CN100557773C - Heat treatment device - Google Patents
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- CN100557773C CN100557773CCNB2006800012924ACN200680001292ACN100557773CCN 100557773 CCN100557773 CCN 100557773CCN B2006800012924 ACNB2006800012924 ACN B2006800012924ACN 200680001292 ACN200680001292 ACN 200680001292ACN 100557773 CCN100557773 CCN 100557773C
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Abstract
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Technical field
The present invention relates to by the light of irradiations such as semiconductor wafer heating usefulness being stipulated annealing device, computer program and the storage medium of heat treated vane type.
Background technology
Generally, in order to make semiconductor device,, make desired device by semiconductor wafer being carried out repeatedly the various heat treatments of film forming processing, pattern etching processing, oxide-diffused processing, modification processing, annealing in process etc.Along with densification, the multiple stratification and highly integrated of semiconductor device, its manufacture method is strict more year by year, special uniformity and the film quality of wishing to improve in these various heat treated wafer face.For example describe, in this channel layer, behind the ion of implanted dopant atom, turn to purpose, carry out annealing in process usually so that atomic structure is stable with the example that is treated to as the transistorized channel layer of semiconductor device.
In this case, carry out above-mentioned annealing in process for a long time, make the atomic structure stabilisation, be penetrated into the below because foreign atom is diffused into the depths, the inside along film thickness direction, so need carry out in the short time at the utmost point.That is,, need make semiconductor wafer rise to high temperature at high speed, and after annealing in process, be reduced to the low temperature that does not take place to spread at high speed for one side does not penetrate the thin one side of thickness of channel layer etc. and makes the atomic structre stabilisation.
In order to carry out such annealing in process, in existing processing unit, generally use the lamp annealing (patent documentation 1) of heating lamp.
In addition, as other existing processing unit, for example can be the processing unit shown in thepatent documentation 2, amber ear card (Peltier) element promptly is set on wafer station, when when about 100～250 ℃ wafer being carried out etching, when the lifting temperature with the processing unit of above-mentioned Peltier's element.
And, recently, realize bigger output because develop, so there is the optical semiconductor that uses LED element or laser diode etc. to penetrate the tendency (patent documentation 3～5) of element (semiconductor light-emitting elements) as heating source or light source.Because in this LED element and laser diode, the heating of element itself is compared considerably less with heating lamp, and the life-span length of comparing with heating lamp, so there are a large amount of tendencies of using them.
For example inpatent documentation 3, disclosed lamp with heat pipe (heat pipe) and the use of LED elements combination; Inpatent documentation 4, disclosed situation with LED element and laser diode heating resist; And, in patent documentation 5, disclosed in order to carry out CVD and handled the situation of using the LED element arrays.
No. the 5689614th, [patent documentation 1] United States Patent (USP)
[patent documentation 2] TOHKEMY 2001-85408 communique
[patent documentation 3] TOHKEMY 2004-296245 communique
[patent documentation 4] TOHKEMY 2004-134674 communique
No. the 6818864th, [patent documentation 5] United States Patent (USP)
But, as mentioned above, when heat-treating, only need so that the mode of the uniformity of temperature profile of wafer surface heats, particularly, when carrying out oxide-diffused when handling, need carry out lifting to chip temperature at short notice from the reason of the impurity excess diffusion that prevents to inject etc.
And, in above-mentioned disclosed existing apparatus, for example use under the situation of LED element, can be same with the lamp heating, the continuation of carrying out wafer heats up, and because different with the lamp heating, element itself can be by excessive heat, therefore can be with the cooling of carrying out wafer at a high speed to a certain degree.
But, when the design standard that makes live width and thickness etc. is severeer, require wafer in above-mentioned existing apparatus, to exist the problem that the sort of high speed corresponding with new design standard lowered the temperature that is difficult to carry out with the faster speed operation of lowering the temperature.
Summary of the invention
The present invention is conceived to above such problem, has proposed the scheme that addresses these problems effectively.The object of the present invention is to provide efficiency of heating surface height, and annealing device, computer program and the storage medium that can heat up more at high speed and lower the temperature.
The present invention is a kind of annealing device, possesses in the heat treated annealing device of regulation in that handled object is implemented: container handling that can exhaust; Be arranged in the above-mentioned container handling, in the above the mounting table of the above-mentioned handled object of side mounting; The a plurality of thermoelectric conversion elements that are provided with on above-mentioned mounting table top; The light transmission window at the top of the above-mentioned container handling of bubble-tight covering; In above-mentioned container handling, import the gas introduction unit of necessary gas; With, be arranged on above-mentioned light transmission window the top, penetrate heating by the light transmission window to above-mentioned handled object and use up, and by containing the heating unit that a plurality of heated light sources that optical semiconductor penetrates element constitute respectively.
Like this, a plurality of thermoelectric conversion elements are set on mounting table, optical semiconductor is set above it penetrates element, when the heating handled object, flow through in thermoelectric conversion element towards the electric current and the connection optical semiconductor ejaculation element of the heating direction of handled object, the light that penetrates heating usefulness from this element heats handled object; When cooling, in thermoelectric conversion element, flow through towards the electric current of the cooling direction of handled object and penetrate element and disconnect with optical semiconductor.Therefore, compare with the lamp heating, efficiency of heating surface height, and can heat up with higher speed and lower the temperature.
Annealing device of the present invention is characterised in that, near above-mentioned each heated light sources, is respectively arranged with the light of reflection from this heated light sources, makes its first reflector towards above-mentioned handled object.
Annealing device of the present invention is characterised in that, sets the reverberation from above-mentioned each first reflector, and it is converged towards the zones of different of above-mentioned handled object respectively.
Annealing device of the present invention is characterised in that the reflecting surface of above-mentioned first reflector is configured as the curved surface shape.
Annealing device of the present invention is characterised in that above-mentioned each heated light sources has the element mounting bar that heat pipe constitutes, and above-mentioned optical semiconductor penetrates the leading section that element is installed in this element mounting bar.
Annealing device of the present invention is characterised in that above-mentioned heating unit has the element installation that covers above-mentioned light transmission window top and uses shell, the base portion of above-mentioned each element mounting bar to be supported on the said elements installation with on the shell.
Annealing device of the present invention is characterised in that, said elements is installed and used shell, is configured as dome-shapedly, and its inboard constitutes by being configured as the curved reflecting surface that works as second reflector.
Annealing device of the present invention is characterised in that, installs with in the shell at said elements, is provided with the element cooling unit of the base portion side that is used to cool off the said elements mounting bar.
