CN100505186C - Method for manufacturing vertical thin film transistor - Google Patents
Method for manufacturing vertical thin film transistorDownload PDFInfo
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- CN100505186C CN100505186CCNB2006101214709ACN200610121470ACN100505186CCN 100505186 CCN100505186 CCN 100505186CCN B2006101214709 ACNB2006101214709 ACN B2006101214709ACN 200610121470 ACN200610121470 ACN 200610121470ACN 100505186 CCN100505186 CCN 100505186C
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Abstract
Description
Technical field
The present invention relates to a kind of semiconductor element, and particularly relate to a kind of manufacture method of vertical thin-film transistor.
Background technology
Along with the maturation of technology, lighter, thinner, portability, the display of deflection such as the attention that electronic paper has attracted numerous people, many major companies also add the research and development ranks one after another.OTFT (OTFT) is to utilize organic molecule material to develop the thin-film transistor that is fit to be applied to electronic product, its great advantage is that element can make at low temperatures, and the transistor unit characteristic still can be kept when panel bending, reach normal video picture mass effect, this application can be quickened the realization of bendable electronic product such as display.
The advantage of the OTFT of vertical stratification is that it can have higher mobility (Mobility), can be used for the element application than higher-frequency, and lower working bias voltage is arranged.Yet upward degree of difficulty is higher in making for the vertical stratification OTFT.Generally speaking, utilize traditional semiconductor technology to make the element of vertical stratification, need carry out multiple tracks coating process and Patternized technique, therefore need to make the multiaspect photomask.Not only on technology, make comparatively complexity, manufacturing cost is risen.And, all destroy to some extent through the organic semiconductor characteristic after the photoengraving carving technology, and make and can't obtain good element characteristic through the OTFT of the vertical stratification of method made thus.
Summary of the invention
Purpose of the present invention is exactly that a kind of manufacture method of vertical thin-film transistor is being provided, and can simplify the OTFT technology of vertical stratification.
A further object of the present invention provides a kind of manufacture method of vertical thin-film transistor, the OTFT of can low temperature process making vertical stratification.
Another purpose of the present invention provides a kind of manufacture method of vertical thin-film transistor, makes OTFT have lower working bias voltage, and obtains preferred element characteristic.
The present invention proposes a kind of manufacture method of vertical thin-film transistor, comprises the following steps.At first, provide substrate, be formed with the grid layer of patterning on this substrate.Baffle light mask is set on grid layer, and this baffle light mask has the part substrate that opening exposes grid layer one side.Then, be mask with the baffle light mask, on the substrate that opening exposed, form first source, semiconductor layer and second source in regular turn.After removing baffle light mask, between stack layer that constitutes by first source, semiconductor layer and second source and grid layer, form gate dielectric layer.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the material of aforementioned first source and second source is an electric conducting material.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the formation method of aforementioned first source and aforementioned second source is for carrying out physical gas-phase deposition.Aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the material of aforesaid semiconductor layer is organic semiconducting materials or inorganic semiconductor material.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the aforesaid semiconductor layer is to be selected from one of them of N type, P type, micromolecule or high molecular organic semiconducting materials; And zinc oxide or inorganic semiconductor material through mixing.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the formation method of aforesaid semiconductor layer is for carrying out physical gas-phase deposition or spraying coating process.Aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the formation method of aforementioned gate dielectric layer comprises one of them of carrying out chemical vapour deposition technique, method for printing, method of spin coating, ink-jet method, infusion method or vapour deposition method.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, aforesaid substrate comprises silicon substrate, flexible base plate or glass substrate.
In the manufacture method of vertical OTFT of the present invention, owing to define grid layer earlier, and then make first source, semiconductor layer and second source with baffle light mask.Because grid layer has the function of fin (Rib), after baffle light mask is put, can accurately control the plated film area of first source, semiconductor layer and second source, can prevent its short circuit.
