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CN101016622A - Chemical vapor deposition apparatus for flat display - Google Patents

Chemical vapor deposition apparatus for flat display
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Publication number
CN101016622A
CN101016622ACNA2007100034722ACN200710003472ACN101016622ACN 101016622 ACN101016622 ACN 101016622ACN A2007100034722 ACNA2007100034722 ACN A2007100034722ACN 200710003472 ACN200710003472 ACN 200710003472ACN 101016622 ACN101016622 ACN 101016622A
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chamber
pedestal
cooling block
cooling
flat
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CN101016622B (en
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金南珍
金俊洙
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SFA Engineering Corp
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SFA Engineering Corp
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Abstract

Translated fromChinese

本发明是关于一种用于平板显示器(flat display)的化学气相沉积设备(chemical vapor deposition)包含:腔室,在所述腔室中执行用于所述平面显示器的沉积工艺;基座,其安装在腔室中,能够提升且具有上表面,在所述上表面上加载所述平板显示器;以及至少一个冷却块,其提供在腔室的底部表面上,以在基座下降时接触基座,且冷却在沉积工艺期间被加热的基座。由于强行冷却基座以在相对较短时间内将基座温度降低到恰当水平,因而可减少设备维护和修理时间的等待时间(stand by time)。因此,改进设备的操作速率和其生产率,且防止工艺损失的产生。

Figure 200710003472

The invention relates to a chemical vapor deposition apparatus for a flat display comprising: a chamber in which a deposition process for said flat display is performed; a susceptor whose mounted in the chamber, liftable and having an upper surface on which the flat panel display is loaded; and at least one cooling block provided on a bottom surface of the chamber to contact the base when the base is lowered , and cool the susceptor that is heated during the deposition process. Since the base is forcibly cooled to lower the temperature of the base to an appropriate level in a relatively short period of time, stand by time for equipment maintenance and repair time can be reduced. Therefore, the operating rate of the equipment and its productivity are improved, and the occurrence of process loss is prevented.

