CN101208811A - semiconductor light emitting device - Google Patents

Abstract

The invention discloses a semiconductor light emitting device. A semiconductor light-emitting device (10) has a semiconductor chip (12) that emits light having a wavelength in the blue region to the ultraviolet region, and a sealing portion (16) that is formed in at least a partial region on a passage path through which the light passes. The sealing part (16) comprises a sealing material (16d) made of a composite material containing a base material (16a) and fine particles (16b), and a fluorescent material (16c), wherein the base material (16a) is made of resin; the fine particles (16b) are made of an inorganic material and dispersed in the matrix (16a), and the effective particle diameter of the fine particles (16b) is not more than one-fourth of the wavelength of light inside the matrix (16 a).

Description

Translated fromChinese

半导体发光装置semiconductor light emitting device

技术领域technical field

[0001]本发明涉及一种将LED(Light Emitting Diode：发光二极管)芯片等半导体芯片封装化而成的半导体发光装置。[0001] The present invention relates to a semiconductor light-emitting device that encapsulates semiconductor chips such as LED (Light Emitting Diode: light emitting diode) chips.

背景技术Background technique

[0002]近年来，白光LED装置已被实用化，作为取代荧光灯的照明部件备受关注。[0002] In recent years, white LED devices have been put into practical use, and have attracted attention as lighting components that replace fluorescent lamps.

[0003]人们开发出了采用氮化镓(GaN)化合物半导体的、发蓝光区到紫外光区的光的LED芯片，这促进了白光LED装置的实用化。[0003] People have developed LED chips using gallium nitride (GaN) compound semiconductors that emit light from the blue light region to the ultraviolet light region, which promotes the practical application of white light LED devices.

[0004]利用发蓝光区到紫外光区的光的LED芯片得到白光的方法，主要有两种(例如，参照非专利文献1。)：第一，是利用蓝光LED芯片所放射出的蓝光、和用蓝光激发铈掺杂钇铝石榴石(YAG:Ce)等荧光材料来得到的黄光得到白光的方法；第二，是用发紫光区到紫外光区的光的LED芯片所放射的光激发多种荧光材料，得到红、绿及蓝这些所谓的三原色的光，来得到白光的方法。Y₂O₂S:Eu(简称为P22-RE3)被用作红光用荧光材料。ZnS:Cu，Al(简称为P22-GN4)或(Ba，Mg)Al₁₀O₁₇:Eu，Mn(简称为LP-G3)被用作绿光用荧光材料。(Sr，Ca，Ba，Mg)₁₀(PO₄)₆C₁₂:Eu(简称为LP-B1)或(Ba，Mg)Al₁₀O₁₇:Eu(简称为LP-B4)被用作蓝光用荧光材料。The method that utilizes the LED chip that sends out the light of blue light region to the light of ultraviolet light region to obtain white light mainly contains two kinds (for example, with reference tonon-patent literature 1.): the first is to utilize the blue light emitted by the blue light LED chip, And use blue light to excite cerium-doped yttrium aluminum garnet (YAG:Ce) and other fluorescent materials to obtain white light; the second is to use the light emitted by LED chips that emit light from the purple to ultraviolet regions A method of exciting a variety of fluorescent materials to obtain the so-called three primary colors of red, green, and blue light to obtain white light. Y₂ O₂ S:Eu (abbreviated as P22-RE3) is used as a fluorescent material for red light. ZnS:Cu,Al (abbreviated as P22-GN4) or (Ba,Mg)Al₁₀ O₁₇ :Eu,Mn (abbreviated as LP-G3) is used as a fluorescent material for green light. (Sr, Ca, Ba, Mg)₁₀ (PO₄ )₆ C₁₂ :Eu (abbreviated as LP-B1) or (Ba, Mg)Al₁₀ O₁₇ :Eu (abbreviated as LP-B4) are used for Blu-ray fluorescent material.

[0005]白光LED装置，是通过用密封用树脂材料将发蓝光区到紫外光区的光的LED芯片和所述荧光材料封装化来实现的。作为代表性封装方式，有将密封用树脂材料形成为炮弹型的结构(例如，参照非专利文献2。)。[0005] The white light LED device is realized by encapsulating the LED chip emitting light from the blue light region to the ultraviolet light region and the fluorescent material with a resin material for sealing. As a typical encapsulation method, there is a structure in which a sealing resin material is formed into a cannonball shape (see, for example, Non-PatentDocument 2.).

[0006]下面，参照图45，对具有炮弹型封装形状的现有白光LED装置进行说明。[0006] Next, with reference to FIG. 45, a description will be given of a conventional white LED device having a cannonball-shaped package shape.

[0007]如图45所示，在现有例所涉及的白光LED装置100中，发蓝光区到紫外光区的光的LED芯片102通过糊(paste)状银材料或糊状绝缘材料等芯片固定用糊状材料103固定在芯片垫(die pad)部的底面上，该芯片垫设置在第一引线框101A的一个端部并呈碗状。As shown in FIG. 45, in the whitelight LED device 100 involved in the prior art example, theLED chip 102 that emits light from the blue light region to the ultraviolet light region passes through chips such as paste (paste) silver material or paste insulating material. Afixing paste material 103 is fixed on the bottom surface of a die pad portion which is provided at one end of thefirst lead frame 101A and has a bowl shape.

[0008]在LED芯片102的上表面上，形成有第一电极104A和第二电极104B。第一电极104A，通过第一金属线105A与第一引线框101A电连接，第二电极104B通过第二金属线105B与和第一引线框101A配成对的第二引线框101B电连接。[0008] On the upper surface of theLED chip 102, afirst electrode 104A and asecond electrode 104B are formed. Thefirst electrode 104A is electrically connected to thefirst lead frame 101A through thefirst metal wire 105A, and thesecond electrode 104B is electrically connected to thesecond lead frame 101B paired with thefirst lead frame 101A through thesecond metal wire 105B.

[0009]LED芯片102，被成形为炮弹状的树脂材料105密封。一般用环氧树脂或硅树脂等对可见光透明的树脂材料作为树脂材料105。在树脂材料105中，混合有所述荧光材料106(例如，参照专利文献1)。[0009] TheLED chip 102 is sealed with aresin material 105 shaped like a cannonball. Generally, a resin material transparent to visible light such as epoxy resin or silicone resin is used as theresin material 105 . The above-mentionedfluorescent material 106 is mixed in the resin material 105 (for example, refer to Patent Document 1).

非专利文献1：只友一行及其他著《三菱电线工业时报》第99号、2002年7月、第35到第41页Non-Patent Document 1: "Mitsubishi Electric Wire Industry Times" No. 99, July 2002, pages 35 to 41 by Yuki and his colleagues

非专利文献2：杉本胜及其他著《松下电工技报》第53号、No.1、第4到第9页Non-Patent Document 2: Masaru Sugimoto and others, "Matsushita Electric Technical Bulletin" No. 53, No. 1, pages 4 to 9

专利文献1：日本公开专利公报特开2004-71908号公报Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-71908

专利文献2：日本公开专利公报特开2005-93724号公报Patent Document 2: Japanese Laid-Open Patent Publication No. 2005-93724

[0010]然而，在对上述现有白光LED装置100采用环氧树脂或硅树脂作为密封用树脂材料105的情况下，会出现下述问题。[0010] However, in the case where epoxy resin or silicone resin is used as the sealingresin material 105 for the above-mentioned conventionalwhite LED device 100, the following problems arise.

[0011]在采用环氧树脂的情况下，会有环氧树脂变为黄色的问题。就是说，由LED芯片102放射出的、蓝光区到紫外光区的光使环氧树脂变成黄色，使得白光LED装置100所发的发光亮度会减低，色调会变化。鉴于此，密封用树脂材料105需要有耐光性和耐热性。[0011] In the case of using an epoxy resin, there is a problem that the epoxy resin turns yellow. That is to say, the light from the blue light range to the ultraviolet light range emitted by theLED chip 102 turns the epoxy resin yellow, so that the brightness of the light emitted by the whitelight LED device 100 will decrease and the color tone will change. In view of this, the sealingresin material 105 needs to have light resistance and heat resistance.

[0012]在芯片固定用糊状材料103由树脂构成的情况下，LED芯片102所放射的光会使芯片固定用糊状材料103变色，使得发光亮度会减低，光强度会恶化。这也是一个问题。[0012] When thepaste material 103 for chip fixing is made of resin, the light emitted by theLED chip 102 will discolor thepaste material 103 for chip fixing, so that the luminous brightness will decrease and the light intensity will deteriorate. This is also a problem.

[0013]而且，从外部入射的、紫外光区的光也会使构成半导体发光装置的树脂材料105及荧光材料106恶化，甚至还会使由树脂构成的芯片固定用糊状材料103恶化。这也是一个问题。[0013] Moreover, incident light from the outside in the ultraviolet region will also deteriorate theresin material 105 andfluorescent material 106 that constitute the semiconductor light-emitting device, and even deteriorate the chipfixing paste material 103 made of resin. This is also a problem.

[0014]另一方面，硅树脂有下述问题，即：因为与环氧树脂相比，硅树脂的的光折射率更低，所以LED芯片102所放射的光容易发生全反射，使得从LED芯片102提取的光提取效率较低(例如，参照专利文献2。)。[0014] On the other hand, the silicone resin has the following problem, that is, because the light refractive index of the silicone resin is lower than that of the epoxy resin, the light emitted by theLED chip 102 is prone to total reflection, so that The light extraction efficiency extracted by thechip 102 is low (for example, refer toPatent Document 2.).

[0015]补充说明一下，因为和LED芯片(特别是氮化镓半导体)的折射率比较起来，环氧树脂的折射率非常低，所以即使在使用环氧树脂的情况下，也不应该算是光提取效率足够高。[0015] As an additional explanation, because the refractive index of epoxy resin is very low compared with the refractive index of LED chip (especially gallium nitride semiconductor), so even in the case of using epoxy resin, it should not be regarded as a light source. The extraction efficiency is high enough.

[0016]不仅仅是发出发光波长在蓝光区到紫外光区的光的LED芯片，发光波长比蓝光长的LED芯片也不应该算是光提取效率足够高。[0016] Not only LED chips emitting light with a light emission wavelength in the blue light region to the ultraviolet light region, LED chips with light emission wavelengths longer than blue light should not be regarded as having a high enough light extraction efficiency.

发明内容Contents of the invention

[0017]本发明，正是为解决所述问题而研究开发出来的。其目的在于：谋求对形成有发光元件的半导体芯片进行密封的密封材料的耐光性、耐热性及光提取效率的提高。[0017] The present invention has been researched and developed to solve the problem. Its purpose is to improve the light resistance, heat resistance, and light extraction efficiency of a sealing material that seals a semiconductor chip on which a light emitting element is formed.

[0018]为了达成上述目的，在本发明中设为下述结构，即：使构成半导体发光装置的密封部的基体材料包含由无机材料构成的、有效粒径在发光波长的四分之一以下的粒子。In order to achieve the above-mentioned object, be set as following structure in the present invention, promptly: make the matrix material that forms the sealing portion of semiconductor light-emitting device comprise to comprise by inorganic material, effective particle diameter is below 1/4 of light-emitting wavelength particle of.

[0019]具体而言，本发明所涉及的第一半导体发光装置，包括放出波长在蓝光区到紫外光区的光的半导体芯片，和形成在光所通过的通过路径上的至少一部分区域中的密封部；密封部包含密封材料和荧光材料，该密封材料由包含基体材料和粒子的复合材料构成，所述粒子由无机材料构成，已分散在该基体材料中，所述粒子的有效粒径在基体材料内部的光的波长的四分之一以下。Specifically, the first semiconductor light-emitting device involved in the present invention includes a semiconductor chip that emits light with a wavelength in the blue light region to the ultraviolet light region, and is formed in at least a part of the area on the passing path through which the light passes. A sealing part; the sealing part comprises a sealing material and a fluorescent material, and the sealing material is composed of a composite material comprising a matrix material and particles, the particles are composed of inorganic materials dispersed in the matrix material, and the effective particle diameter of the particles is between Less than a quarter of the wavelength of light inside the matrix material.

[0020]根据第一半导体发光装置，因为已分散在密封部的基体材料中的粒子由无机材料构成，所以与不包含所述由无机材料构成的粒子的情况相比密封部的耐光性和耐热性有所提高。而且，因为已分散在基体材料中的粒子的有效粒径在半导体芯片所放射的光的波长的四分之一以下，所以不会损害密封部的透明性，就是说不会对光提取效率造成不良影响。补充说明一下，若粒子的大小充分地小于光的波长，就可以将分散有无机粒子的复合材料看作没有折射率偏差的、均一的介质。若粒子的直径在光的波长的四分之一以下，复合材料中的光的散射就只有瑞利散射，因而很少出现透光性恶化的情况。[0020] According to the first semiconductor light-emitting device, since the particles dispersed in the matrix material of the sealing portion are composed of inorganic materials, the light resistance and resistance of the sealing portion are compared with the case where the particles composed of inorganic materials are not included. Heat has been improved. Moreover, because the effective particle size of the particles dispersed in the matrix material is below a quarter of the wavelength of light emitted by the semiconductor chip, the transparency of the sealing portion will not be damaged, that is to say, the light extraction efficiency will not be affected. adverse effects. In addition, if the size of the particles is sufficiently smaller than the wavelength of light, the composite material in which the inorganic particles are dispersed can be regarded as a homogeneous medium without deviation in the refractive index. If the diameter of the particle is less than a quarter of the wavelength of light, the scattering of light in the composite material is only Rayleigh scattering, so the light transmission is rarely deteriorated.

[0021]最好是这样的，在第一半导体发光装置中，密封部形成为覆盖半导体芯片的周围。[0021] Preferably, in the first semiconductor light emitting device, the sealing portion is formed to cover the periphery of the semiconductor chip.

[0022]这样，密封部的机械强度就很大，耐热性也有所提高，不易产生密封部的剥离和裂缝。[0022] In this way, the mechanical strength of the sealing portion is very high, and the heat resistance is also improved, so that peeling and cracking of the sealing portion are not easy to occur.

[0023]最好是这样的，在第一半导体发光装置中，密封部形成为与半导体芯片相接触。[0023] Preferably, in the first semiconductor light emitting device, the sealing portion is formed in contact with the semiconductor chip.

[0024]在密封部和半导体芯片如上所述接触的情况下，与使密封部的基体材料不包含粒子的结构相比密封部及半导体芯片相互间的热膨胀系数之差更小，因此密封部也不易产生剥离及裂缝。In the case where the sealing portion and the semiconductor chip are in contact as described above, the difference in coefficient of thermal expansion between the sealing portion and the semiconductor chip is smaller than that in which the base material of the sealing portion does not contain particles, so the sealing portion is also Not easy to peel off and crack.

[0025]最好是这样的，在第一半导体发光装置中，密封部由第一密封部和第二密封部构成，该第一密封部由密封材料构成；该第二密封部形成在该第一密封部的外侧，包含荧光材料。[0025] Preferably, in the first semiconductor light-emitting device, the sealing portion is composed of a first sealing portion and a second sealing portion, the first sealing portion is composed of a sealing material; the second sealing portion is formed on the first sealing portion The outer side of a sealing part contains fluorescent material.

[0026]如上所述，通过将由为复合材料的密封材料构成的第一密封部配置在离半导体芯片较近而因此光密度较高的部分，能够实现从半导体芯片提取的、很高的光提取效率，并能够得到很强的耐光性和耐热性。而且，通过将透明性强于复合材料并且包含荧光材料的第二密封部配置在离半导体芯片较远而因此光密度较低的部分，能够提高第二密封部的透光性。其结果是，能够提高从半导体发光装置提取的光提取效率。[0026] As described above, by arranging the first sealing portion made of a sealing material that is a composite material at a portion that is closer to the semiconductor chip and thus has a higher optical density, it is possible to realize high light extraction from the semiconductor chip. Efficiency, and can get strong light fastness and heat resistance. Furthermore, the light transmittance of the second sealing portion can be improved by arranging the second sealing portion that is more transparent than the composite material and includes a fluorescent material in a portion that is farther from the semiconductor chip and thus has a lower optical density. As a result, the light extraction efficiency from the semiconductor light emitting device can be improved.

[0027]最好是这样的，在第一密封部由复合材料构成的情况下，所述半导体发光装置还包括设置在第一密封部中的半导体芯片的至少下方及侧边、让光反射的反射部件。[0027] Preferably, in the case where the first sealing portion is made of a composite material, the semiconductor light-emitting device further includes at least the bottom and sides of the semiconductor chip arranged in the first sealing portion, allowing light reflection reflective parts.

[0028]这样，含在构成位于半导体芯片一侧的第一密封部的复合材料中的粒子就如下所述使蓝光区到紫外光区的光谱衰减，红光区等短波长一侧的光谱相对地增大。在本说明书中，将该现象称为过滤效应。通过利用过滤效应，平均演色性指数(Ra)升高，能够降低色温。In this way, the particles contained in the composite material constituting the first sealing portion on the side of the semiconductor chip attenuate the spectrum from the blue light region to the ultraviolet light region as described below, and the spectra on the short wavelength side such as the red light region are relatively to increase. In this specification, this phenomenon is referred to as a filtering effect. By utilizing the filtering effect, the average color rendering index (Ra) is increased, and the color temperature can be lowered.

[0029]再说，在该情况下，最好是这样的，密封材料是用具有透明性的糊状材料固定着半导体芯片、并且被反射部件支撑着的底层(underlyinglayer)。[0029] Furthermore, in this case, it is preferable that the sealing material is an underlying layer in which the semiconductor chip is fixed with a transparent paste material and supported by the reflective member.

[0030]如上所述，因为固定半导体芯片的糊状材料是透明的，所以即使将复合材料用作底层，平均演色性指数(Ra)由于含在底层中的粒子所带来的过滤效应也升高，并能够降低色温。[0030] As described above, since the paste material for fixing the semiconductor chip is transparent, even if a composite material is used as the bottom layer, the average color rendering index (Ra) increases due to the filtering effect of the particles contained in the bottom layer. High, and can lower the color temperature.

[0031]最好是这样的，在第一半导体发光装置中，密封部由第一密封部和第二密封部构成，该第一密封部由密封材料构成；该第二密封部形成在该第一密封部的外侧。粒子由吸收紫外光区的光的材料构成。[0031] Preferably, in the first semiconductor light emitting device, the sealing portion is composed of a first sealing portion and a second sealing portion, the first sealing portion is composed of a sealing material; the second sealing portion is formed on the first sealing portion an outer side of the sealing portion. The particles are composed of materials that absorb light in the ultraviolet region.

[0032]这样，就能通过含在构成第一密封部的复合材料中的、吸收紫外光区的光的粒子来抑制紫外光使由树脂等构成的密封材料恶化的现象。[0032] In this way, the deterioration of the sealing material made of resin or the like by ultraviolet light can be suppressed by the particles contained in the composite material constituting the first sealing portion that absorb light in the ultraviolet region.

[0033]最好是这样的，在第一半导体发光装置中，密封部由第一密封部和第二密封部构成，该第一密封部包含荧光材料；该第二密封部形成在该第一密封部的外侧，由密封材料构成。[0033] Preferably, in the first semiconductor light emitting device, the sealing portion is composed of a first sealing portion and a second sealing portion, the first sealing portion contains a fluorescent material; the second sealing portion is formed on the first The outside of the sealing portion is made of a sealing material.

[0034]这样，构成形成在第一密封部的外侧的第二密封部的复合材料所包含的粒子使蓝光区到紫外光区的光谱衰减，能够得到红光区等短波长一侧的光谱相对地增大的过滤效应。这样，就能够提高平均演色性指数(Ra)，并降低色温。In this way, the particles contained in the composite material forming the second sealing portion formed on the outside of the first sealing portion attenuate the spectrum from the blue light region to the ultraviolet light region, and can obtain relatively short-wavelength spectra such as the red light region. Greatly increased filtering effect. In this way, the average color rendering index (Ra) can be increased and the color temperature can be lowered.

[0035]本发明所涉及的第二半导体发光装置，包括放出光的半导体芯片，和形成在光所通过的通过路径上的至少一部分区域中的密封部。密封部包含由包含基体材料和粒子的复合材料构成的密封材料，所述粒子由无机材料构成，已分散在该基体材料中，所述粒子的有效粒径在基体材料内部的光的波长的四分之一以下，并且，所述密封部由覆盖半导体芯片的第一密封部和形成在该第一密封部的外侧的第二密封部构成。第一密封部的、根据光的波长决定的第一折射率，高于第二密封部的、根据光的波长决定的第二折射率。[0035] A second semiconductor light-emitting device according to the present invention includes a semiconductor chip that emits light, and a sealing portion formed in at least a part of an area along a path through which the light passes. The sealing portion includes a sealing material composed of a composite material including a matrix material and particles, the particles being composed of an inorganic material, dispersed in the matrix material, and the effective particle diameter of the particles is four times the wavelength of light inside the matrix material. In addition, the sealing portion is composed of a first sealing portion covering the semiconductor chip and a second sealing portion formed outside the first sealing portion. The first refractive index of the first sealing portion determined according to the wavelength of light is higher than the second refractive index of the second sealing portion determined according to the wavelength of light.

[0036]根据第二半导体发光装置，因为与第一半导体发光装置一样，密封部包含由无机材料构成、已分散在基体材料中、并且有效粒径在基体材料内部的光的波长的四分之一以下的粒子，所以密封部的耐光性和耐热性提高，并且不会对密封部的透明性造成不良影响。而且，因为第一密封部的根据光的波长决定的第一折射率高于第二密封部的根据光的波长决定的第二折射率，所以整个密封部的折射率在位于半导体芯片一侧的内侧区域较高，并且在位于该内侧区域的外侧的外侧区域较低。因此，外侧区域的折射率较低，使得半导体芯片所出射的出射光的全反射减低，结果光提取效率提高。[0036] According to the second semiconductor light-emitting device, because, like the first semiconductor light-emitting device, the sealing portion contains a quarter of the wavelength of light that is composed of an inorganic material, dispersed in the matrix material, and has an effective particle diameter inside thematrix material 1 or less particles, so the light resistance and heat resistance of the sealing part are improved, and the transparency of the sealing part will not be adversely affected. And, because the first refractive index determined according to the wavelength of light of the first sealing portion is higher than the second refractive index determined according to the wavelength of light of the second sealing portion, the refractive index of the entire sealing portion is higher than that of the semiconductor chip side. The inner region is higher, and the outer region is lower on the outer side of the inner region. Therefore, the refractive index of the outer region is lower, so that the total reflection of the outgoing light emitted by the semiconductor chip is reduced, and as a result, the light extraction efficiency is improved.

[0037]最好是这样的，在第二半导体发光装置中，含在第一密封部中的粒子的组成和含在第二密封部中的粒子的组成不同。[0037] Preferably, in the second semiconductor light emitting device, the composition of the particles contained in the first sealing portion is different from the composition of the particles contained in the second sealing portion.

[0038]这样，例如通过使第一密封部包含具有折射率高于含在第二密封部中的粒子的折射率的组成的粒子，就能够确实地使第一密封部的折射率高于第二密封部的折射率。[0038] Thus, for example, by making the first sealing portion contain particles having a composition having a refractive index higher than that of particles contained in the second sealing portion, the refractive index of the first sealing portion can be reliably made higher than that of the second sealing portion. Second, the refractive index of the sealing part.

[0039]最好是这样的，在第二半导体发光装置中，第一密封部中的粒子在复合材料中所占的比例，高于第二密封部中的粒子在复合材料中所占的比例。[0039] Preferably, in the second semiconductor light-emitting device, the proportion of the particles in the first sealing portion in the composite material is higher than the proportion of the particles in the second sealing portion in the composite material .

[0040]这样，就能够确实地使第一密封部的折射率高于第二密封部的折射率。[0040] In this way, it is possible to surely make the refractive index of the first sealing portion higher than the refractive index of the second sealing portion.

[0041]本发明所涉及的第三半导体发光装置，包括放出光的半导体芯片，和形成在光所通过的通过路径上的至少一部分区域中的密封部。密封部包含由包含基体材料和粒子的复合材料构成的密封材料，所述粒子由无机材料构成，已分散在该基体材料中，所述粒子的有效粒径在基体材料内部的光的波长的四分之一以下，并且，根据光的波长决定的折射率设定为从离半导体芯片近的内侧区域向外侧区域逐渐变低。[0041] A third semiconductor light-emitting device according to the present invention includes a semiconductor chip that emits light, and a sealing portion formed in at least a partial region of a passage path through which the light passes. The sealing portion includes a sealing material composed of a composite material including a matrix material and particles, the particles being composed of an inorganic material, dispersed in the matrix material, and the effective particle diameter of the particles is four times the wavelength of light inside the matrix material. In addition, the refractive index determined according to the wavelength of light is set to gradually decrease from the inner region closer to the semiconductor chip to the outer region.

[0042]根据第三半导体发光装置，因为与第一半导体发光装置一样，密封部包含由无机材料构成、已分散在基体材料中、并且有效粒径在基体材料内部的光的波长的四分之一以下的粒子，所以密封部的耐光性和耐热性提高，并且不会对密封部的透明性造成不良影响。而且，因为根据光的波长决定的折射率设定为从离半导体芯片近的内侧区域向外侧区域逐渐变低，所以整个密封部的折射率在位于半导体芯片一侧的内侧区域较高，并且在位于该内侧区域的外侧的外侧区域较低。因此，外侧区域的折射率较低，使得半导体芯片所出射的出射光的全反射减低，结果光提取效率提高。[0042] According to the third semiconductor light-emitting device, because, like the first semiconductor light-emitting device, the sealing portion contains a quarter of the wavelength of light that is composed of an inorganic material, dispersed in the matrix material, and has an effective particle diameter inside thematrix material 1 or less particles, so the light resistance and heat resistance of the sealing part are improved, and the transparency of the sealing part will not be adversely affected. And, because the refractive index determined according to the wavelength of light is set to be gradually lower from the inner region closer to the semiconductor chip to the outer region, the refractive index of the entire sealing portion is higher in the inner region on the semiconductor chip side, and in The outer region located on the outer side of this inner region is lower. Therefore, the refractive index of the outer region is lower, so that the total reflection of the outgoing light emitted by the semiconductor chip is reduced, and as a result, the light extraction efficiency is improved.

[0043]最好是这样的，在第三半导体发光装置中，在密封部中，离半导体芯片较近的内侧区域中的粒子在复合材料中所占的比例高于处在该内侧区域的外侧的外侧区域中的所述粒子在复合材料中所占的比例。[0043] Preferably, in the third semiconductor light-emitting device, in the sealing portion, the proportion of particles in the composite material in the inner region closer to the semiconductor chip is higher than that in the outer region of the inner region The proportion of the particles in the outer region of the composite material.

[0044]这样，就能够确实地使密封部中的内侧区域的折射率高于外侧区域的折射率。[0044] In this way, the refractive index of the inner region of the sealing portion can be reliably made higher than the refractive index of the outer region.

[0045]最好是这样的，在第三半导体发光装置中，在含在密封部中的粒子中，含在密封部的内侧的粒子的组成、和含在密封部的外侧的粒子的组成不同。[0045] Preferably, in the third semiconductor light-emitting device, among the particles contained in the sealing portion, the composition of the particles contained inside the sealing portion is different from the composition of the particles contained outside the sealing portion. .

[0046]这样，例如通过使密封部的内侧区域包含具有折射率高于含在密封部的外侧区域中的粒子的折射率的组成的粒子，就能够确实地使密封部中的内侧区域的折射率高于外侧区域的折射率。In this way, for example, by making the inner region of the sealing part contain particles having a composition having a refractive index higher than that of the particles contained in the outer region of the sealing part, the refractive index of the inner region in the sealing part can be reliably made The index of refraction is higher than that of the outer region.

[0047]本发明所涉及的第四半导体发光装置，包括放出光的半导体芯片，和形成在光所通过的通过路径上的至少一部分区域中的密封部。密封部包含由包含基体材料和粒子的复合材料构成的密封材料，所述粒子由无机材料构成，已分散在该基体材料中，所述粒子的有效粒径在基体材料内部的光的波长的四分之一以下，并且，密封部由覆盖半导体芯片的第一密封部和形成在该第一密封部的外侧的第二密封部构成。第二密封部，包含用来作为粒子的、由吸收紫外光区的光的材料构成的粒子。[0047] A fourth semiconductor light-emitting device according to the present invention includes a semiconductor chip that emits light, and a sealing portion formed in at least a part of an area along a path through which the light passes. The sealing portion includes a sealing material composed of a composite material including a matrix material and particles, the particles being composed of an inorganic material, dispersed in the matrix material, and the effective particle diameter of the particles is four times the wavelength of light inside the matrix material. In addition, the sealing portion is composed of a first sealing portion covering the semiconductor chip and a second sealing portion formed outside the first sealing portion. The second sealing part contains particles made of a material that absorbs light in the ultraviolet region as particles.