Annealing device of the present invention is characterised in that above-mentioned each element mounting bar is along vertical direction or the direction setting approximate with vertical direction.
Annealing device of the present invention is characterised in that, has the radiation thermometer of the temperature that is used to measure above-mentioned handled object, sets the mensuration wavelength band territory of this radiation thermometer, makes them different with the light wavelength band territory of penetrating element from above-mentioned optical semiconductor.
Annealing device of the present invention is characterised in that above-mentioned optical semiconductor penetrates element and is made of LED element or semiconductor Laser device.
Annealing device of the present invention is characterised in that, above-mentioned heating unit has the element installation shell that covers above-mentioned light transmission window top, this element installation constitutes smooth element installed surface with the following of shell in the mode relative with above-mentioned mounting table, and the optical semiconductor that this element installed surface is provided with above-mentioned a plurality of heated light sources penetrates element.
Annealing device of the present invention is characterised in that, is provided with the zone that optical semiconductor penetrates element in the said elements installed surface, greater than the projected area that is positioned in the above-mentioned handled object on the above-mentioned mounting table.
Annealing device of the present invention is characterised in that, above-mentioned optical semiconductor penetrates element, and every defined amount is installed in 1 little element and is provided with on the substrate, by unitary element substrate and the optical semiconductor corresponding with it is set and penetrates element and constitute by the module of blocking.
Annealing device of the present invention is characterised in that each element is provided with substrate, and heat conductivity good metal material forming is a section recess shape.
Annealing device of the present invention is characterised in that, the element that is installed in each module be provided with a plurality of optical semiconductors on the substrate penetrate elements respectively electricity be connected in series.
Annealing device of the present invention is characterised in that, said elements is installed surface that element installed surface and/or said elements with shell be provided with substrate and formed reflecting surface respectively and work as reflector.
Annealing device of the present invention is characterised in that above-mentioned optical semiconductor penetrates element and is made of LED element or semiconductor Laser device.
Annealing device of the present invention is characterised in that above-mentioned optical semiconductor penetrates element and is made of led chip or semiconductor laser chip.
Annealing device of the present invention is characterised in that it is the surface-emitting type element that above-mentioned optical semiconductor penetrates element.
Annealing device of the present invention is characterised in that, above-mentioned a plurality of optical semiconductors is penetrated element region be divided into a plurality of zones (zone), can control independently each zone.
Annealing device of the present invention is characterised in that, near above-mentioned a plurality of thermoelectric conversion elements, the thermal medium stream that flows through thermal medium is set in case of necessity.
Annealing device of the present invention is characterised in that, above-mentioned annealing device has the control unit of the action that is used to control this annealing device integral body, this control unit is controlled, make: when the above-mentioned handled object of heating, connect above-mentioned heating unit, and in above-mentioned thermoelectric conversion element, flow through the electric current that above-mentioned handled object is heated through the thermoelectric conversion element control part, when the above-mentioned handled object of cooling, cut off above-mentioned heating unit, and in above-mentioned thermoelectric conversion element, flow through the electric current that above-mentioned handled object is cooled off through the thermoelectric conversion element control part.
Annealing device of the present invention is characterised in that in the heat treated annealing device that handled object is applied regulation, to possess: container handling that can exhaust; Be arranged in the above-mentioned container handling, be used for the mounting table of the above-mentioned handled object of side mounting in the above; The downside heating unit that above-mentioned handled object is heated is set below above-mentioned mounting table or above-mentioned mounting table; The light transmission window at the top of the above-mentioned container handling of bubble-tight covering; In above-mentioned container handling, import the gas introduction unit of necessary gas; With, be arranged on the top of above-mentioned light transmission window, by the light transmission window, penetrate the light of heating usefulness, and contain the heating unit that a plurality of heated light sources that optical semiconductor penetrates element constitute respectively to above-mentioned handled object.
Annealing device of the present invention is characterised in that, above-mentioned downside heating unit is made of in a plurality of thermoelectric conversion elements, resistance heater or the heating lamp any.
Annealing device of the present invention is characterised in that, above-mentioned annealing device has the control unit of the action that is used to control this annealing device integral body, this control unit is controlled, make: when the above-mentioned handled object of heating, connect above-mentioned downside heating unit, above-mentioned handled object is preheated set point of temperature, after this, connect above-mentioned heater block, make above-mentioned handled object be warmed up to the predetermined process temperature.
The invention provides a kind of computer program, control when using annealing device that handled object is implemented the heat treatment of regulation, this annealing device is implemented the heat treatment of regulation to handled object, possesses: container handling that can exhaust; Be arranged in the above-mentioned container handling, be used for the mounting table of the above-mentioned handled object of side mounting in the above; The a plurality of thermoelectric conversion elements that are provided with on above-mentioned mounting table top; The light transmission window at the top of the above-mentioned container handling of bubble-tight covering; In above-mentioned container handling, import the gas introduction unit of necessary gas; With the top that is arranged on above-mentioned light transmission window, penetrate heating by the light transmission window to above-mentioned handled object and use up, and by containing a plurality of heating units that heated light sources that optical semiconductor penetrates element constitutes respectively, described computer program is controlled, make: when the above-mentioned handled object of heating, connect above-mentioned heating unit, and make the electric current of the above-mentioned handled object of heating flow through above-mentioned thermoelectric conversion element, when the above-mentioned handled object of cooling, disconnect above-mentioned heating unit, and make the electric current of the above-mentioned handled object of cooling flow through above-mentioned thermoelectric conversion element.
The invention provides a kind of computer program, control when using annealing device that handled object is implemented the heat treatment of regulation, above-mentioned annealing device is implemented the heat treatment of regulation to handled object, possesses: container handling that can exhaust; Be arranged in the above-mentioned container handling, be used for the mounting table of the above-mentioned handled object of side mounting in the above; The downside heating unit that above-mentioned handled object is heated is set below above-mentioned mounting table or above-mentioned mounting table; The light transmission window at the top of the above-mentioned container handling of bubble-tight covering; In above-mentioned container handling, import the gas introduction unit of necessary gas; With, be arranged on the top of above-mentioned light transmission window, by the light transmission window, penetrate the light of heating usefulness to above-mentioned handled object, and contain the heating unit that optical semiconductor penetrates a plurality of heated light sources formations of element respectively, aforementioned calculation machine program is controlled, make: when the above-mentioned handled object of heating, connect above-mentioned downside heater block above-mentioned handled object is preheated set point of temperature, after this, connect above-mentioned heater block and make above-mentioned handled object be warmed up to the predetermined process temperature.
