CN100536634C - Plasma processing device and method - Google Patents

Abstract

Translated fromChinese

本发明提供一种利用多根气体供给管件将处理气体供给到处理容器内的等离子体处理装置和等离子体处理方法。其中，微波等离子体处理装置(100)构成为具有多根气体导入管(30)、多根气体管(28)、和支撑这些气体管(28)的多个支撑体(27)。在多个支撑体(27)的内部设有连接于气体导入管(30)的第一路径或第二路径。氩气经由气体导入管(30)从第一路径供给，由微波进行等离子体化(P1)。硅烷气体和氢气经由气体导入管(30)、第二路径从多根气体管(28)供给，由使氩气等离子体化时被减弱的微波进行等离子体化(P2)。由如此产生的等离子体可以生成优质的无定形硅膜。

The present invention provides a plasma processing device and a plasma processing method for supplying processing gas into a processing container by using a plurality of gas supply pipes. Among them, the microwave plasma processing apparatus (100) is configured to have a plurality of gas introduction pipes (30), a plurality of gas pipes (28), and a plurality of supports (27) supporting the gas pipes (28). A first path or a second path connected to the gas introduction pipe (30) is provided inside the plurality of supports (27). Argon gas is supplied from the first path through the gas introduction tube (30), and is plasmaized by microwaves (P1). Silane gas and hydrogen gas are supplied from a plurality of gas tubes (28) via a gas introduction pipe (30) and a second path, and are plasma-formed by microwaves weakened when argon gas is plasma-formed (P2). A high-quality amorphous silicon film can be produced from the plasma thus generated.

Description

Plasma processing apparatus and method of plasma processing

Technical field

The present invention relates to a kind of gas feed unit that utilizes two systems will handle gas and supply to plasma processing apparatus and method of plasma processing in the container handling.

Background technology

Always, propose that the plasma processing apparatus (for example, with reference to patent documentation 1) of supplying with two kinds of gases of different nature from the gas supply mechanism (for example gas spray head) that is located at container handling two systems is up and down respectively arranged.

On the other hand, in recent years, in order to adapt to the large tracts of landization of substrate, the plasma processing apparatus that this substrate is carried out plasma treatment also maximizes.With this,, be necessary also to make the gas spray head to maximize for uniform plasma takes place in container handling.But, if use above-mentioned prior art, then because of the integrated formation of gas spray head, so if consider the rigidity of gas spray head, it is limitary that the gas spray head is maximized.

[patent documentation 1] Japanese patent laid-open 7-312348 communique

Summary of the invention

The present invention in view of the above problems, its purpose is to provide a kind of and utilizes many gas supply pipe spares will handle gas to supply to plasma processing apparatus and method of plasma processing in the container handling.

In order to solve above-mentioned problem, a viewpoint of the present invention provides a kind of plasma processing apparatus, makes the processing gaseous plasmaization that supplies in the container handling by microwave, and substrate is carried out plasma treatment, it is characterized in that having: import a plurality of gas introduction parts of handling gas; Many gas supply pipe spares; First handle gas and be released to the first gas feed unit in the above-mentioned container handling what import at least one gas introduction part; With utilize above-mentioned many gas supply pipe spares, second handle gas and be released to the second gas feed unit in the above-mentioned container handling what import at least one gas introduction part.

As previously mentioned, existing gas supply mechanism (for example, gas spray head) forms.In contrast, gas supply mechanism of the present invention is formed by a plurality of gas supply pipe spares.As a result, only depend on the radical that increases gas supply pipe spare, just can easily make gas spray head large tracts of landization.

In addition, according to the present invention, supply in the container handling respectively by the first gas feed unit and the second gas feed unit processing gas with two systems.Thus, in a processing procedure, can make two or more processing gaseous plasmaizations respectively.As a result, can moderately dissociate or ionization gas separately, can implement needed plasma treatment to substrate by the plasma that produces thus according to the character of handling gas.

In addition, as gas supply pipe spare because of the situation of the bump deterioration of the ion that produces in the processing procedure etc., when producing unfavorable condition on the gas supply pipe spare, only change produce unfavorable condition pipe fitting just can, it is all to there is no need to change the gas spray head.As a result, the maintenance management of plasma processing apparatus becomes easily, and can reduce plasma processing apparatus and safeguard required expense.

