Movatterモバイル変換


[0]ホーム

URL:


AU2001294743A1 - Writable tracking cells - Google Patents

Writable tracking cells

Info

Publication number
AU2001294743A1
AU2001294743A1AU2001294743AAU9474301AAU2001294743A1AU 2001294743 A1AU2001294743 A1AU 2001294743A1AU 2001294743 AAU2001294743 AAU 2001294743AAU 9474301 AAU9474301 AAU 9474301AAU 2001294743 A1AU2001294743 A1AU 2001294743A1
Authority
AU
Australia
Prior art keywords
cells
tracking
logic levels
user
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001294743A
Inventor
Kevin M. Conley
Geoffrey S. Gongwer
Daniel C. Guterman
Shahzad B. Khalid
Richard Simko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk CorpfiledCriticalSanDisk Corp
Publication of AU2001294743A1publicationCriticalpatent/AU2001294743A1/en
Abandonedlegal-statusCriticalCurrent

Links

Classifications

Landscapes

Abstract

The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same fixed, global reference levels to set the tracking and user cell programmed thresholds. The threshold voltages of the tracking cells are read every time the user cells are read, and these thresholds are used to determine the stored logic levels of the user cells. In one set of embodiments, populations of one or more tracking cells are associated with different logic levels of a multi-state memory. These tracking cell populations may be provided for only a subset of the logic levels. The read points for translating the threshold voltages are derived for all of the logic levels based upon this subset. In one embodiment, two populations each consisting of multiple tracking cells are associated with two logic levels of the multi-bit cell. In an analog implementation, the user cells are read directly using the analog threshold values of the tracking cell populations without their first being translated to digital values. A set of alternate embodiments provide for using different voltages and/or timing for the writing of tracking cells to provide less uncertainty in the tracking cells' final written thresholds.
AU2001294743A2000-09-272001-09-25Writable tracking cellsAbandonedAU2001294743A1 (en)

Applications Claiming Priority (3)

Application NumberPriority DateFiling DateTitle
US09/671,793US6538922B1 (en)2000-09-272000-09-27Writable tracking cells
US09/671,7932000-09-27
PCT/US2001/030123WO2002027729A2 (en)2000-09-272001-09-25Writable tracking cells

Publications (1)

Publication NumberPublication Date
AU2001294743A1true AU2001294743A1 (en)2002-04-08

Family

ID=24695908

Family Applications (1)

Application NumberTitlePriority DateFiling Date
AU2001294743AAbandonedAU2001294743A1 (en)2000-09-272001-09-25Writable tracking cells

Country Status (10)

CountryLink
US (3)US6538922B1 (en)
EP (2)EP1332500B1 (en)
JP (1)JP2004510286A (en)
KR (1)KR100760886B1 (en)
CN (1)CN1273992C (en)
AT (1)ATE370498T1 (en)
AU (1)AU2001294743A1 (en)
DE (1)DE60130012T2 (en)
TW (1)TW561480B (en)
WO (1)WO2002027729A2 (en)

