CN101012548A - Chemical vapor deposition apparatus for flat display - Google Patents
Chemical vapor deposition apparatus for flat displayDownload PDFInfo
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- CN101012548A CN101012548ACNA2007100031207ACN200710003120ACN101012548ACN 101012548 ACN101012548 ACN 101012548ACN A2007100031207 ACNA2007100031207 ACN A2007100031207ACN 200710003120 ACN200710003120 ACN 200710003120ACN 101012548 ACN101012548 ACN 101012548A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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Abstract
Translated fromChinese
Description
Technical field
The present invention relates to a kind of chemical vapor depsotition equipment that is used for flat-panel monitor (flat display), and more particularly, relate to and a kind ofly relatively in the short period pedestal (susceptor) temperature is being cooled to proper level is used for the waiting time of maintain/repair equipment with minimizing the chemical vapor depsotition equipment that is used for flat-panel monitor by force.Therefore, improve productivity, and limited the generation of process loss.
Background technology
Flat-panel monitor has been widely used in for example product of personal portable terminals, televisor and computer monitor.The type of flat-panel monitor is diversified, cathode tube (cathode raytube for example, CRT), liquid-crystal display (liquid crystal display, LCD), Plasmia indicating panel (plasma display panel, PDP) and Organic Light Emitting Diode (organic lightemitting diode, OLED).
CRT or so-called Braun tube (Braun tube) are to be used for by being the equipment that optical imagery forms image with electrical signal conversion, and described conversion is to realize by electron beam is transmitted on the fluorescent surface.Though CRT has high cost performance (value per price), it is quite huge and heavy.
Described LCD is a kind of device, it uses certain photoswitch (photoswitch), by between two thin up and down glass substrate, injecting liquid crystal as the intermediate materials between solid-state and the liquid state, and use the voltage difference between the electrode of up and down glass substrate to change the orientation of liquid crystal molecule, and show character or image.According to driving method LCD is categorized into passive matrix (passive matrix) type and active (active matrix) matrix-type.Described passive matrix type comprises twisted-nematic, and (twisted nematic, TN) type and supertwist are to row (super-twisted nematic, STN) type.Described active matrix type comprise thin film transistor (thin film transistor, TFT).Current velometer and the operating system that is widely used in from electronic product (for example electronic watch, electronic calculator, televisor and laptop computer) to aircraft of LCD.
Described PDP is meant a kind of electronic display unit, injected gas (neon (Ne)+argon gas (Ar) or neon+xenon (Xe)) and by just and apply voltage between the negative potential and produce neon light, so that the neon light that is produced is as display light between preceding and back glass substrate (it is sealed by spacer) wherein.PDP with bigger and clear display capabilities has been used for factory automation, and (factoryautomation is FA) or as the indicating meter of vending machine or fuel oil injection measurement table.Recently, PDP is effective to televisor.PDP is favourable, because its response speed is very fast, reliability is higher and its time limit of service is longer.
The OLED that is called as organic diode or organic EL means the luminous organic materials, and described material makes self luminous by using electro optical phenomenon, and wherein when applying electric current, it is luminous that fluorescence organic is learned thing.OLED can drive and be made into thin type under low voltage.Equally, because OLED has broad visual angle and very fast response speed, thereby when the beholder watched screen from the side, picture quality did not change and is retained on the screen without any sub-image (latent image), and this is different from LCD or PDP.Therefore, OLED is mainly used in miniscope, for example mobile telephone, automobile audio system or digital camera.OLED is evident as one in the indicating meter of future generation.
All CRT, LCD, PDP and OLED can be defined as flat-panel monitor.Therefore, flat-panel monitor is not limited to any one among CRT, LCD, PDP and the OLED.Yet, below describe content and concentrate on the LCD that is widely used in the most industrial fields.
At present, except being used for the small sized personal portable terminal, also be widely used in televisor or computer monitor as the LCD of flat-panel monitor.Televisor has the size that 20 to 30 inches size and watch-dog have less than 17 inches has become main flow.Yet more and more preference has 40 inches or larger sized televisor and has 20 inches or larger sized computer monitor recently.