Here, above-mentioned many gas supply pipe spares can be arranged on and supply with above-mentioned first below of handling the supply port of gas.

Thus, first handles gas by plasmaization, and by this plasma, second handles gas by plasmaization.As a result, can not promote second to handle the disassociation of gas, substrate is implemented required plasma treatment.

In addition, though above-mentioned many gas supply pipe spares also can be formed by nonmetal, preferably form by dielectric.Particularly under the situation that gas supply pipe spare is formed by dielectric, when forming by metal as gas supply pipe spare, because sheath layer (sheath) is little to the influence on the surface of gas supply pipe spare, so the electromagnetic field of the near surface of gas supply pipe spare is not disturbed, the distribution that non-warping plasma generates.Therefore, can generate more uniform plasma.In addition, if use these, then can eliminate the problem that is produced when gas supply pipe spare is formed by metal, i.e. gas supply pipe spare thermal deformation is (for example, gas supply pipe spare is crooked because of the heat of plasma, fusing), or the problem that in plasma treatment, is corroded of gas supply pipe spare.

In addition, also can on above-mentioned many gas supply pipe spares, be respectively equipped with a plurality of pores, the above-mentioned second gas feed unit is released in the above-mentioned container handling above-mentioned second from a plurality of pores that are located at respectively on the above-mentioned many gas supply pipe spares with handling gas spray shape.

Utilize these, second handles gas can be released in the container handling from a plurality of pores that are located on the many gas supply pipe spares with spraying shapes.Thus, can handle gas with second is released in the container handling equably.As a result, can handle gas by second plasma takes place more equably.

Also have, it is position between dielectric and the mounting table that relative this dielectric is provided with that for example is arranged in the container handling that what is called is provided with assigned position in the container handling of many gas supply pipe spares, also can be and position that the dielectric of the position of the supply first processing gas leaves mutually.

In addition, above-mentioned plasma processing apparatus also has the supporter that supports above-mentioned many gas supply pipe spares.Utilize these,, can guarantee the rigidity that the gas spray head is all, and, can make gas spray head large tracts of landization by increasing the radical of gas supply pipe spare by many gas supply pipe spares of support body supports.

Specifically, existing spray head is all formed by dielectric, and spray head itself is set to be supported on the wall of container handling.But in the present invention, as mentioned above, spray head is formed by the many gas supply pipe spares that supporter supported.And this supporter also can be formed by metal.Thus, all compare, can dispel the heat expeditiously from the supporter of gas supply pipe spare to metal by the prior art that dielectric forms with spray head.As a result, can prevent that in plasma treatment gas supply pipe spare from becoming gas supply pipe spare that high temperature causes by breakage because of plasma heat etc.

In addition, above-mentioned supporter is to fix with respect to the telescopic mode of above-mentioned container handling.Thus, can make a plurality of gas supply pipe spares move to the position that needs in the container handling by the flexible of supporter.Thus, consider when first handles gas by plasma by the electromagnetic field that weakened or with by first collision of handling the plasma that gas takes place, second handles gas by the aspect of plasmaization, can make gas supply pipe spare move to the position that best plasma takes place based on the character of the various processing gases of supplying with according to processing procedure.As a result, can set the position of a plurality of gas supply pipe spares according to the degree that hope is low by electron temperature (Te) more equably, plasma that electron density (Ne) is high carries out dissociating gas.

In addition, a plurality of above-mentioned supporters and above-mentioned gas introduction part are set respectively,, can be provided with first path that is connected to above-mentioned a plurality of gas introduction parts or at least one of second path in the inside of above-mentioned a plurality of supporters.At this moment, the above-mentioned first gas feed unit can be supplied with above-mentioned first from above-mentioned first path and handle gas via at least one gas introduction part.In addition, the above-mentioned second gas feed unit can be supplied with above-mentioned second from above-mentioned many gas supply pipe spares and handle gas via at least one gas introduction part and above-mentioned second path.