Families Citing this family (163)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6747892B2 (en)2000-11-212004-06-08Sandisk CorporationSense amplifier for multilevel non-volatile integrated memory devices
TW559814B (en)*2001-05-312003-11-01Semiconductor Energy LabNonvolatile memory and method of driving the same
US6678192B2 (en)2001-11-022004-01-13Sandisk CorporationError management for writable tracking storage units
JP3796457B2 (en)*2002-02-282006-07-12富士通株式会社 Nonvolatile semiconductor memory device
US6690602B1 (en)2002-04-082004-02-10Advanced Micro Devices, Inc.Algorithm dynamic reference programming
US6618297B1 (en)*2002-08-022003-09-09Atmel CorporationMethod of establishing reference levels for sensing multilevel memory cell states
US6963505B2 (en)*2002-10-292005-11-08Aifun Semiconductors Ltd.Method circuit and system for determining a reference voltage
JP4113423B2 (en)*2002-12-042008-07-09シャープ株式会社 Semiconductor memory device and reference cell correction method
US7073103B2 (en)*2002-12-052006-07-04Sandisk CorporationSmart verify for multi-state memories
JP4067956B2 (en)*2002-12-202008-03-26スパンション エルエルシー Nonvolatile memory control method and nonvolatile memory
US6956768B2 (en)*2003-04-152005-10-18Advanced Micro Devices, Inc.Method of programming dual cell memory device to store multiple data states per cell
US7237074B2 (en)*2003-06-132007-06-26Sandisk CorporationTracking cells for a memory system
US7324374B2 (en)*2003-06-202008-01-29Spansion LlcMemory with a core-based virtual ground and dynamic reference sensing scheme
US6917542B2 (en)*2003-07-292005-07-12Sandisk CorporationDetecting over programmed memory
EP1654736B1 (en)*2003-07-302009-09-16SanDisk IL Ltd.Method and system for optimizing reliability and performance of programming data in non-volatile memory devices
US7301807B2 (en)*2003-10-232007-11-27Sandisk CorporationWritable tracking cells
US6961279B2 (en)*2004-03-102005-11-01Linear Technology CorporationFloating gate nonvolatile memory circuits and methods
US7957189B2 (en)*2004-07-262011-06-07Sandisk Il Ltd.Drift compensation in a flash memory
US7817469B2 (en)*2004-07-262010-10-19Sandisk Il Ltd.Drift compensation in a flash memory
US7257025B2 (en)*2004-12-092007-08-14Saifun Semiconductors LtdMethod for reading non-volatile memory cells
US7161831B2 (en)*2005-06-102007-01-09Macronix International Co., Ltd.Leaf plot analysis technique for multiple-side operated devices
CN100466105C (en)*2005-06-142009-03-04旺宏电子股份有限公司Method for reading bit of silicon nitride read-only memory cell
US7301817B2 (en)*2005-10-272007-11-27Sandisk CorporationMethod for programming of multi-state non-volatile memory using smart verify
US7366022B2 (en)*2005-10-272008-04-29Sandisk CorporationApparatus for programming of multi-state non-volatile memory using smart verify
US8725929B1 (en)2006-11-062014-05-13Marvell World Trade Ltd.Adaptive read and write systems and methods for memory cells
US8645793B2 (en)2008-06-032014-02-04Marvell International Ltd.Statistical tracking for flash memory
KR101202537B1 (en)*2006-05-122012-11-19애플 인크.Combined distortion estimation and error correction coding for memory devices
WO2007132452A2 (en)*2006-05-122007-11-22Anobit TechnologiesReducing programming error in memory devices
WO2007132456A2 (en)*2006-05-122007-11-22Anobit Technologies Ltd.Memory device with adaptive capacity
WO2007132453A2 (en)2006-05-122007-11-22Anobit Technologies Ltd.Distortion estimation and cancellation in memory devices
US7613043B2 (en)2006-05-152009-11-03Apple Inc.Shifting reference values to account for voltage sag
US7852690B2 (en)2006-05-152010-12-14Apple Inc.Multi-chip package for a flash memory
US7639542B2 (en)2006-05-152009-12-29Apple Inc.Maintenance operations for multi-level data storage cells
US7701797B2 (en)2006-05-152010-04-20Apple Inc.Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7511646B2 (en)2006-05-152009-03-31Apple Inc.Use of 8-bit or higher A/D for NAND cell value
US7840875B2 (en)*2006-05-152010-11-23Sandisk CorporationConvolutional coding methods for nonvolatile memory
US7551486B2 (en)2006-05-152009-06-23Apple Inc.Iterative memory cell charging based on reference cell value
US20070266296A1 (en)*2006-05-152007-11-15Conley Kevin MNonvolatile Memory with Convolutional Coding
US7568135B2 (en)2006-05-152009-07-28Apple Inc.Use of alternative value in cell detection
US8000134B2 (en)2006-05-152011-08-16Apple Inc.Off-die charge pump that supplies multiple flash devices
US7911834B2 (en)2006-05-152011-03-22Apple Inc.Analog interface for a flash memory die
US7639531B2 (en)2006-05-152009-12-29Apple Inc.Dynamic cell bit resolution
WO2008026203A2 (en)2006-08-272008-03-06Anobit TechnologiesEstimation of non-linear distortion in memory devices
