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技术领域technical field
本发明涉及一种用于平面化衬底表面的制造和设备的部件。The invention relates to a part of the manufacture and apparatus for planarizing the surface of a substrate.
背景技术Background technique
亚四分之一微米多层金属化是下一代超大规模集成电路(ULSI)的关键技术之一。位于这种技术最核心部位的多层互连要求对以高尺寸比孔径形成的互连结构进行平面化,这种互连结构包括接触、通路、线和其它结构。这种互连结构的可靠形成对于ULSI获得成功以及不断的努力以在单个衬底和晶片上增加电路密度和质量都非常重要。Sub-quarter-micron multilayer metallization is one of the key technologies for next-generation ultra-large-scale integration (ULSI). The multilevel interconnects at the heart of this technology require planarization of interconnect structures formed with high aspect ratio apertures, including contacts, vias, lines and other structures. Reliable formation of such interconnect structures is critical to the success of ULSI and to the ongoing effort to increase circuit density and quality on a single substrate and wafer.
在集成电路和其它电子器件的制造中,多层导电的、半导电的和介电材料淀积在衬底表面上或从衬底表面除去这些材料。薄层的导电、半导电、和介电材料可以通过很多淀积技术进行淀积。在当代处理工艺中常用的淀积技术包括物理汽相淀积(PVD)、又被称为溅射,化学汽相淀积(CVD),等离子体增强化学汽相淀积(PECVD),和电化学镀覆(ECP)。In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconductive and dielectric materials are deposited on or removed from substrate surfaces. Thin layers of conductive, semiconductive, and dielectric materials can be deposited by a number of deposition techniques. Deposition techniques commonly used in contemporary processing techniques include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrodeposition Electroless Plating (ECP).
在连续淀积和除去材料层时,衬底的最上表面可以是在其整个表面上为非平坦的并要求平面化。平面化在除去不希望的表面构形和表面缺陷时是有用的,如粗糙表面、聚集材料、晶格缺陷、刮伤和被污染层或材料。在通过除去用于填充结构的多余淀积材料和提供用于后来金属化和处理的层的均匀表面而在衬底上形成结构时,平面化也是有用的。As layers of material are successively deposited and removed, the uppermost surface of the substrate may be non-planar across its entire surface and require planarization. Planarization is useful in removing unwanted surface topography and surface defects, such as rough surfaces, aggregated material, lattice defects, scratches, and contaminated layers or materials. Planarization is also useful in forming structures on a substrate by removing excess deposited material used to fill the structures and providing a uniform surface for subsequent metallization and processing layers.
化学机械平面化或化学机械抛光(CMP)是用于平面化衬底的常用技术。CMP利用化学成分,通常为浆料或其它流体媒质,用于从衬底选择除去材料。在常规CMP技术中,在CMP设备中衬底载体或抛光头安装在载体组件上并设置成与抛光垫接触。载体组件给衬底提供可控压力,对着抛光垫给衬底加压。由外部驱动力使该抛光垫相对于衬底移动。CMP设备实现了衬底表面和抛光垫之间的抛光或研磨运动,同时分散抛光成分以进行化学作用或机械作用并最终从衬底表面除去材料。Chemical mechanical planarization or chemical mechanical polishing (CMP) is a common technique for planarizing substrates. CMP utilizes a chemical composition, usually a slurry or other fluid medium, for the selective removal of material from a substrate. In conventional CMP techniques, a substrate carrier or polishing head is mounted on a carrier assembly and placed in contact with a polishing pad in a CMP apparatus. The carrier assembly provides a controlled pressure to the substrate, pressurizing the substrate against the polishing pad. The polishing pad is moved relative to the substrate by an external driving force. CMP equipment realizes the polishing or grinding motion between the substrate surface and the polishing pad, while dispersing the polishing components for chemical or mechanical action and finally removing material from the substrate surface.
在集成电路制造中日益增加使用的一种材料是铜,因为它的电特性是所希望的。然而,铜具有其本身特殊的制造问题。例如,铜难以构图和刻蚀,并采用新的工艺和技术如镶嵌或双镶嵌工艺用于形成铜衬底结构。One material that is increasingly used in integrated circuit fabrication is copper because of its desirable electrical properties. Copper, however, has its own unique manufacturing issues. For example, copper is difficult to pattern and etch, and new processes and technologies such as damascene or dual damascene processes are used to form copper substrate structures.
在镶嵌工艺中,结构被限定在介电材料中,然后用铜填充。在铜镶嵌制造中使用具有低介电常数即低于约3的介电材料。在淀积铜材料之前,在形成在介电材料中的结构的表面上保形地淀积阻挡层材料。然后将铜材料淀积在阻挡层以及周围区域上。然而,用铜填充结构通常导致在衬底表面上产生过量铜材料或过载,必须除去这些过量铜材料以在介电材料中形成铜填充结构并制备用于后来处理的衬底表面。In the damascene process, structures are defined in a dielectric material and then filled with copper. Dielectric materials with low dielectric constants, ie below about 3, are used in copper damascene fabrication. A barrier layer material is conformally deposited on the surface of the structure formed in the dielectric material prior to depositing the copper material. A copper material is then deposited over the barrier layer and the surrounding area. However, filling structures with copper typically results in excess copper material, or overloading, on the substrate surface that must be removed to form copper filling structures in the dielectric material and prepare the substrate surface for subsequent processing.
在抛光铜材料时遇到的一个挑战是导电材料和阻挡层之间的界面一般是非平面的,残余铜材料保留在由非平面界面形成的凸凹不平之物中。此外,通常以不同的速度从衬底表面除去导电材料和阻挡材料,这都将导致过量的铜材料作为残余物保留在衬底表面上。此外,衬底表面可具有不同表面构形,这取决于形成在其中的结构的密度或尺寸。以不同的除去速度沿着衬底表面的不同表面构形除去铜材料,这就难以实现从衬底表面有效地除去铜材料和难以实现衬底表面的最终平面化。One challenge encountered in polishing copper materials is that the interface between the conductive material and the barrier layer is generally non-planar and residual copper material remains in the asperities formed by the non-planar interface. In addition, conductive and barrier materials are typically removed from the substrate surface at different rates, which both result in excess copper material remaining as residue on the substrate surface. Furthermore, the substrate surface may have different surface topography depending on the density or size of the structures formed therein. Copper material is removed at different removal rates along different surface topography of the substrate surface, which makes it difficult to efficiently remove copper material from the substrate surface and to achieve final planarization of the substrate surface.
从衬底表面除去所有所希望的铜材料的一个方案是过抛光衬底表面。然而,过抛光一些材料可能导致形成构形缺陷,如在结构中形成突起或凹陷,这被称为形成凹陷,或者过量除去介电材料,这被称为腐蚀。由于凹陷和腐蚀造成的地形缺陷可能进一步导致非均匀除去附加材料,如设置在其下的阻挡层材料,并产生具有低于所希望的抛光质量的衬底表面。One approach to removing all of the desired copper material from the substrate surface is to overpolish the substrate surface. However, overpolishing some materials can lead to the formation of topographical defects, such as the formation of protrusions or depressions in the structure, known as dishing, or excessive removal of dielectric material, known as erosion. Topographical imperfections due to dishing and erosion can further lead to non-uniform removal of additional material, such as underlying barrier material, and produce a substrate surface with a less than desired polishing quality.
抛光铜表面的另一问题是由于使用低介电常数(低k)介电材料在衬底表面中形成铜镶嵌产生的。低k介电材料如碳掺杂氧化硅在常规的抛光压力(即约6psi)下、即向下力下可能变形或断裂,这将有害地影响衬底抛光质量和有害地影响器件形成。例如,衬底和抛光垫之间的相对旋转运动可能导致沿着衬底表面产生剪切力并使低k材料变形以形成地形缺陷,这将有害地影响后来的抛光。Another problem with polishing copper surfaces arises from the use of low-k (low-k) dielectric materials to form a copper damascene in the substrate surface. Low-k dielectric materials such as carbon-doped silicon oxide may deform or fracture under conventional polishing pressures (ie, about 6 psi), ie, downward force, which can detrimentally affect substrate polish quality and detrimentally affect device formation. For example, relative rotational motion between the substrate and polishing pad can cause shear forces along the substrate surface and deform the low-k material to form topographical defects, which can deleteriously affect subsequent polishing.
用于在低介电材料中抛光铜的一个方案是通过电化学机械抛光(ECMP)技术抛光铜。ECMP技术通过电化学溶解同时利用与CMP工艺相比减少的机械研磨从衬底除去导电材料。电化学溶解是通过在阴极和衬底表面之间施加偏压进行的,以便从衬底表面将导电材料除去到周围的电解液中。One approach for polishing copper in low-k materials is to polish copper by electrochemical mechanical polishing (ECMP) techniques. The ECMP technique removes conductive material from the substrate by electrochemical dissolution while utilizing reduced mechanical grinding compared to the CMP process. Electrochemical dissolution is performed by applying a bias voltage between the cathode and the substrate surface in order to remove conductive material from the substrate surface into the surrounding electrolyte.
在ECMP系统的一个实施例中,通过与衬底支承装置如衬底承载头中的衬底表面电连接的导电接触环施加偏压。然而,接触环被认为在衬底表面上展示电流的非均匀分布,这将导致非均匀分布,特别是在导电接触环不能有效地除去残余物的过抛光期间。机械研磨是通过使衬底与常规抛光垫接触并提供衬底和抛光垫之间的相对运动来进行的。然而,常规的抛光垫通常限制电解液流到衬底表面上。此外,抛光垫可由绝缘材料构成,这可能与给衬底表面施加偏压干扰,并导致材料在衬板面上的非均匀或可变的分布。In one embodiment of the ECMP system, the bias voltage is applied through a conductive contact ring electrically connected to the substrate surface in a substrate support device, such as a substrate carrier head. However, contact rings are believed to exhibit a non-uniform distribution of electrical current over the substrate surface, which would result in a non-uniform distribution, especially during overpolishing where conductive contact rings are not effective in removing residues. Mechanical lapping is performed by bringing the substrate into contact with a conventional polishing pad and providing relative motion between the substrate and the polishing pad. However, conventional polishing pads generally restrict electrolyte flow to the substrate surface. In addition, the polishing pad may be composed of an insulating material, which may interfere with biasing the substrate surface and result in a non-uniform or variable distribution of material on the backing surface.
结果是,必须提供一种用于除去衬底表面上的导电材料的改进抛光部件。As a result, it is necessary to provide an improved polishing component for removing conductive material on a substrate surface.
发明内容Contents of the invention
本发明的方案一般提供采用电化学淀积技术、电化学溶解技术、抛光技术和/或其组合而用于平面化衬底上的层的制造和设备的设备。The aspects of the present invention generally provide apparatus for fabrication and apparatus for planarizing layers on a substrate using electrochemical deposition techniques, electrochemical dissolution techniques, polishing techniques, and/or combinations thereof.
在一个方案中,用于抛光衬底的抛光部件包括具有适于抛光衬底的表面的主体和至少部分地埋置在主体内的至少一个导电元件。该导电元件可包括用导电材料、导电填充物或其组合物质涂覆的纤维,其中上述涂覆材料可以设置在粘接剂材料中。导电元件可包括用至少部分地埋置在主体内的导电材料涂覆的中间纺织(Interwoven)纤维织物、用导电材料、导电填充物或其组合物质和粘接剂涂覆并至少部分地埋置在主体内的纤维组合物、或其组合。该导电元件可具有延伸到有抛光表面限定的平面之外的接触表面并可包括线圈、一个或多个环路、一股或多股线、中间纺织物纤维材料或其组合。可以在抛光部件中形成多个穿孔和多个沟槽,以便于材料流过抛光部件。In one aspect, a polishing member for polishing a substrate includes a body having a surface adapted to polish a substrate and at least one electrically conductive element at least partially embedded within the body. The conductive element may comprise fibers coated with a conductive material, a conductive filler, or a combination thereof, wherein said coating material may be disposed in a binder material. The conductive element may comprise an interwoven fiber fabric coated with a conductive material at least partially embedded in the body, coated with a conductive material, a conductive filler or a combination thereof and an adhesive and at least partially embedded A fiber composition, or a combination thereof, within a body. The conductive element may have a contact surface extending beyond the plane defined by the polishing surface and may comprise a coil, one or more loops, one or more strands, an intermediate textile fiber material, or combinations thereof. A plurality of perforations and a plurality of grooves may be formed in the polishing member to facilitate flow of material through the polishing member.
在另一方案中,提供一种用于处理衬底表面如淀积在衬底表面上的导电层的抛光部件。该抛光部件包括包括至少一部分纤维的主体,所述纤维用导电材料、导电填充物或其组合涂覆并适于抛光衬底。多个穿孔和多个沟槽可形成在抛光部件中,以便便于材料流过抛光部件和抛光部件周围。In another aspect, a polishing member for treating a substrate surface, such as a conductive layer deposited on a substrate surface, is provided. The polishing member includes a body including at least a portion of fibers coated with a conductive material, a conductive filler, or a combination thereof and adapted to polish a substrate. A plurality of perforations and a plurality of grooves may be formed in the polishing member to facilitate flow of material through and around the polishing member.
在另一方案中,该抛光部件可设置在用于处理衬底的设备中,包括盆、设置在盆中的可渗透盘、设置在可渗透盘上的抛光部件或制造部件、设置在可渗透盘和盆底之间的盆中的电极、以及在处理期间适于保持衬底的抛光头。In another aspect, the polishing component may be disposed in an apparatus for processing a substrate comprising a basin, a permeable disc disposed in the basin, a polishing component or fabrication component disposed on the permeable disc, disposed on a permeable An electrode in the basin between the plate and the basin floor, and a polishing head adapted to hold the substrate during processing.
在另一方案中,抛光部件可用作用于处理衬底的方法中的导电抛光部件,该方法包括提供包含包封的装置,在包封中设置导电抛光部件,以高达约20加仑/分钟(GPM)给包封输送导电溶液,在导电溶液中与导电抛光部件相邻设置衬底,在导电溶液中使衬底的表面与导电抛光部件接触,在电极和导电抛光部件之间施加偏压,和除去衬底表面的至少一个表面。In another aspect, the polishing component may be used as a conductive polishing component in a method for processing a substrate, the method comprising providing an apparatus comprising an enclosure in which the conductive polishing component is disposed at a rate of up to about 20 gallons per minute (GPM ) delivering a conductive solution to the enclosure, positioning a substrate in the conductive solution adjacent to the conductive polishing member, bringing a surface of the substrate into contact with the conductive polishing member in the conductive solution, applying a bias voltage between the electrode and the conductive polishing member, and At least one of the surfaces of the substrate is removed.
在本发明的另一实施例中,用于处理衬底的抛光部件包括具有设置在其上的导电层的编织层。导电层具有适于抛光衬底的暴露表面。该编织层可以是纺织物或无纺织物。导电层可包括软导电材料,在一个实施例中,暴露表面可以是平面的或凸起表面的。In another embodiment of the present invention, a polishing member for processing a substrate includes a braid having a conductive layer disposed thereon. The conductive layer has an exposed surface suitable for polishing the substrate. The woven layer can be a woven or a non-woven fabric. The conductive layer may comprise a soft conductive material, and in one embodiment, the exposed surface may be planar or raised.
在本发明的又一实施例中,用于处理衬底的抛光部件包括具有设置其上的导电层的导电编织层。该导电层具有适于抛光衬底的暴露表面。导电编织层可以是纺织物或无纺织物。导电层可由软导电材料构成,在一个实施例中,暴露表面可以是平面的或凸起表面的。In yet another embodiment of the present invention, a polishing member for processing a substrate includes a conductive braid having a conductive layer disposed thereon. The conductive layer has an exposed surface suitable for polishing the substrate. The conductive braid can be woven or non-woven. The conductive layer may be composed of a soft conductive material, and in one embodiment, the exposed surface may be planar or raised.
在本发明的又一实施例中,用于处理衬底的抛光部件包括具有设置其上的非导电层的导电编织层。该非导电层具有适于抛光衬底的暴露表面,并至少部分地暴露导电编织物以给抛光衬底施加正向偏压。导电编织层可以是纺织物或无纺织物。非导电层可由研磨剂材料构成,在一个实施例中,暴露表面可以是平面的或凸起表面的。In yet another embodiment of the present invention, a polishing member for processing a substrate includes a conductive braid having a non-conductive layer disposed thereon. The non-conductive layer has an exposed surface adapted to polish the substrate and at least partially exposes the conductive braid for forward biasing the polishing substrate. The conductive braid can be woven or non-woven. The non-conductive layer may be composed of an abrasive material, and in one embodiment, the exposed surface may be planar or raised.
在本发明的又一实施例中,用于处理衬底的抛光部件包括具有从其上延伸的研磨元件的导电部分。在本发明的另一实施例中,用于处理衬底的抛光部件包括具有从其上延伸的导电滚轴的导电部分。在一个实施例中,导电滚轴具有至少部分地被导电涂层覆盖的聚合物芯,所述导电涂层由软导电材料构成。In yet another embodiment of the present invention, a polishing member for processing a substrate includes an electrically conductive portion having abrasive elements extending therefrom. In another embodiment of the present invention, a polishing member for processing a substrate includes a conductive portion having a conductive roller extending therefrom. In one embodiment, the conductive roller has a polymer core at least partially covered by a conductive coating consisting of a soft conductive material.
在另一方案中,提供一种球体组件。在一个实施例中,球体组件包括外壳、球体、导电适配器和接触元件。外壳具有延伸到内部通道的第一端的环形底座。导电适配器耦合到外壳的第二端。接触元件电耦合适配器和球体,球体保持在底座和适配器之间的外壳中。In another aspect, a sphere assembly is provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter, and a contact element. The housing has an annular base extending to a first end of the internal passage. A conductive adapter is coupled to the second end of the housing. The contact element electrically couples the adapter and the ball, and the ball is held in the housing between the base and the adapter.
附图说明Description of drawings
通过下面参照附图中所示的实施例使实现本发明的上述方案的方式和细节以及更具体的说明和简要概述更明显。The manner and details of carrying out the above-mentioned aspects of the present invention, together with a more specific description and a brief summary, will be made apparent below by referring to the embodiments shown in the accompanying drawings.
然而,应该注意的是,附图只表示本发明的典型实施例,因此附图不限制本发明的范围,本发明应该可以允许其它等效的实施例。It is to be noted, however, that the appended drawings represent only typical embodiments of this invention and are therefore not limiting of its scope, for the invention may admit to other equally effective embodiments.
