CN101216358B - Mesh pressure sensor chip and preparation method, pressure distributed sensor - Google Patents

Abstract

Translated fromChinese

本发明公开了一种网格压力传感芯片及制备方法、压力分布式传感器。网格压力传感芯片包括有绝缘底层和上层，绝缘底层和上层之间设置有行电极和列电极架构层；行电极架构层中设置有多条行电极，列电极架构层中设置有多条列电极，行电极与列电极构成网格分布；行、列电极架构层之间设置中间层，中间层内设置多个压敏体并刚好位于行、列电极交叉点处；每个压敏体的两端面分别与行电极、列电极相接；绝缘底层和上层，行、列电极架构层以及中间层整体形成一个矩形片。压力分布式传感器包括框架，框架内拼接有偶数个网格压力传感芯片，框架内测两边设置有电极连接结构。本发明网格压力传感芯片及传感器可方便对某一局部接触面上的压力分布进行检测。

The invention discloses a grid pressure sensing chip, a preparation method and a distributed pressure sensor. The grid pressure sensing chip includes an insulating bottom layer and an upper layer, and a row electrode and a column electrode structure layer are arranged between the insulating bottom layer and the upper layer; a plurality of row electrodes are arranged in the row electrode structure layer, and a plurality of row electrodes are arranged in the column electrode structure layer. Column electrodes, row electrodes and column electrodes form a grid distribution; an intermediate layer is arranged between the row and column electrode structure layers, and multiple pressure-sensitive bodies are arranged in the middle layer and are just located at the intersection of the row and column electrodes; each pressure-sensitive body The two ends of the electrode are respectively connected to the row electrode and the column electrode; the insulating bottom layer and the upper layer, the row and column electrode structure layer and the middle layer form a rectangular sheet as a whole. The pressure distributed sensor includes a frame, and an even number of grid pressure sensing chips are spliced in the frame, and electrode connection structures are arranged on both sides of the frame. The grid pressure sensing chip and the sensor of the invention can conveniently detect the pressure distribution on a certain local contact surface.

Description

Translated fromChinese

网格压力传感芯片及制备方法、压力分布式传感器Mesh pressure sensor chip and preparation method, pressure distributed sensor

技术领域technical field

本发明涉及一种柔性薄膜网格压力传感芯片及制备方法、用该压力传感芯片组合而成的对某一局部接触面上的压力分布进行检测的压力分布式传感器。The invention relates to a flexible film grid pressure sensing chip and a preparation method thereof, and a pressure distributed sensor for detecting the pressure distribution on a certain local contact surface combined with the pressure sensing chip.

背景技术Background technique

压力传感器的检测原理是基于压敏材料受外界压力作用而引起弹性压缩变形从而使其电阻发生变化(压阻效应)，通过测量压敏材料电阻的变化，测量出外界压力的大小。压力传感器广泛应用于航空航天、军事工业、汽车船舶和医疗卫生等领域，正在发挥着越来越重要的作用。然而在一些特殊场合应用中，有时需对某一局部接触面上的压力分布进行检测，例如检测汽车轮胎在运转过程中或静止状态下对地面的压力分布；再如流动液体在某一静止接触面上压力分布。传统压力传感器由于重量、体积均较大，并且受工作空间小的限制，无法进行便捷的操作，不能满足局部接触面压力分布检测的要求。The detection principle of the pressure sensor is based on the elastic compression deformation of the pressure-sensitive material caused by the external pressure, so that its resistance changes (piezoresistive effect), and the external pressure is measured by measuring the change in the resistance of the pressure-sensitive material. Pressure sensors are widely used in aerospace, military industry, automobiles, ships, and medical and health fields, and are playing an increasingly important role. However, in some special occasions, it is sometimes necessary to detect the pressure distribution on a certain local contact surface, such as detecting the pressure distribution of a car tire on the ground during operation or in a static state; Pressure distribution on the surface. Due to the large weight and volume of the traditional pressure sensor, and the limitation of the small working space, it cannot be operated conveniently and cannot meet the requirements of local contact surface pressure distribution detection.