[0048]根据第四半导体发光装置，因为第二密封部包含用来作为所述粒子的、由吸收紫外光区的光的材料构成的粒子，所以能够在半导体芯片所放出的光包含紫外光区的波长成分的情况下抑制不需要的紫外光被放出。此外，也能够使添加在第二密封部中的粒子吸收从外部入射的紫外光，因此能够防止密封材料等的恶化。[0048] According to the fourth semiconductor light-emitting device, since the second sealing portion contains particles that are used as the particles and are composed of a material that absorbs light in the ultraviolet region, it is possible to emit light in the semiconductor chip that includes the ultraviolet region. Unnecessary ultraviolet light is suppressed from being emitted in the case of the wavelength component. In addition, the particles added to the second sealing portion can also absorb ultraviolet light incident from the outside, so that deterioration of the sealing material and the like can be prevented.

[0049]最好是这样的，在第四半导体发光装置中，第二密封部形成为：覆盖半导体芯片的上方、下方及侧边。[0049] Preferably, in the fourth semiconductor light emitting device, the second sealing portion is formed to cover the upper side, the lower side and the side of the semiconductor chip.

[0050]第五半导体发光装置，包括放出波长在蓝光区到紫外光区的光的半导体芯片，形成在光所通过的通过路径上的至少一部分区域中的密封部，支撑半导体芯片的支撑部件，以及固定半导体芯片和支撑部件的、具有透明性的糊状材料。糊状材料由包含基体材料和粒子的复合材料构成，所述粒子由无机材料构成，已分散在该基体材料中，所述粒子的有效粒径在基体材料内部的光的波长的四分之一以下。粒子由吸收紫外光区的光的材料构成。The fifth semiconductor light-emitting device, including a semiconductor chip that emits light with a wavelength in the blue light region to the ultraviolet light region, a sealing portion formed in at least a part of the area on the passing path through which the light passes, and a support member that supports the semiconductor chip, And transparent paste materials for fixing semiconductor chips and supporting parts. The pasty material consists of a composite material comprising a matrix material and particles, composed of inorganic material, dispersed in the matrix material, the particles having an effective particle size of one quarter of the wavelength of light inside the matrix material the following. The particles are composed of materials that absorb light in the ultraviolet region.

[0051]根据第五半导体发光装置，因为固定半导体芯片和支撑部件的、具有透明性的糊状材料由包含无机材料所构成的粒子的复合材料构成，所述粒子由吸收紫外光区的光的材料构成，所以能够抑制糊状材料由于紫外光的影响而恶化并变色，使得发光亮度减低的现象。因为糊状材料是透明的，所以能够将半导体芯片所放出的光透过糊状材料输出到外部。因此，光提取效率提高。此外，半导体芯片所产生的热向支撑部件放热的放热性，通过由复合材料构成的糊状材料提高。[0051] According to the fifth semiconductor light-emitting device, since the transparent pasty material for fixing the semiconductor chip and the supporting member is composed of a composite material containing particles composed of inorganic materials, the particles are composed of particles that absorb light in the ultraviolet region. Material composition, so it can prevent the pasty material from deteriorating and discoloring due to the influence of ultraviolet light, so that the phenomenon that the luminous brightness is reduced. Since the paste material is transparent, light emitted from the semiconductor chip can be transmitted to the outside through the paste material. Therefore, light extraction efficiency improves. In addition, the heat dissipation of the heat generated by the semiconductor chip to the support member is improved by the paste material made of the composite material.

[0052]最好是这样的，在第二或第三半导体发光装置中，密封部包含荧光材料。[0052] Preferably, in the second or third semiconductor light emitting device, the sealing portion contains a fluorescent material.

[0053]这样，就能在半导体芯片所出射的出射光是蓝光区或紫外光区的光的情况下激发荧光材料，得到白光。[0053] In this way, the fluorescent material can be excited to obtain white light when the outgoing light emitted by the semiconductor chip is light in the blue light region or the ultraviolet light region.

[0054]最好是这样的，在第一到第三半导体发光装置中，粒子由无机化合物构成。[0054] Preferably, in the first to third semiconductor light-emitting devices, the particles are composed of an inorganic compound.

[0055]这样，就能够增加可以选择的、用来提高耐光性、耐热性或机械强度的材料的种类。[0055] In this way, it is possible to increase the types of materials that can be selected to improve light resistance, heat resistance, or mechanical strength.

[0056]最好是这样的，在第一到第三半导体发光装置中，基体材料由树脂材料构成。[0056] Preferably, in the first to third semiconductor light emitting devices, the base material is composed of a resin material.

[0057]这样，密封部的成形性就提高。[0057] Thus, the formability of the sealing portion is improved.

[0058]在该情况下，树脂材料最好是无机高分子材料。这样，就能容易地提高耐光性和耐热性。[0058] In this case, the resin material is preferably an inorganic polymer material. Thus, light resistance and heat resistance can be easily improved.

[0059]或者，在该情况下，树脂材料最好是有机高分子材料。这样，就能够容易地提高成形性。[0059] Alternatively, in this case, the resin material is preferably an organic polymer material. In this way, formability can be easily improved.

[0060]最好是这样的，在第一到第三半导体发光装置中，基体材料由对可见光透明的材料构成。[0060] Preferably, in the first to third semiconductor light emitting devices, the base material is composed of a material transparent to visible light.

[0061]这样，密封部的透明性就进一步提高。因此，光提取效率进一步提高。[0061] Thus, the transparency of the sealing portion is further improved. Therefore, light extraction efficiency is further improved.

[0062]最好是这样的，在第一到第三半导体发光装置中，复合材料是对可见光透明的。[0062] Preferably, in the first to third semiconductor light emitting devices, the composite material is transparent to visible light.

[0063]这样，密封部的透明性就进一步提高。因此，光提取效率进一步提高。[0063] Thus, the transparency of the sealing portion is further improved. Therefore, light extraction efficiency is further improved.

[0064]最好是这样的，在第一到第三半导体发光装置中，粒子的根据光的波长决定的折射率，高于基体材料的根据光的波长决定的折射率，并且与半导体芯片的折射率相等或在该半导体芯片的折射率以下。[0064] Preferably, in the first to third semiconductor light-emitting devices, the particles have a refractive index determined according to the wavelength of light that is higher than the refractive index of the base material determined according to the wavelength of light, and is compatible with that of the semiconductor chip. The refractive index is equal to or lower than that of the semiconductor chip.

[0065]这样，就与未添加粒子的情况相比密封部的折射率更高，因而光提取效率进一步提高。[0065] In this way, the refractive index of the sealing portion is higher than that in the case where no particles are added, so that the light extraction efficiency is further improved.

[0066]最好是这样的，在第一到第三半导体发光装置中，粒子在复合材料中所占的体积百分比在5％以上且60％以下。[0066] Preferably, in the first to third semiconductor light-emitting devices, the volume percentage of the particles in the composite material is not less than 5% and not more than 60%.

[0067]这样，就能够在充分地确保复合材料的透明性的状态下提高该复合材料的耐光性和耐热性。补充说明一下，更好的是粒子在复合材料中所占的体积百分比在10％以上且50％以下，比上述两者更好的是粒子在复合材料中所占的体积百分比在20％以上且40％以下。[0067] In this way, the light resistance and heat resistance of the composite material can be improved while sufficiently ensuring the transparency of the composite material. As an additional note, it is better that the volume percentage of the particles in the composite material is more than 10% and less than 50%, and it is better than the above two that the volume percentage of the particles in the composite material is more than 20% and 40% or less.

[0068]最好是这样的，在第一或第三半导体发光装置中，密封部的外形呈半球状。[0068] Preferably, in the first or third semiconductor light emitting device, the outer shape of the sealing portion is hemispherical.

[0069]这样，就能够提高抑制半导体芯片所出射的出射光所造成的全反射的效果。[0069] In this way, the effect of suppressing the total reflection caused by the outgoing light emitted by the semiconductor chip can be enhanced.

[0070]最好是这样的，在第一或第三半导体发光装置中，密封部的剖面外形呈四角形。[0070] Preferably, in the first or third semiconductor light-emitting device, the cross-sectional shape of the sealing portion is quadrangular.

[0071]这样，就能够利用印刷法等涂上由复合材料构成的密封材料，能够容易地进行形成。而且，因为上表面由平面构成，所以能够容易地用作器件。[0071] In this way, a sealing material made of a composite material can be applied by printing or the like, and can be easily formed. Also, since the upper surface is composed of a plane, it can be easily used as a device.

[0072]最好是这样的，在第一半导体发光装置具有第一密封部和第二密封部的情况下、或在第三半导体发光装置中，第一密封部和第二密封部的外形呈半球状。[0072] Preferably, in the case where the first semiconductor light emitting device has the first sealing portion and the second sealing portion, or in the third semiconductor light emitting device, the outer shapes of the first sealing portion and the second sealing portion are Hemispherical.

[0073]最好是这样的，在第一半导体发光装置具有第一密封部和第二密封部的情况下、或在第三半导体发光装置中，第一密封部的剖面外形呈四角形，第二密封部的外形呈半球状。[0073] Preferably, in the case where the first semiconductor light emitting device has a first sealing portion and a second sealing portion, or in the third semiconductor light emitting device, the cross-sectional shape of the first sealing portion is quadrangular, and the second sealing portion The outer shape of the sealing part is hemispherical.

[0074]最好是这样的，在第一半导体发光装置具有第一密封部和第二密封部的情况下、或在第三半导体发光装置中，第一密封部和第二密封部的剖面外形呈四角形。[0074] Preferably, in the case where the first semiconductor light emitting device has the first sealing portion and the second sealing portion, or in the third semiconductor light emitting device, the cross-sectional shape of the first sealing portion and the second sealing portion It is quadrangular.

[0075]最好是这样的，在第一半导体发光装置具有第一密封部和第二密封部的情况下、或在第三半导体发光装置中，第一密封部的外形呈半球状，第二密封部的剖面外形呈四角形。[0075] Preferably, in the case where the first semiconductor light emitting device has a first sealing portion and a second sealing portion, or in the third semiconductor light emitting device, the first sealing portion has a hemispherical shape, and the second sealing portion The cross-sectional shape of the sealing portion is quadrangular.

[0076]最好是这样的，第一到第三半导体发光装置还包括：设置在密封部中的半导体芯片的侧边的区域中、让光反射的反射部件。[0076] It is preferable that the first to third semiconductor light-emitting devices further include: a reflective member provided in a region of a side of the semiconductor chip in the sealing portion to reflect light.

[0077]这样，光提取效率进一步提高。[0077] In this way, the light extraction efficiency is further improved.

[0078]最好是这样的，在该情况下，密封部的剖面形状呈下边窄而上边宽的倒锥形。[0078] It is preferable that in this case, the cross-sectional shape of the sealing portion is an inverted tapered shape with a narrow bottom and a wide top.

-发明的效果--The effect of the invention-

[0079]根据本发明的半导体发光装置，能够实现使用寿命长且亮度高的白光LED等半导体发光装置。[0079] According to the semiconductor light emitting device of the present invention, it is possible to realize a semiconductor light emitting device such as a white LED having a long service life and high brightness.

附图说明Description of drawings

[0080]图1是示意的剖面图，表示本发明的第一实施例所涉及的半导体发光装置。1 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first embodiment of the present invention.

图2是剖面图，放大而表示本发明的第一实施例所涉及的半导体发光装置中的密封部。FIG. 2 is a cross-sectional view showing enlargedly a sealing portion in the semiconductor light emitting device according to the first embodiment of the present invention.

图3是图表，用来说明对第一实施例所涉及的半导体发光装置中的密封部添加的微粒的有效粒径。FIG. 3 is a graph illustrating the effective particle diameters of particles added to the sealing portion of the semiconductor light emitting device according to the first embodiment.

图4是图表，表示本发明的第一实施例所涉及的半导体发光装置中的密封部(复合材料)的折射率与微粒添加量(体积比)之间的关系。4 is a graph showing the relationship between the refractive index of the sealing portion (composite material) and the amount of fine particles added (volume ratio) in the semiconductor light emitting device according to the first embodiment of the present invention.

图5是示意的剖面图，表示本发明的第二实施例所涉及的半导体发光装置。5 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second embodiment of the present invention.

图6是示意的剖面图，表示本发明的第三实施例所涉及的半导体发光装置。6 is a schematic cross-sectional view showing a semiconductor light emitting device according to a third embodiment of the present invention.

图7是示意的剖面图，表示本发明的第四实施例所涉及的半导体发光装置。7 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth embodiment of the present invention.

图8是示意的剖面图，表示本发明的第五实施例所涉及的半导体发光装置。8 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth embodiment of the present invention.

图9(a)是为每种构成本发明的第五实施例所涉及的半导体发光装置中的LED芯片的衬底的材料通过模拟试验求出密封部的折射率与出射光的总光通量的变化率之间的关系而做的图表；图9(b)是为每种构成本发明的第五实施例所涉及的半导体发光装置中的LED芯片的衬底的材料通过模拟试验求出密封部的折射率与总光通量之间的关系而做的图表。Fig. 9(a) shows the changes in the refractive index of the sealing portion and the total luminous flux of outgoing light obtained through simulation tests for each material constituting the substrate of the LED chip in the semiconductor light emitting device according to the fifth embodiment of the present invention. Figure 9(b) is a graph of the relationship between the ratios; Fig. 9 (b) is for each material that constitutes the substrate of the LED chip in the semiconductor light emitting device related to the fifth embodiment of the present invention through a simulation test to obtain the sealing portion. A graph of the relationship between the refractive index and the total luminous flux.

图10是示意的剖面图，表示本发明的第六实施例所涉及的半导体发光装置。10 is a schematic cross-sectional view showing a semiconductor light emitting device according to a sixth embodiment of the present invention.

图11是示意的剖面图，表示本发明的第六实施例的第一变形例所涉及的半导体发光装置。11 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first modified example of the sixth embodiment of the present invention.

图12是示意的剖面图，表示本发明的第六实施例的第二变形例所涉及的半导体发光装置。12 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modified example of the sixth embodiment of the present invention.

图13是示意的剖面图，表示本发明的第六实施例的第三变形例所涉及的半导体发光装置。13 is a schematic cross-sectional view showing a semiconductor light emitting device according to a third modified example of the sixth embodiment of the present invention.

图14是示意的剖面图，表示本发明的第六实施例的第四变形例所涉及的半导体发光装置。14 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modified example of the sixth embodiment of the present invention.

图15(a)和图15(b)是通过模拟试验对本发明的第六实施例的第四变形例所涉及的半导体发光装置求出第一密封部及第二密封部的各种折射率与光提取效率之间的关系而做的图表。Fig. 15(a) and Fig. 15(b) are obtained by simulation tests for the semiconductor light-emitting device according to the fourth modified example of the sixth embodiment of the present invention, and the various refractive indices and values of the first sealing part and the second sealing part are obtained. A graph made of the relationship between light extraction efficiency.

图16是示意的剖面图，表示本发明的第六实施例的第五变形例所涉及的半导体发光装置。16 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modified example of the sixth embodiment of the present invention.

图17是示意的剖面图，表示本发明的第六实施例的第六变形例所涉及的半导体发光装置。17 is a schematic cross-sectional view showing a semiconductor light emitting device according to a sixth modified example of the sixth embodiment of the present invention.

图18是示意的剖面图，表示本发明的第六实施例的第七变形例所涉及的半导体发光装置。18 is a schematic cross-sectional view showing a semiconductor light emitting device according to a seventh modification of the sixth embodiment of the present invention.

图19是示意的剖面图，表示本发明的第七实施例所涉及的半导体发光装置。Fig. 19 is a schematic cross-sectional view showing a semiconductor light emitting device according to a seventh embodiment of the present invention.

图20是示意的剖面图，表示本发明的第七实施例的第一变形例所涉及的半导体发光装置。20 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first modified example of the seventh embodiment of the present invention.

图21是示意的剖面图，表示本发明的第七实施例的第二变形例所涉及的半导体发光装置。21 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modified example of the seventh embodiment of the present invention.

图22是示意的剖面图，表示本发明的第七实施例的第三变形例所涉及的半导体发光装置。22 is a schematic cross-sectional view showing a semiconductor light emitting device according to a third modified example of the seventh embodiment of the present invention.

图23是示意的剖面图，表示本发明的第七实施例的第四变形例所涉及的半导体发光装置。23 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modified example of the seventh embodiment of the present invention.

图24是示意的剖面图，表示本发明的第七实施例的第五变形例所涉及的半导体发光装置。24 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modified example of the seventh embodiment of the present invention.

图25是示意的剖面图，表示本发明的第七实施例的第六变形例所涉及的半导体发光装置。25 isa schematic cross-sectional view showing a semiconductor light emitting device according to a sixth modification of the seventh embodiment of the present invention.

图26是示意的剖面图，表示本发明的第七实施例的第七变形例所涉及的半导体发光装置。26 is a schematic cross-sectional view showing a semiconductor light emitting device according to a seventh modified example of the seventh embodiment of the present invention.

图27是示意的剖面图，表示本发明的第八实施例所涉及的半导体发光装置。Fig. 27 is a schematic cross-sectional view showing a semiconductor light emitting device according to an eighth embodiment of the present invention.

图28是示意的剖面图，表示本发明的第八实施例的第一变形例所涉及的半导体发光装置。28 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first modification of the eighth embodiment of the present invention.

图29是示意的剖面图，表示本发明的第八实施例的第二变形例所涉及的半导体发光装置。29 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modified example of the eighth embodiment of the present invention.

图30是示意的剖面图，表示本发明的第九实施例所涉及的半导体发光装置。Fig. 30 is a schematic cross-sectional view showing a semiconductor light emitting device according to a ninth embodiment of the present invention.

图31是示意的剖面图，表示本发明的第九实施例的第一变形例所涉及的半导体发光装置。31 is a schematic cross-sectional view showing a semiconductor light emitting device according to a first modification of the ninth embodiment of the present invention.

图32是示意的剖面图，表示本发明的第九实施例的第二变形例所涉及的半导体发光装置。32 is a schematic cross-sectional view showing a semiconductor light emitting device according to a second modified example of the ninth embodiment of the present invention.

图33是示意的剖面图，表示本发明的第十实施例所涉及的半导体发光装置。33 is a schematic cross-sectional view showing a semiconductor light emitting device according to a tenth embodiment of the present invention.

图34是图表，表示在本发明的第十实施例所涉及的半导体发光装置中，将所添加的微粒相对基体材料的体积百分比设为30％而构成的密封材料的光的波长与透光率之间的关系。34 is a graph showing wavelengths of light and light transmittance of a sealing material configured by setting the volume percentage of added fine particles to the base material to 30% in the semiconductor light-emitting device according to the tenth embodiment of the present invention. The relationship between.

图35是图表，表示本发明的第十实施例所涉及的半导体发光装置中的发光光谱。Fig. 35 is a graph showing the emission spectrum of the semiconductor light emitting device according to the tenth embodiment of the present invention.

图36是示意的剖面图，表示本发明的第十实施例的第四变形例所涉及的半导体发光装置。36 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modification of the tenth embodiment of the present invention.

图37是示意的剖面图，表示本发明的第十实施例的第五变形例所涉及的半导体发光装置。37 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modified example of the tenth embodiment of the present invention.

图38是示意的剖面图，表示本发明的第十实施例的第六变形例所涉及的半导体发光装置。38 is a schematic cross-sectional view showing a semiconductor light emitting device according to a sixth modification of the tenth embodiment of the present invention.

图39是示意的剖面图，表示本发明的第十一实施例所涉及的半导体发光装置。Fig. 39 is a schematic cross-sectional view showing a semiconductor light emitting device according to an eleventh embodiment of the present invention.

图40是示意的剖面图，表示本发明的第十一实施例的第四变形例所涉及的半导体发光装置。40 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fourth modified example of the eleventh embodiment of the present invention.

图41是示意的剖面图，表示本发明的第十一实施例的第五变形例所涉及的半导体发光装置。41 is a schematic cross-sectional view showing a semiconductor light emitting device according to a fifth modified example of the eleventh embodiment of the present invention.

图42是示意的剖面图，表示本发明的第十二实施例所涉及的半导体发光装置。Fig. 42 is a schematic cross-sectional view showing a semiconductor light emitting device according to a twelfth embodiment of the present invention.

图43是示意的剖面图，表示本发明的第十三实施例所涉及的半导体发光装置。Fig. 43 is a schematic cross-sectional view showing a semiconductor light emitting device according to a thirteenth embodiment of the present invention.

图44是示意的剖面图，表示本发明的第十三实施例的一变形例所涉及的半导体发光装置。Fig. 44 is a schematic cross-sectional view showing a semiconductor light emitting device according to a modified example of the thirteenth embodiment of the present invention.

图45是示意的剖面图，表示现有的半导体发光装置。Fig. 45 is a schematic cross-sectional view showing a conventional semiconductor light emitting device.

符号说明Symbol Description

[0081]10-半导体发光装置；11A-第一引线框；11B-第二引线框；12-LED芯片；13-芯片固定用糊状材料；14A-第一电极；14B-第二电极；15A-第一金属线；15B-第二金属线；16-密封部；16a-基体材料；16b-微粒(第一微粒)；16b1-初级微粒；16b2-复合微粒；16c-荧光材料；16d-密封材料；17b-第二微粒；20-半导体发光装置；25-树脂材料；26-密封部；27-荧光体层；26A-第一密封部；26B-第二密封部；30-半导体发光装置；30A-半导体发光装置；30B-半导体发光装置；30C-半导体发光装置；30D-半导体发光装置；30E-半导体发光装置；30F-半导体发光装置；30G-半导体发光装置；31-衬底；32A-第一布线；32B-第二布线；40-半导体发光装置；40A-半导体发光装置；40B-半导体发光装置；40C-半导体发光装置；40D-半导体发光装置；40E-半导体发光装置；40F-半导体发光装置；41A-第一凸块；41B-第二凸块；50-半导体发光装置；50A-半导体发光装置；50B-半导体发光装置；50C-半导体发光装置；50D-半导体发光装置；50E-半导体发光装置；50F-半导体发光装置；50G-半导体发光装置；50H-半导体发光装置；50I-半导体发光装置；50J-半导体发光装置；50K-半导体发光装置；50L-半导体发光装置；51-壳体部件；51a-凹部；51b-空隙部；52A-第一引线；52B-第二引线；53-副安装部件；54A-第一副安装电极；54B-第一副安装电极；55-糊状材料；60A-半导体发光装置；60B-半导体发光装置；60C-半导体发光装置；60D-半导体发光装置；60E-半导体发光装置；70-(第一)透镜；71-第二透镜；80-半导体发光装置；80A-半导体发光装置；81-反射器；81a-反射部；81b-空隙部。10-semiconductor light emitting device; 11A-first lead frame; 11B-second lead frame; 12-LED chip; 13-chip fixing paste material; 14A-first electrode; 14B-second electrode; 15A - first metal wire; 15B - second metal wire; 16 - sealing part; 16a - matrix material; 16b - microparticle (first microparticle); 16b1 - primary microparticle; 16b2 - composite microparticle; Material; 17b-second particle; 20-semiconductor light emitting device; 25-resin material; 26-sealing part; 27-phosphor layer; 26A-first sealing part; 26B-second sealing part; 30-semiconductor light emitting device; 30A-semiconductor light emitting device; 30B-semiconductor light emitting device; 30C-semiconductor light emitting device; 30D-semiconductor light emitting device; 30E-semiconductor light emitting device; 30F-semiconductor light emitting device; 30G-semiconductor light emitting device; 1 wiring; 32B-second wiring; 40-semiconductor light emitting device; 40A-semiconductor light emitting device; 40B-semiconductor light emitting device; 40C-semiconductor light emitting device; 40D-semiconductor light emitting device; ; 41A-first bump; 41B-second bump; 50-semiconductor light emitting device; 50A-semiconductor light emitting device; 50B-semiconductor light emitting device; 50C-semiconductor light emitting device; ; 50F-semiconductor light emitting device; 50G-semiconductor light emitting device; 50H-semiconductor light emitting device; 50I-semiconductor light emitting device; -recess; 51b-gap; 52A-first lead; 52B-second lead; 53-sub-installation component; 54A-first sub-installation electrode; 60B-semiconductor light-emitting device; 60C-semiconductor light-emitting device; 60D-semiconductor light-emitting device; 60E-semiconductor light-emitting device; 70-(first) lens; 71-second lens; 80-semiconductor light-emitting device; 80A- Semiconductor light emitting device; 81-reflector; 81a-reflecting part; 81b-gap part.

具体实施方式Detailed ways

[0082](第一实施例)(first embodiment)

参照附图，对本发明的第一实施例所涉及的半导体发光装置进行说明。A semiconductor light emitting device according to a first embodiment of the present invention will be described with reference to the drawings.

[0083]图1，示意地表示是本发明的第一实施例所涉及的半导体发光装置的白光LED装置的剖面结构。如图1所示，在第一实施例所涉及的白光LED装置10中，LED芯片12被糊状银材料或糊状绝缘材料等芯片固定用糊状材料13固定着支撑在设置于第一引线框11A的上端部且呈碗状的芯片垫(die pad)部的底面上。1 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a first embodiment of the present invention. As shown in FIG. 1 , in thewhite LED device 10 according to the first embodiment, theLED chip 12 is fixed and supported on the first lead wire by a chip fixingpaste material 13 such as paste silver material or paste insulating material. The upper end portion of theframe 11A and the bottom surface of a bowl-shaped die pad portion.

[0084]用例如由氮化镓化合物半导体构成、放出波长在蓝光区到紫外光区的光的LED芯片作为LED芯片12。[0084] As theLED chip 12, for example, an LED chip made of a gallium nitride compound semiconductor and emitting light having a wavelength in the blue region to the ultraviolet region is used.

[0085]在LED芯片12的上表面上形成有第一电极14A和第二电极14B。第一电极14A通过第一金属线15A与第一引线框11A电连接，第二电极14B通过第二金属线15B与和第一引线框11A配成对的第二引线框11B电连接。[0085] On the upper surface of theLED chip 12, afirst electrode 14A and asecond electrode 14B are formed. Thefirst electrode 14A is electrically connected to thefirst lead frame 11A through thefirst metal wire 15A, and thesecond electrode 14B is electrically connected to thesecond lead frame 11B paired with thefirst lead frame 11A through thesecond metal wire 15B.

[0086]LED芯片12已被成形为炮弹状的密封部16密封，第一引线框11A的芯片垫部和第二引线框11B的上端部位于该密封部16内。[0086] TheLED chip 12 has been sealed by a cannonball-shapedsealing portion 16 in which the chip pad portion of thefirst lead frame 11A and the upper end portion of thesecond lead frame 11B are located.

[0087]密封部16是由包含基体材料16a和微粒16b的复合材料构成的密封材料16d、和荧光材料16c所构成的。所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a内部。[0087] The sealingportion 16 is composed of a sealingmaterial 16d made of a composite material including thebase material 16a and thefine particles 16b, and afluorescent material 16c. Theparticles 16b are made of inorganic materials and have been uniformly dispersed inside thematrix material 16a.

[0088]LED芯片12所放射出的、波长在蓝光区到紫外光区的光(以下，将该光称为放射光)对位于密封部16的放射路径上的荧光材料16c进行激发。通过使该激发光和放射光的颜色混在一起，或者使多种颜色的激发光混在一起，能够从白光LED装置10中得到白光。[0088] The light emitted by theLED chip 12 and having a wavelength in the blue region to the ultraviolet region (hereinafter referred to as emitted light) excites thefluorescent material 16c located on the emission path of the sealingportion 16. White light can be obtained from thewhite LED device 10 by mixing the colors of the excitation light and emitted light, or by mixing excitation lights of a plurality of colors.

[0089]图2，放大而表示密封部16的一部分。如图2所示，由无机材料构成的微粒16b包括初级微粒16b1和该初级微粒16b1凝缩而构成的复合微粒16b2。因此，微粒16b已均匀地分散在基体材料16a中，是指初级微粒16b1和复合微粒16b2基本上均匀地分散着，而不是分散情况根据位置的不同而不同。[0089] FIG. 2 shows a part of the sealingportion 16 enlargedly. As shown in FIG. 2, thefine particles 16b made of an inorganic material include primary fine particles 16b1 and composite fine particles 16b2 formed by condensation of the primary fine particles 16b1. Therefore, themicroparticles 16b have been uniformly dispersed in thebase material 16a, meaning that the primary microparticles 16b1 and the composite microparticles 16b2 are substantially uniformly dispersed, not that the dispersion varies from position to position.

[0090]可以采用由对可见光透明的材料即环氧树脂、丙烯树脂或环烯烃(cycloolefin)树脂等有机高分子材料构成的树脂材料、或者由硅树脂等无机高分子材料构成的树脂材料作为基体材料16a。Can adopt the resin material that is made of organic polymer materials such as epoxy resin, acrylic resin or cycloolefin (cycloolefin) resin to visible light transparent material, or the resin material that is made of inorganic polymer material such as silicone resin asmatrix Material 16a.