And, thickness by accurate control grid layer, can control the coating film area of first source, semiconductor layer and second source accurately, therefore after gate dielectric layer forms, not having short circuit condition between grid layer and the stack layer takes place, have simultaneously thin gate dielectric layer thickness again, thereby can reduce the operation bias voltage of element, also have bigger firing current simultaneously.
In addition, in the manufacture method of above-mentioned vertical OTFT, after forming semiconductor layer, do not use the photoengraving carving technology, therefore can avoid semiconductor layer to wreck yet, and can obtain good element characteristic.
The present invention proposes a kind of manufacture method of vertical thin-film transistor again, comprises the following steps.At first, provide substrate, and first baffle light mask is set on substrate, this first baffle light mask has first opening and exposes the part substrate.Then, be mask with first baffle light mask, on the substrate that first opening is exposed, form the stack layer that constitutes by first source, semiconductor layer and second source.After removing first baffle light mask, on substrate, form gate dielectric layer.Then, the second baffle photomask is set on substrate, this second baffle photomask has second opening and exposes stack layer one side.Then, be mask with the second baffle photomask, form grid layer in stack layer one side.Afterwards, remove the second baffle photomask.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the material of aforementioned first source and aforementioned second source is an electric conducting material.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the formation method of aforementioned first source and aforementioned second source is for carrying out physical gas-phase deposition.Aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the material of aforesaid semiconductor layer is organic semiconducting materials or inorganic semiconductor material.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the aforesaid semiconductor layer is to be selected from one of them of N type, P type, micromolecule or high molecular organic semiconducting materials; And zinc oxide or inorganic semiconductor material through mixing.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the formation method of aforesaid semiconductor layer is for carrying out physical gas-phase deposition or spraying coating process.Aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, the formation method of aforementioned gate dielectric layer comprises one of them of carrying out chemical vapour deposition technique, method for printing, method of spin coating, ink-jet method, infusion method or vapour deposition method.
According to the manufacture method of the described vertical thin-film transistor of the preferred embodiments of the present invention, aforesaid substrate comprises silicon substrate, flexible base plate or glass substrate.
In the manufacture method of the vertical OTFT of the present invention, owing to make first source, semiconductor layer and second source with first baffle light mask, therefore can accurately control the plated film area and the thickness of first source, semiconductor layer and second source.
And, after gate dielectric layer formation finishes, make grid layer with the second baffle photomask again.Therefore, do not have short circuit condition between grid layer and the stack layer and take place, have thin gate dielectric layer thickness simultaneously again, thereby can reduce the operation bias voltage of element, and make element have bigger firing current.
In addition, in the manufacture method of above-mentioned vertical OTFT, after forming semiconductor layer, do not use the photoengraving carving technology, therefore can avoid semiconductor layer to wreck yet, and can obtain good element characteristic.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A～Fig. 1 D is the local top view that illustrates the making flow process of the vertical OTFT in the first embodiment of the invention.
Fig. 2 A～Fig. 2 D is for illustrating among Figure 1A～Fig. 1 D the part sectioned view along A-A ' line respectively.
Fig. 3 A～Fig. 3 D is the part sectioned view that illustrates the making flow process of the vertical OTFT in the second embodiment of the invention.
The simple symbol explanation
100,200: substrate
102,218: grid layer.
104,202,214: baffle light mask
106,203,216: opening
108,114,204,208: source
110: the gap
112,206: semiconductor layer
116,210: stack layer
118,212: gate dielectric layer
Embodiment
First embodiment
Figure 1A～Fig. 1 D is the local top view of making flow process that illustrates the vertical OTFT of first embodiment of the invention.Fig. 2 A～Fig. 2 D is for illustrating among Figure 1A～Fig. 1 D the part sectioned view along A-A ' line respectively.
Please refer to Figure 1A and Fig. 2 A,substrate 100 at first is provided.Plastic base, silicon substrate, flexible base plate or transparent glass substrate that thissubstrate 100 for example is a flexible.
