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CA2383740A1 - Silicon-based sensor system - Google Patents

Silicon-based sensor systemDownload PDF

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Publication number
CA2383740A1
CA2383740A1CA002383740ACA2383740ACA2383740A1CA 2383740 A1CA2383740 A1CA 2383740A1CA 002383740 ACA002383740 ACA 002383740ACA 2383740 ACA2383740 ACA 2383740ACA 2383740 A1CA2383740 A1CA 2383740A1
Authority
CA
Canada
Prior art keywords
microphone
silicon
surface mount
different elements
sensor system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002383740A
Other languages
French (fr)
Other versions
CA2383740C (en
Inventor
Matthias Mullenborn
Jochen F. Kuhmann
Peter U. Scheel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pulse Mems ApS
TDK Corp
Original Assignee
MEMS APS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/570,434external-prioritypatent/US6522762B1/en
Application filed by MEMS APSfiledCriticalMEMS APS
Publication of CA2383740A1publicationCriticalpatent/CA2383740A1/en
Application grantedgrantedCritical
Publication of CA2383740CpublicationCriticalpatent/CA2383740C/en
Anticipated expirationlegal-statusCritical
Expired - Fee Relatedlegal-statusCriticalCurrent

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Abstract

The present invention relates to solid state silicon-based condenser microphone systems suitable for batch production.
The combination of the different elements forming the microphone system is more flexible compared to any other system disclosed in the prior art. Electrical connections between the different elements of the microphone system are established economically and reliably via a silicon carrier using flip-chip technology. The invention uses an integrated electronic circuit chip, preferably an application specific integrated circuit (ASIC) which may be designed and manufactured separately and independent of the design and manufacture of the transducer element of the microphone. The complete sensor system can be electrically connected to an external substrate by surface mount technology with the contacts facing one side of the system that is not in conflict with the above-mentioned interface to the environment. This allows the user to apply simple and efficient surface mount techniques for the assembly of the overall system.
CA002383740A1999-09-062000-09-06Silicon-based sensor systemExpired - Fee RelatedCA2383740C (en)

Applications Claiming Priority (7)

Application NumberPriority DateFiling DateTitle
DKPA1999012541999-09-06
DKPA1999/012541999-09-06
US39162899A1999-09-071999-09-07
US09/391,6281999-09-07
US09/570,4342000-05-12
US09/570,434US6522762B1 (en)1999-09-072000-05-12Silicon-based sensor system
PCT/DK2000/000491WO2001019134A2 (en)1999-09-062000-09-06Silicon-based sensor system

Publications (2)

Publication NumberPublication Date
CA2383740A1true CA2383740A1 (en)2001-03-15
CA2383740C CA2383740C (en)2005-04-05

Family

ID=27221189

Family Applications (1)

Application NumberTitlePriority DateFiling Date
CA002383740AExpired - Fee RelatedCA2383740C (en)1999-09-062000-09-06Silicon-based sensor system

Country Status (10)

CountryLink
EP (1)EP1214864B1 (en)
JP (2)JP4459498B2 (en)
CN (1)CN1203726C (en)
AT (1)ATE242587T1 (en)
AU (1)AU6984100A (en)
CA (1)CA2383740C (en)
DE (1)DE60003199T2 (en)
DK (1)DK1214864T3 (en)
PL (1)PL209935B1 (en)
WO (1)WO2001019134A2 (en)

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USRE40781E1 (en)2001-05-312009-06-23Pulse Mems ApsMethod of providing a hydrophobic layer and condenser microphone having such a layer