US20080092015A1 (en)*2006-09-282008-04-17Yigal BrandmanNonvolatile memory with adaptive operation
US7818653B2 (en)*2006-09-282010-10-19Sandisk CorporationMethods of soft-input soft-output decoding for nonvolatile memory
US7904783B2 (en)*2006-09-282011-03-08Sandisk CorporationSoft-input soft-output decoder for nonvolatile memory
US7805663B2 (en)*2006-09-282010-09-28Sandisk CorporationMethods of adapting operation of nonvolatile memory
US7975192B2 (en)*2006-10-302011-07-05Anobit Technologies Ltd.Reading memory cells using multiple thresholds
WO2008053473A2 (en)2006-10-302008-05-08Anobit Technologies Ltd.Memory cell readout using successive approximation
US7904780B2 (en)*2006-11-032011-03-08Sandisk CorporationMethods of modulating error correction coding
US7904788B2 (en)*2006-11-032011-03-08Sandisk CorporationMethods of varying read threshold voltage in nonvolatile memory
US8001441B2 (en)*2006-11-032011-08-16Sandisk Technologies Inc.Nonvolatile memory with modulated error correction coding
US7558109B2 (en)*2006-11-032009-07-07Sandisk CorporationNonvolatile memory with variable read threshold
US7941590B2 (en)*2006-11-062011-05-10Marvell World Trade Ltd.Adaptive read and write systems and methods for memory cells
US7924648B2 (en)2006-11-282011-04-12Anobit Technologies Ltd.Memory power and performance management
WO2008068747A2 (en)*2006-12-032008-06-12Anobit Technologies Ltd.Automatic defect management in memory devices
US7593263B2 (en)*2006-12-172009-09-22Anobit Technologies Ltd.Memory device with reduced reading latency
US7900102B2 (en)*2006-12-172011-03-01Anobit Technologies Ltd.High-speed programming of memory devices
US8151166B2 (en)*2007-01-242012-04-03Anobit Technologies Ltd.Reduction of back pattern dependency effects in memory devices
US7751240B2 (en)*2007-01-242010-07-06Anobit Technologies Ltd.Memory device with negative thresholds
US8369141B2 (en)*2007-03-122013-02-05Apple Inc.Adaptive estimation of memory cell read thresholds
US7808834B1 (en)2007-04-132010-10-05Marvell International Ltd.Incremental memory refresh
US8001320B2 (en)*2007-04-222011-08-16Anobit Technologies Ltd.Command interface for memory devices
WO2008139441A2 (en)2007-05-122008-11-20Anobit Technologies Ltd.Memory device with internal signal processing unit
US8234545B2 (en)*2007-05-122012-07-31Apple Inc.Data storage with incremental redundancy
US7925936B1 (en)2007-07-132011-04-12Anobit Technologies Ltd.Memory device with non-uniform programming levels
US8259497B2 (en)2007-08-062012-09-04Apple Inc.Programming schemes for multi-level analog memory cells
US7969788B2 (en)2007-08-212011-06-28Micron Technology, Inc.Charge loss compensation methods and apparatus
US8031526B1 (en)2007-08-232011-10-04Marvell International Ltd.Write pre-compensation for nonvolatile memory
US8189381B1 (en)2007-08-282012-05-29Marvell International Ltd.System and method for reading flash memory cells
US8085605B2 (en)2007-08-292011-12-27Marvell World Trade Ltd.Sequence detection for flash memory with inter-cell interference
JP5280027B2 (en)*2007-09-182013-09-04スパンション エルエルシー Semiconductor device and control method thereof
US8174905B2 (en)*2007-09-192012-05-08Anobit Technologies Ltd.Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en)2007-10-082010-08-10Anobit Technologies Ltd.Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en)2007-10-192011-08-16Anobit Technologies Ltd.Compensation for voltage drifts in analog memory cells
US8068360B2 (en)*2007-10-192011-11-29Anobit Technologies Ltd.Reading analog memory cells using built-in multi-threshold commands
US8527819B2 (en)*2007-10-192013-09-03Apple Inc.Data storage in analog memory cell arrays having erase failures
US8270246B2 (en)*2007-11-132012-09-18Apple Inc.Optimized selection of memory chips in multi-chips memory devices
US8225181B2 (en)2007-11-302012-07-17Apple Inc.Efficient re-read operations from memory devices
US8209588B2 (en)*2007-12-122012-06-26Anobit Technologies Ltd.Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en)2007-12-162013-06-04Apple Inc.Efficient data storage in multi-plane memory devices
US8085586B2 (en)*2007-12-272011-12-27Anobit Technologies Ltd.Wear level estimation in analog memory cells
US8156398B2 (en)*2008-02-052012-04-10Anobit Technologies Ltd.Parameter estimation based on error correction code parity check equations
US7924587B2 (en)*2008-02-212011-04-12Anobit Technologies Ltd.Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en)2008-02-242011-01-04Anobit Technologies Ltd.Programming analog memory cells for reduced variance after retention
US8230300B2 (en)*2008-03-072012-07-24Apple Inc.Efficient readout from analog memory cells using data compression
US8400858B2 (en)2008-03-182013-03-19Apple Inc.Memory device with reduced sense time readout
US8059457B2 (en)*2008-03-182011-11-15Anobit Technologies Ltd.Memory device with multiple-accuracy read commands