Figure 200710003472

Description

The chemical vapor depsotition equipment that is used for flat-panel monitor
Technical field
The present invention relates to a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, and more particularly, relate to a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, wherein in the short period base-plate temp is being cooled to proper level by force relatively, is reducing so that be used for the waiting time of maintain/repair equipment.Therefore, improve productivity, and limited the generation of process loss.
Background technology
Flat-panel monitor has been widely used in for example product of personal portable terminals, televisor and computer monitor.The type of flat-panel monitor is diversified, cathode tube (cathode ray tube for example, CRT), liquid-crystal display (liquid crystal display, LCD), Plasmia indicating panel (plasmadisplay panel, PDP) and Organic Light Emitting Diode (organic light emitting diode, OLED).
Described LCD is a kind of device, it uses certain photoswitch, by between two thin up and down glass substrate, injecting liquid crystal as the intermediate materials between solid-state and the liquid state, and use the voltage difference between the electrode of up and down glass substrate to change the orientation (orientation) of liquid crystal molecule, and show character or image.Current velometer and the operating system that is widely used in from electronic product (for example electronic watch, electronic calculator, televisor and laptop computer) to aircraft of LCD.
Televisor has the size that 20 to 30 inches size and watch-dog have less than 17 inches has become main flow.Yet more and more preference has 40 inches or larger sized televisor and has 20 inches or larger sized computer monitor recently.
Therefore, LCD manufacturers has attempted producing bigger glass substrate.At present, carry out many researchs come at have 1950 * 2250mm or 1870 * 2200mm size the 7th generation product have 2160 * 2460mm or larger sized the 8th generation product increase the size of glass substrate.
Main by TFT technology (wherein repeated deposition, photoetching and etching), unit (cell) technology (wherein assembling upper and lower glass substrate) and the module process that is used to finish LCD make LCD.
In the chemical vapor deposition method as one of many technologies, the high-octane silica-based one-tenth segregant that has that is under the isoionic state owing to external high frequency power passes electrode and is deposited on the glass substrate from gas distribution plate injection.Described technology is carried out in chamber.
As will not describing the person after a while, provide pedestal (on described pedestal, load and stand sedimentary glass substrate) at the lower region of the chamber that is used for carrying out chemical vapor deposition method, and in the upper area of chamber, provide electrode.When on the upper surface that glass substrate is carried in pedestal, pedestal is heated to about 400 ℃ temperature.Then, pedestal rises glass substrate is positioned near the gas distribution plate place that is positioned at the electrode below.Then, apply electric power, make described electrode and chamber insulation by using Teflon (Teflon) as insulating component by electrode.When the gas distribution plate with many apertures is passed in silica-based one-tenth segregant injection, carry out depositing operation with respect to glass substrate.
After the depositing operation that repeats with respect to glass substrate, the various parts in the chamber (surrounding structure that comprises chamber) need maintenance and repair work.After the temperature that is heated to about 400 ℃ pedestal is reduced to below 100 ℃ and is exposed to chamber in the air, carry out maintenance and repair work.
Yet, be used for the conventional chemical vapor deposition apparatus of flat-panel monitor, owing to need about temperature that will be heated to about 400 ℃ pedestal in 24 hours to be reduced to about below 100 ℃ usually, thereby there is a problem, that is, need the plenty of time to reduce base-plate temp to carry out maintenance and repair work.This is because only undertaken heat passage by the radiation under the vacuum state in chamber interior.
That is to say, in routine techniques because in order to carry out maintenance and repair work, need base-plate temp was reduced to from about 400 ℃ in about 24 hours about below 100 ℃, thereby the waiting time that is used for maintenance and repair work prolonged.Therefore, reduced the operation rate of equipment, and thereby productivity is descended, thereby produced process loss.
Summary of the invention
In order to solve above and/or other problem, the invention provides a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, its by force cooling base relatively in the short period base-plate temp is being reduced to proper level, so that can reduce the waiting time that is used for maintenance and repair work, the operation rate that can improve equipment and its productivity, and can prevent the generation of process loss.
The invention provides a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, it can reduce the impact that pedestal is caused because quick heat dissipates, and prevents to produce the crack owing to the sudden imbalance of temperature in pedestal.
According to an aspect of the present invention, a kind of chemical vapor depsotition equipment that is used for flat-panel monitor comprises: chamber, the depositing operation of execution flat-panel monitor in described chamber; Pedestal, it is installed in the chamber, can promote and have upper surface, loads flat-panel monitor on described upper surface; And at least one cooling block, it is provided on the lower surface of described chamber, with contact pedestal when described pedestal descends, and cooling heated pedestal during depositing operation.
Pedestal descend and the contact cooling piece before, come filled chamber with in hydrogen and the helium any one, described gas reduces the temperature of pedestal gradually, to prevent pedestal because contact cooling piece and cooling off fast.
Described pedestal comprises: the substrate loading section, and it flatly is configured in the chamber and support flat panel display; And pillar, its upper end is fixed on the center of described substrate loading section, and the lower wall of chamber is passed to be configured in the chamber outside in its lower end, the upper surface of wherein said cooling block is parallel to the lower surface of substrate loading section in fact, contacts so that cooling block has the surface with the lower surface of substrate loading section.