[0091]在此，微粒16b的有效粒径被设定在LED芯片12所放射的放射光的波长即基体材料16a中的波长的四分之一以下。[0091] Here, the effective particle size of themicroparticles 16b is set to be equal to or less than a quarter of the wavelength of the radiated light emitted by theLED chip 12, that is, the wavelength in thebase material 16a.

[0092]在假设LED芯片12所放射的放射光在空气中的波长为400nm、并且基体材料16a是环氧树脂的情况下，因为该环氧树脂的折射率约为1.5，所以放射光在基体材料16a中的波长就为267nm。因此，若将微粒16b的有效粒径设定在67nm以下，就能够将该有效粒径设定在基体材料16a内的波长的四分之一以下。[0092] Assuming that the emitted light emitted by theLED chip 12 has a wavelength of 400nm in the air and that thebase material 16a is epoxy resin, since the epoxy resin has a refractive index of about 1.5, the emitted light is in the base body. The wavelength inmaterial 16a is then 267 nm. Therefore, if the effective particle diameter of themicroparticles 16b is set to be 67 nm or less, the effective particle diameter can be set to be 1/4 or less of the wavelength in thebase material 16a.

[0093]补充说明一下，微粒16b的有效粒径不被限定于基体材料16a中的波长的四分之一以下的值，只要将该有效粒径设定在1nm以上且100nm以下，就能够得到本发明的效果。最好是这样的，将微粒16b的有效粒径设定在1nm以上且50nm以下，以对波长在蓝光区到紫外光区的放射光具有更为充分的透明性。It is added that the effective particle diameter of themicroparticle 16b is not limited to a value below 1/4 of the wavelength in thebase material 16a, as long as the effective particle diameter is set at more than 1nm and less than 100nm, it is possible to obtain Effect of the present invention. It is preferable to set the effective particle size of themicroparticles 16b to not less than 1nm and not more than 50nm in order to have more sufficient transparency to radiated light having a wavelength in the blue to ultraviolet region.

[0094]这时，若微粒的粒径小于1nm，就会有出现量子效应的材料发荧光等影响到特性的情况。补充说明一下，能够用电子显微镜等确认添加在基体材料16a中的微粒16b的粒径和有效粒径。[0094] At this time, if the particle size of the particles is less than 1 nm, there may be cases where the properties of the material are affected by the fluorescence of the quantum effect material. In addition, the particle size and effective particle size of thefine particles 16b added to thebase material 16a can be confirmed with an electron microscope or the like.

[0095]初级微粒16b1的粒径最好在1nm以上且100nm以下，更好的是将实质上的有效粒径设在1nm以上且50nm以下。补充说明一下，除了用粒度分布仪在溶液中进行的粒径测定以外，还能够通过利用粉末状态下的气体吸附法的粒径测定或用电子显微镜观测的粒径测定来求出初级微粒16b1的有效粒径值。[0095] The primary particle 16b1 preferably has a particle diameter of not less than 1 nm and not more than 100 nm, and more preferably has a substantially effective particle diameter of not less than 1 nm and not more than 50 nm. In addition, in addition to the particle size measurement performed in the solution with a particle size distribution meter, the particle size measurement of the primary particle 16b1 can also be obtained by the particle size measurement of the gas adsorption method in the powder state or the particle size measurement of the electron microscope observation. effective particle size.

[0096]比上述情况更好的是，初级微粒16b1的平均粒径在1nm以上且10nm以下，而且大部分所述初级微粒16b1不凝集而处于均匀地分散的状态。因为瑞利散射在该状态下进一步减低，复合材料具有充分的透明性，所以该状态很合适。能够通过用透射电子显微镜观察复合材料，来确认所述初级粒子16b1是否均匀地分散着。[0096] More preferably than the above case, the average particle diameter of the primary particles 16b1 is not less than 1nm and not more than 10nm, and most of the primary particles 16b1 are in a uniformly dispersed state without agglomeration. This state is suitable because Rayleigh scattering is further reduced in this state and the composite material has sufficient transparency. Whether or not the primary particles 16b1 are uniformly dispersed can be confirmed by observing the composite material with a transmission electron microscope.

[0097]在此，用图3对有效粒径进行说明。在图3中，横轴表示微粒16b的粒径；左侧的纵轴表示微粒16b与横轴的粒径对应的频率；右侧的纵轴表示粒径的累计频率。有效粒径，指的是在微粒16b的整体中，以该微粒16b的粒度频率分布上的累计频率为50％的粒径作为中心粒径(中间(median)直径：d50)，位于以该中心粒径为中心的、累计频率为50％的范围A内的粒径范围B。初级微粒16b1的有效粒径也表示同样的范围。若要以高精度求出有效粒径值，例如以200个以上的微粒16b或初级微粒16b1为对象就可以。[0097] Here, the effective particle diameter will be described with reference to FIG. 3 . In FIG. 3 , the horizontal axis represents the particle diameter of theparticles 16b; the left vertical axis represents the frequency of theparticles 16b corresponding to the particle diameter of the horizontal axis; the right vertical axis represents the cumulative frequency of the particle diameters. The effective particle size refers to the particle size at which the cumulative frequency of the particle size frequency distribution of theparticle 16b is 50% in the entirety of theparticle 16b as the center particle size (median diameter: d50), located at the center Particle size range B within range A with a particle size as the center and a cumulative frequency of 50%. The effective particle size of the primary fine particles 16b1 also shows the same range. To obtain the effective particle diameter value with high precision, for example, more than 200particles 16b or primary particles 16b1 may be used as objects.

[0098]只要采用例如从无机氧化物、金属氮化物、金属碳化物、碳化合物及硫化物这些分类中选出的至少一种无机材料作为微粒16b就可以。[0098] As long as at least one inorganic material selected from the classification of inorganic oxides, metal nitrides, metal carbides, carbon compounds, and sulfides is used as thefine particles 16b, it is sufficient.

[0099]可以用氧化钛(折射率在2.2到2.5)、氧化钽(折射率在2.0到2.3)、氧化铌(折射率在2.1到2.3)、氧化钨(折射率为2.2)、氧化锆(折射率为2.1)、氧化锌(折射率在1.9到2.0)、氧化铟(折射率为2.0)、氧化锡(折射率为2.0)、氧化铪(折射率为2.0)、氧化钇(折射率为1.9)、氧化硅(折射率在1.4到1.5)、或氧化铝(折射率在1.7到1.8)等作为无机氧化物。此外，也可以采用所述氧化物所构成的复合无机氧化物。作为金属氮化物，可以举出氮化硅(折射率在1.9到2.0)等等。作为金属碳化物，可以举出碳化硅(折射率为2.6)等等。作为碳化合物，虽然是单质的，但可以举出钻石(折射率为3.0)或类钻碳(diamond-like carbon)(折射率为3.0)等具有透光性的无机材料。作为硫化物，可以举出硫化铜、硫化锡等等。补充说明一下，和各个无机材料名称一起写下的折射率，表示根据LED芯片12所放射的放射光即波长在蓝光区到紫外光区的放射光决定的折射率。Titanium oxide (refractive index 2.2 to 2.5), tantalum oxide (refractive index 2.0 to 2.3), niobium oxide (refractive index 2.1 to 2.3), tungsten oxide (refractive index 2.2), zirconium oxide ( Refractive index 2.1), zinc oxide (refractive index 1.9 to 2.0), indium oxide (refractive index 2.0), tin oxide (refractive index 2.0), hafnium oxide (refractive index 2.0), yttrium oxide (refractive index 1.9), silicon oxide (with a refractive index of 1.4 to 1.5), or aluminum oxide (with a refractive index of 1.7 to 1.8), etc. as the inorganic oxide. In addition, composite inorganic oxides composed of the above oxides can also be used. As the metal nitride, silicon nitride (with a refractive index of 1.9 to 2.0) and the like can be cited. Examples of metal carbides include silicon carbide (refractive index: 2.6) and the like. The carbon compound is simple, but light-transmitting inorganic materials such as diamond (refractive index: 3.0) and diamond-like carbon (refractive index: 3.0) can be mentioned. Examples of the sulfide include copper sulfide, tin sulfide, and the like. In addition, the refractive index written together with the name of each inorganic material represents the refractive index determined by the radiated light emitted by theLED chip 12 , that is, the radiated light having a wavelength in the blue region to the ultraviolet region.

[0100]此外，可以采用以从由所述氧化钛、氧化钽、氧化锆及氧化锌构成的分类中选出的至少一种氧化物为主要成分的无机粒子作为用作微粒16b的、用来使密封材料16d的折射率增高的无机化合物。所述无机粒子具有销售品的种类很多，很好采购这一好处。In addition, inorganic particles mainly composed of at least one oxide selected from the classification consisting of titanium oxide, tantalum oxide, zirconium oxide, and zinc oxide can be used asparticles 16b for An inorganic compound that increases the refractive index of the sealingmaterial 16d. The above-mentioned inorganic particles have the advantage of being easy to purchase because there are many kinds of products for sale.

[0101]在此，应该注意下述事项，就是说在采用如氧化钛那样由于紫外光的作用而容易起到光催化剂作用的无机化合物的情况下，需要不采用具有起到很强的光催化剂作用的锐钛矿结晶结构的化合物而采用具有金红石结晶结构的化合物，或者需要采用非晶质材料、或由氧化硅(SiO₂)或氧化铝(铝氧化物：Al₂O₃)等不起到光催化剂作用的无机化合物覆盖微粒表面而成的材料。Here, should pay attention to following matters, that is to say, under the situation of adopting the inorganic compound that easily plays photocatalyst effect because of the effect of ultraviolet light like titanium oxide, need not adopt to have very strong photocatalyst effect. Compounds with anatase crystal structure should be used instead of compounds with rutile crystal structure, or amorphous materials should be used, or silicon oxide (SiO₂ ) or aluminum oxide (aluminum oxide: Al₂ O₃ ) should not be used. A material made by covering the surface of fine particles with an inorganic compound that acts as a photocatalyst.

[0102]微粒16b在由复合材料构成的密封材料16d中的体积百分比，最好在5％以上且60％以下。若微粒16b的体积百分比太高，密封材料16d的透明性就很弱。相反，若微粒16b的体积百分比太低，通过微粒16b的添加得到的效果就很小。[0102] The volume percentage of thefine particles 16b in the sealingmaterial 16d made of the composite material is preferably not less than 5% and not more than 60%. If the volume percentage of theparticles 16b is too high, the transparency of the sealingmaterial 16d will be weak. On the contrary, if the volume percentage of thefine particles 16b is too low, the effect obtained by the addition of thefine particles 16b will be small.

[0103]图4表示例如在采用折射率分别为1.4、1.5及1.6的材料作为基体材料16a的材料，并采用氧化钛(TiO₂)(折射率为2.4)作为微粒16b的材料的情况下，计算出与微粒16b在由复合材料构成的密封材料16d中所占的比例的变化相对应的、该复合材料的折射率n_c变化情况而得到的结果。利用下述算式(1)(麦克斯维尔-加内特(Maxwell-Garnett)理论)进行了计算。补充说明一下，复合材料的折射率，指将复合材料看作具有一个折射率的介质时的有效折射率。Fig. 4 shows, for example, adopting the material that refractive index is respectively 1.4, 1.5 and 1.6 as the material ofbase material 16a, and adopts titanium oxide (TiO₂ ) (refractive index 2.4) under the situation of the material asparticle 16b, The result of calculating the change in the refractive index_nc of the composite material corresponding to the change in the ratio of themicroparticles 16b in the sealingmaterial 16d made of the composite material. Calculations were performed using the following formula (1) (Maxwell-Garnett theory). As an additional note, the refractive index of the composite material refers to the effective refractive index when the composite material is regarded as a medium with one refractive index.

[0104][0104]

n_c²＝n₂²×[n₁²+2n₂²+2P₁(n₁²-n₂²)]/[n₁²+2n₂²-P₁(n₁²-n₂²)]……(1)n_c² ＝n₂² ×[n₁² +2n₂² +2P₁ (n₁² -n₂² )]/[n₁² +2n₂² -P₁ (n₁² -n₂² ) ]……(1)

在此，n_c是复合材料的折射率；n₁是微粒16b的折射率；n₂是基体材料16a的折射率；P₁是微粒16b在复合材料中所占的比例(体积百分比)。Here, n_c is the refractive index of the composite material; n₁ is the refractive index of theparticle 16b; n₂ is the refractive index of thematrix material 16a; P₁ is the proportion (volume percentage) of theparticle 16b in the composite material.

[0105]由图4可以看出，若要让复合材料的折射率在1.8以上，就在基体材料16a的折射率为1.4、1.5及1.6的情况下将微粒16b在复合材料中的体积百分比分别设为46％、37％及28％就可以。在此，因为一般性光学树脂的折射率值在1.4到1.7的范围内，所以在仅使用光学树脂的情况下很难实现超过1.7的、在1.8以上的折射率值。因此，最好将微粒16b在复合材料中的体积百分比设为5％以上且60％以下，虽然有效的范围根据用作基体材料16a的材料的特性和微粒16b的材料的特性的不同而不同。更好的是，将该体积百分比设为10％以上且50％以下。再说，在将折射率范围在1.4到1.55的、通用的光学树脂用作基体材料16a的情况下，更好的是将该体积百分比设为20％以上且40％以下。As can be seen from Figure 4, if the refractive index of the composite material is to be more than 1.8, the volume percentages of themicroparticles 16b in the composite material are respectively adjusted under the conditions of 1.4, 1.5 and 1.6 of the refractive index of thematrix material 16a. Just set it to 46%, 37% and 28%. Here, since the refractive index value of general optical resins is in the range of 1.4 to 1.7, it is difficult to achieve a refractive index value of 1.8 or higher exceeding 1.7 when only optical resins are used. Therefore, it is preferable to set the volume percentage ofmicroparticles 16b in the composite material to be 5% or more and 60% or less, although the effective range varies depending on the properties of the material used asmatrix material 16a and the material ofmicroparticles 16b. More preferably, this volume percentage is 10% or more and 50% or less. Incidentally, in the case of using a general-purpose optical resin having a refractive index ranging from 1.4 to 1.55 as thebase material 16a, it is more preferable to set the volume percentage to 20% or more and 40% or less.

[0106]在LED芯片12输出蓝色放射光的情况下，采用能够得到黄光的YAG:Ce等荧光材料作为荧光材料16c的材料就可以。在该LED芯片12输出紫光区到紫外光区的放射光的情况下，采用多种荧光材料作为荧光材料16c。具体而言，可以采用Y₂O₂S:Eu作为红光用荧光材料；可以采用ZnS:Cu，Al或(Ba，Mg)Al₁₀O₁₇:Eu，Mn作为绿光用荧光材料；可以采用(Sr，Ca，Ba，Mg)₁₀(PO₄)₆C₁₂:Eu或(Ba，Mg)Al₁₀O₁₇:Eu作为蓝光用荧光材料。[0106] When theLED chip 12 outputs blue radiated light, it is sufficient to use a fluorescent material such as YAG:Ce that can obtain yellow light as the material of thefluorescent material 16c. In the case where theLED chip 12 outputs radiated light in the violet region to the ultraviolet region, a plurality of fluorescent materials are used as thefluorescent material 16c. Specifically, Y₂ O₂ S:Eu can be used as a fluorescent material for red light; ZnS:Cu, Al or (Ba, Mg)Al₁₀ O₁₇ :Eu, Mn can be used as a fluorescent material for green light; (Sr, Ca, Ba, Mg)₁₀ (PO₄ )₆ C₁₂ :Eu or (Ba, Mg)Al₁₀ O₁₇ :Eu as a fluorescent material for blue light.

[0107]根据第一实施例所涉及的半导体发光装置，因为以均匀地分散的方式将由无机材料构成的微粒16b添加在构成密封部16的密封材料16d中，所以与未添加微粒16b的情况相比密封部16的耐光性和耐热性提高。因为分散着的微粒16b的有效粒径被设定在LED芯片12(半导体芯片)所放射的放射光的波长的四分之一以下，所以不会对密封部16的透明性造成不良影响。因此，不会损害光提取效率。[0107] According to the semiconductor light-emitting device according to the first embodiment, since theparticles 16b made of inorganic materials are added to the sealingmaterial 16d constituting the sealingportion 16 in a uniformly dispersed manner, it is different from the case where theparticles 16b are not added. The light resistance and heat resistance of the sealingportion 16 are improved. Since the effective particle size of the dispersedparticles 16b is set to be equal to or less than 1/4 of the wavelength of light emitted from the LED chip 12 (semiconductor chip), the transparency of the sealingportion 16 is not adversely affected. Therefore, light extraction efficiency is not impaired.

[0108]而且，与未添加微粒16b的情况相比密封部16与LED芯片12之间的热膨胀系数差更小。因此，密封部16不易从LED芯片12上剥离开，在密封部16(密封材料16d)中不易产生裂缝。[0108] Furthermore, the difference in thermal expansion coefficient between the sealingportion 16 and theLED chip 12 is smaller than that in the case where thefine particles 16b are not added. Therefore, the sealingportion 16 is less likely to be peeled off from theLED chip 12, and cracks are less likely to occur in the sealing portion 16 (sealingmaterial 16d).

[0109]此外，因为与未添加微粒16b的情况相比密封部16的根据放射光决定的折射率更高，所以光提取效率进一步提高。[0109] In addition, since the sealingportion 16 has a higher refractive index determined by radiated light than the case where themicroparticles 16b are not added, the light extraction efficiency is further improved.

[0110]补充说明一下，若采用能够吸收紫外光区的光的氧化锌(ZnO)、氧化钛(TiO₂)或氧化铈(CeO₂)作为添加在密封部16中的微粒16b，就能够在密封材料16d的基体材料16a由环氧树脂等有机高分子材料构成的情况下抑制由于紫外光的影响而造成的变色。[0110] It should be added that if zinc oxide (ZnO), titanium oxide (TiO₂ ) or cerium oxide (CeO₂ ) capable of absorbing light in the ultraviolet region are used as theparticles 16b added in the sealingportion 16, the When thebase material 16a of the sealingmaterial 16d is made of an organic polymer material such as epoxy resin, discoloration due to the influence of ultraviolet light is suppressed.

[0111]再说，若芯片固定用糊状材料13具有透明性，因为该芯片固定用糊状材料13不吸收LED芯片12所放射的放射光，所以光提取效率就提高。补充说明一下，能例如通过下述做法得到具有透明性的芯片固定用糊状材料13，该做法是：进行用催化剂让以环氧树脂或硅树脂为主要成分的透明糊状材料、低熔点玻璃材料或具有硅一氧键(siloxane bond)的化合物进行反应的第一工序，以及对该第一工序中的反应物质进行水解及脱水缩合反应的第二工序，然后对通过让该第二工序的生成物干燥来得到的低温硬化玻璃材料添加吸收紫外光的微粒16b，来使该低温硬化玻璃材料成为复合材料。[0111] Furthermore, if thepaste material 13 for chip fixing has transparency, since thepaste material 13 for chip fixing does not absorb the radiated light emitted by theLED chip 12, the light extraction efficiency is improved. In addition, the transparent chip fixingpaste material 13 can be obtained, for example, by making a transparent paste material mainly composed of epoxy resin or silicone resin, low-melting point glass, etc. with a catalyst. A first process of reacting a material or a compound having a silicon-oxygen bond (siloxane bond), and a second process of hydrolyzing and dehydrating condensation reaction of the reaction substance in the first process, and then by allowing the second process The low-temperature hardening glass material obtained by drying the product is added with ultraviolet-absorbingfine particles 16b, and the low temperature hardening glass material becomes a composite material.

[0112]通过对芯片固定用糊状材料13添加微粒16b，该芯片固定用糊状材料13的放热性提高，微粒16b吸收紫外光，因而芯片固定用糊状材料13的耐光性(耐紫外光性)也提高。By addingmicroparticle 16b to chip fixingpaste material 13, the exothermic property of this chip fixingpaste material 13 improves, andmicroparticle 16b absorbs ultraviolet light, thus the photostability (ultraviolet resistance) of chip fixingpaste material 13 Lightness) is also improved.

[0113](第二实施例)(second embodiment)

下面，参照附图，对本发明的第二实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a second embodiment of the present invention will be described with reference to the drawings.

[0114]图5，示意地表示为本发明的第二实施例所涉及的半导体发光装置的白光LED装置的剖面结构。补充说明一下，用相同的符号表示与图1所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0114] FIG. 5 schematically shows a cross-sectional structure of a white LED device as a semiconductor light emitting device according to a second embodiment of the present invention. As a supplementary note, the same symbols are used to designate the same structural elements as those shown in FIG. 1, and descriptions of these structural elements are omitted.

[0115]如图5所示，在第二实施例所涉及的半导体发光装置20中，密封部26由第一密封部26A和第二密封部26B构成，该第一密封部26A直接覆盖被支撑在第一引线框11A的芯片垫部上的LED芯片12；该第二密封部26B以炮弹状覆盖包括该第一密封部26A在内的第一引线框11A及第二引线框11B的各个上端部分。[0115] As shown in FIG. 5, in the semiconductorlight emitting device 20 according to the second embodiment, the sealingportion 26 is composed of afirst sealing portion 26A and asecond sealing portion 26B, and thefirst sealing portion 26A directly covers the supported TheLED chip 12 on the chip pad portion of thefirst lead frame 11A; thesecond sealing portion 26B covers the upper ends of thefirst lead frame 11A and thesecond lead frame 11B including thefirst sealing portion 26A in a cannonball shape part.

[0116]第一密封部26A由密封材料16d构成，该密封材料16d由包含第一实施例所涉及的微粒16b的复合材料构成；第二密封部26B由混合有荧光材料16c的树脂材料25构成。只要用与第一实施例所涉及的基体材料16a一样的材料作为树脂材料25的材料就可以。[0116] Thefirst sealing portion 26A is made of a sealingmaterial 16d made of a composite material including theparticles 16b according to the first embodiment; thesecond sealing portion 26B is made of aresin material 25 mixed with afluorescent material 16c. . What is necessary is just to use the same material as thebase material 16a concerning 1st Example as the material of theresin material 25.

[0117]根据第二实施例所涉及的半导体发光装置20，通过在离LED芯片12较近、光密度较高的部分设置由复合材料所构成的密封材料16d构成的第一密封部26A，能够实现从LED芯片12提取的、很高的光提取效率，能够得到很高的耐光性和耐热性，与第一实施例一样。[0117] According to the semiconductor light-emittingdevice 20 according to the second embodiment, by providing thefirst sealing portion 26A made of the sealingmaterial 16d made of a composite material at a portion close to theLED chip 12 and having a high optical density, it is possible to Realizing high light extraction efficiency from theLED chip 12, high light resistance and heat resistance can be obtained, as in the first embodiment.

[0118]另一方面，通过在离LED芯片12较远、光密度较低的部分设置由透明性比密封材料16d的透明性高的树脂材料25构成的第二密封部26B，并使该第二密封部26B覆盖第一密封部26A，能够提高第二密封部26B中的透光性。其结果是，能使从半导体发光装置20提取的光提取效率提高。[0118] On the other hand, by providing asecond sealing portion 26B made of aresin material 25 having a transparency higher than that of the sealingmaterial 16d at a portion farther from theLED chip 12 and having a lower optical density, and making thesecond sealing portion 26B Thesecond sealing portion 26B covers thefirst sealing portion 26A, so that the light transmittance in thesecond sealing portion 26B can be improved. As a result, the light extraction efficiency from the semiconductorlight emitting device 20 can be improved.

[0119]补充说明一下，在LED芯片12的放射光的波长长于蓝光区的波长的情况下，若将能够吸收紫外光的氧化锌、氧化钛或氧化铈用作添加在第一密封部26A中的微粒16b，就能够抑制构成第一密封部26A的基体材料16a由于紫外光的影响而造成的恶化。其结果是，能够用例如环氧树脂等虽然透明性优良，但容易受到紫外光的影响变成黄色的树脂作为基体材料16a。[0119] It should be added that when the wavelength of the emitted light from theLED chip 12 is longer than the wavelength in the blue light region, if zinc oxide, titanium oxide or cerium oxide capable of absorbing ultraviolet light is used as the Thefine particles 16b can suppress deterioration of thebase material 16a constituting thefirst sealing portion 26A due to the influence of ultraviolet light. As a result, for example, resin such as epoxy resin, which is excellent in transparency but easily turns yellow under the influence of ultraviolet light, can be used as thebase material 16a.

[0120](第三实施例)(third embodiment)

下面，参照附图，对本发明的第三实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a third embodiment of the present invention will be described with reference to the drawings.

[0121]图6，示意地表示为本发明的第三实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0121] FIG. 6 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a third embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 1 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0122]如图6所示，在第三实施例所涉及的半导体发光装置30中，LED芯片12安装在印刷布线衬底上，该印刷布线衬底包括衬底31，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0122] As shown in FIG. 6, in the semiconductorlight emitting device 30 related to the third embodiment, theLED chip 12 is mounted on a printed wiring substrate including asubstrate 31, and at least optionally Thefirst wiring 32A and thesecond wiring 32B are formed on the main surface and the back surface of thesubstrate 31 .

[0123]具体而言，LED芯片12通过芯片固定用糊状材料13固定在第一布线32A上。在形成于LED芯片12的上表面上的第一电极14A和第二电极14B中，第一电极14A通过第一金属线15A与第一布线32A电连接，第二电极14B通过第二金属线15B与第二布线32B电连接。[0123] Specifically, theLED chip 12 is fixed on thefirst wiring 32A by thepaste material 13 for chip fixing. Among thefirst electrode 14A and thesecond electrode 14B formed on the upper surface of theLED chip 12, thefirst electrode 14A is electrically connected to thefirst wiring 32A through thefirst metal wire 15A, and thesecond electrode 14B is electrically connected to thefirst wiring 32A through thesecond metal wire 15B. It is electrically connected to thesecond wiring 32B.

[0124]密封部16，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。用与构成第一实施例的密封部16的材料一样的材料作为构成密封部16的材料就可以。The sealingportion 16 is made of a sealingmaterial 16d made of a composite material comprising thematrix material 16a andparticles 16b, and afluorescent material 16c. Theparticles 16b are made of inorganic materials and uniformly dispersed in thematrix material 16a. internal. As the material constituting the sealingportion 16, the same material as that constituting the sealingportion 16 of the first embodiment may be used.

[0125]分别与第一布线32A及第二布线32B电连接的LED芯片12，在印刷布线衬底上被密封部16密封该LED芯片12的周围。[0125] TheLED chip 12 electrically connected to thefirst wiring 32A and thesecond wiring 32B, respectively, is sealed around theLED chip 12 by the sealingportion 16 on the printed wiring board.

[0126]补充说明一下，例如通过利用镀金属法将由铜(Cu)薄膜构成的布线形成在衬底31上，然后利用镀金属法将镍(Ni)膜和金(Au)膜依次形成在所述已形成的布线上，能够形成第一布线32A和第二布线32B。[0126] It should be added that, for example, a wiring consisting of a copper (Cu) thin film is formed on thesubstrate 31 by a metal plating method, and then a nickel (Ni) film and a gold (Au) film are sequentially formed on thesubstrate 31 by a metal plating method. On the previously formed wirings, thefirst wiring 32A and thesecond wiring 32B can be formed.

[0127]这样，通过在将LED芯片12安装在印刷布线衬底上后，用将包含基体材料16a及微粒16b的复合材料和荧光材料16c混合起来而成的材料进行传递模塑，来实现第三实施例所涉及的半导体发光装置30。[0127] In this way, after theLED chip 12 is mounted on the printed wiring substrate, transfer molding is performed with a material obtained by mixing the composite material including thebase material 16a and themicroparticles 16b and thefluorescent material 16c to realize thesecond LED chip 12. The semiconductorlight emitting device 30 related to the third embodiment.

[0128]这样，就能够与第一实施例所涉及的半导体发光装置10一样，在第三实施例所涉及的半导体发光装置30中，也能够得到提高密封部16的耐光性和耐热性，并使光提取效率提高的效果。In this way, like the semiconductorlight emitting device 10 according to the first embodiment, in the semiconductorlight emitting device 30 according to the third embodiment, the light resistance and heat resistance of the sealingportion 16 can also be improved, And the effect of improving the light extraction efficiency.

[0129](第四实施例)(Fourth embodiment)

下面，参照附图，对本发明的第四实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a fourth embodiment of the present invention will be described with reference to the drawings.

[0130]图7，示意地表示为本发明的第四实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0130] FIG. 7 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fourth embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 1 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0131]如图7所示，在第四实施例所涉及的半导体发光装置40中，LED芯片12利用使LED芯片12的上表面与衬底31的主面相向的、所谓的倒装芯片安装(朝下安装)法安装在印刷布线衬底上，该印刷布线衬底包括衬底31，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0131] As shown in FIG. 7, in the semiconductorlight emitting device 40 according to the fourth embodiment, theLED chip 12 is mounted by so-called flip-chip mounting in which the upper surface of theLED chip 12 faces the main surface of thesubstrate 31. Mounted on a printed wiring substrate by (face-down mounting) method, the printed wiring substrate includes asubstrate 31, and at least includesfirst wiring 32A and second wiring selectively formed on the main surface and the back surface of thesubstrate 31. 32B.