US8498151B1 (en)2008-08-052013-07-30Apple Inc.Data storage in analog memory cells using modified pass voltages
US7924613B1 (en)2008-08-052011-04-12Anobit Technologies Ltd.Data storage in analog memory cells with protection against programming interruption
US8949684B1 (en)2008-09-022015-02-03Apple Inc.Segmented data storage
US8169825B1 (en)2008-09-022012-05-01Anobit Technologies Ltd.Reliable data storage in analog memory cells subjected to long retention periods
US8000135B1 (en)2008-09-142011-08-16Anobit Technologies Ltd.Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en)2008-09-142013-07-09Apple Inc.Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en)2008-10-152012-08-07Apple Inc.Efficient data storage in storage device arrays
US8713330B1 (en)2008-10-302014-04-29Apple Inc.Data scrambling in memory devices
US8208304B2 (en)*2008-11-162012-06-26Anobit Technologies Ltd.Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8174857B1 (en)2008-12-312012-05-08Anobit Technologies Ltd.Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8248831B2 (en)*2008-12-312012-08-21Apple Inc.Rejuvenation of analog memory cells
US8924661B1 (en)2009-01-182014-12-30Apple Inc.Memory system including a controller and processors associated with memory devices
US8228701B2 (en)2009-03-012012-07-24Apple Inc.Selective activation of programming schemes in analog memory cell arrays
US8259506B1 (en)2009-03-252012-09-04Apple Inc.Database of memory read thresholds
US8832354B2 (en)*2009-03-252014-09-09Apple Inc.Use of host system resources by memory controller
US8199576B2 (en)*2009-04-082012-06-12Sandisk 3D LlcThree-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US8351236B2 (en)2009-04-082013-01-08Sandisk 3D LlcThree-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US7983065B2 (en)*2009-04-082011-07-19Sandisk 3D LlcThree-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
EP2417599B1 (en)2009-04-082016-09-28SanDisk Technologies, Inc.Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US8238157B1 (en)2009-04-122012-08-07Apple Inc.Selective re-programming of analog memory cells
US8479080B1 (en)2009-07-122013-07-02Apple Inc.Adaptive over-provisioning in memory systems
US8495465B1 (en)2009-10-152013-07-23Apple Inc.Error correction coding over multiple memory pages
US8677054B1 (en)2009-12-162014-03-18Apple Inc.Memory management schemes for non-volatile memory devices
US8694814B1 (en)2010-01-102014-04-08Apple Inc.Reuse of host hibernation storage space by memory controller
US8572311B1 (en)2010-01-112013-10-29Apple Inc.Redundant data storage in multi-die memory systems
US8446753B2 (en)*2010-03-252013-05-21Qualcomm IncorporatedReference cell write operations at a memory
US8694853B1 (en)2010-05-042014-04-08Apple Inc.Read commands for reading interfering memory cells
US8547720B2 (en)2010-06-082013-10-01Sandisk 3D LlcNon-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
US8526237B2 (en)2010-06-082013-09-03Sandisk 3D LlcNon-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US8572423B1 (en)2010-06-222013-10-29Apple Inc.Reducing peak current in memory systems
US8595591B1 (en)2010-07-112013-11-26Apple Inc.Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en)2010-07-272015-08-11Apple Inc.Cache memory for hybrid disk drives
US8645794B1 (en)2010-07-312014-02-04Apple Inc.Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en)2010-08-012014-10-07Apple Inc.Efficient selection of memory blocks for compaction
US8694854B1 (en)2010-08-172014-04-08Apple Inc.Read threshold setting based on soft readout statistics
US9021181B1 (en)2010-09-272015-04-28Apple Inc.Memory management for unifying memory cell conditions by using maximum time intervals
US8374031B2 (en)2010-09-292013-02-12SanDisk Technologies, Inc.Techniques for the fast settling of word lines in NAND flash memory
KR101802448B1 (en)*2010-10-122017-11-28삼성전자주식회사Phase change material memory device and method of performing re-write of the same
US9227456B2 (en)2010-12-142016-01-05Sandisk 3D LlcMemories with cylindrical read/write stacks
US9030859B2 (en)2010-12-142015-05-12Sandisk 3D LlcThree dimensional non-volatile storage with dual layers of select devices
US8824183B2 (en)2010-12-142014-09-02Sandisk 3D LlcNon-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof
US8498152B2 (en)2010-12-232013-07-30Sandisk Il Ltd.Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling
US8782495B2 (en)*2010-12-232014-07-15Sandisk Il LtdNon-volatile memory and methods with asymmetric soft read points around hard read points
US8099652B1 (en)*2010-12-232012-01-17Sandisk CorporationNon-volatile memory and methods with reading soft bits in non uniform schemes
WO2012102785A2 (en)*2011-01-272012-08-02Rambus Inc.Memory cell with multiple sense mechanisms