Described cooling block comprises: main part, and it contacts the lower surface of described chamber; And the cooling circuit, it is provided in the described main part, and predetermined refrigerant circulates by described cooling circuit.
At the maintenance and repair on period of chamber, described refrigerant circulates in described cooling circuit.
Described refrigerant is any one in water and the nitrogen.
Described equipment further comprises the base support of supporting base, and wherein cooling block is provided at the opposite side place about described pedestal supporter.
Described cooling block is stacked on the lower surface of chamber.
At least a portion of described cooling block is buried in the lower surface of chamber, so that expose the upper surface of cooling block from the lower surface of chamber.
Described flat-panel monitor is to be used for liquid-crystal display (liquid crystal display, big glass substrate LCD).
Description of drawings
To be more readily understood above and other feature and advantage of the present invention by describing the preferred embodiments of the present invention with reference to the accompanying drawings in detail, in the accompanying drawings:
Fig. 1 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to an embodiment of the invention.
Fig. 2 is the part enlarged view of the pedestal of contact cooling piece.
Fig. 3 is the cross-sectional view of the cooling block of Fig. 2.
Fig. 4 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to another embodiment of the present invention.
Fig. 5 is the part enlarged view according to the chemical vapor depsotition equipment that is used for flat-panel monitor of further embodiment of this invention.
Fig. 6 is the skeleton view of the chemical vapor depsotition equipment that is used for flat-panel monitor according to yet another embodiment of the invention.
10: chamber 11: lower surface
17: gas distribution plate 26: insulating body
30: pedestal 31: the substrate loading section
40: base support 50: cooling block
51: main part 53: the cooling circuit
Embodiment
Illustrate that with reference to being used to the accompanying drawing of the preferred embodiment of the present invention is in order to fully understand the present invention, its advantage and the purpose that realizes by enforcement the present invention.
Hereinafter, will be by explaining that with reference to the accompanying drawings the preferred embodiments of the present invention are to describe the present invention in detail.Similar reference numeral in the accompanying drawing is meant similar elements.
Fig. 1 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to an embodiment of the invention.With reference to figure 1, the chemical vapor depsotition equipment 1 that is used for flat-panel monitor comprises:chamber 10; Electrode 16, it is provided in the top of describedchamber 10 and to standing the predetermined silica-based one-tenth segregant of sedimentary flat-panel monitor G emission;Pedestal 30, it is configured inelectrode 16 belows and loads described flat-panel monitor G on described pedestal; And a plurality ofbase support 40, it is atpedestal 30 supported underneathpedestals 30.
Seal the outer wall of thischamber 10 from the outside, with the vacuum state of the deposition space S that keepschamber 10 inside.With the deposition space S of rare gas element (for example He or Ar) filledchamber 10, not influence silica-based one-tenth segregant, described silica-based one-tenth segregant is the deposition material that is produced by electrode 16.In the outer wall ofchamber 10, form opening 10a, make flat-panel monitor G can pass described opening 10a.Although do not illustrate, described opening 10a is is optionally opened and closed by door (not shown).
Gaseous diffusion panel 12 is provided on the lower surface ofchamber 10, and describedgaseous diffusion panel 12 is used for the gaseous diffusion that the deposition space S withchamber 10 exists and gets back to deposition space S.Central part office in the lower surface ofchamber 10 forms throughhole 10b, and thepillar 32 ofpedestal 30 passes described through hole 10b.Form a plurality of extra throughhole 10c around described throughhole 10b, the bar part 42 ofbase support 40 is passed described a plurality of extra throughhole 10c.
Electrode 16 is provided in the top of chamber 10.Providegas distribution plate 17 below describedelectrode 16, described gas distribution plate has a plurality of apertures and injects silica-based one-tenth segregant by described gas distribution plate.Thesubstrate loading section 31 that is parallel topedestal 30 with predetermined gap (for example, tens millimeters (mm)) disposes describedgas distribution plate 17.
As mentioned above, flat-panel monitor G can be cathode tube (cathode ray tube, CRT), liquid-crystal display (liquid crystal display, LCD), Plasmia indicating panel (plasma displaypanel, PDP) and Organic Light Emitting Diode (organic light emitting diode, OLED) in any one.Yet in the present embodiment, the big glass substrate g that is used for LCD is taken as flat-panel monitor G.Speech " greatly " mean the aforesaid the 7th or the 8th generation product size.In the following description, flat-panel monitor G is described to glass substrate G.
Long-range (remote)plasma body 18 is provided abovechamber 10 outsides, and the purge gas that its supply is scheduled to is to remove the impurity that exists in the chamber 10.Highfrequency power unit 20 is installed around remote plasma 18.Described highfrequency power unit 20 is connected toelectrode 16 by wire 22.Between the outer wall ofelectrode 16 andchamber 10, provideisolator 26, being electrically connected between the outer wall that preventselectrode 16 andchamber 10, whenelectrode 16 directly described electrical connection can take place during the outer wall of contact chambers 10.Can makeisolator 26 by using (for example) Teflon (Teflon).Betweengas distribution plate 17 andelectrode 16, form waste gascushioning pocket part 19.