[0132]具体而言，在形成于LED芯片12上、分别与衬底31相向的第一电极14A和第二电极14B中，第一电极14A通过第一凸块41A与第一布线32A电连接，第二电极14B通过第二凸块41B与第二布线32B电连接。[0132] Specifically, in thefirst electrode 14A and thesecond electrode 14B formed on theLED chip 12 and respectively facing thesubstrate 31, thefirst electrode 14A is electrically connected to thefirst wiring 32A through thefirst bump 41A. , thesecond electrode 14B is electrically connected to thesecond wiring 32B through thesecond bump 41B.

[0133]分别与第一布线32A及第二布线32B电连接的LED芯片12，在印刷布线衬底上被密封部16密封该LED芯片12的周围。[0133] TheLED chip 12 electrically connected to thefirst wiring 32A and thesecond wiring 32B is sealed around theLED chip 12 by the sealingportion 16 on the printed wiring board.

[0134]密封部16，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。用与构成第一实施例的密封部16的材料一样的材料作为构成密封部16的材料就可以。The sealingportion 16 is made of a sealingmaterial 16d made of a composite material comprising amatrix material 16a and aparticle 16b, and afluorescent material 16c. Theparticle 16b is made of an inorganic material and has been uniformly dispersed in thematrix material 16a. internal. As the material constituting the sealingportion 16, the same material as that constituting the sealingportion 16 of the first embodiment may be used.

[0135]补充说明一下，例如可以采用金(Au)作为构成第一凸块41A和第二凸块41B的材料。[0135] It should be added that, for example, gold (Au) may be used as a material constituting thefirst bump 41A and thesecond bump 41B.

[0136]这样，通过在利用倒装芯片安装法将LED芯片12安装在印刷布线衬底上后，用将包含基体材料16a及微粒16b的复合材料和荧光材料16c混合起来而成的材料进行传递模塑，来实现第四实施例所涉及的半导体发光装置40。[0136] In this way, after theLED chip 12 is mounted on the printed wiring substrate by the flip-chip mounting method, the composite material including thebase material 16a and thefine particles 16b and thefluorescent material 16c are mixed to transfer theLED chip 12. molding to realize the semiconductorlight emitting device 40 according to the fourth embodiment.

[0137]因此，能够与第一实施例及第三实施例所涉及的半导体发光装置10、30一样，在第四实施例所涉及的半导体发光装置40中，也能够得到提高密封部16的耐光性和耐热性，并使光提取效率提高的效果。[0137] Therefore, similar to the semiconductorlight emitting devices 10 and 30 according to the first and third embodiments, the light resistance of the sealingportion 16 can also be improved in the semiconductorlight emitting device 40 according to the fourth embodiment. and heat resistance, and has the effect of improving light extraction efficiency.

[0138]此外，因为在第四实施例所涉及的半导体发光装置40中，不是用金属线，而是用凸块将LED芯片12和印刷布线衬底电连接起来，所以和第三实施例所涉及的半导体发光装置30比较起来，能够实现薄型化。[0138] In addition, in the semiconductorlight emitting device 40 according to the fourth embodiment, theLED chip 12 and the printed wiring substrate are electrically connected by bumps instead of metal wires, so it is different from that of the third embodiment. The semiconductorlight emitting device 30 can be thinned in comparison.

[0139](第五实施例)(fifth embodiment)

下面，参照附图，对本发明的第五实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a fifth embodiment of the present invention will be described with reference to the drawings.

[0140]图8，示意地表示为本发明的第五实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0140] FIG. 8 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fifth embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 1 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0141]如图8所示，在第五实施例所涉及的半导体发光装置50中，LED芯片12固定在具有凹部51a的壳体部件51中的凹部51a底面上。壳体部件51，例如由液晶聚合物等耐热性树脂材料构成，至少有第一引线52A及第二引线52B插入着形成在该壳体部件51中。若考虑到对可见光进行的反射，就最好用白色耐热性树脂材料作为该壳体部件51。[0141] As shown in FIG. 8, in the semiconductorlight emitting device 50 according to the fifth embodiment, theLED chip 12 is fixed on the bottom surface of therecess 51a in thecase member 51 having therecess 51a. Thecase member 51 is made of, for example, a heat-resistant resin material such as liquid crystal polymer, and at least thefirst lead 52A and thesecond lead 52B are inserted into thecase member 51 . In consideration of reflection of visible light, it is preferable to use a white heat-resistant resin material for thehousing member 51 .

[0142]第一引线52A和第二引线52B在壳体部件51的凹部51a的底面上露出，LED芯片12通过芯片固定用糊状材料13固定在第一引线52A露出的区域上。[0142] Thefirst lead 52A and thesecond lead 52B are exposed on the bottom surface of therecess 51a of thecase member 51, and theLED chip 12 is fixed on the exposed area of thefirst lead 52A by thepaste material 13 for chip fixing.

[0143]在形成于LED芯片12的上表面上的第一电极14A和第二电极14B中，第一电极14A通过第一金属线15A与第一引线52A电连接，第二电极14B通过第二金属线15B与第二引线52B电连接。[0143] Among thefirst electrode 14A and thesecond electrode 14B formed on the upper surface of theLED chip 12, thefirst electrode 14A is electrically connected to thefirst lead 52A through thefirst metal wire 15A, and thesecond electrode 14B is electrically connected to thefirst lead 52A through the second Themetal wire 15B is electrically connected to thesecond lead 52B.

[0144]在第五实施例中，通过使密封部16填充于壳体部件51的凹部51a中，来密封固定在壳体部件51的凹部51a底面上的LED芯片12。[0144] In the fifth embodiment, by filling the sealingportion 16 in therecess 51a of thecase member 51, theLED chip 12 fixed on the bottom surface of therecess 51a of thecase member 51 is sealed.

[0145]密封部16，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。用与构成第一实施例的密封部16的材料一样的材料作为构成密封部16的材料就可以。The sealingportion 16 is made of a sealingmaterial 16d made of a composite material comprising thematrix material 16a and themicroparticle 16b, and afluorescent material 16c. Themicroparticle 16b is made of an inorganic material and has been uniformly dispersed in thematrix material 16a. internal. As the material constituting the sealingportion 16, the same material as that constituting the sealingportion 16 of the first embodiment may be used.

[0146]补充说明一下，在此，将第一引线52A及第二引线52B中位于外壳材料51的外部的部分的端子形状设为所谓的鸥翼(Gull Wing：GW)形。不过，各条引线52A、52B的外侧形状并不被限于鸥翼形，也可以将该部分成形为J字形状。[0146] As a supplementary note, here, the terminal shape of the portion of thefirst lead 52A and thesecond lead 52B located outside thecase material 51 is a so-called gull wing (GW) shape. However, the outer shape of each lead 52A, 52B is not limited to the gull-wing shape, and the part may be formed in a J-shape.

[0147]这样，与第一、第三及第四实施例所涉及的半导体发光装置10、30、40一样，在第五实施例所涉及的半导体发光装置50中也能够得到提高密封部16的耐光性和耐热性，并使光提取效率提高的效果。[0147] In this way, like the semiconductorlight emitting devices 10, 30, and 40 according to the first, third, and fourth embodiments, the sealingportion 16 can also be improved in the semiconductorlight emitting device 50 according to the fifth embodiment. Light resistance and heat resistance, and the effect of improving light extraction efficiency.

[0148]此外，也可以设为下述结构来代替第三、第四及第五实施例的各个实施例所涉及的密封部16的结构，该代替的结构是：如第二实施例所涉及的第一密封部26A和第二密封部26B那样，用包含由无机材料构成的微粒16b的密封材料16d直接覆盖LED芯片12，再用包含荧光材料16c的基体材料16a覆盖该密封材料16d。[0148] In addition, the following structure may be used to replace the structure of the sealingportion 16 involved in each of the third, fourth, and fifth embodiments. The alternative structure is as follows: Like thefirst sealing portion 26A and thesecond sealing portion 26B, theLED chip 12 is directly covered with a sealingmaterial16d containing particles 16b made of an inorganic material, and the sealingmaterial 16d is covered with abase material 16a containing afluorescent material 16c.

[0149]此外，也可以是这样的，在第一到第五实施例的各个实施例中，在复合材料与半导体芯片之间的至少一部分区域设置规定的空隙。[0149] Furthermore, in each of the first to fifth embodiments, a predetermined gap may be provided in at least a part of the region between the composite material and the semiconductor chip.

[0150]图9(a)，表示为每种构成第五实施例所涉及的半导体发光装置50中的LED芯片12的衬底的材料通过模拟试验求出的、密封部16的折射率与出射光的总光通量的变化率之间的关系；图9(b)，表示通过同样的模拟试验求出的、密封部16的折射率与总光通量之间的关系。在此，[图表1]表示在模拟试验中使用的衬底材料。[图表1]所示的各种衬底材料的折射率，是各种基体材料在可见光区的代表性数值。FIG. 9(a) shows the relationship between the refractive index of the sealingportion 16 and the output of each material constituting the substrate of theLED chip 12 in the semiconductorlight emitting device 50 according to the fifth embodiment obtained through a simulation test. The relationship between the rate of change of the total luminous flux of incident light; FIG. 9(b) shows the relationship between the refractive index of the sealingportion 16 and the total luminous flux obtained through the same simulation test. Here, [Graph 1] shows the substrate materials used in the simulation test. The refractive indices of various substrate materials shown in [Graph 1] are representative values of various substrate materials in the visible light region.

[0151][图表1][Graph 1]

    衬底材料Substrate material   折射率Refractive index    GaNZnSeSiC蓝宝石GaPInGaAlPGaAsZnOGaNZnSeSiC sapphire GaPInGaAlPGaAsZnO    2.52.52.61.73.33.453.662.152.52.52.61.73.33.453.662.15

[0152]由图9(a)及图9(b)可见，密封部16的折射率最好在1.2以上且2.5以下。在将折射率大于2.0的氧化锌(ZnO)、氮化镓(GaN)或碳化硅(SiC)等用作衬底材料的情况下，密封部16的折射率最好在1.4以上且2.2以下，更好的是该折射率在1.6以上且2.0以下。[0152] As can be seen from FIG. 9(a) and FIG. 9(b), the refractive index of the sealingportion 16 is preferably not less than 1.2 and not more than 2.5. When zinc oxide (ZnO), gallium nitride (GaN), or silicon carbide (SiC) with a refractive index greater than 2.0 is used as the substrate material, the refractive index of the sealingportion 16 is preferably not less than 1.4 and not more than 2.2, More preferably, the refractive index is not less than 1.6 and not more than 2.0.

[0153](第六实施例)(sixth embodiment)

下面，参照附图，对本发明的第六实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a sixth embodiment of the present invention will be described with reference to the drawings.

[0154]图10，示意地表示为本发明的第六实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1及图6所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0154] FIG. 10 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a sixth embodiment of the present invention. Here, the same components as those shown in FIGS. 1 and 6 are denoted by the same symbols, and descriptions of these components are omitted.

[0155]如图10所示，与第三实施例一样，在第六实施例所涉及的半导体发光装置30A中，LED芯片12以让LED芯片12的背面与衬底31的主面相向的、所谓的接合点在上侧(junction-up)的方式(朝上安装)安装在印刷布线衬底上，该印刷布线衬底包括衬底31，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0155] As shown in FIG. 10, as in the third embodiment, in the semiconductor light emitting device 30A according to the sixth embodiment, theLED chip 12 is arranged such that the back surface of theLED chip 12 faces the main surface of thesubstrate 31, The so-called junction-up (junction-up) manner (upward mounting) is mounted on the printed wiring substrate, the printed wiring substrate includes asubstrate 31, and at least includes Thefirst wiring 32A and thesecond wiring 32B on the main surface and the back surface.

[0156]密封部26由第一密封部26A和第二密封部26B构成，该第一密封部26A以半球状直接覆盖半导体发光装置芯片12；该第二密封部26B以半球状直接覆盖该第一密封部26A。The sealingportion 26 is composed of afirst sealing portion 26A and asecond sealing portion 26B. Thefirst sealing portion 26A directly covers the semiconductor light emittingdevice chip 12 in a hemispherical shape; thesecond sealing portion 26B directly covers the second sealing portion in a hemispherical shape. A sealingportion 26A.

[0157]第一密封部26A，由包含基体材料16a及第一微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述第一微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。[0157] Thefirst sealing portion 26A is composed of a sealingmaterial 16d made of a composite material comprising abase material 16a andfirst particles 16b, and afluorescent material 16c. Thefirst particles 16b are made of inorganic materials and uniformly dispersed inside thebase material 16a.

[0158]第二密封部26B，由包含基体材料16a及第二微粒17b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述第二微粒17b由无机材料构成，已均匀地分散在该基体材料16a的内部。在此，用与构成第一实施例的密封部16的材料一样的材料作为构成第一密封部26A及第二密封部26B的材料就可以。不过，在第六实施例中，选出折射率高于第二微粒17b的折射率的材料作为第一微粒16b。[0158] Thesecond sealing portion 26B is composed of a sealingmaterial 16d made of a composite material including amatrix material 16a and asecond particle 17b, and afluorescent material 16c. Thesecond particle 17b is made of an inorganic material and has been uniformly dispersed inside thebase material 16a. Here, the same material as the material constituting the sealingportion 16 of the first embodiment may be used as the material constituting thefirst sealing portion 26A and thesecond sealing portion 26B. However, in the sixth embodiment, a material having a higher refractive index than that of thesecond particles 17b is selected as thefirst particles 16b.

[0159]在包括晶体生长用衬底(外延衬底(epitaxial substrate))在内，LED芯片12由氮化镓(GaN)半导体构成的情况下，因为氮化镓的折射率如[图表1]所示约为2.5，所以即使通过添加微粒来将密封部的折射率设定为提取效率最高的1.8左右，该密封部的折射率与空气的折射率之差仍然也很大。[0159] In the case where theLED chip 12 is composed of gallium nitride (GaN) semiconductor including the substrate for crystal growth (epitaxial substrate), since the refractive index of gallium nitride is as [Graph 1] It is shown as about 2.5, so even if the refractive index of the sealing part is set to about 1.8 for the highest extraction efficiency by adding fine particles, the difference between the refractive index of the sealing part and the refractive index of air is still large.

[0160]因此，在第六实施例中，使离LED芯片12较近的第一密封部26A的折射率值高于离LED芯片12较远的第二密封部26B的折射率值。具体而言，采用折射率比添加在第一密封部26A中的第一微粒16b的折射率低的无机材料作为添加在第二密封部26B中的第二微粒17b。[0160] Therefore, in the sixth embodiment, the refractive index value of thefirst sealing portion 26A closer to theLED chip 12 is made higher than the refractive index value of thesecond sealing portion 26B farther from theLED chip 12. Specifically, an inorganic material having a refractive index lower than that of the firstfine particles 16 b added in thefirst sealing portion 26A is used as the secondfine particles 17 b added in thesecond sealing portion 26B.

[0161]根据所述结构，因为与空气接触的第二密封部26B的折射率低于与LED芯片12接触的第一密封部26A的折射率，所以第二密封部26B的折射率与空气的折射率之间的差较小。因此，能够减低在第二密封部26B与空气之间的界面上会造成的、出射光的全反射，因而能够提高密封部26的耐光性和耐热性，能够进一步提高光提取效率。[0161] According to the structure, since the refractive index of thesecond sealing portion 26B in contact with the air is lower than the refractive index of thefirst sealing portion 26A in contact with theLED chip 12, the refractive index of thesecond sealing portion 26B is different from that of the air. The difference between the refractive indices is small. Therefore, the total reflection of emitted light at the interface between thesecond sealing portion 26B and the air can be reduced, so the light resistance and heat resistance of the sealingportion 26 can be improved, and the light extraction efficiency can be further improved.

[0162]此外，在第六实施例中，因为例如利用灌封成型(potting)法将第一密封部26A及第二密封部26B都形成为外形呈半球状，所以出射光的全反射进一步减低。[0162] In addition, in the sixth embodiment, since thefirst sealing portion 26A and thesecond sealing portion 26B are both formed in a hemispherical shape by, for example, potting, the total reflection of outgoing light is further reduced. .

[0163]补充说明一下，在此对第一密封部26A和第二密封部26B都添加了荧光材料16c。也可以仅对第一密封部26A及第二密封部26B中的一个密封部添加荧光材料16c。[0163] As a supplementary note, here, thefluorescent material 16c is added to both thefirst sealing portion 26A and thesecond sealing portion 26B. Thefluorescent material 16c may be added to only one of thefirst sealing portion 26A and thesecond sealing portion 26B.

[0164](第六实施例的第一变形例)(First modified example of the sixth embodiment)

图11，示意地表示为本发明的第六实施例的第一变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 11 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a first modification of the sixth embodiment of the present invention.

[0165]如图11所示，在第一变形例所涉及的半导体发光装置30B中，将直接覆盖LED芯片12的第一密封部26A的剖面外形设为四角形。[0165] As shown in FIG. 11 , in the semiconductor light emitting device 30B according to the first modified example, the cross-sectional outer shape of thefirst sealing portion 26A that directly covers theLED chip 12 is square.

[0166]这样，就能够利用印刷法作为用来形成第一密封部26A的密封材料16d的方法。因此，生产率提高。[0166] In this way, the printing method can be utilized as a method for forming the sealingmaterial 16d of thefirst sealing portion 26A. Therefore, productivity improves.

[0167](第六实施例的第二变形例)(Second modification of the sixth embodiment)

图12，示意地表示为本发明的第六实施例的第二变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 12 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a second modified example of the sixth embodiment of the present invention.

[0168]如图12所示，在第二变形例所涉及的半导体发光装置30C中，将直接覆盖LED芯片12的第一密封部26A、和覆盖该第一密封部26A的第二密封部26B的剖面外形都设为四角形。[0168] As shown in FIG. 12, in the semiconductor light emitting device 30C according to the second modified example, thefirst sealing portion 26A directly covering theLED chip 12 and thesecond sealing portion 26B covering thefirst sealing portion 26A The cross-sectional shape is set as a quadrangle.

[0169]这样，就能够利用印刷法作为用来形成第一密封部26A的密封材料16d的方法，也能够利用传递模塑法形成第二密封部26B。因此，生产率提高。而且，因为密封部26的上表面很平坦，所以能够容易地使用该半导体发光装置作为器件。[0169] In this way, the printing method can be used as the method for forming the sealingmaterial 16d of thefirst sealing portion 26A, and thesecond sealing portion 26B can also be formed by the transfer molding method. Therefore, productivity improves. Furthermore, since the upper surface of the sealingportion 26 is flat, the semiconductor light emitting device can be easily used as a device.

[0170](第六实施例的第三变形例)(Third modification of the sixth embodiment)

图13，示意地表示为本发明的第六实施例的第三变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 13 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a third modified example of the sixth embodiment of the present invention.

[0171]如图13所示，在第三变形例所涉及的半导体发光装置30D中，将直接覆盖LED芯片12的第一密封部26A的外形设为半球状，并将覆盖该第一密封部26A的第二密封部26B的剖面外形设为四角形。[0171] As shown in FIG. 13, in the semiconductor light emitting device 30D related to the third modified example, the outer shape of thefirst sealing portion 26A directly covering theLED chip 12 is hemispherical, and the outer shape of thefirst sealing portion 26A covering the first sealing portion The cross-sectional outer shape of thesecond sealing portion 26B of 26A is a square.

[0172]这样，全反射就由于外形呈半球状的第一密封部26A的影响而减低，并且由于上表面很平坦的第二密封部26B的影响而能够容易地使用该半导体发光装置作为器件。[0172] Thus, total reflection is reduced by the influence of the hemisphericalfirst sealing portion 26A, and the semiconductor light emitting device can be easily used as a device due to the influence of thesecond sealing portion 26B having a flat upper surface.

[0173](第六实施例的第四变形例)(Fourth modification of the sixth embodiment)

图14，示意地表示为本发明的第六实施例的第四变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 14 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fourth modification of the sixth embodiment of the present invention.

[0174]如图14所示，与第五实施例一样，在第四变形例所涉及的半导体发光装置50A中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0174] As shown in FIG. 14, as in the fifth embodiment, in the semiconductorlight emitting device 50A according to the fourth modification, theLED chip 12 is fixed in thecase member 51 having theconcave portion 51a by the upward mounting method. on the bottom surface of theconcave portion 51a.

[0175]在此，直接覆盖LED芯片12的第一密封部26A、和覆盖该第一密封部26A的第二密封部26B的剖面形状，都呈四角形。[0175] Here, the cross-sectional shapes of thefirst sealing portion 26A directly covering theLED chip 12 and thesecond sealing portion 26B covering thefirst sealing portion 26A are quadrangular.

[0176]在本变形例中，在将白色耐热性树脂材料用作壳体部件51的情况，或对壳体部件51的内侧壁面上进行了例如利用铝(Al)等金属的沉积等的金属化的情况下，该壳体部件51的内侧壁面起到反射面的作用。而且，因为将壳体部件51的内侧壁面设为从下方向上方变宽的倒锥形，所以除了用第一微粒16b和第二微粒17b使密封部26具有折射率差这一结构以外，光提取效率还根据壳体部件51及该壳体部件51的形状提高。[0176] In this modified example, in the case where a white heat-resistant resin material is used as thecase member 51, or on the inner side wall surface of thecase member 51, for example, deposition of a metal such as aluminum (Al) is performed. In the case of metallization, the inner wall surface of thecase member 51 functions as a reflective surface. Furthermore, since the inner wall surface of thecase member 51 is formed into an inverted tapered shape that widens from the bottom to the top, in addition to the structure in which the sealingportion 26 has a refractive index difference between thefirst particle 16b and thesecond particle 17b, the light The extraction efficiency is also increased depending on thehousing part 51 and the shape of thishousing part 51 .

[0177]补充说明一下，在形成第一密封部26A时想利用印刷法而不能直接对壳体部件51的凹部51a底面上进行印刷的情况下，例如只要事先将LED芯片12安装在副(sub)安装部件上，再在利用印刷法形成第一密封部26A后将该副安装部件安装在壳体部件51底面上就可以。[0177] As a supplementary note, when forming thefirst sealing portion 26A, if you want to use the printing method and cannot directly print on the bottom surface of theconcave portion 51a of thehousing member 51, for example, you only need to install theLED chip 12 on the sub (sub) in advance. ) on the mounting member, and then the sub-mounting member may be mounted on the bottom surface of thecase member 51 after forming thefirst sealing portion 26A by printing.

[0178]图15(a)和图15(b)，表示在第六实施例的第四变形例所涉及的半导体发光装置50A中，通过模拟试验求出第一密封部26A及第二密封部26B的各种折射率与光提取效率之间的关系的结果。在此，图15(a)表示将氮化镓用作构成LED芯片12的衬底材料的情况；图15(b)表示将蓝宝石用作衬底材料的情况。在此，第一密封部26A的厚度设为500μm；第二密封部26B的厚度设为200μm。Fig. 15(a) and Fig. 15(b) show that in the semiconductor light-emittingdevice 50A related to the fourth modified example of the sixth embodiment, thefirst sealing portion 26A and the second sealing portion are obtained through a simulation test. The results of the relationship between the various refractive indices of 26B and the light extraction efficiency. Here, FIG. 15( a ) shows the case where gallium nitride is used as the substrate material constituting theLED chip 12 ; FIG. 15( b ) shows the case where sapphire is used as the substrate material. Here, the thickness of thefirst sealing portion 26A is set to 500 μm; the thickness of thesecond sealing portion 26B is set to 200 μm.

[0179]由图15(a)和图15(b)可见，在将氮化镓用作LED芯片12的衬底的情况下，第一密封部26A的折射率越高，光提取效率越高。而在将蓝宝石用作LED芯片12的衬底的情况下，第一密封部26A的折射率变化所带来的影响很小。[0179] It can be seen from FIG. 15(a) and FIG. 15(b) that when gallium nitride is used as the substrate of theLED chip 12, the higher the refractive index of thefirst sealing portion 26A, the higher the light extraction efficiency . On the other hand, when sapphire is used as the substrate of theLED chip 12 , the influence of the change in the refractive index of thefirst sealing portion 26A is small.

[0180]无论衬底是氮化镓的还是蓝宝石的，都有下述倾向，即：第二密封部26B的折射率越低，光提取效率就越高，并且光提取效率相对第一密封部26A的折射率变化的变化率越小。[0180] Regardless of whether the substrate is gallium nitride or sapphire, there is a tendency that the lower the refractive index of thesecond sealing portion 26B, the higher the light extraction efficiency, and the light extraction efficiency is higher than that of thefirst sealing portion 26B. The change rate of the refractive index change of 26A is smaller.

[0181](第六实施例的第五变形例)(Fifth modification of the sixth embodiment)

图16，示意地表示为本发明的第六实施例的第五变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 16 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fifth modified example of the sixth embodiment of the present invention.

[0182]如图16所示，在第五变形例所涉及的半导体发光装置50B中，LED芯片12被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0182] As shown in FIG. 16, in the semiconductorlight emitting device 50B according to the fifth modification, theLED chip 12 is fixed to the bottom surface of therecess 51a in thecase member 51 having therecess 51a.

[0183]在此，将直接覆盖LED芯片12的第一密封部26A的外形设为半球状，并将覆盖该第一密封部26A的第二密封部26B的剖面外形设为四角形。[0183] Here, the outer shape of thefirst sealing portion 26A directly covering theLED chip 12 is hemispherical, and the cross-sectional outer shape of thesecond sealing portion 26B covering thefirst sealing portion 26A is quadrangular.

[0184]这样，就能够利用外形呈半球状的第一密封部26A减低反射，能够利用壳体部件51提高光提取效率。[0184] In this way, reflection can be reduced by thefirst sealing portion 26A having a hemispherical shape, and light extraction efficiency can be improved by thecase member 51.

[0185](第六实施例的第六变形例)(Sixth modified example of the sixth embodiment)

图17，示意地表示为本发明的第六实施例的第六变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 17 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a sixth modified example of the sixth embodiment of the present invention.

[0186]如图17所示，在第六变形例所涉及的半导体发光装置50C中，使添加在第二密封部26B的密封材料16d中的微粒16b的组成与添加在第一密封部26A的密封材料16d中的微粒16b的组成一样，并且使第一密封部26A中的微粒16b在密封材料16d中所占的比例高于第二密封部26B中的微粒16b在密封材料16d中所占的比例。就是说，使第二密封部26B中的微粒16b添加浓度低于第一密封部26A中的微粒16b添加浓度。在此，当设定添加浓度差时，也可以让浓度具有浓度梯度，也可以让浓度阶段性地变化。[0186] As shown in FIG. 17, in the semiconductorlight emitting device 50C according to the sixth modified example, the composition of theparticles 16b added to the sealingmaterial 16d of thesecond sealing portion 26B is the same as that of the particles added to thefirst sealing portion 26A. The composition of theparticles 16b in the sealingmaterial 16d is the same, and the proportion of theparticles 16b in the sealingmaterial 16d in thefirst sealing portion 26A is higher than that of theparticles 16b in the sealingmaterial 16d in thesecond sealing portion 26B. Proportion. That is, the addition concentration of themicroparticles 16b in thesecond sealing portion 26B is made lower than the addition concentration of themicroparticles 16b in thefirst sealing portion 26A. Here, when setting the concentration difference to be added, the concentration may have a concentration gradient, or the concentration may be changed stepwise.

[0187]通过所述做法也能使第二密封部26B的折射率小于第一密封部26A的折射率。[0187] By doing so, the refractive index of thesecond sealing portion 26B can also be made smaller than that of thefirst sealing portion 26A.

[0188]补充说明一下，在本变形例中，用同一组成的无机材料作为添加在第一密封部26A中的微粒16b及添加在第二密封部26B中的微粒16b，仅变更了添加浓度。只要使第二密封部26B的折射率小于第一密封部26A的折射率，就也可以采用下述做法来代替所述方法，该做法是：使添加在第一密封部26A中的微粒16b和添加在第二密封部26B中的微粒16b的组成及浓度不同。[0188] As a supplementary note, in this modified example, inorganic materials of the same composition are used as thefine particles 16b added to thefirst sealing portion 26A and thefine particles 16b added to thesecond sealing portion 26B, and only the concentration of addition is changed. As long as the refractive index of thesecond sealing portion 26B is lower than the refractive index of thefirst sealing portion 26A, the following method may be adopted instead of the above-described method: theparticles 16b added to thefirst sealing portion 26A and the The composition and concentration of themicroparticles 16b added to thesecond sealing portion 26B are different.

[0189]在图17中表示的是将直接覆盖LED芯片12的第一密封部26A的外形设为半球状的情况。也可以是这样的，与在第六实施例的第四变形例中说明的图14一样，将第一密封部26A的剖面外形设为四角形。[0189] FIG. 17 shows a case where the outer shape of thefirst sealing portion 26A that directly covers theLED chip 12 is hemispherical. As in FIG. 14 described in the fourth modified example of the sixth embodiment, the cross-sectional outer shape of thefirst seal portion 26A may be square.