图1是表示本发明的处理设备的一个实施例的平面图;Fig. 1 is a plan view showing one embodiment of the processing apparatus of the present invention;
图2是ECMP操作台的一个实施例的剖面图;Figure 2 is a cross-sectional view of an embodiment of an ECMP console;
图3是抛光部件的一个实施例的部分剖面图;Figure 3 is a partial cross-sectional view of one embodiment of a polishing component;
图4是凹槽状抛光部件的一个实施例的顶部平面图;Figure 4 is a top plan view of one embodiment of a fluted polishing member;
图5—6是凹槽状抛光部件的实施例的顶部平面图;5-6 are top plan views of embodiments of grooved polishing elements;
图7A是这里所述的导电布或编织物的顶部图;Figure 7A is a top view of the conductive cloth or braid described herein;
图7B和7C是具有包括导电布或编织物的抛光表面的抛光部件的部分剖面图;7B and 7C are partial cross-sectional views of a polishing member having a polishing surface comprising a conductive cloth or braid;
图7D是包括金属箔的抛光部件的部分剖面图;Figure 7D is a partial cross-sectional view of a polishing component including a metal foil;
图7E是包括编织材料的抛光部件的另一实施例;Figure 7E is another embodiment of a polishing component comprising a braided material;
图7F是具有形成在其中的窗口的抛光部件的另一实施例;Figure 7F is another embodiment of a polishing component having a window formed therein;
图8A和8B分别是具有导电元件的抛光部件的一个实施例的顶部示意图和剖面示意图;8A and 8B are top schematic and cross-sectional schematic views, respectively, of one embodiment of a polishing component having conductive elements;
图8C和8D分别是具有导电元件的抛光部件的一个实施例的顶部示意图和剖面图;8C and 8D are top schematic and cross-sectional views, respectively, of one embodiment of a polishing component having conductive elements;
图9A和9B是具有导电元件的抛光部件的其它实施例的透视图;9A and 9B are perspective views of other embodiments of polishing components having conductive elements;
图10A是抛光部件的另一实施例的部分透视图;Figure 10A is a partial perspective view of another embodiment of a polishing component;
图10B是抛光部件的另一实施例的部分透视图;Figure 10B is a partial perspective view of another embodiment of a polishing component;
图10C是抛光部件的另一实施例的部分透视图;Figure 10C is a partial perspective view of another embodiment of a polishing component;
图10D是抛光部件的另一实施例的部分透视图;Figure 10D is a partial perspective view of another embodiment of a polishing component;
图10E是抛光部件的另一实施例的部分透视图;Figure 10E is a partial perspective view of another embodiment of a polishing component;
图11A-11C是这里所述的抛光部件的衬底接触实施例的一个实施例的侧视图;11A-11C are side views of one embodiment of a substrate contacting embodiment of a polishing member described herein;
图12A-12D是具有连接到电源的伸出部的抛光部件的实施例的顶部示意图和侧视图;12A-12D are top schematic and side views of an embodiment of a polishing member having an extension connected to a power source;
图12E和12F表示给抛光部件提供电源的另一实施例的侧视图和放大透视图;Figures 12E and 12F show side and enlarged perspective views of another embodiment for providing power to a polishing component;
图14A-B是导电部件的另一实施例的顶视图和剖面图;14A-B are top and cross-sectional views of another embodiment of a conductive member;
图15A-D是导电部件的替换实施例的顶视图和剖面图;15A-D are top and cross-sectional views of alternative embodiments of conductive components;
图16—18是导电部件的的替换实施例的剖视图;16-18 are cross-sectional views of alternative embodiments of conductive components;
图19是具有球体组件的一个实施例的导电部件的另一实施例的剖视图;Figure 19 is a cross-sectional view of another embodiment of a conductive member with one embodiment of a ball assembly;
图20A-B是图19的球体组件的侧视图和放大图;20A-B are side views and enlarged views of the ball assembly of FIG. 19;
图21是图19和20A-B的球体组件的接触元件的一个实施例;和Figure 21 is an embodiment of a contact element of the ball assembly of Figures 19 and 20A-B; and
图22—24是具有球体组件的另一实施例的导电部件的另一实施例的透视图和剖面图。22-24 are perspective and cross-sectional views of another embodiment of a conductive member with another embodiment of a ball assembly.
为便于理解,在所有附图中尽可能地使用相同的参考标记表示相同的部件。To facilitate understanding, wherever possible, the same reference numbers will be used to refer to the same parts throughout the drawings.
具体实施方式Detailed ways
除非另外定义,这里使用的词语和短语应该提供它们在本技术领域中由本领域普通技术人员能理解的原始的和常规的含义。化学机械抛光应该指广义含义并包括(但不限于)通过化学作用、机械作用或化学和机械作用两种作用的组合研磨衬底。电抛光应该之广义含义并包括(但不限于)通过施加电化学作用如通过阳极溶解施加使衬底平面化。Unless otherwise defined, the words and phrases used herein should be given their original and conventional meanings as understood by those of ordinary skill in the art in the art. Chemical mechanical polishing shall be taken in a broad sense and include, but not limited to, grinding a substrate by chemical action, mechanical action, or a combination of both. Electropolishing shall have a broad meaning and include, but is not limited to, the planarization of a substrate by the application of electrochemical action, such as by anodic dissolution.
电化学机械抛光(ECMP)应该指广义含义并包括(但不限于)通过施加电化学作用、化学作用、机械作用或电化学、化学和机械用作的组合进行衬底的平面化,以便从衬底表面除去材料。Electrochemical Mechanical Polishing (ECMP) shall be broadly defined and include (but not limited to) the planarization of a substrate by applying electrochemical, chemical, mechanical, or a combination of electrochemical, chemical, and mechanical Material is removed from the bottom surface.
电化学机械镀覆工艺(ECMPP)应该指广义含义并包括(但不限于)在衬底上电化学地淀积材料并通过施加电化学作用、化学作用、机械作用和电化学用作、化学作用和机械作用的组合一般地平面化被淀积的材料。The Electrochemical Mechanical Plating process (ECMPP) shall refer to a broad sense and include (but not limited to) the electrochemical deposition of materials on a substrate and the application of electrochemical, chemical, mechanical, and electrochemical, chemical The combination of mechanical and mechanical action generally planarizes the deposited material.
阳极溶解应该指广义含义并包括(但不限制)直接或间接给衬底施加阳极偏压,结果从衬底表面除去导电材料并使该导电材料进入周围的电解液中。抛光表面广义地定义为在处理期间至少部分地与衬底表面接触或者通过接触直接地或通过导电介质间接地将制造部件电耦合到衬底表面的制造的部件的部分。Anodic dissolution shall be taken in a broad sense and include, but not limited to, the direct or indirect application of an anodic bias to the substrate, resulting in the removal of conductive material from the substrate surface and into the surrounding electrolyte. A polishing surface is broadly defined as that portion of a fabricated component that is at least partially in contact with a substrate surface during processing or that electrically couples a fabricated component to a substrate surface either directly through contact or indirectly through a conductive medium.
抛光装置Polishing device
图1表示处理设备100,该处理设备100具有适于电化学淀积和化学机械抛光的至少一个操作台,如电化学—机械抛光(ECMP)操作台102和设置在单个平台或工具上的至少一个常规抛光或磨光台106。可适用于本发明的一个抛光工具是可从Santa Clara,California的应用材料公司获得的MesaTM化学机械抛光器。FIG. 1 shows a
例如,在图1所示的设备100中,设备100包括两个ECMP102和一个抛光台106。这些操作台可用于处理衬底表面。例如,其中具有结构限制并用阻挡层填充、然后在阻挡层上设置导电材料的衬底可具有在两个ECMP操作台102中的两个步骤中除去的导电材料,其中阻挡层在抛光台106中被抛光以形成平面化表面。For example, in the
示意设备100一般包括支撑一个或多个ECMP操作台102、一个或多个抛嘎106、传送台110和圆盘传送带112的基座108。传送台110一般便于经过机械手116向设备100和从设备100传送衬底114。装载机械手116通常在传送台110和工厂接口装置120之间传送衬底114,其中工厂接口装置120可包括清洗组件122、计量装置104和一个或多个衬底储存盒118。计量装置104的一个例子是从Phoenix,Rrizona的Nova测量仪器公司获得的NovaScanTM整体厚度检测系统。The
或者,装载机械手116(或工厂接口装置120)可将衬底传送到一个或多个其它处理工具(未示出),如化学汽相淀积工具、物理汽相淀积工具、刻蚀工具等。Alternatively, the loading robot 116 (or factory interface device 120) may transfer the substrate to one or more other processing tools (not shown), such as chemical vapor deposition tools, physical vapor deposition tools, etch tools, etc. .
在一个实施例中,传送台110至少包括输入缓冲台124、输出缓冲台126、传送机械手132、和负载杯组件128。装载机械手116将衬底114放在输入缓冲台124上。传送机械手132具有两个夹子组件,每个夹子组件具有通过衬底边缘保持衬底的气动夹指。传送机械手132将衬底114从输入缓冲台124升高并旋转夹子和衬底114使衬底114定位在负载杯组件128上,然后将衬底114向下放到负载杯组件128上。In one embodiment, the
圆盘传送带112一般支撑多个抛光头130,在处理期间每个抛光头夹持一个衬底114。圆盘传送带112在传送台110、一个或多个ECMP操作台102和一个或多个抛光台106之间传送抛光头130。可适用于本发明的一个圆盘传送带112一般在授予Tolles等人并于1998年9月8日公布的美国专利US5804507中有介绍,这里引证其全部内容供参考。The
一般情况下,圆盘传送带112中心地设置在基座108上。圆盘传送带112通常包括多个臂138。每个臂138一般支撑抛光头之一130。图1中所述的臂138之一没有示出,以便可以看见传送台110。圆盘传送带112是可以指引的,以便抛光头130可在操作台102、106和传送台110之间按照用户限定的顺序移动。Generally, the
一般情况下,抛光头130保持衬底114,同时衬底114设置在ECMP操作台102或抛光台106中。ECMP操作台106和抛光台102在设备100上的设置允许通过在这些操作台之间移动衬底同时使衬底保持在同一抛光头130中而连续地镀覆或抛光衬底114。可适于本发明的一个抛光头是由Santa Clara,California的应用材料公司制造的TITANHEADTM衬底载体。In general, polishing
可与上述抛光设备100一起使用的抛光头130的实施例的例子在授予Zuniga等人的、在2001年2月6日公布的美国专利US6183354中有介绍,这里引证其全部内容供参考。An example of an embodiment of a polishing
为了便于控制抛光设备100和在其上进行的处理,控制器140连接到抛光设备100,该控制器140包括中心处理单元(CPU)142、储存器144和支持电路146。CPU142可以是可用在用于控制各种驱动器和压力的工业装配中的任何形式的计算机处理器之一。储存器144连接到CPU142。储存器144或计算机可读介质可以是一个或多个容易获得的储存器,如随机存取存储器(RAM)、只读存储器(ROM)、软盘、硬盘、或任何其他形式的数字存储器,局部的或远程的。支持电路146连接到CPU 142,用于以常规方式支持处理器。这些电路包括高速缓冲存储器、电源馈送装置、时钟电路、输入/输出电路、子系统等。To facilitate control of the
使抛光设备100和/或控制器140工作的功率有电源150提供。如所示,电源150连接到抛光设备100的多个部件,包括传送台110、工厂接口装置120、装载机械手116和控制器140。在另一个实施例中,为抛光设备100的两个或多个部件提供分开的电源。Power to operate polishing
图2示出了在ECMP操作台102上方支撑的抛光头130的剖面图。ECMP操作台102一般包括盆202、电极204、抛光部件205圆盘206和盖子208。在一个实施例中,盆202耦合到抛光设备100的基座108上。盆202一般限定容器或电解槽,其中可容纳导电流体,如电解液220。在处理衬底114时使用的电解液220可用于处理金属,如铜、铝、钨、金、银、或可以电化学地淀积在衬底114上或从衬底114上电化学地除去的任何其他材料。FIG. 2 shows a cross-sectional view of polishing
盆202可以是由塑料构成的碗形部件,如含氟聚合物、、PFA、PES、或可与电镀和电抛光化学性能兼容的其它材料。盆202具有包括孔216和排水口214的底部210。孔216一般设置在底部210的中心并允许传动轴212通过它。密封垫218设置在孔216和传动轴212之间并允许传动轴212旋转同时防止盆202中的液体通过孔216。
盆202通常包括电极204、圆盘206和设置在其中的抛光部件205。抛光部件205如抛光垫设置并被支撑在圆盘206上的盆202中。
电极204是与衬底114和/或与衬底表面接触的抛光部件205相对的对置电极。抛光部件205至少部分是导电的,并且在电化学处理如电化学机械镀覆处理(ECMPP)期间可与衬底组合用作电极,该ECMPP包括电化学淀积和化学机械抛光,或电化学溶解。电极204可以是阳极或阴极,这取决于施加于电极204和抛光部件205之间的正偏压(阳极)或负偏压(阴极)。
例如,在衬底表面淀积来自的电解液的材料,电极204用作阳极,衬底表面和/或抛光部件205用作阴极。当从衬底表面除去材料时,如通过施加电压而进行溶解,电极204用作阴极,衬底表面和/或抛光部件205可用作用于溶解处理的阳极。For example, material from an electrolyte solution is deposited on the substrate surface,
电极204一般设置在圆盘206和盆202的底部210之间,在那里电极204浸在电解液220中。电极204可以是板状部件、具有贯穿它形成的多个孔的板、或设置在可渗透膜片或容器中的多个电极件。可渗透膜片(未示出)可设置在源背叛206和电极204之间或电极204和抛光部件205之间,以便过滤气泡,如氢气泡,形成晶片表面并减少缺陷形成,稳定化或更均匀地在其间施加电流或功率。The
对于电淀积工艺,电极204由可淀积或除去的材料构成,如铜、铝、金、银、钨和可电化学地淀积在衬底114上的其它材料构成。对于电化学除去工艺,如阳极溶解,电极204可包括淀积材料以外的材料的非消耗电极,例如铂、碳、或铝,用于铜溶解。For electrodeposition processes,
抛光部件205可以是有与流体环境和处理指标相容的材料构成的垫、卷材、或带。在图2中所示实施例中,抛光部件205是圆形的并设置在盆202的上端,在其下表面由圆盘206支撑。抛光部件205包括导电材料的至少部分导电表面,如一个或多个导电元件,用于在处理期间接触衬底表面。抛光部件205可以是一部分或全部导电抛光材料或者埋置或设置在常规抛光材料中的导电抛光材料的组合部件。例如,导电材料可以设置在圆盘206和抛光部件205之间的“背衬”材料上,以便在处理期间适应抛光部件205的柔顺性和/或硬度计。The polishing
盆202、盖子208和圆盘206可以可移动地设置在基座108上。在圆盘传送带112指示衬底114在ECMP和抛光台102、106之间时,盆202、盖子208和圆盘206可以向着基座108轴向移动,以便除去抛光头130。圆盘206设置在盆202中并耦合到传动轴212上。传动轴212一般耦合到设置在基座108下面的电机224上。电机224响应来自控制器140的信号以预定速度旋转圆盘206。
圆盘206可以是由与电解液220相容的材料制成的被穿孔的部件支架。圆盘206可由聚合物制成,例如含氟聚合物、PE、、PFA、PES、HDPS、UHMW等。圆盘206可采用固定器如螺钉或其它装置如夹子或通过包封进行压配合而固定在盆202中,并且可以悬挂在其中等。圆盘206优选与电极204隔开,以便提供较宽的处理窗口,由此减小从衬底表面到电极204尺寸的淀积材料和除去材料的灵敏性。
圆盘206一般可渗透到电解液220中。在一个实施例中,圆盘206包括形成在其中的多个穿孔或沟道222。穿孔包括孔、孔洞、开口或者部分或完全通过物体图抛光部件的通道。可选择穿孔尺寸和密度以提供电解液220穿过圆盘206到衬底114的均匀分布。
在圆盘206的一个方案中,其包括具有约0.02英寸(0.5毫米)和约0.4英寸(10mm)之间的直径的穿孔。该穿孔可具有在抛光部件的约20%到约80%之间的穿孔密度。已经发现约50%的穿孔密度可提供具有对抛光工艺最小的不利影响的电解液流。通常,圆盘206和抛光部件205的穿孔对准以提供穿过圆盘206和抛光部件205并到衬底表面的足够的大量流动的电解液。抛光部件205可以通过机械夹具或导电粘接剂设置在圆盘206上。In one version of
这里所述的抛光部件是用于电化学机械抛光(ECMP)处理的,本发明可以在涉及电化学作用的其它制造工艺中采用导电抛光部件。采用电化学作用的这种工艺的例子包括电化学淀积和电化学机械镀覆工艺(ECMPP),其中电化学淀积包括用于给衬底表面施加均匀偏压的抛光部件205,用于在不使用常规偏压施加装置的情况下淀积导电材料,电化学机械镀覆工艺包括电化学淀积和化学机械抛光的结合。While the polishing components described herein are intended for use in electrochemical mechanical polishing (ECMP) processes, the present invention may employ conductive polishing components in other manufacturing processes involving electrochemical interactions. Examples of such processes using electrochemical action include electrochemical deposition and electrochemical mechanical plating processes (ECMPP), where electrochemical deposition includes a polishing
在工作中,抛光部件205设置在盆202中的电解液中的圆盘206上。抛光头上的衬底114设置在电解液中并与抛光部件205接触。电解液通过形成在其中的沟槽流过圆盘206和抛光部件205的穿孔并分布在衬底表面上。然后将来自电源的功率施加于导电抛光部件205和电极204,然后通过阳极溶解方法除去电解液中的导电材料如铜。In operation, polishing
电解液220从储液槽233经喷嘴270流到容积232。通过设置在裙部254中的多个孔234防止电解液220过流到容积232。孔234一般提供通过盖子208的路径,用于电解液220从容积232出去并流进盆202的下部。至少一部分孔234一般设置在凹陷258的下表面236和中心部分252之间。在孔234通常高于凹陷258的下表面236时,电解液220填满容积232并使衬底114和抛光部件205接触。这样,通过盖子208和圆盘206之间的相对间隔的全范围,衬底114保持与电解液220接触。
被收集在盆202中的电解液220一般流过设置在底部210的排放口214并进入流体输送系统272。流体输送系统272通常包括储液槽233和泵242。流进液体输送系统272的电解液220被收集在储液槽233中。泵242从储液槽233通过输送管道244到喷嘴270传送电解液220,在那里电解液220通过ECMP操作台102再循环。过滤器240一般设置在储液槽233和喷嘴270之间,以便可能存在于电解液220中的颗粒和团块材料。
电解液可以是商业上可得到的电解液。例如在含有可除去材料的铜中,电解液可包括硫酸基电解质或磷酸基电解液,如磷酸钾(K3PO4),或其组合。电解液还可含有硫酸基电解液的衍生物,如硫酸铜,和磷酸基电解液的衍生物,如磷酸铜。也可使用具有高氯酸—乙酸溶液及其衍生物的电解液。The electrolytic solution may be a commercially available electrolytic solution. For example in copper with removable material,the electrolyte may include a sulfuric acid based electrolyte or a phosphoric acid based electrolyte such as potassium phosphate (K3PO4 ), or a combination thereof. The electrolyte may also contain derivatives of sulfuric acid-based electrolytes, such as copper sulfate, and derivatives of phosphoric acid-based electrolytes, such as copper phosphate. Electrolytes with perchloric acid-acetic acid solutions and their derivatives can also be used.