US9269425B2 (en)2011-12-302016-02-23Sandisk 3D LlcLow forming voltage non-volatile storage device
US8737132B2 (en)2012-01-062014-05-27Sandisk Technologies Inc.Charge cycling by equalizing the source and bit line levels between pulses during no-verify write operations for NAND flash memory
US9645177B2 (en)*2012-05-042017-05-09Seagate Technology LlcRetention-drift-history-based non-volatile memory read threshold optimization
US9171584B2 (en)2012-05-152015-10-27Sandisk 3D LlcThree dimensional non-volatile storage with interleaved vertical select devices above and below vertical bit lines
US9147439B2 (en)2012-06-152015-09-29Sandisk 3D LlcNon-volatile memory having 3D array architecture with staircase word lines and vertical bit lines and methods thereof
US9281029B2 (en)2012-06-152016-03-08Sandisk 3D LlcNon-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US9025374B2 (en)2012-12-132015-05-05Sandisk Technologies Inc.System and method to update read voltages in a non-volatile memory in response to tracking data
WO2014138124A1 (en)2013-03-042014-09-12Sandisk 3D LlcVertical bit line non-volatile memory systems and methods of fabrication
US9064547B2 (en)2013-03-052015-06-23Sandisk 3D Llc3D non-volatile memory having low-current cells and methods
US9165933B2 (en)2013-03-072015-10-20Sandisk 3D LlcVertical bit line TFT decoder for high voltage operation
US9105468B2 (en)2013-09-062015-08-11Sandisk 3D LlcVertical bit line wide band gap TFT decoder
US9362338B2 (en)2014-03-032016-06-07Sandisk Technologies Inc.Vertical thin film transistors in non-volatile storage systems
US9379246B2 (en)2014-03-052016-06-28Sandisk Technologies Inc.Vertical thin film transistor selection devices and methods of fabrication
US9123392B1 (en)2014-03-282015-09-01Sandisk 3D LlcNon-volatile 3D memory with cell-selectable word line decoding
US9627009B2 (en)2014-07-252017-04-18Sandisk Technologies LlcInterleaved grouped word lines for three dimensional non-volatile storage
US9443606B2 (en)2014-10-282016-09-13Sandisk Technologies LlcWord line dependent two strobe sensing mode for nonvolatile storage elements
US9450023B1 (en)2015-04-082016-09-20Sandisk Technologies LlcVertical bit line non-volatile memory with recessed word lines
US9502123B2 (en)*2015-04-212016-11-22Sandisk Technologies LlcAdaptive block parameters
US9530513B1 (en)2015-11-252016-12-27Intel CorporationMethods and apparatus to read memory cells based on clock pulse counts
EP3443107A1 (en)2016-04-132019-02-20Synthetic Genomics, Inc.Recombinant arterivirus replicon systems and uses thereof
KR102718353B1 (en)2016-10-172024-10-15얀센 파마슈티칼즈, 인코포레이티드 Recombinant viral replicon system and uses thereof
WO2018106615A2 (en)2016-12-052018-06-14Synthetic Genomics, Inc.Compositions and methods for enhancing gene expression
JP2018160303A (en)*2017-03-232018-10-11東芝メモリ株式会社 Semiconductor memory device
EA202091516A1 (en)2017-12-192020-11-03Янссен Сайенсиз Айрлэнд Анлимитед Компани METHODS AND COMPOSITIONS FOR INDUCING IMMUNE RESPONSE AGAINST HEPATITIS B VIRUS (HBV)
EA202091517A1 (en)2017-12-192020-11-03Янссен Сайенсиз Айрлэнд Анлимитед Компани METHODS AND DEVICE FOR DELIVERY OF VACCINES AGAINST HEPATITIS B VIRUS (HBV)
EA202091513A1 (en)2017-12-192020-09-09Янссен Сайенсиз Айрлэнд Анлимитед Компани VACCINES AGAINST HEPATITIS B VIRUS (HBV) AND THEIR APPLICATION
EP3740245A4 (en)2018-01-192022-01-05Janssen Pharmaceuticals, Inc.Induce and enhance immune responses using recombinant replicon systems
EA202190907A1 (en)2018-10-082021-06-25Янссен Фармасьютикалз, Инк. REPLICONS BASED ON ALPHAVIRUS FOR THE ADMINISTRATION OF BIOTHERAPEUTIC AGENTS
US11556416B2 (en)2021-05-052023-01-17Apple Inc.Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en)2021-07-282023-12-19Apple Inc.Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
IT1221018B (en)1985-03-281990-06-21Giulio Casagrande DEVICE TO VERIFY MEMORY CELLS ACCORDING TO THE THRESHOLD JUMPING OBTAINABLE IN THE WRITING PHASE
IT1221780B (en)1988-01-291990-07-12Sgs Thomson Microelectronics STATE CELL DETECTION CIRCUIT IN EPROM MEMORIES IN MOS TECHNOLOGY
US5268870A (en)1988-06-081993-12-07Eliyahou HarariFlash EEPROM system and intelligent programming and erasing methods therefor
US5095344A (en)1988-06-081992-03-10Eliyahou HarariHighly compact eprom and flash eeprom devices
US5043940A (en)1988-06-081991-08-27Eliyahou HarariFlash EEPROM memory systems having multistate storage cells
JPH0713877B2 (en)1988-10-191995-02-15株式会社東芝 Semiconductor memory
JPH0814994B2 (en)1989-01-131996-02-14株式会社東芝 Semiconductor memory device
IT1228822B (en)1989-03-231991-07-04Sgs Thomson Microelectronics REFERENCE CELL FOR READING EEPROM MEMORY DEVICES.
EP0935255A2 (en)1989-04-131999-08-11SanDisk CorporationFlash EEPROM system