[0190]与本变形例一样，也可以是这样的，在第六实施例和第六实施例的第一到第三变形例中，采用微粒16d来代替添加在第二密封部26B的密封材料16d中的微粒17b，使所述添加的微粒16d的组成与添加在第一密封部26A的密封材料16d中的微粒16b的组成一样，并使第一密封部26A中的微粒16b在密封材料16d中所占的比例高于第二密封部26B中的微粒16b在密封材料16d中所占的比例。[0190] Like this modified example, it may also be such that in the sixth embodiment and the first to third modified examples of the sixth embodiment,particles 16d are used instead of the sealing material added to thesecond sealing portion 26B. 16d in theparticle 17b, make the composition of the addedparticle 16d the same as the composition of theparticle 16b added in the sealingmaterial 16d of thefirst sealing part 26A, and make theparticle 16b in thefirst sealing part 26A in the sealingmaterial 16d The ratio of theparticles 16b in thesecond sealing portion 26B is higher than the ratio of theparticles 16b in the sealingmaterial 16d.

[0191](第六实施例的第七变形例)(Seventh modified example of the sixth embodiment)

在第六实施例和各个变形例中，对第一密封部26A及第二密封部26B都添加了荧光材料16c。也可以仅对所述第一密封部26A及第二密封部26B中的一个密封部添加荧光材料16c。In the sixth embodiment and each modification, thefluorescent material 16c is added to both thefirst sealing portion 26A and thesecond sealing portion 26B. Thefluorescent material 16c may be added to only one of thefirst sealing portion 26A and thesecond sealing portion 26B.

[0192]在图18所示的第七变形例所涉及的半导体发光装置50D中，例如采用能够发绿光的磷化镓(GaP)半导体作为LED芯片12。在该情况下，不需要对密封部26添加荧光材料16c。[0192] In a semiconductorlight emitting device 50D according to a seventh modification shown in FIG. 18 , for example, a gallium phosphide (GaP) semiconductor capable of emitting green light is used as theLED chip 12 . In this case, it is not necessary to addfluorescent material 16 c to sealingportion 26 .

[0193]在用磷化镓半导体作为LED芯片12的情况下，以相向的方式将第一电极14A及第二电极14B分别形成在LED芯片12的下表面上和上表面上。第一电极14A，通过糊状银材料等具有导电性的芯片固定用糊状材料13与第一引线52A电连接；第二电极14B通过金属线15B与第二引线52B电连接。[0193] In the case of using a gallium phosphide semiconductor as theLED chip 12, thefirst electrode 14A and thesecond electrode 14B are formed on the lower surface and the upper surface of theLED chip 12, respectively, in such a manner as to face each other. Thefirst electrode 14A is electrically connected to thefirst lead 52A through aconductive paste material 13 for chip fixing such as paste silver material; thesecond electrode 14B is electrically connected to thesecond lead 52B through ametal wire 15B.

[0194]补充说明一下，在第六实施例及其变形例中，将密封部26设为第一密封部26A及第二密封部26B所构成的双层结构，不过结构并不被限定于双层结构，也可以将结构设为三层以上的叠层结构。不过，若要设为三层以上的叠层结构，就需要设为：在各个密封部中，离LED芯片12越远的密封部的折射率越低。[0194] It should be added that in the sixth embodiment and its modified examples, the sealingportion 26 is set as a double-layer structure composed of thefirst sealing portion 26A and thesecond sealing portion 26B, but the structure is not limited to the double-layer structure. As for the layer structure, the structure may be a laminated structure of three or more layers. However, in order to have a laminated structure of three or more layers, it is necessary to make the refractive index of each sealing part lower as it is farther away from theLED chip 12 .

[0195](第七实施例)(seventh embodiment)

以下，参照附图，对本发明的第七实施例所涉及的半导体发光装置进行说明。Hereinafter, a semiconductor light emitting device according to a seventh embodiment of the present invention will be described with reference to the drawings.

[0196]图19，示意地表示为本发明的第七实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1及图7所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0196] FIG. 19 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a seventh embodiment of the present invention. Here, the same constituent elements as those shown in FIGS. 1 and 7 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0197]如图19所示，与第四实施例一样，在第七实施例所涉及的半导体发光装置40A中，LED芯片12利用使LED芯片12的上表面与衬底31的主面相向的倒装芯片安装法安装在印刷布线衬底上，该印刷布线衬底包括衬底31，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0197] As shown in FIG. 19, like the fourth embodiment, in the semiconductorlight emitting device 40A according to the seventh embodiment, theLED chip 12 utilizes the upper surface of theLED chip 12 facing the main surface of thesubstrate 31. The flip-chip mounting method is mounted on a printed wiring substrate including asubstrate 31 and at least afirst wiring 32A and asecond wiring 32B selectively formed on the main surface and the back surface of thesubstrate 31. .

[0198]密封部26，由第一密封部26A和第二密封部26B构成，该第一密封部26A以半球状直接覆盖半导体发光装置芯片12；该第二密封部26B以半球状直接覆盖该第一密封部26A。The sealingpart 26 is made of afirst sealing part 26A and asecond sealing part 26B. Thefirst sealing part 26A directly covers the semiconductor light emittingdevice chip 12 in a hemispherical shape; thesecond sealing part 26B directly covers the semiconductor light emittingdevice chip 12 in a hemispherical shape. Thefirst sealing portion 26A.

[0199]第一密封部26A，由包含基体材料16a及第一微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述第一微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。[0199] Thefirst sealing portion 26A is composed of a sealingmaterial 16d made of a composite material comprising amatrix material 16a andfirst particles 16b, and afluorescent material 16c. Thefirst particles 16b are made of inorganic materials and uniformly dispersed inside thebase material 16a.

[0200]第二密封部26B，由包含基体材料16a及第二微粒17b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述第二微粒17b由无机材料构成，已均匀地分散在该基体材料16a的内部。在此，只要用与构成第一实施例的密封部16的材料一样的材料作为构成第一密封部26A及第二密封部26B的材料就可以。不过，需要选出折射率大于第二微粒17b的折射率的材料作为第一微粒16b。[0200] Thesecond sealing portion 26B is composed of a sealingmaterial 16d made of a composite material comprising amatrix material 16a and asecond particle 17b, and afluorescent material 16c. Thesecond particle 17b is made of an inorganic material and has been uniformly dispersed inside thebase material 16a. Here, the same material as the material constituting the sealingportion 16 of the first embodiment may be used as the material constituting thefirst sealing portion 26A and thesecond sealing portion 26B. However, it is necessary to select a material having a higher refractive index than thesecond particle 17b as thefirst particle 16b.

[0201]这样，就与第六实施例一样，在第七实施例中，位于离LED芯片12较近的内侧的第一密封部26A的折射率值也大于位于离LED芯片12较远的外侧的第二密封部26B的折射率值。[0201] In this way, just like the sixth embodiment, in the seventh embodiment, the refractive index value of thefirst sealing portion 26A located on the inner side closer to theLED chip 12 is larger than that located on the outer side farther from theLED chip 12. The refractive index value of thesecond sealing portion 26B.

[0202]就是说，因为根据所述结构，与空气接触的第二密封部26B的折射率小于与LED芯片12接触的第一密封部26A的折射率，所以第二密封部26B的折射率与空气的折射率之间的差较小。因此，能够减低出射光在第二密封部26B与空气之间的界面上会造成的全反射，因而能够提高密封部26的耐光性和耐热性，能够进一步提高光提取效率。That is, because according to the structure, the refractive index of thesecond sealing portion 26B in contact with air is smaller than the refractive index of thefirst sealing portion 26A in contact with theLED chip 12, the refractive index of thesecond sealing portion 26B is the same as that of thefirst sealing portion 26A. The difference between the refractive indices of air is smaller. Therefore, the total reflection of emitted light at the interface between thesecond sealing portion 26B and the air can be reduced, so the light resistance and heat resistance of the sealingportion 26 can be improved, and the light extraction efficiency can be further improved.

[0203]此外，在本实施例中，因为例如利用灌封成型法将第一密封部26A及第二密封部26B都形成为外形呈半球状，所以出射光的全反射进一步减低。[0203] In addition, in this embodiment, since thefirst sealing portion 26A and thesecond sealing portion 26B are both formed in a hemispherical shape by potting molding, for example, the total reflection of outgoing light is further reduced.

[0204]补充说明一下，在第七实施例中，对第一密封部26A和第二密封部26B都添加了荧光材料16c。也可以仅对第一密封部26A及第二密封部26B中的一个密封部添加荧光材料16c。[0204] As an additional note, in the seventh embodiment, thefluorescent material 16c is added to both thefirst sealing portion 26A and thesecond sealing portion 26B. Thefluorescent material 16c may be added to only one of thefirst sealing portion 26A and thesecond sealing portion 26B.

[0205](第七实施例的第一变形例)(First modified example of the seventh embodiment)

图20，示意地表示为本发明的第七实施例的第一变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 20 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a first modified example of the seventh embodiment of the present invention.

[0206]如图20所示，在第一变形例所涉及的半导体发光装置40B中，直接覆盖LED芯片12的第一密封部26A的剖面外形呈四角形。[0206] As shown in FIG. 20 , in the semiconductorlight emitting device 40B according to the first modified example, the cross-sectional shape of thefirst sealing portion 26A that directly covers theLED chip 12 is rectangular.

[0207]这样，就能够利用印刷法作为用来形成第一密封部26A的密封材料16d的方法。因此，生产率提高。[0207] In this way, the printing method can be utilized as a method for forming the sealingmaterial 16d of thefirst sealing portion 26A. Therefore, productivity improves.

[0208](第七实施例的第二变形例)(Second modification of the seventh embodiment)

图21，示意地表示为本发明的第七实施例的第二变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 21 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a second modified example of the seventh embodiment of the present invention.

[0209]如图21所示，在第二变形例所涉及的半导体发光装置40C中，将直接覆盖LED芯片12的第一密封部26A、和覆盖该第一密封部26A的第二密封部26B的剖面外形都设为四角形。[0209] As shown in FIG. 21, in the semiconductorlight emitting device 40C according to the second modified example, thefirst sealing portion 26A directly covering theLED chip 12 and thesecond sealing portion 26B covering thefirst sealing portion 26A The cross-sectional shape is set as a quadrangle.

[0210]这样，就能够利用印刷法作为用来形成第一密封部26A的密封材料16d的方法，也能够利用传递模塑法形成第二密封部26B。因此，生产率提高。而且，因为密封部26的上表面很平坦，所以能够容易地使用该半导体发光装置作为器件。[0210] In this way, the printing method can be used as a method for forming the sealingmaterial 16d of thefirst sealing portion 26A, and thesecond sealing portion 26B can also be formed by the transfer molding method. Therefore, productivity improves. Furthermore, since the upper surface of the sealingportion 26 is flat, the semiconductor light emitting device can be easily used as a device.

[0211](第七实施例的第三变形例)(Third modification of the seventh embodiment)

图22，示意地表示为本发明的第七实施例的第三变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 22 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a third modified example of the seventh embodiment of the present invention.

[0212]如图22所示，在第三变形例所涉及的半导体发光装置40D中，将直接覆盖LED芯片12的第一密封部26A的外形设为半球状，并将覆盖该第一密封部26A的第二密封部26B的剖面外形设为四角形。[0212] As shown in FIG. 22, in the semiconductorlight emitting device 40D related to the third modified example, the outer shape of thefirst sealing portion 26A that directly covers theLED chip 12 is hemispherical, and thefirst sealing portion 26A that covers the first sealing portion The cross-sectional outer shape of thesecond sealing portion 26B of 26A is a square.

[0213]这样，全反射就由于外形呈半球状的第一密封部26A的影响而减低，并且由于上表面很平坦的第二密封部26B的影响而能够容易地使用该半导体发光装置作为器件。[0213] Thus, the total reflection is reduced by the influence of the hemisphericalfirst sealing portion 26A, and the semiconductor light emitting device can be easily used as a device due to the influence of thesecond sealing portion 26B having a flat upper surface.

[0214](第七实施例的第四变形例)(Fourth modified example of the seventh embodiment)

图23，示意地表示为本发明的第七实施例的第四变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 23 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fourth modified example of the seventh embodiment of the present invention.

[0215]如图23所示，在第四变形例所涉及的半导体发光装置60中，LED芯片12利用倒装芯片安装法安装在具有凹部51a的壳体部件51中的凹部51a底面上。[0215] As shown in FIG. 23, in the semiconductorlight emitting device 60 according to the fourth modification, theLED chip 12 is mounted on the bottom surface of therecess 51a in thecase member 51 having therecess 51a by flip chip mounting.

[0216]在此，直接覆盖LED芯片12的第一密封部26A、和覆盖该第一密封部26A的第二密封部26B的剖面形状都是四角形。[0216] Here, the cross-sectional shapes of thefirst sealing portion 26A directly covering theLED chip 12 and thesecond sealing portion 26B covering thefirst sealing portion 26A are quadrangular.

[0217]在本变形例中，若将白色耐热性树脂材料用作壳体部件51，该壳体部件51的内侧壁面就起到反射面的作用。而且，因为将壳体部件51的内侧壁面设为从下方向上方变宽的倒锥形，所以除了利用第一微粒16b及第二微粒17b使密封部26具有折射率差的结构以外，光提取效率还根据壳体部件51及该壳体部件51的形状提高。[0217] In this modified example, if a white heat-resistant resin material is used as thecase member 51, the inner wall surface of thecase member 51 functions as a reflective surface. Moreover, since the inner side wall surface of thehousing member 51 is formed into an inverted tapered shape widening from the bottom to the top, in addition to the structure in which the sealingportion 26 has a refractive index difference using thefirst particles 16b and thesecond particles 17b, the light extraction The efficiency is also increased depending on thehousing part 51 and the shape of thishousing part 51 .

[0218](第七实施例的第五变形例)(Fifth modification of the seventh embodiment)

图24，示意地表示为本发明的第七实施例的第五变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 24 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fifth modified example of the seventh embodiment of the present invention.

[0219]如图24所示，在第五变形例所涉及的半导体发光装置60A中，LED芯片12利用倒装芯片安装法隔着副安装部件53安装在具有凹部51a的壳体部件51中的凹部51a底面上。[0219] As shown in FIG. 24, in the semiconductor light-emittingdevice 60A according to the fifth modified example, theLED chip 12 is mounted in thecase member 51 having theconcave portion 51a via thesub-mount member 53 by the flip-chip mounting method. on the bottom surface of theconcave portion 51a.

[0220]LED芯片12，利用倒装芯片安装法安装在上表面至少形成有第一副安装电极54A及第二副安装电极54B的、例如由陶瓷构成的副安装部件53上。[0220] TheLED chip 12 is mounted on thesub-mount member 53 made of, for example, ceramics and having at least the firstsub-mount electrode 54A and the secondsub-mount electrode 54B formed on the upper surface by flip-chip mounting.

[0221]具体而言，第一密封部26A，是利用印刷法以覆盖LED芯片12的方式形成的。具有被第一密封部26A密封着的LED芯片12的副安装部件53安装在壳体部件51的底面上。在形成于副安装部件53上表面上的第一副安装电极54A和第二副安装电极54B中，第一副安装电极54A通过第一金属线15A与第一引线52A电连接，第二副安装电极54B通过第二金属线15B与第二引线52B电连接。[0221] Specifically, thefirst sealing portion 26A is formed so as to cover theLED chip 12 by a printing method. Thesub-mount member 53 having theLED chip 12 sealed by thefirst sealing portion 26A is mounted on the bottom surface of thecase member 51 . Among the firstsub-mount electrode 54A and the secondsub-mount electrode 54B formed on the upper surface of thesub-mount member 53, the firstsub-mount electrode 54A is electrically connected to thefirst lead 52A through thefirst metal wire 15A, and the secondsub-mount electrode 54A is electrically connected to thefirst lead 52A through thefirst metal wire 15A. Theelectrode 54B is electrically connected to thesecond lead 52B through thesecond metal wire 15B.

[0222]补充说明一下，也可以将齐纳(Zener)二极管用作副安装部件53。[0222] Incidentally, a Zener diode may also be used as thesubmount member 53.

[0223]在图24中表示的是，将第一密封部26A的剖面外形设为四角形的情况。也可以将第一密封部26A的外形设为半球状。[0223] FIG. 24 shows a case where the cross-sectional outer shape of thefirst sealing portion 26A is rectangular. The outer shape of thefirst sealing portion 26A may also be hemispherical.

[0224](第七实施例的第六变形例)(Sixth modified example of the seventh embodiment)

图25，示意地表示为本发明的第七实施例的第六变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 25 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a sixth modified example of the seventh embodiment of the present invention.

[0225]如图25所示，在第六变形例所涉及的半导体发光装置60B中，LED芯片12利用倒装芯片安装法安装并固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0225] As shown in FIG. 25, in the semiconductorlight emitting device 60B according to the sixth modified example, theLED chip 12 is mounted and fixed on the bottom surface of theconcave portion 51a in thecase member 51 having theconcave portion 51a by flip-chip mounting. .

[0226]在此，将直接覆盖LED芯片12的第一密封部26A的外形设为半球状，将覆盖该第一密封部26A的第二密封部26B的剖面外形设为四角形。[0226] Here, the outer shape of thefirst sealing portion 26A directly covering theLED chip 12 is hemispherical, and the cross-sectional outer shape of thesecond sealing portion 26B covering thefirst sealing portion 26A is quadrangular.

[0227]这样，外形呈半球状的第一密封部26A就减低全反射，壳体部件51使光提取效率提高。[0227] In this way, thefirst sealing portion 26A having a hemispherical shape reduces total reflection, and thecase member 51 improves light extraction efficiency.

[0228](第七实施例的第七变形例)(Seventh modified example of the seventh embodiment)

图26，示意地表示为本发明的第七实施例的第七变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 26 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a seventh modification of the seventh embodiment of the present invention.

[0229]如图26所示，在第七变形例所涉及的半导体发光装置60C中，使添加在第二密封部26B的密封材料16d中的微粒16b的组成与添加在第一密封部26A的密封材料16d中的微粒16b的组成一样，并使第一密封部26A中的微粒16b在密封材料16d中所占的比例高于第二密封部26B中的微粒16b在密封材料16d中所占的比例。就是说，使第二密封部26B中的微粒16b添加浓度低于第一密封部26A中的微粒16b添加浓度。在此，当设定添加浓度差时，也可以让浓度具有浓度梯度，也可以让浓度阶段性地变化。[0229] As shown in FIG. 26, in the semiconductorlight emitting device 60C according to the seventh modified example, the composition of theparticles 16b added to the sealingmaterial 16d of thesecond sealing portion 26B is the same as that of the particles added to thefirst sealing portion 26A. The composition of theparticles 16b in the sealingmaterial 16d is the same, and the proportion of theparticles 16b in the sealingmaterial 16d in thefirst sealing portion 26A is higher than that of theparticles 16b in the sealingmaterial 16d in thesecond sealing portion 26B. Proportion. That is, the addition concentration of themicroparticles 16b in thesecond sealing portion 26B is made lower than the addition concentration of themicroparticles 16b in thefirst sealing portion 26A. Here, when setting the concentration difference to be added, the concentration may have a concentration gradient, or the concentration may be changed stepwise.

[0230]通过所述做法也能使第二密封部26B的折射率小于第一密封部26A的折射率。[0230] Also by doing so, the refractive index of thesecond sealing portion 26B can be made smaller than that of thefirst sealing portion 26A.

[0231]补充说明一下，在本变形例中，用同一组成的无机材料作为添加在第一密封部26A中的微粒16b及添加在第二密封部26B中的微粒16b，仅变更了该无机材料的添加浓度。只要使第二密封部26B的折射率小于第一密封部26A的折射率，就也可以采用下述做法来代替所述方法，该做法是：使添加在第一密封部26A中的微粒16b和添加在第二密封部26B中的微粒16b的组成及浓度不同。[0231] As a supplementary explanation, in this modified example, inorganic materials of the same composition are used as theparticles 16b added in thefirst sealing portion 26A and theparticles 16b added in thesecond sealing portion 26B, and only the inorganic materials are changed. added concentration. As long as the refractive index of thesecond sealing portion 26B is lower than the refractive index of thefirst sealing portion 26A, the following method may be adopted instead of the above-described method: theparticles 16b added to thefirst sealing portion 26A and the The composition and concentration of themicroparticles 16b added to thesecond sealing portion 26B are different.

[0232]在图26中表示的是将直接覆盖LED芯片12的第一密封部26A的外形设为半球状的情况。也可以是这样的，与在第七实施例的第四变形例中说明的图23一样，将第一密封部26A的剖面外形设为四角形。[0232] FIG. 26 shows a case where the outer shape of thefirst sealing portion 26A that directly covers theLED chip 12 is hemispherical. As in FIG. 23 described in the fourth modified example of the seventh embodiment, the cross-sectional outer shape of thefirst sealing portion 26A may be square.

[0233]与本变形例一样，也可以是这样的，在第七实施例和第七实施例的第一到第三及第五变形例中，采用微粒16d来代替添加在第二密封部26B的密封材料16d中的微粒17b，使所述添加的微粒16d的组成与添加在第一密封部26A的密封材料16d中的微粒16b的组成一样，并使第一密封部26A中的微粒16b在密封材料16d中所占的比例高于第二密封部26B中的微粒16b在密封材料16d中所占的比例。[0233] Like this modified example, it may also be such that in the seventh embodiment and the first to third and fifth modified examples of the seventh embodiment,particles 16d are used instead of adding particles in thesecond sealing portion 26B. Theparticles 17b in the sealingmaterial 16d, the composition of the addedparticles 16d is the same as the composition of theparticles 16b added in the sealingmaterial 16d of thefirst sealing part 26A, and theparticles 16b in thefirst sealing part 26A are in The proportion occupied by the sealingmaterial 16d is higher than the proportion occupied by theparticles 16b in thesecond sealing portion 26B in the sealingmaterial 16d.

[0234]在第七实施例及各个变形例中，对第一密封部26A及第二密封部26B都添加了荧光材料16c。也可以仅对第一密封部26A及第二密封部26B中的一个密封部添加荧光材料16c。[0234] In the seventh embodiment and each modification, thefluorescent material 16c is added to both thefirst sealing portion 26A and thesecond sealing portion 26B. Thefluorescent material 16c may be added to only one of thefirst sealing portion 26A and thesecond sealing portion 26B.

[0235]补充说明一下，在第七实施例及其变形例中，将密封部26设为第一密封部26A及第二密封部26B所构成的双层结构，不过结构并不被限定于双层结构，也可以将结构设为三层以上的叠层结构。不过，若要设为三层以上的叠层结构，就需要设为：在各个密封部中，离LED芯片12越远的密封部的折射率越低。[0235] It should be added that in the seventh embodiment and its modifications, the sealingportion 26 is set to a double-layer structure composed of thefirst sealing portion 26A and thesecond sealing portion 26B, but the structure is not limited to the double-layer structure. As for the layer structure, the structure may be a laminated structure of three or more layers. However, in order to have a laminated structure of three or more layers, it is necessary to make the refractive index of each sealing part lower as it is farther away from theLED chip 12 .

[0236](第八实施例)(eighth embodiment)

下面，参照附图，对本发明的第八实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to an eighth embodiment of the present invention will be described with reference to the drawings.

[0237]图27，示意地表示为本发明的第八实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1及图6所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0237] FIG. 27 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to an eighth embodiment of the present invention. Here, the same components as those shown in FIGS. 1 and 6 are denoted by the same symbols, and descriptions of these components are omitted.

[0238]如图27所示，与第三实施例一样，在第八实施例所涉及的半导体发光装置30E中，LED芯片12以让LED芯片12的背面与衬底31的主面相向的、所谓的接合点在上侧(junction-up)的方式(朝上安装)安装在印刷布线衬底上，该印刷布线衬底包括衬底，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0238] As shown in FIG. 27, as in the third embodiment, in the semiconductorlight emitting device 30E according to the eighth embodiment, theLED chip 12 is arranged such that the back surface of theLED chip 12 faces the main surface of thesubstrate 31, The so-called junction-up (junction-up) manner (upward mounting) is mounted on the printed wiring substrate, the printed wiring substrate includes the substrate, and at least the main substrate selectively formed on thesubstrate 31. Thefirst wiring 32A and thesecond wiring 32B on the front and rear surfaces.

[0239]密封部16由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。用与构成第一实施例的密封部16的材料一样的材料作为构成密封部16的材料就可以。不过，在第八实施例中，设为：使离LED芯片12较近的内侧区域的、微粒16b在复合材料中所占的比例高于处在该内侧区域的外侧的外侧区域的、微粒16b在复合材料中所占的比例。The sealingportion 16 is made of a sealingmaterial 16d made of a composite material comprising amatrix material 16a andparticles 16b, and afluorescent material 16c. Theparticles 16b are made of inorganic materials and uniformly dispersed in thematrix material 16a. . As the material constituting the sealingportion 16, the same material as that constituting the sealingportion 16 of the first embodiment may be used. However, in the eighth embodiment, it is assumed that the proportion of theparticles 16b in the composite material in the inner region closer to theLED chip 12 is higher than that of theparticles 16b in the outer region outside the inner region. percentage of the composite material.

[0240]在包括晶体生长用衬底(外延衬底(epitaxial substrate))在内，LED芯片12由氮化镓(GaN)半导体构成的情况下，因为氮化镓的折射率如[图表1]所示约为2.5，所以即使通过添加微粒来将密封部的折射率设定为提取效率最高的1.8左右，该密封部的折射率与空气的折射率之差仍然也很大。[0240] In the case where theLED chip 12 is composed of gallium nitride (GaN) semiconductor including the substrate for crystal growth (epitaxial substrate), since the refractive index of gallium nitride is as [Graph 1] It is shown as about 2.5, so even if the refractive index of the sealing part is set to about 1.8 for the highest extraction efficiency by adding fine particles, the difference between the refractive index of the sealing part and the refractive index of air is still large.

[0241]于是，在第八实施例中，使密封部16中的离LED芯片12较近的内侧区域的折射率值高于处在该内侧区域的外侧的外侧区域的折射率值。具体而言，在内侧区域将添加在密封部16中的微粒16b的浓度设为较高的值，使微粒16b的浓度向外侧逐渐变低，从而使密封部16的外侧区域的折射率低于处在该外侧区域的内侧的内侧区域的折射率。这时，也可以使微粒16b的浓度从内侧向外侧逐渐变低，也可以使微粒16b的浓度从内侧向外侧阶段性地变低。[0241] Therefore, in the eighth embodiment, the refractive index value of the inner region closer to theLED chip 12 in the sealingportion 16 is higher than the refractive index value of the outer region outside the inner region. Specifically, the concentration of themicroparticles 16b added to the sealingpart 16 is set to a high value in the inner region, and the concentration of themicroparticles 16b is gradually lowered outward, so that the refractive index of the outer region of the sealingpart 16 is lower than The index of refraction of the inner region that is inside the outer region. At this time, the concentration of themicroparticles 16b may gradually decrease from the inner side to the outer side, or the concentration of themicroparticles 16b may gradually decrease from the inner side to the outer side.

[0242]因此，根据所述结构，与空气接触的密封部16的外侧区域的折射率低于与LED芯片12接触的内侧区域的折射率，因而密封部16的外侧区域的折射率和空气的折射率之差较小。因此，能够减低出射光在密封部16与空气之间的界面造成的全反射，因而密封部16的耐光性及耐热性提高，并且能够进一步提高光提取效率。[0242] Therefore, according to the structure, the refractive index of the outer region of the sealingportion 16 in contact with air is lower than the refractive index of the inner region in contact with theLED chip 12, so the refractive index of the outer region of the sealingportion 16 and the air The difference in refractive index is small. Therefore, the total reflection of emitted light at the interface between the sealingportion 16 and air can be reduced, so that the light resistance and heat resistance of the sealingportion 16 are improved, and the light extraction efficiency can be further improved.

[0243]此外，在第本实施例中，因为例如利用灌封成型(potting)法将密封部16形成为外形呈半球状，所以出射光的全反射进一步减低。在此，作为使微粒16b的添加浓度在内侧区域较高而在外侧区域较低的方法，可以举出用硬化前的液状复合材料进行多次灌封成型的方法。就是说，只要以让外侧区域用复合材料中的微粒16b的添加比例小于内侧区域用复合材料的添加比例的方式进行灌封成型就可以。这时，也可以是这样的，选出折射率低于第一次灌封成型的微粒16b的折射率的、由无机材料构成的其他微粒作为第二次以后的灌封成型的微粒16b。之后，能够通过硬化使所述液状复合材料成为由复合材料构成的密封部16，来形成本实施例的结构。[0243] Furthermore, in the present embodiment, since the sealingportion 16 is formed in a hemispherical shape by, for example, potting, the total reflection of outgoing light is further reduced. Here, as a method of making the addition concentration of themicroparticles 16b higher in the inner region and lower in the outer region, there may be mentioned a method of performing multiple potting molding with a liquid composite material before hardening. In other words, the potting molding may be performed so that the addition ratio of thefine particles 16b in the composite material for the outer region is smaller than the ratio of the composite material for the inner region. At this time, other particles made of an inorganic material having a refractive index lower than that of the firstpotted particles 16b may be selected as the second and subsequentpotted particles 16b. Thereafter, the structure of this embodiment can be formed by curing the liquid composite material to form the sealingportion 16 made of the composite material.