另外,本发明可以采用在电镀或电抛光工艺中通常使用的电解液充分,包括常用的电镀或电抛光添加剂,如抛光剂。用于电化学处理如铜镀、铜阳极溶解或其组合的电解液的一个源是Shipley Leonel,adivision of Rohm和Haas,总部在Philadelphia,Pennsylvania,在Tradename Ultrafill 2000之下。合适的电解液成分在2002年1月3日申请的美国专利申请系列号10/038066中有介绍,这里引证其全部内容供参考。In addition, the present invention can fully utilize the electrolyte solution commonly used in the electroplating or electropolishing process, including commonly used electroplating or electropolishing additives, such as polishing agents. One source of electrolytes for electrochemical processes such as copper plating, copper anodic dissolution, or combinations thereof is Shipley Leonel, division of Rohm and Haas, headquartered in Philadelphia, Pennsylvania, under Tradename Ultrafill 2000. Suitable electrolyte compositions are described in US Patent Application Serial No. 10/038066, filed January 3, 2002, the entire contents of which are incorporated herein by reference.
电解液提供给电化学单元以在衬底表面上或在衬底表面和电极之间提供动态流速,流速高达约20加仑/分钟(GPM),如在约0.5GPM和约20GPM之间,例如在约2GPM。相信电解液的这种流速可以从衬底表面排除抛光材料和化学副产物,并允许更新电解液材料用于提高的抛光速度。The electrolyte solution is provided to the electrochemical cell to provide a dynamic flow rate on the substrate surface or between the substrate surface and the electrodes, the flow rate is up to about 20 gallons per minute (GPM), such as between about 0.5 GPM and about 20 GPM, for example at about 2GPM. It is believed that this flow rate of the electrolyte may remove polishing materials and chemical by-products from the substrate surface and allow for renewal of the electrolyte material for increased polishing rates.
当在抛光工艺中使用机械研磨时,衬底114和抛光部件205互相相对旋转,以便从衬底表面除去材料。机械研磨可通过与这里所述的导电抛光材料和常规抛光材料物理接触来提供。衬底114和抛光部件205分别以约5rpm或更高的速度如在约10rpm和约50rpm之间旋转。When mechanical grinding is used in the polishing process, the
在一个实施例中,可采用高旋转速度抛光工艺。高旋转速度工艺包括以约150rpm或更高的速度如在约150rpm和约750rpm之间旋转抛光部件205;和衬底114可以以约150rpm和约500rpm之间的旋转速度,例如约300rpm和约500rpm之间的旋转速度旋转。可与这里所述的抛光部件、处理和设备一起使用的高旋转速度抛光工艺的进一步说明在2001年7月25日申请的、发明名称为“用于半导体衬底的化学机械抛光的方法和设备”的美国专利申请系列号60/308030中公开了。在处理期间还可以进行其它运动,包括轨道运动基片和贯穿衬底表面的全面运动。In one embodiment, a high spin speed polishing process may be employed. The high spin speed process includes spinning the
当接触衬底表面时,约6psi或更低的压力,如约2psi或更低的压力施加于抛光部件205和衬底表面之间。如果包含低介电常数材料的衬底被抛光,在抛光衬底期间对着抛光部件205采用约2psi或更低的压力,如约0.5psi或更低的压力压在衬底114上。在一个方案中,约0.1psi和约0.2psi之间的压力可用于利用这里所述的导电抛光五品抛光衬底。When in contact with the substrate surface, a pressure of about 6 psi or less, such as about 2 psi or less, is applied between the polishing
在阳极溶解中,电位差或偏压施加于作为阴极的电极204和作为阳极的抛光部件205的抛光表面310(见图3)之间。在偏压施加于导电部件支撑件的同时,与抛光部件接触的衬底经导电抛光表面310被平面化。偏压的施加允许将形成在衬底表面上的导电材料,如含铜材料除去。建立偏压可以包括给衬底表面施加约15V或更低的电压。在约0.1V和约10V之间的电压可用于从衬底表面溶解掉含铜材料,并使其进入电解液。该偏压还可以产生在约0.1毫安/cm2和约50毫安/cm2之间、或对于200mm衬底的约0.1-20毫安的电流密度。In anodic dissolution, a potential difference or bias is applied between the
由电源150提供以便建立电位差和进行阳极溶解处理的信号可以根据用于从衬底表面除去材料的要求而改变。例如,时间变化阳极信号可提供给导电抛光媒质205。该信号还可以通过电脉冲调制技术施加。电脉冲修正技术包括在第一时间周期内在衬底上施加恒定电流密度或电压,然后在第二时间周期内在衬底上施加恒定反向电压或停止施加电压,以及重复第一和第二步骤。例如,电脉冲修正技术可采用从约—0.1V和约—15V之间到约0.1V和约15V之间变化的电压。The signal provided by the
与常规边缘接触针偏压的较高边缘除去速度和较低中心除去速度相比,利用抛光部件上的正确穿孔图形和密度,相信从抛光部件205偏置衬底使导电材料如金属从衬底表面均匀溶解到电解液中。With the correct perforation pattern and density on the polishing member, it is believed that biasing the substrate from the polishing
可以以约15000埃/分钟或更低,如约100埃/分钟和约15000埃/分钟之间的速度从至少一部分衬底表面除去导电材料如含铜材料。在本发明的一个实施例中,其中待除去的铜材料约为12000埃厚,电压可以施加于导电抛光部件205上,以便提供在约100埃/分钟和约8000埃/分钟之间的除去速度。Conductive material, such as copper-containing material, may be removed from at least a portion of the substrate surface at a rate of about 15,000 Angstroms/minute or less, such as between about 100 Angstroms/minute and about 15,000 Angstroms/minute. In one embodiment of the invention, wherein the copper material to be removed is approximately 12,000 Angstroms thick, a voltage may be applied to conductive polishing
在电抛光处理之后,衬底可以进一步被抛光或磨光以除去阻挡层材料,从介电材料除去表面缺陷,或提高采用导电抛光部件的抛光工艺的平面性。合适的抛光工艺和成分的例子在2000年3月11日申请的共同未审美国专利申请系列号09/569968中公开了,这里引证其全部内容供参考。Following the electropolishing process, the substrate may be further polished or buffed to remove barrier material, remove surface defects from dielectric materials, or improve planarity of the polishing process using conductive polishing components. Examples of suitable polishing processes and compositions are disclosed in co-pending US Patent Application Serial No. 09/569,968, filed March 11, 2000, the entire contents of which are incorporated herein by reference.
抛光部件材料Polished part material
这里所述的抛光部件可由导电材料形成,可包括导电抛光材料或可包括设置在介电或导电抛光材料中的导电元件。在一个实施例中,导电抛光材料可包括导电纤维,导电填充物,或其组合。导电纤维、导电填充物或其组合可以分散在聚合物材料中。The polishing components described herein can be formed from a conductive material, can include a conductive polishing material, or can include a conductive element disposed in a dielectric or conductive polishing material. In one embodiment, the conductive polishing material may include conductive fibers, conductive fillers, or combinations thereof. Conductive fibers, conductive fillers, or combinations thereof may be dispersed in the polymeric material.
导电纤维可把扩导电或介质材料,如介质或导电聚合物或碳基材料,它们至少部分地用包括金属、碳基材料、导电陶瓷材料导电合金或其组合的导电材料涂敷或覆盖。导电纤维可以是纤维或灯丝、导电编织物或布、一个或多个环路、线圈、或导电纤维环的形式的。多层导电材料,例如多层导电布或编织物可用于形成导电抛光材料。The conductive fibers may be conductive conductive or dielectric materials, such as dielectric or conductive polymers or carbon-based materials, which are at least partially coated or covered with conductive materials including metals, carbon-based materials, conductive ceramic materials, conductive alloys, or combinations thereof. The conductive fiber may be in the form of a fiber or filament, a conductive braid or cloth, one or more loops, coils, or loops of conductive fiber. Multiple layers of conductive material, such as multiple layers of conductive cloth or braid, may be used to form the conductive polishing material.
导电纤维包括用导电材料涂敷的介质或导电纤维材料。介质聚合物材料可用作纤维材料。合适的介质纤维材料的例子包括聚合物材料,如酰胺、聚酰亚胺、尼龙聚合物、聚氨基甲酸酯、聚酯、聚丙烯、聚乙烯、聚苯乙烯、聚碳酸酯,含二烯的聚合物,如AES(聚丙烯腈乙烯苯乙烯)、丙烯酸聚合物、或其组合。本发明还可以采用可用作这里所述的纤维的有机或无机材料。Conductive fibers include media or conductive fiber materials coated with a conductive material. A medium polymer material can be used as the fiber material. Examples of suitable media fiber materials include polymeric materials such as amides, polyimides, nylon polymers, polyurethanes, polyesters, polypropylenes, polyethylenes, polystyrenes, polycarbonates, diene-containing polymers such as AES (acrylonitrile ethylene styrene), acrylic polymers, or combinations thereof. The present invention can also employ organic or inorganic materials that can be used as the fibers described herein.
导电纤维材料可包括内导电聚合物材料,包括多炔、在商标名BaytronTM下可商业得到的聚乙烯二氧噻吩(PEDT)、聚苯胺、聚吡咯、聚噻吩、碳基纤维,或其组合。聚合物—贵金属杂化物材料一般与周围电解液是化学惰性的,如具有抗氧化的贵金属的那些材料。聚合物—贵金属杂化材料的例子是铂—聚合物杂化材料。导电抛光材料的例子,包括导电纤维,在申请日为2001年12月27日、发明名称为“用于电化学机械抛光的导电抛光部件”的共同未审美国专利申请系列号10/033732中有更全面的说明,这里引证其全部内容供参考。本发明还可以采用可用作这里所示的纤维的有机或无机材料。The conductive fiber material may comprise an internally conductive polymer material including polyacetylene, polyethylenedioxythiophene (PEDT) commercially available under the trade name Baytron™ , polyaniline, polypyrrole, polythiophene, carbon-based fibers, or combinations thereof . Polymer-noble metal hybrid materials are generally chemically inert to the surrounding electrolyte, such as those with oxidation-resistant noble metals. An example of a polymer-noble metal hybrid material is a platinum-polymer hybrid material. Examples of conductive polishing materials, including conductive fibers, are found in co-pending U.S. Patent Application Serial No. 10/033732, filed December 27, 2001, entitled "Conductive Polishing Elements for Electrochemical Mechanical Polishing" For a more comprehensive description, the entire contents of which are hereby incorporated by reference. The present invention can also employ organic or inorganic materials that can be used as the fibers shown here.
纤维材料可以是固态或中空的。纤维长度在约1μm和约1000mm之间,直径在约0.1μm和约1mm之间。在一个方案中,对于导电聚合物组合物和泡沫来说,如设置在聚胺甲酸酯中的导电纤维,纤维的直径在约5μm和约200μm之间,长度与直径的尺寸比为约5或以上,如约10或以上。纤维的横截面面积可以是圆形、椭圆形、星形、“雪片状”或被制造的介质或导电纤维的任何其它形状。长度在约5mm和约1000mm之间和直径为约5μm和约1000μm之间的高尺寸比纤维可用于形成导电纤维的网状物、环路编织物或布。该纤维还可具有在约104psi和约108psi之间的范围内的弹性模量。然而,本发明可以采用在这里所述的抛光部件和处理中提供柔顺的、弹性纤维所需要的任何弹性模量。Fibrous materials can be solid or hollow. The fibers are between about 1 μm and about 1000 mm in length and between about 0.1 μm and about 1 mm in diameter. In one aspect, for conductive polymer compositions and foams, such as conductive fibers disposed in polyurethane, the fibers have a diameter between about 5 μm and about 200 μm, and a length-to-diameter dimension ratio of about 5 or Above, such as about 10 or above. The cross-sectional area of the fibers may be circular, elliptical, star-shaped, "snowflake" or any other shape of the dielectric or conductive fiber being fabricated. High aspect ratio fibers having a length between about 5 mm and about 1000 mm and a diameter between about 5 μm and about 1000 μm can be used to form a mesh, loop braid or cloth of conductive fibers. The fibers may also have a modulus of elasticity in the range between about 104 psi and about 108 psi. However, any modulus of elasticity required to provide compliant, elastic fibers in the polishing components and treatments described herein can be employed with the present invention.
设置在导电或介质纤维材料上的导电材料一般包括导电无机化合物,如金属、金属合金、碳基材料、导电陶瓷材料、金属无机化合物、或其组合。可用于这里的导电材料涂层的金属的例子包括贵金属、锡、铅、铜、镍、钴、和其组合。贵金属包括金、铂、钯、铱、铼、铑、铼、钌、锇、和其组合,但优选金和铂。本发明还可以采用这里所述的材料以外的其它金属用于导电材料涂层。碳基材料包括碳黑、石墨、和能附着于纤维表面上的碳颗粒。陶瓷材料的例子包括碳化铌(NbC)、碳化锆(ZrC)、碳化钽(TaC)、碳化钛(TiC)、碳化钨(WC)和其组合。本发明还可以采用这里所述的材料以外的其它金属、其它碳基材料和其它陶瓷材料用于导电材料涂层。金属无机化合物例如包括设置在聚合物纤维上的硫化铜或danjenite,Cu9S5,如丙烯酸或尼龙纤维。Danjenite涂敷的纤维是在日本的Nihon Sanmo公司的商标名之下可得到的。纤维通常具有Danjenite涂层,即Cu9S5,并在约0.03μm和约0.1μm之间,并且已经观察到约40Ω/cm的导电性。该导电涂层可通过导电材料的镀覆、涂敷、物理汽相淀积、化学淀积、粘接、或键合直接设置在纤维上。此外,例如铜、或镍等导电材料的核化或籽晶层可以用于提高导电材料和纤维材料之间的粘接性。导电材料可设置在可变长度的单独的介质或导电纤维上,以及由介质或导电纤维材料制成的成形环路、泡沫和布或编织物上。Conductive materials disposed on conductive or dielectric fiber materials generally include conductive inorganic compounds, such as metals, metal alloys, carbon-based materials, conductive ceramic materials, metal inorganic compounds, or combinations thereof. Examples of metals useful in the conductive material coating herein include noble metals, tin, lead, copper, nickel, cobalt, and combinations thereof. Noble metals include gold, platinum, palladium, iridium, rhenium, rhodium, rhenium, ruthenium, osmium, and combinations thereof, but gold and platinum are preferred. The present invention may also employ metals other than those described herein for the conductive material coating. Carbon-based materials include carbon black, graphite, and carbon particles that can attach to the surface of fibers. Examples of ceramic materials include niobium carbide (NbC), zirconium carbide (ZrC), tantalum carbide (TaC), titanium carbide (TiC), tungsten carbide (WC), and combinations thereof. Other metals than those described herein, other carbon-based materials, and other ceramic materials can also be used for the conductive material coating in the present invention. Metal inorganic compounds include, for example, copper sulfide or danjenite, Cu9 S5 , disposed on polymer fibers, such as acrylic or nylon fibers. Danjenite coated fiber is a trade name of the Nihon Sanmo company in Japan available below. The fibers typically have a Danjenite coating, ie Cu9 S5 , and are between about 0.03 μm and about 0.1 μm, and a conductivity of about 40 Ω/cm has been observed. The conductive coating can be placed directly on the fiber by plating, coating, physical vapor deposition, chemical deposition, adhesive, or bonding of the conductive material. In addition, such as copper, A nucleation or seed layer of conductive material such as nickel or nickel can be used to improve the adhesion between the conductive material and the fiber material. The conductive material can be provided on individual dielectric or conductive fibers of variable length, as well as formed loops, foams and cloth or braids of dielectric or conductive fiber material.
合适的导电纤维的例子是用进涂覆的聚乙烯纤维。导电纤维的其它例子包括用金镀覆的丙烯酸纤维和用铑涂覆的尼龙纤维。采用核化材料的导电纤维的例子是用铜籽晶层涂覆并且在铜层上设置金层的尼龙纤维。An example of a suitable conductive fiber is coated polyethylene fiber. Other examples of conductive fibers include acrylic fibers plated with gold and nylon fibers coated with rhodium. An example of a conductive fiber using a nucleating material is a nylon fiber coated with a copper seed layer with a gold layer placed on the copper layer.
导电填充物可包括碳基材料或导电颗粒和纤维。导电碳基材料的例子包括碳粉末、碳纤维、碳纳米管、碳纳米泡沫、碳气凝胶、石墨和其组合。导电颗粒或纤维的例子包括固有导电聚合物、用导电材料涂敷的介质或导电颗粒、被涂覆在导电材料中的介质填充物、包括金属颗粒如金、铂、锡、铅和其它金属的导电无机颗粒或金属合金颗粒、导电陶瓷颗粒、和其组合。导电填充物可以用金属部分或全部涂覆,如贵金属、碳基材料、导电陶瓷材料、金属无机化合物、或其组合,如这里所述。填充物材料的例子是用铜或镍涂覆的碳纤维或石墨。导电填充物可以是球形、椭球形,具有一定尺寸比如2或以上的纵轴,或者制造填充物的任何其它形状。填充材料这里广义地定义为可设置在第二材料中的材料,以便改变第二材料的物理、化学、或电特性。这样,填充物材料还可包括部分或全部涂覆在这里所述的导电金属或导电聚合物中的介质或导电纤维材料。部分地或全部地被涂覆在导电金属或导电聚合物中的介质或导电纤维材料的填充物也可以是完全的纤维或纤维件。Conductive fillers may include carbon-based materials or conductive particles and fibers. Examples of conductive carbon-based materials include carbon powders, carbon fibers, carbon nanotubes, carbon nanofoams, carbon aerogels, graphite, and combinations thereof. Examples of conductive particles or fibers include inherently conductive polymers, dielectric or conductive particles coated with conductive materials, dielectric fillers coated in conductive materials, metal particles including metal particles such as gold, platinum, tin, lead, and other metals. Conductive inorganic particles or metal alloy particles, conductive ceramic particles, and combinations thereof. The conductive filler may be partially or fully coated with a metal, such as a noble metal, a carbon-based material, a conductive ceramic material, a metal-inorganic compound, or a combination thereof, as described herein. Examples of filler materials are carbon fibers or graphite coated with copper or nickel. The conductive filler can be spherical, ellipsoidal, have a longitudinal axis of a certain dimension such as 2 or more, or any other shape that makes the filler. A filler material is broadly defined herein as a material that can be disposed in a second material so as to alter the physical, chemical, or electrical properties of the second material. As such, the filler material may also include a dielectric or conductive fiber material partially or fully coated in a conductive metal or conductive polymer as described herein. The medium or the filling of conductive fiber material which is partially or completely coated in conductive metal or conductive polymer can also be a complete fiber or fiber piece.
