Backlight module and light-emitting device thereofTechnical field
The present invention is about a kind of backlight module and light-emitting device thereof.
Background technology
Backlight module (backlight module) particularly is applied in the LCD for being widely used in the key part and component in the flat-panel screens.Backlight module generally is located at the back side of the display panel of LCD, and according to the difference of demand on the LCD function, its backlight module mainly can be divided into two kinds of direct type backlight module and side light type back light modules, wherein, because the light utilization efficiency of direct type backlight module is good than side light type back light module, therefore be applied to the display panels of higher brightness demand or large-size, for example LCD TV more.
At present, general cold cathode fluorescent lamp (the cold cathode fluorescent lamp that uses, CCFL) as the light source of backlight module, the principle of luminosity of cathode fluorescent tube is described below: when giving the fluorescent tube high voltage, lamp tube electrode penetrates electronics, the electronics that is penetrated by electrode is subjected to electric field effects and moves, thereby obtains kinetic energy.When in these high-velocity electrons that have suitable kinetic energy and the pipe during mercury bump, the mercury molecule moment under this state is disengaged the energy that increases, and returns original shakedown rapidly by non-persistent state, and the energy of emitting at this moment promptly goes out with ultra violet radiation.The fluorescent material of this ultraviolet ray excited inside pipe wall coating, moment disengaged it again after the electronics in the fluorescent material stored energy, simultaneously long visible light of emit wavelength.
Cathode fluorescent tube (Cold Cathode Fluorescent Lamp, CCFL) because of its luminous intensity height, luminous evenly, can do superfine of fluorescent tube and can be made into different shape, so in fields such as LCD, scanner, automobile instrument panel, miniature advertisement lamp box and picture frame making, widely apply at present, as the background light source of the said goods.
Existing cold cathode fluorescent lamp is with the fluorescent material such as the redness of three kinds of colors, blue, after green is filled part mixing according to ratio, be coated in the fluorescent tube again, and the ultraviolet light that is excited via fluorescent tube inside stimulates fluorescent material to convert visible light to, and indivedual fluorescent materials radiate different spectrum sections respectively according to its material behavior, again under the effect via a colored filter and liquid crystal system, these three kinds of monochromatic fluorescent materials are shown, yet the degree of this video picture number of colours can be limited by these three kinds of fluorescent materials, and according to the color saturation color gamut of the council of ITV international television (the National Television System Committee) television system that defines, shown in Figure 1A, wherein Line 1 is according to (the CommissionInternational de I ' Eclairage of International Commission on Illumination, be called for short CIE) defined CIE 1931 chromaticity coordinates figure, 2 of Line define the absolutely color saturation scope that reaches according to committee member club of ITV international television.Yet, the gamut range that the employed redness of general actual cold cathode fluorescent lamp, green, blue system can show then is shown in the Line 3, compared to the defined color saturation of the council of ITV international television, it only can reach about 70 percent multicolored color saturation degree, Figure 1B illustrates traditional cold cathode fluorescent lamp via red (Y203:Eu), green (LaP04:Ce, Tb), after blue (BaMg2ALL6027:Eu) fluorescent material is coated on the inwall of cold cathode fluorescent lamp, the optical wavelength that is presented and the synoptic diagram of light intensity.
Therefore, how not increase under the fluorescent tube volume, reaching higher color saturation, real be now industry problem extremely to be solved.
Summary of the invention
Therefore, for addressing the above problem, the present invention proposes a kind of light-emitting device, this light-emitting device is the material that filling one can be subjected to the voltage excitation line in an airtight fluorescent tube, for example be made up of an inert gas or the gas that contains mercury gas/particle, wherein this fluorescent tube is an example with a cold cathode fluorescent lamp, and this fluorescent tube is provided with an inwall, the two ends involution of this fluorescent tube is introduced pair of metal electrodes, and the outer end of metal electrode is to be connected with an external high pressure power supply with an outer lead.
When this this metal electrode of external high pressure power drives, this metal electrode discharges in this fluorescent tube, free electron quickens to advance under high-voltage electric field drives simultaneously, free electronics and inert gas and the exchange of mercury vapour collision produce power give off a ultraviolet light and intert-gas atoms or mercury vapor atoms are turned back in excited state in the ground state process in the process of advancing.