Utilize these, first handles gas supplies with from first path, and second handles gas supplies with from many gas supply pipe spares via second path.Thus, second handles gas, via handling different path, path that gas passes through and supply to position separately in the container handling with first.In a processing procedure, can make the state that two or more processing gaseous plasmas changes into to be needed thus respectively.As a result, generate more equably from handling gas that electron temperature (Te) is low, the high plasma of electron density (Ne), can carry out plasma treatment to substrate accurately by this plasma.

As the kind of institute's gas supplied, for example, the first processing gas can be the gas of molecule binding energy greater than the second processing gas.If use these, can be when making first to handle gaseous plasma consumed energy, second handles gas undertaken plasmaization by the microwave that energy weakens a little.Thus, can from the molecule binding energy big, handle gas as first of inertia strong plasma take place, and can plasmaization to not too promote the molecule binding energy little, as the degree of the disassociation of the second processing gas of reactant gas.As a result, utilize high plasma of electron density (Ne) and the low plasma of electron temperature (Te) accurately substrate to be carried out plasma treatment more equably.

For example, handling gas first is the big argon gas of molecule binding energy (Ar), and the second processing gas is the little silane gas (SiH of molecule binding energy₄) or hydrogen (H₂) time, argon gas is dissociated or ionization fully by the microwave with strong energy.On the other hand, silane gas or hydrogen leave and are suitably dissociated or ionization by the microwave a little less than the electric field from the slot antenna that is made of dielectric.SiH for example₄SiH dissociates₃Base, but disassociation is less than SiH₂The degree of base.As a result, can be because of SiH₂Base makes the film deterioration, uses the plasma that is generated can generate the high amorphous silicon film of precision on substrate.

In addition, if with another kind of viewpoint of the present invention, a kind of method of plasma processing is provided, be used for making the processing gaseous plasmaization that supplies in the container handling by microwave, substrate is carried out plasma treatment, it is characterized in that, comprising:, handle gas from first path with first and supply to operation in the above-mentioned container handling via at least one the gas introduction part in a plurality of gas introduction parts that import gas; With via with supply with the above-mentioned first different gas introduction part and second path of gas introduction part of handling gas, handle gas from many gas supply pipe spares with second and supply to operation in the above-mentioned container handling.

Thus, first handles gas supplies in the container handling from first path, and second handles gas supplies with from a plurality of gas supply pipe spares via second path.Thus, can easily make gas spray head large tracts of landization by the radical that increases gas supply pipe spare.In addition, can supply with two or more processing gas respectively in a processing procedure, can generate plasma according to gas property separately, the result can be to the plasma treatment of substrate enforcement needs.

As described above, according to the present invention, can provide a kind of and utilize many gas supply pipe spares will handle gas to supply to plasma processing apparatus and method of plasma processing in the container handling.

Description of drawings

Fig. 1 is the sectional view of the plasma processing apparatus of expression an embodiment of the invention.

Fig. 2 is the figure that the air valve that looks up from the container handling bottom is described.

Fig. 3 is the sectional view of a part of the microwave plasma processing apparatus of presentation graphs 1.

Symbol description

10 container handlings

11 pedestals

20 lids

22a～22f waveguide pipe

23a～23f slot antenna

24a～24f dielectric

26a～26g beam

27 supporters

28 flues

29 microwave generators

30a～30g gas introduction tube

31a first stream

31b second stream

32 gas supply sources

32a4 argon gas feed source

32b4 silane gas supply source

32b8 hydrogen supply source

100 microwave plasma processing apparatus

Embodiment

With reference to the accompanying drawings preferred implementation of the present invention is elaborated.In addition, in this specification and accompanying drawing, just have the inscape that identical function constitutes in fact, give same numeral and omit repeat specification.

(formation of microwave plasma processing apparatus)

At first, to the microwave plasma processing apparatus of an embodiment of the invention, its formation is described with reference to Fig. 1.Fig. 1 is with being parallel to axial sectional view that cuts off microwaveplasma processing apparatus 100 of x direction of principal axis and z.Microwaveplasma processing apparatus 100 is examples of plasma processing apparatus.In the present embodiment, enumerating the example that generates amorphous silicon film (a-Si) by microwaveplasma processing apparatus 100 describes.