导电材料用于涂覆介质和导电纤维和填充物,以便提供所希望水平的导电性,用于形成电镀抛光材料。一般情况下,导电材料的涂层设置在纤维和/或填充物材料上,其厚度为约0.01μm和约50μm之间,如在约0.02μm和约10μm之间。该涂层通常产生具有低于约100Ω—cm、如在约0.001Ω—cm和约32Ω—cm之间的电阻率的纤维或填充物。本发明还可以是这样的,即电阻率取决于纤维或填充物和所使用的涂层的材料,并且可展示导电材料涂层的电阻率,例如铂,其具有在0C的9.81μΩ—cm的电阻率。合适的导电纤维的例子包括用约0.1μm铜、镍或钴涂敷并在铜、镍或钴层上设置约2μm金的尼龙纤维,纤维的总直径在约30μm和约90μm之间。Conductive materials are used to coat the media and conductive fibers and fillers to provide the desired level of conductivity for forming electroplated polishing materials. Typically, a coating of conductive material is provided on the fibers and/or filler material with a thickness of between about 0.01 μm and about 50 μm, such as between about 0.02 μm and about 10 μm. The coating typically produces fibers or fillers having a resistivity below about 100 Ω-cm, such as between about 0.001 Ω-cm and about 32 Ω-cm. The invention can also be such that the resistivity depends on the fiber or filler and the material of the coating used, and can exhibit a resistivity of a coating of conductive material, such as platinum, which has a resistivity of 9.81 μΩ-cm at 0C. resistivity. Examples of suitable conductive fibers include nylon fibers coated with about 0.1 μm copper, nickel or cobalt with about 2 μm gold disposed on the copper, nickel or cobalt layer, the fibers having an overall diameter of between about 30 μm and about 90 μm.
电镀抛光材料可包括用附加导电材料和导电填充物至少部分地涂敷或覆盖的导电或介质纤维的组合,用于实现所希望的导电性或其它抛光部件性能。组合例子是金涂覆尼龙纤维和石墨用作包括至少一部分导电抛光材料的导电材料。Electroplated polishing materials may include combinations of conductive or dielectric fibers at least partially coated or covered with additional conductive materials and conductive fillers for achieving desired electrical conductivity or other polishing component properties. An example of a combination is gold-coated nylon fiber and graphite used as the conductive material including at least a portion of the conductive polishing material.
导电纤维材料、导电填充物材料或其组合可分散在粘接剂材料中或形成复合导电抛光材料。粘接剂材料的一种形式是常规抛光材料。常规抛光材料一般介质材料,如介质聚合物材料。介质聚合物抛光材料的例子包括聚氨基甲酸酯和混合了填充物的聚氨基甲酸酯、聚碳酸酯、聚苯撑硫(PPS)、TeflonTM聚合物、聚苯乙稀、乙稀—丙烯—二烯—亚甲基(EPDM)、或其组合,以及用在抛光衬底表面中的抛光材料。常规抛光材料还可包括浸在氨基甲酸酯中或处于泡沫状态的毛毡纤维。本发明还可以这样的,即常规抛光材料可以用作具有这里所述的导电纤维和填充物的粘接剂材料(还公知为基质)。The conductive fiber material, conductive filler material, or combinations thereof can be dispersed in the binder material or form a composite conductive polishing material. One form of binder material is conventional polishing material. Conventional polishing materials are generally dielectric materials, such as dielectric polymer materials. Examples of medium polymer polishing materials include polyurethane and filled polyurethane, polycarbonate, polyphenylene sulfide (PPS), TeflonTM polymer, polystyrene, vinyl— Propylene-diene-methylene (EPDM), or combinations thereof, and polishing materials for use in polishing substrate surfaces. Conventional polishing materials may also include felt fibers soaked in urethane or in foam. The invention is also contemplated that conventional polishing materials can be used as the binder material (also known as matrix) with the conductive fibers and fillers described herein.
可以给粘接剂材料添加添加剂,以便帮助导电纤维、导电填充物或其组合在聚合物材料中的分散。添加剂可用于提高由纤维和/或填充物和粘接剂材料形成的抛光材料的机械、热、和电性能。添加剂包括用于提高聚合物交联性能的交联剂和用于在粘接剂材料中更均匀地分散导电纤维或导电填充物的分散剂。交联剂的例子包括氨基化合物、硅烷交联剂、聚异腈酸酯化合物及其组合分散剂的例子包括N-取代长链链烯基琥珀酸亚胺、高分子量有机酸的胺盐、异丁烯酸的共聚物或含有极性基团的丙烯酸衍生物,如胺、酰胺、亚胺、酰亚胺、羟基、醚,含有极性基团的乙烯—丙烯共聚物,如胺、酰胺、亚胺、酰亚胺、羟基、醚。此外,含硫化合物,如巯基乙酸和相关的酯也可用作用于金涂覆纤维和填充物在粘接剂材料中的有效分散剂。本发明还预期添加剂的量和类型将改变,用于纤维或填充物材料以及使用的粘接剂材料,并且上述例子只是示意性的,并不限制本发明的范围。Additives may be added to the binder material to aid in the dispersion of the conductive fibers, conductive fillers or combinations thereof in the polymeric material. Additives can be used to enhance the mechanical, thermal, and electrical properties of polishing materials formed from fibers and/or filler and binder materials. The additives include a crosslinking agent for improving polymer crosslinking properties and a dispersant for more uniformly dispersing conductive fibers or conductive fillers in the adhesive material. Examples of cross-linking agents include amino compounds, silane cross-linking agents, polyisocyanate compounds, and combinations thereof Copolymers of acids or acrylic acid derivatives containing polar groups, such as amines, amides, imides, imides, hydroxyl groups, ethers, ethylene-propylene copolymers containing polar groups, such as amines, amides, imines , imide, hydroxyl, ether. In addition, sulfur-containing compounds such as thioglycolic acid and related esters can also be used as effective dispersants for gold-coated fibers and fillers in the binder material. The present invention also contemplates that the amount and type of additives will vary for the fiber or filler material as well as the binder material used, and the above examples are illustrative only and do not limit the scope of the invention.
此外,可以通过提供足量的导电纤维和/或导电填充物材料,在粘接剂材料中形成导电纤维和/或填充物材料的网状物,由此在粘接剂材料中形成物理连续或电连续媒质或相。当与聚合物粘接剂材料组合时,导电纤维和/或导电填充物一般包括抛光材料的约2wt%和约85wt%之间,如在约5wt%和约60wt%之间。In addition, a network of conductive fibers and/or filler material can be formed in the adhesive material by providing a sufficient amount of conductive fibers and/or conductive filler material, thereby forming a physical continuity or The electrical continuum or phase. When combined with a polymeric binder material, the conductive fibers and/or conductive fillers generally comprise between about 2% and about 85% by weight of the polishing material, such as between about 5% and about 60% by weight.
用导电材料和任选地导电填充物涂覆纤维材料的中间纺织编织物或布可设置在粘接剂中。用导电材料涂覆的纤维材料可以是中间纺织物以形成纱线。纱线可以在粘接剂或涂层的帮助下一起构成导电网。纱线可以设置为抛光垫材料中的导电元件,或者可以纺织成布或编织物。An intermediate textile weave or cloth of fibrous material coated with conductive material and optionally conductive fillers may be provided in the binder. The fibrous material coated with the conductive material may be an intermediate textile to form a yarn. The yarns can be combined to form a conductive mesh with the help of adhesives or coatings. The yarns may be provided as conductive elements in the polishing pad material, or may be woven into a cloth or braid.
或者,导电纤维和/或填充物可以与粘合剂组合形成复合导电抛光材料。合适的粘合剂的例子包括环氧树脂、硅酮、氨基甲酸酯、聚酰亚胺、酰胺、含氟聚合物、其氟化衍生物及其组合。另外的导电材料如导电聚合物、附加的导电填充物或其组合可以与粘合剂一起使用,用于实现所希望的导电性或其它抛光部件性能。导电纤维和/或填充物可包括复合导电抛光材料的在约2wt%和约85wt%之间,如在约5wt%和约60wt%之间的量。Alternatively, conductive fibers and/or fillers can be combined with a binder to form a composite conductive polishing material. Examples of suitable adhesives include epoxies, silicones, urethanes, polyimides, amides, fluoropolymers, fluorinated derivatives thereof, and combinations thereof. Additional conductive materials such as conductive polymers, additional conductive fillers, or combinations thereof may be used with the binder to achieve desired conductivity or other polishing member properties. The conductive fibers and/or fillers may comprise an amount between about 2 wt% and about 85 wt%, such as between about 5 wt% and about 60 wt%, of the composite conductive polishing material.
导电纤维和/或填充物可以用于形成导电抛光材料或具有体积或约50Ω-cm或以下、如约3Ω-cm或以下的表面电阻率的部件。在抛光部件的一个方案中,抛光部件或抛光部件的抛光表面具有约1Ω-cm或以下的电阻率。通常,提供导电抛光材料或导电抛光材料和常规抛光材料的组合物,以便制造具有约50Ω-cm或以下的体电阻率或体表面电阻率的导电抛光部件。导电抛光材料和常规抛光材料的组合物包括金或碳涂覆纤维,其呈现1Ω-cm或以下的电阻率并设置在足量的聚氨基甲酸酯的常规抛光材料中,以便提供具有约10Ω-cm或以下的体电阻率的抛光部件。Conductive fibers and/or fillers may be used to form a conductive polishing material or component having a volume or surface resistivity of about 50 Ω-cm or less, such as about 3 Ω-cm or less. In one aspect of the polishing member, the polishing member or the polishing surface of the polishing member has a resistivity of about 1 Ω-cm or less. Typically, a conductive polishing material or a combination of a conductive polishing material and a conventional polishing material is provided to produce a conductive polishing component having a bulk or bulk surface resistivity of about 50 Ω-cm or less. Compositions of conductive polishing material and conventional polishing material comprising gold or carbon coated fibers exhibiting a resistivity of 1 Ω-cm or less and disposed within the conventional polishing material of polyurethane in sufficient amount to provide a Polished parts with a volume resistivity of -cm or less.
由这里所述的导电纤维和/或填充物形成的导电抛光材料一般具有一定机械性能,使其在维持电场下不退化并抵抗酸性或碱性电解液。如果可施加的话,导电材料和使用的任何粘接剂材料组合以具有在常规抛光部件中使用的常规抛光材料的等效机械性能。例如,导电抛光材料,单独或与粘接材料组合,在用于聚合物材料的Shore D硬度计上具有约100或以下的硬度,该硬度计是由本部在Philadelphia,Pennsylvania的American Society for testing and materials(ASTM)所述的。在一个方案中,导电材料具有在用于聚合物材料的Shore D硬度计上的约80或以下的硬度。导电抛光部分310一般包括约500微米或以下的表面粗糙度。抛光垫的性能一般设计成在机械抛光期间和在给衬底表面时间偏压时可减少或最小化衬底表面的刮伤。Conductive polishing materials formed from the conductive fibers and/or fillers described herein generally have mechanical properties such that they do not degrade under a sustained electric field and are resistant to acidic or alkaline electrolytes. If applicable, the conductive material and any bond material used combine to have equivalent mechanical properties of conventional polishing materials used in conventional polishing components. For example, a conductive polishing material, alone or in combination with a bonding material, has a hardness of about 100 or less on the Shore D durometer for polymeric materials developed by the American Society for testing and materials (ASTM). In one aspect, the conductive material has a hardness of about 80 or less on a Shore D durometer for polymeric materials. The conductive
抛光部件结构Polished part structure
在一个方案中,抛光部件由设置在支架上的这里所述的单层导电抛光材料构成。在另一方案中,抛光部件可包括多个材料层,包括在衬底表面上的至少一种导电材料或提供用于与衬底接触的导电表面和至少一个部件支架或子垫。In one aspect, the polishing member is comprised of a single layer of conductive polishing material as described herein disposed on a support. In another aspect, the polishing component may comprise a plurality of material layers including at least one conductive material on the surface of the substrate or providing a conductive surface for contact with the substrate and at least one component holder or subpad.
图3是抛光部件205的一个实施例的部分剖面图。图3中所示的抛光部件205包括复合抛光部件,其具有用于抛光衬底表面的导电抛光部分310和部件支架,或子垫部分320。FIG. 3 is a partial cross-sectional view of one embodiment of a polishing
导电抛光部分310可包括导电抛光材料,其包括这里所述的导电纤维和/或导电填充物。例如,导电抛光部分310可包括导电材料,其包括分散在聚合物材料中的导电纤维和/或导电填充物。导电填充物可设置在聚合物粘接剂中。导电填充物可包括设置在聚合物粘接剂中的软导电材料。软导电材料一般具有低于或约等于铜的硬度和模量。软导电材料的例子包括金、锡、钯、钯-锡合金、铂和铅,在其它导电金属中,合金和陶瓷复合物比铜软。如果它们的尺寸足够小以便不会刮伤抛光衬底,本发明还期望采用比铜硬的其它导电填充物。此外,导电抛光部分可以包括一个或多个环路、线圈或导电纤维环,或者导电纤维中间纺织物以形成导电编织物或布。导电抛光部分310还可由多层导电材料构成,例如多层导电布或编织物。
导电抛光部分310的一个例子包括金涂覆尼龙纤维和设置在聚氨基甲酸酯中的石墨颗粒。另一例子包括设置在聚氨基甲酸酯或硅酮中的石墨颗粒和/或碳纤维。另一例子包括分散在聚氨基甲酸酯基质中的金或锡颗粒。An example of
在另一实施例中,导电抛光部分310可具有分散在其中的研磨剂颗粒360。至少部分研磨剂颗粒360暴露在导电抛光部分310的上抛光表面370上。研磨剂颗粒360一般构成为除去被抛光衬底的金属表面的钝化层,由此使下层金属暴露于电解液和电化学作用,由此提高了处理期间的抛光速度。研磨剂颗粒360的例子包括陶瓷、无机、有机、或聚合物颗粒,它们足够强以破坏形成在金属表面上的钝化层。聚合物颗粒可以是固态或海绵状的,以便适应抛光部分310的磨损速度。In another embodiment, conductive polishing
部件支撑部分320一般具有导电抛光部分310的相同或较小的直径或宽度。然而,部本发明还可以采用具有比导电抛光部分310大的宽度或直径的部件支撑部分320。图中示出了圆形导电抛光部分310和部件支撑部分320,本发明可以是这样的,即导电抛光部分310、部件支撑部分320或两者都可具有不同形状,如矩形表面或椭圆形表面。本发明还可以使导电抛光部分310、部件支撑部分320或两者都可形成线形材料卷材或带。
部件支撑部分320在抛光处理期间可包括惰性材料,并在ECMP期间抵抗消耗或损伤。例如,部件支撑部分可由常规抛光材料构成,包括聚合物材料,例如聚氨基甲酸酯和与填充物混合的聚氨基甲酸酯、聚碳酸酯、对聚苯硫(PPS)、乙烯—丙烯—二烯—亚甲基(EPMD)、TeflonTM聚合物、或其组合,以及在抛光衬底表面时适用的其它抛光材料。部件支撑部分可以是常规软材料,如用氨基甲酸酯浸渍的压缩毛毡纤维,用于在处理期间吸收施加在抛光部件205和载体头130之间的一些压力。该软材料可具有在约20和约90之间的Shore A硬度。The
或者,部件支撑部分320可以由与周围电解液相容的不会有害地影响抛光的导电材料构成,这些导电材料包括贵金属或导电聚合物,以便提供穿过抛光部件的导电性。贵金属的的例子包括金、铂、钯、铱、铼、铑、铼、钌、锇、和其组合,其中金和铂是优选的。如果这些材料与周围电解液由惰性材料如常规抛光材料或贵金属隔离,还可以采用与周围电解液反应的材料,如铜。Alternatively,
当部件支撑部分320是导电的时,部件支撑部分320可具有比导电抛光部分310高的导电性,即比其低的电阻率。例如,与包括铂的部件支撑部分320相比,其中铂具有在0℃的9.81Ω-cm的电阻率,导电抛光部分310可具有约1.0Ω-cm或以下的电阻率。导电部件支撑部分320可提供均匀偏压或电流,以便在衬底表面上的均匀阳极容解的抛光期间,使沿着部件的表面例如部件的半径的电阻最小化。导电部件支撑部分320可耦合到电源,用于给导电抛光部分310提供功率。When the
一般情况下,导电抛光部分310通过适于在抛光处理期间与抛光材料一起使用的常规粘合剂粘接到部件支撑部分320上。本发明还可以采用其它装置,将导电抛光部分310固定到部件支撑部分320上,如压缩模制和叠置。粘合剂可以是导电的或绝缘的,这取决于工艺要求或制造者的意愿。部件支撑部分320可通过粘合剂或机械夹子附着于支架上,如圆盘206。或者,如果抛光部件205只包括导电抛光部分310,导电抛光部分可通过粘合剂或机械夹子附着于支架上,如圆盘206。Generally, conductive polishing
导电抛光部分310和抛光部件205的部件支撑部分320一般可渗透到电解液中。可分别在导电抛光部分310和部件支撑部分320中形成多个穿孔,以便利于流体流过。在处理期间多个穿孔允许电解液流过并接触该表面。穿孔可以是在制造期间固有形成的,如在导电编织物或布中的编织物之间,或者可以通过由机械装置对材料进行形成和构图。穿孔可以部分或全部地穿过抛光部件205的每层。导电抛光部分310的穿孔和部件支撑部分320的穿孔可对准以便于流体流过。The
形成在抛光部件205中的穿孔350的例子可包括在抛光部件中直径为约0.02英寸(0.5毫米)和约0.4英寸(10mm)之间的孔。抛光部件205的厚度可以位于也0.1mm和约5mm之间。例如,穿孔可互相以约0.1英寸和约1英寸之间的距离隔开。Examples of
抛光部件205可具有在抛光材料的约20%和约80%之间的穿孔密度,以便提供足量的电解液流流过抛光部件表面。然而,本发明还可以使穿孔密度在这里所述的穿孔密度之上或之下,可用于控制流过的流体流量。在一个例子中,已经观察到约50%的穿孔密度以提供足够的电解液流量,以利于从衬底表面进行均匀阳极溶解。穿孔密度这里广义地定义为穿孔包括的抛光部件的体积。当穿孔形成在抛光部件205中时,穿孔密度包括抛光部件的表面或主体的穿孔聚集数量和直径或尺寸。The polishing
穿孔尺寸和密度选择成可以提供通过抛光部件205到衬底表面的电解液的均匀分布。一般情况下,导电抛光部分310和部件支撑部分320的穿孔尺寸、穿孔密度和穿孔团体可构成和相互对准,以便提供通过导电抛光部分310和部件支撑部分320到衬底表面的足量质流的电解液。The size and density of the perforations are selected to provide uniform distribution of the electrolyte through the polishing
沟槽可设置在抛光部件205中,以便促进电解液流过抛光部件205,由此提供用于阳极溶解或电镀工艺的有效的或均匀的流过衬底表面的电解液流量。该沟槽可以部分地形成在单层中或贯穿多层。本发明还可以使沟槽形成在与衬底表面接触的抛光表面的上层中。为了给抛光部件的表面提供增加的或控制的电解液流,一部分或多个穿孔可与沟槽互连。或者,所有的穿孔或没有穿孔与设置在抛光部件205中的沟槽互连。Grooves may be provided in the polishing
用于促进电解液流的沟槽的例子包括线形沟槽、弓形沟槽、环形沟槽、辐射状沟槽和螺旋形沟槽。形成在抛光部件205中的沟槽的横截面可为正方形、圆形、半圆形或可便于流体流过抛光部件表面的任何其它形状。沟槽可以互相相交。沟槽可以构成为图形,如设置在抛光表面上的相交X-Y图形,或形成在抛光表面上的相交三角形图形,或其组合,以便提高在衬底表面上的电解液流量。Examples of grooves for facilitating electrolyte flow include linear grooves, arcuate grooves, annular grooves, radial grooves, and helical grooves. The cross-section of the grooves formed in the polishing
沟槽可以互相隔开约30密耳和约300密耳之间的距离。通常,形成在抛光部件中的沟槽的宽度为约5密耳和约30密耳之间,但是尺寸可以按照抛光要求而改变。沟槽图形的例子包括约10密耳宽并互相隔开约60密耳的沟槽。任何合适的沟槽构形、尺寸、直径、横截面形状或间隔都可用于提供所希望的电解液流量。其它的横截面和沟槽结构在申请日为2001年10月11日、发明名称为“用于抛光衬底的方法和设备”的共同未审美国专利申请系列号60/328434中有更全面的说明,这里引证其全部内容供参考。The grooves may be spaced apart from each other by a distance of between about 30 mils and about 300 mils. Typically, the width of the grooves formed in the polishing member is between about 5 mils and about 30 mils, although the dimensions may vary according to the polishing requirements. An example groove pattern includes grooves about 10 mils wide and spaced about 60 mils apart. Any suitable groove configuration, size, diameter, cross-sectional shape or spacing can be used to provide the desired electrolyte flow. Other cross-sections and trench configurations are more fully described in copending U.S. Patent Application Serial No. 60/328,434, filed October 11, 2001, entitled "Method and Apparatus for Polishing a Substrate" instructions, the entire contents of which are hereby incorporated by reference.
