base 20 together form a plurality of mutually independent concentricannular chambers 61 , 62 , 63 , 64 , 65 . During the polishing process, the lower surface of themulti-chamber diaphragm 50 is in contact with the backside of thewafer 200, and gas is applied to the backside of the wafer through a plurality of mutually independent concentricannular chambers 61, 62, 63, 64, 65 Or liquid pressure, forming downforce. For a wafer with a specification of 200mm, three concentric annular chambers are preferred, and for a wafer with a specification of 300mm, five concentric annular chambers are preferred. There are five concentric annular chambers in this preferred embodiment.

见图5和图6，多腔室隔膜50的圆盘状平面上集成有5个同心环状肋51、52、53、54、55，这些同心环状肋的末端分别有一个垂直于该同心环状肋的环状平板51a、52a、53a、54a、55a。通过这些环状平板及钳制环71、72、73，多腔室隔膜50采用粘贴或机械连接或二者并用的方式固定在基座20上，形成多个相互独立的同心环状腔室61、62、63、64、65。考虑到其结构特点及工况环境，多腔室隔膜50的材料应为氟橡胶、硅橡胶或聚氨酯橡胶等弹性材料，厚度为0.2-3mm。See Fig. 5 and Fig. 6, five concentricannular ribs 51, 52, 53, 54, 55 are integrated on the disk-shaped plane of themulti-chamber diaphragm 50, and the ends of these concentric annular ribs respectively have a Annularflat plates 51a, 52a, 53a, 54a, 55a of annular ribs. Through these ring-shaped flat plates and clamping rings 71, 72, 73, themulti-chamber diaphragm 50 is fixed on thebase 20 by pasting or mechanical connection or both, forming a plurality of mutually independent concentric ring-shapedchambers 61, 62, 63, 64, 65. Considering its structural characteristics and working conditions, the material of themulti-chamber diaphragm 50 should be elastic materials such as fluororubber, silicon rubber or polyurethane rubber, with a thickness of 0.2-3 mm.

回到图1和图2，根据本发明的优选实施例，基座20上开有61a、62a、63a、64a、65a、66a等通孔，用于向同心环状腔室61、62、63、64、65及保持环腔室66中通入气体或液体，从而对晶圆200和保持环40施加下压力。改变通入气体量或液体量的大小即可改变不同腔室的压力大小，进而可以改变施加在晶圆200上相应区域和保持环40上的压力大小。Returning to Fig. 1 and Fig. 2, according to the preferred embodiment of the present invention, thebase 20 has throughholes 61a, 62a, 63a, 64a, 65a, 66a, etc. , 64 , 65 and the retainingring chamber 66 are fed with gas or liquid, so as to exert a downward force on thewafer 200 and the retainingring 40 . The pressure of different chambers can be changed by changing the amount of gas or liquid introduced, and thus the pressure applied to the corresponding area on thewafer 200 and the retainingring 40 can be changed.

前面提到，影响晶圆表面非均匀性的主要因素之一是金属/氧化层的非均匀沉积导致晶圆表面出现的高低落差。而本抛光头的多腔室设计能够对晶圆背侧的不同区域施加不同的压力，也就是说，对高的区域施加大一点的压力，这样抛光速率会更快，对低的区域施加小一些的压力，这样抛光速率会慢一些，如此以来就能够消除金属/氧化层的非均匀沉积导致的高低落差，使抛光后的晶圆表面达到较佳的均匀性。之所以把多腔室设计呈同心环状分布，是因为前道工序-金属/氧化层的沉积一般采用旋涂等方式进行，这些工艺形成的高低落差往往呈同心环状分布。As mentioned earlier, one of the main factors affecting the non-uniformity of the wafer surface is the uneven deposition of the metal/oxide layer resulting in a drop in height on the wafer surface. However, the multi-chamber design of the polishing head can apply different pressures to different areas on the backside of the wafer, that is, apply a little higher pressure to the high area, so that the polishing rate will be faster, and apply less pressure to the low area. Some pressure, so that the polishing rate will be slower, so that the height difference caused by the non-uniform deposition of the metal/oxide layer can be eliminated, so that the polished wafer surface can achieve better uniformity. The reason why the multi-chamber design is distributed in a concentric ring is because the deposition of the metal/oxide layer in the previous process is generally carried out by spin coating, etc., and the height difference formed by these processes is often distributed in a concentric ring.