Then, onsubstrate 100, form thegrid layer 102 of patterning.The material of thegrid layer 102 of patterning comprises conductor material, for example is metal (alloy of aluminium, copper, molybdenum, chromium or previous materials etc.) or doped polycrystalline silicon etc.The formation method ofgrid layer 102 for example is to adopt baffle light mask (not illustrating), cooperate physical gas-phase deposition and thegrid layer 102 of patterning directly can be formed on thesubstrate 100, and physical gas-phase deposition for example is sputtering technology or evaporation process.In addition, the formation method ofgrid layer 102 also can be general photoengraving carving technology, that is be after forming one deck conductor material layer (not illustrating) on prior tosubstrate 100, the patterning photoresist layer (not illustrating) that utilization is formed on the conductor material layer cooperates etch process, with thegrid layer 102 that defines patterning.Thegrid layer 102 of patterning for example is to arrange into strips, and can make the employed baffle light mask of technology (shadow mask) of follow-up formation source and semiconductor layer placed thereon.Certainly, in another preferred embodiment, thegrid layer 102 of patterning also can be to be column, is arranged in the array kenel onsubstrate 100.
Please refer to Figure 1B and Fig. 2 B, ongrid layer 102, place baffle light mask 104.Baffle light mask also can be arranged on thegrid layer 102 in the mode of fitting.Bafflelight mask 104 has thepart substrate 100 that opening 106 exposesgrid layer 102 1 sides.The material ofbaffle light mask 104 for example is stalloy, silicon wafer or acrylic plate or the like.
Withbaffle light mask 104 is mask,forms source 108 on thesubstrate 100 that opening 106 is exposed.Has gap 110 betweensource 108 and the grid layer 102.The material ofsource 108 comprises electric conducting material, for example is metal (alloy of aluminium, copper, molybdenum, chromium or previous materials etc.).The formation method ofsource 108 comprises carries out physical gas-phase deposition, and physical gas-phase deposition for example is sputtering technology or evaporation process.
Please refer to Fig. 1 C and Fig. 2 C, is mask withbaffle light mask 104, formssemiconductor layer 112 on thesource 108 that opening 106 is exposed.The material ofsemiconductor layer 112 comprises N type, P type, micromolecule or high molecular organic semiconducting materials, for example be pentacene (pentacene) or poly-(3-hexyl thiophene) (poly-(3-hexylthiophene), P3HT) etc.The material ofsemiconductor layer 112 also can be zinc oxide or the inorganic semiconductor material through mixing.The formation method ofsemiconductor layer 112 is for carrying out physical gas-phase deposition or spraying coating process.Physical gas-phase deposition comprises sputtering technology or evaporation process.
Then, be mask withbaffle light mask 104, on thesemiconductor layer 112 that opening 106 is exposed, form source 114.The material ofsource 114 comprises electric conducting material, for example is metal (alloy of aluminium, copper, molybdenum, chromium or previous materials etc.).The formation method ofsource 114 comprises carries out physical gas-phase deposition, and physical gas-phase deposition for example is sputtering technology orevaporation process.Source 108,semiconductor layer 112 constitute stack layer 116 with source 114.Between stack layer 116 andgrid layer 102, hasgap 110 equally.
Please refer to Fig. 1 D and Fig. 2 D, removebaffle light mask 104 after, gap between stack layer 116 andgrid layer 102 110 forms gate dielectric layers 118.And gatedielectric layer 118 also covers the end face and the sidewall ofsubstrate 100,grid layer 102 and stack layer 116 comprehensively and continuously.The material of gatedielectric layer 118 for example is silica, silicon nitride or organic dielectric layer.The formation method of gatedielectric layer 118 for example is to carry out chemical vapour deposition technique, method for printing, method of spin coating, ink-jet method, infusion method or vapour deposition method.