发明内容Contents of the invention

为了解决传统压力传感器不能对某一接触面上压力分布进行检测、体积大、重量重、操作不方便的缺点；本发明的目的在于提供一种柔性薄膜网格传感芯片以及基于MEMS【MicroElectroMechanical Systems，微型机械电子系统】工艺的制备方法，进一步的目的在于提供一种用该传感芯片组合而成的压力分布式传感器。可方便的对某一局部接触面上的压力分布进行检测。In order to solve the shortcomings of traditional pressure sensors that cannot detect the pressure distribution on a certain contact surface, large volume, heavy weight, and inconvenient operation; , the preparation method of the micro-mechanical electronic system] process, and the further purpose is to provide a pressure distributed sensor combined with the sensor chip. It is convenient to detect the pressure distribution on a certain local contact surface.

为达到以上目的，本发明是采取如下技术方案予以实现的：To achieve the above object, the present invention is achieved by taking the following technical solutions:

一种网格压力传感芯片，包括有压敏体，其特征在于，还包括有绝缘底层和绝缘上层，绝缘底层和绝缘上层之间设置有行电极架构层和列电极架构层；在行电极架构层中等间隔设置有多条行电极，在列电极架构层中等间隔设置有多条列电极，行电极与列电极构成网格分布，行、列电极延伸至各自架构层的两边分别形成行、列电极外接点；行电极架构层和列电极架构层之间设置中间层，所述的压敏体具有多个并刚好设置在行、列电极交叉点处的中间层内，每个压敏体的两端面分别与行电极、列电极相接；所述的绝缘底层和绝缘上层，行、列电极架构层以及中间层整体形成一个矩形片。A grid pressure sensing chip, including a pressure-sensitive body, is characterized in that it also includes an insulating bottom layer and an insulating upper layer, and a row electrode framework layer and a column electrode framework layer are arranged between the insulating bottom layer and the insulating upper layer; A plurality of row electrodes are arranged at equal intervals in the structure layer, and a plurality of column electrodes are arranged at equal intervals in the column electrode structure layer. The row electrodes and the column electrodes form a grid distribution, and the row and column electrodes extend to both sides of the respective structure layers to form row, Outer contact point of the column electrode; an intermediate layer is set between the row electrode framework layer and the column electrode framework layer, and the pressure sensitive body has multiple and is just arranged in the middle layer at the intersection of the row and column electrodes, each pressure sensitive body The two end faces of each are respectively connected to the row electrode and the column electrode; the insulating bottom layer and the insulating upper layer, the row and column electrode structure layer and the middle layer form a rectangular sheet as a whole.

上述方案中，所述的行电极数与列电极数相等，为四行、四列；所述的压敏体为圆柱形或方柱形。In the above solution, the number of row electrodes is equal to the number of column electrodes, which are four rows and four columns; the pressure sensitive body is cylindrical or square.

一种网格压力传感芯片的制备方法，包括下述步骤：A method for preparing a grid pressure sensor chip, comprising the steps of:

第一步：在绝缘底层上沉积一层行电极架构层；第二步：在行电极架构层上刻蚀行电极槽；第三步：在行电极槽中沉积导电金属形成行电极；第四步：通过机械精磨工艺去除行电极架构层上面多余的金属材料，使各行电极之间彼此绝缘；第五步：在行电极架构层及行电极上沉积中间层；第六步：在中间层刻规则行、列孔，每行孔正对行电极；第七步：在行、列孔中沉积压敏体，并去除中间层上面多余的压敏材料；第八步：在中间层及压敏体上沉积列电极架构层；第九步：在列电极架构层上刻蚀列电极槽；第十步：在列电极槽中沉积导电金属形成列电极，列电极正对中间层每列孔中的压敏体；第十一步：通过机械精磨工艺去除列电极架构层上面多余的金属材料，使各列电极之间彼此绝缘；第十二步：在列电极架构层及列电极上沉积一层绝缘上层。The first step: deposit a row electrode structure layer on the insulating bottom layer; the second step: etch the row electrode groove on the row electrode structure layer; the third step: deposit conductive metal in the row electrode groove to form the row electrode; the fourth step Step 1: Remove excess metal material on the row electrode frame layer by mechanical fine grinding process, so that the row electrodes are insulated from each other; Step 5: Deposit an intermediate layer on the row electrode frame layer and row electrodes; Step 6: In the middle layer Carve regular rows and columns of holes, each row of holes is facing the row electrode; Step 7: Deposit pressure-sensitive body in the row and column holes, and remove excess pressure-sensitive material on the middle layer; Step 8: In the middle layer and pressure-sensitive Deposit a column electrode framework layer on the sensitive body; Step 9: Etch column electrode grooves on the column electrode framework layer; Step 10: Deposit conductive metal in the column electrode grooves to form column electrodes, and the column electrodes are facing each column hole in the middle layer The pressure-sensitive body in the middle; the eleventh step: remove the excess metal material on the column electrode frame layer through a mechanical fine grinding process, so that the column electrodes are insulated from each other; the twelfth step: on the column electrode frame layer and the column electrode An insulating upper layer is deposited.

上述方法中，所述的行、列孔可刻成圆形或方形，其内沉积的压敏体即为圆柱形或方柱形。In the above method, the row and column holes can be engraved into a circle or a square, and the pressure-sensitive body deposited in the hole is a cylinder or a square column.

一种用前述网格压力传感芯片组合而成的压力分布式传感器，其特征在于，包括矩形传感器框架，传感器框架内拼接有数个网格压力传感芯片，网格压力传感芯片相互拼接处的行电极外接点相互连接，相互拼接处的列电极外接点相互连接；传感器框架的两两对边分别设置有电极连接结构，网格压力传感芯片与传感器框架两两对边接触处的行、列电极外接点与该电极连接结构连接。A pressure distributed sensor combined with the aforementioned grid pressure sensing chips is characterized in that it includes a rectangular sensor frame, several grid pressure sensing chips are spliced in the sensor frame, and the joints of the grid pressure sensing chips are The outer contact points of the row electrodes are connected to each other, and the outer contact points of the column electrodes at the joints are connected to each other; the two opposite sides of the sensor frame are respectively provided with electrode connection structures, and the row electrodes at the two opposite sides of the grid pressure sensing chip and the sensor frame are connected. , The external contact point of the column electrode is connected to the electrode connection structure.

所述的电极连接结构包括电极连接件和设置在传感器框架内侧的工字插槽，电极连接件上设置有工字凸轨和外接引线孔，电极连接件装配时，所述的工字凸轨与工字插槽相吻合；外接引线孔连接检测导线。The electrode connection structure includes an electrode connector and an I-shaped slot arranged inside the sensor frame. The electrode connector is provided with an I-shaped protruding rail and an external lead hole. When the electrode connector is assembled, the I-shaped protruding rail It matches the I-shaped slot; the external lead hole is connected to the detection wire.

本发明的柔性薄膜网格压力传感芯片行、列电极数相等，同时导电特性也相同；因此该传感芯片具有较好的匹配特性。只要将连接好的芯片置于某一被检测面上，便可测量出该处接触面上的压力分布。The flexible film grid pressure sensing chip of the present invention has the same number of row and column electrodes and the same electrical conductivity; therefore, the sensing chip has better matching characteristics. As long as the connected chip is placed on a certain surface to be tested, the pressure distribution on the contact surface can be measured.