The invention provides a kind of storage medium that stores computer program, this computer program is controlled when using the annealing device heat treatment that enforcement is stipulated to handled object, this annealing device is implemented the heat treatment of regulation to handled object, possesses: container handling that can exhaust; Be arranged in the above-mentioned container handling, be used for the mounting table of the above-mentioned handled object of side mounting in the above; The a plurality of thermoelectric conversion elements that are provided with on above-mentioned mounting table top; The light transmission window at the top of the above-mentioned container handling of bubble-tight covering; In above-mentioned container handling, import the gas introduction unit of necessary gas; With the top that is arranged on above-mentioned light transmission window, penetrate heating by the light transmission window to above-mentioned handled object and use up, and by containing the heating unit that a plurality of heated light sources that optical semiconductor penetrates element constitute respectively, described computer program is controlled, make: when the above-mentioned handled object of heating, connect above-mentioned heating unit, and make the electric current that above-mentioned handled object is heated flow through above-mentioned thermoelectric conversion element, when the above-mentioned handled object of cooling, disconnect above-mentioned heating unit, and make the electric current that above-mentioned handled object is cooled off flow through above-mentioned thermoelectric conversion element.
The invention provides a kind of storage medium that stores computer program, this computer program is controlled when using the annealing device heat treatment that enforcement is stipulated to handled object, above-mentioned annealing device is implemented the heat treatment of regulation to handled object, and this annealing device possesses: container handling that can exhaust; Be arranged in the above-mentioned container handling, be used for the mounting table of the above-mentioned handled object of side mounting in the above; The downside heating unit that above-mentioned handled object is heated is set below above-mentioned mounting table or above-mentioned mounting table; The light transmission window at the top of the above-mentioned container handling of bubble-tight covering; In above-mentioned container handling, import the gas introduction unit of necessary gas; With, be arranged on the top of above-mentioned light transmission window, by the light transmission window, penetrate the light of heating usefulness to above-mentioned handled object, and contain the heating unit that optical semiconductor penetrates a plurality of heated light sources formations of element respectively, aforementioned calculation machine program is controlled, make: when the above-mentioned handled object of heating, connect above-mentioned downside heater block above-mentioned handled object is preheated set point of temperature, after this, connect above-mentioned heater block and make above-mentioned handled object be warmed up to the predetermined process temperature.
According to annealing device of the present invention and storage medium, can bring into play excellent action effect as follows.
A plurality of thermoelectric conversion elements are set on mounting table, optical semiconductor is set above it penetrates element, when the heating handled object, in thermoelectric conversion element, flow through towards the electric current of the heating direction of handled object, and connect optical semiconductor and penetrate element, the light that penetrates heating usefulness from this element heats handled object, when cooling, in thermoelectric conversion element, flow through towards the electric current of the cooling direction of handled object, and disconnect optical semiconductor ejaculation element.Therefore, compare with the lamp heating, efficiency of heating surface height, and can heat up more at high speed and lower the temperature.
According to the present invention,,, therefore, can improve the uniformity of temperature in the face so can make the Illumination Distribution homogenizing on handled object surface because set reverberation from each first reflector in the mode that converges towards the zones of different of handled object respectively.
And, according to the present invention, because set the mensuration wavelength band territory of radiation thermometer in the mode different,, correctly carry out temperature measuring by radiation thermometer so can eliminate stray light to radiation thermometer with the light wavelength band territory of penetrating element from optical semiconductor.
Description of drawings
Fig. 1 is the sectional structure chart of an example of first embodiment of expression annealing device of the present invention.
Fig. 2 is the plane graph of the ordered state of expression thermoelectric conversion element.
To be expression penetrate the figure of the light path that heating that element penetrates uses up from the optical semiconductor of heated light sources to Fig. 3.
Fig. 4 is that expression is equipped with the amplification profile that optical semiconductor penetrates the element mounting bar of element.
Fig. 5 is the amplification stereogram of the fore-end of expression element mounting bar.
Fig. 6 is the sectional structure chart of an example of second embodiment of expression annealing device of the present invention.
Fig. 7 is the plane graph that element that optical semiconductor that the expression mounting blocks changes into the defined amount of a plurality of modules penetrates element is provided with the ordered state of substrate.
Fig. 8 is the amplification profile that the expression element is provided with the ordered state of substrate.
Fig. 9 is the amplification view that 1 element of expression is provided with substrate.
Figure 10 is the summary section of an example of 1 led chip of expression.
Figure 11 is the sectional structure chart of an example of the 3rd embodiment of expression annealing device of the present invention.
Embodiment
State an embodiment of annealing device of the present invention and storage medium below with reference to the accompanying drawings in detail.
Fig. 1 is the sectional structure chart of first embodiment of expression annealing device of the present invention, Fig. 2 is the plane graph of the ordered state of expression thermoelectric conversion element, to be expression penetrate the figure of the light path that heating that element penetrates uses up from the optical semiconductor of heated light sources to Fig. 3, Fig. 4 is that expression is equipped with the amplification profile that optical semiconductor penetrates the element mounting bar of element, and Fig. 5 is the amplification stereogram of the fore-end of expression element mounting bar.
As shown in Figure 1, theannealing device 2 of this first embodiment for example has by what aluminium constituted and is configured as cylinder-shaped container handling 4.This container handling 4 is set at for example can takes in the such size of 300mm wafer.The top of this container handling 4 is by opening, is provided withlight transmission window 8 with respect to the optical transparency of heating usefulness described later airtightly acrossseal members 6 such as O rings on this peristome.As the material of thislight transmission window 8, for example can use quartz etc.
In addition, the sidewall of this container handling 4 is provided withopening 7, and is provided with at thisopening 7 and takes out of thegate valve 10 that opens and closes when moving into semiconductor wafer W.And, being provided withgas nozzle 12 at other sidewall of container handling 4, the gas with necessity during as processing imports gas inside importing unit.And, being formed withexhaust outlet 14 at the periphery of container handling 4 bottoms, the gas extraction system that is provided with not shown vacuum pump is connected with thisexhaust outlet 14, for example can carry out vacuum exhaust to the atmosphere in the container handling 4.The atmospheric pressure degree will be maintained according to situation about handling in the container handling 4.The bottom of this container handling 4 has big opening, and the thick mounting table 18 that will be also used as the bottom acrossseal members 16 such as O rings is fixed on this opening airtightly.