Pedestal 30 comprises:substrate loading section 31, and it flatly is configured among the deposition space S ofchamber 10, with supporting loading glass substrate G thereon; Andpillar 32, its upper end is fixed on the central part office ofsubstrate loading section 31, and its lower end is configured inchamber 10 outsides by passing through hole 10b.The upper surface ofsubstrate loading section 31 is treated to surface plate, makes and accurately glass substrate G to be carried in the horizontality.At thesubstrate loading section 31 inner well heaters (not shown) of installing,,substrate loading section 31 is about 400 ℃ predetermined depositing temperature so that being heated to.
Pedestal 30 rises in the deposition space S ofchamber 10 and descends.That is to say that when glass-loaded substrate G,pedestal 30 is configured in the lower surface of chamber 10.As glass-loaded substrate G and when just carrying out technology, describedpedestal 30 rises so that glass substrate G is positioned neargas distribution plate 17 places.For this purpose, be provided for promoting the hoistingmodule 36 ofpedestal 30 atpillar 32 places of pedestal 30.Described hoistingmodule 36 makespedestal 30 be raised withbase support 40.
Whenpedestal 30 is raisedmodule 36 and promotes, between thepillar 32 ofpedestal 30 and throughhole 10b, must not produce any space.Therefore, around throughhole 10b, provide in order to surround thecorrugated tube 34 ofpillar 32 outsides.Describedcorrugated tube 34 extends whenpedestal 30 descends, and shrinks to prevent producing the space betweenpillar 32 and throughhole 10b whenpedestal 30 rises.
Provide a plurality ofstripper pins 38 atsubstrate loading section 31 places, described stripper pin stably supports the lower surface of the glass substrate G that is loaded and is removed, and abovesubstrate loading section 31 glass-guiding substrateG.Stripper pin 38 passessubstrate loading section 31 through being installed as.When hoistingmodule 36 when reducingpedestal 30, the lower end ofstripper pin 38 is pushed by the lower surface ofchamber 10, so that the upper end ofstripper pin 38 is outstanding from the upper surface of substrate loading section 31.As a result, glass substrate G separates with substrate loading section 31.On the contrary, whenpedestal 30 rose,stripper pin 38 moved down, so that glass substrate G closely contacts the upper surface of substrate loading section 31.Therefore,stripper pin 38 forms the space between glass substrate G andsubstrate loading section 31, so that mechanical manipulator (not shown) can easily be caught the glass substrate G that is carried on thesubstrate loading section 31.
As mentioned above, relatively large and heavy according to thepedestal 30 of the 7th or the 8th generation technique, so thatpedestal 30 can descend to bend owing to gravity.In the case, glass substrate G may be therefore curved down.Therefore, can below thesubstrate loading section 31 ofpedestal 30, provide base support 40.Becausesubstrate loading section 31 is slightly greater than glass substrate G, thus fromcentre strut 32 in the radial direction towards the outside ofsubstrate loading section 31, the following curved ofsubstrate loading section 31 becomes serious further.Therefore, providebase support 40 in the outside of thesubstrate loading section 31 ofpedestal 30, describedbase support 40 is separated from one another, and is curved with the substrate loading section that preventspedestal 30 31 times.
Each has described base support 40:head part 41, and it is positioned at the lower surface place nearsubstrate loading section 31; And bar part 42, itspillar 32 that is parallel topedestal 30 extends from described head part 41.The end portion of described bar part 42 is similar topillar 32 and incorporates in the hoisting module 36.Therefore, when hoistingmodule 36 began to operate,base support 40 promoted with pedestal 30.Formcorrugated tube 34a at bar part 42 places.
Fig. 2 is the part enlarged view of the pedestal of contact cooling piece.Fig. 3 is the cross-sectional view of the cooling block of Fig. 2.As mentioned above, when repeating depositing operation, need carry out maintenance and repair work tochamber 10 about glass substrate G.Need be reduced in the temperature that will be heated at least 400℃ pedestal 30 and carry out maintenance and repair work after below 100 ℃ approximately.Therefore,, needcooling base 30 by force, the temperature ofpedestal 30 is reduced to proper temperature so that can be in short period relatively in order to carry out rapidly maintenance and repairwork.Cooling segment 50 is used for this purpose.
Referring to Fig. 1,2 and 3,cooling segment 50 is stacked on thelower surface 11 of chamber 10.Cooling block 50 can not move arbitrarily in the zone of thelower surface 11 of chamber 10.Therefore, use screw rod orcooling block 50 is fixed to thelower surface 11 ofchamber 10 with weldingprocess.Cooling block 50 can be provided as size and equal single ofsubstrate loading section 31, or shown in Figure 4 and 5, is provided as about two pieces ofsubstrate support 40 at the opposite side place.The number of plumber block and size are as long ascooling block 50 can be reduced to the temperature that is heated to about 400℃ pedestal 30 below 100 ℃ rapidly, just not enough.
Referring to Fig. 3,cooling block 50 almost has rectangular shape.Yet the present invention is not limited to this.Because whencooling block 50 had surperficial the contact with the lower surface ofsubstrate loading section 31 in big zone, cooling efficiency was improved, thereby the preferred parallel of upper surface at least ofcooling block 50 forms in the lower surface of describedsubstrate loading section 31.
Cooling block 50 comprisesmain part 51 and thecooling circuit 53 that is provided in the describedmain part 51, and predetermined refrigerant circulates in described cooling circuit 53.Cooling circuit 53 can be configured to a plurality of circuits inmain part 51, and contacts withmain part 51 with big zone.Yet, different with configuration shown in Figure 3, can dispose the single line that cools offcircuit 53 along the side ofmain part 51.
Cooling circuit 53 is provided as pipe, so that refrigerant can flow therein.Described refrigerant can be one in the nitrogen in the water and air method of cooling in the water-cooling method.In air cooling method, mainly use the nitrogen that between gas, has relative higher heat transfer.Yet heat transmitting is similar to the alternative nitrogen of any gas of nitrogen.