本发明的柔性薄膜网格压力传感器除了导电电极外露外，内部检测元件及行列电极始终均处于绝缘受保护状态；同时由传感芯片间的匹配特性好，可任意组合而成所需要面积的压力分布式检测传感器，因此其具有体积小、重量轻、超薄、非侵入式检测、操作简单方便的优点。本发明柔性薄膜网格压力传感芯片及由此组合而成的压力分布式检测传感器可很好地满足对某一局部接触面上的压力分布进行检测的特殊需要，精确的完成检测任务。In the flexible film grid pressure sensor of the present invention, except for the exposed conductive electrodes, the internal detection elements and the row and column electrodes are always in an insulated and protected state; at the same time, due to the good matching characteristics between the sensor chips, it can be combined arbitrarily to form the pressure of the required area. Distributed detection sensors, so it has the advantages of small size, light weight, ultra-thin, non-invasive detection, simple and convenient operation. The flexible film grid pressure sensing chip of the present invention and the pressure distributed detection sensor combined therefrom can well meet the special needs of detecting the pressure distribution on a certain local contact surface, and accurately complete the detection task.

附图说明Description of drawings

图1是本发明的网格压力传感芯片的结构示意图。FIG. 1 is a schematic structural diagram of a grid pressure sensing chip of the present invention.

图2是图1网格压力传感芯片的压敏体及行、列电极分布图。Fig. 2 is a distribution diagram of the pressure sensitive body and the row and column electrodes of the grid pressure sensing chip in Fig. 1 .

图3是图1网格压力传感芯片制备过程中的产品结构变化图。其中图3(1)-图3(12)分别表示了步骤1到步骤12所形成的传感芯片的形态。Fig. 3 is a diagram of product structure changes during the preparation process of the grid pressure sensing chip in Fig. 1 . 3(1)-3(12) respectively show the morphology of the sensor chip formed instep 1 tostep 12.

图4是用图1网格压力传感芯片组合而成的压力分布式传感器结构示意图。Fig. 4 is a schematic structural diagram of a pressure distributed sensor combined with the grid pressure sensing chip in Fig. 1 .

图5是图4中电极连接结构的装配图。FIG. 5 is an assembly diagram of the electrode connection structure in FIG. 4 .

图6是图1网格压力传感芯片的一种应用示意图。Fig. 6 is a schematic diagram of an application of the grid pressure sensing chip in Fig. 1 .

图7是图4网格压力传感芯片组合而成的一种压力分布式传感器的应用示意图。FIG. 7 is an application schematic diagram of a distributed pressure sensor formed by combining the grid pressure sensor chips in FIG. 4 .

图1、图2、图4和图5中：1、绝缘底层；2、行电极架构层；3、行电极；4、中间层；5、压敏体；6、列电极架构层；7、列电极；8、绝缘上层；9、行电极外接点；9’、列电极外接点；10、传感芯片；11、传感器框架；12、电极连接结构；13、电极连接件；14、工字凸轨；15、工字插槽；16、电极连接面；17、外接引线孔。In Fig. 1, Fig. 2, Fig. 4 and Fig. 5: 1. Insulation bottom layer; 2. Row electrode structure layer; 3. Row electrode; 4. Intermediate layer; 5. Pressure sensitive body; 6. Column electrode structure layer; 7. Column electrode; 8. Insulation upper layer; 9. External contact of row electrode; 9', External contact of column electrode; 10. Sensor chip; 11. Sensor frame; 12. Electrode connection structure; 13. Electrode connector; 14. I-shaped Convex rail; 15. I-shaped slot; 16. Electrode connection surface; 17. External lead hole.