可通过使一些穿孔与沟槽相交来增强输送到衬底表面的电解液,以便允许电解液进入并通过一组穿孔,并通过沟槽使其均匀分布在衬底表面周围,用于处理衬底,然后通过流过穿孔的附加电解液更新处理电解液。垫穿孔和沟槽的例子在申请日为2001年12月20日美国专利申请系列号10/026854中有更全面的说明,这里引证其全部内容供参考。Electrolyte delivery to the substrate surface can be enhanced by intersecting some of the perforations with trenches to allow the electrolyte to enter and pass through a set of perforations and distribute it evenly around the substrate surface through the trenches for processing the substrate , and then refresh the process electrolyte by additional electrolyte flowing through the perforations. Examples of pad perforations and grooves are more fully described in US Patent Application Serial No. 10/026854, filed December 20, 2001, the entire contents of which are incorporated herein by reference.
具有穿孔和沟槽的抛光部件的例子如下。图4是沟槽状抛光部件的一个实施例的顶部平面图。所示的抛光部件205的圆垫440具有足够尺寸和机制的多个穿孔446,以便允许电解液流到衬底表面。穿孔446可互相隔开约0.1英寸和约1英寸之间的距离。穿孔可以是圆形穿孔,其直径在约0.02英寸(0.5mm)和约0.4英寸(10mm)之间。此外,穿孔的数量和形状可以根据使用的设备、处理、参数、和ECMP部件而改变。Examples of polishing components having perforations and grooves are as follows. Figure 4 is a top plan view of one embodiment of a grooved polishing member. The illustrated
沟槽442形成在抛光部件205的抛光表面448中,以便帮助新鲜电解液从来自盆202的大量溶液流到衬底和抛光部件之间的间隙。沟槽442可具有各种图形,包括图4中所示的在抛光表面448上的基本上圆形同心沟槽的沟槽图形,图5中所示的X-Y图形和图6中所示的三角图形。
图5是具有设置在抛光垫540的抛光部分548上的X-Y图形的沟槽542的抛光垫的另一实施例的顶部平面图。穿孔546可设置在垂直和水平设置的沟槽的交叠部位,还可以设置在垂直沟槽、水平沟槽上,或设置在沟槽542外部的抛光部件548中。穿孔546和沟槽542设置在抛光部件的内直径544中,抛光垫540的外直径550中没有穿孔以及沟槽和穿孔。FIG. 5 is a top plan view of another embodiment of a polishing pad having an X-Y pattern of
图6是被构图的抛光部件640的另一实施例。在本例中,沟槽可设置成X-Y图形,对角设置的沟槽645与X-Y构图沟槽642相交。对角沟槽645可设置在距离X-Y沟槽642的任何的角度位置处,例如距离X-Y沟槽642的任何的约30和约60之间的角度处。穿孔646可沿着沟槽642和645的任何一个设置在X-Y沟槽642的交叉部位、X-Y沟槽642和对角沟槽645的交叉部位,或者设置在沟槽642和645外部的抛光部件648中。穿孔646和沟槽642设置在抛光部件的内直径中,抛光垫640的外直径可以没有穿孔和沟槽。FIG. 6 is another embodiment of a patterned polishing
沟槽图形的其它例子,如螺旋沟槽、盘旋形沟槽、和涡轮沟槽,在申请日为2001年10月11日、发明名称为“用于抛光衬底的方法和设备”的共同未审美国专利申请系列号60/328434中有更全面的说明,这里引证其全部内容供参考。Other examples of groove patterns, such as spiral grooves, spiral grooves, and turbine grooves, are filed on October 11, 2001, and the invention title is "Method and Apparatus for Polishing a Substrate". It is more fully described in co-pending US Patent Application Serial No. 60/328,434, the entire contents of which are incorporated herein by reference.
除了抛光部件205中的穿孔和沟槽之外,导电抛光部分310可以凸出以包括表面结构。凸起可改进电解液、被除去衬底材料、副产品和颗粒的传送。凸起还可以减少对抛光衬底的刮伤并修正抛光衬底和抛光部件205之间的摩擦。凸起的表面结构在导电抛光部分310上均匀分布。凸起的表面结构可包括如棱锥形、岛、沿着圆形、矩形和正方形状的十字形,以及其它几何形式的结构。本发明还可以采用在导电抛光部分310上凸起的其它组织结构。凸起的表面可覆盖导电抛光部分310的5—95%表面面积,如在导电抛光部分310的15%和90%表面面积之间。In addition to the perforations and grooves in polishing
导电抛光表面Conductive Polished Surface
图7A是导电布或编织物700的一个实施例的顶部剖面图,其可用于形成抛光部件205的导电抛光部分310。导电布或编织物由用这里所述的导电材料涂敷的中间纺织物纤维710构成。FIG. 7A is a top cross-sectional view of one embodiment of a conductive cloth or braid 700 that may be used to form
在一个实施例中,图7A中示出了在垂直部720和水平部730(图7A的平面所述)的中间纺织物纤维710的编织或篮筐—编织图形。本发明还可以采用编织物的其它形式,如沙线、或不同中间纺织物、片、或网状图形以形成导电布或编织物700。在一个方案中,纤维710是中间纺织物以在编织物700中提供通道740。通道740允许电解液或流体流过编织物700,包括离子和电解液成分。导电编织物700可设置在聚合物粘接剂中,如聚氨基甲酸酯。导电填充物还可设置在这种聚合物粘接剂中。In one embodiment, a weave or basket-weave pattern of the
图7B是设置在部件205的部件支撑部分320上的导电布或编织物700的部分剖面图。导电布或编织物700可作为一个或多个连续层设置在包括形成在部件支撑部分320中的任何穿孔350的部件支撑部分320上。布或编织物700可通过粘接剂固定到部件支撑部分320上。当浸在电解液中时,编织物700适于允许电解液流过纤维、沙线、或形成在布或编织物700中的通道。任选地,可在布或编织物700和部件支撑部分320之间包括中间层。该中间层是可渗透的或包括与用于流过部件205的电解液的穿孔350对准的穿孔。FIG. 7B is a partial cross-sectional view of a conductive cloth or braid 700 disposed on the
或者,如果通道740限定为不足以允许电解液有效地流过编织物700,即金属离子不能通过它扩散,编织物700还可被穿孔以增加流过它的电解液。编织物700通常适于允许电解液的流速高达约20加仑/分钟。Alternatively, the
图7C是可构图成具有穿孔750以匹配部件支撑部分320中的穿孔350的图形的布或编织物700的部分剖面图。或者,导电布或编织物700的部分或所有穿孔750可以不与部件支撑部分320的穿孔350对准。穿孔的对准或非对准允许操作者或制造者控制流过抛光部件以接触衬底表面的电解液的体积或流速。FIG. 7C is a partial cross-sectional view of a cloth or braid 700 that may be patterned with
编织物700的例子是约8和约10之间的纤维宽度的中间纺织物篮筐编织物,其中纤维包括用金涂敷的尼龙纤维。纤维的例子是尼龙纤维,设置在尼龙纤维上的约0.1μm的钴、铜或镍材料,以及设置在钴、铜或镍材料上的约2μm的金。An example of
或者,可使用导电网状物代替导电布或编织物700。导电网状物可包括设置在导电粘接剂中或用导电粘接剂涂覆的导电纤维、导电填充物、或至少一部分导电布700。导电粘接剂可包括非金属导电聚合物或设置聚合化合物中的导电材料的复合物。导电填充物的混合物,如石墨粉末、石墨片、石墨纤维、碳纤维、碳粉末、碳黑、用导电材料涂敷的金属颗粒或纤维、以及聚合物材料,如聚氨基甲酸酯,可以用于形成导电粘接剂。这里所述的用导电材料涂敷的纤维可用作用于导电粘接剂的导电填充物。例如,碳纤维或金涂覆尼龙纤维可用于形成导电粘接剂。Alternatively, a conductive mesh may be used instead of the conductive cloth or
如果需要的话,导电粘凝结剂还可包括添加剂,以便帮助导电填充物和/或纤维的分散,提高聚合物和填充物和/或纤维之间的粘接性,并提高导电箔和导电粘接剂之间的粘接性,以及提高导电粘接剂的机械、热和电性能。用于提高粘接性的添加剂的例子包括用于提高粘接性的环氧树脂、硅酮、氨基甲酸酯、聚酰亚胺或其组合。If desired, the conductive adhesive coagulant can also include additives to aid in the dispersion of conductive fillers and/or fibers, to improve the adhesion between the polymer and fillers and/or fibers, and to improve the conductive foil and conductive bonding. Adhesion between agents, and improve the mechanical, thermal and electrical properties of conductive adhesives. Examples of additives for improving adhesion include epoxy resins, silicones, urethanes, polyimides, or combinations thereof for improving adhesion.
导电填充物和/或纤维和聚合物材料的组合可适于提供特殊性能,如导电性、研磨性、耐久性因素。例如,包括约2wt%和约85wt%之间的导电填充物的导电粘接剂可与这里所述的部件和工艺一起使用。可用作导电填充物的材料的例子在申请日为2001年12月27日的美国专利申请系列号10/033732中有更全面的说明,这里引证其全部内容供参考。Combinations of conductive fillers and/or fibers and polymeric materials may be tailored to provide specific properties such as conductivity, abrasiveness, durability factors. For example, a conductive adhesive including between about 2 wt% and about 85 wt% conductive filler may be used with the components and processes described herein. Examples of materials that may be used as conductive fillers are more fully described in US Patent Application Serial No. 10/033732, filed December 27, 2001, the entire contents of which are incorporated herein by reference.
导电粘接剂可具有在约1微米和10毫米之间的厚度,如在约10微米和约1毫米之间的厚度。多层导电粘接剂可施加于导电网状物。导电网状物可以同样的方式用作导电布或编织物700,如图7B和7C所示。导电粘接剂可施加于导电网状物上的多层中。在一个方案中,在该网状物已经被穿孔以保护由穿孔工艺露出的部分网状物之后,导电粘接剂施加于导电网状物上。The conductive adhesive may have a thickness between about 1 micron and 10 mm, such as between about 10 microns and about 1 mm. Multiple layers of conductive adhesive can be applied to the conductive mesh. A conductive mesh can be used in the same manner as a conductive cloth or
另外,该导电首层可由与导电粘接剂纤维相类似的材料构成,其成分被修改以产生具有比导电粘接剂更高的中间材料粘接性的性能。合适的导电首层材料可具有低于约100Ω-cm的电阻率,如在0.001Ω-cm和约32Ω-cm之间。Alternatively, the conductive first layer may be constructed of a material similar to the conductive adhesive fibers, the composition of which has been modified to yield properties with higher adhesion to the intermediate material than the conductive adhesive. Suitable conductive first layer materials may have a resistivity below about 100 Ω-cm, such as between 0.001 Ω-cm and about 32 Ω-cm.
或者,可采用导电箔代替导电布或编织物700,如图7D所示。导电箔一般包括设置在支撑层320上的导电粘接剂790中或用其涂覆的金属箔780。形成金属箔的材料的例子包括金属涂覆编织物,导电金属,如铜、镍、和钴,以及贵金属,如金、铂、钯、铱、铼、铌、铼、钌、锇、锡、铅、和其组合,其中金、锡和铂是优选的。导电箔还可包括非金属导电薄板,如铜板、碳纤维纺织板箔。导电箔还可包括涂覆布或尼龙纤维的金属涂覆布或介质或导电材料,如铜、镍、锡和金。导电箔还可包括用这里所述的导电粘接剂材料涂覆的导电或介质材料的编织物。导电箔还可包括互连导电金属线或条如铜线的线框、丝网或网状物,它们可以用这里所述的导电粘结剂材料涂覆。在形成这里所述的金属箔时,本发明还可以采用其它材料。Alternatively, a conductive foil may be used instead of the conductive cloth or
这里所述的导电粘接剂790可密封金属箔780,这允许金属箔780可作为导电金属,已经观察到它与周围电解质如铜反应。导电箔可以穿有这里所述的多个穿孔。虽然未示出,导电箔可耦合到导电线以馈送电源,由此给抛光表面施加偏压。The conductive adhesive 790 described herein can seal the metal foil 780, which allows the metal foil 780 to act as a conductive metal, which has been observed to react with surrounding electrolytes such as copper. The conductive foil may be perforated with multiple perforations as described herein. Although not shown, a conductive foil may be coupled to a conductive wire to feed a power source, thereby biasing the polishing surface.
导电粘接剂790可如所述用于导电网状物,并且可以施加于金属箔780上的多层中。在一个方案中,在金属箔780被穿孔之后将导电粘接剂790施加于金属箔780,以便包括由穿孔工艺露出的部分金属薄780。Conductive adhesive 790 may be used as described for the conductive mesh and may be applied in multiple layers on metal foil 780 . In one aspect, the conductive adhesive 790 is applied to the metal foil 780 after the metal foil 780 is perforated so as to include the portion of the metal foil 780 exposed by the perforation process.
通过将液态粘合剂或粘接剂浇铸到编织物700、箔780或网状物上,可将这里所述的导电粘接剂设置在导电编织物700、箔780、或网状物上。其它合适的处理方法,包括注入模制、压缩模制、层叠、热压处理、挤压或其组合,也可用于密封导电编织物、网状物或箔。热塑性和热固性粘接剂可用于这种施加。The conductive adhesives described herein may be provided on the
可通过对金属箔进行穿孔形成多个穿孔,或者通过在金属箔和导电粘接剂之间施加导电首层来增强导电粘接剂和导电箔的金属箔成分之间的粘接性,其中穿孔具有在约0.1μm和约1mm之间的直径或宽度。导电首层可以是与用于这里所述的网状物的导电首层相同的材料。The adhesion between the conductive adhesive and the metal foil component of the conductive foil can be enhanced by perforating the metal foil to form multiple perforations, or by applying a conductive primer layer between the metal foil and the conductive adhesive, wherein the perforations have a diameter or width of between about 0.1 μm and about 1 mm. The conductive first layer may be the same material as the conductive first layer used for the meshes described herein.
图7E是可用于形成抛光部件205的导电抛光部分310的下层的导电布或编织物798的另一个实施例的剖面图。导电布或编织物可由中间纺织物或无纺纤维710构成。纤维710可由这里所述的导电材料形成或用该导电材料涂覆。无纺纤维的例子包括在其它无纺纤维中的旋转—键合或熔化多孔聚合物(spun-bond or melt blown polymers)。7E is a cross-sectional view of another embodiment of a conductive cloth or braid 798 that may be used to form the underlying layer of
导电抛光部分310包括由导电材料构成的上层794。上层794包括与下层792相对设置的抛光表面796。上层794可具有足够的厚度,以便整平下层792的不规则物,由此提供用于在处理期间与衬底接触的一般平坦和平面的抛光表面796。在一个实施例中,抛光表面796具有小于或等于约±1mm的厚度变化和低于或等于约500微米的表面粗糙度。
上层794可由任何导电材料构成。在一个实施例中,上层794由软材料形成,如金、锡、钯、钯—锡合金、铂、或铅,在其它导电金属当中,合金和陶瓷复合物比铜软。上层794任选地包括设置在其中的研磨材料,如上所述,以便帮助除去设置在被抛光衬底的金属表面上的钝化层。
或者,上层794可由非导电材料构成,该非导电材料基本上覆盖导电抛光部分310但留下露出的至少一部分导电抛光部分,以便导电抛光部分310可电耦合到正在上层794上被抛光的衬底上。在这种结构中,上层794可在抛光期间帮助减少刮伤和防止导电部分310进入任何暴露结构。非导电上层794可包括多个穿孔,允许导电抛光部分310保持露出。Alternatively,
图7F是具有形成在其中的窗口702的抛光部件205的另一个实施例。窗口702构成为允许设置在抛光部件205下面的传感器704检测表示抛光性能的量度。例如,传感器704可以是涡流传感器或干涉仪。在一个实施例中,该传感器是能产生准直光束的干涉仪,在处理期间该光束指向被抛光的衬底114的一侧并撞击衬底一侧。反射信号之间的干涉表示被抛光的材料层的厚度。可有利地利用的一种传感器在授予Birang等人的、在1999年4月13日申请的美国专利US5893796中有介绍。FIG. 7F is another embodiment of a polishing
窗口702包括充分地阻止处理液到达圆盘206容纳传感器704的区域的液体挡板706。通常选择对穿过其中的信号具有可传送性(如具有最小或无影响或干扰)的液体挡板706。液体挡板706可以为分离元件,如耦合于内置有窗口702的抛光部件205的聚氨基甲酸酯板、或为包括抛光部件205的一层或多层,例如,在导电部分310或部件支撑件或底垫部分320之下的一层聚酯薄膜。选择地,液体挡板706可以设置在设置于抛光部件205和圆盘206之间设置的层中,如电极204或其它层中。在另一选择性结构中,液体挡板706设置在与窗口702对准的通道708中,其中传感器704位于窗口702中。在导电部分310包含多层例如上层794和下层792的实施例中,透明材料700可以设置在包含导电部分310的至少一层中,如图7F中所示。可以预料到包括本文中描述的那些实施例的导电抛光部件的其它结构以及其它结构可以适用于包含窗口。The
抛光表面中的导电元件Conductive elements in polished surfaces
在另一方案中,本文中所述的导电纤维和填充物可以用于形成设置于抛光材料中的不同的导电元件来形成本发明的导电抛光部件205。抛光材料可以为常规的抛光材料或导电抛光材料,例如本文中描述的设置在聚合物中的导电填充物或纤维的导电混合物。导电元件的表面可以与抛光部件的表面形成一平面,或在抛光部件表面的平面上延伸。导电元件在抛光部件表面上延伸至5毫米。In another aspect, the conductive fibers and fillers described herein can be used to form different conductive elements disposed in the polishing material to form the conductive polishing
虽然下面示出了在抛光材料中具有特定结构和布置的导电元件的使用,本发明可以预料到单独的导电纤维和填充物以及由此制成的材料,如织物,也可以被考虑用作导电元件。此外虽然未示出,下述抛光部件的种类可以包括本文中描述的且示于图4-6中的具有穿孔和凹槽图形的抛光部件,构成该图形以便与下文中描述的导电元件相结合。Although the following shows the use of conductive elements having a specific structure and arrangement in the polishing material, the present invention contemplates that individual conductive fibers and fillers and materials made therefrom, such as fabrics, may also be considered as conductive element. Additionally, although not shown, the types of polishing components described below may include polishing components described herein and shown in FIGS. .