Wherein the shape of this fluorescent tube can be strip, annular, arc, polygon, plate shaped, Else Rule or irregularly shaped, and the material of this fluorescent tube system is selected from the material of glass, plastics, pottery or other light-permeable, this fluorescent tube can for a mercury vapor fluorescent lamps pipe, external electrode fluorescence lamp pipe, cathode fluorescent tube (Cold Cathode Fluorescent Lamp, CCFL) or other gas-discharge lamp.
The inwall of light-emitting device of the present invention is coated with a fluorescent material and a coating layer that mixes, and by this fluorescent material of ultraviolet excitation and this coating layer, and gives off a visible light.
This coating layer then comprises a quantum-dot structure material, and it electrically reaches optical characteristics and is determined by component, crystalline solid size and surface, can determine it to absorb the radiation wavelength by different material and different size.This coating layer can comprise a core be cadmium telluride (CdTe) and the surface (the crystalline solid size is about 4.3nm for the quantum dot material of cadmium sulfide (CdS), its radiation crest is about 650nm), one core be cadmium sulfide (CdS) and the surface (the crystalline solid size is about 2.1nm for the quantum dot material of zinc sulphide (ZnS), its the radiation crest about 520nm) and a core be that (the crystalline solid size is about 2.4nm to cadmium selenide (CdSe), its radiation crest is about 520nm) the quantum dot material that constituted, and with this fluorescent material fill part mix after, be uniformly coated on the inwall or outer wall of this fluorescent tube.
The present invention utilizes this coating layer to have the quantum-dot structure material, determines it to absorb the radiation wavelength, is used for changing the ultraviolet light that energy exchange is radiated in this fluorescent tube, and sees through colored filter and liquid crystal panel system, reaches higher color saturation.The color saturation scope that the present invention can reach is compared to the about gamut range that can promote one of percentage 115 of tradition.
Wherein this fluorescent material comprises the pulverulent material of a redness, blueness, green or other color, and it is uniformly coated on this inwall.
This coating layer can be an II-VI family, III-V family or IV-VI semiconductor nano crystalline solid, can be selected from a cadmium selenide (CdSe), zinc sulphide (ZnS), cadmium telluride (CdTe), vulcanized lead (PbS), cadmium sulfide (CdS), lead selenide (PbSe) or one of group that its potpourri is formed.
The spectrum that this coating layer absorbed can be the ultraviolet spectrum of 300nm-400nm, the visible spectrum of 400nm-700nm or the infrared spectrum of 700nm-2500nm.
Backlight module of the present invention comprises one first substrate, one second substrate, a light-emitting device and a coating layer, wherein this second substrate is relative with this first substrate and establish, this light-emitting device is arranged between this first substrate and this second substrate, and this coating layer then can be coated on the fluorescent tube of this first substrate, this second substrate or this light-emitting device.
This first substrate can be a reflecting plate, and in order to reflect the light that this light-emitting device produces, this second substrate can be a diffuser plate, then this reflected light further is scattering into uniform light.
In the backlight module of the present invention, this coating layer is coated on the surface of this second substrate, different material that this coating layer is included is formed and the quantum-dot structure material of different sizes is coated on the surface of this first substrate or second substrate successively, maybe will this different quantum-dot structure material evenly be coated on again after the mixing this first substrate or this second substrate the surface, maybe this coating layer is coated on the fluorescent tube of this light-emitting device.
Backlight module of the present invention and light-emitting device thereof, can be in response to different users's needs, individual design, be modified to its required gamut range, increase outside user's the facility, and can show the color gamut that is beyond one's reach in the past, increase the color saturation that it can show, make its shown color more gorgeous, make color more life-like, and can make its shown picture, sharper keen, clear.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
Figure 1A illustrates the shown gamut range of tradition;
Figure 1B illustrates the synoptic diagram of traditional optical wavelength and light intensity;
Fig. 2 A illustrates light-emitting device synoptic diagram of the present invention;
Fig. 2 B illustrates the A-A ' sectional view of light-emitting device of the present invention;
Fig. 2 C illustrates the synoptic diagram of shown optical wavelength of light-emitting device of the present invention and light intensity;
Fig. 2 D illustrates the shown gamut range of light-emitting device of the present invention;
Fig. 2 E illustrates the A-A ' sectional view of light-emitting device of the present invention;
Fig. 3 A~Fig. 3 H illustrates the synoptic diagram of backlight module of the present invention.