Therefore, LCD manufacturers has attempted producing bigger glass substrate.At present, carry out many researchs come at have 1950 * 2250mm or 1870 * 2200mm size the 7th generation product have 2160 * 2460mm or larger sized the 8th generation product increase the size of glass substrate.This is because of the increase along with glass substrate size, can obtain the more display panel that is used for televisor or computer monitor of more number from single glass substrate.
Mainly make LCD by TFT technology, cell process and module process.Described TFT technology is very similar to semiconductor fabrication process.In TFT technology, repeated deposition, photoetching and be etched with and on glass substrate, dispose thin film transistor.Under about 1000 ℃ temperature condition, carry out semiconductor technology, and under about 400 ℃, carry out TFT technology.Therefore, TFT technology is more complicated than semiconductor technology.
In described cell process, forming oriented film (orientation film) on substrate and the last substrate down as colour filter (color filter), and described down substrate and last substrate are made in TFT technology, and by configuration partition (spacer) and carry out sealing and print and assemble upper and lower substrate and make it adhering to each other.
In described module process, the panel that will polarize is attached to completed LCD panel and drive IC is installed thereon.Then, (printed circuit board PCB), and is assemblied in backlight and other parts on the rear surface of LCD, to finish product assembled printed circuit boards.
As mentioned above, begin LCD production to be finished product from corresponding chambers, making big glass substrate by many technologies.Therefore, when in each technology, producing error or satisfy, LCD can not be produced and be finished product the requiring of each technology.
In the middle of the chamber of carrying out above technology, the chamber of carrying out chemical vapor deposition method exists as one in the TFT technology.In chemical vapor deposition method, the high-octane reactant gas ion that has under the plasma state is expelled on the glass substrate with above being deposited on by gas distribution plate (gasdistribution plate) by external high frequency power.This technology is carried out therein in the chamber of chemical vapor deposition method and is carried out.
As will describing after a while, provide pedestal (on described pedestal, load and stand sedimentary glass substrate) at the lower region of the chamber that is used for carrying out chemical vapor deposition method, and provide electrode in the zone at an upper portion thereof.As mentioned above, the glass substrate according to the 7th or the 8th generation technique is heavy and bigger relatively glass substrate.Therefore, when described big glass substrate was placed on the described pedestal, glass substrate and pedestal were all curved down.Therefore, the lower surface of some base support supporting bases is to prevent that pedestal and big glass substrate are owing to the weight of glass substrate is descended to bend.
When on the upper surface that glass substrate is carried in pedestal, pedestal is heated to about 400 ℃ temperature.Then, pedestal rises glass substrate is positioned near the gas distribution plate place that is positioned at the electrode below.Then, apply electric power, make described electrode and chamber insulation by using Teflon (Teflon) as insulating component by electrode.When the gas distribution plate with many apertures is passed in the gas injection, carry out depositing operation about glass substrate.This process quilt be called chemical vapour deposition (chemicalvapor deposition, CVD).
After the depositing operation that repeats about glass substrate, the various parts in the chamber (surrounding structure that comprises chamber) need maintenance and repair work.After the temperature that is heated to about 400 ℃ pedestal is reduced to below 100 ℃ and is exposed to chamber in the air, carry out maintenance and repair work.
Yet, be used for the conventional chemical vapor deposition apparatus of flat-panel monitor, owing to need about temperature that will be heated to about 400 ℃ pedestal in 24 hours to be reduced to about below 100 ℃ usually, thereby have a problem, promptly need the plenty of time to reduce base-plate temp to carry out maintenance and repair work.This is because only undertaken heat passage by the radiation under the vacuum state in chamber interior.
That is to say, in routine techniques because in order to carry out maintenance and repair work, need base-plate temp was reduced to from about 400 ℃ in about 24 hours about below 100 ℃, thereby the waiting time that is used for maintenance and repair work prolonged.Therefore, reduced the operation rate of equipment, and thereby productivity is descended, thereby produced process loss.
Summary of the invention
In order to solve above and/or other problem, the invention provides a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, its by force cooling base relatively in the short period base-plate temp is being reduced to proper level, make and to reduce the waiting time that is used for maintenance and repair work, the operation rate that can improve equipment and its productivity, and can prevent the generation of process loss.