图8A-8B描述了具有导电元件设置于其中的抛光部件800的一个实施例的顶视和剖面示意图。抛光部件800一般包括具有适用于在处理期间接触衬底的抛光表面的主体810。主体810一般包括绝缘或聚合材料,如绝缘聚合物材料,例如聚氨基甲酸酯。8A-8B depict top and cross-sectional schematic views of one embodiment of a polishing
抛光表面820具有一个或多个形成与其中的开孔、凹槽、沟槽或凹陷830以至少部分地接收导电元件840。导电元件840一般被设置成与接触表面850共面或在由抛光表面820限定的平面上延伸。接触表面850一般由如具有顺从性的、弹性的、柔韧性的或压塑性的表面构成,以便在接触衬底时最小化导电元件840的电接触。在抛光期间,可以使用接触压来促进表面850与抛光表面820处于共面的位置。
主体810一般通过本文中所述的在其中形成的多个穿孔860来对电解液具有可渗透性,抛光部件800具有在抛光部件表面积810的20%至80%之间的穿孔密度,以便提供充足电解液流以从衬底表面制造均匀的阳极溶解。
主体810一般包括如本文中描述的常规抛光材料的绝缘材料。形成在主体810中的凹陷830一般构成为以在处理期间保持导电元件840,并可以在形状和取向上改变。在图8A描述的实施例中,凹陷830为设置在穿过抛光部件表面设置的具有矩形横截面的且在抛光部件800的中心形成互连的“X”或交叉图形870的凹槽。本发明预料到另外的横截面,如本文中描述的倒梯形和圆形弯曲,在那里凹槽接触衬底表面。
选择地,凹陷830(和设置在其中的导电元件840)可以以不规则间隔设置,可以沿径向、平行或垂直取向,且还可以为线性的、弯曲的、同心的、渐开曲线或其它横截面。Optionally, the recesses 830 (and the
图8C是在主体810内径向设置的单独导电元件840组的顶视图,每一元件840被隔离件875物理或电分离。隔离件875可以为绝缘抛光材料的部分或用于元件的绝缘互连,如塑料互连。选择地,隔离件875可以是没有抛光材料或导电元件840的抛光部件的部分以在导电元件840之间提供物理连接的断开。在这种分离元件的结构中,每一导电元件840可以通过导电路径890如布线被独立地连接到电源。FIG. 8C is a top view of a set of individual
参见图8A和8B,一般提供设置在主体810内的导电元件840以产生大约20Ω-cm或更小的体电阻率或体表面电阻率。在抛光部件的一个方案中,抛光部件具有大约2Ω-cm或更小的电阻率。导电元件840一般具有在稳定电场下不退化且在酸性或碱性电解液中抵抗退化的机械性能。导电元件840通过压配合、夹持、粘合或其它方法被保持在凹陷830中。Referring to Figures 8A and 8B, a
在一个实施例中,导电元件840具有充分地顺从性、弹性、或柔韧性以便在处理期间在接触表面和衬底之间保持电接触。用于导电元件840的具有充分顺从性、弹性或柔韧性的材料与抛光材料相比在Shore D硬度刻度上具有大约100或更少的相对硬度。顺从性材料,如,柔韧的或可弯曲的纤维材料,也可以用作导电元件840。导电材料可以比抛光材料更顺从以避免在抛光期间由导电部件840产生的较高的局部压强。In one embodiment, the
在图8A和8B中描述的实施例中,导电元件840嵌入在设置于部件支撑或底垫815上的抛光表面810中。在导电部件840的周围形成贯穿抛光表面810和部件支撑815的穿孔860。In the embodiment depicted in FIGS. 8A and 8B ,
一个导电元件840的实例包括用导电材料涂覆的绝缘或导电纤维或用聚合物材料混合的导电填充物,如基于粘附性的聚合物,以制成本文所述的导电(和耐抗的)混合物。导电元件840还可以包括本文中所述的导电聚合物材料或其它本文中所述的导电材料以改善电性能。例如,导电元件包括导电的环氧树脂和导电纤维以及碳或石墨填充物的复合物,导电纤维包括用金涂覆的尼龙纤维,例如用大约0.1μm的设置于尼龙纤维上的钴、铜或镍和用大约2μm设置在尼龙纤维上的金涂覆的尼龙纤维,以改善复合物的导电率,导电元件设置在聚氨基甲酸酯的主体中。An example of a
图8D是具有导电元件设置于其中的抛光部件800的另一实施例的剖面示意图。导电元件840一般被设置成与由抛光表面820限定的平面共面或在其上延伸的接触表面。导电元件840可以包括如本文所述的设置、密封或包覆在导电构件845周围的导电织物700。选择地,可以在导电构件845的周围设置、密封或包覆单独的导电纤维和/或填充物。导电构件845可以包括金属,如本文中所述的贵金属,或其它适用于在电解法抛光中使用的导电材料,如铜。导电元件840还可以包括本文中所述的织物和粘合材料的合成物,其中织物形成导电元件840的外部接触部分而粘合剂一般形成内部支撑结构。导电元件840还可以包括具有由本文中所述的严格导电织物700和粘合剂形成的管壁且具有矩形截面的空心管。8D is a schematic cross-sectional view of another embodiment of a polishing
利用连接器890将导电元件840耦合于电源(未示出)以在处理期间对导电元件840电偏置。连接器890一般为适宜于处理液或具有保护连接器890与处理液相隔离的覆层或涂层的布线、带或其它导体。连接器890可以通过塑模、焊接、堆叠、铜焊、夹持、卷曲、铆钉、拴扣、导电粘合或其它方法或器件耦合于导电元件840上。在连接器890中可以使用的材料的例子包括被绝缘的铜、石墨、钛、铂、金、铝、不锈钢和导电材料,以及其它材料。
设置在连接器890周围的涂层可以包括例如碳氟化和物、聚氯乙烯(PVC)和聚酰亚胺的聚合物。在图8A描述的实施例中,一个连接器890耦合于设置在抛光部件800周边的每一个导电元件840。选择地,连接器890可以贯穿抛光部件800的主体810设置。在另一个实施例中,连接器890可以耦合于设置凹处中和/或贯穿于电连接到导电元件840的主体810的导电带(未示出)。The coating disposed around the
图9A描述了抛光材料900的另一实施例。抛光材料900包括具有一个或多个至少部分设置于抛光表面906上的导电元件904的主体902。导电元件904一般包括顺从性的或弹性的且适用于在处理期间接触衬底表面的大量纤维、线和/或柔韧性指状物。纤维由至少部分导电的材料组成,如本文中所述的由导电材料涂覆的绝缘材料组成的纤维。纤维本质上可以为实心的或空心的以减小或增加纤维的顺从性或柔韧性的量。Another embodiment of a polishing
在图9A中描述的实施例中,导电元件904为多个耦合于基座909的导电子元件913。导电子元件913包括本文中所述的至少部分导电的纤维。子元件913的实例包括本文中所述的被金涂覆的尼龙纤维或碳纤维。基座909也包括导电材料且耦合于连接器990。基座909也可以被导电材料层涂覆,如铜,其在抛光期间从抛光垫物品中溶解出,其被认为延长导电纤维的处理持续时间。In the embodiment depicted in FIG. 9A ,
导电元件904一般设置在形成于抛光表面906中的凹陷908中。导电元件904可以相对于抛光表面906呈0和90度之间取向。在导电元件904垂直于抛光表面906取向的实施例中,导电元件904可以部分地设置于抛光表面906上。
凹陷908具有下衬垫部分910和上间隔部分912。构造衬垫部分912以接收导电元件904的基座909,并通过压配合、夹持、粘合或其它方法保持导电元件904。间隔部分912设置在凹陷908横断抛光表面906的地方。间隔部分912在横截面中一般大于衬垫部分以允许没有设置在衬底与抛光表面906之间的导电元件904在抛光期间接触衬底时弯曲。The
图9B描述具有导电表面940和多个形成于其上的分离的导电元件920的抛光部件900的另一实施例。导电元件920包括由导电材料涂覆绝缘材料的纤维,其在抛光部件205的导电表面940被垂直移置而在彼此之间被水平移置。抛光部件900的导电元件920一般相对于导电表面940在0至90度之间取向且可在相对于导电表面940的法线的任意极向倾斜。导电元件920可以穿过抛光垫的长度形成,如图9B中所示,或仅设置在抛光垫被选择的区域中。导电元件920在抛光表面上的接触高度可以高达5毫米。组成导电元件920的材料的直径在大约1密耳(千分之一英寸)和大约10密耳之间。抛光表面上的高度和导电元件920的直径可以根据要进行的抛光处理工艺来改变。9B depicts another embodiment of a polishing
导电元件920有充足的顺从性或弹性以在保持与衬底表面电接触的同时在接触压下形变从而对衬底表面具有减小的或最小的刮擦。在图9A和9B示出的实施例中,衬底表面仅与抛光部件205的导电元件920接触。放置导电元件920以便在抛光部件205的表面上提供均匀的电流密度。
由非导电或绝缘的粘合剂或粘合胶将导电元件920粘接到导电表面。非导电粘合剂可以在导电表面940提供绝缘涂层以在导电表面和所有周围的电解液之间提供电化学阻挡。导电表面940可以是抛光部件205的圆形抛光垫或线性网或带的形式。可以在导电表面940中设置一组穿孔(未示出)以便提供从其中穿过的电解液流。The
虽然未示出,可以在常规的抛光材料的支撑垫上设置导电板来用于对旋转或线性抛光压板上的抛光部件900定位和处理。Although not shown, a conductive plate may be provided on a conventional polishing material support pad for positioning and handling the polishing
图10A示出由导电元件1004组成的抛光部件1000的一个实施例的示意性透视图。每一导电元件1004一般包括具有设置在形成于抛光表面1024中的凹陷1012中的第一端1008和第二端1010的环或环形物1006。每一导电元件可以耦合于邻接的导电元件以形成多个在抛光表面1024延伸的环1006。FIG. 10A shows a schematic perspective view of one embodiment of a polishing
在图10A中示出的实施例中,每一环1006由被导电材料涂覆的纤维制成且通过接线基座1014被耦合粘接到凹陷1012。环1006的一个实例为被金涂覆的尼龙纤维。In the embodiment shown in FIG. 10A , each
环1006在抛光表面上的接触高度可以在大约0.5毫米和大约2毫米之间且组成环的材料的直径在大约1密耳(千分之一英寸)和大约50密耳之间。接线基座1014可以是导电材料,例如钛、铜、铂或被铜涂覆的铂。接线基座1014还可以被一层导电材料涂覆,如在抛光期间从抛光垫部件中溶解的铜。接线基座1014上的导电材料层使用被认为是作为牺牲层,其优先于下面的环1006材料或接线基座1014材料溶解以延长导电元件1004的寿命。导电元件1004可以相对于抛光表面1024在0至90度之间取向,且可以相对于抛光表面1024的法线在任意极向上倾斜。导电元件1004通过电连接器1030耦合于电源。The contact height of the
图10B示出由导电元件1004组成的抛光部件1000的另一实施例的示意性透视图。导电元件1004包括由如本文中所述的被导电材料涂覆的纤维组成的单个线圈1005。线圈1005耦合于设置在基座1014上的导电构件1007。线圈1005可以环绕导电构件1007、环绕基座1014或被粘覆于基座1014的表面。导电条可以包括导电材料,例如金,且其一般包括对抛光处理中使用的电解液呈化学惰性的导电材料,例如金或铂。选择地,牺牲材料层1009如铜设置在基座1014上。牺牲材料层1009一般为比导电构件1007较为化学活性的材料如铜,以便在抛光处理中的电抛光情况或阳极溶解情况期间比导电构件1007和线圈1005的材料优先去除。导电构件1007可以通过电连接器1030耦合于电源。FIG. 10B shows a schematic perspective view of another embodiment of a polishing
可以在导电元件和主体之间设置偏置构件以在抛光期间提供促使导电元件远离主体并与衬底表面接触的偏置。在图10B中示出了一个偏置构件1018的实例。然而,本发明预料到本文中示出的导电元件,例如在图8A-8D、9A、10A-10D中的实例,可以采用偏置构件。偏置构件可以为弹性材料,或包括压缩弹簧、片弹簧、卷簧、泡沫聚合物如泡沫聚氨基甲酸酯(例如聚合物)、弹性部件、球胆或其它构件的器件或能偏置导电元件的器件。偏置构件还可以是顺从性或弹性材料,如顺从性泡沫或通气软管,其能够将导电元件偏置并提高与将要被抛光的衬底表面的接触。偏置的导电元件可以与抛光部件的表面形成平面或在抛光部件的表面的平面上延伸。A biasing member may be provided between the conductive element and the body to provide a bias that urges the conductive element away from the body and into contact with the substrate surface during polishing. An example of a biasing
图10C示出具有多个从衬底的中心至边缘设置成放射图形的导电元件1004的抛光部件1000的另一实施例的示意性透视图。多个导电元件可以成15°、30°、45°、60°、和90°或其它任意所需结合的间隔彼此相分离。导电元件1004一般被间隔开以为衬底的抛光提供均匀的电流或电压的施加。导电元件可以被进一步隔开以便彼此不接触。主体1026的绝缘抛光材料的楔状部分1004可以构造成与导电元件1004电隔离。在抛光部件中还形成隔离件或凹陷区域1060以便将导电元件彼此隔离。导电元件1004可以是图10A中所示的环或图9B中示出的垂直延伸纤维的形式。10C shows a schematic perspective view of another embodiment of a
图10D示出图10A的导电元件1004的选择实施例的示意性透视图。导电元件1004包括如本文所述的具有插入在形成于抛光表面1024中的凹陷1012中的第一端1008和第二端1010的内织导电纤维1006的网或织物,以便形成用于接触衬底的连续导电表面。组成导电元件1004的网或织物在图10D中作为单个层示出。导电元件1004可以耦合于导电基座1014并从抛光表面1024上延伸,如图10A中所示。导电元件1004可以通过连接到导电基座1014的电连接器1030耦合于电源。Figure 10D shows a schematic perspective view of an alternative embodiment of the
图10E示出形成具有环1006形成于其中的导电元件1004且将导电元件固定到抛光部件的主体1026上的另一实施例的局部示意性透视图。在抛光部件的主体1024中形成通道1050,其贯穿用于导电元件1004的凹槽1070。在通道1050中设置插入件1055。插入件1055包括导电材料,例如金或与导电元件1006相同的材料。然后可以在通道1050中设置连接器1030且将其与插入件1055接触。连接器1030耦合于电源。导电元件1004的端1075可以与插入件1055接触以便于电流贯穿其中。然后将导电元件1004的端1075和连接器1030通过绝缘插入件1060固定到导电插入件1055。本发明预料到在沿着导电元件1004长度的间隔处或仅在导电元件1004的终端对导电元件1004的每一环1006使用通道。10E shows a partial schematic perspective view of another embodiment of forming a
图11A-C是示出本文中所述的导电材料的环或环形物的弹性性能的侧面示意图。抛光部件1100包括设置在形成于在其中具有凹槽或凹陷1140的垫支撑件1130上的底垫1120上的抛光表面1110。导电元件1142包括被导电材料涂覆的绝缘材料的环或环形物1150且其设置在凹陷1170中的接线基座1155上并与电接触1145相耦合。衬底1160与抛光部件1100相接触并关于抛光部件1100的表面作相对移动。当衬底接触导电元件1142时,环1150压入凹陷1140中同时保持与衬底1160的电接触,如图11B中所示。当衬底移动充足的距离以不再与导电元件1142相接触时,弹性环1150返回未受压的形状以用于另外的处理,如图11C中所示。11A-C are side schematic diagrams illustrating the elastic properties of a loop or annulus of conductive material described herein. The polishing
在2001年12月27日申请的美国临时专利申请序号10/033,732中描述的导电抛光垫的又一例子全部引入以作参考。Yet another example of a conductive polishing pad is described in US Provisional Patent Application Serial No. 10/033,732, filed December 27, 2001, which is incorporated by reference in its entirety.