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WO2010045107A2 (en)*2008-10-142010-04-22Knowles Electronics, LlcMicrophone having multiple transducer elements
JP2012527835A (en)*2009-05-182012-11-08ノールズ エレクトロニクス，リミテッド ライアビリティ カンパニー Microphone with low vibration sensitivity
KR101609270B1 (en)2009-08-122016-04-06삼성전자주식회사Piezoelectric micro speaker and method of manufacturing the same
DE102009047592B4 (en)*2009-12-072019-06-19Robert Bosch Gmbh Process for producing a silicon intermediate carrier
IT1397976B1 (en)*2009-12-232013-02-04St Microelectronics Rousset MICROELETTROMECHANICAL TRANSDUCER AND RELATIVE ASSEMBLY PROCEDURE.
JP2013093637A (en)*2010-02-242013-05-16Panasonic CorpSemiconductor device and manufacturing method of the same
TWI491009B (en)2010-10-082015-07-01Chip level emi shielding structure and manufacture method thereof
CN102456669B (en)*2010-10-252015-07-22环旭电子股份有限公司Chip-grade electromagnetic interference shielding structure and manufacturing method thereof
WO2012088688A1 (en)*2010-12-302012-07-05Goertek Inc.A mems microphone and method for packaging the same
JP5721452B2 (en)*2011-01-272015-05-20ローム株式会社 Capacitive MEMS sensor
JP5799619B2 (en)2011-06-242015-10-28船井電機株式会社 Microphone unit
DE102011086722A1 (en)*2011-11-212013-05-23Robert Bosch Gmbh Micromechanical functional device, in particular speaker device, and corresponding manufacturing method
US20130147040A1 (en)*2011-12-092013-06-13Robert Bosch GmbhMems chip scale package
DE102012203373A1 (en)*2012-03-052013-09-05Robert Bosch Gmbh Micromechanical sound transducer arrangement and a corresponding manufacturing method
US20140090485A1 (en)*2012-10-022014-04-03Robert Bosch GmbhMEMS Pressure Sensor Assembly
WO2014094831A1 (en)2012-12-182014-06-26Epcos AgTop-port mems microphone and method of manufacturing the same
US20140312439A1 (en)*2013-04-192014-10-23Infineon Technologies AgMicrophone Module and Method of Manufacturing Thereof
ITTO20130350A1 (en)*2013-04-302014-10-31St Microelectronics Srl SLICE ASSEMBLY OF A MEMS SENSOR DEVICE AND RELATIVE MEMS SENSOR DEVICE
US9264832B2 (en)*2013-10-302016-02-16Solid State System Co., Ltd.Microelectromechanical system (MEMS) microphone with protection film and MEMS microphonechips at wafer level
GB2543443B (en)*2014-06-102017-09-13Cirrus Logic Int Semiconductor LtdPackaging for MEMS transducers
JP6657545B2 (en)*2014-09-172020-03-04インテル・コーポレーション Die with integrated microphone device using through silicon via (TSV)
CN104780490A (en)*2015-04-202015-07-15歌尔声学股份有限公司MEMS microphone packaging structure and manufacturing method thereof
TWI660466B (en)*2017-04-262019-05-21矽品精密工業股份有限公司Package structure and method of manufacture thereof
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US5870482A (en)*1997-02-251999-02-09Knowles Electronics, Inc.Miniature silicon condenser microphone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
USRE40781E1 (en)2001-05-312009-06-23Pulse Mems ApsMethod of providing a hydrophobic layer and condenser microphone having such a layer

Also Published As

Publication numberPublication date
JP2007028671A (en)2007-02-01
JP2003508998A (en)2003-03-04
DE60003199D1 (en)2003-07-10
DE60003199T2 (en)2004-07-01
ATE242587T1 (en)2003-06-15
JP4303742B2 (en)2009-07-29
WO2001019134A2 (en)2001-03-15
JP4459498B2 (en)2010-04-28
CA2383740C (en)2005-04-05
EP1214864B1 (en)2003-06-04
CN1387741A (en)2002-12-25
PL354095A1 (en)2003-12-29
DK1214864T3 (en)2003-08-25
WO2001019134A3 (en)2001-09-07
AU6984100A (en)2001-04-10
EP1214864A2 (en)2002-06-19
PL209935B1 (en)2011-11-30
CN1203726C (en)2005-05-25

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EEERExamination request
MKLALapsed

Effective date:20190906
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