The invention provides a kind of chemical vapor depsotition equipment that is used for flat-panel monitor, it can reduce the impact that pedestal is caused because quick heat dissipates, and prevents to produce the crack owing to the sudden imbalance of temperature in pedestal.
According to an aspect of the present invention, a kind of chemical vapor depsotition equipment that is used for flat-panel monitor comprises: pedestal, and it is installed in the chamber and has upper surface, loads on described upper surface and stands sedimentary flat-panel monitor; And cooling segment, it is buried at least a portion of described pedestal and cools off heated pedestal during depositing operation by force.
Described pedestal comprises: the substrate loading section, and it flatly is configured in the chamber and support flat panel display; And pillar, its upper end is fixed on the center of described substrate loading section, and its lower end passes the lower wall of chamber and be configured in the chamber outside, and wherein said cooling segment is buried in the internal surface of substrate loading section.
Described cooling segment comprises: the cooling space part, and it is formed in the substrate loading section; And the cooling circuit, it is inserted in the described cooling space part, and predetermined refrigerant circulates by described cooling circuit.
At the maintenance and repair on period of chamber, described refrigerant circulates by described cooling circuit.
The cooling circuit has loop shape (loop shape), and described loop shape is configured in the whole zone of substrate loading section.
The cooling line configuring is between heater line, and described heater line is provided in the substrate loading section and at depositing operation heating substrate loading section.
Described equipment further comprises contact member, and described contact member is provided between the outside surface and substrate loading section of cooling circuit, and each of contact cooling circuit and substrate loading section.
Described contact member is a metal wire, and it is wrapped in the external surface peripheral of cooling circuit.
The material of described metal wire be stainless steel (stainless steel, STS).
Described predetermined refrigerant is any one in water and the nitrogen.
Described flat-panel monitor is to be used for liquid-crystal display (liquid crystal display, big glass substrate LCD).
Description of drawings
To be more readily understood above and other feature and advantage of the present invention by describing the preferred embodiments of the present invention with reference to the accompanying drawings in detail, in the accompanying drawings:
Fig. 1 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to an embodiment of the invention.
Fig. 2 is that the part of the substrate loading section of pedestal is amplified longitudinal section.
Fig. 3 is that the part of the substrate loading section of pedestal is amplified cross-sectional view.
Fig. 4 is that the part of substrate loading section of pedestal that is used for the chemical vapor depsotition equipment of flat-panel monitor is according to another embodiment of the present invention amplified longitudinal section.
10: chamber 16: electrode
17: gas distribution plate 26: isolator
30: pedestal 31: the substrate loading section
33a, 33b: heater line 40: sole plate supports part
41: head part 42: the bar part
50,50a: cooling segment 52: cooling space part
54:cooling circuit
Embodiment
Illustrate that with reference to being used to the accompanying drawing of the preferred embodiment of the present invention is in order to fully understand the present invention, its advantage and the purpose that realizes by enforcement the present invention.
Hereinafter, will describe the present invention in detail by explaining the preferred embodiments of the present invention with reference to the accompanying drawings.Similar reference numeral in the accompanying drawing is meant similar elements.
Fig. 1 explanation is used for the structure of the chemical vapor depsotition equipment of flat-panel monitor according to an embodiment of the invention.With reference to figure 1, the chemical vapor depsotition equipment 1 that is used for flat-panel monitor comprises:chamber 10; Electrode 16, it is provided in the top of describedchamber 10 and to standing the predetermined reactant gas ion of sedimentary flat-panel monitor G emission;Pedestal 30, it is configured inelectrode 16 belows and loads described flat-panel monitor G on describedpedestal 30; And a plurality ofbase support 40, it is from thedownside supporting base 30 ofpedestal 30.
From the outer wall ofoutside seal chamber 10, with the vacuum state of the deposition space S that keepschamber 10 inside.With the deposition space S of rare gas element (for example He or Ar) filledchamber 10, not influence the reactant gas ion, described reactant gas ion is the deposition material that is produced by electrode 16.In the outer wall ofchamber 10, form and open 10a, make flat-panel monitor G can pass described opening 10a.Valve (not shown) is assembled into out 10a.