In the manufacture method of the vertical OTFT of the first embodiment of the present invention, becausedefinition grid layer 102 and outside line (not illustrating) earlier, and then makesource 108,semiconductor layer 112 andsource 114 with baffle light mask.Becausegrid layer 102 has the function of fin (Rib), after baffle light mask is put, can accurately control the plated film area ofsource 108,semiconductor layer 112 andsource 114, can prevent its short circuit.
And, thickness by accuratecontrol grid layer 102, can control the coating film area ofsource 108,semiconductor layer 112 andsource 114 accurately, therefore after gatedielectric layer 118 forms, not having short circuit condition betweengrid layer 102 and the stack layer 116 takes place, have simultaneously thin gatedielectric layer 118 thickness again, thereby can reduce the operation bias voltage of element, and make element have bigger firing current.
And, in the manufacture method of above-mentioned vertical OTFT, after forming semiconductor layer, do not use the photoengraving carving technology, therefore also can avoid semiconductor layer to wreck, and can obtain good element characteristic.
Second embodiment
Fig. 3 A～Fig. 3 D is the part sectioned view that illustrates the making flow process of the vertical OTFT in the second embodiment of the invention.
Please refer to Fig. 3 A,substrate 200 at first is provided.Plastic base, silicon substrate, flexible base plate or transparent glass substrate that thissubstrate 200 for example is a flexible.
Then,baffle light mask 202 is set on substrate 200.Bafflelight mask 202 has opening 203 expose portion substrates 200.The material ofbaffle light mask 202 for example is stalloy, silicon wafer or acrylic plate or the like.
Withbaffle light mask 202 is mask,forms source 204 on thesubstrate 100 that opening 203 is exposed.The material ofsource 204 comprises electric conducting material, for example is metal (alloy of aluminium, copper, molybdenum, chromium or previous materials etc.).The formation method ofsource 204 comprises carries out physical gas-phase deposition, and physical gas-phase deposition for example is sputtering technology or evaporation process.
Please refer to Fig. 3 B, is mask with bafflelight mask 202, formssemiconductor layer 206 on thesource 204 that opening 202 is exposed.The material ofsemiconductor layer 206 comprises N type, P type, micromolecule or high molecular organic semiconducting materials, for example be pentacene (pentacene) or poly-(3-hexyl thiophene) (poly-(3-hexylthiophene), P3HT) etc.The material ofsemiconductor layer 206 also can be zinc oxide or the inorganic semiconductor material through mixing.The formation method ofsemiconductor layer 206 is for carrying out physical gas-phase deposition or spraying coating process.Physical gas-phase deposition comprises sputtering technology or evaporation process.
Then, be mask with bafflelight mask 202, on thesemiconductor layer 206 that opening 203 is exposed, form source 208.The material ofsource 208 comprises electric conducting material, for example is metal (alloy of aluminium, copper, molybdenum, chromium or previous materials etc.).The formation method ofsource 208 comprises carries out physical gas-phase deposition, and physical gas-phase deposition for example is sputtering technology orevaporation process.Source 208,semiconductor layer 206 constitutestack layer 210 withsource 204.
Please refer to Fig. 3 C, remove bafflelight mask 202 after, onsubstrate 200, form gate dielectric layer 212.And gatedielectric layer 212 also covers the end face and the sidewall ofstack layer 210 comprehensively and continuously.The material ofgate dielectric layer 118 for example is silica, silicon nitride or organic dielectric layer.The formation method ofgate dielectric layer 118 for example is to carry out chemical vapour deposition technique, method for printing, method of spin coating, ink-jet method, infusion method or vapour deposition method.
Please refer to Fig. 3 D, bafflelight mask 214 is set on stack layer 210.Baffle light mask 214 has the side that opening 216 exposes stack layer 210.With bafflelight mask 214 is mask, in the sideformation grid layer 218 of stack layer 210.The material ofgrid layer 218 comprises conductor material, for example is metal (alloy of aluminium, copper, molybdenum, chromium or previous materials etc.).The formation method ofgrid layer 218 comprises carries out physical gas-phase deposition, and physical gas-phase deposition for example is sputtering technology or evaporation process.Afterwards, remove bafflelight mask 214 again.