[0244]补充说明一下，在第八实施例中，对密封部16添加了荧光材料16c。不过，如上所述，在采用磷化镓(GaP)半导体作为LED芯片12而构成的绿光LED装置等的情况下，不需要使密封部16包含荧光材料16c。[0244] As a supplementary note, in the eighth embodiment, thefluorescent material 16c is added to the sealingportion 16. However, as described above, in the case of a green LED device or the like configured using a gallium phosphide (GaP) semiconductor as theLED chip 12 , it is not necessary to include thefluorescent material 16 c in the sealingportion 16 .

[0245](第八实施例的第一变形例)(First modified example of the eighth embodiment)

图28，示意地表示为本发明的第八实施例的第一变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 28 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a first modification of the eighth embodiment of the present invention.

[0246]如图28所示，在第一变形例所涉及的半导体发光装置30F中，将微粒16b的添加浓度向外侧逐渐减低的密封部16的剖面外形设为四角形。[0246] As shown in FIG. 28 , in the semiconductorlight emitting device 30F according to the first modification, the cross-sectional shape of the sealingportion 16 where the dosing concentration of themicroparticles 16b gradually decreases outward is a quadrangular shape.

[0247]作为本变形例所涉及的密封部16中的密封材料16d的形成方法，可以利用以使密封部16的外侧的微粒16b添加浓度低于密封部16的内侧的微粒16b添加浓度的方式多次进行传递模塑的方法。[0247] As a method for forming the sealingmaterial 16d in the sealingportion 16 according to this modification, a mode in which the concentration of theparticles 16b added to the outside of the sealingportion 16 is lower than the concentration of theparticles 16b added to the inside of the sealingportion 16 can be utilized. A method in which transfer molding is performed multiple times.

[0248](第八实施例的第二变形例)(Second modification of the eighth embodiment)

图29，示意地表示为本发明的第八实施例的第二变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 29 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a second modified example of the eighth embodiment of the present invention.

[0249]如图29所示，与第五实施例一样，在第二变形例所涉及的半导体发光装置50E中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0249] As shown in FIG. 29, as in the fifth embodiment, in the semiconductorlight emitting device 50E according to the second modified example, theLED chip 12 is fixed in thecase member 51 having theconcave portion 51a by the upward mounting method. on the bottom surface of theconcave portion 51a.

[0250]在此，覆盖LED芯片12的密封部16A的剖面形状是四角形。[0250] Here, the cross-sectional shape of the sealing portion 16A covering theLED chip 12 is a square.

[0251]在本变形例中，在将白色耐热性树脂材料用作壳体部件51的情况，或对壳体部件51的内侧壁面上进行了例如利用铝(Al)等金属的沉积等的金属化的情况下，该壳体部件51的内侧壁面起到反射面的作用。而且，因为将壳体部件51的内侧壁面设为从下方向上方变宽的倒锥形，所以除了使微粒16b的添加浓度向外侧逐渐变低来使密封部16具有逐渐变低的折射率差这一结构以外，光提取效率还根据壳体部件51及该壳体部件51的形状提高。[0251] In this modified example, in the case where a white heat-resistant resin material is used as thecase member 51, or on the inner side wall surface of thecase member 51, for example, deposition of a metal such as aluminum (Al) is performed. In the case of metallization, the inner wall surface of thecase member 51 functions as a reflective surface. Furthermore, since the inner wall surface of thehousing member 51 is formed into an inverted tapered shape that widens from the bottom to the top, the sealingportion 16 has a gradually lower refractive index difference in addition to making the concentration of theparticles 16b gradually lower toward the outside. In addition to this structure, the light extraction efficiency is also improved by thecase member 51 and the shape of thecase member 51 .

[0252]补充说明一下，能够通过进行多次灌封成型来形成本变形例所涉及的密封部16。[0252] As a supplementary note, the sealingportion 16 according to this modified example can be formed by performing potting molding multiple times.

[0253](第九实施例)(ninth embodiment)

下面，参照附图，对本发明的第九实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a ninth embodiment of the present invention will be described with reference to the drawings.

[0254]图30，示意地表示为本发明的第九实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图1及图7所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0254] FIG. 30 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a ninth embodiment of the present invention. Here, the same constituent elements as those shown in FIGS. 1 and 7 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0255]如图30所示，与第四实施例一样，在第九实施例所涉及的半导体发光装置40E中，LED芯片12利用使LED芯片12的上表面与衬底31的主面相向的倒装芯片安装法安装在印刷布线衬底上，该印刷布线衬底包括衬底31，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0255] As shown in FIG. 30, as in the fourth embodiment, in the semiconductor light emitting device 40E according to the ninth embodiment, theLED chip 12 utilizes the upper surface of theLED chip 12 facing the main surface of thesubstrate 31. The flip-chip mounting method is mounted on a printed wiring substrate including asubstrate 31 and at least afirst wiring 32A and asecond wiring 32B selectively formed on the main surface and the back surface of thesubstrate 31. .

[0256]密封部16由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。用与构成第一实施例的密封部16的材料一样的材料作为构成密封部16的材料就可以。不过，在第九实施例中，设为：使离LED芯片12较近的内侧区域的、微粒16b在复合材料中所占的比例高于处在该内侧区域的外侧的外侧区域的、微粒16b在复合材料中所占的比例。[0256] The sealingportion 16 is made of a sealingmaterial 16d made of a composite material comprising amatrix material 16a andparticles 16b, and afluorescent material 16c. Theparticles 16b are made of inorganic materials and uniformly dispersed in thematrix material 16a. . As the material constituting the sealingportion 16, the same material as that constituting the sealingportion 16 of the first embodiment may be used. However, in the ninth embodiment, it is assumed that the proportion of theparticles 16b in the composite material in the inner region closer to theLED chip 12 is higher than that of theparticles 16b in the outer region outside the inner region. percentage of the composite material.

[0257]这样，在第六实施例和第八实施例一样，在第九实施例中，离LED芯片12较近的、密封部16内侧区域的折射率值也高于处在该内侧区域外侧的外侧区域的折射率值。[0257] Thus, in the sixth embodiment and the eighth embodiment, in the ninth embodiment, the refractive index value of the inner region of the sealingportion 16 that is closer to theLED chip 12 is also higher than that outside the inner region. The refractive index value of the outer region of .

[0258]就是说，根据所述结构，因为与空气接触的、密封部16的外侧区域的折射率低于与LED芯片12接触的内侧区域的折射率，因而密封部16的外侧区域的折射率和空气的折射率之差较小。因此，能够减低出射光在密封部16与空气之间的界面造成的全反射，因而密封部16的耐光性及耐热性提高，并且能够进一步提高光提取效率。在此，也可以让微粒16b的添加浓度从内侧向外侧逐渐变低；也可以让该添加浓度阶段性地变低。[0258] That is, according to the structure, since the refractive index of the outer region of the sealingportion 16 that is in contact with air is lower than the refractive index of the inner region that is in contact with theLED chip 12, the refractive index of the outer region of the sealingportion 16 The difference between the refractive index of air and air is small. Therefore, the total reflection of emitted light at the interface between the sealingportion 16 and air can be reduced, so that the light resistance and heat resistance of the sealingportion 16 are improved, and the light extraction efficiency can be further improved. Here, the addition concentration of themicroparticles 16b may be gradually lowered from the inner side to the outer side; or the addition concentration may be gradually lowered.

[0259]此外，在第本实施例中，因为例如利用灌封成型法将密封部16形成为外形呈半球状，所以出射光的全反射进一步减低。在此，作为使微粒16b的添加浓度在内侧区域较高而在外侧区域较低的方法，可以举出用硬化前的液状复合材料进行多次灌封成型的方法。就是说，只要以让外侧区域用复合材料中的微粒16b添加比例低于内侧区域用复合材料的添加比例的方式进行灌封成型就可以。这时，也可以是这样的，选出折射率低于第一次灌封成型的微粒16b的折射率的、由无机材料构成的其他微粒作为第二次以后的灌封成型的微粒16b。之后，能够通过硬化使所述液状复合材料成为由复合材料构成的密封部16，来形成本实施例的结构。[0259] Furthermore, in the present embodiment, since the sealingportion 16 is formed into a hemispherical shape by, for example, potting molding, the total reflection of outgoing light is further reduced. Here, as a method of making the addition concentration of themicroparticles 16b higher in the inner region and lower in the outer region, there may be mentioned a method of performing multiple potting molding with a liquid composite material before hardening. In other words, potting may be performed so that the proportion of thefine particles 16b added in the composite material for the outer region is lower than that of the composite material for the inner region. At this time, other particles made of an inorganic material having a refractive index lower than that of the firstpotted particles 16b may be selected as the second and subsequentpotted particles 16b. Thereafter, the structure of this embodiment can be formed by curing the liquid composite material to form the sealingportion 16 made of the composite material.

[0260]此外，因为在第九实施例中，利用灌封成型法将密封部16形成为外形呈半球状，所以出射光的全反射进一步减低。[0260] Furthermore, since in the ninth embodiment, the sealingportion 16 is formed into a hemispherical shape by potting molding, the total reflection of outgoing light is further reduced.

[0261]补充说明一下，在此使密封部16包含荧光材料16c。不过，如上所述，在采用磷化镓(GaP)半导体作为LED芯片12而构成的绿光LED装置等的情况下，不需要使密封部16包含荧光材料16c。[0261] As a supplementary note, here, the sealingportion 16 is made to contain thefluorescent material 16c. However, as described above, in the case of a green LED device or the like configured using a gallium phosphide (GaP) semiconductor as theLED chip 12 , it is not necessary to include thefluorescent material 16 c in the sealingportion 16 .

[0262](第九实施例的第一变形例)(First Modification of Ninth Embodiment)

图31，示意地表示为本发明的第九实施例的第一变形例所涉及的半导体发光装置的白光LED装置的剖面结构。FIG. 31 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a first modification of the ninth embodiment of the present invention.

[0263]如图31所示，在第一变形例所涉及的半导体发光装置40F中，将微粒16b的添加浓度向外侧逐渐变低的密封部16的剖面外形设为四角形。[0263] As shown in FIG. 31 , in the semiconductor light emitting device 40F according to the first modification, the cross-sectional outer shape of the sealingportion 16 in which the doping concentration of themicroparticles 16b gradually decreases outward is a quadrangular shape.

[0264]作为形成本变形例所涉及的密封部16中的密封材料16d的方法，可以利用以使密封部16的外侧的微粒16b添加浓度低于密封部16的内侧的微粒16b添加浓度的方式多次进行传递模塑的方法。[0264] As a method of forming the sealingmaterial 16d in the sealingportion 16 according to the present modification, it is possible to utilize a mode in which the concentration of theparticles 16b added on the outside of the sealingportion 16 is lower than the concentration of theparticles 16b added on the inside of the sealingportion 16. A method in which transfer molding is performed multiple times.

[0265](第九实施例的第二变形例)(Second Modification of Ninth Embodiment)

图32，示意地表示为本发明的第九实施例的第二变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 32 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a second modified example of the ninth embodiment of the present invention.

[0266]如图32所示，在第二变形例所涉及的半导体发光装置60E中，LED芯片12利用倒装芯片安装法安装在具有凹部51a的壳体部件51中的凹部51a底面上。[0266] As shown in FIG. 32, in the semiconductorlight emitting device 60E according to the second modified example, theLED chip 12 is mounted on the bottom surface of therecess 51a of thecase member 51 having therecess 51a by flip-chip mounting.

[0267]在此，覆盖LED芯片12的密封部16A的剖面形状为四角形。[0267] Here, the cross-sectional shape of the sealing portion 16A covering theLED chip 12 is a square.

[0268]在本变形例中，在将白色耐热性树脂材料用作壳体部件51的情况，或对壳体部件51的内侧壁面进行了例如利用铝(Al)等金属的沉积等的金属化的情况下，该壳体部件51的内侧壁面起到反射面的作用。而且，因为将壳体部件51的内侧壁面设为从下方向上方变宽的倒锥形，所以除了使微粒16b的添加浓度向外侧逐渐变低来使密封部16具有逐渐变低的折射率差这一结构以外，光提取效率还根据壳体部件51及该壳体部件51的形状提高。[0268] In this modified example, in the case where a white heat-resistant resin material is used as thecase member 51, or the inner side wall surface of thecase member 51 is deposited with a metal such as aluminum (Al) or the like. In the case of magnification, the inner wall surface of thehousing member 51 functions as a reflection surface. Furthermore, since the inner wall surface of thehousing member 51 is formed into an inverted tapered shape that widens from the bottom to the top, the sealingportion 16 has a gradually lower refractive index difference in addition to making the concentration of theparticles 16b gradually lower toward the outside. In addition to this structure, the light extraction efficiency is also improved by thecase member 51 and the shape of thecase member 51 .

[0269]补充说明一下，能够通过进行多次灌封成型来形成本变形例所涉及的密封部16。[0269] As a supplementary note, the sealingportion 16 according to this modification can be formed by performing potting molding multiple times.

[0270]在本变形例中，也可以采用下述结构，即：如在第七实施例的第五变形例中说明的那样，LED芯片12通过副安装部件53利用倒装芯片安装法安装在具有凹部51a的壳体部件51中的凹部51a底面上的结构。[0270] In this modified example, the following structure may also be adopted, that is, as explained in the fifth modified example of the seventh embodiment, theLED chip 12 is mounted on A structure on the bottom surface of therecess 51 a in thecase member 51 having therecess 51 a.

[0271](第十实施例)(tenth embodiment)

图33，示意地表示为本发明的第十实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图6及图10所示的结构因素相同的结构因素，来省略这些结构因素的说明。Fig. 33 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a tenth embodiment of the present invention. Here, the same components as those shown in FIG. 6 and FIG. 10 are denoted by the same symbols, and descriptions of these components are omitted.

[0272]如图33所示，与第六实施例一样，在第十实施例所涉及的半导体发光装置30G中，LED芯片12以让LED芯片12的背面与衬底31的主面相向的、所谓的接合点在上侧(junction-up)的方式(朝上安装)安装在印刷布线衬底上，该印刷布线衬底包括衬底31，还至少包括选择性地形成在该衬底31的主面及背面的第一布线32A和第二布线32B。[0272] As shown in FIG. 33, as in the sixth embodiment, in the semiconductorlight emitting device 30G according to the tenth embodiment, theLED chip 12 is arranged so that the back surface of theLED chip 12 faces the main surface of thesubstrate 31, The so-called junction-up (junction-up) manner (upward mounting) is mounted on the printed wiring substrate, the printed wiring substrate includes asubstrate 31, and at least includes Thefirst wiring 32A and thesecond wiring 32B on the main surface and the back surface.

[0273]密封部26由第一密封部26A和第二密封部26B构成，该第一密封部26A以半球状直接覆盖半导体发光装置芯片12；该第二密封部26B以半球状直接覆盖该第一密封部26A。[0273] The sealingportion 26 is composed of afirst sealing portion 26A and asecond sealing portion 26B. Thefirst sealing portion 26A directly covers the semiconductor light emittingdevice chip 12 in a hemispherical shape; thesecond sealing portion 26B directly covers the second sealing portion in a hemispherical shape. A sealingportion 26A.

[0274]第一密封部26A，由混合有荧光材料16c的树脂材料构成；第二密封部26B，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。Thefirst sealing part 26A is made of a resin material mixed with afluorescent material 16c; thesecond sealing part 26B is made of a sealingmaterial 16d made of a composite material comprising amatrix material 16a and aparticle 16b, and theparticle 16b is made of Inorganic materials are uniformly dispersed inside thebase material 16a.

[0275]图34，表示采用直径在3nm到10nm的氧化锆(ZrO₂)作为添加于第二密封部26B中的微粒16b并将该微粒16b相对基体材料16a的体积百分比设为30％的情况下的、光的波长与透光率之间的关系。由图34可见，透光率在波长短的一侧大幅度减小。在此，将该现象称为过滤效应。[0275] FIG. 34 shows a situation in which diameters of zirconia (ZrO₂ ) from 3nm to 10nm are used as theparticles 16b added to thesecond sealing portion 26B and the volume percentage of theparticles 16b relative to thebase material 16a is set to 30%. Below, the relationship between the wavelength of light and light transmittance. It can be seen from Fig. 34 that the light transmittance is greatly reduced on the shorter wavelength side. Here, this phenomenon is called a filter effect.

[0276]根据第十实施例所涉及的半导体发光装置30G，能够得到与第一实施例一样的效果，而且由于所述过滤效应，红光区的光谱成分如图35所示相对地增大。就是说，在LED芯片12所放射的放射光和荧光材料16c所激发出的合成光中，由于微粒16b的存在而发生的散射，蓝光区到紫外光区的光谱成分衰减，红光区的光谱成分相对地增大。在此，在测量时使用的半导体发光装置中，采用了图23所示的、将LED芯片12安装在壳体部件51中的结构。LED芯片12的放射光是峰值波长为460nm的蓝光，荧光材料16c的激发光是峰值波长为575nm的黄光。在此，荧光材料16c，是对峰值波长为590nm的橙光用荧光材料和峰值波长为535nm的绿光用荧光材料进行调配而成的。[0276] According to the semiconductorlight emitting device 30G according to the tenth embodiment, the same effect as that of the first embodiment can be obtained, and due to the filtering effect, the spectral components in the red light region are relatively increased as shown in FIG. 35 . That is to say, in the radiated light emitted by theLED chip 12 and the synthesized light excited by thefluorescent material 16c, due to the scattering caused by the existence of theparticles 16b, the spectral components from the blue light region to the ultraviolet light region are attenuated, and the spectrum components in the red light region are attenuated. components increase relatively. Here, in the semiconductor light emitting device used for the measurement, the structure in which theLED chip 12 is mounted in thecase member 51 shown in FIG. 23 was adopted. The emitted light of theLED chip 12 is blue light with a peak wavelength of 460 nm, and the excitation light of thefluorescent material 16 c is yellow light with a peak wavelength of 575 nm. Here, thefluorescent material 16c is prepared by mixing a fluorescent material for orange light with a peak wavelength of 590 nm and a fluorescent material for green light with a peak wavelength of 535 nm.

[0277]这样，平均演色性指数Ra就升高，色温下降，如[图表2]所示。在此，平均演色性指数Ra很高，意味着被某个光源照的东西的彩色再现性很优良。色温很低，意味着光源呈暖色。[0277] Thus, the average color rendering index Ra increases, and the color temperature decreases, as shown in [Graph 2]. Here, the high average color rendering index Ra means that the color reproducibility of a thing illuminated by a certain light source is excellent. A very low color temperature means that the light source appears warm.

[0278][图表2][Graph 2]

   比较例Comparative example   本发明1Thepresent invention 1   本发明2Thepresent invention 2   厚度 thickness    无 none    0.2mm0.2mm    1mm1mm   色温color temperature    4400K4400K    4400K4400K    3900K3900K   RaRa    7474    7676    7474

[0279]在此，比较例表示未设置第二密封部26B的结构的情况；本发明1表示包含微粒16b的第二密封部26B的厚度为0.2mm的情况；本发明2表示第二密封部26B的厚度为1mm的情况。[0279] Here, the comparative example represents the situation in which the structure of thesecond sealing portion 26B is not provided; thepresent invention 1 represents the situation in which the thickness of thesecond sealing portion 26B including theparticles 16b is 0.2 mm; thepresent invention 2 represents the second sealing portion The case where the thickness of 26B is 1 mm.

[0280]由图表2可见，与比较例相比，本发明1的情况下的平均演色性指数更高；本发明2的情况下的色温比比较例低400K。在此，色温的duv(色度坐标上的从黑体曲线算起的差)值在±0.002。As can be seen fromchart 2, compared with the comparative example, the average color rendering index under the situation of thepresent invention 1 is higher; the color temperature under the situation of thepresent invention 2 is 400K lower than the comparative example. Here, the duv (difference from the blackbody curve on the chromaticity coordinates) value of the color temperature is ±0.002.

[0281]补充说明一下，也可以设为下述结构作为第十实施例的第一变形例，即：将能够得到绿光或黄光的荧光材料分别添加在第一密封部26A和第二密封部26B中。通过该做法，由于添加在第二密封部26B中的微粒16b的影响，合成光中的蓝光区到紫外光区的光谱成分也大幅度衰减，红光区的光谱成分相对地增大。[0281] As a supplementary explanation, the following structure can also be set as the first modified example of the tenth embodiment, that is, fluorescent materials that can obtain green light or yellow light are respectively added to thefirst sealing portion 26A and thesecond sealing portion 26A.Section 26B. In this way, due to the influence of theparticles 16b added in thesecond sealing portion 26B, the spectral components of the synthesized light from the blue to ultraviolet regions are also greatly attenuated, and the spectral components of the red region are relatively increased.

[0282]也可以设为下述结构作为第二变形例，即：将能够得到绿光或黄光的第一荧光材料添加在第一密封部26A中，将微粒16b和能够得到红光的第二荧光材料添加在第二密封部26B中。这样，红光用第二荧光材料就吸收来自第一荧光材料的绿光或黄光，红光被激发，因而红光区的光谱成分进一步增大。这样，平均演色性指数Ra就进一步升高，色温进一步下降。[0282] It is also possible to make the following structure as a second modified example, that is, the first fluorescent material that can obtain green light or yellow light is added in thefirst sealing portion 26A, and theparticles 16b and the first fluorescent material that can obtain red light Two fluorescent materials are added in thesecond sealing part 26B. In this way, the second fluorescent material for red light absorbs the green light or yellow light from the first fluorescent material, and the red light is excited, thus further increasing the spectral components in the red light region. In this way, the average color rendering index Ra is further increased, and the color temperature is further decreased.

[0283]也可以设为下述结构作为第三变形例，即：将能够得到红光的第一荧光材料添加在第一密封部26A中，将微粒16b和能够得到绿光或黄光的第二荧光材料添加在第二密封部26B中。这样，红光用第一荧光材料就不吸收第二荧光材料的发光光即绿光或黄光。因此，LED芯片12所放射的放射光的变换效率就提高。Also can be made as following structure as the 3rd modified example, namely: the first fluorescent material that can obtain red light is added in thefirst sealing portion 26A, theparticle 16b and the first fluorescent material that can obtain green light or yellow light Two fluorescent materials are added in thesecond sealing part 26B. In this way, the first fluorescent material for red light does not absorb the green light or yellow light emitted by the second fluorescent material. Therefore, the conversion efficiency of the radiated light emitted by theLED chip 12 is improved.

[0284]最好是这样的，在第十实施例及各个变形例中，与第六实施例一样，使第一密封部26A的折射率小于LED芯片的折射率，使第二密封部26B的折射率小于第一密封部26A的折射率。这样，光提取效率就提高。[0284] Preferably, in the tenth embodiment and each modified example, as in the sixth embodiment, the refractive index of thefirst sealing portion 26A is made smaller than that of the LED chip, and the refractive index of thesecond sealing portion 26B is The refractive index is smaller than that of thefirst sealing portion 26A. Thus, the light extraction efficiency is improved.

[0285]补充说明一下，在LED芯片12的放射光的波长不是在于蓝光区，而是在于410nm以下的蓝紫光区到380nm以下的紫外光区的情况下，通过除了绿光用及红光用、或黄光用的各种荧光材料以外还将蓝光用荧光材料至少添加在第一密封部26A中，能够得到白色合成光。[0285] It should be added that the wavelength of the radiated light of theLED chip 12 is not in the blue light region, but in the case of the blue-violet light region below 410nm to the ultraviolet light region below 380nm. , or various fluorescent materials for yellow light, by adding a fluorescent material for blue light at least in thefirst sealing portion 26A, and white synthetic light can be obtained.

[0286]半导体发光装置30G的外形和安装LED芯片12的方法并不限于图33所示的样子，也可以设为与第二实施例、第六实施例的第一到第五变形例或者第七实施例的第一到第六变形例一样的结构。[0286] The shape of the semiconductorlight emitting device 30G and the method of mounting the LED chips 12 are not limited to those shown in FIG. The structures of the first to sixth modification examples of the seventh embodiment are the same.

[0287](第十实施例的第四变形例)(Fourth modified example of the tenth embodiment)

图36，示意地表示为本发明的第十实施例的第四变形例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图8及图14所示的结构因素相同的结构因素，来省略这些结构因素的说明。Fig. 36 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fourth modified example of the tenth embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 8 and FIG. 14 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0288]如图36所示，与第五实施例一样，在第四变形例所涉及的半导体发光装置50F中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0288] As shown in FIG. 36, as in the fifth embodiment, in the semiconductorlight emitting device 50F according to the fourth modification, theLED chip 12 is fixed in thecase member 51 having theconcave portion 51a by the upward mounting method. on the bottom surface of theconcave portion 51a.

[0289]第一密封部26A由混合有荧光材料16c的树脂材料构成。第二密封部26B，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。[0289] Thefirst sealing portion 26A is made of a resin material mixed with thefluorescent material 16c. Thesecond sealing portion 26B is composed of a sealingmaterial 16d composed of a composite material including abase material 16a andfine particles 16b made of an inorganic material uniformly dispersed in thebase material 16a.

[0290]在第四变形例中，第一密封部26A形成为与LED芯片12接触并覆盖该LED芯片12的周围；第二密封部26B以与壳体51的底面平行的方式设置在壳体51的上端面上。因此，在第二密封部26B与第一密封部26A之间形成有空隙部51b。[0290] In the fourth modified example, thefirst sealing portion 26A is formed in contact with theLED chip 12 and covers the periphery of theLED chip 12; 51 on the upper end face. Therefore, agap portion 51b is formed between thesecond seal portion 26B and thefirst seal portion 26A.

[0291]再加上，在空隙部51b中形成有覆盖第一密封部26A的第一透镜70，在第二密封部26B上形成有覆盖该第二密封部26B的第二透镜部71。在此，作为第一透镜70及第二透镜71，例如可以采用硅树脂、环氧树脂、烯烃树脂、丙烯树脂、尿素树脂、亚胺树脂、聚碳酸脂树脂或玻璃等等。补充说明一下，并不一定需要设置第二透镜71。[0291] In addition, thefirst lens 70 covering thefirst sealing portion 26A is formed in thecavity portion 51b, and thesecond lens portion 71 covering thesecond sealing portion 26B is formed on thesecond sealing portion 26B. Here, as thefirst lens 70 and thesecond lens 71 , for example, silicone resin, epoxy resin, olefin resin, acrylic resin, urea resin, imide resin, polycarbonate resin, or glass can be used. It should be added that thesecond lens 71 does not necessarily need to be provided.

[0292]如上所述，根据本变形例，半导体发光装置即使具有在第一密封部26A与第二密封部26B之间设有空隙部51b的结构，由于过滤效应，也能够得到第十实施例中的、平均演色性指数增大并且色温下降的效果。[0292] As described above, according to this modified example, even if the semiconductor light emitting device has a structure in which thegap 51b is provided between thefirst sealing portion 26A and thesecond sealing portion 26B, due to the filtering effect, the tenth embodiment can be obtained. Medium, the effect of increasing the average color rendering index and decreasing the color temperature.

[0293]可以利用灌封成型法作为本变形例所涉及的各个透镜70、71的形成方法。第二密封部26B是能通过事先形成为板状，再将该板状物固定在壳体51的上端面上来形成的。[0293] A potting molding method can be used as a method of forming thelenses 70 and 71 according to this modification. Thesecond sealing portion 26B can be formed by forming a plate shape in advance, and then fixing the plate shape to the upper end surface of thehousing 51 .

[0294](第十实施例的第五变形例)(Fifth modification of the tenth embodiment)

图37，示意地表示为本发明的第十实施例的第五变形例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图8及图14所示的结构因素相同的结构因素，来省略这些结构因素的说明。Fig. 37 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fifth modified example of the tenth embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 8 and FIG. 14 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0295]如图37所示，与第五实施例一样，在第十实施例的第五变形例所涉及的半导体发光装置50G中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0295] As shown in FIG. 37, like the fifth embodiment, in the semiconductorlight emitting device 50G according to the fifth modified example of the tenth embodiment, theLED chip 12 is fixed on the semiconductorlight emitting device 50G having theconcave portion 51a by the upward mounting method. The bottom surface of therecess 51 a in thehousing member 51 .

[0296]第一密封部26A由混合有荧光材料16c的树脂材料构成；第二密封部26B，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。Thefirst sealing part 26A is made of the resin material that is mixed withfluorescent material 16c; Thesecond sealing part 26B is made of the sealingmaterial 16d that comprises the composite material ofmatrix material 16a andmicroparticle 16b, and describedmicroparticle 16b is made of inorganic The material constituted has been uniformly dispersed inside thematrix material 16a.