According to the present invention, flat-panel monitor G is meant cathode tube (cathode ray tube, CRT), liquid-crystal display (liquid crystal display, LCD), Plasmia indicating panel (plasmadisplay panel, PDP) and Organic Light Emitting Diode (organic light emitting diode, OLED) in any one.Yet in the present embodiment, the big glass substrate g that is used for LCD is taken as flat-panel monitor G.Speech " greatly " mean the aforesaid the 7th or the 8th generation product size.In the following description, flat-panel monitor G is described to glass substrate G.
Provideremote plasma 18 abovechamber 10 outsides, the predetermined purge gas of its supply is to remove the impurity that exists in the chamber 10.Highfrequency power unit 20 is installed around remote plasma 18.Described highfrequency power unit 20 is connected toelectrode 16 by wire 22.Between the outer wall ofelectrode 16 andchamber 10, provideisolator 26, being electrically connected between the outer wall that preventselectrode 16 andchamber 10, whenelectrode 16 directly described electrical connection can take place during the outer wall of contact chambers 10.Can makeisolator 26 by using (for example) Teflon.In the internal surface ofelectrode 16, form waste gas cushioning pocket part (not shown).
Whenpedestal 30 is raisedmodule 36 and promotes, between thepillar 32 ofpedestal 30 and throughhole 10b, must not produce any space.Therefore, around throughhole 10b, provide in order to surround the corrugated tube (bellows pipe) 34 ofpillar 32 outsides.Describedcorrugated tube 34 extends whenpedestal 30 descends, and shrinks to prevent producing the space betweenpillar 32 and throughhole 10b whenpedestal 30 rises.
A plurality of lifting tips (lift pin) 38 are provided atsubstrate loading section 31 places, and the described lifting tip stably supports the lower surface of the glass substrate G that is loaded and is removed, and abovesubstrate loading section 31 glass-guiding substrate G.Thelifting tip 38 passessubstrate loading section 31 through being installed as.When hoistingmodule 36 reducedpedestal 30, the lower end of thelifting tip 38 was pushed by the lower surface ofchamber 10, so that the upper end of thelifting tip 38 is outstanding from the upper surface of substrate loading section 31.As a result, glass substrate G separates with substrate loading section 31.On the contrary, whenpedestal 30 rose, thelifting tip 38 moved down (as shown in Figure 1), so that glass substrate G closely contacts the upper surface of substrate loading section 31.Therefore, thelifting tip 38 forms the space between glass substrate G andsubstrate loading section 31, so that mechanical manipulator (not shown) can easily be caught the glass substrate G that is carried on thesubstrate loading section 31.
As mentioned above, relatively large and heavy according to thepedestal 30 of the 7th or the 8th generation technique, so thatpedestal 30 can descend to bend owing to gravity.In the case, glass substrate G may be therefore curved down.Therefore, can below thesubstrate loading section 31 ofpedestal 30, provide base support 40.Becausesubstrate loading section 31 is slightly greater than glass substrate G, thus fromcentre strut 32 in the radial direction towards the outside ofsubstrate loading section 31, the following curved ofsubstrate loading section 31 becomes serious further.Therefore, providebase support 40 in the outside of thesubstrate loading section 31 ofpedestal 30, describedbase support 40 is separated from one another, and is curved with the substrate loading section that preventspedestal 30 31 times.
Each has described base support 40:head part 41, and it is positioned at the lower surface place nearsubstrate loading section 31; Andbar part 42, itspillar 32 that is parallel topedestal 30 extends from described head part 41.The end portion of describedbar part 42 is similar topillar 32 to be incorporated in the hoisting module 36.Therefore, when hoistingmodule 36 began to operate,base support 40 promoted with pedestal 30.Formcorrugated tube 34a atbar part 42 places.
Fig. 2 is that the part of the substrate loading section of pedestal is amplified longitudinal section.Fig. 3 is that the part of sectional view of the substrate loading section of pedestal is amplified cross-sectional view.As mentioned above, when repeating depositing operation, need carry out maintenance and repair work tochamber 10 about glass substrate G.Need be reduced in the temperature that will be heated at least 400℃ pedestal 30 and carry out maintenance and repair work after below 100 ℃ approximately.Therefore,, needcooling base 30 by force, the temperature ofpedestal 30 is reduced to proper temperature so that can be in short period relatively in order to carry out rapidly maintenance and repairwork.Cooling segment 50 is used for this purpose.