This mounting table 18 for example is made of the thickmounting table body 20 of aluminum, the thindiscoideus mounting plate 24 that is arranged on a plurality ofthermoelectric conversion elements 22 on mountingtable body 20 tops and is arranged on thesethermoelectric conversion element 22 upper face sides.Direct mounting has the semiconductor wafer W as handled object on this mounting plate 24.Specifically, as above-mentionedthermoelectric conversion element 22, for example can use Peltier's element.This Peltier's element is by electrode different types of conductor and semiconductor to be connected in series, and flows through electric current, producing heat between contact and absorb hot element except Joule heat, for example by withstand the Bi that uses in the temperature below 200 ℃2Te3Formation such as (bismuth tellurium) element, PbTe (plumbous tellurium) element that can use at higher temperature, SiGe (SiGe) element.Thermoelectric conversion element 22 is electrically connected with thermoelectric conversionelement control part 26 through lead 28.The sense of current and the size of thermoelectric conversion element supplied with in 26 controls of thermoelectric conversion element control part when carrying out the heat treatment of above-mentioned wafer W.
Fig. 2 represents an example of the arrangement of thethermoelectric conversion element 22 that is made of Peltier's element.In Fig. 2, represented at diameter to be the wafer W of 300mm, 60thermoelectric conversion elements 22 are paved with almost very close to each otherly the example on roughly whole of rear side of above-mentioned mounting plate 24.When makingthermoelectric conversion element 22 closely during the contact configuration like this, heated chip W and mountingplate 24 equably.The shape ofthermoelectric conversion element 22 is not limited to quadrangle, also can be circle and hexagon.Here so-called thermoelectric conversion is meant that thermal power transfer is an electric energy, and perhaps electric energy is converted to heat energy.
In the inside of above-mentionedmounting table body 20, on roughly whole of its in-plane, be formed with thermal medium stream 30.This thermalmedium stream 30 is arranged on the bottom of above-mentionedthermoelectric conversion element 22, when making the wafer W cooling by the supply system cryogen (water) as thermal medium, below above-mentionedthermoelectric conversion element 22, capture warm the cooling.In addition, when wafer W is heated up,, below above-mentionedthermoelectric conversion element 22, capture cold energy and it is heated by supplying with warm medium as required.And thermalmedium stream 30 is connected with themedium circulation device 32 that transmits thermal medium with thermalmedium discharge pipe 36 through thermal medium ingress pipe 34.Thus,medium circulation device 32 is to heatmedium flow road 30 circulation supply thermal mediums.
In addition, as the material that is arranged on the mountingplate 24 on the above-mentionedthermoelectric conversion element 22, use the SiO of the easiest absorption described later from the light of heatedlight sources 522Making such as material, AIN material, SiC material are when heatedlight sources 52 main ejaculations are ultraviolet, with making such as the ultraviolet Ge material of main absorption easily, Si material, metal materials.Be provided with the not shown elevating mechanism that wafer W is carried out lifting in mounting table 18, this elevating mechanism is by connecting mountingtable body 20 and mountingplate 24, constituting from the supporting pin of many free liftings of lower support wafer W and the drive unit etc. that makes these supporting pins carry out lifting.
In addition, in mountingtable body 20, be formed on above-below direction and connect its through hole 37, wherein be provided with radiation thermometer 38.Specifically, in above-mentioned through hole 37, insert with airtight conditions and to be connected with theoptical fiber 40 that extends to below the above-mentioned mountingplate 24, can guide radiant light from mounting plate 24.Andradiation thermometer body 42 is connected with the end of thisoptical fiber 40, can measure the temperature of mountingplate 24, i.e. chip temperature with the light in mensuration wavelength band territory of regulation.Here as described later, set the mensuration wavelength band territory ofradiation thermometer 38 in the mode different with the light wavelength band territory of penetrating element from optical semiconductor.
And, above thelight transmission window 8 of container handling 4, be provided with through theheating unit 46 oflight transmission window 8 to the light of above-mentioned wafer W irradiation heating usefulness.Specifically, thisheating unit 46 has the dome-typeelement installation shell 48 that is configured as that is provided with covering above-mentionedlight transmission window 8 tops.This dome-type element is installed withshell 48, and for example the good material of heat conductivity by aluminium and copper etc. forms, whole be configured as for example hemispherical.Between this element is installed with the part of the upper end of the part of the bottom ofshell 48 and container handling 4,, can launch saidelements usefulness shell 48 is installed with not shown hinge joint.
This element is installed the reflecting surface that forms the high radiant rate of for example implementing gold-plated grade with the inner peripheral surface ofshell 48, works as second reflector 50.And the inner peripheral surface side of installing withshell 48 at this element is equipped with a plurality of heatedlight sources 52, penetrates the light (light) of heating usefulness thus.This heatedlight sources 52 distributed more equably to be arranged on dome-type element and to install in the roughly Zone Full with the inner peripheral surface ofshell 48, and for example integral body is provided with about 100 here.And, corresponding with each heatedlight sources 52 as shown in Figure 3, be respectively arranged with to be configured as and cave in into curved first reflector 54.The inner peripheral surface of thisfirst reflector 54 also forms the reflecting surface of the high reflectance of for example implementing gold-plated grade.The opening surface of thisfirst reflector 54 is configured as circle.Here by as mentioned above, element is installed had dome-type curve form, compare, a plurality of above-mentioned heatedlight sources 52 can be installed, therefore can use and drop into a large amount of electric power for heating with the situation of flat shape withshell 48.
And as shown in Figure 4 and Figure 5, above-mentioned each heatedlight sources 52 penetrateselements 58 by small bar-shapedelement mounting bar 56 with a plurality of optical semiconductors that are installed in its leading section and constitutes.By be arranged on thesplicing ear 60 that said elements installs with the central portion offirst reflector 54 ofshell 48 and be connected the base portion that thiselement mounting bar 56 is installed, support and fix thiselement mounting bar 56, and the electric power of necessity is supplied with above-mentioned optical semiconductor penetrate element 58.In addition, above-mentionedsplicing ear 60 is connected with power-supply system through not shown distribution.Mostelement mounting bar 56 is along vertical direction or the direction setting approximate with vertical direction.