与此同时，通过改变通入保持环腔室66中气体量或液体量的大小可改变作用在保持环40上的下压力，从而可以调节保持环40对抛光垫300的压缩程度，改善因抛光垫在晶圆边缘区域和在中心区域出现的典型作用差异而引起的边缘效应。At the same time, the downforce acting on the retainingring 40 can be changed by changing the amount of gas or liquid that passes into the retainingring chamber 66, so that the degree of compression of the retainingring 40 to thepolishing pad 300 can be adjusted to improve the polishing performance. Edge effects caused by the typical difference in action of the pads in the edge region of the wafer and in the center region.

本发明的抛光头能够改善晶圆边缘的非均匀性；能够调节晶圆表面材料的去除轮廓，以补偿晶圆上的结构层的非均匀沉积；能够实现低下压力抛光，进而能够获得优异的平坦化效果。The polishing head of the present invention can improve the non-uniformity of the wafer edge; can adjust the removal profile of the wafer surface material to compensate for the non-uniform deposition of the structural layer on the wafer; can realize low down pressure polishing, and then can obtain excellent flatness effect.

以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the technical principle of the present invention, some improvements and modifications can also be made. These improvements and modifications It should also be regarded as the protection scope of the present invention.

Claims

1, a kind of rubbing head that is used for chemically mechanical polishing is characterized in that, described rubbing head comprises:

Pedestal, there is annular recess in described pedestal lower edge zone;

The retaining ring barrier film is fixed on the below of described pedestal, forms the retaining ring chamber with described annular recess;

Retaining ring floats on the below of described retaining ring chamber by described retaining ring barrier film, and described retaining ring is provided with pocket area under described pedestal, be used for holding wafer;

Multi-cavity chamber barrier film, described multi-cavity chamber barrier film has the plate-like plane, is integrated with a plurality of concentric circular ribs on it, and the lower surface of described plate-like plane, concentric circular ribs and described pedestal forms a plurality of separate concentric annular chambers.

2, the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, described retaining ring chamber housing has gas or liquid, and the pressure of described gas or liquid is passed to described retaining ring by described retaining ring barrier film, forms downforce.

3. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1, it is characterized in that, described a plurality of separate concentric annular chamber housing has gas or liquid, and the pressure of described gas or liquid is passed to wafer by described multi-cavity chamber barrier film, forms downforce.

4. the rubbing head that is used for chemically mechanical polishing as claimed in claim 2 is characterized in that, the gas in the described retaining ring chamber or the pressure of liquid can be regulated.

5. the rubbing head that is used for chemically mechanical polishing as claimed in claim 3 is characterized in that, the gas in described a plurality of separate concentric annular chambers or the pressure of liquid can be regulated respectively.

6. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that the end of described concentric circular ribs has the annular plate perpendicular to described concentric circular ribs, is used for fixing with described pedestal.

7. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, described a plurality of separate concentric annular chambers are 3-5.

8. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, the material of described retaining ring barrier film and multi-cavity chamber barrier film is an elastomeric material, and described elastomeric material comprises fluorubber, silicon rubber or polyurethane rubber.

9. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, the fixed form of the fixed form of described retaining ring barrier film and described pedestal and described multi-cavity chamber barrier film and described pedestal is for adopting the mode of stickup and/or mechanical connection.

10. the rubbing head that is used for chemically mechanical polishing as claimed in claim 1 is characterized in that, the bottom of described retaining ring have a plurality ofly radially get through, equally distributed groove, described groove is used for entering/passing away in polishing process liquid and grinding.