The primary clustering symbol description
10: light-emitting device 12: power supply
101: fluorescent tube 200: backlight module
102: 201: the first substrates of inwall
103: 202: the second substrates of electrode
104: fluorescent material 1051: the quantum dot material
105: coating layer 1052: the quantum dot material
106: outer wall 1053: the quantum dot material
11: lead
Embodiment
Below explanation is according to a kind of light-emitting device of the present invention, and wherein identical assembly will be illustrated with identical reference marks.
Fig. 2 A illustrates light-emitting device synoptic diagram of the present invention, light-emitting device 10 of the present invention, this light-emitting device 10 is materials that filling one can be subjected to the voltage excitation line in an airtightfluorescent tube 101, for example formed by an inert gas or the gas that contains mercury gas/particle, thisfluorescent tube 101 is to be example with a cold cathode fluorescent lamp in the present embodiment, thisfluorescent tube 101 has aninwall 102, and the two ends involution of thisfluorescent tube 101 is introduced pair ofmetal electrodes 103, and the outer end of thismetal electrode 103 is to be connected with an external highpressure power supply 12 with an outer lead 11.When this external highpressure power supply 12 drives thismetal electrode 103, thismetal electrode 103 discharges in thisfluorescent tube 101, free electron quickens to advance under high-voltage electric field drives simultaneously, free electronics and inert gas or the exchange of mercury vapour collision produce power give off a ultraviolet light and intert-gas atoms or mercury vapor atoms are turned back in excited state in the ground state process in the process of advancing.
Wherein the shape of thisfluorescent tube 101 can be strip, annular, arc, polygon, plate shaped, Else Rule or irregularly shaped, and the material of thisfluorescent tube 101 is selected from the plastics or the stupalith of glass or other light-permeable, thisfluorescent tube 101 can for a mercury vapor fluorescent lamps pipe, external electrode fluorescence lamp pipe, cathode fluorescent tube (Cold Cathode Fluorescent Lamp, CCFL) or other gas-discharge lamp.
Fig. 2 B illustrates the dotted line A-A ' sectional view of light-emitting device 10 of the present invention among Fig. 2 A, wherein thisinwall 102 is coated with afluorescent material 104 and acoating layer 105 that mixes, by thisfluorescent material 104 of ultraviolet excitation and thiscoating layer 105, and give off a visible light.
105 of this coating layers comprise a quantum-dot structure material, and it electrically reaches optical characteristics and is determined by component, crystalline solid size and surface, can determine it to absorb the radiation wavelength by different material and different size.Thiscoating layer 105 can be by a core be cadmium telluride (CdTe) and the surface (the crystalline solid size is about 4.3nm for the quantum dot material of cadmium sulfide (CdS), its radiation crest is about 650nm), one core be cadmium sulfide (CdS) and the surface (the crystalline solid size is about 2.1nm for the quantum dot material of zinc sulphide (ZnS), its the radiation crest about 520nm) and a core be that (the crystalline solid size is about 2.4nm to cadmium selenide (CdSe), its radiation crest is about 520nm) the quantum dot material that constituted, and with thisfluorescent material 104 fill part mix after, be uniformly coated on thisinwall 102 of thisfluorescent tube 101, Fig. 2 C illustrates the synoptic diagram of its optical wavelength that presents and light intensity, and Fig. 2 D then illustrates its color saturation color gamut shown according to International Commission on Illumination.
Shown in Fig. 2 C, the present invention utilizes this coating layer to have the quantum-dot structure material, determines it to absorb the radiation wavelength, is used for changing the ultraviolet light that energy exchange is radiated in thisfluorescent tube 101, and see through colored filter and liquid crystal panel system, reach higher color saturation.
Line 1 is according to the defined gamut range of International Commission on Illumination among Fig. 2 D, 2 of Line define the absolutely color saturation scope that reaches according to committee member club of ITV international television, 3 of Line are the color saturation scopes that the present invention can reach, compared to the council of ITV international television, it can reach about color saturation scope of 86 percent, compared to tradition (as the Line among Figure 1A 3), can promote the gamut range of one of percentage 115 approximately.