具体实施方式Detailed ways

下面结合附图及实施例对本发明作进一步的详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

如图1图2所示，一种网格压力传感芯片，包括有绝缘底层1和绝缘上层8，绝缘底层1和绝缘上层9之间设置有行电极架构层2和列电极架构层6；在行电极架构层2中等间隔设置有4条行电极3，在列电极架构层6中等间隔设置有4条列电极7，行电极3与列电极7构成网格分布，行、列电极3、7延伸至各自架构层的两边分别形成行、列电极外接点9、9’；行电极架构层2和列电极架构层6之间设置中间层4，16个压敏体5设置在行、列电极交叉点处的中间层4内，每个压敏体15的两端面分别与行电极3、列电极7相接；压敏体为圆柱形或方柱形。绝缘底层1和绝缘上层8，行、列电极架构层2、6以及中间层4整体形成一个方形片。As shown in Fig. 1 and Fig. 2, a grid pressure sensing chip includes aninsulating bottom layer 1 and an insulatingupper layer 8, and a rowelectrode framework layer 2 and a columnelectrode framework layer 6 are arranged between theinsulating bottom layer 1 and the insulatingupper layer 9; Fourrow electrodes 3 are arranged at equal intervals in the rowelectrode framework layer 2, and fourcolumn electrodes 7 are arranged at equal intervals in the columnelectrode framework layer 6. Therow electrodes 3 and thecolumn electrodes 7 form a grid distribution, and the row andcolumn electrodes 3, 7 extends to both sides of the respective structure layers to form row and column electrodeexternal contacts 9 and 9' respectively; anintermediate layer 4 is arranged between the rowelectrode structure layer 2 and the columnelectrode structure layer 6, and 16 pressure-sensitive bodies 5 are arranged in the rows and columns In themiddle layer 4 at the intersection of the electrodes, the two ends of each pressure-sensitive body 15 are in contact with therow electrode 3 and thecolumn electrode 7 respectively; the pressure-sensitive body is cylindrical or square. The insulatingbottom layer 1 and the insulatingupper layer 8, the row and columnelectrode structure layers 2, 6 and themiddle layer 4 form a square sheet as a whole.

如图3(1)-图3(12)所示，本发明柔性薄膜网格压力传感芯片的制备方法包括以下步骤：取绝缘底层1作为制作的基础层，在绝缘底层1上沉积一层行电极架构层2，接着在此行电极架构层2上刻蚀行电极槽；接着向行电极架构层2上的沟槽中沉积导电金属以便形成行电极3；再通过机械精磨工艺去除多余的金属材料，清洗磨掉的金属粒子以使各行电极之间彼此绝缘；接着在行电极3及行电极架构层2上沉积中间层4，然后在此中间层4上刻规则行、列圆孔或者方孔，每行孔正对行电极3，再向这些孔中沉积压敏材料形成压敏体5，接着去除残留在中间层4上其他区域的压敏材料；在压敏体5及中间层4上再沉积一层列电极架构层6，然后在此列电极架构层6上刻蚀出列电极沟槽；接着在列电极架构层6的列电极沟槽中沉积列电极7，再通过机械精磨去除多余的电极金属材料并清洗，以使各列电极7之间彼此绝缘；最后在列电极7及列电极架构层6上沉积一层绝缘上层8。柔性薄膜网格压力传感芯片便制作完成了。As shown in Figure 3 (1)-Figure 3 (12), the preparation method of the flexible film grid pressure sensor chip of the present invention comprises the following steps: take theinsulating bottom layer 1 as the base layer of making, deposit a layer on theinsulating bottom layer 1 Rowelectrode structure layer 2, and then etch row electrode grooves on the rowelectrode structure layer 2; then deposit conductive metal in the grooves on the rowelectrode structure layer 2 to formrow electrodes 3; then remove excess by mechanical fine grinding process Metal material, cleaning the ground metal particles to insulate the row electrodes from each other; then deposit themiddle layer 4 on therow electrode 3 and the rowelectrode frame layer 2, and then engrave regular rows and columns of round holes on themiddle layer 4 Or square holes, each row of holes is facing therow electrodes 3, and then deposit pressure-sensitive materials in these holes to form a pressure-sensitive body 5, and then remove the pressure-sensitive materials remaining in other areas on theintermediate layer 4; between the pressure-sensitive body 5 and the middle On thelayer 4, deposit a columnelectrode structure layer 6 again, and then etch a column electrode groove on the columnelectrode structure layer 6; then deposit acolumn electrode 7 in the column electrode groove of the columnelectrode structure layer 6, and then pass The excess electrode metal material is removed by mechanical fine grinding and cleaned to insulate thecolumn electrodes 7 from each other; finally, an insulatingupper layer 8 is deposited on thecolumn electrodes 7 and the columnelectrode framework layer 6 . The flexible film grid pressure sensor chip is fabricated.