And saidelements mounting bar 56 is made of for example heat pipe that forms hollow form, also as shown in Figure 4, is pasted with electrode cores (wick) 62 within it on the face, and is provided with working fluid in inside with sealing state.Thiselement mounting bar 56 for example is made of the heat conductivity good metal material of aluminium or copper one class.Thiselement mounting bar 56 is a polygonal, for example in situation shown in Figure 5, be configured as octangle, above-mentioned optical semiconductor is penetratedelement 58 install concentratedly, can regard the such size of point-source of light as all having in the side of the front end face and the leading section of this element mounting bar.Here, above-mentioned optical semiconductor penetrateselement 58 and is made of 0.3～1mm square LED element or semiconductor Laser device, has developed the element that per 1 element can both obtain high output in present technology.For example, if with the LED element as an example, developed the element that per 1 element can both obtain the height output of about 30W, and for example fruit has been developed every 1cm with semiconductor Laser device as an example2Element can access the element of the height output about about 2.5kW.
Thereby, when supposition is installed 30 above-mentioned optical semiconductors and is penetratedelement 58 on 1element mounting bar 56, under the situation of LED element, from 1 heatedlight sources 52 can access " 30W * 30 "=900W (watt) height output.And, when supposition heatedlight sources 52 whole quantity are 100, all be output as 100 * 900W=90kW.And, also be provided with the not shown distribution that is electrically connected above-mentionedsplicing ear 60 and each opticalsemiconductor ejaculation element 58 on one'sbody 56 of said elements mounting bars.
Here, the entire length of saidelements mounting bar 56 is about about 20～50mm, in addition, penetrateselement 58 as optical semiconductor, and the square LED element of 0.3～1mm for example is installed, and octangle length L 1 on one side is about about 1mm, reaches very miniaturization.
Here, the wavelength as penetrate the light (hot line) of element 58 ejaculations from above-mentioned optical semiconductor is preferably the following zone of 1.7 μ m, the infrared ray about for example about 1 μ m.With the wavelength that penetrates is that the reason that optical semiconductor below the 1.17 μ m penetrates element 58 is: be under the situation of silicon substrate when wafer W, and absorptivity and the wavelength of hot line and the temperature correlation of wafer itself to hot line of silicon substrate.That is, the hot line of wavelength up to about about 1.17 μ m, irrelevant with the temperature of silicon substrate, though express about high-absorbility of about 0.5～0.7, but when wavelength ratio 1.17 μ m were big, the temperature correlation coefficient of absorptivity and silicon substrate was big, and absorptivity also reduced (transmitance increase) when temperature reduced.For example when silicon substrate changes in 270～600 ℃ scope, in 0.1～0.7 scope, change with its respective absorption rate.Thereby, heat up at a high speed in order to make the wafer W that constitutes by silicon substrate, preferably use the optical semiconductor of the following hot line of emission wavelength 1.17 μ m to penetrate element 58.In addition, so-called hot line uses with the broad concept that comprises the light from above-mentioned ultraviolet light to Infrared as mentioned above.
In this case, in order not cause the stray light of evaluated error, set the mensuration wavelength band territory of above-mentionedradiation thermometer 38 in the mode different with the optical wavelength of above-mentioned opticalsemiconductor ejaculation element 58, for example set than the big wavelength of 1.17 μ m, the wavelength about for example about 3 μ m is for measuring the wavelength band territory.
Here, as shown in Figure 3, when the curve form of supposing above-mentioned first reflector 54 is the ellipse of revolution face with 2 focus f1, f2, when the optical semiconductor that will regard the heated light sources 52 of point-source of light as penetrated 58 groups of elements and is set at focus f1, the reverberation 62A that is reflected at first reflector 54 from the light of heated light sources 52 emissions converged at the second focus f2.But, because in fact be not point-source of light completely, thus even if penetrate reverberation 62A by 54 reflections of first reflector from heated light sources 52, its part also spread do not converge in the second focus f2 go up and be radiated at it around.And, from heated light sources 52 penetrate but a part of direct irradiation that is not mapped to the direct light 62B on first reflector 54 on the surface of wafer W, another part is mapped on second reflector 50 and after being reflected, is radiated on the surface of wafer W.In the light of irradiate wafer W, even if the amount maximum that is absorbed by wafer W also is about 70%, remaining part reflection or transmission.Wherein Fan She light is radiated on the wafer W once more by reflecting on second reflector 50.And in direct light, be radiated at the side of mounting table 18 and container handling 4 or the light on the bottom surface becomes loss.The amount of the light of this loss can be by changing first reflector 54 size, inclination, opening diameter etc. reduce as far as possible.
The quantity of heatedlight sources 52 is by the design objective of the programming rate of the irradiated area S1 of the wafer W of the size of wafer W, each heated light sources, wafer W, the power of whole heatedlight sources 52, the decisions such as diameter ofsecond reflector 50.
Here, the mode that converges with each zones of different in the surface of wafer W is set the zone by the irradiated area S1 of each heatedlight sources 52 irradiations, sets this zone in the mode of Zone Full that can cover wafers W surface.
And, get back to Fig. 1, the element that is provided with above-mentioned heatedlight sources 52 is installed theelement cooling unit 66 that is provided with the base portion side that is used to cool off saidelements mounting bar 56 with shell 48.Specifically, thiselement cooling unit 66 has with therefrigerant passage 68 that forms by near the mode the base portion of saidelements mounting bar 56, from for example cooling water ofrefrigerant inlet 68A importing as coolant, discharges from refrigerant outlet 68B.In addition, also can the air cooling said elements be installed by the inner space of using shell 48.And for example 70 pairs of these thewhole annealing devices 2 of control unit that are made of microcomputer etc. are controlled.Thiscontrol unit 70 has forexample storage medium 72 of formation such as floppy disk or flash memory, is used to store the computer program of the whole action of this device of control.
Below, the heat treatment action of carrying out at the 2 pairs of wafer W of annealing device that constitute as mentioned above describes.As mentioned above, below the action of explanation is carried out according to program stored in the above-mentioned storage medium 72.At this, the situation of carrying out annealing in process with the wafer W that the surface is injected with impurity is that example describes.
At first, open thegate valve 10 on the sidewall that is arranged on container handling 4, move in theprocessing container 4, it is positioned on the mountingplate 24 of mounting table 18 by the wafer W that opening 7 will be handled.After this, closinggate valve 10, closed processes container 4.Then, utilize exhaust unit to carrying out vacuum exhaust in the container handling 4, be replaced as the processing gas of supplying with from the gas supply source, for example argon gas and nitrogen maintain predetermined process pressure (for example 100～10000Pa).
Then, makethermoelectric conversion element 22 energisings that constitute by Peltier's element, wafer W is preheated.Pre-heating temperature is about 500～600 ℃.At this pre-heating temperature, the impurity that is injected into wafer W can not spread.