Microwaveplasma processing apparatus 100 has the framework that is made ofcontainer handling 10 and lid 20.Whatcontainer handling 10 had a upper opening has an end cube shaped, is grounded.Container handling 10 is formed by for example aluminium metals such as (Al).In the inside ofcontainer handling 10,, be provided with as themounting pedestal 11 of the mounting table of glass substrate W (hereinafter referred to as " substrate W ") for example at the substantialmiddle place.Pedestal 11 is formed by for example aluminium nitride.

In the inside ofpedestal 11, be provided withpower supply 11a and heater 11b.Onpower supply 11a, be connected with high frequencyelectric source 12b viaadaptation 12a (for example capacitor).In addition, onpower supply 11a, be connected with high-voltageDC power supply 13b viacoil 13a.Adaptation 12a, high frequencyelectric source 12b,coil 13a and high-voltageDC power supply 13b are located at the outside ofcontainer handling 10, and high frequencyelectric source 12b and high-voltageDC power supply 13b are grounded.

Power supply 11a is applied to the bias voltage of regulation by the High frequency power of being exported from high frequencyelectric source 12b the inside of container handling 10.In addition, the direct current Electrostatic Absorption substrate W ofpower supply 11a by being exported from high-voltageDC power supply 13b.

Onheater 11b, be connected with theAC power 14 of the outside that is located atcontainer handling 10, substrate W remained under the temperature of regulation by the alternating current of being exported fromAC power 14.

The bottom surface of container handling 10 is a tubular by opening, and near the periphery of opening, an end ofbellows 15 is towards the outside of container handling 10 and install.On the other end ofbellows 15, be fixed with lifter plate 16.So, the opening portion of container handling 10 bottom surfaces is bybellows 15 andlifter plate 16 sealings.

Pedestal 11 is supported on thecylindrical shell 17 that is fixed on thelifter plate 16, withlifter plate 16 andcylindrical shell 17 become one ground lifting.Thus,pedestal 11 is adjusted to the height according to processing procedure.

Aroundpedestal 11, be provided with and be used for the gas flow in the container handling is controlled to the cowlingpanel 18 of kilter.In addition, on the bottom surface ofcontainer handling 10, be provided with thegas outlet pipe 19 that is connected in not shown vacuum pump.The gas of vacuum pump by discharging in the container handling fromgas outlet pipe 19 will be vented to the vacuum degree that needs in the container handling.

Lid 20 is configured toseal container handling 10 above container handling 10.Lid 20 is same withcontainer handling 10, is formed by for example aluminium metals such as (Al).In addition,lid 20 is grounded equally with container handling 10.Onlid 20, be provided with and covermain body 21,waveguide pipe 22a～waveguide pipe 22f,slot antenna 23a～slot antenna 23f and dielectric 24a～dielectric 24f.

Container handling 10 andlid 20 by the circle of the O shape between the top peripheral part that is configured in the following peripheral part that coversmain body 21 and container handling 10 25, keep hermetic fixing, are formed with above-mentionedwaveguide pipe 22a～waveguide pipe 22f in the bottom of lidmain body 21.

Waveguide pipe 22a～waveguide pipe 22f is formed by the rectangular wave guide that is shaped as rectangle perpendicular to axial cross section, as shown in Figure 2, is connected onmicrowave generator 29a～microwave generator 29f.For example, at TE10 pattern (TE ripple: transverse electric wave (H mode); Magnetic field has the ripple of the direct of travel component of microwave) situation under, the wide tube wall of waveguide pipe 22 becomes the H face that is parallel to magnetic field, narrow tube wall becomes the E face that is parallel to electric field.The how long side direction (width of waveguide pipe) and the short side direction of the face of configuration cuts on perpendicular to the direction of the direction of principal axis (longitudinally) of waveguide pipe 22 are because of pattern (electromagnetic field in the waveguide pipe distributes) changes.

Slot antenna 23a～slot antenna 23f of Fig. 1 is located at the bottom ofwaveguide pipe 22a～waveguide pipe 22frespectively.Slot antenna 23a～slot antenna 23f is formed by for example aluminium metals such as (Al).Onslot antenna 23a～slot antenna 23f, be respectively equipped with a plurality of slits (opening).