In the manufacture method of the vertical OTFT of the second embodiment of the present invention, owing to makesource 204,semiconductor layer 206 andsource 208 with bafflelight mask 202, therefore can accurately control the plated film area and the thickness ofsource 204,semiconductor layer 206 andsource 208.
And, aftergate dielectric layer 212 formation finish, makegrid layers 218 with bafflelight mask 214 again.Therefore, do not have short circuit condition betweengrid layer 218 and thestack layer 210 and take place, have thingate dielectric layer 212 thickness simultaneously again, thereby can reduce the operation bias voltage of element, and make element have bigger firing current.
In addition, in the manufacture method of above-mentioned vertical OTFT, after forming semiconductor layer, do not use the photoengraving carving technology, therefore can avoid semiconductor layer to wreck yet, and can obtain good element characteristic.
In sum, the manufacture method of vertical OTFT of the present invention is owing to utilize single photo mask definition drain electrode, semiconductor layer and source electrode.Except can technology oversimplifying, it can be applied to component integration and large tracts of landization simultaneously, can be used for display.And the OTFT of can low temperature process making vertical stratification makes OTFT have lower working bias voltage, and obtains preferred element characteristic.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (20)
1, a kind of manufacture method of vertical thin-film transistor comprises:
Substrate is provided, has been formed with the grid layer of patterning on the aforesaid substrate;
On aforementioned grid layer baffle light mask is set, the said baffle photomask has the part aforesaid substrate that opening exposes aforementioned grid layer one side;
With aforementioned baffle light mask is mask, forms first source, semiconductor layer and second source on the aforesaid substrate that aforementioned opening exposed in regular turn;
Remove the said baffle photomask; And
Between stack layer that constitutes by aforementioned first source, aforesaid semiconductor layer and aforementioned second source and aforementioned grid layer, form gate dielectric layer.
2, the manufacture method of vertical thin-film transistor as claimed in claim 1, the material of wherein aforementioned first source and aforementioned second source comprises electric conducting material.
3, the manufacture method of vertical thin-film transistor as claimed in claim 2, the formation method of wherein aforementioned first source and aforementioned second source comprise carries out physical gas-phase deposition.
4, the manufacture method of vertical thin-film transistor as claimed in claim 3, wherein aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
5, the manufacture method of vertical thin-film transistor as claimed in claim 1, wherein the material of aforesaid semiconductor layer comprises organic semiconducting materials or inorganic semiconductor material.
6, the manufacture method of vertical thin-film transistor as claimed in claim 1, wherein the aforesaid semiconductor layer is for being selected from N type, P type, micromolecule or high molecular organic semiconducting materials; And one of them of zinc oxide or inorganic semiconductor material through mixing.
7, the manufacture method of vertical thin-film transistor as claimed in claim 5, wherein the formation method of aforesaid semiconductor layer is for carrying out physical gas-phase deposition or spraying coating process.
8, the manufacture method of vertical thin-film transistor as claimed in claim 7, wherein aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
9, the manufacture method of vertical thin-film transistor as claimed in claim 1, wherein the formation method of aforementioned gate dielectric layer comprises one of them of carrying out chemical vapour deposition technique, method for printing, method of spin coating, ink-jet method, infusion method or vapour deposition method.
10, the manufacture method of vertical thin-film transistor as claimed in claim 1, wherein aforesaid substrate comprises silicon substrate, flexible base plate or glass substrate.