Detect the temperature of wafer W withradiation thermometer 38, when thisradiation thermometer 38 detects the pre-heating temperature that reaches regulation, connect whole heatedlight sources 52 ofheating unit 46, penetrateelement 58 emission light from each optical semiconductor, with the surface of this hot line irradiate wafer W, make its instantaneous predetermined process temperature (for example 1000 ℃) that is warmed up to.At this moment, the electric power of supplythermoelectric conversion element 22 for example heats up for total power promptly makes wafer W.And, keep official hour by making this condition of high temperature, carry out annealing in process.Like this, wafer W is heated, for example programming rate is brought up to about 100～300 ℃/sec, can realize heating up at a high speed by upper and lower surface.
Particularly, because dispose a plurality of heatedlight sources 52 by gathering a plurality of opticalsemiconductor ejaculation elements 58 that can highly export and carrying out point-source of lightization, use up (hot line) from the heating of the high output of each heatedlight sources 52 irradiation, so the illumination of the hot line on the wafer face can be brought up to very highly, can heat up rapidly.And when wafer heated up, above-mentionedthermoelectric conversion element 22 worked as the downside heating unit.
When carrying out annealing in process, because produce cold energy in the inside of thethermoelectric conversion element 22 that constitutes by Peltier's element side, so in order to get rid of this cold energy, in being arranged at the thermalmedium stream 30 of mountingtable body 20, flow through heat medium,thermoelectric conversion element 22 is worked expeditiously.
In addition, it is good that the optical semiconductor ofheating unit 46 penetrateselement 58 luminous efficiencies, but be difficult to avoid itself generation heating to a certain degree.; because theelement mounting bar 56 that this optical semiconductor penetrateselement 58 is installed to be made of heat pipe; so will penetrate the other end that the heat that takes place in theelement 58 is sent toelement mounting bar 56 at above-mentioned optical semiconductor; this heat is sent to the element that is made of aluminium etc. installs withshell 48 sides; further; in being arranged at therefrigerant passage 68 of element installation, flow through cooling water, hot type is gone out with theelement cooling unit 66 of shell 48.Therefore, optical semiconductor be can cool off expeditiously andelement 58 andelement mounting bar 56 penetrated.
In addition, because the majority in theelement mounting bar 56 that constitutes by heat pipe, along vertical direction or the direction setting approximate, so the heat pipe that carries out work by gravity is worked expeditiously with vertical direction, thus, can improve the cooling effectiveness that optical semiconductor penetrateselement 58.
In addition, because byfirst reflector 54 andsecond reflector 50, can high efficiency and will penetrate rayed thatelement 58 penetrates to wafer face from the high optical semiconductor of luminous efficiency equably, thus the efficiency of heating surface can be improved, and can improve the inner evenness of chip temperature.
Thus, if only in the short time of regulation, carry out annealing in process, then, as far as possible promptly cool off wafer W in order to prevent the impurity excess diffusion in the wafer W.That is, in this case, lower the temperature at a high speed in order to make chip temperature, by make electric current along and when heating rightabout flow through thethermoelectric conversion element 22 that constitutes by Peltier's element, make above it and cool off.Therefore, carry out hurried cooling by 24 pairs of wafer W of cooling mounting plate.At this moment because take place warm, makethermoelectric conversion element 22 below be heated, so for its cooling, opposite when heating with wafer, in thermalmedium stream 30, flow through coolant.Thus, can makethermoelectric conversion element 22 efficient actions.
And with the above-mentioned work while, disconnection is arranged on element each heated light sources 52 of using the heating unit 46 on the shell 48 is installed, and blocks the electric power of supplying with it.And meanwhile, by making cold-producing medium, for example cooling water continues to flow through the refrigerant passage 68 of element cooling unit 66, and the element mounting bar 56 and the optical semiconductor that continue each heated light sources 52 of cooling penetrate element 58.In this case, when with under the situation of heating tube as the wafer heating source because heating tube itself has big thermal capacity, even and if lamp extinguished heating tube itself and also be in the condition of high temperature, so the radiant heat that itself is sent by this heating tube continues heated chip.Therefore, even if use cooling unit, cooling rate also can produce boundary, is difficult to obtain bigger cooling rate.But, as device of the present invention, because the optical semiconductor that uses considerably less LED element of the caloric value of element own or semiconductor Laser device to constitute penetrates element 58, and use 66 pairs of these elements 58 of element cooling unit and element mounting bar 56 to cool off, so caloric value that can not suppression element itself, and can be with its rapid cooling.Therefore can reduce the radiant heat of emitting significantly, the result can promote the cooling rate of wafer W significantly, can realize cooling at a high speed.
At this moment, illustrating when heating as wafer, because use heat pipe aselement mounting bar 56, and be provided with a plurality ofelement mounting bars 56 in vertical direction or approximate vertical direction, make the heat pipe effective action, therefore can be more effective and high efficiencyly optical semiconductor is penetratedelement 58 cool off.As a result, can carry out the high speed cooling with bigger cooling rate.According to device of the present invention, can wafer be cooled off with for example cooling of the high speed about 100～300 ℃/sec.In addition, optical semiconductor penetrateselement 58 and compares with heating lamp, can life-saving.
In addition, in the above-described embodiments, the curve form offirst reflector 54 that will be provided with each heatedlight sources 52 makes to become the ellipse of revolution face, but is not limited to this, also can be set at the curved surface approximate, for example the paraboloid of revolution (parabolic shape) or hemisphere face etc. with the ellipse of revolution face.
In addition, each heatedlight sources 52 that is provided with on theshell 48 is installed, also can be divided into a plurality of zones of concentric circles, control each regional supply capability at element.
In addition, be not limited to nozzle, for example also can use with respect to heating light material transparent, for example nozzle structure of quartzy system asgas introduction unit 12.
Further, in the above-described embodiments, the element installation is illustrated as an example with the situation that shell 48 is configured as hemispheric curve form (dome-shaped), but be not limited to this, also can be shaped as ellipse of revolution shape or the curve form close, further with the ellipse of revolution shape, if the installation number of heatedlight sources 52 is few, also can be shaped as flat shape, no matter in which kind of situation, all relevant and design with the power output of each heatedlight sources 52 and the heating-up temperature of wafer W etc.
＜the second embodiment 〉
The following describes second embodiment of annealing device of the present invention.