US5172338B1 (en)1989-04-131997-07-08Sandisk CorpMulti-state eeprom read and write circuits and techniques
US5163021A (en)*1989-04-131992-11-10Sundisk CorporationMulti-state EEprom read and write circuits and techniques
US5293345A (en)1989-06-121994-03-08Kabushiki Kaisha ToshibaSemiconductor memory device having a data detection circuit with two reference potentials
US5198997A (en)1989-08-111993-03-30Sony CorporationUltraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
EP0424172B1 (en)1989-10-201995-01-18Fujitsu LimitedNonvolatile semiconductor memory apparatus
IT1244293B (en)1990-07-061994-07-08Sgs Thomson Microelectronics READING DEVICE FOR EPROM CELLS WITH OPERATING FIELD INDEPENDENT FROM THE LEAD THRESHOLD OF THE WRITTEN CELLS COMPARED TO VIRGIN CELLS
IT1247650B (en)1990-10-311994-12-28Sgs Thomson Microelectronics FLASH EPROM MEMORY WITH INCREASED SOFT PROGRAMMING IMMUNITY ON A REFERENCE LINE
JP3454520B2 (en)1990-11-302003-10-06インテル・コーポレーション Circuit and method for checking write state of flash storage device
US5287315A (en)1991-01-311994-02-15Texas Instruments IncorporatedSkewed reference to improve ones and zeros in EPROM arrays
US6002614A (en)1991-02-081999-12-14Btg International Inc.Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JP3210355B2 (en)1991-03-042001-09-17株式会社東芝 Nonvolatile semiconductor memory device
US5270979A (en)1991-03-151993-12-14Sundisk CorporationMethod for optimum erasing of EEPROM
JPH04291940A (en)1991-03-201992-10-16Toshiba CorpNonvolatile memory
US5142496A (en)1991-06-031992-08-25Advanced Micro Devices, Inc.Method for measuring VT 's less than zero without applying negative voltages
EP0526427B1 (en)1991-07-251997-10-15STMicroelectronics S.r.l.Sense amplifier for programmable memories with a virtually enhanced source of signal
US5430859A (en)1991-07-261995-07-04Sundisk CorporationSolid state memory system including plural memory chips and a serialized bus
US5361227A (en)1991-12-191994-11-01Kabushiki Kaisha ToshibaNon-volatile semiconductor memory device and memory system using the same
US5313421A (en)1992-01-141994-05-17Sundisk CorporationEEPROM with split gate source side injection
US6222762B1 (en)1992-01-142001-04-24Sandisk CorporationMulti-state memory
US5532962A (en)1992-05-201996-07-02Sandisk CorporationSoft errors handling in EEPROM devices
US5315541A (en)1992-07-241994-05-24Sundisk CorporationSegmented column memory array
US5386132A (en)1992-11-021995-01-31Wong; Chun C. D.Multimedia storage system with highly compact memory device
US5712189A (en)1993-04-301998-01-27Texas Instruments IncorporatedEpitaxial overgrowth method
US5463586A (en)1993-05-281995-10-31Macronix International Co., Ltd.Erase and program verification circuit for non-volatile memory
US5608676A (en)1993-08-311997-03-04Crystal Semiconductor CorporationCurrent limited current reference for non-volatile memory sensing
US5828601A (en)1993-12-011998-10-27Advanced Micro Devices, Inc.Programmed reference
GB9401227D0 (en)1994-01-221994-03-16Deas Alexander RNon-volatile digital memory device with multi-level storage cells
JP3415254B2 (en)1994-04-152003-06-09株式会社東芝 Nonvolatile semiconductor memory device
US5608679A (en)*1994-06-021997-03-04Intel CorporationFast internal reference cell trimming for flash EEPROM memory
US5493533A (en)1994-09-281996-02-20Atmel CorporationDual differential trans-impedance sense amplifier and method
US5532623A (en)1994-10-211996-07-02Waferscale Integration, Inc.Sense amplifier with read current tracking and zero standby power consumption
US5694356A (en)*1994-11-021997-12-02Invoice Technology, Inc.High resolution analog storage EPROM and flash EPROM
US5684739A (en)1994-11-301997-11-04Nkk CorporationApparatus and method for determining current or voltage of a semiconductor device
US5537358A (en)1994-12-061996-07-16National Semiconductor CorporationFlash memory having adaptive sensing and method
US5541886A (en)1994-12-271996-07-30Intel CorporationMethod and apparatus for storing control information in multi-bit non-volatile memory arrays
US5687114A (en)*1995-10-061997-11-11Agate Semiconductor, Inc.Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US5629892A (en)1995-10-161997-05-13Advanced Micro Devices, Inc.Flash EEPROM memory with separate reference array
KR0172533B1 (en)1995-10-181999-03-30김주용 Flash memory device
KR0172364B1 (en)1995-11-061999-03-30김광호Elimination detecting method using reference cell of non-volatile semiconductor memory
JPH09139089A (en)1995-11-131997-05-27Sony CorpFerroelectric substance storage device
JP3581207B2 (en)1996-02-132004-10-27株式会社東芝 Non-volatile semiconductor memory
TW338158B (en)1996-02-291998-08-11Sanyo Electric CoNon volatile semiconductor memory device
EP0798740B1 (en)*1996-03-292003-11-12STMicroelectronics S.r.l.Reference system for determining the programmed/non-programmed status of a memory cell, particularly for non-volatile memories