绝缘底层1和绝缘上层8所用材料相同，可使用的材料有：云母片、有机玻璃、工程塑料、玻璃纤维，本实施例采用有机玻璃。行、列电极架构层2、6：可使用的材料有：有机玻璃、导热绝缘陶瓷、石英、氮化硅，本实施例采用导热绝缘陶瓷。中间层4采用导热绝缘橡胶。压敏体5可使用的材料有：ZnO、SiC、Cu₂O、BaTiO₃，Fe₂O₃，SnO₂、GaAs、WO、Ti₂O₃，本实施例采用ZnO。行、列电极3、7可使用的材料有：Au、Ag、Cu、Al，本实施例采用Ag。The materials used for theinsulating bottom layer 1 and the insulatingupper layer 8 are the same, and the materials that can be used are: mica sheet, plexiglass, engineering plastics, glass fiber, and plexiglass is used in this embodiment. Row and columnelectrode structure layers 2 and 6: available materials include: plexiglass, heat-conducting and insulating ceramics, quartz, and silicon nitride. This embodiment uses heat-conducting and insulating ceramics. Themiddle layer 4 adopts heat-conducting and insulating rubber. The materials that can be used for the pressuresensitive body 5 are: ZnO, SiC, Cu₂ O, BaTiO₃ , Fe₂ O₃ , SnO₂ , GaAs, WO, Ti₂ O₃ , ZnO is used in this embodiment. Materials that can be used for the row andcolumn electrodes 3 and 7 are: Au, Ag, Cu, Al, and Ag is used in this embodiment.

如图4图5所示，一种用图1所示的网格压力传感芯片组合而成的压力分布式传感器，包括用工程塑料或硬质木材做成的一个有底矩形框架11，框架内拼接有4个网格压力传感芯片10，传感芯片相互拼接处的行电极外接点9相互连接，相互拼接处的列电极外接点9’相互连接；框架11的两两对边内侧设置有工字插槽14(共32个)，工字插槽15中装插有电极连接件13，电极连接件上的工字凸轨14与工字插槽15相吻合，电极连接件13朝向传感器框架内的一侧为电极连接面16；传感芯片10与框架11两两对边接触处的行、列电极外接点9、9’与电极连接面16接触连接；每个电极连接件13露出工字插槽14的部分开有外接引线孔17，可用于连接检测导线。As shown in Figure 4 and Figure 5, a pressure distributed sensor combined with the grid pressure sensing chip shown in Figure 1 includes a bottomedrectangular frame 11 made of engineering plastics or hard wood, the frame There are 4 gridpressure sensing chips 10 spliced inside, and theouter contact points 9 of the row electrodes at the joints of the sensor chips are connected to each other, and the outer contact points 9' of the column electrodes at the joints are connected to each other; There are I-shaped slots 14 (32 in total), andelectrode connectors 13 are inserted into the I-shapedslots 15. The I-shapedconvex rails 14 on the electrode connectors match the I-shapedslots 15, and theelectrode connectors 13 face One side of the sensor frame is theelectrode connection surface 16; the row and column electrodeexternal contacts 9, 9' at the contact point between thesensor chip 10 and theframe 11 are in contact with theelectrode connection surface 16; eachelectrode connector 13 The part that exposes the I-shapedslot 14 has an externallead hole 17, which can be used to connect the detection wire.