Among first embodiment in front, element installed to be configured as hemispheric dome-type situation roughly withshell 48 be illustrated as an example, in a second embodiment, describe at the object lesson of element being installed when being configured as the general planar shape withshell 48.
Fig. 6 is the sectional structure chart of an example of second embodiment of this annealing device of the present invention of expression, Fig. 7 is the plane graph that element that optical semiconductor that the expression mounting blocks turns to the defined amount of a plurality of modules penetrates element is provided with the ordered state of substrate, Fig. 8 is the amplification profile that the expression element is provided with the ordered state of substrate, Fig. 9 is the amplification view that 1 element of expression is provided with substrate, and Figure 10 is the summary section of an example of 1 led chip of expression.In addition, with Fig. 1 to the identical structure division of structure division shown in Fig. 5, additional identical label also omits explanation to them.
As shown in Figure 6, in theannealing device 80 of this second embodiment, as mentioned above, it is not dome-shaped that the element ofheating unit 46 oflight transmission window 8 tops that covering is arranged on the top of container handling 4 is installed withshell 82, and being configured as substantially planar, the peripheral part that forms it is the crooked rectangular shape of downward direction a little.The element of this shape is installed withshell 82 can pass through heat in metal cutting conductibility good metal material, for example aluminium and forming.Install with in theshell 82 at this element, formrefrigerant passage 68, composedcomponent cooling unit 66 at whole.
In addition, element is installed the medial surface withshell 82, promptly among the figure below, form smooth element installedsurface 84 in the mode relative with above-mentioned mounting table 18.Setting the distance H 1 between this element installedsurface 84 and the above-mentionedlight transmission window 8 very little, for example is about 10～20mm, can improve the efficiency of heating surface.And, on this element installedsurface 84, in that roughly being set on whole, a plurality of optical semiconductors penetrate elements 58.Each optical semiconductor penetrateselement 58 and constitutes heatedlight sources 52.
Specifically, the above-mentioned a plurality of optical semiconductors ejaculationelements 58 to every defined amount carry out blocking.That is, herein, with respect to a module, have alittle element substrate 86 is set, as shown in Figure 7 and Figure 8, this element is provided withsubstrate 86 planar configuration roughly very close to each other on above-mentioned smooth element installedsurface 84 and be mounted.The zone that this element is provided withsubstrate 86 is set, bigger than the projected area of the wafer W on the mounting table 18.
And, as shown in Figure 9, at each element the above-mentioned optical semiconductor that defined amount is installed on thesubstrate 86 is set and penetrateselement 58, therefore, the zone that is provided with opticalsemiconductor ejaculation element 58 is bigger than the projected area of the wafer W on the mounting table 18.Said elements is provided withsubstrate 86 by heat conductivity good metal material, and for example aluminium forms, and itsperipheral part 86A downward direction increases a little and makes and all become roughly section recess shape.In illustrated embodiment, this element is provided withsubstrate 86 and is configured as square shape, but is not limited to this shape.And, the spot-facing 88 that the position that forms decision on 4 angles of rear side (in the situation at Fig. 8 for upper face side) ofsubstrate 86 and become the non-through hole state is used is set at this element.
And, as mentioned above, being provided with at this element and leaving each minim gap on thesubstrate 86, in perfect order in length and breadth the arrangement is equipped with optical semiconductor and penetrates element 58.Herein, the length L 2 (please refer to Fig. 9) that 1 element is provided with 1 limit in length and breadth ofsubstrate 86 for example is respectively about 25mm, and its thickness is about 5mm, is respectively 30 in length and breadth, all is that 900 ground are provided with above-mentioned optical semiconductor and penetrate element 58.And, install with for example this module about 148 is set in theshell 82 at whole element, promptly element is provided with substrate 86.In addition, situation shown in Figure 7 has been simplified element and the quantity ofsubstrate 86 is set and is represented.In fact, optical semiconductor penetrateselement 58, and it is individual to be provided with 133200 (=900 * 148) in whole element is installed with shell 82.In addition, the number that is provided with that this optical semiconductor penetrateselement 58 is not limited to above-mentioned numerical value, depends on the design load of the programming rate of the output of 1 element and wafer W.
In this case, penetrateelement 58 as optical semiconductor, also can be with led chip and semiconductor laser chip being encapsulated the element that obtains by resin etc., but because can improve packing density, so also can use led chip, semiconductor LED chip or semiconductor laser chip.Promptly, such as everyone knows, generally, by each element is cut out monomer and each element in a plurality of elements that form on semiconductor wafer carry out chipization, lens are set with encapsulation such as resins thereon, form LED element and semiconductor Laser device, but also can use here with led chip before the encapsulation such as resin and semiconductor laser chip.
And, penetrateelement 58 as above-mentioned optical semiconductor here, use the preceding small ledchip 58A of encapsulationization.Light quantity is many in this ledchip 58A, so can use the ledchip 58A that can carry out so-called luminous surface-emitting type.The ledchip 58A of this surface-emitting type for example has the square size of 0.3～1mm, can be provided with on thesubstrate 86 at said elements with high-density installation.As shown in figure 10,, formnitride semiconductor layer 94 thereon, for example furtherform mesh electrode 96 in its surface and constitute this ledchip 58A by for example on concavo-convex sapphire substrate 90, forming light-emittingzone 92.
As shown in Figure 9, in order to reduce power-supply device as much as possible, make bydistribution 100 to be installed in 1 element and for example each optical semiconductor of 900 on thesubstrate 86 is set penetrateselement 58 electricity and be connected in series.And, at this element the periphery ofsubstrate 86 is set, be provided with theelectrode 102A, the 102B that are connected with external electric.
This element is provided with theinner face 86B (in Fig. 8 for below) ofsubstrate 86 and element installed surface 84 (with reference to Fig. 6) that element is installed withshell 82 is processed into minute surface, the formation reflecting surface constitutes reflector respectively.Therefore, the heat efficiency in the time of can improving the wafer heating.
As shown in Figure 7, the element that forms like this is provided withsubstrate 86, promptly optical semiconductor penetrateselement 58, is divided into a plurality of zones, can control independently each zone.Under situation shown in Figure 7, be divided into the regional 104A of central portion and be configured in whole like this 5 zones of 4 regional 104B～104E of its periphery equably.And, in Fig. 7, roughly represented the dividing region line.
In addition, theannealing device 80 of second embodiment that constitutes as mentioned above also similarly carries out work with first embodiment that illustrates previously basically.