Can provide describedcooling segment 50 atsubstrate loading section 31 andpillar 32 both places of forming pedestal 30.Yet, consider cost efficiency, preferably providecooling segment 50, shown in Fig. 2 and 3 atsubstrate loading section 31 places.Equally, coolingsegment 50 can be coupled to the lower surface or the side surface of substrate loading section 31.Yet, shown in Fig. 2 and 3, preferably be installed in thesubstrate loading section 31 by coolingsegment 50 is buried in thesubstrate loading section 31.
At the maintenance and repair on period ofchamber 10, as above PeiZhi cooling segment 50 cools offheated pedestal 30 by force.Described cooling means that the temperature with 400 ℃ is reduced to below 100℃.Cooling segment 50 comprises: coolingspace part 52, and it is formed in thesubstrate loading section 31 ofpedestal 30; And coolingcircuit 54, it is inserted in thecooling space part 52 so that predetermined refrigerant (coolant) circulates.
The opposite end of coolingcircuit 54 needs separated from one another, so that refrigerant circulates by cooling circuit 54.Coolant supply (not shown) and pump (not shown) by supply coolant are fed to refrigerant at an end that cools off circuit 54.The other end of coolingcircuit 54 need have a structure and discharge through coolant circulating.In the present embodiment, omitted detailed description, but as needed well-known structure can be provided about the general structure of coolingcircuit 54.
Coolingcircuit 54 has loop shape, and described loop shape is configured in the whole zone ofsubstrate loading section 31, as shown in Figure 3.Yet, can adopt different structure (for example, zig-zag (zigzag) structure of similar boi1er tube (boiler pipe)).Can adopt the structure of any structure of the cooling efficiency that can cover the big regional ofsubstrate loading section 31 and improvepedestal 30 as cooling circuit 54.In the present embodiment, the coolingcircuit 54 of loop shape is configured betweenheater line 33a and the 33b, and described heater line is at depositing operation heatingsubstrate loading section 31.
Simultaneously, when the outside surface of coolingcircuit 54 directly contacted thesubstrate loading section 31 ofpedestal 30, coolingbase 30 more quickly.Yet, when coolingcircuit 54 directly contact be heated to about 400℃ pedestal 30 substrate loading section 31 (refrigerant be similar to or subambient temperature under circulate by cooling circuit 54) time, may there be a problem, promptly insubstrate loading section 31, produces crack or impact owing to the sudden imbalance of temperature.
Therefore, in the present embodiment, in order to prevent to cool off directly contactsubstrate loading section 31 ofcircuit 54, can further providecontact member 56 on the outside surface of coolingcircuit 54, it allows by a part of minimum degree ground contactsubstrate loading section 31 of the outside surface of coolingcircuit 54cooling circuit 54 to be contacted with each other withsubstrate loading section 31.
The type ofcontact member 56 can change.In the present embodiment, metal wire is as contact member 56.That is to say, twine metal wire by the external surface peripheral at coolingcircuit 54, coolingcircuit 54 andsubstrate loading section 31 contact with each other with Minimum Area.As shown in Figure 2, whenmetal wire 56 was wrapped in the external surface peripheral of coolingcircuit 54,metal wire 56 is contactsubstrate loading section 31 in the Minimum Area that is designated as " A " only.Therefore, in the process of coolingbase 30, can reduce owing to quick heat dissipates being applied to the impact ofpedestal 30, and can prevent frompedestal 30, to produce the crack owing to the sudden imbalance oftemperature.Metal wire 56 can be made by stainless steel SUS.
Operation and function at the chemical vapor depsotition equipment that is used for flat-panel monitor 1 that as above disposes, at first, will by mechanical manipulator move stand sedimentary glass substrate G with a kind of state configuration above thesubstrate loading section 31 ofpedestal 30, in described state,pedestal 30 andbase support 40 are moved down into the lower section ofchamber 10 by hoistingmodule 36.