[0297]在第五变形例中，第一密封部26A形成为与LED芯片12接触并覆盖该LED芯片12的周围；第二密封部26B以保留壳体51的凹部51a的上部的方式填充在该壳体51的凹部51a中。在凹部51a的上部形成有空隙部51b。[0297] In the fifth modified example, thefirst sealing portion 26A is formed in contact with theLED chip 12 and covers the periphery of theLED chip 12; In therecess 51a of thehousing 51. Avoid portion 51b is formed on the upper portion of the recessedportion 51a.

[0298]再加上，在壳体51的上端面上以覆盖空隙部51b的方式形成有透镜70。[0298] In addition, alens 70 is formed on the upper end surface of thehousing 51 so as to cover thecavity 51b.

[0299]补充说明一下，在第一密封部26A具有透镜功能的情况下，并不一定需要设置透镜70。[0299] As a supplementary note, when thefirst sealing portion 26A has a lens function, thelens 70 does not necessarily need to be provided.

[0300]如上所述，根据本变形例，半导体发光装置即使具有在第二密封部26B与透镜70之间设有空隙部51b的结构，由于过滤效应，也能够得到第十实施例中的、平均演色性指数增大并且色温下降的效果。[0300] As described above, according to this modified example, even if the semiconductor light emitting device has a structure in which thegap portion 51b is provided between thesecond sealing portion 26B and thelens 70, due to the filtering effect, it is possible to obtain the The effect of increasing the average color rendering index and decreasing the color temperature.

[0301]补充说明一下，本变形例所涉及的透镜70，是能通过事先用成型模等进行成型，再将该成型物固定在壳体51的上端面上来形成的。[0301] It should be added that thelens 70 according to this modified example can be formed by molding in advance with a molding die or the like, and then fixing the molded object on the upper end surface of thehousing 51.

[0302](第十实施例的第六变形例)(Sixth modified example of the tenth embodiment)

图38，示意地表示为本发明的第十实施例的第六变形例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图8及图37所示的结构因素相同的结构因素，来省略这些结构因素的说明。Fig. 38 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a sixth modification of the tenth embodiment of the present invention. Here, the same components as those shown in FIG. 8 and FIG. 37 are denoted by the same symbols, and descriptions of these components are omitted.

[0303]如图38所示，第十实施例的第六变形例所涉及的半导体发光装置80包括反射器81，该反射器81例如由液晶聚合物等耐热性树脂材料构成，在上端部分上至少固定有第一引线52A及第二引线52B，在内部具有呈凹状即呈半球面状或抛物面状的反射部81a，兼作壳体。补充说明一下，若考虑到对可见光进行的反射，就最好用白色耐热性树脂材料作为该反射器81，或者用铝等金属对反射部81a进行金属化。[0303] As shown in FIG. 38 , the semiconductorlight emitting device 80 according to the sixth modified example of the tenth embodiment includes areflector 81, which is made of a heat-resistant resin material such as liquid crystal polymer, and has areflector 81 at the upper end. At least thefirst lead wire 52A and thesecond lead wire 52B are fixed on the top, and there is a concave reflectingpart 81a inside, that is, a hemispherical or parabolic shape, which doubles as a housing. In addition, in consideration of reflection of visible light, it is preferable to use a white heat-resistant resin material as thereflector 81, or to metallize thereflection portion 81a with metal such as aluminum.

[0304]LED芯片12，利用朝上安装法被固定在第一引线52A的下表面上。就是说，LED芯片12被安装，使得LED芯片12的上表面与反射部81a的底部相向。[0304] TheLED chip 12 is fixed on the lower surface of thefirst lead 52A by the upward mounting method. That is, theLED chip 12 is mounted such that the upper surface of theLED chip 12 faces the bottom of thereflective portion 81a.

[0305]在反射部81a的反射面上形成有由混合有荧光材料16c的树脂材料构成的荧光体层27，在荧光体层27与LED芯片12之间形成有空隙部81b。在反射器81的上端面上，以覆盖包括各条引线52A、52B在内的空隙部81b的方式形成有密封部16。密封部16，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。[0305] Aphosphor layer 27 made of a resin material mixed with aphosphor material 16c is formed on the reflective surface of thereflective portion 81a, and agap 81b is formed between thephosphor layer 27 and theLED chip 12. On the upper end surface of thereflector 81 , the sealingportion 16 is formed so as to cover thecavity portion 81 b including therespective lead wires 52A, 52B. The sealingportion 16 is composed of a sealingmaterial 16d composed of a composite material including abase material 16a andfine particles 16b made of an inorganic material uniformly dispersed in thebase material 16a.

[0306]在密封部16上形成有透镜70。不过，并不一定需要设置透镜70。[0306] Alens 70 is formed on the sealingportion 16. However, thelens 70 does not necessarily need to be provided.

[0307]如上所述，半导体发光装置即使具有将LED芯片12设置在反射器81中的反射部81a的焦点附近的结构，也能够得到本发明的效果。[0307] As described above, even if the semiconductor light emitting device has a structure in which theLED chip 12 is provided near the focal point of thereflector 81a of thereflector 81, the effect of the present invention can be obtained.

[0308]补充说明一下，也可以将密封用树脂材料填充于反射器81的空隙部81b中，进而也可以将组成与密封部16相同的复合材料或折射率不同的复合材料填充于反射器81的空隙部81b中。[0308] As a supplementary explanation, the sealing resin material may also be filled in thevoid portion 81b of thereflector 81, and thereflector 81 may also be filled with a composite material having the same composition as that of the sealingportion 16 or a composite material having a different refractive index. In thevoid portion 81b.

[0309](第十一实施例)(Eleventh embodiment)

图39，示意地表示为本发明的第十一实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图8及图14所示的结构因素相同的结构因素，来省略这些结构因素的说明。Fig. 39 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to an eleventh embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 8 and FIG. 14 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0310]如图39所示，与第五实施例一样，在第十一实施例所涉及的半导体发光装置50H中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0310] As shown in FIG. 39, like the fifth embodiment, in the semiconductorlight emitting device 50H according to the eleventh embodiment, theLED chip 12 is fixed to thecase member 51 having theconcave portion 51a by the upward mounting method. On the bottom surface of theconcave portion 51a.

[0311]用白色耐热性树脂材料作为壳体部件51，或者对壳体部件51的凹部51a的内侧壁面上及底面上进行例如利用铝(Al)等金属的沉积等的金属化，来使该壳体部件51的内表面起到反射面的作用。[0311] Use a white heat-resistant resin material as thecase member 51, or carry out metallization such as metallization using metal deposition such as aluminum (Al) on the inner side wall surface and the bottom surface of theconcave portion 51a of thecase member 51, to make The inner surface of thecase member 51 functions as a reflective surface.

[0312]密封部26由第一密封部26A和第二密封部26B构成，该第一密封部26A直接覆盖LED芯片12，被填充于壳体部件51的凹部51a的下部；该第二密封部26B形成在该第一密封部26A上，呈层状。[0312] The sealingportion 26 is composed of afirst sealing portion 26A and asecond sealing portion 26B. Thefirst sealing portion 26A directly covers theLED chip 12 and is filled in the lower part of therecess 51a of thecase member 51; thesecond sealing portion 26B is formed on thefirst sealing portion 26A in a layered shape.

[0313]第一密封部26A，由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部；第二密封部26B由混合有荧光材料16c的树脂材料构成。Thefirst sealing portion 26A is made of a sealingmaterial 16d made of a composite material comprising amatrix material 16a and aparticle 16b. Theparticle 16b is made of an inorganic material and has been uniformly dispersed in thematrix material 16a; the second Thesecond sealing portion 26B is made of a resin material mixed with thefluorescent material 16c.

[0314]根据所述结构，由添加在第二密封部26B中的荧光材料16c反射的、来自LED芯片12的放射光的一部分及来自荧光材料16c的发光光的一部分在壳体部件51中的凹部51a的内侧壁面或底面、与第一密封部26A之间的界面进行反射，再次透过第一密封部26A。[0314] According to the above structure, part of the radiated light from theLED chip 12 and part of the emitted light from thefluorescent material 16c reflected by thefluorescent material 16c added to thesecond sealing portion 26B are reflected in thecase member 51. The inner wall surface or the bottom surface of theconcave portion 51a, and the interface between thefirst sealing portion 26A reflect and transmit through thefirst sealing portion 26A again.

[0315]根据第十一实施例所涉及的半导体发光装置50H，能够得到与第一实施例一样的效果，而且由于所述蓝光区到紫外光区的合成光衰减的过滤效应，红光区的光谱成分相对地增大。这样，平均演色性指数就升高，色温下降。[0315] According to the semiconductor light-emittingdevice 50H involved in the eleventh embodiment, the same effect as that of the first embodiment can be obtained, and due to the filter effect of synthetic light attenuation from the blue light region to the ultraviolet light region, the red light region Spectral components are relatively increased. In this way, the average color rendering index increases and the color temperature decreases.

[0316]补充说明一下，也可以这样设定作为第十一实施例的第一变形例，即：在LED芯片12的放射光是蓝光的情况下，将能够得到绿光或黄光的荧光材料分别添加在第一密封部26A和第二密封部26B中。这样，就通过添加在第一密封部26A中的微粒16b使合成光中的蓝光区到紫外光区的光谱成分衰减，红光区的光谱成分还是相对地增大。[0316] As a supplementary note, it is also possible to set as the first modified example of the eleventh embodiment in this way, that is, when the radiated light of theLED chip 12 is blue light, a fluorescent material that can obtain green light or yellow light Added in thefirst seal portion 26A and thesecond seal portion 26B, respectively. In this way, the spectral components in the blue light region to the ultraviolet light region in the synthesized light are attenuated by theparticles 16b added in thefirst sealing portion 26A, and the spectral components in the red light region are relatively increased.

[0317]也可以这样设定作为第二变形例，即：将微粒16b和能够得到绿光或黄光的第一荧光材料添加在第一密封部26A中，将能够得到红光的第二荧光材料添加在第二密封部26B中。这样，红光用第二荧光材料就吸收来自第一荧光材料的绿光或黄光，红光被激发，因而红光区的光谱成分进一步增大。这样，平均演色性指数就进一步升高，色温进一步下降。[0317] It may also be set as a second modified example, that is, theparticles 16b and the first fluorescent material capable of obtaining green or yellow light are added to thefirst sealing portion 26A, and the second fluorescent material capable of obtaining red light is added to thefirst sealing portion 26A. Material is added in thesecond seal portion 26B. In this way, the second fluorescent material for red light absorbs the green light or yellow light from the first fluorescent material, and the red light is excited, thus further increasing the spectral components in the red light region. In this way, the average color rendering index is further increased, and the color temperature is further decreased.

[0318]也可以这样设定作为第三变形例，即：将微粒16b和能够得到红光的第一荧光材料添加在第一密封部26A中，将能够得到绿光或黄光的第二荧光材料添加在第二密封部26B中。这样，红光用第一荧光材料就不吸收第二荧光材料的发光光即绿光或黄光。因此，LED芯片12所放射的放射光的变换效率提高。[0318] It can also be set as a third modified example, that is, theparticles 16b and the first fluorescent material capable of obtaining red light are added to thefirst sealing portion 26A, and the second fluorescent material capable of obtaining green light or yellow light Material is added in thesecond seal portion 26B. In this way, the first fluorescent material for red light does not absorb the green light or yellow light emitted by the second fluorescent material. Therefore, the conversion efficiency of the radiated light emitted by theLED chip 12 is improved.

[0319]最好是这样的，第十一实施例和各个变形例中，与第六实施例一样地使第一密封部26A的折射率小于LED芯片12的折射率，使第二密封部26B的折射率小于第一密封部26A的折射率。这样，光提取效率就提高。[0319] Preferably, in the eleventh embodiment and each modified example, the refractive index of thefirst sealing portion 26A is made smaller than the refractive index of theLED chip 12 as in the sixth embodiment, and thesecond sealing portion 26B is The refractive index is smaller than the refractive index of thefirst sealing portion 26A. Thus, the light extraction efficiency is improved.

[0320]半导体发光装置50H的外形和安装LED芯片12的方法并不被限定于图39所示的样子，也可以设为与第二实施例、第六实施例、第六实施例的第一到第五变形例、第七实施例或者第七实施例的第一到第六变形例一样的结构。[0320] The shape of the semiconductorlight emitting device 50H and the method of mounting the LED chips 12 are not limited to those shown in FIG. The structure is the same as that of the fifth modified example, the seventh embodiment, or the first to sixth modified examples of the seventh embodiment.

[0321](第十一实施例的第四变形例)(Fourth modified example of the eleventh embodiment)

图40，示意地表示为本发明的第十一实施例的第四变形例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图8及图14所示的结构因素相同的结构因素，来省略这些结构因素的说明。FIG. 40 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fourth modified example of the eleventh embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 8 and FIG. 14 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0322]如图40所示，在第四变形例所涉及的半导体发光装置50I中，密封部26由第一密封部26A和第二密封部26B构成，该第一密封部26A形成在LED芯片12的下侧作为底层；该第二密封部26B以覆盖LED芯片12的方式形成在该第一密封部26A上，填充壳体部件51的凹部51a。[0322] As shown in FIG. 40, in the semiconductorlight emitting device 50I according to the fourth modified example, the sealingportion 26 is composed of afirst sealing portion 26A and asecond sealing portion 26B, and thefirst sealing portion 26A is formed on the LED chip. 12 serves as the bottom layer; thesecond sealing portion 26B is formed on thefirst sealing portion 26A to cover theLED chip 12 , and fills therecess 51 a of thecase member 51 .

[0323]具体而言，第一密封部26A形成在壳体部件51的底面上。LED芯片12利用朝上安装法在第一密封部26A的上方被固定在对可见光透明的芯片固定用糊状材料13上。用白色耐热性树脂材料作为壳体部件51，进而对壳体部件51的凹部51a的底面上及内侧壁面上进行例如利用铝(Al)等金属的沉积等的金属化，使该壳体部件51的内侧壁面起到反射面的作用。[0323] Specifically, thefirst seal portion 26A is formed on the bottom surface of thecase member 51. TheLED chip 12 is fixed on the chip fixingpaste material 13 transparent to visible light above thefirst sealing portion 26A by the face-up mounting method. Use a white heat-resistant resin material as thecase member 51, and further metallize the bottom surface and the inner side wall surface of theconcave portion 51a of thecase member 51 by depositing metal such as aluminum (Al) to make the case member The inner wall surface of 51 functions as a reflective surface.

[0324]第一密封部26A由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部；第二密封部26B由混合有荧光材料16c的树脂材料构成。Thefirst sealing part 26A is made of the sealingmaterial 16d that comprises the composite material ofmatrix material 16a andmicroparticle 16b, and describedmicroparticle 16b is made of inorganic material, has been dispersed in the inside of thismatrix material 16a evenly; The second The sealingportion 26B is made of a resin material mixed with thefluorescent material 16c.

[0325]根据所述结构，由添加在第二密封部26B中的荧光材料16c反射的、来自LED芯片12的放射光的一部分及来自荧光材料16c的激发光的一部分在壳体部件51的凹部51a与第一密封部26A之间的界面进行反射，再次透过第一密封部26A。其结果是，由于所述过滤效应，红光区的光谱成分相对地增大。因此，平均演色性指数升高，色温下降。[0325] According to the above structure, part of the radiated light from theLED chip 12 and part of the excitation light from thefluorescent material 16c reflected by thefluorescent material 16c added to thesecond sealing portion 26B are reflected in the concave portion of thecase member 51. 51a and the interface between thefirst sealing portion 26A, and then transmits through thefirst sealing portion 26A again. As a result, due to the filtering effect, the spectral content of the red region is relatively increased. Therefore, the average color rendering index increases and the color temperature decreases.

[0326]而且，因为在LED芯片12的底层即第一密封部26A中添加有微粒16b，所以LED芯片12的放热性提高。[0326] Furthermore, since themicroparticles 16b are added to thefirst sealing portion 26A, which is the bottom layer of theLED chip 12, the heat dissipation of theLED chip 12 is improved.

[0327]因为用透明的糊状材料作为芯片固定用糊状材料13，并且已经用金属对壳体部件51的凹部51a的底面上进行了金属化，所以光提取效率提高。[0327] Since a transparent paste material is used as the chip-fixingpaste material 13, and the bottom surface of therecess 51a of thecase member 51 has been metallized with metal, the light extraction efficiency is improved.

[0328]补充说明一下，也可以是这样的，还对第二密封部26B添加微粒，来使该第二密封部26B成为复合材料。在该情况下，最好选出使第二密封部26B的折射率小于第一密封部26A的折射率的微粒。[0328] As a supplementary note, it is also possible to add particles to thesecond sealing portion 26B to make thesecond sealing portion 26B a composite material. In this case, it is preferable to select particles whose refractive index of thesecond sealing portion 26B is smaller than that of thefirst sealing portion 26A.

[0329](第十一实施例的第五变形例)(Fifth modified example of the eleventh embodiment)

图41，示意地表示为本发明的第十一实施例的第五变形例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号表示与图38所示的结构因素相同的结构因素，来省略这些结构因素的说明。Fig. 41 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a fifth modified example of the eleventh embodiment of the present invention. Here, the same components as those shown in FIG. 38 are denoted by the same symbols, and descriptions of these components are omitted.

[0330]如图41所示，第十一实施例的第五变形例所涉及的半导体发光装置80A包括反射器81，该反射器81例如由液晶聚合物等耐热性树脂材料构成，在上端部分上至少固定有第一引线52A及第二引线52B，在内部具有呈凹状即呈半球面状或抛物面状的反射部81a，兼作壳体。补充说明一下，最好用白色耐热性树脂材料作为该反射器81，或者用铝等金属对反射部81a进行金属化。[0330] As shown in FIG. 41, a semiconductorlight emitting device 80A according to a fifth modified example of the eleventh embodiment includes areflector 81 made of, for example, a heat-resistant resin material such as liquid crystal polymer. Partly at least thefirst lead wire 52A and thesecond lead wire 52B are fixed, and there is a concave reflectingportion 81a inside, that is, a hemispherical or parabolic shape, which doubles as a casing. In addition, it is preferable to use a white heat-resistant resin material as thereflector 81, or to metallize thereflector 81a with metal such as aluminum.

[0331]LED芯片12，利用朝上安装法被固定在第一引线52A的下表面上。就是说，LED芯片12被安装，使得LED芯片12的上表面与反射部81a的底部相向。[0331] TheLED chip 12 is fixed on the lower surface of thefirst lead 52A by the upward mounting method. That is, theLED chip 12 is mounted such that the upper surface of theLED chip 12 faces the bottom of thereflective portion 81a.

[0332]在反射部81a的反射面上形成有由混合有荧光材料16c的树脂材料构成的荧光体层27，在荧光体层27与LED芯片12之间填充有密封部16。密封部16由包含基体材料16a及微粒16b的复合材料所构成的密封材料16d构成，所述微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。[0332] Thephosphor layer 27 made of a resin material mixed with thephosphor material 16c is formed on the reflective surface of thereflective portion 81a, and the sealingportion 16 is filled between thephosphor layer 27 and theLED chip 12. The sealingportion 16 is composed of a sealingmaterial 16d made of a composite material including abase material 16a andfine particles 16b made of an inorganic material uniformly dispersed in thebase material 16a.

[0333]在反射器81的上端面上，以覆盖包括各条引线52A、52B在内的空隙部81b的方式形成有透镜70。补充说明一下，并不一定需要设置透镜70。[0333] On the upper end surface of thereflector 81, thelens 70 is formed so as to cover thecavity portion 81b including therespective lead wires 52A, 52B. As an additional note, thelens 70 does not necessarily need to be provided.

[0334]根据所述结构，由添加在荧光体层27中的荧光材料16c反射的、来自LED芯片12的放射光的一部分及来自荧光材料16c的发光光的一部分在反射器81的反射部81a进行反射，再次透过密封部16。其结果是，由于所述过滤效应，红光区的光谱成分相对地增大。因此，平均演色性指数升高，色温下降。[0334] According to the above structure, part of the emitted light from theLED chip 12 and part of the emitted light from thefluorescent material 16c reflected by thefluorescent material 16c added to thefluorescent material layer 27 are reflected on thereflection portion 81a of thereflector 81. It is reflected and transmitted through the sealingportion 16 again. As a result, due to the filtering effect, the spectral content of the red region is relatively increased. Therefore, the average color rendering index increases and the color temperature decreases.

[0335]补充说明一下，也可以设为下述结构，即：如第六实施例那样，将密封部16至少设为具有第一密封部和第二密封部的双层结构，使位于第一密封部的外侧的第二密封部的折射率小于第一密封部的折射率。[0335] As an additional note, it is also possible to make the following structure, that is, as in the sixth embodiment, the sealingportion 16 is at least made into a double-layer structure having a first sealing portion and a second sealing portion, so that the The refractive index of the second sealing portion outside the sealing portion is smaller than the refractive index of the first sealing portion.

[0336](第十二实施例)(twelfth embodiment)

下面，参照附图，对本发明的第十二实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a twelfth embodiment of the present invention will be described with reference to the drawings.

[0337]图42，示意地表示为本发明的第十二实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号也表示与图8及图14所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0337] FIG. 42 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a twelfth embodiment of the present invention. Here, the same constituent elements as those shown in FIG. 8 and FIG. 14 are denoted by the same symbols, and descriptions of these constituent elements are omitted.

[0338]如图42所示，与第五实施例一样，在第十二实施例所涉及的半导体发光装置50J中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0338] As shown in FIG. 42, as in the fifth embodiment, in the semiconductorlight emitting device 50J according to the twelfth embodiment, theLED chip 12 is fixed to thecase member 51 having theconcave portion 51a by the upward mounting method. On the bottom surface of theconcave portion 51a.

[0339]密封部26包括第一密封部26A和第二密封部26B，该第一密封部26A直接覆盖LED芯片12，被填充于壳体部件51的凹部51a的下部；该第二密封部26B隔着第三密封部26C形成在该第一密封部26A上，呈层状。[0339] The sealingportion 26 includes afirst sealing portion 26A and asecond sealing portion 26B. Thefirst sealing portion 26A directly covers theLED chip 12 and is filled in the lower part of therecess 51a of thehousing member 51; thesecond sealing portion 26B The third sealing portion 26C is formed on thefirst sealing portion 26A in a layered form.

[0340]第一密封部26A和第二密封部26B，由包含基体材料16a及第一微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述第一微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。Thefirst sealing portion 26A and thesecond sealing portion 26B are composed of a sealingmaterial 16d made of a composite material comprising abase material 16a andfirst particles 16b, and afluorescent material 16c, and thefirst particles 16b are made of an inorganic material constituted, has been uniformly dispersed inside thebase material 16a.

[0341]第三密封部26C由包含基体材料16a及第二微粒17b的复合材料所构成的密封材料16d构成，所述第二微粒17b由能够吸收紫外光的氧化锌、氧化钛或氧化铈等无机材料构成，已均匀地分散在该基体材料16a的内部。The 3rd sealing part 26c is made of the sealingmaterial 16d that comprises the composite material that comprisesmatrix material 16a and the2nd microparticle 17b, and described2nd microparticle 17b is made of zinc oxide, titanium oxide or cerium oxide etc. that can absorb ultraviolet light Inorganic materials are uniformly dispersed inside thebase material 16a.

[0342]根据第十二实施例所涉及的半导体发光装置50J，能够得到与第一实施例一样的效果，而且在第一密封部26A与第二密封部26B之间设置有作为吸收紫外光的紫外光吸收层的第三密封部26C。因此，含在LED芯片12所放射的放射光中的、紫外光区的光成分被第三密封部26C吸收。其结果是，能够用耐水性及耐热性优良，但是容易因紫外光而变成黄色的环氧树脂作为构成第二密封部26B的基体材料16a。[0342] According to the semiconductor light-emittingdevice 50J according to the twelfth embodiment, the same effect as that of the first embodiment can be obtained, and an ultraviolet light absorber is provided between thefirst sealing portion 26A and thesecond sealing portion 26B. The third sealing portion 26C of the ultraviolet light absorbing layer. Therefore, the light component in the ultraviolet region contained in the radiated light emitted from theLED chip 12 is absorbed by the third sealing portion 26C. As a result, an epoxy resin that is excellent in water resistance and heat resistance but is prone to yellowing due to ultraviolet light can be used as thebase material 16 a constituting thesecond sealing portion 26B.

[0343]补充说明一下，最好将密封部26设为下述结构，即：第二密封部26B的折射率小于第三密封部26C的折射率，并且第三密封部26C的折射率小于第一密封部26A的折射率。[0343] As an additional explanation, it is preferable to configure the sealingportion 26 as follows: the refractive index of thesecond sealing portion 26B is smaller than the refractive index of the third sealing portion 26C, and the refractive index of the third sealing portion 26C is smaller than that of thefirst sealing portion 26B. A refractive index of the sealingportion 26A.

[0344]第一密封部26A和第二密封部26B并不一定需要包含第二微粒17b。荧光材料16c只要含在第一密封部26A和第三密封部26C中的任一个密封部中就可以。但是，在LED芯片12所放射的放射光主要是紫外光的情况下，第一密封部26A需要包含荧光材料16c。[0344] Thefirst sealing portion 26A and thesecond sealing portion 26B do not necessarily need to contain the secondfine particles 17b. Thefluorescent material 16c may be contained in any one of thefirst sealing portion 26A and the third sealing portion 26C. However, when the radiated light emitted by theLED chip 12 is mainly ultraviolet light, thefirst sealing portion 26A needs to include thefluorescent material 16c.

[0345]半导体发光装置50J的外形和安装LED芯片12的方法并不被限定于图43所示的样子，也可以设为与第二实施例、第六实施例、第六实施例的第一到第五变形例、第七实施例或者第七实施例的第一到第六变形例一样的结构。[0345] The shape of the semiconductorlight emitting device 50J and the method of installing theLED chip 12 are not limited to the one shown in FIG. The structure is the same as that of the fifth modified example, the seventh embodiment, or the first to sixth modified examples of the seventh embodiment.

[0346](第十三实施例)(thirteenth embodiment)

下面，参照附图，对本发明的第十三实施例所涉及的半导体发光装置进行说明。Next, a semiconductor light emitting device according to a thirteenth embodiment of the present invention will be described with reference to the drawings.

[0347]图43，示意地表示为本发明的第十三实施例所涉及的半导体发光装置的白光LED装置的剖面结构。在此，用相同的符号表示与图8所示的结构因素相同的结构因素，来省略这些结构因素的说明。[0347] FIG. 43 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a thirteenth embodiment of the present invention. Here, the same components as those shown in FIG. 8 are denoted by the same symbols, and descriptions of these components are omitted.

[0348]如图43所示，与第五实施例一样，在第十三实施例所涉及的半导体发光装置50K中，LED芯片12利用朝上安装法被固定在具有凹部51a的壳体部件51中的凹部51a底面上。[0348] As shown in FIG. 43, as in the fifth embodiment, in the semiconductorlight emitting device 50K related to the thirteenth embodiment, theLED chip 12 is fixed to thecase member 51 having theconcave portion 51a by the upward mounting method. On the bottom surface of theconcave portion 51a.

[0349]密封部26由第一密封部26A和第二密封部26B构成，该第一密封部26A直接覆盖LED芯片12，被填充于壳体部件51的凹部51a中；该第二密封部26B以覆盖第一密封部26A的方式形成在壳体部件51的上表面上。[0349] The sealingportion 26 is composed of afirst sealing portion 26A and asecond sealing portion 26B. Thefirst sealing portion 26A directly covers theLED chip 12 and is filled in therecess 51a of thehousing member 51; thesecond sealing portion 26B It is formed on the upper surface of thecase member 51 so as to cover thefirst seal portion 26A.

[0350]第一密封部26A，由包含基体材料16a及第一微粒16b的复合材料所构成的密封材料16d、和荧光材料16c构成，所述第一微粒16b由无机材料构成，已均匀地分散在该基体材料16a的内部。[0350] Thefirst sealing part 26A is composed of a sealingmaterial 16d made of a composite material comprising thematrix material 16a and thefirst particles 16b, and afluorescent material 16c. Thefirst particles 16b are made of inorganic materials and uniformly dispersed inside thebase material 16a.

[0351]第二密封部26B，由包含基体材料16a及第二微粒17b的复合材料所构成的密封材料16d构成，该第二微粒17b由能够吸收紫外光的氧化锌、氧化钛或氧化铈等无机材料构成，已均匀地分散在该基体材料16a的内部。这样，通过用复合材料作为密封材料16d，就不仅能够得到微粒16b吸收紫外光的效果，紫外光的波长的光由于复合材料的影响而也容易散射。因此，抑制紫外光的透过的效果极高。Thesecond sealing portion 26B is made of a sealingmaterial 16d made of a composite material comprising thebase material 16a and thesecond particle 17b. Thesecond particle 17b is made of zinc oxide, titanium oxide or cerium oxide that can absorb ultraviolet light. Inorganic materials are uniformly dispersed inside thebase material 16a. In this way, by using a composite material as the sealingmaterial 16d, not only the effect of absorbing ultraviolet light by themicroparticles 16b can be obtained, but also light having a wavelength of ultraviolet light is easily scattered due to the influence of the composite material. Therefore, the effect of suppressing the transmission of ultraviolet light is extremely high.