Particularly under the situation of this second embodiment, not dome-shaped because element is installed withshell 82, and be configured as tabular,, can improve the efficiency of heating surface thus so the gap of each opticalsemiconductor ejaculation element 58 and wafer W is littler than the situation of first embodiment.
In addition, penetrateelement 58 as being installed in the optical semiconductor that each element is provided with on thesubstrate 86, for example, can this ledchip 58A be installed high packing density ground, can further improve programming rate thus by using the ledchip 58A that cuts out the shaped like chips of the sort of state from semiconductor wafer.
In addition, because constitute the element of direct installation opticalsemiconductor ejaculation element 58 respectively with heat conductivity goodmetal material substrate 86 andelement installation shell 82 are set, so, can be expelled to outside the system penetrating the heat that takes place in theelement 58 expeditiously at above-mentioned optical semiconductor by in being arranged on therefrigerant passage 68 of element installation, flowing through cooling water etc. with theelement cooling unit 66 in the shell 82.Therefore, can cool off above-mentioned optical semiconductor expeditiously and penetrateelement 58, element andsubstrate 86 and element are set install withshell 82 etc., thereby, can make the cooling rate of wafer W bigger.
In addition, when opticalsemiconductor ejaculation element 58 is installed, be arranged on 1 block element and be provided with and carry out modularization on thesubstrate 86 because the optical semiconductor of every group of defined amount is penetratedelement 58, this element is provided withsubstrate 86 is installed in element and installs, so installation exercise is simplified with on theshell 82.
In addition, because penetrateelement 58 with each optical semiconductor of wafer face assortment abreast, thus not only can realize inner evenness wafer W is heated, and optical design and thermal design are oversimplified.
Further, because element is installed withshell 82 planarizations, so also can make the miniaturization of device own.
＜the three embodiment 〉
The following describes the 3rd embodiment of annealing device of the present invention.
Among first and second embodiment formerly, the situation that will be arranged on mounting table 16 sides by thethermoelectric conversion element 22 that Peltier's element constitutes is illustrated as an example, but is not limited to this, also can use the common mounting table of using at present.
Figure 11 is the sectional structure chart of an example of the 3rd embodiment of this annealing device of the present invention of expression.
Here, will the situation thatheating unit 46 withshell 82 is arranged on the top side of container handling be installed with the flat element of second embodiment shown in Figure 6 describes as an example.And, to the identical structure division of structure division shown in Figure 10, adding identical label with Fig. 1, and omitting explanation them.
As shown in figure 11, in theannealing device 110 of the 3rd embodiment, as mentioned above, mounting table 18 for example is provided with resistance heater 114 and replaces originalthermoelectric conversion element 22 as downside heating unit 112.And, by the work ofheater control part 116 these resistance heaters 114 of control.
The work of this resistance heater 114, the situation with previous first and second embodiment when wafer heats up is identical.At first, make resistance heater 114 energisings, after wafer W is heated to pre-heating temperature (for example 500～600 ℃), connect whole heatedlight sources 52 ofheating unit 46, penetrateelement 58 emission light from each optical semiconductor, from upper and lower surface wafer W is heated, can make its instantaneous predetermined process temperature (for example 1000 ℃) that is warmed up to.Under the situation with previousthermoelectric conversion element 22 when wafer W is lowered the temperature, by electric current opposite direction to intensification the time is flowed, can force cooling to wafer, but here because only stop energising with resistance heater 114, so compare with the first and second previous embodiment, the cooling rate of wafer has a little reduction.And, when wafer is lowered the temperature, make coolant flow to thermalmedium stream 30, cooling mounting table 18 itself also promotes that the cooling of wafer W is natural.
In addition, use resistance heater 114 asdownside heating unit 112 here, but be not limited to this, for example also can use heating lamp, it is lamellar that mounting table 18 is configured as, from the hot line of below irradiation heating lamp.
In addition, in above-mentioned second embodiment, to be illustrated as an example as the situation that optical semiconductor penetrateselement 58 from scutellate ledchip 58A or the semiconductor laser chip that wafer cuts out, even if but in first embodiment, the also element that not only can obtain with packaged chips such as resins, also can be with these scutellate led chip or semiconductor laser chip, this is natural.
In addition, as heat treatment annealing in process is illustrated as an example herein, but is not limited thereto, also can apply the present invention to other heat treatment of oxide-diffused processing, film forming processing, modification processing, etch processes etc.
In addition, penetrateelement 58, can mix that also LED element and semiconductor Laser device being set as optical semiconductor.
Further, herein, as handled object is that example is illustrated with the semiconductor wafer, but be not limited to this, also can apply the present invention to glass substrate, LCD substrate, ceramic substrate etc., in this case, select to export the optical semiconductor ejaculation element of the highest wavelength of efficiency of light absorption accordingly with the kind of each substrate.
Claims (24)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2005273907 | 2005-09-21 | ||
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| JP5351479B2 (en)* | 2008-01-28 | 2013-11-27 | 東京エレクトロン株式会社 | Cooling structure of heating source |
| WO2012042664A1 (en)* | 2010-10-01 | 2012-04-05 | 東芝三菱電機産業システム株式会社 | Soaking apparatus |
| KR102033200B1 (en)* | 2012-05-30 | 2019-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for rapid thermal processing |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| JP2020009927A (en)* | 2018-07-09 | 2020-01-16 | フェニックス電機株式会社 | Heating led lamp and wafer heating unit provided with the same |
| JP7198434B2 (en)* | 2019-03-27 | 2023-01-04 | ウシオ電機株式会社 | Heat treatment method and light heating device |
| EP4216666A3 (en) | 2022-01-19 | 2023-08-23 | Phoenix Electric Co., Ltd. | Lamp for heating and heating apparatus including the same |
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| JP2002049326A (en)* | 2000-08-02 | 2002-02-15 | Fuji Photo Film Co Ltd | Plane light source and display element using the same |
| JP2003077852A (en)* | 2001-09-03 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus and method |
| JP2003077857A (en)* | 2001-09-03 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus and method |
| JP4497796B2 (en)* | 2002-07-01 | 2010-07-07 | 株式会社リコー | Surface emitting semiconductor laser, surface emitting semiconductor laser array, optical communication system, optical writing system, and optical pickup system |
| US6818864B2 (en)* | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
| JP4442171B2 (en)* | 2003-09-24 | 2010-03-31 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JP2005116631A (en)* | 2003-10-03 | 2005-04-28 | Sony Corp | Semiconductor laser array and its manufacturing method |
| JP2005207997A (en)* | 2004-01-26 | 2005-08-04 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
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