The opposite end ofcooling circuit 53 needs separated from one another, so that refrigerant circulates by cooling circuit 53.Coolant supply (not shown) and pump (not shown) by supply coolant are fed to refrigerant anend 53a who cools off circuit 53.Theother end 53b ofcooling circuit 53 need have a structure and discharge through coolant circulating.In the present embodiment, although omitted the detailed description of general structure, as need to adopt any well-known structure aboutcooling circuit 53.
As mentioned above, whenpedestal 30 declines are worked with the maintenance and repair of carrying outchamber 10, comecooling base 30 by contact alongcooling circuit 53 coolant circulating.Yet, when being heated to 400℃ pedestal 30 contact cooling pieces 50 (relatively colder refrigerant flows) with quick heat dissipation in describedcooling block 50, heat dissipates and can impact or because the sudden imbalance of temperature and produce the crack inpedestal 30 topedestal 30 fast.
Therefore,pedestal 30 descend gradually with carry out maintenance and repair work and withcooling block 50 at a distance of predetermined gap, come the inside of filledchamber 10 with in hydrogen and the helium any one, so that comecooling base 30 gradually by gas isheat passage.By hole 24 hydrogen or helium are expelled in thechamber 10, describedhole 24 is formed on the central part office of electrode 16.After being cooled to a certain degree, by being in direct contact withquick cooling base 30 under the situation that does not have thermal stresses.
Operation and function at the chemical vapor depsotition equipment that is used for flat-panel monitor 1 that as above disposes, at first, will by mechanical manipulator move stand sedimentary glass substrate G with a kind of state configuration above thesubstrate loading section 31 ofpedestal 30, in described state,pedestal 30 andbase support 40 are moved down into the bottom ofchamber 10 by thishoisting module 36.
Because the upper end ofstripper pin 38 is projected into predetermined height from the upper surface ofsubstrate loading section 31, thereby mechanical manipulator is placed on glass substrate G on thestripper pin 38 and then withdrawal.When withdrawal during mechanical manipulator, the inner sustain ofchamber 10 is at vacuum state and fill with depositing required rare gas element He or Ar simultaneously.
Then, for depositing operation, operate thishoisting module 36 so thatpedestal 30 andbase support 40 rise together.Then,stripper pin 38 descends and glass substrate G is loaded, and closely contacts the upper surface ofsubstrate loading section 31 simultaneously.Whenpedestal 30 is raised to position shown in Figure 1 haply, stop the operation of thishoisting module 36, and glass substrate G is positioned under the electrode 16.This moment,pedestal 30 is heated to about 400 ℃.
Then, by applying electric power withisolator 26 insulating electrodes 16.Launch silica-based one-tenth segregant and described silica-based one-tenth segregant reaches glass substrate G place bygas distribution plate 17, so that on glass substrate G, carry out deposition with a large amount of apertures.
After the depositing operation of finishing at glass substrate G, in order to carry out the maintenance and repair work ofchamber 10,pedestal 30 descends.Come filledchamber 10 with in hydrogen and the helium any one, and refrigerant circulates in thecooling circuit 53 of cooling block 50.Whenpedestal 30 descends and during the upper surface of the lower surfacecontact cooling piece 50 ofsubstrate loading section 31, transmit the about 400 ℃ heat ofpedestal 30 and described heat by themain part 51 of coolingblock 50 and be dissipated to by coolingcircuit 53 and carry out coolant circulating.
By these a series of heat crimping and transfer processes, thesubstrate loading section 31 ofpedestal 30 can be cooled to below 100 ℃, below 100 ℃ required appropriate temperature.Compare with routine techniques, do like this and can greatly shorten the treatment time.When the temperature withpedestal 30 is reduced to below 100 ℃, the interior exposed ofchamber 10 to extraneous air, and is carried out maintenance and repair work.
According to present embodiment, owing to can in theshort period pedestal 30 be cooled to appropriate temperature by force relatively, thereby can reduce the waiting time of maintenance and repair work.Therefore, operation rate that can improve equipment and productivity, and can prevent the generation of process loss.
Fig. 5 is the part enlarged view according to the chemical vapor depsotition equipment that is used for flat-panel monitor of further embodiment of this invention.In the previous embodiment of Fig. 1, on thelower surface 11 ofchamber 10, pile up cooling block 50.Yet in the present embodiment, groove 11a is formed in thelower surface 11 ofchamber 10, and coolingblock 50 parts are inserted among the described groove 11a.The present embodiment of Fig. 5 can produce effect of the present invention fully.Equally, coolingblock 50 can be buried fully, so that thelower surface 11 of the upper surface of coolingblock 50 andchamber 10 is positioned on the same level.
In the above-described embodiments, the size of coolingblock 50 is similar to or slightly less than substrate loading section 31.Yet, coolingblock 50a can be made into reduced size and be provided on thelower surface 11 of chamber 10.In the case, many coolingblock 50a are installed.In addition, the coolingcircuit 53 that is provided among the coolingblock 50a can be uniline inmain part 51 or be configured to Z-shaped (as shown in Figure 6).
Although illustrate and described the present invention especially with reference to the preferred embodiment of the present invention, but be understood by those skilled in the art that, under the situation that does not break away from the spirit and scope of the invention that defines by appended claims, can make the various variations on form and the details therein.
As mentioned above, according to the present invention, because cooling base thereby can reduce the waiting time of maintenance of the equipment and repair time relatively in the short period base-plate temp being reduced to appropriate level by force.Therefore, improve operation rate and its productivity of equipment, and prevented the generation of process loss.Equally, can reduce the impact that pedestal is caused because quick heat dissipates, and can prevent from pedestal, to produce the crack owing to the sudden imbalance of temperature.