JPH09270195A (en)1996-04-021997-10-14Sharp Corp Semiconductor memory device
US5712815A (en)*1996-04-221998-01-27Advanced Micro Devices, Inc.Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
EP0805454A1 (en)1996-04-301997-11-05STMicroelectronics S.r.l.Sensing circuit for reading and verifying the content of a memory cell
WO2004090908A1 (en)1996-06-112004-10-21Nobuyoshi TakeuchiNonvolatile memory having verifying function
DE69631123D1 (en)1996-06-182004-01-29St Microelectronics Srl Method and circuit for reading non-volatile memory cells with a low supply voltage
EP0814484B1 (en)1996-06-182003-09-17STMicroelectronics S.r.l.Nonvolatile memory with a single-cell reference signal generating circuit for reading memory cells
DE69702256T2 (en)1996-06-242001-01-18Advanced Micro Devices, Inc. METHOD FOR A MULTIPLE, BITS PER CELL FLASH EEPROM, MEMORY WITH SIDE PROGRAMMING MODE, AND READING METHOD
WO1998003978A1 (en)1996-07-181998-01-29Nkk CorporationReference apparatus, reference level setting method, self-diagnosis method and nonvolatile semiconductor memory
JPH10302486A (en)1996-08-301998-11-13Sanyo Electric Co LtdSemiconductor memory
US5790453A (en)1996-10-241998-08-04Micron Quantum Devices, Inc.Apparatus and method for reading state of multistate non-volatile memory cells
JPH10134587A (en)1996-10-291998-05-22Sony CorpNonvolatile semiconductor memory device
US5774395A (en)1996-11-271998-06-30Advanced Micro Devices, Inc.Electrically erasable reference cell for accurately determining threshold voltage of a non-volatile memory at a plurality of threshold voltage levels
FR2760888B1 (en)1997-03-111999-05-07Sgs Thomson Microelectronics READING CIRCUIT FOR MEMORY SUITABLE FOR MEASURING LEAKAGE CURRENTS
EP0872850B1 (en)1997-04-142003-07-02STMicroelectronics S.r.l.High-precision analog reading circuit for memory arrays, in particular flash analog memory arrays
JP3169858B2 (en)1997-06-202001-05-28日本電気アイシーマイコンシステム株式会社 Multi-level semiconductor memory device
JP3039458B2 (en)1997-07-072000-05-08日本電気株式会社 Non-volatile semiconductor memory
IT1293644B1 (en)1997-07-251999-03-08Sgs Thomson Microelectronics CIRCUIT AND METHOD OF READING THE CELLS OF AN ANALOG MEMORY MATRIX, IN PARTICULAR OF THE FLASH TYPE
JPH1166875A (en)1997-08-181999-03-09Fujitsu Ltd Semiconductor memory circuit
JP3730373B2 (en)1997-09-022006-01-05株式会社東芝 Semiconductor memory device
JPH11213684A (en)1998-01-281999-08-06Toshiba Corp Non-volatile semiconductor memory
DE69827109D1 (en)1998-02-132004-11-25St Microelectronics Srl Sensing amplifier for non-volatile memory with low voltage
JPH11274437A (en)1998-03-261999-10-08Sanyo Electric Co LtdNon-volatile semiconductor memory device
FR2778012B1 (en)1998-04-282001-09-28Sgs Thomson Microelectronics DEVICE AND METHOD FOR READING EEPROM MEMORY CELLS
US5966330A (en)1998-04-301999-10-12Eon Silicon Devices, Inc.Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias
DE69820594D1 (en)1998-05-292004-01-29St Microelectronics Srl Arrangement and method for reading non-volatile memory cells
DE69832164T2 (en)1998-08-072006-08-17Stmicroelectronics S.R.L., Agrate Brianza Readout arrangement for multi-bit semiconductor memory device
JP3588553B2 (en)1998-08-132004-11-10株式会社東芝 Non-volatile semiconductor memory
EP0987715B1 (en)1998-09-152005-02-09STMicroelectronics S.r.l.Method for maintaining the memory of non-volatile memory cells
US5936906A (en)1998-10-291999-08-10Winbond Electronics Corp.Multilevel sense device for a flash memory
US6282145B1 (en)1999-01-142001-08-28Silicon Storage Technology, Inc.Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6094368A (en)*1999-03-042000-07-25Invox TechnologyAuto-tracking write and read processes for multi-bit-per-cell non-volatile memories
US6103573A (en)1999-06-302000-08-15Sandisk CorporationProcessing techniques for making a dual floating gate EEPROM cell array
US6418054B1 (en)*1999-08-312002-07-09Advanced Micro Devices, Inc.Embedded methodology to program/erase reference cells used in sensing flash cells
US6154392A (en)*1999-10-122000-11-28Patti; RobertFour-terminal EEPROM cell for storing an analog voltage and memory system using the same to store multiple bits per EEPROM cell
US6141261A (en)*1999-12-312000-10-31Patti; RobertDRAM that stores multiple bits per storage cell
WO2001027928A1 (en)*1999-10-122001-04-19Robert PattiMemory that stores multiple bits per storage cell
US6314014B1 (en)*1999-12-162001-11-06Ovonyx, Inc.Programmable resistance memory arrays with reference cells
US6426893B1 (en)*2000-02-172002-07-30Sandisk CorporationFlash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6512263B1 (en)*2000-09-222003-01-28Sandisk CorporationNon-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming

Also Published As

Publication numberPublication date
DE60130012D1 (en)2007-09-27
ATE370498T1 (en)2007-09-15
KR20030043976A (en)2003-06-02
CN1466765A (en)2004-01-07
EP1332500A2 (en)2003-08-06
US6714449B2 (en)2004-03-30
KR100760886B1 (en)2007-09-21
DE60130012T2 (en)2008-03-20
EP1332500B1 (en)2007-08-15
US20040105307A1 (en)2004-06-03
WO2002027729A3 (en)2002-12-12
JP2004510286A (en)2004-04-02
EP1624461B1 (en)2012-07-25
US6538922B1 (en)2003-03-25
EP1624461A3 (en)2006-07-12
EP1624461A2 (en)2006-02-08
CN1273992C (en)2006-09-06
WO2002027729A2 (en)2002-04-04
TW561480B (en)2003-11-11
US6873549B2 (en)2005-03-29
US20030112661A1 (en)2003-06-19

Similar Documents

PublicationPublication DateTitle
AU2001294743A1 (en)Writable tracking cells
EP1239490A3 (en)Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
EP0760516A3 (en)Non-volatile multi-state memory device with memory cell capable of storing multi-state data
US6529405B2 (en)Circuit and method for programming and reading multi-level flash memory
US5539690A (en)Write verify schemes for flash memory with multilevel cells
US6965523B2 (en)Multilevel memory device with memory cells storing non-power of two voltage levels
US6655758B2 (en)Method for storing data in a nonvolatile memory
TW200502970A (en)Memory with a core-based virtual ground and dynamic reference sensing scheme
US20010038553A1 (en)Mixed mode multi-level memory
TW350048B (en)Non-volatile semiconductor memory and the writing method
ATE383648T1 (en) ERROR HANDLING FOR WRITABLE REFERENCE MEMORY CELLS FOR TRACKING UTILITY VOLTAGE DRIFT
EP1670001A3 (en)Method for reading non-volatile memory cells
US6424569B1 (en)User selectable cell programming
MY126674A (en)Programming non-volatile memory devices
ATE416460T1 (en) MRAM ARCHITECTURE WITH ELECTRICALLY ISOLATED READ-WRITE CIRCUITS
EP1387361A3 (en)Semiconductor memory device
EP0913834A4 (en)
EP0851429A2 (en)Data sensing device and method for multibit memory cell
DE59706533D1 (en) Single-electron memory cell array
US6275417B1 (en)Multiple level flash memory
WO2001067462A1 (en)Interlaced multi-level memory
JP3983940B2 (en) Nonvolatile semiconductor memory
US6657895B2 (en)Reading circuit and method for a multilevel non-volatile memory
JP4007457B2 (en) Multi-level memory circuit with regulated read voltage
US7221595B2 (en)Semiconductor device and method of generating sense signal

[8]ページ先頭

©2009-2025 Movatter.jp