Because the upper end of the liftingtip 38 is projected into predetermined height from the upper surface ofsubstrate loading section 31, thereby mechanical manipulator is placed on glass substrate G on the liftingtip 38 and then withdrawal.When withdrawal during mechanical manipulator, the inner sustain ofchamber 10 is at vacuum state and fill with depositing required rare gas element He or Ar simultaneously.
Then, for depositing operation, operate hoistingmodule 36 so thatpedestal 30 andbase support 40 rise together.Then, the liftingtip 38 descends and glass substrate G is loaded and the tight upper surface of contactsubstrate loading section 31 simultaneously.Whenpedestal 30 is raised to position shown in Figure 1 haply, stop the operation of hoistingmodule 36, and glass substrate G is located immediately atelectrode 16 belows.This moment, whenheater line 33a that provides atpedestal 30 places and 33b radiations heat energy,pedestal 30 is heated to about 400 ℃.
Then, operation high frequency power unit 20.Therefore, be in isoionic state and have high-octane reactant gas ion, and described reactant gases ion arrives glass substrate G place by thegas distribution plate 17 with a large amount of apertures, so that execution deposits on glass substrate G byelectrode 16 emission.
After the depositing operation of finishing at glass substrate G, in order to carry out the maintenance and repair work ofchamber 10, refrigerant circulates by the coolingroute 54 of cooling segment 50.Therefore, being formed on heat in thesubstrate loading section 31 of thepedestal 30 with about 400 ℃ temperature is passed to metal wire 56 (it is the contact member of contact substrate loading section 31) and dissipates by coolant circulating in coolingcircuit 54.
By these a series of heat transfer process, thesubstrate loading section 31 ofpedestal 30 can be cooled to below 100 ℃, below 100 ℃ required appropriate temperature.Do like this and can greatly shorten the treatment time.When the temperature withpedestal 30 is reduced to below 100 ℃, the interior exposed ofchamber 10 to extraneous air, and is carried out maintenance and repair work.
According to present embodiment, owing to can in theshort period pedestal 30 be cooled to appropriate temperature by force relatively, thereby can reduce the waiting time of maintenance and repair work.Therefore, operation rate that can improve equipment and productivity, and can prevent the generation of process loss.
Fig. 4 is that the part of substrate loading section of pedestal that is used for the chemical vapor depsotition equipment of flat-panel monitor is according to another embodiment of the present invention amplified longitudinal section.Formerly among the embodiment,metal wire 56 is wrapped in the external surface peripheral of coolingcircuit 54, to form cooling segment 50.Yet in the present embodiment, as shown in Figure 4,metallic contact member 56a (non-metal wire 56) is attached to the outside surface of coolingcircuit 54 in addition, to form cooling segment 50a.Because coolingcircuit 54 does not directly contact thesubstrate loading section 31 ofpedestal 30, but is connected tosubstrate loading section 31 bycontact member 56a, thereby can the heat ofpedestal 30 be delivered to refrigerant in thecooling circuit 54 bycontact member 56a.
Therefore, can reduce the impact thatsubstrate loading section 31 is caused because quick heat dissipates, and can prevent from thesubstrate loading section 31 ofpedestal 30, to produce the crack owing to the sudden imbalance of temperature.
Although illustrate and described the present invention especially with reference to the preferred embodiment of the present invention, but be understood by those skilled in the art that, under the situation that does not break away from the spirit and scope of the invention that defines by appended claims, can make the various variations on form and the details therein.
As mentioned above, according to the present invention, because cooling base thereby can reduce the waiting time of maintenance of the equipment and repair time relatively in the short period base-plate temp being reduced to appropriate level by force.Therefore, improve operation rate and its productivity of equipment, and prevented the generation of process loss.Equally, can reduce the impact that pedestal is caused because quick heat dissipates, and can prevent from pedestal, to produce the crack owing to the sudden imbalance of temperature.
Claims (11)
1, a kind of chemical vapor depsotition equipment is used for flat-panel monitor, and described chemical vapor depsotition equipment comprises:
Pedestal is installed in the chamber and has upper surface, loads on described upper surface and stands sedimentary described flat-panel monitor; And
Cooling segment is buried at least a portion of described pedestal and cools off heated described pedestal during depositing operation by force.