Claims (10)

1, a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, it is characterized in that: described equipment comprises:
Chamber is carried out the depositing operation that is used for described flat-panel screens in described chamber;
Pedestal, it is installed in the described chamber, can promote and have upper surface, loads described flat-panel monitor on described upper surface; And
At least one cooling block, it is provided on the lower surface of described chamber, when described pedestal descends, contacting described pedestal, and cooling heated described pedestal during described depositing operation.
2, equipment according to claim 1, it is characterized in that, wherein before described pedestal descends and contacts described cooling block, fill described chamber with in hydrogen and the helium any one, described gas reduces the temperature of described pedestal gradually, cools off described pedestal fast owing to contact with described cooling block to prevent.
3, equipment according to claim 1 is characterized in that, wherein said pedestal comprises:
The substrate loading section, it flatly is configured in the described chamber and supports described flat-panel monitor; And
Pillar, it has the upper end, and described upper end is fixed on the center of described substrate loading section; And the lower end, the lower wall that described chamber is passed in described lower end to be being configured in described chamber outside,
The upper surface of wherein said cooling block is parallel to the lower surface of described substrate loading section in fact, contacts so that described cooling block has the surface with the described lower surface of described substrate loading section.
4, equipment according to claim 3 is characterized in that, wherein said cooling block comprises:
Main part, it contacts the described lower surface of described chamber; And
The cooling circuit, it is provided in the described main part, and predetermined refrigerant circulates by described cooling circuit.
5, equipment according to claim 4 is characterized in that, wherein during the maintenance and repairs of described chamber, described refrigerant circulates in described cooling circuit.
6, equipment according to claim 4 is characterized in that, wherein said refrigerant is any one in water and the nitrogen.
7, equipment according to claim 4 is characterized in that, it further comprises the base support that supports described pedestal, and wherein said cooling block is provided at the opposite side place about described base support.
8, equipment according to claim 1 is characterized in that, wherein said cooling block is stacked on the described lower surface of described chamber.
9, equipment according to claim 1 is characterized in that, at least a portion of wherein said cooling block is buried in the described lower surface of described chamber, so that expose the described upper surface of described cooling block from the described lower surface of described chamber.
10, equipment according to claim 1 is characterized in that, wherein said flat-panel monitor is the big glass substrate that is used for liquid-crystal display.
CN2007100034722A2006-02-072007-02-05 Chemical Vapor Deposition Equipment for Flat Panel DisplaysExpired - Fee RelatedCN101016622B (en)