本发明柔性薄膜网格压力传感芯片的检测原理是：当有外力作用于传感芯片相应的行、列电极3、7交叉处即传感点处时，压敏体5的电阻因受到了压力作用便发生了一定变形，从而引起了传感点处压敏体电阻值的变化，反映在电路上便是某一被扫描的行、列电极之间的电压值发生了变化；根据交叉点处的压敏体5电压变化便可反映出被扫描点处外力的大小。The detection principle of the flexible thin-film grid pressure sensing chip of the present invention is: when an external force acts on the sensor chip at the intersection of the corresponding row andcolumn electrodes 3 and 7, that is, at the sensing point, the resistance of the pressure-sensitive body 5 is affected by the The pressure will cause a certain deformation, which will cause the change of the resistance value of the piezo-sensitive body at the sensing point, which is reflected in the circuit as the voltage value between a scanned row and column electrode has changed; according to the intersection point The voltage change of the pressuresensitive body 5 at the point can reflect the magnitude of the external force at the scanned point.

如图6所示，芯片上每个交叉点处压力的检测是通过控制扫描电路对任意行列电极间压敏体5的电压进行不断扫描而实现的，由于该芯片中具有行列电极架构层2、6、中间层4；因此当外围电路对芯片扫描时，这些绝缘架构可有效防止导电电极金属粒子(如银粒子)的迁移以及由此而引起的行电极3或者列电极7之间电极短路自通现象，消除行、列电极之间的寄生电容与寄生电阻。也就是说，这些绝缘架构从结构上提高了电路的检测精度和抗干扰能力。As shown in Figure 6, the detection of the pressure at each cross point on the chip is realized by controlling the scanning circuit to continuously scan the voltage of the pressuresensitive body 5 between any row and column electrodes. Since the chip has row and columnelectrode architecture layers 2, 6. Themiddle layer 4; therefore, when the peripheral circuit scans the chip, these insulating structures can effectively prevent the migration of conductive electrode metal particles (such as silver particles) and the resulting short circuit between therow electrodes 3 or thecolumn electrodes 7. The pass phenomenon eliminates the parasitic capacitance and parasitic resistance between the row and column electrodes. That is to say, these insulating structures structurally improve the detection accuracy and anti-interference ability of the circuit.

如图7所示，由于本发明实施例的柔性薄膜网格压力传感芯片行列电极数均为4，各种计算机的检测电路接口位数是8位、16位、32位或者64位；因此由该传感芯片组合而成的压力分布检测传感器的检测线路可方便地与计算机检测电路接口进行对接。因为行列电极两端均被暴露在外面，芯片上其他各处均被绝缘，同时芯片上行列电极数相等。因此这样的传感芯片可按偶数任意连接组合成所需要的压力分布检测传感器，检测可操作形状接触面上的压力分布。图7中所示为用4个传感芯片组成的检测传感器，行列电极均构成8位扫描。如果需对某一较大面上的压力进行检测时，可先设计一个与所检测面积相差无几的组合框架，然后在此框架内装配传感芯片(图4)。As shown in Figure 7, since the number of rows and columns of electrodes of the flexible film grid pressure sensor chip of the embodiment of the present invention is 4, the detection circuit interface digits of various computers are 8, 16, 32 or 64; therefore The detection circuit of the pressure distribution detection sensor combined by the sensor chip can be conveniently connected with the computer detection circuit interface. Because both ends of the row and column electrodes are exposed outside, other places on the chip are insulated, and the number of row and column electrodes on the chip is equal. Therefore, such sensor chips can be connected in any even number to form a required pressure distribution detection sensor to detect the pressure distribution on the contact surface of the operable shape. Figure 7 shows a detection sensor composed of 4 sensor chips, and the row and column electrodes constitute an 8-bit scan. If it is necessary to detect the pressure on a larger surface, a combined frame that is almost the same as the area to be detected can be designed first, and then the sensor chip can be assembled in this frame (Figure 4).