Be respectively equipped with dielectric 24a～dielectric 24f in the bottom ofslot antenna 23a～slot antenna 23f.Each dielectric 24 is by for example quartzy, aluminium oxide (Al₂O₃) wait formation, so that see through microwave.

Dielectric 24a～dielectric 24f supports its two ends respectively by thebeam 26a～beam 26g that is formed by metals such as for example aluminium.In addition, bottom atbeam 26a～beam 26g, be fixed with thesupporter 27a～supporter 27g that forms by metal respectively, at each flue 28 of two end supports of theflue 28a～flue 28f that becomes a unit that constitutes gas supply pipe spare (gas supply mechanism (for example, gas spray head)).Moreover the distance between dielectric 24 and the flue 28 is about 25mm.In addition, the distance between dielectric 24 and thepedestal 11 is for about 70mm～210mm.

Flue 28 is by aluminium oxide (Al₂O₃) wait dielectric to form.Therefore, compared by the prior art that metal forms with flue 28, the influence of the sheath layer of the surface of flue 28 is little, causes the electromagnetic field of near surface of flue 28 not disturbed, the distribution that non-warping plasma generates.As a result, can generate more uniform plasma.In addition, the problem that produces in the time of can eliminating the gas spray head and form by metal, i.e. flue 28 thermal deformations (for example, gas supply pipe spare is because of the crooked or fusing of heat of plasma), or flue 28 corrodes such problem in plasma treatment.

In addition, flue 28 is a tubulose, and its diameter is about 8mm.As the shown in Figure 2 of flue 28 sides that look up frompedestal 11 sides, on each flue 28, be provided with and supply gas to the pore of using in the container handling (pore).The diameter of this pore is about 0.5mm.

So, dielectric flue 28 is by being supported by supporter 27 and can guarantee the rigidity that the gas spray head is all, and can make gas spray head large tracts of landization by the radical that increases flue 28.In addition, as flue 28 because of the situation of the bump deterioration of the ion in the processing procedure etc., when producing unfavorable condition on the flue 28, only change produce unfavorable condition pipe fitting just can, it is all to there is no need to change the gas spray head.As a result, the maintenance management of microwaveplasma processing apparatus 100 becomes easily, and can reduce the needed expense of maintenance of microwaveplasma processing apparatus 100.

In addition, form by metal by supporter 27, can be from of beam 26 heat radiations of the low dielectric flue 28 of heat conductivity to the supporter 27 and the metal of the high metal of heat conductivity.Its result can prevent that flue 28 from being high temperature because of the plasma heat forms in process is handled.

Constitute by this of above explanation, propagate amongwaveguide pipe 22a～waveguide pipe 22f frommicrowave generator 29a～microwave generator 29f microwave that exported, for example 2.45GHz, by being located at the slit onslot antenna 23a～slot antenna 23f, see throughdielectric 24a～dielectric 24f and incide in the container handling, propagate into a plurality of flues 28.

(the first gas feed unit and the second gas feed unit)

Next, describe with regard to the gas supply mechanism of the microwaveplasma processing apparatus 100 of present embodiment, the action with regard to the first gas feed unit and the second gas feed unit describes then.

The inside ofgas introduction tube 30a～gas introduction tube 30g throughbeam 26a～beam 26g.In each gas introduction tube 30, as shown in Figure 1, at the end ofgas introduction tube 30a,gas introduction tube 30c,gas introduction tube 30e andgas introduction tube 30g via the argon gas feed source 32a4 in thefirst stream 31a connection processing gas supply source 32.In addition, ongas introduction tube 30b,gas introduction tube 30d andgas introduction tube 30f, via silane gas supply source 32b4 and the hydrogen supply source 32b8 in thesecond stream 31b connection processinggas supply source 32.

Handlinggas supply source 32 is made of valve 32a1, mass flow controller 32a2, valve 32a3, argon gas feed source 32a4, valve 32b1, mass flow controller 32b2, valve 32b3 and silane gas supply source 32b4, valve 32b5, mass flow controller 32b6, valve 32b7 and hydrogen supply source 32b8.