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KR1020060011598AKR100738873B1 (en)2006-02-072006-02-07 Chemical Vapor Deposition Equipment for Flat Panel Displays
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN104046961A (en)*2013-03-112014-09-17灿美工程股份有限公司Substrate supporter and substrate processing apparatus including the same
CN111304636A (en)*2018-12-122020-06-19三星显示有限公司Deposition apparatus including heat dissipation member
CN112349620A (en)*2019-08-072021-02-09东京毅力科创株式会社Substrate processing system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
TWI722944B (en)*2020-07-202021-03-21天虹科技股份有限公司Thin-film deposition apparatus and thin-film deposition method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
KR100203780B1 (en)1996-09-231999-06-15윤종용Heat treating apparatus for semiconductor wafer
US6108937A (en)1998-09-102000-08-29Asm America, Inc.Method of cooling wafers
US6635117B1 (en)2000-04-262003-10-21Axcelis Technologies, Inc.Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system

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CN104046961A (en)*2013-03-112014-09-17灿美工程股份有限公司Substrate supporter and substrate processing apparatus including the same
CN104046961B (en)*2013-03-112016-11-23灿美工程股份有限公司Substrate holder and comprise the substrate-treating apparatus of described substrate holder
CN111304636A (en)*2018-12-122020-06-19三星显示有限公司Deposition apparatus including heat dissipation member
CN111304636B (en)*2018-12-122025-01-10三星显示有限公司Deposition apparatus including heat dissipation member
CN112349620A (en)*2019-08-072021-02-09东京毅力科创株式会社Substrate processing system

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CN101016622B (en)2011-11-23
TW200732503A (en)2007-09-01
KR100738873B1 (en)2007-07-12
TWI344997B (en)2011-07-11

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