Claims (6)

1. a grid pressure sensing chip includes varistor body, it is characterized in that, also includes insulating bottom layer and insulation upper strata, is provided with column electrode framework layer and row electrode framework layer between insulating bottom layer and the insulation upper strata; The electrode framework layer of being expert at is medium to be arranged at intervals with many column electrodes, be arranged at intervals with many row electrodes in that row electrode framework layer is medium, column electrode and the distribution of row electrode formation grid, row, column electrode extend to separately, and the both sides of framework layer form the outer contact of row, column electrode respectively; Between column electrode framework layer and the row electrode framework layer middle layer is set, described varistor body has a plurality of and just is arranged in the middle layer at row, column electrode crossings place, and the both ends of the surface of each varistor body are joined with column electrode, row electrode respectively; Described insulating bottom layer and insulation upper strata, rectangular sheet of the whole formation in row, column electrode framework layer and middle layer.

2. grid pressure sensing chip as claimed in claim 1 is characterized in that, described column electrode number equates with the row number of electrodes, is four.

3. the preparation method of grid pressure sensing chip according to claim 1 is characterized in that, comprises the steps:

The first step: deposition one deck column electrode framework layer on insulating bottom layer; Second step: etching column electrode groove on the electrode framework layer of being expert at; The 3rd step: conductive metal deposition forms column electrode in the slot electrode of being expert at; The 4th step: remove unnecessary metal material above the column electrode framework layer by mechanical fine grinding technology, make between each column electrode insulated from each other; The 5th step: deposit the middle layer on be expert at electrode framework layer and the column electrode; The 6th step: carve regular row, column hole in the middle layer, every capable hole is over against column electrode; The 7th step: the deposition pressure sensitive forms varistor body in the row, column hole, and removes unnecessary pressure sensitive above the middle layer; The 8th step: deposition row electrode framework layer on middle layer and varistor body; The 9th step: etching row slot electrode on row electrode framework layer; The tenth step: conductive metal deposition forms the row electrode in the row slot electrode, the varistor body of row electrode in every row hole, middle layer; The 11 step: remove unnecessary metal material above the row electrode framework layer by mechanical fine grinding technology, make between each row electrode insulated from each other; The 12 step: deposition one deck insulation upper strata on row electrode framework layer and row electrode.

4. as the preparation method of grid pressure sensing chip as described in the claim 3, it is characterized in that described column electrode number equates with the row number of electrodes, is four.

5. as the preparation method of grid pressure sensing chip as described in claim 3 or 4, it is characterized in that described row, column hole is carved into circular or square, varistor body of deposition should be cylindrical or square column type mutually in it.

6. pressure distributed sensor that combines with the described grid pressure sensing chip of claim 1, it is characterized in that, comprise the rectangular sensor framework, splicing has the even number grid pressure sensing chip in the sensor frame, the grid pressure sensing chip column electrode of splicing place mutually interconnects between the contact outward, interconnects between the outer contact of row electrode; The opposite side in twos of sensor frame is respectively arranged with electrode connecting structure, and grid pressure sensing chip and the sensor frame outer contact of row, column electrode of butt edge joint's synapsis in twos are connected with this electrode connecting structure; Described electrode connecting structure comprises electrode connecting parts and is arranged on the I-shaped slot of sensor frame inboard, electrode connecting parts is provided with I-shaped protruding rail and external lead wire hole, during the electrode connecting parts assembling, described I-shaped protruding rail and I-shaped slot match, and the side of electrode connecting parts in sensor frame is the electrode joint face; Grid pressure sensing chip and the sensor frame outer contact of row, column electrode of butt edge joint's synapsis in twos contact with described electrode joint face and are connected; Described external lead wire hole joint detection lead.

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