电源应用power application
如上所述电源可以通过使用本文中所述的连接器或电源转移装置耦合于抛光部件205。在2001年12月27日申请的美国专利临时申请序号为10/033,732中更为详细地描述了电源转移装置,其被全部引入以作参考。A power source, as described above, may be coupled to the polishing
参考图11A-11C,可以通过使用包括设置于形成在抛光垫中的凹槽或凹陷1170中的导电板或衬垫的电接触1145将电源耦合于导电元件1140。在图11A中示出的实施例中,导电元件1140被安装到金属如金的板上,板安装在具有抛光部件1100的支撑件上,例如圆盘206,如图2中所示。选择地,电接触可以设置在位于导电元件和抛光垫材料之间的抛光垫材料上,例如,在导电元件840和主体810之间,如图8A和8B中所示。然后通过如上面在图8A-8D中所述的导线将电接触耦合于电源。Referring to FIGS. 11A-11C , power can be coupled to
图12A-12D是具有连接到电源(未示出)的延伸部分的抛光部件的实施例的顶视和侧视图。电源提供电流负载能力,即向衬底表面提供阳极偏压用于ECMP处理中的阳极溶解。可以通过设置在抛光部件的导电抛光部分和/或部件支撑部分的周围设置的一个或多个导电接触将电源连接到抛光部件上。可以通过一个或多个接触将一个或多个电源连接到抛光部件上以允许产生可变的偏压或穿过衬底表面部分的电流。选择地,可以在导电抛光部分和/或部件支撑部分中形成一个或多个导线,这些导线耦合于电源。12A-12D are top and side views of an embodiment of a polishing member having an extension connected to a power source (not shown). The power supply provides current carrying capacity, that is, provides anodic bias to the substrate surface for anodic dissolution in ECMP processing. A power source may be connected to the polishing member through one or more conductive contacts disposed about the conductive polishing portion and/or member support portion of the polishing member. One or more power sources may be connected to the polishing member via one or more contacts to allow generation of a variable bias voltage or current flow across portions of the substrate surface. Optionally, one or more leads may be formed in the conductive polish portion and/or the component support portion, the leads being coupled to a power source.
图12A是通过导电连接器耦合于电源的导电抛光垫的一个实施例的顶视平面图。导电抛光部分可以具有形成在比部件支撑部分1220具有较大宽度或直径的导电抛光部分1210中的延伸部分,例如,肩部或单独的插销。延伸部分通过连接器1225耦合于电源以向抛光部件205提供电流。在图12B中,可以平行与或从导电抛光部分1210的侧面延伸且延伸至超出抛光支撑部分1220的直径来形成延伸部分1215。图6中示出穿孔和凹槽的图形。12A is a top plan view of one embodiment of a conductive polishing pad coupled to a power source through a conductive connector. The conductive finish may have extensions, such as shoulders or separate pins, formed in the
图12B是通过导电路径1232如配线耦合于电源(未示出)的连接器1225的一个实施例的剖面示意图。连接器包括连接到导电路径1232且通过导电结合件1230如螺丝钉电耦合于延伸部分1215的导电抛光部分1210的电联接器1234。螺栓1238耦合于导电结合件1230,将导电抛光部分1210固定在它们之间。隔离件1236,如垫圈,可以设置在导电抛光部分1210与结合件1230和螺栓1238之间。隔离件1236可以包括导电材料。结合件1230、电联接器1234、隔离件1236和螺栓1238可以由导电材料例如金、铂、钛、铝或铜制成。如果使用与电解液反应的材料,如铜,则材料可以被与电解液成惰性反应的材料包覆,如铂。虽然未示出,导电结合件的选择性实施例可以包括导电的夹具、导电的粘合带或导电的粘合剂。12B is a schematic cross-sectional view of one embodiment of a
图12C是通过支撑件1260例如图2中所示的压板或圆盘206的上表面而耦合于电源(未示出)的连接器1225的一个实施例的剖面示意图。连接器1225包括一个结合件1240,如具有充足长度的螺丝或螺栓,以穿过延伸部分1215的导电抛光部分1210与支撑件1260相耦合。隔离件1242可以设置在导电抛光部分1210和结合件1240之间。12C is a schematic cross-sectional view of one embodiment of a
一般支撑件适用于接收结合件1240。可以在支撑件1260的表面中形成孔1246以接收结合件,如图12C中所示。选择地,电联接器可以设置在结合件1240和导电抛光部分1210之间,使结合件与支撑件1260相耦合。支撑件1260可以通过导电路径1232如配线连接到电源、在抛光压板或室的外部的电源或集成在抛光压板或室中的电源以提供与导电抛光部分1210的电连接。导电路径1232可以与支撑件1260集成在一起或从支撑件1260延伸,如图12B中所示。The general support is adapted to receive the
在另一实施例中,结合件1240可以集成到穿过导电抛光部分1215延伸的支撑件1260的延伸部分并通过螺栓1248被固定,如图12D所示。In another embodiment, the
图12E和12F示出向具有设置在抛光部分1280和部件支撑部分1290之间的电源联接器1285的抛光部件1270提供电源的另一实施例的侧视图和解析透视图。抛光部分1280可以由本文中所述的导电抛光材料制成或包括本文中所述的多个导电元件1275。如图12F中所示,导电元件1275可以彼此物理隔离。在抛光表面中形成的导电元件1275适用于电接触电源联接器1285,例如通过元件的导电基座。12E and 12F show side and exploded perspective views of another embodiment for providing power to a
电源联接器1285可以包括连接到一个或多个电源的布线互连元件1275、多个平行的布线互连元件1275、多个布线独立连接的元件1275或布线网互连元件连接元件1275。耦合于独立布线和元件的独立电源可以具有可变的施加电源而互连布线和元件可以向元件提供均匀的电源。电源联接器可以覆盖抛光部件的直径或宽度的部分或全部。图12F中的电源联接器1285为一个布线网互连元件连接元件1275的例子。电源联接器1285可以通过导电路径1287如布线连接到电源、抛光压板或室的外部的电源或集成在抛光压板或室中的电源。The
抛光表面中的研磨元件Abrasive elements in polishing surfaces
图14A-B是导电部件1400的另一实施例的顶视和剖面图。导电部件1400包括从导电部件1400的导电部分1404的抛光表面1402延伸的研磨装置。研磨装置可以为上面参考图3所述的研磨颗粒,或为如图14A-B中所示的分离的研磨元件1406。14A-B are top and cross-sectional views of another embodiment of a
在一个实施例中,研磨元件1406为接收在形成于导电部件1400的抛光表面1402中的相应狭缝1408中的条。研磨元件1406一般从抛光表面1402延伸并构造成以除去要被抛光的衬底的金属表面的钝化层,由此向电解液和电化学活性剂暴露下面的金属,并由此提高处理期间的抛光速率。研磨元件1406可以由足够强的陶瓷、无机、有机或聚合材料形成以破坏形成在金属表面的钝化层。一个例子为由设置在导电部件1400中的常规抛光垫如聚氨基甲酸酯垫制成的条或带。在图14A-B中示出的实施例中,研磨元件1406可以具有至少30 Shore D的硬度,或足够硬以摩擦将要抛光的材料的钝化层。在一个实施例中,研磨元件1406比铜硬。聚合物颗粒可以为固体或海面状以适应于研磨元件1406相对于周围导电部分1404的磨损率。In one embodiment,
研磨元件1406可以在抛光表面1402上构造成各种几何的或任意的结构。在一个实施例中,研磨元件1406在抛光表面1402上成放射状取向,然而,在其它取向中也考虑研磨元件1406的其它取向如螺旋、格子、平行和同心取向。
在一个实施例中,弹性构件1410可以设置在位于研磨元件1406和导电部分1404之间的各自狭缝1408中。弹性构件1410允许研磨元件1406相对于导电部分1404移动,由此提供对衬底增进的顺从性,以便在抛光期间更为均匀地去除钝化层。而且,可以选择弹性构件1410的顺从性来适应通过研磨元件1406和导电部分1404的抛光表面1402向衬底施加的相对压力,以便平衡钝化层的去除速率与钝化层的形成速率,以便要抛光的金属层被最小地暴露到研磨元件1406以最小化潜在的刮擦产生。In one embodiment,
从抛光表面延伸的导电球体Conductive spheres extending from polished surfaces
图15A-D是导电部件1500的选择实施例的顶视和剖面图。导电部件1500包括从导电部件1500的上部1504的抛光表面1502延伸的导电滚轴1506。滚轴1506在抛光期间通过衬底可以被向下推进到抛光表面1502的相同平面。嵌入在导电部件1500中的导电滚轴被耦合于处于高电压的外部电源以在处理期间对部件抛光衬底有高除去速率。15A-D are top and cross-sectional views of an alternative embodiment of a
导电滚轴1506可以相对于上部1504固定,或可以自由滚动。导电滚轴1506可以构造成球体、圆柱、钉、椭圆体或其它形状以便在处理期间不刮擦衬底。
在图15B中所述的实施例中,导电滚轴1506为设置在一个或多个导电载体1520中的多个球体。每个导电载体1520设置在形成于导电部件1500的抛光表面1502中的狭缝1508中。导电滚轴1506一般从抛光表面1502延伸并构造成以便提供与要抛光衬底的金属表面的电接触。导电滚轴1506可以由任意导电材料形成,或由至少部分被导电涂层1524涂覆的芯1522形成。在图15B描述的实施例中,导电滚轴1506具有至少部分被软导电材料1524涂覆的聚合物芯1522。一个实例为在TORLONTM和金层之间利用铜作为籽层来用导电金层涂覆的TORLONTM聚合物芯。另一个实例为被铜或其它导电材料层涂覆的TORLONTM或其它聚合物芯。其它软导电材料1524包括,但并不受限于,银、铜、锡等。In the embodiment depicted in FIG. 15B , the
在一个实施例中,聚合物芯1522可以从有弹性或弹力的材料中选择,如聚氨基甲酸酯,以便在抛光期间滚轴1506与衬底相接触时发生形变。可以用于芯1522的材料的一些例子包括弹性有机聚合物、三元乙丙橡胶(EDPM)、聚烯烃、多炔、聚酯、聚芳香烯烃/炔烃、聚酰亚胺、聚碳酸酯、聚氨基甲酸酯和其组合物。芯材料的其它例子包括无机聚合物例如硅氧烷,或有机和无机的混合材料,如多晶硅和聚硅烷。由于滚轴1506发生形变,在滚轴1506和衬底之间的接触面积增加,这样提高了滚轴1506和设置在衬底上的导电层之间的电流并由此改善抛光结果。In one embodiment, the
选择地,聚合物芯1522可以制成导电的以便于选择地用软导电材料1524制成芯1522的涂层。例如,聚合物芯1522可以用其它导电元素涂覆,如金属、导电碳或石墨、以及其它导电材料。Optionally, the
导电滚轴1506可以在抛光表面1502上设置成各种几何或任意结构。在一个实施例中,导电滚轴1506在抛光表面1502上呈放射状取向,然而,在其它取向中也预料到导电滚轴1506的其它取向如螺旋、格子、平行和同心取向。The
在图15B中描述的实施例中,弹性构件1510可以设置在位于导电载体1520和导电部分1504之间的各自狭缝1508中。弹性构件1510允许导电滚轴1506(和载体1520)相对于导电部分1504移动,由此对衬底提供增进的顺从性以便在抛光期间更为均匀的电接触。In the embodiment depicted in FIG. 15B , resilient members 1510 may be disposed in respective slots 1508 between conductive carrier 1520 and
在图15C中描述的实施例中,导电滚轴1506分别设置在多个电绝缘的外壳1530中,该外壳1530耦合于圆盘206。每一外壳可以通过焊接、粘合、堆叠或其它方法来耦合到圆盘206。在图7C中描述的实施例中,将外壳1530装入圆盘206中。In the embodiment depicted in FIG. 15C ,
外壳1530一般为空心圆柱,其允许滚轴1506垂直于圆盘206和抛光表面1502的平面垂直移动。外壳1530的上端包括锥形座1532,该锥形座阻止滚轴1506从外壳1530的上端脱离。座1532构成为允许在处理期间滚轴周边的至少一部分从外壳1532延伸出并接触衬底114。
接触装置1534构成为保持在滚轴1506和电源1536之间的电接触。接触装置1534可以为任意类型的导电构件,例如弹簧结构、压缩弹簧、导电轴承等,或其它允许在外壳1530内的滚轴1506的不同位置之间保持电连接的器件。接触装置1534设置在每一外壳1530的下端中。在一个实施例中,接触装置1534为片弹簧。可以利用接触装置1534将滚轴1506远离于圆盘206并相逆于座1532偏置。
选择地,从电解液源提供的电解液流经外壳1530并从座1532和滚轴1506之间流出外壳1530。流出外壳1530的电解液流将滚轴1506远离圆盘206偏置。Optionally, electrolyte supplied from an electrolyte source flows through
在又一实施例中,滚轴1056可以构造成具有小于电解液的特定重力以便当外壳1530至少被电解液部分填充时滚轴1506的浮力将滚轴1506远离圆盘206偏置。滚轴1506可以选择地为空心的以增加浮力并减小滚轴1506的惯性。在先引入的美国专利申请号No.10/211,626中描述了一个具有通过接触构件耦合于电源的滚轴的外壳,其可以适用受益本发明。In yet another embodiment, roller 1056 may be configured to have a specific gravity less than the electrolyte so that the buoyancy of
垫组件1540设置在圆盘206上。电组件1540包括多个第一开孔1542,该第一开孔构造成允许外壳1530至少部分从其中延伸。通常,外壳1530构成一高度以允许滚轴1506的周边部分延伸到垫组件1540之上以便在处理期间通过衬底114可以将滚轴1506设置在基本与垫组件1540的抛光表面1502齐平的位置。
在图15C中描述的实施例中,垫组件1540包括绝缘层1550、底垫1552和电极1554。绝缘层1550、底垫1552和电极1554可以耦合在一起作为可替换单元,例如通过压模、立桩、闩扣、粘合、键合或其它耦合方法。In the embodiment depicted in FIG. 15C ,
绝缘层1550可以类似于上述导电部分310。底垫1552可以相似于上述部件支撑部分320。电极可以相似于上述电极204。The insulating
第二组孔1544(在图FC中示出其中之一)可以至少贯穿绝缘层1550至少贯穿绝缘层1550和底垫1552形成以允许设置在垫组件1540上的电解液在电极1554和衬底114之间提供电流路径。选择地,孔1554可以延伸进或贯穿电极1554。可以在垫组件1540中形成窗口(未示出),如上面参考图7所述,以便于处理控制。A second set of holes 1544 (one of which is shown in FIG. FC ) can be formed through at least the insulating
在图15D中描述的实施例中,垫组件1560至少包括导电层1562、底垫1564和电极1554。导电层1562、底垫1564和电极1554可以耦合在一起作为可替换单元。垫组件1560可以包括构造成接受外壳1530的第一孔1570和允许设置在垫组件1560上的电解液在衬底114和电极1554之间建立电流路径的第二孔1572。如上所述,还可以在垫组件1560中形成窗口(未示出)。In the embodiment depicted in FIG. 15D ,
在一个实施例中,导电层1562和底垫1564可以相似于上述抛光部件205的导电层310和部件支撑部分320构造。选择地,垫组件1560可以包括导电背衬1566和设置于导电层1562和底垫1564之间的插入垫1568。导电背衬1566和插入垫1568可以相似与下述题目为“CONDUCTIVE ARTICLE WITH INTERPOSED PAD”中描述的导电背衬和插入垫构造。In one embodiment, conductive layer 1562 and
导电背衬1566一般通过开关1574耦合于电源1536。导电背衬1566将电压横穿导电层1562的背面均匀地分散以便在处理期间在导电层和衬底114之间横穿衬底114的直径配送均匀的电流。
在处理期间,开关1574设置在第一状态,其将滚轴1506电耦合于电源1536,而使导电背衬1566和电源1536之间开路。滚轴1506允许在衬底114和电极1554之间有相对高的电流,由此促进导电层从衬底上大块去除。一旦基本上去除导电层,开关1574设置到第二状态,其将导电背衬1566电耦合于电源1536,而使滚轴1506和电源1536之间开路。导电背衬1566提供横穿导电层1562宽度的均匀电势以促进从衬底上去除剩余的导电材料。因此,衬底的大块的和剩余的导电材料的去除可以在单个压板上进行而不需要从垫组件1540上提升衬底。其它可以适用于受益本发明的垫组件的实例将在下面参考图16-18描述。还预料到可以使用包括那些上面描述过的以及那些包含促进感知抛光性能的窗口的垫组件。During processing,
具有插入垫的导电部件Conductive parts with insert pads
图16是导电部件1600的另一实施例的剖面图。导电部件1600—般包括适用于在抛光期间接触衬底的导电部分1602、部件支撑部分1604和夹在导电部分1602和部件支撑部分1604之间的插入垫1606。导电部分1602和部件支撑部分1604可以构造成类似于本文中所述的任意实施例或它们的等同物。可以在插入带1606的每一侧面上提供粘合层1608以将插入垫1606耦合于部件支撑部分1604和导电部分1602。导电部分1602、部件支撑部分1604和插入垫1606可以通过选择性的方法被耦合,由此允许导电部件1600的元件易于在其有效寿命后作为单独的单元被替换,简化导电部件1600的替换、总量和正常状态的管理。FIG. 16 is a cross-sectional view of another embodiment of a
选择地,支撑部分1604可以耦合于电极204并可以用作为单个单元的导电部件1600替换。导电部件1600,选择地包括电极04,还可以包括贯穿其中形成的窗口,如参考图7F所示的和描述的。Optionally,
插入垫1606一般比部件支撑部分1604硬且与导电部分1602一样硬或比起更硬。本发明预料到插入垫1606可以选择地比导电部分1602软。插入垫1606的硬度可以选择地向导电部件1600提供硬度,这延长了导电部分1602和部件支撑部分1604的机械寿命同时改善导致增大被抛光的衬底的球形平面的导电部件1600的衰减特性。在一个实施例中,插入垫1606具有小于或等于大约80 Shore D的硬度,部件支撑部分1604具有小于或等于大约80 Shore A的硬度,而导电部分1602具有小于或等于100 Shore D的硬度。在另一实施例中,插入垫1606具有小于或等于大约35密耳的厚度,部件支撑部分1604具有小于或等于大约100密耳的厚度。
插入垫1606可以由绝缘材料制成,该材料允许贯穿包括导电部件1600的叠层板(即导电部分1602、插入垫1606和部件支撑部分1604的叠层)建立导电路径。当导电部件1600被浸入导电液体或由导电液体如电解液涂覆时,建立导电路径。为促进贯穿导电部件1600的电路径的建立,插入垫1606可以为浸透性的或多孔的至少一种以允许电解液从其中流过。
在一个实施例中,插入垫1606由适宜于电解液和电化学处理的绝缘材料制成。适合的材料包括聚合物,如聚氨基甲酸酯、聚酯、聚酯薄膜片、环氧树酯和聚碳酸酯,以及其它。In one embodiment, the
选择地,导电背衬1610可以设置在插入垫1606和导电部分1602之间。导电背衬1610一般使穿过导电部分1602的电势均匀,由此提高抛光的均匀性。具有穿过导电部分1602抛光表面的相同电势确保了导电部分1602和要抛光的导电材料之间的良好电接触,特别是如果导电材料为剩余的不再为连续膜的材料(即膜剩余的分离的岛)。而且,导电背衬1610为导电部分1602提供机械强度,由此增加导电部件1600的有效寿命。导电背衬1610的使用在穿过导电部分的电阻大于约500m-欧姆的实施例中非常有用且其提高了导电部分1602的机械完整性。还可以利用导电背衬1610来提高导电均匀性和降低导电部分1602的电阻。除其它适宜于抛光处理的合适的导电材料之外,导电背衬1610可以由金属薄片、金属屏蔽、金属涂覆的布或无纺布制成。在一个实施例中,导电背衬1610被压模到导电部分1602。构成背衬1610以不阻止在导电部分1604和插入垫1606之间的电解液流。导电部分1602可以通过压模、叠层、注模和其它适合的方法安装在导电背衬1610上。Optionally, a
图17是导电部件1700的另一实施例的剖面图。导电部件1700一般包括适用于在抛光期间接触衬底的导电部分1602、导电背衬1610、部件支撑部分1604和夹在导电部分1602和部件支撑部分1604之间的插入垫1706,导电部件1700具有与上述导电部件1600的相似结构。FIG. 17 is a cross-sectional view of another embodiment of a
在图17中描述的实施例中,插入垫1706由具有多个室1708的材料制成。室1708一般由孔其或其它流体填充,且其提供改善处理工艺的弹性和顺从性。室可以在0.1微米至几毫米的尺寸范围敞开或闭合,如1微米至1毫米。本发明预料到适于插入垫1706的其它尺寸。插入垫1706可以为浸透性或多孔中的至少一种以允许电解液从其中流过。In the embodiment depicted in FIG. 17 , insert pad 1706 is made of a material having a plurality of chambers 1708 . Chamber 1708 is typically filled with orifice or other fluid, and it provides flexibility and compliance to improve the processing process. The chambers may be open or closed in the size range of 0.1 micron to a few millimeters, such as 1 micron to 1 mm. Other dimensions suitable for insertion pad 1706 are contemplated by the present invention. Insert pad 1706 may be at least one of permeable or porous to allow electrolyte to flow therethrough.