2, chemical vapor depsotition equipment according to claim 1, wherein said pedestal comprises:
The substrate loading section flatly is configured in the described chamber and supports described flat-panel monitor; And
Pillar has the upper end of the center that is fixed on described substrate loading section and passes the lower wall of described chamber and be configured in the lower end of described chamber outside,
Wherein said cooling segment is buried in the internal surface of described substrate loading section.
3, chemical vapor depsotition equipment according to claim 2, wherein said cooling segment comprises:
The cooling space part is formed in the described substrate loading section; And
The cooling circuit is inserted in the described cooling space part, and predetermined refrigerant circulates by described cooling circuit.
4, chemical vapor depsotition equipment according to claim 3, wherein during the maintenance and repairs of described chamber, described refrigerant circulates by described cooling circuit.
5, chemical vapor depsotition equipment according to claim 4, wherein said cooling circuit has loop shape, and described loop shape is configured in the whole zone of described substrate loading section.
6, chemical vapor depsotition equipment according to claim 5, wherein said cooling line configuring are between heater line, and described heater line is provided in the described substrate loading section, and at the described substrate loading section of described depositing operation heating.
7, chemical vapor depsotition equipment according to claim 3, further comprise contact member, described contact member is provided between the outside surface and described substrate loading section of described cooling circuit, and contacts in described cooling circuit and the described substrate loading section each.
8, chemical vapor depsotition equipment according to claim 7, wherein said contact member is a metal wire, described metal wire is wrapped in the described external surface peripheral of described cooling circuit.
9, chemical vapor depsotition equipment according to claim 8, the material of wherein said metal wire is a stainless steel.
10, chemical vapor depsotition equipment according to claim 3, wherein Yu Ding described refrigerant is one of them in water and the nitrogen.
11, chemical vapor depsotition equipment according to claim 1, wherein said flat-panel monitor are the big glass substrate that is used for liquid-crystal display.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060009617AKR100764627B1 (en) | 2006-02-01 | 2006-02-01 | Chemical Vapor Deposition Equipment for Flat Panel Displays |
| KR1020060009617 | 2006-02-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101012548Atrue CN101012548A (en) | 2007-08-08 |
| CN100582300C CN100582300C (en) | 2010-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710003120AExpired - Fee RelatedCN100582300C (en) | 2006-02-01 | 2007-01-31 | Chemical vapor deposition apparatus for flat display |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100764627B1 (en) |
| CN (1) | CN100582300C (en) |
| TW (1) | TWI344174B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101138209B1 (en)* | 2010-08-04 | 2012-05-10 | 주식회사 동원파츠 | Substrate heating device with cooling means |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3605550B2 (en)* | 1999-07-19 | 2004-12-22 | 東京エレクトロン株式会社 | Substrate heat treatment apparatus and temperature control method |
| DE10007059A1 (en)* | 2000-02-16 | 2001-08-23 | Aixtron Ag | Method and device for producing coated substrates by means of condensation coating |
| KR100448462B1 (en)* | 2002-03-23 | 2004-09-13 | 황상동 | Multi stage system and method for baking and cooling of semi-conductive wafer |
| KR100534024B1 (en)* | 2003-03-13 | 2005-12-07 | 세메스 주식회사 | Bake apparatus and baking method for manufacturing semiconductor devices |
| KR100532322B1 (en)* | 2003-06-04 | 2005-11-29 | 삼성전자주식회사 | Cooling unit for wafer baking plate |
- 2006
- 2006-02-01KRKR1020060009617Apatent/KR100764627B1/ennot_activeExpired - Fee Related
- 2007
- 2007-01-31CNCN200710003120Apatent/CN100582300C/ennot_activeExpired - Fee Related
- 2007-02-01TWTW096103674Apatent/TWI344174B/ennot_activeIP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070079150A (en) | 2007-08-06 |
| KR100764627B1 (en) | 2007-10-08 |
| CN100582300C (en) | 2010-01-20 |
| TW200737312A (en) | 2007-10-01 |
| TWI344174B (en) | 2011-06-21 |
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