11, a kind of manufacture method of vertical thin-film transistor comprises:
Substrate is provided;
First baffle light mask is set on aforesaid substrate, and aforementioned first baffle light mask has first opening and exposes the part aforesaid substrate;
With aforementioned first baffle light mask is mask, forms the stack layer that is made of first source, semiconductor layer and second source on the aforesaid substrate that aforementioned first opening is exposed;
Remove aforementioned first baffle light mask;
On aforesaid substrate, form gate dielectric layer;
The second baffle photomask is set on aforesaid substrate, and aforementioned second baffle photomask has second opening and exposes aforementioned stack layer one side;
With aforementioned second baffle photomask is mask, forms grid layer in aforementioned stack layer one side; And
Remove aforementioned second baffle photomask.
12, the manufacture method of vertical thin-film transistor as claimed in claim 11, the material of wherein aforementioned first source and aforementioned second source comprises electric conducting material.
13, the manufacture method of vertical thin-film transistor as claimed in claim 12, the formation method of wherein aforementioned first source and aforementioned second source comprise carries out physical gas-phase deposition.
14, the manufacture method of vertical thin-film transistor as claimed in claim 13, wherein aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
15, the manufacture method of vertical thin-film transistor as claimed in claim 11, wherein the material of aforesaid semiconductor layer comprises organic semiconducting materials or inorganic semiconductor material.
16, the manufacture method of vertical thin-film transistor as claimed in claim 11, wherein the aforesaid semiconductor layer is to be selected from one of them of N type, P type, micromolecule or high molecular organic semiconducting materials; And zinc oxide or inorganic semiconductor material through mixing.
17, the manufacture method of vertical thin-film transistor as claimed in claim 15, wherein the formation method of aforesaid semiconductor layer comprises and carries out physical gas-phase deposition or spraying coating process.
18, the manufacture method of vertical thin-film transistor as claimed in claim 17, wherein aforementioned physical gas-phase deposition comprises sputtering technology or evaporation process.
19, the manufacture method of vertical thin-film transistor as claimed in claim 11, wherein the formation method of aforementioned gate dielectric layer comprises one of them of carrying out chemical vapour deposition technique, method for printing, method of spin coating, ink-jet method, infusion method or vapour deposition method.
20, the manufacture method of vertical thin-film transistor as claimed in claim 11, wherein aforesaid substrate comprises silicon substrate, flexible base plate or glass substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101214709ACN100505186C (en) | 2006-08-24 | 2006-08-24 | Method for manufacturing vertical thin film transistor |
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| CNB2006101214709ACN100505186C (en) | 2006-08-24 | 2006-08-24 | Method for manufacturing vertical thin film transistor |
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| CN100505186Ctrue CN100505186C (en) | 2009-06-24 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105655403B (en)* | 2014-12-03 | 2019-01-25 | 鸿富锦精密工业（深圳）有限公司 | A vertical thin film transistor and method of making the same |
| US9992437B1 (en)* | 2017-02-03 | 2018-06-05 | SmartSense Technology(U.S.), Inc. | Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor |
| CN108054141B (en)* | 2017-12-12 | 2020-11-06 | 深圳市华星光电技术有限公司 | Preparation method of display panel |
| CN118584714A (en)* | 2024-06-14 | 2024-09-03 | Tcl华星光电技术有限公司 | Display panel and method for preparing array substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003110110A (en)* | 2001-09-28 | 2003-04-11 | Ricoh Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2003282884A (en)* | 2002-03-26 | 2003-10-03 | Kansai Tlo Kk | Side gate type organic FET and organic EL |
| US20040175887A1 (en)* | 2003-03-03 | 2004-09-09 | Hynix Semiconductor Inc. | Magnetoresistive random access memory, and manufacturing method thereof |
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- 2006-08-24CNCNB2006101214709Apatent/CN100505186C/ennot_activeExpired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003110110A (en)* | 2001-09-28 | 2003-04-11 | Ricoh Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2003282884A (en)* | 2002-03-26 | 2003-10-03 | Kansai Tlo Kk | Side gate type organic FET and organic EL |
| US20040175887A1 (en)* | 2003-03-03 | 2004-09-09 | Hynix Semiconductor Inc. | Magnetoresistive random access memory, and manufacturing method thereof |
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