插入垫1706可以由适宜于电解液和电化学处理的绝缘材料制成。合适的材料包括,但并不受限于,泡沫聚合物如泡沫聚氨基甲酸酯和聚酯薄膜片。插入垫1706一般具有比部件支撑部分或底垫1604小的压缩性且当其受压时具有更多的局部形变独立性。Insertion pad 1706 may be made of an insulating material suitable for electrolyte and electrochemical processing. Suitable materials include, but are not limited to, foamed polymers such as foamed polyurethane and mylar sheets. The insert pad 1706 is generally less compressible than the component support portion or
图18是导电部件1800的另一实施例的剖面图。导电部件1800包括耦合于部件支撑部分1804的导电部分1802。选择地,导电部件1800可以包括插入垫和设置于导电部分1802和部件支撑部分1804之间的导电背衬(二者都未示出)。FIG. 18 is a cross-sectional view of another embodiment of a
导电部件1800一般包括贯穿其中形成的多个孔1806以允许电解液或其它处理液在导电部分1802的上抛光表面1808和部件支撑部分1804的下衬垫表面1810之间经过。由每一孔1806插入上抛光表面1808限定的边1812可以被构廓成以减小可能在处理期间对衬底刮擦的任意形状的角、毛口或表面不规则。边1812的轮廓可以包括使边1812光滑且促进刮擦最小化的圆角(radius)、斜面、锥形或其它结构。
在导电部分1802至少部分由聚合物制成的实施例中,可以通过在聚合物完全硬化前形成孔1806来实现边1812的光滑。因此,在聚合物的剩余物硬化周期期间,边1812会因导电部分1802收缩而变成圆形的。In embodiments where conductive portion 1802 is at least partially made of a polymer, smoothing of
此外,或选择地,边1812可以通过在硬化期间或之后施加热或压力中的至少一种来弄圆。在一个实例中,边1812可以被磨光、加热或火焰处理来圆化在抛光表面和边1812处的孔1806之间的转变。Additionally, or alternatively, edges 1812 may be rounded by applying at least one of heat or pressure during or after hardening. In one example,
在另一实例中,聚合物导电部分1802可以由排斥压模或冲膜的可压模材料组成。聚合物导电部分1802的排斥属性引起表面张力,该表面张力引起被模压进聚合物导电部分1802的应力,该应力将材料从模具中脱离,由此导致在硬化期间孔1806的边1812圆化。In another example, the polymeric conductive portion 1802 can be composed of a stampable material that resists stamping or punching. The repulsive nature of the polymer conductive portion 1802 induces surface tension which causes stress molded into the polymer conductive portion 1802 which releases the material from the mold thereby causing the
在组装之前或之后贯穿导电部件1800形成孔1806。在一个实施例中,孔1806包括形成在导电部分1802中的第一孔1814和形成在部件支撑部分1804中的第二孔1816。在包括插入垫的实施例中,第二孔1816形成于其中。选择地,第一孔1814和第二孔1816的至少一部分可以形成在导电部分1802中。第一孔1814的直径比第二孔1816的直径大。在第一孔1814下的第二孔1816的较小直径向第一孔1814周围的导电部分1802提供侧支撑,由此改善在抛光期间到垫切力和扭矩的阻抗。因此,包括在表面1808的与其下的较小孔同心的较大孔的孔1806在最小化颗粒产生的同时导致导电部分1802的较小形变,因此最小化由垫损伤导致的衬底缺陷。
在所有层放置在一起之前或之后,导电部件中的孔可以通过机械方法打孔,如凸/凹打孔。在一个实施例中,被压模在导电背衬上的导电部分1802首先被安装在插入层上,导电部分1802与导电背衬和插入层被一起机械穿孔,部件支撑部分或底垫被分别进行机械穿孔,在穿孔后它们被一起对准。在另一实施例中,所有层放置在一起,然后穿孔。本发明预料到任意的穿孔技术和次序。The holes in the conductive parts can be punched by mechanical methods, such as convex/concave punching, before or after all the layers are put together. In one embodiment, the conductive portion 1802, which is compression molded onto a conductive backing, is first mounted on the interposer, the conductive portion 1802 is mechanically perforated along with the conductive backing and interposer, and the component support portion or base pad is perforated separately. Mechanically pierced, after piercing they are aligned together. In another embodiment, all layers are put together and then perforated. The present invention contemplates arbitrary perforation techniques and sequences.
图19是ECMP台1990的另一实施例的局部剖面图,而图20A-B是图19的ECMP台1990的球体组件1900的侧面和解析图。ECMP台1990包括支撑抛光垫组件1960的压板1950,在其上,保持在抛光头部130中的衬底114被处理。压板1950包括至少一个从其中突出并耦合于电源1972的球体组件1900,其适用于在处理期间偏置衬底114的表面。虽然在图19中示出两个球体组件,可以使用任意数目的球体组件,且可以将任意数目的球体组件相对于压板1950的中心线分散成任意数目的结构。19 is a partial cross-sectional view of another embodiment of an ECMP stage 1990, and FIGS. 20A-B are side and exploded views of the
抛光垫组件1960可以为适用于处理衬底的任意垫组件,其包括上述的任意实施例。抛光垫组件1960可以包括电极1962和抛光层1966。在一个实施例中,抛光垫组件1960的抛光层1966可以包括绝缘的抛光表面1964,如聚氨基甲酸酯垫。在另一实施例中,抛光垫组件1960的抛光层1966可以包括导电的抛光表面1964,例如其中具有导电颗粒分散在其中的聚合物基体或导电织物及其它。在抛光表面为导电的实施例中,抛光表面1964和电极1962可以通过开关1974耦合于电源1972(由虚线示出),该开关允许电源在球体组件1900和导电抛光表面1940之间选择切换,已分别在不从抛光垫组件1960提升衬底114的情况下促进从衬底114去除大块金属和去除剩余金属。Polishing pad assembly 1960 can be any pad assembly suitable for processing a substrate, including any of the embodiments described above. Polishing pad assembly 1960 can include electrode 1962 and polishing layer 1966 . In one embodiment, the polishing layer 1966 of the polishing pad assembly 1960 can include an insulating polishing surface 1964, such as a polyurethane pad. In another embodiment, the polishing layer 1966 of the polishing pad assembly 1960 can include a conductive polishing surface 1964, such as a polymer matrix having conductive particles dispersed therein or a conductive fabric, among others. In embodiments where the polishing surface is conductive, the polishing surface 1964 and electrode 1962 can be coupled to a power source 1972 (shown in phantom) via a
球体组件1900一般耦合于压板1950并至少部分穿过形成在抛光垫组件1960中的相应的孔1968延伸。每一球体组件1900包括空心外壳1902、适配器1904、球体1906、接触元件1914和夹具衬套1916。球体1906可移动地设置在外壳1902中,且其可以设置在具有延伸在抛光表面1964的球体1906的至少一部分的第一位置和当球体与抛光表面1964齐平的至少第二位置。球体1906一般适合于电偏置衬底114并可以如上述构造。
外壳1902由适宜于化学处理的绝缘材料制成。在一个实施例中,外壳1902由PEEK制成。外壳1902具有第一端1908和第二端1910。驱动装置1912形成在第一端1908中或其上以促进球体组件1900安装到压板1950。驱动装置1912可以是用于扳手的孔、一个狭缝或多个狭缝、凹陷的驱动装置(例如用于或六角形驱动等)或突出的驱动装置(如扳手平面或六角形头部等),以及其它。第一端1908还包括阻止球体1906从外壳1902的第一端1908穿出的座1926。
接触元件1914耦合于夹具衬套1916和适配器1904之间。接触元件1914一般构造成基本或完全穿过外壳1902内球体位置的范围电连接适配器1904和球体1906。接触元件1914可以如上述构造。
在图19-20A-B中以及图21中所描述的实施例中,接触元件1914包括具有多个从其中成极对称排列延伸的弯曲部1944的环形基座1942。弯曲部1944包括两个从基座1942延伸到末端2108的支撑元件2102。支撑元件2102通过多个横档2104耦合以限定孔2110,孔2110促进流量以很小的压降经过接触元件1916,如下所述。适用于接触球体1906的接触垫2106在每一弯曲部1944的末端2108耦合支撑元件2102。弯曲部1944一般由适用于化学处理使用的弹性和导电材料制成。在一个实施例中,弯曲部1944有镀金的铜铍合金制成。In the embodiment depicted in FIGS. 19-20A-B and in FIG. 21 , the
返回图19-20B,夹具衬套1916包括具有从其中延伸的螺纹柱1922的扩口头部1924。夹具衬套可以由绝缘或导电材料制造,且在一个实施例中,由与外壳1902相同的材料制成。扩口头部1924将弯曲部1944相对与球体组件1900的中心线呈锐角保持,以便接触元件1914的接触垫2106设置成分散在球体1906的表面上以阻止在球体组件1900的组装期间和穿过球体1906的运动范围时对弯曲部1944弯曲、捆绑和/或损伤。Returning to FIGS. 19-20B , the
夹具衬套1916的柱1922设置穿过基座1942中的孔1946以及穿过贯穿适配器1904形成的通道1936的螺纹部分1940。穿过夹具衬套1916形成的通道1918包括设置在扩口头部1924中的一端处的驱动装置1920。相似地,通道1936包括与螺纹部分1940相反的一端的驱动装置1938。驱动装置1920、1930类似于上述描述,且在一个实施例中,为适合于六角形驱动装置使用的六角形孔。夹具衬套1924紧固到能够保证在接触元件1914和适配器之间有良好接触而没有损伤接触元件1914或其它元件的程度。
适配器1904一般由适用于化学处理的导电材料制成,且在一个实施例中,由不锈钢制成。适配器1904包括具有从一侧延伸的螺纹柱1930的环形凸缘1932和从相反侧延伸的轴套1934。螺纹柱1930适用于与设置在压板1950中的接触板1980啮合,其将相应的球体组件1900中的球体1906耦合于电源1972。
轴套1934被接收在外壳1902的第二端1910中并向其提供用于夹持接触元件1914的表面。轴套1934还包括至少一个设置在轴套侧面的螺纹孔2006,该孔与穿过形成在外壳1902中的孔2004设置的结合件2002相啮合,由此将外壳1902固定于适配器1904并在其中接收球体1906。在图20A中描述的实施例中示出用于将外壳1902穿过反向凹孔2004耦合到适配器1904的三个结合件。预料到外壳1902和适配器1904可以由选择性的方法或器件来固定,例如立桩、粘合、键合、压配合、销钉、弹簧钉、铆钉和扣环,及其它。A
球体1904一般通过弹簧、浮力或流力的至少一种向抛光表面1906运动。在图19示出的实施例中,贯穿适配器1904和夹具衬套1916形成的通道1936、1918通过压板1950耦合于电解液源1970。电解液源1970通过通道1936和1918向空心外壳1902的内部提供电解液。电解液在座1926与球体1906之间退出外壳1902,因此导致球体1906在处理期间朝抛光表面偏置并与衬底114接触。
为了使经过外壳1906内的球体1906在不同高度的球体1906上的力相一致,在外壳1906的内壁中形成凸起或凹槽1928以接收弯曲部1944的末端(图21中的2108)以阻止对经过球体1908的电解液的流量限制。远离座1926设置的凹槽1928的一端在球体1906处于下降位置时一般构成为等于或小于球体1906的直径。In order to make the force passing through the
图22-24是具有球体组件另一实施例的导电部件的另一实施例的透视图和剖面图。22-24 are perspective and cross-sectional views of another embodiment of a conductive member with another embodiment of a ball assembly.
图22是ECMP台2290的另一实施的透视图。而图23-24是图22的ECMP台2290的球体组件的透视和局部剖面图。ECMP台2290包括支撑抛光垫组件2260(在图22中部分示出)的压板2250。压板2250包括至少一个从其中突起并耦合于电源1972的球体组件2200。球体组件2200适用于在处理期间电偏置衬底114(在图24中示出)表面。虽然在图22中示出一个球体组件耦合到压板2250的中心,可以使用任意数目的球体组件且可以相对于压板的中心线将任意数目的球体组件分散成任意数目的结构。FIG. 22 is a perspective view of another implementation of an
抛光垫组件2260可以包括电极2642和抛光层2466。在一个实施例中,抛光垫组件2260的抛光层2466可以包括绝缘的抛光表面2464,例如聚氨基甲酸酯垫。在另一实施例中,抛光垫组件2260的抛光层2466可以包括导电的抛光表面2464,例如具有导电颗粒分散在其中的聚合物基座或导电涂覆的织物,及其它。在抛光表面2464导电的实施例中,抛光表面2464和电极2462可以通过开关1974耦合于电源1972(由虚线示出),该开关允许电源在球体组件2200和导电抛光表面2464之间选择切换,已分别在不从抛光垫组件2260提升衬底114的情况下促进从衬底114去除大块金属和去除剩余金属。
球体组件2200一般耦合于压板2250并至少部分延伸穿过形成在抛光垫组件2260中的相应的孔2468。每一球体组件2200包括保持多个球体1906的外壳2302。球体可移动地设置在外壳2302,且其可以设置在具有在抛光表面2464上延伸的球体1906的至少一部分的第一位置和当球体1906与抛光表面2464齐平的至少第二位置。球体1906一般适合于电偏置衬底114并可以如上述构造。
外壳2302可移动地耦合于压板2250以利于在任意次数的抛光周期之后球体组件2200的替换。在一个实施例中,外壳2302包括耦合到下壳2306的上壳2304且在二者之间保持球体。上壳2304由适宜于化学处理的绝缘材料制成。在一个实施例中,上壳2304由PEEK制成。下壳2306由适宜于化学处理的导电材料制成。在一个实施例中,下壳2306由不锈钢制成。下壳2306耦合于电源1972。外壳2304、2306可以以任意方法耦合,包括但并不受限于,拧、插闩、铆钉、键合、立桩和夹持,及其它。在图22-24中描述的实施例中,外壳2304、2306通过多个螺丝钉2408耦合。
球体1906设置在贯穿外壳2304、2306形成的多个孔2402中。每一孔2402的上部包括从上壳2304延伸进孔2402的座2404。座2404构造成以阻止球体1906从孔2402的顶端脱离。
接触元件1914设置在每一孔2402中以将球体1906电耦合于下板2306。每一个接触元件1914通过相应的夹具衬套1916耦合于下板2306。在一个实施例中,夹具衬套1916的柱1922穿入贯穿外壳2302形成的孔2402的螺纹部分2410。A
每一孔2402的上部包括形成在上壳2304中的凸起或凹槽2406。凹槽2406构造成接收接触元件1914的末端,由此阻止对从电解液源1970流经于球体1906和外壳2302之间的电解液的限制。电解液源1970在处理期间通过孔2402提供电解液并与衬底114接触。The upper portion of each
在处理期间,设置在外壳2302内的球体2204通过弹簧、浮力或流力的至少一种向抛光表面2206运动。球体1906将衬底114通过接触元件1914和下板2306电耦合于电源1972。流经外壳2302的电解液在电极2462和偏置衬底114之间提供导电路径,由此驱动电化学抛光处理。During processing, ball 2204 disposed within
因此,已经提供了多种适合于衬底电化学抛光的导电部件的实施例。导电部件对衬底的表面提供良好的顺从性以促进提高抛光性能的均匀电接触。而且导电部件构造成以在处理期间最小化刮擦,有利地减小了缺陷的产生并由此降低了处理的单位损耗。Accordingly, various embodiments of conductive members suitable for electrochemical polishing of substrates have been provided. The conductive features provide good compliance to the surface of the substrate to facilitate uniform electrical contact that enhances polishing performance. Also the conductive member is configured to minimize scratching during processing, advantageously reducing the generation of defects and thereby reducing the unit loss of processing.
虽然前面涉及了本发明的多种实施例,本发明的其它以及另外的实施例可以在不脱离其基本范围的情况下作出,且本发明的范围由下述权利要求书确定。While the foregoing has described various embodiments of the invention, other and additional embodiments of the invention can be made without departing from the essential scope thereof, and the scope of the invention is defined by the following claims.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/210,972 | 2002-08-02 | ||
| US10/210,972US7303662B2 (en) | 2000-02-17 | 2002-08-02 | Contacts for electrochemical processing |
| US10/211,626 | 2002-08-02 | ||
| US10/211,626US7125477B2 (en) | 2000-02-17 | 2002-08-02 | Contacts for electrochemical processing |
| US10/608,513 | 2003-06-26 |
| Publication Number | Publication Date |
|---|---|
| CN1495863A CN1495863A (en) | 2004-05-12 |
| CN100466188Ctrue CN100466188C (en) | 2009-03-04 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031497071AExpired - Fee RelatedCN100466188C (en) | 2002-08-02 | 2003-08-04 | Conductive Polishing Parts for Electrochemical Mechanical Polishing |
| Country | Link |
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| KR (1) | KR20040012611A (en) |
| CN (1) | CN100466188C (en) |
| TW (1) | TWI300026B (en) |
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| WO2001071066A1 (en)* | 2000-03-17 | 2001-09-27 | Nu Tool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
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| TWI300026B (en) | 2008-08-21 |
| TW200407215A (en) | 2004-05-16 |
| KR20040012611A (en) | 2004-02-11 |
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