Handle the switching ofgas supply source 32, respectively with argon (Ar) gas (be equivalent to first and handle gas), silane (SiH by control valve 32a1, valve 32a3, valve 32b1 and valve 32b3, valve 32b5 and valve 32b7₄) gas and hydrogen (H₂) gas (be equivalent to second handle gas) supplies in the container handling.In addition, mass flow controller 32a2, mass flow controller 32b2 and mass flow controller 32b6 supply to the gas of needed concentration in the container handling by the flow of controlling the processing gas of supplying with respectively.

In addition, represent its part as Fig. 3, on the other end ofgas introduction tube 30a, thegas introduction tube 30c,gas introduction tube 30e and thegas introduction tube 30g that supply with argon gas, be connected with an end of the path A (being equivalent to first path) ofsupporter 27a,supporter 27c,supporter 27e and thesupporter 27g inside of below each beam 26, extending.The other end of path A is at the upper opening of flue 28.

In addition, on the other end of thegas introduction tube 30b, thegas introduction tube 30d that supply with silane gas and hydrogen andgas introduction tube 30f, be connected with the end of the path B (being equivalent to second path) of thesupporter 27b, thesupporter 27d that extend from each beam 26 andsupporter 27f inside.And then the other end of path B is connected an end of the flue 28 that is supported by supporter 27.

Utilize this gas supply mechanism, the first gas feed unit is fromgas introduction tube 30a,gas introduction tube 30c,gas introduction tube 30e andgas introduction tube 30g and each path A of being connected to these gas introduction tubes 30, and argon gas is released to space between each dielectric 24 and each flue 28.

Microwaveplasma processing apparatus 100 incides the microwave in the container handling by seeing through each dielectric 24, by the argon gas that is released to the space between each dielectric 24 and each flue 28, plasma P 1 takes place.

On the other hand, the second gas feed unit is viagas introduction tube 30b,gas introduction tube 30d,gas introduction tube 30f and be connected to each path B of these gas introduction tubes 30, silane gas and hydrogen is released to the bottom of flue 28 from being located at pore on the flue 28.

Microwaveplasma processing apparatus 100 is consumed energy when generating plasma P 1, utilizes the microwave that weakens, by the silane gas and the hydrogen generation plasma P 2 that are released to flue 28 bottoms with spraying shape.

Thus, by inert argon strong plasma can take place, and can make suitably plasmaization of active silane gas and hydrogen.Here, so-called " suitably plasmaization " for example is meant that silane gas is by the microwave that weakens a little SiH that dissociates₃Base is the SiH that excessively do not dissociate₂The disassociation of the degree of base.

As above, the processing gas of two systems is supplied in the container handling by the first gas feed unit and the second gas feed unit respectively.Thus, can make two or more processing gas plasmaization respectively.In addition, many flues 28 are arranged on and supply with the first supply port below of handling gas.In a processing procedure, in the processing gas of plasmaization, at first, first handles gas by plasmaization, makes second to handle gaseous plasmaization by this plasma respectively thus.As a result, do not promote second to handle the disassociation of gas, can implement needed plasma treatment substrate.

In contrast, for example, suppress lowly and during situation suitably dissociating gas at the power of considering the microwave by with incident the time because the plasma that is generated becomes unstable, the disassociation of gas also not necessarily, so can't generate the amorphous silicon film of high-quality.But if with the microwaveplasma processing apparatus 100 of present embodiment, the power of the microwave when then not suppressing incident can generate the very amorphous silicon film of high-quality by the plasma P 1 and the plasma P 2 that produce on substrate W.

As described above, utilize the microwaveplasma processing apparatus 100 of present embodiment, first handles gas (argon gas) supplies with from first path (path A), and second handles gas (silane gas and hydrogen) supplies with from many gas supply pipe spares (flue 28) via second path (path B).Thus, can implement needed plasma treatment by the plasma that produces to substrate respectively.In addition, form by many gas supply pipe spares, can not only guarantee the rigidity that the gas spray head is all but also make gas spray head large tracts of landization easily by the gas spray head.