Certainly, thiscoating layer 105 can also be coated on theouter wall 106 of thisfluorescent tube 101 shown in Fig. 2 E.
Wherein thisfluorescent material 104 comprises the pulverulent material of a redness, blueness, green or other color, and it is uniformly coated on thisinwall 102.
Thiscoating layer 105 can be an II-VI family, III-V family or IV-VI semiconductor nano crystalline solid, can be selected from a cadmium selenide (CdSe), zinc sulphide (ZnS), cadmium telluride (CdTe), vulcanized lead (PbS), cadmium sulfide (CdS), lead selenide (PbSe) or one of group that its potpourri is formed.
The spectrum that thiscoating layer 105 is absorbed can be the ultraviolet spectrum of 300nm-400nm, the visible spectrum of 400nm-700nm or the infrared spectrum of 700nm-2500nm.
Fig. 3 A illustratesbacklight module 200 synoptic diagram of the present invention, the assembly that present embodiment is same with the above-mentioned embodiment or suitable indicates same figure number, thisbacklight module 200 comprises onefirst substrate 201, onesecond substrate 202, a light-emitting device 10 and acoating layer 105, wherein thissecond substrate 202 is relative with thisfirst substrate 201 and establish, this light-emitting device 10 is arranged between thisfirst substrate 201 and thissecond substrate 202, and 105 of this coating layers can be coated on thefluorescent tube 101 of thisfirst substrate 201, thissecond substrate 202 or this light-emitting device 10.
Thisfirst substrate 201 can be a reflecting plate, and in order to reflect the light that this light-emitting device 10 produces, thissecond substrate 202 can be a diffuser plate, then this reflected light further is scattering into uniform light.
Thiscoating layer 105 is coated on the surface of thissecond substrate 202, thiscoating layer 105 also comprise a core be cadmium telluride (CdTe) and the surface (the crystalline solid size is about 4.3nm for thequantum dot material 1051 of cadmium sulfide (CdS), its radiation crest is about 650nm), one core be cadmium sulfide (CdS) and the surface (the crystalline solid size is about 2.1nm for thequantum dot material 1052 of zinc sulphide (ZnS), its the radiation crest about 520nm) and a core be that (the crystalline solid size is about 2.4nm to cadmium selenide (CdSe), its radiation crest is about 520nm) thequantum dot material 1053 that constituted, this different material formed and the quantum-dot structure material 1051 of different sizes, 1052,1053 are coated on the surface of thissecond substrate 202 successively.
Thiscoating layer 105 can also be shown in Fig. 3 B, with this quantum-dot structure material 1051,1052, be coated on the surface of thissecond substrate 202 after 1053 mixing again, or shown in Fig. 3 C, thiscoating layer 105 is coated on all surfaces of thisfirst substrate 201, or shown in Fig. 3 D, thiscoating layer 105 is coated on the part surface of thisfirst substrate 201, or shown in Fig. 3 E, with this quantum-dot structure material 1051,1052,1053 are coated on the part surface of thisfirst substrate 201, and this quantum-dot structure material 1051,1052,1053 is adjacent one another are, or shown in Fig. 3 F, with this quantum-dot structure material 1051,1052,1053 are coated on the part surface of thisfirst substrate 201 respectively, or shown in Fig. 3 G, thiscoating layer 105 is coated on theinwall 104 of thisfluorescent tube 101 of this light-emitting device 10, or shown in Fig. 3 H, thiscoating layer 105 is coated on theouter wall 106 of thisfluorescent tube 101 of this light-emitting device 10.
Backlight module of the present invention and light-emitting device thereof, can be in response to different users's needs, individual design, be modified to its required gamut range, increase outside user's the facility, and can show the color gamut that is beyond one's reach in the past, increase the color saturation that it can show, make its shown color more gorgeous, make color more life-like, and can make its shown picture, sharper keen, clear.
The above only is the preferred embodiments of the present invention, the foregoing description only be used for the explanation but not in order to limit scope of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations, therefore category of the present invention is defined by claims.All according to equalization variation and modification that the present invention did, all should belong to covering scope of the present invention.