[0352]根据第十三实施例所涉及的半导体发光装置50K，能够得到与第一实施例一样的效果。而且，因为在第一密封部26A上设置有作为吸收紫外光的紫外光吸收层的第二密封部26B，所以含在LED芯片12所放射的放射光中的、紫外光区的光成分被第二密封部26B吸收。其结果是，能够防止该半导体发光装置50K输出不必要的紫外光。[0352] According to the semiconductorlight emitting device 50K according to the thirteenth embodiment, the same effect as that of the first embodiment can be obtained. Moreover, since thesecond sealing portion 26B, which is an ultraviolet light absorbing layer that absorbs ultraviolet light, is provided on thefirst sealing portion 26A, the light component in the ultraviolet region contained in the radiated light emitted by theLED chip 12 is captured by thesecond sealing portion 26A. Thesecond sealing part 26B absorbs. As a result, it is possible to prevent unnecessary output of ultraviolet light from the semiconductorlight emitting device 50K.

[0353]再加上，因为吸收紫外光的第二密封部26B设置在第一密封部26A的外侧，所以还能够防止从外部入射的紫外光所造成的、密封材料16d及荧光材料16c的恶化。[0353] In addition, because thesecond sealing portion 26B that absorbs ultraviolet light is disposed outside thefirst sealing portion 26A, it is also possible to prevent deterioration of the sealingmaterial 16d and thefluorescent material 16c caused by ultraviolet light incident from the outside. .

[0354]补充说明一下，LED芯片12的放射光的波长区并不被限定于从蓝光区到紫外光区为止的区域。因此，半导体发光装置50K不被限定于白光LED装置。[0354] It should be added that the wavelength region of the emitted light from theLED chip 12 is not limited to the region from the blue region to the ultraviolet region. Therefore, the semiconductorlight emitting device 50K is not limited to a white LED device.

[0355]第一密封部26A并不一定需要包含第一微粒16b。[0355] Thefirst sealing portion 26A does not necessarily need to contain thefirst particles 16b.

[0356]半导体发光装置50K的外形和安装LED芯片12的方法并不被限定于图43所示的样子，也可以设为与第一到第四实施例一样的结构。[0356] The appearance of the semiconductorlight emitting device 50K and the method of mounting the LED chips 12 are not limited to those shown in FIG. 43, and may have the same configuration as those of the first to fourth embodiments.

[0357](第十三实施例的一变形例)(A modified example of the thirteenth embodiment)

图44，示意地表示为本发明的第十三实施例的一变形例所涉及的半导体发光装置的白光LED装置的剖面结构。Fig. 44 schematically shows a cross-sectional structure of a white LED device which is a semiconductor light emitting device according to a modified example of the thirteenth embodiment of the present invention.

[0358]如图44所示，在本变形例所涉及的半导体发光装置50L中，包含能够吸收紫外光的第二微粒17的第二密封部26B不仅形成在壳体部件51的上表面上，也形成在该壳体部件51的侧面及底面上，覆盖壳体部件51的整个周围。[0358] As shown in FIG. 44, in the semiconductorlight emitting device 50L according to this modification, thesecond sealing portion 26B including the second particles 17 capable of absorbing ultraviolet light is not only formed on the upper surface of thecase member 51, but also It is also formed on the side and bottom surfaces of thecase member 51 and covers the entire periphery of thecase member 51 .

[0359]根据所述结构，能够得到与第十三实施例一样的效果，还能够提高壳体部件51的放热性。[0359] According to the above configuration, the same effect as that of the thirteenth embodiment can be obtained, and the heat dissipation of thecase member 51 can also be improved.

[0360]作为形成覆盖壳体部件51的周围的第二密封部26B的方法，例如可以利用在形成第一密封部26A后将形成有第一密封部26A的壳体部件51浸在第二微粒17分散着的液状密封材料16d中的浸渍法。[0360] As a method of forming thesecond seal portion 26B covering the periphery of thecase member 51, for example, after thefirst seal portion 26A is formed, thecase member 51 on which thefirst seal portion 26A is formed is immersed in the second particle 17 Immersion method in dispersedliquid sealing material 16d.

[0361]补充说明一下，在第六实施例、第六实施例的第一到第六变形例、第七实施例、第七实施例的第一到第七变形例、第十实施例、第十一实施例、第十一实施例的第一到第四变形例、第十二实施例、第十三实施例及第十三实施例的一变形例中，用相同的材料作为第一密封部26A的基体材料16a和第二密封部26B的基体材料16a。这样，就能够提高密封部相互间的紧贴性，设为不易造成密封部的剥离等的结构。因此，所示结构很适当。密封部相互间的紧贴性，是被基体材料相互间的接合程度左右的程度比较大。而在用复合材料作为密封部的情况下，基体材料的比例较小。于是，使各个密封部的基体材料相同，这样就能够使紧贴性提高。[0361] As a supplementary explanation, in the sixth embodiment, the first to the sixth modification of the sixth embodiment, the seventh embodiment, the first to the seventh modification of the seventh embodiment, the tenth embodiment, the first In the eleventh embodiment, the first to fourth modifications of the eleventh embodiment, the twelfth embodiment, the thirteenth embodiment, and a modification of the thirteenth embodiment, the same material is used as the first seal Thebase material 16a of theportion 26A and thebase material 16a of thesecond sealing portion 26B. In this way, it is possible to improve the adhesion between the sealing parts, and it is possible to obtain a structure that does not easily cause peeling of the sealing parts. Therefore, the structure shown is suitable. The adhesion between the sealing parts is relatively largely determined by the degree of bonding between the base materials. In the case of a composite material as the seal, however, the proportion of the matrix material is relatively small. Therefore, the adhesiveness can be improved by making the base material of each sealing part the same.

[0362]在上述的所有实施例及其变形例中，作为半导体发光装置主要对白光LED装置进行了说明。不过，本发明并不被限定于白光LED装置，本发明对用添加有微粒的密封材料密封LED芯片的半导体发光装置有效。[0362] In all the above-mentioned embodiments and modifications thereof, the white LED device is mainly described as the semiconductor light emitting device. However, the present invention is not limited to white LED devices, and the present invention is effective for semiconductor light emitting devices in which LED chips are sealed with a microparticle-added sealing material.

[0363]补充说明一下，当用复合材料作为密封部时，最好是无论密封部具有单层结构还是多层结构，都设为所发的光的透光量的衰减程度较小的结构。不过，只要根据用途决定密封部的结构就可以，在如第十实施例那样控制演色性的情况、和LED包含紫外光而想去除该紫外光的情况等情况下，用复合材料衰减相应的波长的光。[0363] As a supplementary note, when a composite material is used as the sealing part, it is preferable that the attenuation degree of the transmitted light of the emitted light is small regardless of whether the sealing part has a single-layer structure or a multi-layer structure. However, as long as the structure of the sealing part is determined according to the application, in the case of controlling the color rendering as in the tenth embodiment, or in the case of LEDs containing ultraviolet light and wanting to remove the ultraviolet light, the corresponding wavelength is attenuated with a composite material. of light.

[0364]由于复合材料的影响而发生的瑞利散射的程度根据微粒的尺寸、微粒的混合浓度或密封部厚度的不同而不同，此外根据透过光的波长的不同也不同，特别是具有光的波长越短，散射程度越大这一特征。因此，也会有出现下述情况，即：由于采用的LED芯片的发光波长或复合材料所构成的密封部结构的关系，透过光量受到影响。The degree of Rayleigh scattering due to the influence of the composite material varies according to the size of the particle, the mixing concentration of the particle or the thickness of the sealing part, and also varies according to the wavelength of the transmitted light, especially with light The shorter the wavelength, the greater the degree of scattering. Therefore, there may be cases where the amount of transmitted light is affected by the light emission wavelength of the LED chip used or the structure of the sealing portion made of the composite material.

[0365]在用作密封部的复合材料的根据半导体发光元件的发光波长决定的散射度小于0.3的条件下，所发的光在透过时的衰减量较小，因而光提取效率提高。这时，密封部的透光率中的瑞利散射成分大约小于25％。[0365] Under the condition that the degree of scattering determined by the emission wavelength of the semiconductor light-emitting element of the composite material used as the sealing part is less than 0.3, the attenuation of the emitted light when it passes through is small, thereby improving the light extraction efficiency. In this case, the Rayleigh scattering component in the light transmittance of the sealing portion is less than about 25%.

[0366]更好的是将散射度设为0.2以下。这样，光在透过时的衰减量就更小，因而光提取效率提高。补充说明一下，这时的透光率中的瑞利散射成分约在20％以下。特别是当散射度在0.1以下时，透光率中的瑞利散射成分约在10％以下，其中当散射度在0.05以下时，透光率中的瑞利散射成分在5％左右以下，该复合材料大致是透明的，光在透过时的衰减量不成问题了。[0366] It is more preferable to set the scattering degree to 0.2 or less. In this way, the attenuation of light when it is transmitted is smaller, so that the light extraction efficiency is improved. In addition, the Rayleigh scattering component in the light transmittance at this time is about 20% or less. Especially when the degree of scattering is below 0.1, the Rayleigh scattering component in the light transmittance is below about 10%, and when the degree of scattering is below 0.05, the Rayleigh scattering component in the light transmittance is below about 5%. The composite material is mostly transparent, and the amount of attenuation of light passing through is no longer an issue.

[0367]在此，散射度是以复合材料部分的瑞利散射衰减系数α和该复合材料部分的厚度t的乘积αt表示的值。该散射度的测量方法如下：测量具有规定厚度t的复合材料部分的透光率T(％)，利用该透光率T的值以散射度αt＝-ln(T/100)的算式求出该散射度。在此，ln是自然对数。能够通过除散射度以厚度来求出瑞利散射衰减系数α。瑞利散射衰减系数α，是根据微粒的粒径、折射率或与混合量有关的材料组成而决定的材料参数。通过得知该瑞利散射衰减系数α的值，能够容易地进行密封部厚度等器件光学设计。[0367] Here, the degree of scattering is a value represented by the product αt of the Rayleigh scattering attenuation coefficient α of the composite material part and the thickness t of the composite material part. The method of measuring the degree of scattering is as follows: measure the light transmittance T (%) of the composite material portion having a predetermined thickness t, and use the value of the light transmittance T to obtain it with the formula of degree of scattering αt=-ln(T/100) The degree of scattering. Here, ln is a natural logarithm. The Rayleigh scattering attenuation coefficient α can be obtained by dividing the scattering degree by the thickness. The Rayleigh scattering attenuation coefficient α is a material parameter determined by the particle size, refractive index, or material composition related to the mixing amount of the particles. By knowing the value of the Rayleigh scattering attenuation coefficient α, device optical design such as the thickness of the sealing portion can be easily performed.

[0368]在此，对各种颜色分别举出在第一实施例中所述的、可以利用于本发明的荧光体的其他例子。[0368] Here, other examples of phosphors that can be used in the present invention described in the first embodiment are given for each color.

i.蓝光荧光体i. Blue phosphor

(1)卤磷酸盐(Halophosphate)荧光体：(Sr，Ba)₁₀(PO₄)₆Cl₂:Eu²⁺，Sr₁₀(PO₄)₆Cl₂:Eu²⁺(1) Halophosphate phosphor: (Sr, Ba)₁₀ (PO₄ )₆ Cl₂ :Eu²⁺ , Sr₁₀ (PO₄ )₆ Cl₂ :Eu²⁺

(2)硅酸盐(Silicate)荧光体：Ba₃MgSi₂O₈:Eu²⁺(2) Silicate phosphor: Ba₃ MgSi₂ O₈ :Eu²⁺

ii.蓝绿光荧光体ii. Blue-green phosphor

(1)铝酸盐荧光体：Sr₄Al₁₄O₂₅:Eu²⁺(1) Aluminate phosphor: Sr₄ Al₁₄ O₂₅ :Eu²⁺

(2)硅酸盐荧光体：Sr₂Si₃O₈·2SrCl₂:Eu²⁺(2) Silicate phosphor: Sr₂ Si₃ O₈ ·2SrCl₂ :Eu²⁺

iii.绿光荧光体iii. Green Phosphor

(1)铝酸盐荧光体：(Ba，Sr，Ca)Al₂O₄:Eu²⁺(1) Aluminate phosphor: (Ba, Sr, Ca)Al₂ O₄ :Eu²⁺

(2)硅酸盐(Silicate)荧光体：(Ba，Sr)₂SiO₄:Eu²⁺(2) Silicate phosphor: (Ba, Sr)₂ SiO₄ :Eu²⁺

(3)α-塞隆(SIALON)荧光体：Sr_1.5Al₃Si₉N₁₆:Eu²⁺，(3) α-SIALON phosphor: Sr_1.5 Al₃ Si₉ N₁₆ :Eu²⁺ ,

 Ca-α-SiAlON:Yb²⁺Ca-α-SiAlON:Yb²⁺

(4)β-塞隆荧光体：β-Si₃N₄:Eu²⁺(4) β-sialon phosphor: β-Si₃ N₄ :Eu²⁺

(5)氮氧化合物荧光体(5) Nitride phosphor

硅酸盐氧基氮化物(Oxonitrido-silicate)：Silicate oxynitride (Oxonitrido-silicate):

(Ba，Sr，Ca)Si₂O₂N₂:Eu²⁺(Ba, Sr, Ca)Si₂ O₂ N₂ :Eu²⁺

铝硅酸盐氧基氮化物(Oxonitrido-aluminosilicate)：Aluminosilicate oxynitride (Oxonitrido-aluminosilicate):

(Ba，Sr，Ca)₂Si₄AlON₇:Ce³⁺，(Ba，Sr，Ca)Al_2-xSi_xO_4-xN_x:Eu²⁺(0＜x＜2)(Ba, Sr, Ca)₂ Si₄ AlON₇ :Ce³⁺ , (Ba, Sr, Ca)Al_2-xSix O_4-x N_x :Eu²⁺ (0<x<2)

(6)氮化物荧光体(6) Nitride phosphor

硅酸盐氮化物(Nitrido-silicate)荧光体：Silicate nitride (Nitrido-silicate) phosphor:

(Ba，Sr，Ca)₂Si₅N₈:Ce³⁺(Ba, Sr, Ca)₂ Si₅ N₈ :Ce³⁺

(7)硫化物荧光体(7) Sulfide Phosphor

镓硫化合物(Thiogallate)：SrGa₂S₄:Eu²⁺Gallium sulfur compound (Thiogallate): SrGa₂ S₄ :Eu²⁺

(8)石榴石荧光体：Ca₃Sc₂Si₃O₁₂:Ce³⁺，BaY₂SiAl₄O₁₂:Ce³⁺，(8) Garnet phosphor: Ca₃ Sc₂ Si₃ O₁₂ :Ce³⁺ , BaY₂ SiAl₄ O₁₂ :Ce³⁺ ,

Y₃(Al，Ga)₅O₁₂:Ce³⁺Y₃ (Al, Ga)₅ O₁₂ :Ce³⁺

(9)氧化物荧光体：CaSc₂O₄:Ce³⁺(9) Oxide phosphor: CaSc₂ O₄ :Ce³⁺

iv.黄光荧光体iv. Yellow phosphor

(1)硅酸盐(Silicate)荧光体：(Sr，Ba)₂SiO₄:Eu²⁺，Sr₃SiO₅:Eu²⁺(1) Silicate phosphor: (Sr, Ba)₂ SiO₄ :Eu²⁺ , Sr₃ SiO₅ :Eu²⁺

(2)石榴石荧光体：(Y，Gd)₃Al₅O₁₂:Ce³⁺，Y₃Al₅O₁₂:Ce³⁺，Pr³⁺(2) Garnet phosphor: (Y, Gd)₃ Al₅ O₁₂ :Ce³⁺ , Y₃ Al₅ O₁₂ :Ce³⁺ , Pr³⁺

(3)硫化物荧光体(3) Sulfide Phosphor

镓硫化合物：CaGa₂S₄:Eu²⁺Gallium sulfide: CaGa₂ S₄ :Eu²⁺

(4)α-塞隆荧光体：(4) α-sialon phosphor:

Ca-α-SiAlON:Eu²⁺，Ca-α-SiAlON:Eu²⁺ ,

(0.75(Ca_0.9Eu_0.1)O·2.25AlN·3.25Si₃N₄:Eu²⁺、Ca_1.5Al₃Si₉N₁₆:Eu²⁺等等)(0.75(Ca_0.9 Eu_0.1 )O·2.25AlN·3.25Si₃ N₄ :Eu²⁺ , Ca_1.5 Al₃ Si₉ N₁₆ :Eu²⁺ etc.)

v.橙光荧光体v. Orange phosphor

(1)硅酸盐(Silicate)荧光体：(Sr，Ca)₂SiO₄:Eu²⁺(1) Silicate phosphor: (Sr, Ca)₂ SiO₄ :Eu²⁺

(2)石榴石荧光体：Gd₃Al₅O₁₂:Ce³⁺(2) Garnet phosphor: Gd₃ Al₅ O₁₂ :Ce³⁺

(3)α-塞隆荧光体：Ca-α-SiAlON:Eu²⁺(3) α-sialon phosphor: Ca-α-SiAlON:Eu²⁺

vi.红光荧光体vi. Red phosphor

(1)硫化物荧光体：(Sr，Ca)S:Eu²⁺，La₂O₂S:Eu³⁺，Sm³⁺(1) Sulfide phosphor: (Sr, Ca)S:Eu²⁺ , La₂ O₂ S:Eu³⁺ , Sm³⁺

(2)硅酸盐(Silicate)荧光体：Ba₃MgSi₂O₈:Eu²⁺，Mn²⁺(2) Silicate phosphor: Ba₃ MgSi₂ O₈ :Eu²⁺ , Mn²⁺

(3)氮化物荧光体或氮氧化合物荧光体：(Ca，Sr)SiN₂:Eu²⁺，(Ca，Sr)AlSiN₃:Eu²⁺，Sr₂Si_5-xAl_xO_xN_8-x:Eu²⁺(0≤x≤1)(3) Nitride phosphor or oxynitride phosphor: (Ca, Sr)SiN₂ :Eu²⁺ , (Ca, Sr)AlSiN₃ :Eu²⁺ , Sr₂ Si_5-x Al_x O_x N_{8 -x} :Eu²⁺ (0≤x≤1)

补充说明一下，也可以使用金属络合物、有机染料或颜料等波长变换材料来代替荧光体。Incidentally, instead of phosphors, wavelength conversion materials such as metal complexes, organic dyes, and pigments may be used.

[0369]可以期待添加在透光性材料(荧光体层、密封材料)中的微粒带来下述效果，即：摇变性(thixotropy)的提高、光散射效应、密封材料的折射率的调整及传热性的提高等等。不仅可以用在第一实施例中所示的微粒作为微粒，例如也可以采用为金属化合物的BaSO₄、ZnS或V₂O₅、或者这些物质的混合物作为微粒。微粒的中心粒径在几十nm到几百nm。It can be expected that the microparticles added in the translucent material (phosphor layer, sealing material) bring the following effects, that is: the improvement of thixotropy (thixotropy), the light scattering effect, the adjustment of the refractive index of the sealing material, and Improved heat transfer, etc. Not only the particles shown in the first exemplary embodiment, but also BaSO₄ , ZnS or V₂ O₅ , which are metal compounds, or mixtures of these substances, for example, can be used as particles. The central particle size of the particles is tens to hundreds of nm.

[0370]作为安装LED芯片12的衬底31或基座，可以采用是AlN、Al₂O₃、BN、AlN、MgO、ZnO、SiC或C或者含有这些物质中的至少两种物质的混合物的陶瓷；也可以采用是铝、铜、铁或金或者含有这些金属中的至少两种金属的合金的金属；也可以采用环氧玻璃。[0370] As thesubstrate 31 or base on which theLED chip 12 is mounted, it is possible to use AlN, Al₂ O₃ , BN, AlN, MgO, ZnO, SiC or C or a mixture containing at least two of these substances. Ceramics; metals that are aluminum, copper, iron or gold or alloys containing at least two of these metals can also be used; epoxy glass can also be used.

[0371]作为设置在壳体部件51或反射器81上的反射层，不仅可以采用铝，也可以采用是银、金、镍、铑或钯或者含有这些物质中的至少两种物质的合金的金属。[0371] As the reflective layer provided on thecase member 51 or thereflector 81, not only aluminum but also silver, gold, nickel, rhodium or palladium or an alloy containing at least two of these substances can be used. Metal.

[0372]作为密封材料16d的基体材料16a，可以采用是环氧树脂、硅树脂、丙烯树脂、尿素树脂、亚胺树脂、聚碳酸脂树脂、聚苯硫醚树脂、液晶聚合物树脂或丙烯腈-丁二烯-苯乙烯(ABS)树脂或者含有这些物质中的至少两种物质的混合物的树脂。可以采用石英或耐热性硬质玻璃作为盖玻璃(cap glass)。可以采用低熔点玻璃作为密封用玻璃。[0372] As thebase material 16a of the sealingmaterial 16d, epoxy resin, silicone resin, acrylic resin, urea resin, imide resin, polycarbonate resin, polyphenylene sulfide resin, liquid crystal polymer resin or acrylonitrile can be used. - Butadiene-styrene (ABS) resins or resins containing a mixture of at least two of these substances. Quartz or heat-resistant hard glass can be used as the cap glass. Low-melting-point glass can be used as the glass for sealing.

[0373]作为用来对LED芯片进行密封的密封气体，可以采用氮、氩或干燥的空气。[0373] As the sealing gas for sealing the LED chip, nitrogen, argon, or dry air can be used.

-工业实用性--Industrial applicability-

[0374]根据本发明，能够得到由使用寿命长且亮度高的LED等构成的半导体发光装置，本发明对通过树脂密封来将形成有发光元件的半导体芯片封装化而成的半导体发光装置等很有用。[0374] According to the present invention, it is possible to obtain a semiconductor light-emitting device composed of LEDs having a long service life and high brightness. it works.

Claims (38)

1. semiconductor light-emitting apparatus, comprise emit wavelength blue light region to the semiconductor chip of the light of ultraviolet region and be formed on that described light passes through pass through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises encapsulant and fluorescent material, the sealing material is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside.

2. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing form cover described semiconductor chip around.

3. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing forms with described semiconductor chip and contacts.

4. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing is made of first sealing and second sealing, and this first sealing is made of described encapsulant; This second sealing is formed on the outside of this first sealing, comprises described fluorescent material.

5. semiconductor light-emitting apparatus according to claim 4 is characterized in that:

Described semiconductor light-emitting apparatus also comprises: reflection part, this reflection part are arranged on the below and the side at least of the described semiconductor chip in described first sealing, allow described light reflect.

6. semiconductor light-emitting apparatus according to claim 5 is characterized in that:

Described encapsulant is the bottom of fixing described semiconductor chip and being supported by described reflection part with the pastes with transparency.

7. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing is made of first sealing and second sealing, and this first sealing is made of described encapsulant; This second sealing is formed on the outside of this first sealing;

Described particle is made of the material of the light that absorbs ultraviolet region.

8. semiconductor light-emitting apparatus according to claim 1 is characterized in that:

Described sealing is made of first sealing and second sealing, and this first sealing comprises described fluorescent material; This second sealing is formed on the outside of this first sealing, is made of described encapsulant.

9. according to each the described semiconductor light-emitting apparatus in the claim 4 to 8, it is characterized in that:

The profile of described first sealing and described second sealing is hemispherical.

10. according to each the described semiconductor light-emitting apparatus in the claim 4 to 8, it is characterized in that:

The cross-sectional profile of described first sealing is quadrangle, and the profile of described second sealing is hemispherical.

11. each the described semiconductor light-emitting apparatus according in the claim 4 to 8 is characterized in that:

The cross-sectional profile of described first sealing and described second sealing is quadrangle.

12. each the described semiconductor light-emitting apparatus according in the claim 4 to 8 is characterized in that:

The profile of described first sealing is hemispherical, and the cross-sectional profile of described second sealing is quadrangle.

13. a semiconductor light-emitting apparatus, what comprise the semiconductor chip of emitting light and be formed on that described light passes through passes through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside, and described sealing is made of first sealing that covers described semiconductor chip and second sealing that is formed on the outside of this first sealing;

Described first sealing, according to first refractive index of described light wavelength decision, be higher than described second sealing, according to second refractive index of described light wavelength decision.

14. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The composition that is contained in the described particle in described first sealing is different with the composition of described particle in being contained in described second sealing.

15. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

Described particle in described first sealing shared ratio in described composite material is higher than described particle in described second sealing shared ratio in described composite material.

16. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The profile of described first sealing and described second sealing is hemispherical.

17. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The cross-sectional profile of described first sealing is quadrangle, and the profile of described second sealing is hemispherical.

18. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The cross-sectional profile of described first sealing and described second sealing is quadrangle.

19. semiconductor light-emitting apparatus according to claim 13 is characterized in that:

The profile of described first sealing is hemispherical, and the cross-sectional profile of described second sealing is quadrangle.

20. a semiconductor light-emitting apparatus, what comprise the semiconductor chip of emitting light and be formed on that described light passes through passes through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside, and, be set at from from the near medial region of described semiconductor chip zone step-down gradually laterally according to the refractive index of described light wavelength decision.

21. semiconductor light-emitting apparatus according to claim 20 is characterized in that:

In described sealing, the described particle shared ratio in described composite material in the near medial region of described semiconductor chip is higher than described particle in the exterior lateral area in the outside that is in this medial region shared ratio in described composite material.

22. semiconductor light-emitting apparatus according to claim 20 is characterized in that:

In the described particle in being contained in described sealing, the composition of particle of inboard that is contained in described sealing is different with the composition of the particle in the outside that is contained in described sealing.

23. a semiconductor light-emitting apparatus, what comprise the semiconductor chip of emitting light and be formed on that described light passes through passes through sealing at least a portion zone on the path, it is characterized in that:

Described sealing comprises the encapsulant that is made of the composite material that comprises basis material and particle, described particle is made of inorganic material, be dispersed in this basis material, the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside, and described sealing is made of first sealing that covers described semiconductor chip and second sealing that is formed on the outside of this first sealing;

Described second sealing comprises and is used as particle described particle, that be made of the material of the light that absorbs ultraviolet region.

24. semiconductor light-emitting apparatus according to claim 23 is characterized in that:

Described second sealing forms: the top, below and the side that cover described semiconductor chip.

25. semiconductor light-emitting apparatus, comprise that emit wavelength is at the semiconductor chip of blue light region to the light of ultraviolet region, what be formed on that described light passes through passes through sealing at least a portion zone on the path, support the support component of described semiconductor chip, and pastes fixing described semiconductor chip and described support component, that have the transparency, it is characterized in that:

Described pastes is made of the composite material that comprises basis material and particle, and described particle is made of inorganic material, has been dispersed in this basis material, and the effective grain size of described particle is below 1/4th of described light wavelength of described basis material inside;

Described particle is made of the material of the light that absorbs ultraviolet region.

26. each the described semiconductor light-emitting apparatus according in the claim 13 to 25 is characterized in that:

Described sealing comprises fluorescent material.

27. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described particle is made of inorganic compound.

28. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described basis material is made of resin material.

29. semiconductor light-emitting apparatus according to claim 28 is characterized in that:

Described resin material is an inorganic macromolecule material.

30. semiconductor light-emitting apparatus according to claim 28 is characterized in that:

Described resin material is a high-molecular organic material.

31. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described basis material is made of the material to visible transparent.

32. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described composite material is to visible transparent.

33. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

The refractive index according to the decision of described light wavelength of described particle is higher than the refractive index according to described light wavelength decision of described basis material, and equates with the refractive index of described semiconductor chip or below the refractive index of this semiconductor chip.

34. each the described semiconductor light-emitting apparatus according in claim 1 to 8 and 13 to 25 is characterized in that:

Described particle in described composite material shared percent by volume more than 5% and below 60%.

35. each the described semiconductor light-emitting apparatus according in claim 1 to 3 and 20 to 25 is characterized in that:

The profile of described sealing is hemispherical.

36. each the described semiconductor light-emitting apparatus according in claim 1 to 3 and 20 to 25 is characterized in that:

The cross-sectional profile of described sealing is quadrangle.

37. each the described semiconductor light-emitting apparatus according in the claim 1 to 4,7,8 and 13 to 25 is characterized in that:

Described semiconductor light-emitting apparatus also comprises: reflection part, this reflection part are arranged in the zone of side of the described semiconductor chip in the described sealing, allow described light reflection.

38., it is characterized in that according to the described semiconductor light-emitting apparatus of claim 37:

The section shape of described sealing is following narrow and back taper last hem width.

Images