More than first of explanation handle gas, the preferred big inert gas of molecule binding energy.In addition, second handle the little reactant gas of the preferred molecule binding energy of gas.The ionization energy of argon gas is 15.759 (eV).In addition, the molecule binding energy of H and H is 4.48 (eV), and the molecule binding energy of Si and H is 3.2 (eV).Therefore, in amorphous silicon CVD handled, the molecule binding energy was handled gas greater than the argon gas of silane or hydrogen as first and is supplied with from the top of container handling, and silane or hydrogen are handled the underfeed of gas from container handling as second.

In the respective embodiments described above, the action of each several part is interrelated, on one side can consider mutual association, Yi Bian replace as a series of action.Thereby, by as the displacement, more than the invention of Shuo Ming plasma processing apparatus can be used as the invention execution mode of method of plasma processing.

More than, describe with regard to preferred implementation of the present invention with reference to accompanying drawing, but the present invention is not limited to these examples certainly.So long as the professional and technical personnel in the category described in claims, can expect it being conspicuous in various variation or correction example, should be noted that relevant these also belong to technical scope of the present invention certainly.

For example, plasma processing apparatus, be not limited to microwave plasma processing apparatus, so long as inductance coupling high type plasma processing apparatus or ECR (electron-cyclotron-resonance) plasma processing apparatus etc., make the plasma processing apparatus of type of plasma diffusion just passable.

In addition, as the processing gas of being supplied with, for example, first handle gas can be the big gas of molecule binding energy (for example, easy Ionized inert gas (argon gas, xenon (Xe) etc.)), the second processing gas can be the little gas of molecule binding energy (for example, silane gas (SiH₄), hydrogen (H₂) isoreactivity gas).

In addition, handling gas as the first processing gas and second and be not limited to film forming gas, also can be etching gas, sputter gas etc.

In addition, gas introduction part among the present invention also can not only be made ofgas introduction tube 30a～gas introduction tube 30g, also can only constitute by thefirst stream 31a and thesecond stream 31b, perhaps, also can constitute bygas introduction tube 30a～gas introduction tube 30g, thefirst stream 31a and thesecond stream 31b.

In addition, supporter 27 of the present invention also can be fixed in the mode that can move (scalable) with respect to container handling 10 up and down.According to these, moving up and down by the flexible position of a plurality of flues 28 that makes of supporter 27, can emit second position of handling gas by appropriate change.Thus, consider when first handles gaseous plasma by the electromagnetic field that weakens or with handle the collision of the plasma that gas takes place and second handle gas by first by plasmaization, can gas supply pipe spare be moved to the position that best plasma takes place based on the character of the processing gas of being supplied with.As a result, can handle gas by second and generate more equably that electron temperature (Te) is low, the high plasma of electron density (Ne).

In addition, insupporter 27a～supporter 27g inside, be provided with any of first path or second path.But, the invention is not restricted to this,supporter 27a～supporter 27g also within it portion first path and second path, two sides are set, and any the mechanism that can select first path or second path is set, supply gas to the path of selection.

In addition, many gas supply pipe spares are preferably formed by dielectrics such as pottery, quartz, glass tubes, but also can be by nonmetal formation such as resins.

Utilizability on the industry

The present invention can be applicable to that utilizing many gas supply pipe spares will process gas supplies to processing Plasma processing apparatus in the container.

Claims (10)

Translated fromChinese

1.一种等离子体处理装置，由微波使供给到处理容器内的处理气体等离子体化，并对基板进行等离子体处理，其特征在于，具有：1. A plasma processing apparatus for plasmaizing a processing gas supplied into a processing container by microwaves, and performing plasma processing on a substrate, characterized in that it has:导入处理气体的、被分为第一气体导入部和第二气体导入部的多个气体导入部；a plurality of gas introduction parts divided into a first gas introduction part and a second gas introduction part for introducing a process gas;多根气体供给管件；Multiple gas supply pipes;将导入到所述第一气体导入部的第一处理气体放出到所述处理容器内的第一气体供给单元；和a first gas supply unit that discharges the first processing gas introduced into the first gas introduction part into the processing container; and利用所述多根气体供给管件将导入到所述第二气体导入部的第二处理气体放出到所述处理容器内的第二气体供给单元。A second gas supply unit that discharges the second processing gas introduced into the second gas introduction part to the processing container through the plurality of gas supply pipes.2.如权利要求1所述的等离子体处理装置，其特征在于：2. The plasma processing apparatus according to claim 1, characterized in that:所述多根气体供给管件设置在供给所述第一处理气体的所述第一气体供给单元的供给口的下方。The plurality of gas supply pipes are disposed below a supply port of the first gas supply unit that supplies the first processing gas.3.如权利要求1或2任一项所述的等离子体处理装置，其特征在于：所述多根气体供给管件由非金属形成。3. The plasma processing apparatus according to any one of claims 1 or 2, wherein the plurality of gas supply pipes are made of non-metal.4.如权利要求3所述的等离子体处理装置，其特征在于：4. The plasma processing apparatus according to claim 3, characterized in that:形成所述多根气体供给管件的非金属是电介质。The non-metal forming the plurality of gas supply tubes is a dielectric.5.如权利要求1或2所述的等离子体处理装置，其特征在于：所述多根气体供给管件上分别设有多个气孔，5. The plasma processing device according to claim 1 or 2, characterized in that: the plurality of gas supply pipes are respectively provided with a plurality of air holes,所述第二气体供给单元从分别设在所述多根气体供给管件上的多个气孔，将所述第二处理气体喷淋状地放出到所述处理容器内。The second gas supply unit discharges the second processing gas into the processing container in a shower form from a plurality of gas holes respectively provided on the plurality of gas supply pipes.6.如权利要求1或2所述的等离子体处理装置，其特征在于：还具有支撑所述多根气体供给管件的支撑体。6. The plasma processing apparatus according to claim 1 or 2, further comprising a support body supporting the plurality of gas supply pipes.7.如权利要求6所述的等离子体处理装置，其特征在于：7. The plasma processing apparatus according to claim 6, characterized in that:所述支撑体由金属形成。The support body is formed of metal.8.如权利要求6所述的等离子体处理装置，其特征在于：所述支撑体以相对于所述处理容器可伸缩的方式固定。8. The plasma processing apparatus according to claim 6, wherein the supporting body is fixed in a telescopic manner relative to the processing container.9.如权利要求6所述的等离子体处理装置，其特征在于：设置多个所述支撑体，9. The plasma processing apparatus according to claim 6, wherein a plurality of said support bodies are provided,在所述多个支撑体的内部设有分别连接于所述多个气体导入部的第一路径或第二路径的至少一个，At least one of the first path or the second path respectively connected to the plurality of gas introduction parts is provided inside the plurality of supports,所述第一气体供给单元经由所述第一气体导入部从所述第一路径供给所述第一处理气体，the first gas supply unit supplies the first processing gas from the first path via the first gas introduction part,所述第二气体供给单元经由所述第二气体导入部和与该第二气体导入部连接的所述第二路径从所述多根气体供给管件供给所述第二处理气体。The second gas supply unit supplies the second processing gas from the plurality of gas supply pipes through the second gas introduction part and the second path connected to the second gas introduction part.10.一种等离子体处理方法，用于由微波使供给到处理容器内的处理气体等离子体化，并对基板进行等离子体处理，其特征在于，包括：10. A plasma processing method for plasmaizing a processing gas supplied into a processing container by microwaves and performing plasma processing on a substrate, comprising:经由导入处理气体的多个气体导入部中的第一气体导入部，从连接于所述第一气体导入部的第一路径，将第一处理气体供给到所述处理容器内的工序；和a step of supplying a first processing gas into the processing container from a first path connected to the first gas introduction part through a first gas introduction part among the plurality of gas introduction parts for introducing the processing gas; and经由所述多个气体导入部中的第二气体导入部和连接于所述第二气体导入部的第二路径，从多根气体供给管件，将第二处理气体供给到所述处理容器内的工序。A second process gas is supplied from a plurality of gas supply pipes to the processing container through a second gas introduction part among the plurality of gas introduction parts and a second path connected to the second gas introduction part. process.

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